947results about "Current responsive resistors" patented technology

To provide a resistance element having an electric resistance body with excellent stability and a method of manufacturing the same. The resistance element includes an electric resistance body, on a base body surface, consisting of a carbon nanotube structure layer 14, which configures a mesh structure in which at least plural carbon nanotubes are cross-linked to one another. The method of manufacturing the resistance element includes: an applying step of applying the base body surface 12 with a liquid solution containing carbon nanotubes having functional groups; and a cross-linking step of forming the carbon nanotube structure layer 14, used as an electric resistance body, that configures a mesh structure in which the plural carbon nanotubes are cross-linked to one another through curing of the liquid solution after application.

A voltage variable material (“VVM”) including an insulative binder that is formulated to intrinsically adhere to conductive and non-conductive surfaces is provided. The binder and thus the VVM is self-curable and applicable in a spreadable form that dries before use. The binder eliminates the need to place the VVM in a separate device or to provide separate printed circuit board pads on which to electrically connect the VVM. The binder and thus the VVM can be directly applied to many different types of substrates, such as a rigid FR-4 laminate, a polyimide, a polymer or a multilayer PCB via a process such as screen or stencil printing. In one embodiment, the VVM includes two types of conductive particles, one with a core and one without a core. The VVM can also have core-shell type semiconductive particles.

A laminated-type varistor includes a laminated structure and a pair of external electrodes disposed on a surface of the laminated structure. The laminated structure includes effective sintered body layers and internal electrodes. The internal electrodes are connected to the external electrodes and are disposed apart from each other in the direction perpendicular to lamination surfaces. Each of the internal electrodes has a multilayer electrode structure in which a plurality of electrode layers are arranged in layers while an ineffective sintered body layer is disposed therebetween. The laminated-type varistor has increased maximum peak current and maximum energy and reduction in clamping voltage.

The present invention provides overvoltage circuit protection. Specifically, the present invention provides a voltage variable material (“VVM”) that includes an insulative binder that is formulated to intrinsically adhere to conductive and nonconductive surfaces. The binder and thus the VVM is self-curable and may be applied to an application in the form of an ink, which dries in a final form for use. The binder eliminates the need to place the VVM in a separate device or for separate printed circuit board pads on which to electrically connect the VVM. The binder and thus the VVM can be directly applied to many different types of substrates, such as a rigid (FR-4) laminate, a polyimide or a polymer. The VVM can also be directly applied to different types of substrates that are placed inside a device.

A laminated chip electronic component includes: a ceramic body including internal electrodes and dielectric layers; external electrodes formed to cover both end portions of the ceramic body in a length direction; an active layer in which the internal electrodes are disposed in an opposing manner, while having the dielectric layers interposed therebetween, to form capacitance; and upper and lower cover layers formed on upper and lower portions of the active layer in a thickness direction, the lower cover layer having a thickness greater than that of the upper cover layer.

An organic positive temperature coefficient thermistor comprising a thermoplastic polymer matrix, a low-molecular organic compound having a melting point that is equal to or greater than 40 DEG C. and less than 100 DEG C. and conductive particles, each having spiky protuberances, is obtained by crosslinking a milled mixture of these components with a silane coupling agent comprising a vinyl group or a (meth)acryloyl group and an alkoxy group. This organic positive temperature coefficient thermistor has sufficiently low resistance at room temperature and a large rate of resistance change between an operating state and a non-operating state, and can be operated at less than 100 DEG C. with a reduced temperature vs. resistance curve hysteresis, ease of control of operating temperature, and high performance stability.

A semiconductor memory device comprising a variable resistance element having a variable resistor between a first electrode and a second electrode, in which electric resistance is changed by applying a voltage pulse between the electrodes comprises at least one reaction preventing film made of a material having an action of blocking the permeation of a reduction species promoting a reduction reaction of the variable resistor and an oxidation species promoting an oxidation reaction of the variable resistor. This prevents the resistance value of the variable resistance element from fluctuating due to a reduction reaction or an oxidation reaction of the variable resistor caused by hydrogen or oxygen existing in the manufacturing steps, so that a semiconductor memory device having a small variation of the resistance value and having a good controllability can be realized with good repeatability.

