29results about "Current responsive resistors" patented technology

The invention discloses a power type negative temperature coefficient thermistor and method for suppressing surge current, and relates to the technical field of negative temperature coefficient thermistors, the thermistor comprises a core body and pins, the pins are respectively arranged on electrodes on two sides of the core body by adopting a multi-contact-surface structure, and the pins are arranged on the two sides of the core body. The core body is made of a Mn-Co-Ni-La oxide with a nano composite gradient structure; the Mn-Co-Ni-La oxide with the nano-composite gradient structure determines the upper limits of core capabilities such as surge suppression, wide temperature stability and low power consumption of the thermistor, and the redesign of the pin is the key of performance transfer, so that the electrical properties (low contact resistance and high surge tolerance) of the Mn-Co-Ni-La oxide with the nano-composite gradient structure are not counteracted by structural defects; the arrangement of the bracket prevents the Mn-Co-Ni-La oxide with the nano-composite gradient structure from losing the effect due to heat accumulation and physical damage through thermal management and mechanical protection, and the three components supplement one another and cooperate with one another, so that the performance of the thermistor of the Mn-Co-Ni-La oxide with the nano-composite gradient structure is guaranteed.

Thermosensitive material for an overheat detection element, detection element, associated electrical equipment and electrical cabinet. This thermosensitive material is a hot injectable and electrically insulating material, the thermosensitive material including a polymer matrix, made of a thermoplastic polymer material or thermoplastic elastomer, a plasticizer, having a molar mass (M), and a charge in the form of particles, in particular carbon black.The molar mass (M) of the plasticizer is chosen based on a predetermined first temperature threshold (Ti), so that the heat-sensitive material is configured to release volatile species from the heated plasticizer and charge particles carried by the plasticizer when the material is subjected to a temperature above the first temperature threshold (Ti). These volatile species from the plasticizer and charge particles are detectable by a detection device. See Figure 3 for the abbreviation.

The present invention provides resistors having various arrangements of conductive parts and resistive elements, current sensing resistors, battery shunt resistors, and shunt resistors. [Solution] The resistor 610 has one or more resistive elements 611 and a plurality of conductive parts 612, 614. Openings or slots 672, 676 are formed within the resistive elements in a configuration that allows adjustment of the resistor's TCR (temperature coefficient of resistance). The shape, number, and orientation of the openings or slots are variable. In one embodiment, a header member is provided to fix or hold pins to the resistor.

To provide a method of easily, accurately and efficiently adjusting a temperature coefficient of resistance of a current sense resistor and a shunt resistor, and the resistors.SOLUTION: A resistor 10 has one or more resistive elements 11, 13 and a plurality of conductive portions 12, 14, 16. Openings or slots 72 allowing adjustment of temperature coefficient of resistance (TCR) values of the resistor are formed adjacently to a second side, namely an inner side 20, of the first conductive portion 12. The shape, quantity and orientation of the openings or slots can vary. In one aspect, header members 80a, 80b are provided for securing or holding pins 84 relative to the resistor.SELECTED DRAWING: Figure 1

To provide a lamination type resister which achieves stabilization of a resistance characteristic.SOLUTION: A lamination type resister comprises: a resister constructed by a resistance material; and two electrodes nipping the resister. In the resister which is formed in a thin shape for detecting a high-frequency current and is formed by reducing a self-inductance value, the resistance material for detecting the current is constructed by: a metal body made of a metal material such as nichrome having a conductivity; and an insulation particle made of an insulation material such as alumina. A resister formed by mixing the metal body and the insulation particle is exposed to an end surface of the lamination type resister, and contains: a particle having an insulation property; and a three-dimensional net type metal body surrounding the particle. A rate of the metal body against the resistance material is 30 vol% or more and 80 vol% or less.SELECTED DRAWING: Figure 5

