742 results about "Single process" patented technology

A process device providing total fluid flow control is provided. The device includes a closure mechanism disposed in a flow conduit. The closure mechanism, which is preferably an iris-type diaphragm, provides a variable internal diameter. The device includes a differential pressure sensor for sensing the differential pressure on opposite sides of the diaphragm. A controller receives an indication of differential pressure and generates a control signal to an actuator that actuates the closure mechanism. The closure mechanism, differential pressure sensor and controller create a closed-loop flow controller in a single process device.

The present invention describes the use of two semiconductor layers, a thin film (TF) layer and a bulk Si wafer layer, to make high density and high speed merged logic and memory IC chips. The memory cells use three-dimensional (3D) SRAM structures. Two kinds of 3D logic cells are disclosed. 3D form of the differential cascode voltage switch (DCVS) architecture, and a 3D form of the DCVS with pass gate (DCVSPG) logic architecture. A high density "system on chip" architecture is described. The high density is achieved by locating large PMOS transistors in the TF Si layer, and the fast NMOS transistors in a bulk Si wafer layer. A single process sequence to simultaneously make the logic and memory circuits on the IC chip is also described.

A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.

A DC power-generation array system (30) is made up of an array (32) of power-generation cells (36) arranged as N strings (38) of M cells (36) each. The system (30) incorporates an integral control apparatus (34) having N string units (52) and a single process unit (54). Each string unit (52) is coupled to one of the strings (38), and is made up of monitor module (72) to measure a string current (IS(X)) through that string (38), and a switching module (74) to switch that string (38) into and out of the array (32). The process unit (54) is made up of a processor (90) to evaluate the string currents (IS(X), and a data I / O module (98) to provide a remote monitoring and control of the system (30). The system (30) also has an interface unit (92) to provide local monitoring and control of the system (30). The processor (90) causes the switching modules (74) to couple or decouple strings (38) from array (32) under automatic, remote, and / or local control.

A digital image system and method for combining bad pixel correction and demosaicing in a single process is provided by interpolating sensor values for pixels immediately spatially adjacent to the current pixel being examined to detect defective pixels, and using the interpolated values for demosaicing. If the sensor value of the current pixel being examined is outside of a range of sensor values determined from the interpolated values by more than a configurable threshold amount, the current pixel is considered defective, and replaced using an estimated value from the neighboring pixels. The interpolated values calculated for use in detecting bad pixels can further be used as the interpolated values for demosaicing purposes

The invention provides atomic layer deposition equipment. The atomic layer deposition equipment comprises a reaction chamber which comprises a plurality of sub chambers and a drive unit, wherein a plurality of process positions are arranged on the same horizontal plane in the reaction chamber, the plurality of process positions are arranged at intervals along the peripheral direction of the reaction chamber, and are uniformly arranged in sequence according to the sequence of processes, the quantity and positions of the sub chambers are in one-to-one correspondence with those of the process positions, and each sub chamber is used for completing one process of single processes for a substrate in each sub chamber; the drive unit is used for enabling each substrate to complete the corresponding process in the sub chamber placed on the position of each process according to the sequence of the process. The automatic layer deposition equipment provided by the invention can be used for processing a plurality of substrates at the same time by a single process, so that the process efficiency is improved, and thus, the yield is increased.

An integrated unit controller / human-machine interface is disclosed which incorporates high-speed redundant control, sequence of events, supervisory control and data acquisition, alarm handling, trending & historian, process graphics and "open" communications in a compact form factor enclosure (the front panel less than 5x6 inches). The unit controller is composed of two primary hardware elements: the controller module (single or redundant) and the palm type computers (P / PC)-based human-machine interface (HMI) with touch screen. The controller covers a wide span of applications, from single process unit control to networked multi-unit management.

A hardware-implemented method to support three desirable software properties: encapsulation, referential integrity / capabilities, and transactions. These properties in turn may be used to support software correctness, specifically the enforcement of invariants, and computer security, specifically protecting parts of programs from each other within a single process.

