742 results about "Single process" patented technology

A process device providing total fluid flow control is provided. The device includes a closure mechanism disposed in a flow conduit. The closure mechanism, which is preferably an iris-type diaphragm, provides a variable internal diameter. The device includes a differential pressure sensor for sensing the differential pressure on opposite sides of the diaphragm. A controller receives an indication of differential pressure and generates a control signal to an actuator that actuates the closure mechanism. The closure mechanism, differential pressure sensor and controller create a closed-loop flow controller in a single process device.

A global optimization framework for optical character recognition (OCR) of low-resolution photographed documents that combines a binarization-type process, segmentation, and recognition into a single process. The framework includes a machine learning approach trained on a large amount of data. A convolutional neural network can be employed to compute a classification function at multiple positions and take grey-level input which eliminates binarization. The framework utilizes preprocessing, layout analysis, character recognition, and word recognition to output high recognition rates. The framework also employs dynamic programming and language models to arrive at the desired output.

A semiconductor structure (and method for forming) having transistors having both metal gates and polysilicon gates on a single substrate in a single process is disclosed. The method forms a gate dielectric layer on the substrate and forms the metal seed layer on the gate oxide layer. The method patterns the metal seed layer to leave metal seed material in metal gate seed areas above the substrate. Next, the method patterns a polysilicon layer into polysilicon structures above the substrate. Some of the polysilicon structures comprise sacrificial polysilicon structures on the metal gate seed areas and the remaining ones of the polysilicon structures comprise the polysilicon gates. The patterning of the polysilicon gates forms the sacrificial gates above all the metal gate seed areas. Following that, the invention forms sidewall spacers, and source and drain regions adjacent the polysilicon structures. Then, the invention protects the polysilicon gates, removes the sacrificial polysilicon structures, and plates the metal gate seed areas to form the metal gates. The sidewall spacers self-align the metal gates. The plating process forms the metal gates of pure metal. All thermal processing that raises the temperature above a damage threshold for the metal is performed before the plating process.