The application discloses a multifunctional resistor and a multi-current detection device with the same. The resistor comprises a trunk resistor substrate and a plurality of branch resistor substrates, all of which are welded at intervals on the circumferential side of the trunk resistor substrate; each branch resistor substrate comprises two resistor elements and a first insulating plate embedded between the two resistor elements; on each branch resistor substrate, the two resistor elements are symmetrically welded on the two sides of the first insulating plate, the first ends of the two resistor elements and the first end of the first insulating plate are all welded with the trunk resistor substrate, and the two resistor elements are isolated from each other through the corresponding first insulating plate; and the two resistor elements are electrically connected with the trunk resistor substrate. The application realizes the multifunctional multi-resistor function through integrated design; the two resistor elements in each branch resistor substrate are isolated from each other through the corresponding first insulating plate, thereby effectively reducing the temperature drift effect and being capable of being used for large-current and multi-current detection applications.

The invention relates to a resistor assembly (2) comprising at least one connection element (3, 3') and at least one resistor element (4). A coating (5) is applied onto at least one part (411) of the surface (41) of the resistor element (4) as a substrate or onto at least one part (311) of the surface (31) of the connection element (3, 3') as a substrate, said coating having at least one layer (50, 51, 52, 53). According to the invention, the coating (5) is designed such that a metal and a semiconductor are in direct contact at a boundary surface (61) between the substrate and the coating (5) such that a p-n transition is formed at the boundary surface (61), and / or a metal and a semiconductor or a first semiconductor and a second semiconductor are in direct contact at least at a boundary surface (62) between a first layer (50, 51) and a second layer (52) of the coating (5) such that a p-n transition is formed at the boundary surface (62). A layer (50, 51, 52, 53) of the coating (5) and an uncoated part (412, 412') of the surface (41) of the resistor element (4) or an uncoated part (312) of the surface (31) of the connection element (3, 3') or both the first layer (50, 51) as well as another layer (52, 53) of the coating (5) can be contacted in order to detect measurement signals for determining the temperature of the resistor assembly (2).

The present application provides a circuit protection device, comprising: a patch type thermistor element including a first electrode and a second electrode; a first heat dissipation terminal connected with the first electrode; a second heat dissipation terminal connected with the second electrode; and a housing protecting the thermistor element, the first heat dissipation terminal and the second heat dissipation terminal. The circuit protection device according to the present application having an SMD (Surface Mount Device) structure can be applied to an ultra-thin wall-mounted television.

An apparatus for sensing a current in a back-to-back MOSFET configuration is provided. The apparatus may include: a first MOSFET having a gate terminal, a drain terminal, and a source terminal; a second MOSFET having a source terminal, a gate terminal, and a drain terminal, the source terminal coupled to the source terminal of the first MOSFET; a gate driver circuit including at least one gate driving output terminal for outputting a gate driving signal to a gate terminal of the first MOSFET and a gate terminal of the second MOSFET, and a return terminal coupled to a source terminal of the first MOSFET and a source terminal of the second MOSFET; a shunt resistor coupled between a source terminal of the first MOSFET and a source terminal of the second MOSFET; and a first MOSFET return resistor coupled between a source terminal of the first MOSFET and a return terminal of the gate driver circuit. A resistance of the first MOSFET return resistor may be greater than a resistance of the shunt resistor.

An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a polymer matrix and a first conductive filler. The polymer matrix includes a polyolefin-based polymer and a fluoropolymer. The fluoropolymer has a melt flow index higher than 1.9 g / 10 min, and the polyolefin-based polymer and the fluoropolymer together form an interpenetrating polymer network (IPN). The first conductive filler has a metal-ceramic compound dispersed in the polymer matrix.

The present application relates to the technical field of electronic components, and in particular to an overcurrent protection component, which overcomes the problems of poor conductivity, slow response and poor self-protection when used by welding of the prior art. The component has a core material, which comprises a top surface, a bottom surface opposite to the top surface, two side surfaces between the top surface and the bottom surface, and two end surfaces; a first conductive layer is formed on the top surface of the core material, and a second conductive layer is formed on the bottom surface of the core material; an encapsulation layer encapsulates the first conductive layer and the second conductive layer, and encapsulates at least one of the side surfaces; a first end electrode is electrically connected to the first conductive layer, and a second end electrode is electrically connected to the second conductive layer.