A method of controllably aligning carbon nanotubes to a template structure to fabricate a variety of carbon nanotube containing structures and devices having desired characteristics is provided. The method allows simultaneous, selective growth of both vertically and horizontally controllably aligned nanotubes on the template structure but not on a substrate in a single process step.

A method of forming a plurality of multi-layer organic films in a single process includes preparing a first evaporating source that evaporates a first evaporating source material onto a first deposition region and a second evaporating source that evaporates a second evaporating source material onto a second deposition region, wherein the first evaporating source material and the second evaporating source material are different from each other, adjusting the first evaporating source and the second evaporating source in order to obtain a first overlapping region in which the first deposition region and the second deposition region overlap each other, driving the first evaporating source and the second evaporating source to deposit the first evaporating source material and the second evaporating source material onto a portion of an object to be processed, and moving the first evaporating source and the second evaporating source from a first end of the object to a second end of the object to form a multilayer film comprising a first layer that is a deposition of only the first evaporating source material, a second layer that is a deposition of a mixture of the first evaporating source material and the second evaporating source material and a third layer that is a deposition of only the second source material.

The present invention describes the use of two semiconductor layers, a thin film (TF) layer and a bulk Si wafer layer, to make high density and high speed merged logic and memory IC chips. The memory cells use three-dimensional (3D) SRAM structures. Two kinds of 3D logic cells are disclosed. 3D form of the differential cascode voltage switch (DCVS) architecture, and a 3D form of the DCVS with pass gate (DCVSPG) logic architecture. A high density "system on chip" architecture is described. The high density is achieved by locating large PMOS transistors in the TF Si layer, and the fast NMOS transistors in a bulk Si wafer layer. A single process sequence to simultaneously make the logic and memory circuits on the IC chip is also described.

Bone marrow aspiration devices and methods are disclosed for use in preparing a substrate. In general, the device includes an elongate penetrating element, a chamber adapted to retain a substrate, and a fluid extraction mechanism that is effective to pull fluid through the elongate penetrating element, into the chamber, and through the substrate. The device is particularly advantageous in that it will allow for the removal of fluids from a patient's body and the preparation of a substrate in a single process, thereby providing a more efficient method and device for preparing a substrate.

Methods and systems for permitting thickness control of the selective epitaxial growth (SEG) layer in a semiconductor manufacturing process, for example raised source / drain applications in CMOS technologies, are presented. These methods and systems provide the capability to measure the thickness of an SEG film in-situ utilizing optical ellipsometry equipment during or after SEG layer growth, prior to removing the wafer from the SEG growth tool. Optical ellipsometry equipment can be integrated into the SEG platform and control software, thus providing automated process control (APC) capability for SEG thickness. The integration of the ellipsometry equipment may be varied, dependent upon the needs of the fabrication facility, e.g., integration to provide ellipsometer monitoring of a single process tool, or multiple tool monitoring, among other configurations.

A fluid heat exchanger unit cools an electronic device with a cooling fluid supplied to an upper portion of a cooling housing. A refrigerant is disposed in a lower portion of the cooling housing for liquid-to-vapor transformation. A partition divides the upper portion of the cooling housing from the lower portion. A heat rejecter is disposed on and above the upper wall of the cooling housing with a first header extending from and in fluid communication with the liquid coolant outlet. A second header extends upwardly from a rejecter outlet. A plurality of first tubes extend between and in fluid communication with the first header and the second header with a plurality of first air fins disposed between the upper wall and the first tubes. A single unit defines both the cooling housing and the air cooled heat rejecter to thereby allow the manufacture of the unit in a single process with the attendant reduction in shipping, handling and installation.