The variable resistance element of the present invention is a variable resistance element having an electrode, the other electrode, and a metal oxide material sandwiched between the electrodes and having an electrical resistance, between the electrodes, changing reversibly in response to a voltage applied between the electrodes. The variable resistance element further includes, inside the metal oxide material, a low resistance material having a lower electrical resistance than the metal oxide material and being out of contact with at least either one of the electrodes. This makes it possible to reduce a forming voltage for providing a conductive section inside the metal oxide material, without causing a leakage current to increase.

A method of manufacturing a ceramic electronic component prevents variations in characteristics even when the ceramic electronic component is embedded in a wiring board. Ceramic green sheets containing an organic binder having a degree of polymerization in a range from about 1000 to about 1500 are prepared. A first conductive paste layer is formed on a surface of each of the ceramic green sheets. The ceramic green sheets are laminated to form a raw ceramic laminated body. A second conductive paste layer is formed on a surface of the raw ceramic laminated body. The raw ceramic laminated body formed with the second conductive paste layer is fired.

A device to protect against a surge voltage includes a body having a hexahedron shape and filled with a varistor material, a pair of input signal electrodes attached to a first side surface of the body along upward and downward directions, a pair of output signal electrodes attached to a second side surface of the body that faces the first side surface of the body in the upward and downward directions, a ground electrode attached to an upper surface of the body, at least one pair of signal connection electrode plates to connect the input signal electrodes and the output signal electrodes, and a ground plate to be connected to the ground electrode. Thus, the device can protect an electronic circuit from a surge voltage and match an impedance of a transmission line.

The invention relates to a high-temperature resistant PTC electroconductive composition, which comprises 20 to 70 percent of organic polymers, 25 to 75 percent of electroconductive filler, 1 to 30 percent of inorganic filler and 0.1 to 10 percent of additive, wherein the preferred melting point of the organic polymers is more than 150 DEG C; the organic polymers are one or more crystalline or semi-crystalline polymers and made of one or more of nylon 11, nylon 12, polyvinylidene fluoride, soluble poly(tetrafluoroethylene), ethylene-tetrafluoroethylene copolymers, perfluoroethylene-propylene, ethylene-chlorotrifluoroethylene and copolymers thereof. The invention also provides a high-temperature resistant PTC device containing the composition and a manufacturing method thereof. The high-temperature resistant PTC device containing the composition has low resistance, high PTC strength and superior resistance stability, so that the high-temperature resistant PTC device can be used for overcurrent protection of circuits in high-temperature environments such as automobile motors and the like. Moreover, the high-temperature resistant PTC device is simple and convenient to manufacture and has high efficiency.

A voltage variable material (“VVM”) including an insulative binder that is formulated to intrinsically adhere to conductive and non-conductive surfaces is provided. The binder and thus the VVM is self-curable and applicable in a spreadable form that dries before use. The binder eliminates the need to place the VVM in a separate device or to provide separate printed circuit board pads on which to electrically connect the VVM. The binder and thus the VVM can be directly applied to many different types of substrates, such as a rigid (FR-4) laminate, a polyimide or a polymer. The VVM can also be directly applied to different types of substrates that are placed inside a device. In one embodiment, the VVM includes doped semiconductive particles having a core, such which can be silicon, and an inert coating, which can be an oxide. The particles are mixed in the binder with conductive particles.