A surface-adhesive overcurrent protection element includes at least one PTC material layer, a first conductive layer, a second conductive layer, a first electrode, a second electrode, at least one insulating layer, and a capping layer. The PTC material layer comprises a crystalline polymer and conductive fillers dispersed within the crystalline polymer. The first and second conductive layers are respectively disposed on the first and second surfaces of the PTC material layer. The first and second electrodes are electrically connected to the first and second conductive layers, respectively. An insulating layer is disposed between the first and second electrodes for electrical isolation. The capping layer comprises a fluorinated polymer material and covers the entire outer surface of the surface-adhesive overcurrent protection element.

A novel polymer positive temperature coefficient (PPTC) material, device, and method of fabrication. The PPTC device may include a PPTC body; a first electrode disposed on a first surface of the PPTC body and a second electrode disposed on a second surface of the PPTC body, opposite the first electrode. The PPTC body may include a polymer matrix; and a conductive filler, disposed in the polymer matrix. The conductive filler may include a tungsten carbide component comprising at least 30 volume percent of the PPTC body; and a carbon component, wherein a total volume fraction of the conductive filler comprises between forty volume percent and sixty five volume percent of the PPTC body.

The present invention relates to a modular current limiting resistor comprising: a plurality of plate resistors which are stacked on one another, wherein the plurality of plate resistors each comprise a pair of coupling pieces and a conducting line integrally formed with the coupling pieces and having a zigzag shape between the coupling pieces; a pair of support frames which respectively support the stacked plate resistors, on both sides of the stacked direction; a plurality of coupling members which pass through one of the support frames, pass the coupling pieces, and then are inserted into the plate resistors through the other one of the support frames so as to fix the plate resistors; a plurality of conductor rings which are disposed between the plurality of plate resistors while passing through and being inserted into the coupling members, and which electrically connect the conducting line on each of the plate resistors; and at least one unit module comprising a plurality of insulating rings which are disposed between the plurality of plate resistors while passing through and being inserted into the coupling members so as to insulate the plate resistors.

A surface-mounted polymer PTC overcurrent protection element having a small package size, comprising a PTC chip, an insulating layer (30), end electrodes (41, 42), and at least one conductive member (60). A dividing gap is designed on a first conductive electrode (21) to form first and second conductive areas (211, 212); the conductive member (60) is arranged at the edge or at least a corner of the first conductive area (211) side of the PTC chip, is used for conducting the first conductive area (211) and a second conductive electrode (22) on the PTC chip, and is not in contact with the end electrodes (41, 42); the main portion comprised in the dividing gap (70) of the first conductive electrode (21) is parallel to the longitudinal direction of the first end electrode (41) and the second end electrode (42).

The utility model discloses an anti-impact current-limiting resistor, and relates to the field of resistors, the anti-impact current-limiting resistor comprises a shell, a resistor disc, a connecting pressing block and a filling layer, the shell is of a structure with an upper opening and is provided with a first accommodating cavity; the resistor disc is placed in the first accommodating cavity, and the periphery of the resistor disc abuts against the inner wall of the first accommodating cavity; the two connecting pressing blocks are located in the first containing cavity, one ends of the two connecting pressing blocks are electrically connected with the two ends of the resistor disc respectively, and the other ends of the two connecting pressing blocks are exposed out of the opening of the shell; and the filling layer is formed in the first accommodating cavity, is in contact with the surface of the resistor disc and is used for fixing and protecting the resistor disc in the first accommodating cavity. According to the invention, the working stability of the resistor in the application of the circuit breaker can be improved, and the service life is prolonged.