A built in beat diffusion lamp body for LED lamp was invented. The purpose of the invention is to solve the difficulties of poor heat conduction and diffusion caused by the small heat diffusion surface of the material of a conventional LED lamp. The lamp body is made of a set of heat diffusion vanes encircling the heat diffusion complex. The vanes and heat diffusion complex are made from Aluminum alloy in a single process of extrusion moulding. The transverse section of the heat diffusion body is volute shaped. The bottom of the heat diffusion complex is fixed to an aluminum board or an aluminum circuit: board by interference fit. The heat generated by the LED elements can be absorbed and diffused by the board, the heat diffusion complex and the surrounding diffusion element. The outward appearance of the heat diffusion lamp body may be shaped into cup, ladder, or cylinder likeness to satisfy the application requirement. The advantages of current invention are: efficient heat absorption, conduction, and diffusion, low cost for manufacturing, and aesthetic appearance.

A single chip wireless sensor (1) comprises a microcontroller (2) connected by a transmit / receive interface (3) to a wireless antenna (4). The microcontroller (2) is also connected to an 8 kB RAM (5), a USB interface (6), an RS232 interface (8), 64kB flash memory (9), and a 32 kHz crystal (10). The device (1) senses humidity and temperature, and a humidity sensor (11) is connected by an 18 bit ΣΔ A-to-D converter (12) to the microcontroller (2) and a temperature sensor (13) is connected by a 12 bit SAR A-to-D converter (14) to the microcontroller (2). The device (1) is an integrated chip manufactured in a single process in which both the electronics and sensor components are manufactured using standard CMOS processing techniques, applied to achieve both electronic and sensing components in an integrated process.

Bone marrow aspiration devices and methods are disclosed for use in preparing a substrate. In general, the device includes an elongate penetrating element, a chamber adapted to retain a substrate, and a fluid extraction mechanism that is effective to pull fluid through the elongate penetrating element, into the chamber, and through the substrate. The device is particularly advantageous in that it will allow for the removal of fluids from a patient's body and the preparation of a substrate in a single process, thereby providing a more efficient method and device for preparing a substrate.

A semiconductor structure (and method for forming) having transistors having both metal gates and polysilicon gates on a single substrate in a single process is disclosed. The method forms a gate dielectric layer on the substrate and forms the metal seed layer on the gate oxide layer. The method patterns the metal seed layer to leave metal seed material in metal gate seed areas above the substrate. Next, the method patterns a polysilicon layer into polysilicon structures above the substrate. Some of the polysilicon structures comprise sacrificial polysilicon structures on the metal gate seed areas and the remaining ones of the polysilicon structures comprise the polysilicon gates. The patterning of the polysilicon gates forms the sacrificial gates above all the metal gate seed areas. Following that, the invention forms sidewall spacers, and source and drain regions adjacent the polysilicon structures. Then, the invention protects the polysilicon gates, removes the sacrificial polysilicon structures, and plates the metal gate seed areas to form the metal gates. The sidewall spacers self-align the metal gates. The plating process forms the metal gates of pure metal. All thermal processing that raises the temperature above a damage threshold for the metal is performed before the plating process.

Methods and systems are described for applying the use of shards within a single memory address space. A database request is processed by providing the request from a client to a processor, the processor then distributing the request to multiple threads within a single process but executing in a shared memory address environment, wherein each thread performs the request on a distinct shard, and aggregating the results of the multiple threads being aggregated and returning a final result to the client. By parallelizing operations in this way, the request response time can be reduced and the total amount of communication overhead can be reduced.

Multiple metallization layers in a partially fabricated integrated circuit are formed in a single process step. As a place-holder for the later-deposited metallization layers, sacrificial material is deposited in the integrated circuit at desired locations at various fabrication levels over a substrate. The sacrificial material is then removed to form a contiguous open volume spanning multiple fabrication levels. A conductor is then deposited in the open volume to form multiple metallization layers in a single step.

A new approach is proposed that contemplates systems and methods to provide harmonious tiling layout for a single heterogeneous data feed with a unique and brief syntax. The approach provides solutions to fit shapes into a container without having any holes by automatically providing the most optimum harmonious layout and tile presentation “win-out” over time, and a survival of the fittest of visual presentation based on configurable metrics. A single user interface combines the action of searching and publishing as a single process whereby search results are formatted with the intention to facilitate publishing the chosen items.

