59results about "Current responsive resistors" patented technology

A plurality of resistors are disclosed herein. The resistor may include one or more resistive elements and a plurality of conductive portions. Openings or slots, which can be configured to adjust temperature coefficient or resistance (TCR) values of the resistor, are formed in the resistive elements. The shape, quantity, and orientation of the openings or slots can vary. In one aspect, header assemblies are provided for securing or holding pins relative to the resistors.

The invention discloses a power type negative temperature coefficient thermistor and method for suppressing surge current, and relates to the technical field of negative temperature coefficient thermistors, the thermistor comprises a core body and pins, the pins are respectively arranged on electrodes on two sides of the core body by adopting a multi-contact-surface structure, and the pins are arranged on the two sides of the core body. The core body is made of a Mn-Co-Ni-La oxide with a nano composite gradient structure; the Mn-Co-Ni-La oxide with the nano-composite gradient structure determines the upper limits of core capabilities such as surge suppression, wide temperature stability and low power consumption of the thermistor, and the redesign of the pin is the key of performance transfer, so that the electrical properties (low contact resistance and high surge tolerance) of the Mn-Co-Ni-La oxide with the nano-composite gradient structure are not counteracted by structural defects; the arrangement of the bracket prevents the Mn-Co-Ni-La oxide with the nano-composite gradient structure from losing the effect due to heat accumulation and physical damage through thermal management and mechanical protection, and the three components supplement one another and cooperate with one another, so that the performance of the thermistor of the Mn-Co-Ni-La oxide with the nano-composite gradient structure is guaranteed.

An apparatus for sensing current in a back-to-back MOSFET configuration is provided. The apparatus may include a first MOSFET having a gate terminal, a drain terminal, and a source terminal, a second MOSFET having a source terminal coupled to the source terminal of the first MOSFET, a gate terminal, and a drain terminal, a gate driver circuit including at least one gate drive output terminal to output a gate drive signal to the gate terminals of the first and second MOSFETs, and a return terminal coupled to the source terminals of the first and second MOSFETs, a shunt resistor coupled between the source terminals of the first and second MOSFETs, and a first MOSFET return resistor coupled between the source terminal of the first MOSFET and the return terminal of the gate driver circuit. The first MOSFET return resistor resistance may be greater than a resistance of the shunt resistor.

An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a first polymer and a conductive filler. The first polymer consists of polyvinylidene difluoride (PVDF), and PVDF exists in different phases such as α-PVDF, β-PVDF and γ-PVDF. The total amount of α-PVDF, β-PVDF and γ-PVDF is calculated as 100%, and the amount of γ-PVDF accounts for 33% to 42%.

To prevent solder wetting on a resistor formed of a high specific resistance material, that can be used in the applications for large current detection.SOLUTION: A multilayer resistor includes a resistor having a plate shape and including a first flat surface and a second flat surface in a thickness direction, and a first electrode formed on the first flat surface and a second electrode formed on the second flat surface. The resistor includes a metal body formed of an electroconductive metal material, and an insulating particle formed of an insulating material. The insulating particle includes a first insulating particle with a particle diameter of 5 μm or more. At the implementation on a printed board, an end surface of the resistor is exposed and the second electrode is connected through the solder.SELECTED DRAWING: Figure 1

An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a first polymer and a conductive filler. The first polymer consists of polyvinylidene difluoride (PVDF), and PVDF exists in different phases such as α-PVDF, β-PVDF and γ-PVDF. The total amount of α-PVDF, β-PVDF and γ-PVDF is calculated as 100%, and the amount of α-PVDF accounts for 48% to 55%. The conductive filler has a metal-ceramic compound.

Thermosensitive material for an overheat detection element, detection element, associated electrical equipment and electrical cabinet. This thermosensitive material is a hot injectable and electrically insulating material, the thermosensitive material including a polymer matrix, made of a thermoplastic polymer material or thermoplastic elastomer, a plasticizer, having a molar mass (M), and a charge in the form of particles, in particular carbon black.The molar mass (M) of the plasticizer is chosen based on a predetermined first temperature threshold (Ti), so that the heat-sensitive material is configured to release volatile species from the heated plasticizer and charge particles carried by the plasticizer when the material is subjected to a temperature above the first temperature threshold (Ti). These volatile species from the plasticizer and charge particles are detectable by a detection device. See Figure 3 for the abbreviation.