An overcurrent protection device comprises a first PTC (Positive Temperature Coefficient) element, a second PTC element, a first insulating layer and a first conductive through hole, the first PTC element comprises a first PTC body, a first electrode, a second electrode and a third electrode, and the first electrode, the second electrode and the third electrode are arranged on the first PTC body. The second PTC element comprises a second PTC body, a fourth electrode and a fifth electrode, and the fourth electrode and the fifth electrode are arranged on the second PTC body. The first insulating layer is disposed between the first PTC element and the second PTC element. The first conductive through hole is electrically connected with the first PTC element and the second PTC element. Therefore, heat conductivity can be improved, and good electrical property and reliability are achieved.

The present invention relates to a resistor (2) having at least one connection element (3, 3') and at least one resistive element (4), wherein at least a portion (411) of the surface (41) of the resistive element (4) as a substrate or at least a portion (311) of the surface (31) of the connection element (3, 3') as a substrate is coated with a coating (5) having at least one layer (50, 51, 52, 53). According to the present invention, the coating (5) is implemented in such a way that at an interface (61) between the substrate and the coating (5) there is direct metal-semiconductor contact, thereby forming a pn junction at the interface (61), and / or at least at an interface (62) between a first layer (50, 51) and a second layer (52) of the coating (5) there is direct metal-semiconductor contact or a first semiconductor-second semiconductor contact, thereby forming a pn junction at the interface (62). The resistor 2 is configured such that either one layer (50, 51, 52, 53) of the coating (5) on the one hand, or the uncoated portion (412, 412') of the surface (41) of the resistive element (4) on the other hand or the uncoated portion (312) of the surface (31) of the connecting element (3, 3') on the other hand, or either the first layer (50, 51) of the coating (5) on the one hand, or the further layer (52, 53) on the other hand, is contactable to detect a measurement signal for determining the temperature of the resistor (2).

This invention discloses a power-type composite thermistor for suppressing surge current, comprising an NTC thermistor chip and a PTC thermistor chip encapsulated in a resin layer with their two electrodes in contact. A common pin is fixed to the contact electrode of the NTC and PTC thermistor chips, and NTC and PTC thermistor pins are fixed to the non-contact electrode of the NTC and PTC thermistor chips, respectively. The contact NTC and PTC thermistor chips are connected in parallel in a circuit for suppressing surge current. This invention uses a soldered encapsulation method, facilitating mass production, and offers advantages such as low-temperature start-up, surge suppression, and adaptability to frequent power-on / off cycles. Its novel structure has promising application prospects.

Provided is an overcurrent protection element comprising: a core material comprising a top surface, a bottom surface opposite the top surface, a first side surface and a second side surface both located between the top and bottom surfaces, and a first end surface and a second end surface both located between the top and bottom surfaces. A first conductive layer is formed on the top surface of the core material, and a second conductive layer is formed on the bottom surface of the core material. An encapsulation layer covers the first conductive layer, the second conductive layer, and at least one of the side surfaces. A first terminal electrode is electrically connected to the first conductive layer, and a second terminal electrode is electrically connected to the second conductive layer. The overcurrent protection element has excellent electric conductivity, fast response, and sufficient self-protection during soldering process and in use.

A three-layer vertical shunt resistor, a power semiconductor and a method for manufacturing a three-layer vertical shunt resistor are disclosed. The three-layer vertical shunt resistor includes a first resistor body including a resistive material, a second resistor body coupled to an upper portion of the first resistor body and formed of a resistive material having better electrical conductivity than the resistive material of the first resistor body, a first terminal coupled to a lower portion of the first resistor body and formed of a metal material having better electrical conductivity than the resistive material of the first resister body, and a second terminal coupled to a lower portion of the first resistor body and arranged to be spaced apart from the first terminal and formed of a metal material having better electrical conductivity than the resistive material of the first resistor body.

The present invention provides a three-layer vertical shunt resistor, a power semiconductor, and a method for manufacturing a three-layer vertical shunt resistor that are free from defects, non-uniformity, and voids at the junction between the resistive material and the electrode material. [Solution] A three-layer vertical shunt resistor may include: a first resistor containing a resistive material; a second resistor coupled to the upper part of the first resistor and made of a resistive material having better electrical conductivity than the resistive material of the first resistor; a first terminal coupled to the lower part of the first resistor and made of a metal material having better electrical conductivity than the resistive material of the first resistor; and a second terminal coupled to the lower part of the first resistor, positioned apart from the first terminal, and made of a metal material having better electrical conductivity than the resistive material of the first resistor.