Provided is a variable resistance element capable of performing a stable resistance switching operation and having a favorable resistance value retention characteristics, comprising a variable resistor 2 sandwiched between a upper electrode 1 and lower electrode 3 and formed of titanium oxide or titanium oxynitride having a crystal grain diameter of 30 nm or less. When the variable resistance 2 is formed under the substrate temperature of 150° C. to 500° C., an anatase-type crystal having a crystal grain diameter of 30 nm or less is formed. Since the crystalline state of the variable resistor changes by applying a voltage pulse and the resistance value changes, no forming process is required. Moreover, it is possible to perform a stable resistance switching operation and obtain an excellent effect that the resistance fluctuation is small even if the switching is repeated, or the variable resistance element is stored for a long time under a high temperature.

The present invention relates to a material of an over voltage protection device and an over voltage protection device manufactured by the material. The material comprises a non-conductive powder, a metal conductive powder, and an adhesive. The over voltage protection device comprises a first electrode, a second electrode, and a porous structure connected between the first electrode and the second electrode. The present invention also relates to a method for manufacturing the over voltage protection device. The present invention also relates to a method of adjusting the breakdown voltage of an over voltage protection device.

A thin film resistor device and method of manufacture includes a layer of a thin film conductor material and a current density enhancing layer (CDEL). The CDEL is an insulator material adapted to adhere to the thin film conductor material and enables the said thin film resistor to carry higher current densities with reduced shift in resistance. In one embodiment, the thin film resistor device includes a single CDEL layer formed on one side (atop or underneath) the thin film conductor material. In a second embodiment, two CDEL layers are formed on both sides (atop and underneath) of the thin film conductor material. The resistor device may be manufactured as part of both BEOL and FEOL processes.

In an electronic component, an outer electrode includes a sintered layer including a sintered metal, a reinforcement layer not containing Sn but including Cu or Ni, an insulation layer, and a Sn-containing layer. The sintered layer extends from each end surface of an element assembly onto at least one main surface thereof to cover each end surface of the element assembly. The reinforcement layer extends on the sintered layer and covers the sintered layer entirely. The insulation layer is directly provided on the reinforcement layer at each end surface of the element assembly, extends in a direction perpendicular or substantially perpendicular to a side surface of the element assembly, and defines a portion of a surface of the outer electrode. The Sn-containing layer covers the reinforcement layer except for a portion of the reinforcement layer that is covered by the insulation layer, and defines another portion of the surface of the outer electrode.

Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.

A multilayer varistor comprising a varistor chip body having alternately stacked ceramic layers and internal electrode layers is provided. The ceramic layer is composed of a composite oxide containing Ti and/or Zr and Ba as a main component and Si and/or Al as a subordinate component, substantially free of Cr, and has a perovskite phase. The internal electrode layer is composed of a conductor containing a base metal such as Ni or Ni alloy as a main component. The varistor is used in an electric circuit for suppressing noise.

A metal oxide varistor integrally formed with a heat protection structure that will automatically go to open circuit in conditions of overheating due to sustained over-voltages. The metal oxide varistor integrally formed with a heat protection structure has a body, an insulation bracket, a number of terminals and a fuse. The insulation bracket is deposited on the body and has a number of slots. The fuse connects to the body and one of the terminals. The fuse is mounted one of the slots of the insulation bracket. The fuse reacts to the overheating timely and the melting fuse spreads quickly with the assistance of capillary action evolved by the slots of the insulation bracket to speed up the action to go to open circuit in against damage due to sustained over-voltages.

A surface-mounted over-current protection device with positive temperature coefficient (PTC) behavior is disclosed. The surface-mounted over-current protection device comprises a first metal foil, a second metal foil corresponding to the first metal foil, a PTC material layer stacked between the first metal foil and the second metal foil, a first metal electrode, a first metal conductor electrically connecting the first metal foil to the first metal electrode, a second metal electrode corresponding to the first metal electrode, a second metal conductor electrically connecting the second metal foil to the second metal electrode, and at least one insulated layer to electrically insulate the first metal electrode from the second metal electrode. The surface-mounted over-current protection device, at 25° C., indicates that a hold current thereof divided by the product of a covered area thereof and the number of the conductive composite module is at least 0.16 A/mm².