The invention relates to a resistor assembly (2) comprising at least one connecting element (3, 3 ') and at least one resistor element (4). A coating (5) is applied as a substrate to at least a portion (411) of the surface (41) of the resistor element (4) or as a substrate to at least a portion (311) of the surface (31) of the connecting element (3, 3 '), said coating having at least one layer (50, 51, 52, 53). According to the invention, the coating (5) is designed such that the metal and the semiconductor are in direct contact at a boundary surface (61) between the substrate and the coating (5), such that a p-n transition is formed at the boundary surface (61), and / or the metal and the semiconductor or the first semiconductor and the second semiconductor are in direct contact at least at a boundary surface (62) between the first layer (50, 51) and the second layer (52) of the coating (5), such that a p-n transition is formed at the boundary surface (61). This is such that a p-n transition is formed at the boundary surface (62). The layer (50, 51, 52, 53) of the coating (5) may be in contact with an uncoated portion (412, 412 ') of the surface (41) of the resistor element (4) or an uncoated portion (312) of the surface (31) of the connection element (3, 3'), or both the first layer (50, 51) and the other layer (52, 53) of the coating (5), in order to detect a measurement signal for determining the temperature of the resistor assembly (2).

The present invention provides resistors having various arrangements of conductive parts and resistive elements, current sensing resistors, battery shunt resistors, and shunt resistors. [Solution] The resistor 610 has one or more resistive elements 611 and a plurality of conductive parts 612, 614. Openings or slots 672, 676 are formed within the resistive elements in a configuration that allows adjustment of the resistor's TCR (temperature coefficient of resistance). The shape, number, and orientation of the openings or slots are variable. In one embodiment, a header member is provided to fix or hold pins to the resistor.

The present invention relates to a semiconductor-type wind speed sensor comprising: a substrate which includes a through-hole having an inclined side surface; a pair of electrodes which are formed on the substrate; and a metal wire which electrically connects the pair of electrodes to each other, wherein the through-hole is formed between the pair of electrodes.

The present invention provides a resistance alloy for a shunt resistor, an application of the resistance alloy to the shunt resistor, and a shunt resistor using the resistance alloy. In a resistor for current detection such as a shunt resistor, a low TCR can be maintained, a low resistivity can be achieved, and a small thermoelectric potential to copper can be achieved. The resistance alloy is used for a shunt resistor for current detection, and the manganese in the resistance alloy is 4.5 to 5.5% by mass, the silicon is 0.05 to 0.30% by mass, the iron is 0.10 to 0.30% by mass, and the remainder is composed of copper, and the resistivity is 15 to 25 μΩ·cm.

To provide a method of easily, accurately and efficiently adjusting a temperature coefficient of resistance of a current sense resistor and a shunt resistor, and the resistors.SOLUTION: A resistor 10 has one or more resistive elements 11, 13 and a plurality of conductive portions 12, 14, 16. Openings or slots 72 allowing adjustment of temperature coefficient of resistance (TCR) values of the resistor are formed adjacently to a second side, namely an inner side 20, of the first conductive portion 12. The shape, quantity and orientation of the openings or slots can vary. In one aspect, header members 80a, 80b are provided for securing or holding pins 84 relative to the resistor.SELECTED DRAWING: Figure 1

To provide a lamination type resister which achieves stabilization of a resistance characteristic.SOLUTION: A lamination type resister comprises: a resister constructed by a resistance material; and two electrodes nipping the resister. In the resister which is formed in a thin shape for detecting a high-frequency current and is formed by reducing a self-inductance value, the resistance material for detecting the current is constructed by: a metal body made of a metal material such as nichrome having a conductivity; and an insulation particle made of an insulation material such as alumina. A resister formed by mixing the metal body and the insulation particle is exposed to an end surface of the lamination type resister, and contains: a particle having an insulation property; and a three-dimensional net type metal body surrounding the particle. A rate of the metal body against the resistance material is 30 vol% or more and 80 vol% or less.SELECTED DRAWING: Figure 5

The application discloses a multifunctional resistor and a multi-current detection device with the same. The resistor comprises a trunk resistor substrate and a plurality of branch resistor substrates, all of which are welded at intervals on the circumferential side of the trunk resistor substrate; each branch resistor substrate comprises two resistor elements and a first insulating plate embedded between the two resistor elements; on each branch resistor substrate, the two resistor elements are symmetrically welded on the two sides of the first insulating plate, the first ends of the two resistor elements and the first end of the first insulating plate are all welded with the trunk resistor substrate, and the two resistor elements are isolated from each other through the corresponding first insulating plate; and the two resistor elements are electrically connected with the trunk resistor substrate. The application realizes the multifunctional multi-resistor function through integrated design; the two resistor elements in each branch resistor substrate are isolated from each other through the corresponding first insulating plate, thereby effectively reducing the temperature drift effect and being capable of being used for large-current and multi-current detection applications.

An over-current protection device includes an electrode layer and a heat-sensitive layer. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic, and is laminated between a top metal layer and a bottom metal layer of the electrode layer. The heat-sensitive layer includes a polymer matrix and a conductive filler. The polymer matrix includes a first fluoropolymer and a second fluoropolymer. The weight average molecular weight of the second fluoropolymer ranges from 630000 g / mol to 1100000 g / mol. The conductive filler is dispersed in the polymer matrix, thereby forming an electrically conductive path in the heat-sensitive layer.