The application relates to a lightning arrester, comprising: a core body comprising an accommodating cavity; the fusing disconnector is positioned on one side of the core body; the first discharge gap is positioned on one side, far away from the core body, of the fusing disconnector; the resistor disc is positioned in the accommodating cavity; the ceramic jacket wraps the core body; a discharge ring surrounding the ceramic jacket; the fusing disconnector comprises a first push rod and a second push rod which penetrate through the ceramic outer sleeve in the second direction. The fusing disconnector comprises a first fusing branch circuit and a second fusing branch circuit, and the first fusing branch circuit and the second fusing branch circuit are connected in parallel between the discharge ring and the resistor disc; one end of the first push rod in the ceramic sleeve abuts against the first fusing branch, and one end of the second push rod in the ceramic sleeve abuts against the second fusing branch; the first fusing branch comprises a first metal block, and the second fusing branch comprises a second metal block; the melting point of the first metal block is lower than that of the second metal block, and / or the volume of the first metal block is smaller than that of the second metal block. The lightning arrester has an early warning function.

Provided is a circuit protection device including: a plate-shaped thermistor element comprising a first electrode and a second electrode; a first heat-dissipating terminal connected to the first electrode; a second heat-dissipating terminal connected to the second electrode; and a housing protecting the thermistor element, the first heat-dissipating terminal and the second heat-dissipating terminal. According to the present disclosure, the circuit protection device having a surface mount device (SMD) structure may be applied to a slim wall-mounted television.

An overcurrent protection element includes a first electrode layer, a second electrode layer, and a stack of PTC material layers disposed therebetween. The PTC material layers include a fluorine-containing high polymer base material having a melting point higher than 150°C and carbon black. The fluorine-containing high polymer base material includes a fluorine-containing high polymer having a melting point higher than 150°C. The carbon black is dispersed in the fluorine-containing high polymer base material. The overcurrent protection element has a resistance jump R jump_1000@16V / 50A of 0.80 to 1.20 after 1000 cycles at 16V / 50A. The overcurrent protection element has a resistance jump R jump_1000@25V / 50A of 0.90 to 1.30 after 1000 cycles at 25V / 50A.

The application discloses a power type negative temperature coefficient thermistor for inhibiting inrush current and a method, and relates to the technical field of negative temperature coefficient thermistors. The thermistor comprises a core body and pins. The pins are arranged on the electrodes on the two sides of the core body in a multi-contact surface structure. The core body is made of Mn-Co-Ni-La oxide with a nano composite gradient structure. The nano composite gradient structure Mn-Co-Ni-La oxide determines the upper limit of the core capabilities of the thermistor, such as inrush current inhibition, wide temperature stability and low power consumption. The redesign of the pins is a key to performance transmission, which ensures that the electrical properties (low contact resistance and high inrush current bearing) of the nano composite gradient structure Mn-Co-Ni-La oxide are not offset by structural defects. The setting of the support avoids the loss of effect of the nano composite gradient structure Mn-Co-Ni-La oxide due to heat accumulation and physical damage through heat management and mechanical protection. The three parts complement and cooperate with each other, thereby guaranteeing the performance of the thermistor with the nano composite gradient structure Mn-Co-Ni-La oxide.

Provided is a current detection resistor, such as a shunt resistor, wherein a. low specific resistance and a small thermal electromotive force with respect to copper are achieved, while maintaining a low TCR. A resistance alloy for use in a current detection shunt resistor includes 4.5 to 5.5 mass % of manganese, 0.05 to 0.30 mass % of silicon, 0.10 to 0.30 mass % of iron, and a balance being copper, and has a specific resistance of 15 to 25 μΩ·m.