A single chip wireless sensor (1) comprises a microcontroller (2) connected to a transmit / receive interface (3), which is coupled to a wireless antenna (4) by an L-C matching circuit. The sensor (1) senses gas or humidity and temperature. The device (1) is an integrated chip manufactured in a single process in which both the electronics and sensor components are manufactured using standard CMOS processing techniques, applied to achieve both electronic and sensing components in an integrated process. A Low-K material (57) with an organic polymer component is spun onto the wafer to form a top layer incorporating also sensing electrodes (60). This material is cured at 300° C., which is much lower than CVD temperatures. The polyimide when cured becomes thermoset, and the lower mass-to-volume ratio resulting in K, its dielectric constant, reducing to 2.9. The thermoset dielectric, while not regarded as porous in the conventional sense, has sufficient free space volume to admit enough gas or humidity for sensing.

Described is a system and method whereby processes may have multiple memory maps associated therewith to provide curtained memory and overcome other memory-related problems. Multiple maps are used to restrict memory access of existing code such as drivers, without changing that code, and without changing existing microprocessors. A thread of a process is associated with one memory map at a time, which by mapping to different memory locations, provides memory isolation without requiring a process switch. Memory isolation may be combined with controlled, closed memory map switching performed only by trusted code, to ensure that some protected memory is inaccessible to all but the trusted code (curtained memory). Map switching among multiple maps eliminates the need to change a process in order to access different memory, thereby allowing expanded memory addressing in a single process and isolating untrusted code run in process from certain memory of that process.

A method and apparatus for providing peer ownership of shared objects. In the invention, shared objects are implemented as a shell object with shared object state stored in shared memory. Each process that shares the object is granted a shell object within their process space which points to the object state in shared memory. All processes share equal access to the shared object, with no single process determining the lifetime of the shared object. The shutdown of any single process results in the termination of that process's respective shell object, without the necessary termination of the shared object state in shared memory. There is therefore no shutdown problem. Further, performance is enhanced because all processes access the shared object state in shared memory in what is essentially an in-process call. In an embodiment of the invention, a peer ownership manager acts as the object server for all shared objects whose object state resides in shared memory. A global table is maintained within the peer ownership manager which contains the shared memory offset location of each object's state referenced by the GID (global identifier number) of the object. Also, for each process, a shell table is maintained in which existing shell objects for a given process are referenced by the offset value for the object's state in shared memory. Methods are provided for supporting object webs in shared memory, and for putting dynamically sized data and standard non-peer objects into shared objects in shared memory.

A digital image system and method for combining bad pixel correction and demosaicing in a single process is provided by interpolating sensor values for pixels immediately spatially adjacent to the current pixel being examined to detect defective pixels, and using the interpolated values for demosaicing. If the sensor value of the current pixel being examined is outside of a range of sensor values determined from the interpolated values by more than a configurable threshold amount, the current pixel is considered defective, and replaced using an estimated value from the neighboring pixels. The interpolated values calculated for use in detecting bad pixels can further be used as the interpolated values for demosaicing purposes

A single process for forming a finished component is described herewith. The process includes providing a core having two outer layers on each side of the core. A water activated resin system is provided that includes a resin and applicator for applying resin to the outer layers at the core. A film layer used for creating a final finished product is placed over the core and resin layers. The layers are pressed to form the finished product.

Image data processing techniques utilizing multiple processes operating on one or more processors of one or more computer systems can be used to efficiently rearrange or reparameterizing image data to form hologram element (hogel) images which can then be used to produce holographic stereograms. These techniques utilize matrix manipulation of portions of image data both within a single process, and across multiple processes typically executing on different processors, and each utilizing a subset of the overall set of image data.

A process device providing total fluid flow control is provided. The device includes a closure mechanism disposed in a flow conduit. The closure mechanism, which is preferably an iris-type diaphragm, provides a variable internal diameter. The device includes a differential pressure sensor for sensing the differential pressure on opposite sides of the diaphragm. A controller receives an indication of differential pressure and generates a control signal to an actuator that actuates the closure mechanism. The closure mechanism, differential pressure sensor and controller create a closed-loop flow controller in a single process device.