The invention discloses a multifunctional resistor and a multi-current detection device with the same. The resistor comprises a main resistor substrate and a plurality of branch resistor substrates, and all the branch resistor substrates are welded to the peripheral side of the main resistor substrate at intervals; each branch resistor substrate comprises two resistor elements and a first insulating plate embedded between the two resistor elements; on each branch resistor substrate, two resistor elements are symmetrically welded on the two sides of a first insulating plate, the first ends of the two resistor elements and the first end of the first insulating plate are welded with the main resistor substrate, and the two resistor elements are isolated from each other through the corresponding first insulating plate; the two resistor elements are electrically connected with the main resistor substrate. According to the invention, the multi-resistor function is realized through the integrated design; and the two resistor elements in each branch resistor substrate are isolated from each other through the corresponding first insulating plate, so that the temperature drift effect is effectively reduced, and the high-current multi-current detection circuit can be applied to high-current and multi-current detection.

The invention relates to a resistor assembly (2) comprising at least one connection element (3, 3') and at least one resistor element (4). A coating (5) is applied onto at least one part (411) of the surface (41) of the resistor element (4) as a substrate or onto at least one part (311) of the surface (31) of the connection element (3, 3') as a substrate, said coating having at least one layer (50, 51, 52, 53). According to the invention, the coating (5) is designed such that a metal and a semiconductor are in direct contact at a boundary surface (61) between the substrate and the coating (5) such that a p-n transition is formed at the boundary surface (61), and / or a metal and a semiconductor or a first semiconductor and a second semiconductor are in direct contact at least at a boundary surface (62) between a first layer (50, 51) and a second layer (52) of the coating (5) such that a p-n transition is formed at the boundary surface (62). A layer (50, 51, 52, 53) of the coating (5) and an uncoated part (412, 412') of the surface (41) of the resistor element (4) or an uncoated part (312) of the surface (31) of the connection element (3, 3') or both the first layer (50, 51) as well as another layer (52, 53) of the coating (5) can be contacted in order to detect measurement signals for determining the temperature of the resistor assembly (2).

The present application provides a circuit protection device, comprising: a patch type thermistor element including a first electrode and a second electrode; a first heat dissipation terminal connected with the first electrode; a second heat dissipation terminal connected with the second electrode; and a housing protecting the thermistor element, the first heat dissipation terminal and the second heat dissipation terminal. The circuit protection device according to the present application having an SMD (Surface Mount Device) structure can be applied to an ultra-thin wall-mounted television.

An over-current protection element comprises an electrode layer and a thermistor layer. The thermistor layer has a positive temperature coefficient characteristic and is stacked between the upper metal layer and the lower metal layer in the electrode layer. In addition, the thermistor layer contains a high-molecular polymer base material and a conductive filler. The high-molecular polymer base material comprises a first fluorine-containing polymer and a second fluorine-containing polymer. And the weight-average molecular weight of the second fluorine-containing polymer is between 630000 g / mol and 1100000 g / mol. And the conductive filler is dispersed in the high-molecular polymer base material and is used for forming a conductive channel of the thermistor layer.

A plurality of resistors are disclosed herein. The resistor may include one or more resistive elements and a plurality of conductive portions. Openings or slots, which can be configured to adjust temperature coefficient or resistance (TCR) values of the resistor, are formed in the resistive elements. The shape, quantity, and orientation of the openings or slots can vary. In one aspect, header assemblies are provided for securing or holding pins relative to the resistors.

Heat-sensitive material for an overheating detection element, detection element, associated electrical equipment and electrical cabinet This heat-sensitive material is a hot-injectable and electrically insulating material, the heat-sensitive material including a polymer matrix, made of a thermoplastic polymer material or thermoplastic elastomer, a plasticizer, having a molar mass (M), and a filler in the form of particles, in particular carbon black.The molar mass (M) of the plasticizer is chosen according to a first predetermined temperature threshold (Ti), so that the heat-sensitive material is configured to release volatile species from the heated plasticizer and filler particles entrained by the plasticizer when the heat-sensitive material is subjected to a temperature above the first temperature threshold (Ti), said volatile species from the plasticizer and filler particles being detectable by a detection device. Figure for abstract: figure 3.

An apparatus for sensing a current in a back-to-back MOSFET configuration is provided. The apparatus may include: a first MOSFET having a gate terminal, a drain terminal, and a source terminal; a second MOSFET having a source terminal, a gate terminal, and a drain terminal, the source terminal coupled to the source terminal of the first MOSFET; a gate driver circuit including at least one gate driving output terminal for outputting a gate driving signal to a gate terminal of the first MOSFET and a gate terminal of the second MOSFET, and a return terminal coupled to a source terminal of the first MOSFET and a source terminal of the second MOSFET; a shunt resistor coupled between a source terminal of the first MOSFET and a source terminal of the second MOSFET; and a first MOSFET return resistor coupled between a source terminal of the first MOSFET and a return terminal of the gate driver circuit. A resistance of the first MOSFET return resistor may be greater than a resistance of the shunt resistor.

