834results about "Varistors" patented technology

Improved termination features for multilayer electronic components are disclosed. Monolithic components are provided with plated terminations whereby the need for typical thick-film termination stripes is eliminated or greatly simplified. Such termination technology eliminates many typical termination problems and enables a higher number of terminations with finer pitch, which may be especially beneficial on smaller electronic components. The subject plated terminations are guided and anchored by exposed internal electrode tabs and additional anchor tab portions which may optionally extend to the cover layers of a multilayer component. Such anchor tabs may be positioned internally or externally relative to a chip structure to nucleate additional metallized plating material. External anchor tabs positioned on one or both of top and bottom surfaces of a monolithic structure can facilitate the formation of selective wrap-around plated terminations. The disclosed technology may be utilized with a plurality of monolithic multilayer components, including interdigitated capacitors, multilayer capacitor arrays, and integrated passive components. A variety of different plating techniques and termination materials may be employed in the formation of the subject self-determining plated terminations.

Improved termination features for multilayer electronic components are disclosed. Monolithic components are provided with plated terminations whereby the need for typical thick-film termination stripes is eliminated or greatly simplified. Such termination technology eliminates many typical termination problems and enables a higher number of terminations with finer pitch, which may be especially beneficial on smaller electronic components. The subject plated terminations are guided and anchored by exposed internal electrode tabs and additional anchor tab portions which may optionally extend to the cover layers of a multilayer component. Such anchor tabs may be positioned internally or externally relative to a chip structure to nucleate additional metallized plating material. External anchor tabs positioned on top and bottom sides of a monolithic structure can facilitate the formation of wrap-around plated terminations. The disclosed technology may be utilized with a plurality of monolithic multilayer components, including interdigitated capacitors, multilayer capacitor arrays, and integrated passive components. A variety of different plating techniques and termination materials may be employed in the formation of the subject self-determining plated terminations.

A laminated-type varistor includes a laminated structure and a pair of external electrodes disposed on a surface of the laminated structure. The laminated structure includes effective sintered body layers and internal electrodes. The internal electrodes are connected to the external electrodes and are disposed apart from each other in the direction perpendicular to lamination surfaces. Each of the internal electrodes has a multilayer electrode structure in which a plurality of electrode layers are arranged in layers while an ineffective sintered body layer is disposed therebetween. The laminated-type varistor has increased maximum peak current and maximum energy and reduction in clamping voltage.

A laminated chip electronic component includes: a ceramic body including internal electrodes and dielectric layers; external electrodes formed to cover both end portions of the ceramic body in a length direction; an active layer in which the internal electrodes are disposed in an opposing manner, while having the dielectric layers interposed therebetween, to form capacitance; and upper and lower cover layers formed on upper and lower portions of the active layer in a thickness direction, the lower cover layer having a thickness greater than that of the upper cover layer.

An organic positive temperature coefficient thermistor comprising a thermoplastic polymer matrix, a low-molecular organic compound having a melting point that is equal to or greater than 40 DEG C. and less than 100 DEG C. and conductive particles, each having spiky protuberances, is obtained by crosslinking a milled mixture of these components with a silane coupling agent comprising a vinyl group or a (meth)acryloyl group and an alkoxy group. This organic positive temperature coefficient thermistor has sufficiently low resistance at room temperature and a large rate of resistance change between an operating state and a non-operating state, and can be operated at less than 100 DEG C. with a reduced temperature vs. resistance curve hysteresis, ease of control of operating temperature, and high performance stability.

A method of manufacturing a ceramic electronic component prevents variations in characteristics even when the ceramic electronic component is embedded in a wiring board. Ceramic green sheets containing an organic binder having a degree of polymerization in a range from about 1000 to about 1500 are prepared. A first conductive paste layer is formed on a surface of each of the ceramic green sheets. The ceramic green sheets are laminated to form a raw ceramic laminated body. A second conductive paste layer is formed on a surface of the raw ceramic laminated body. The raw ceramic laminated body formed with the second conductive paste layer is fired.

There is a provided a magnetic and dielectric composite electronic device, comprising: a first region with a plurality of magnetic material sheets being layered; a second region with a plurality of dielectric material sheets being layered; and a third region as a middle layer interposed between the first region and the second region, including a Zn—Ti based material to prevent diffusion of the materials during co-firing of the first region and the second region, and the first region, the second region and the third region are integrally formed in a single body. In accordance with the present invention, the low pass filter including the function of the varistor is realized to obtain the EMI function and the ESD control effect. Furthermore, the one chip electronic device having the composite functions is manufactured by a simple process, and the interdiffusion between the different materials forming the magnetic and the dielectric parts is prevented to secure the durability and electrical characteristics of the product.

