The invention discloses an MEMS device architecture, which comprises a cap layer, a device layer and a substrate layer, the cap layer is bonded with the device layer, the bonded whole is bonded with the substrate layer, the cap layer is manufactured based on a first
silicon substrate, the bottom of the cap layer is provided with a cavity structure, and the cap layer is internally provided with a high-deep groove structure. A
silicon dioxide film is arranged on the groove wall of the high-deep groove structure,
polycrystalline silicon is deposited and filled in the high-deep groove structure, and a
silicon dioxide layer is arranged on the upper surface of the first silicon substrate; the device layer is manufactured based on an SOI
wafer and comprises a first silicon structure layer composed of top layer silicon, a
buried oxide layer and a second silicon structure layer composed of back substrate silicon. The substrate layer comprises a second silicon substrate, a bottom layer cavity is formed in the top face of the second silicon substrate, and exhaust holes are formed in the bottom face of the second silicon substrate. According to the method, deep groove
etching,
polycrystalline silicon groove filling and bonding technologies are combined,
advanced materials such as the SOI
wafer and the
polyimide layer are utilized, and excellent
signal isolation and flexibility of various
MEMS IMU applications are achieved.