An over-current protection device includes an electrode layer and a heat-sensitive layer. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic, and is laminated between a top metal layer and a bottom metal layer of the electrode layer. The heat-sensitive layer includes a polymer matrix and a conductive filler. The polymer matrix includes a first fluoropolymer and a second fluoropolymer. The first fluoropolymer includes a first melting point, and the second fluoropolymer has a second melting point lower than the first melting point. The difference between the first melting point and the second melting point is smaller than 14° C. The second fluoropolymer has a second melt flow index ranging from 0.4 g / 10 min to 0.7 g / 10 min.

An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a polymer matrix and a first conductive filler. The polymer matrix includes a polyolefin-based polymer and a fluoropolymer. The fluoropolymer has a melt flow index higher than 1.9 g / 10 min, and the polyolefin-based polymer and the fluoropolymer together form an interpenetrating polymer network (IPN). The first conductive filler has a metal-ceramic compound dispersed in the polymer matrix.

The present application relates to the technical field of electronic components, and in particular to an overcurrent protection component, which overcomes the problems of poor conductivity, slow response and poor self-protection when used by welding of the prior art. The component has a core material, which comprises a top surface, a bottom surface opposite to the top surface, two side surfaces between the top surface and the bottom surface, and two end surfaces; a first conductive layer is formed on the top surface of the core material, and a second conductive layer is formed on the bottom surface of the core material; an encapsulation layer encapsulates the first conductive layer and the second conductive layer, and encapsulates at least one of the side surfaces; a first end electrode is electrically connected to the first conductive layer, and a second end electrode is electrically connected to the second conductive layer.

An over-current protection device includes an electrode layer and a heat-sensitive layer. The heat-sensitive layer includes a polymer matrix and a conductive filler. The polymer matrix includes a polyolefin-based polymer and an olefin-acrylate copolymer. The polyolefin-based polymer is represented by a formula (I): wherein R1 and R2 are selected from the group consisting of CH3, C2H5, and C3H7. The olefin-acrylate copolymer is represented by a formula (II): wherein R is selected from the group consisting of COOCH3, COOC2H5, and COOC4H9.

The present invention discloses a polymer-based conductive composite material and an overcurrent protection element prepared therefrom. The polymer-based conductive composite material comprises a polymer substrate and a conductive filler of a graphene-like two-dimensional layered structure dispersed in the polymer substrate, the polymer substrate accounts for 20%-75% of the volume fraction of the polymer-based conductive composite material, and the conductive filler accounts for 25%-80% of the volume fraction of the polymer-based conductive composite material. The conductive filler has outstanding weather resistance, good processing performance, and excellent conductivity. The overcurrent protection element prepared by the polymer-based conductive composite material comprises at least two metal electrode foils, and the polymer-based conductive composite material is tightly combined with the metal electrode foils. The overcurrent protection element prepared by the polymer-based conductive composite material has low room temperature resistivity, outstanding weather resistance and good processability.

A surface-adhesive overcurrent protection element includes at least one PTC material layer, a first conductive layer, a second conductive layer, a first electrode, a second electrode, at least one insulating layer, and a capping layer. The PTC material layer comprises a crystalline polymer and conductive fillers dispersed within the crystalline polymer. The first and second conductive layers are respectively disposed on the first and second surfaces of the PTC material layer. The first and second electrodes are electrically connected to the first and second conductive layers, respectively. An insulating layer is disposed between the first and second electrodes for electrical isolation. The capping layer comprises a fluorinated polymer material and covers the entire outer surface of the surface-adhesive overcurrent protection element.

A novel polymer positive temperature coefficient (PPTC) material, device, and method of fabrication. The PPTC device may include a PPTC body; a first electrode disposed on a first surface of the PPTC body and a second electrode disposed on a second surface of the PPTC body, opposite the first electrode. The PPTC body may include a polymer matrix; and a conductive filler, disposed in the polymer matrix. The conductive filler may include a tungsten carbide component comprising at least 30 volume percent of the PPTC body; and a carbon component, wherein a total volume fraction of the conductive filler comprises between forty volume percent and sixty five volume percent of the PPTC body.

A positive temperature coefficient component includes: a substrate (32); a conductive ink (36) disposed over at least a portion of the substrate (32); a positive temperature coefficient layer (38) disposed over at least a portion of the substrate (32) and / or the conductive ink (36); and a topcoat layer (42) formed from a coating composition including a dielectric material disposed over at least a portion of the positive temperature coefficient layer (38) and / or the conductive ink (36).