Provided is a variable resistance element capable of performing a stable resistance switching operation and having a favorable resistance value retention characteristics, comprising a variable resistor 2 sandwiched between a upper electrode 1 and lower electrode 3 and formed of titanium oxide or titanium oxynitride having a crystal grain diameter of 30 nm or less. When the variable resistance 2 is formed under the substrate temperature of 150° C. to 500° C., an anatase-type crystal having a crystal grain diameter of 30 nm or less is formed. Since the crystalline state of the variable resistor changes by applying a voltage pulse and the resistance value changes, no forming process is required. Moreover, it is possible to perform a stable resistance switching operation and obtain an excellent effect that the resistance fluctuation is small even if the switching is repeated, or the variable resistance element is stored for a long time under a high temperature.

A thin film resistor device and method of manufacture includes a layer of a thin film conductor material and a current density enhancing layer (CDEL). The CDEL is an insulator material adapted to adhere to the thin film conductor material and enables the said thin film resistor to carry higher current densities with reduced shift in resistance. In one embodiment, the thin film resistor device includes a single CDEL layer formed on one side (atop or underneath) the thin film conductor material. In a second embodiment, two CDEL layers are formed on both sides (atop and underneath) of the thin film conductor material. The resistor device may be manufactured as part of both BEOL and FEOL processes.

In an electronic component, an outer electrode includes a sintered layer including a sintered metal, a reinforcement layer not containing Sn but including Cu or Ni, an insulation layer, and a Sn-containing layer. The sintered layer extends from each end surface of an element assembly onto at least one main surface thereof to cover each end surface of the element assembly. The reinforcement layer extends on the sintered layer and covers the sintered layer entirely. The insulation layer is directly provided on the reinforcement layer at each end surface of the element assembly, extends in a direction perpendicular or substantially perpendicular to a side surface of the element assembly, and defines a portion of a surface of the outer electrode. The Sn-containing layer covers the reinforcement layer except for a portion of the reinforcement layer that is covered by the insulation layer, and defines another portion of the surface of the outer electrode.

Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.

The invention relates to a hand-held electric tool, comprising a shell which is provided with a handle, a motor which is arranged in the shell and used for driving a working head and controlling the rotation speed of the working head when working, a displacement button which is arranged on the handle and used for being pressed by the operator, an elastic part which is combined with the displacement button, a pressure sensor which is connected with the elastic part and provides the output voltage according to the position of the displacement button, and a control component which is connected with the motor and variably controls the rotation speed of the motor by responding the output voltage according to the position of the displacement button. By adopting the structure, the integral dimension of the speed regulating switch is greatly reduced, and then the dimension of the external diameter of the handle is reduced, thus being convenient for the holding and operation of the operators with comparatively small hand shape.

A surface-mounted over-current protection device with positive temperature coefficient (PTC) behavior is disclosed. The surface-mounted over-current protection device comprises a first metal foil, a second metal foil corresponding to the first metal foil, a PTC material layer stacked between the first metal foil and the second metal foil, a first metal electrode, a first metal conductor electrically connecting the first metal foil to the first metal electrode, a second metal electrode corresponding to the first metal electrode, a second metal conductor electrically connecting the second metal foil to the second metal electrode, and at least one insulated layer to electrically insulate the first metal electrode from the second metal electrode. The surface-mounted over-current protection device, at 25° C., indicates that a hold current thereof divided by the product of a covered area thereof and the number of the conductive composite module is at least 0.16 A/mm².

An electrical circuit protection device with three supporting substrates, two PTC elements, and first and second end terminations. The first and third substrates have an electrode formed on a first surface thereof. The second substrate has electrodes formed on both surfaces thereof. The first PTC element is laminated between the first and second substrates, electrically connecting the

first electrodes formed on the first and second substrates. The second PTC element is laminated between the second and third substrates, electrically connecting the second electrode formed on the second substrate and the first electrode formed on the third substrate. The end terminations wraps around opposite ends of the device. The first end termination is in electrical contact with the first electrodes formed on the second and third substrates and the second end termination is in electrical contact with the first electrode formed on the first substrate and the second electrode formed on the second substrate. The PTC elements are electrically connected in parallel between the end terminations. The multi-layered configuration allows for an increased electrical rating without increasing the overall footprint, i.e., length and width, of the device.

A ceramic electronic component includes an electronic component body and first and second metal terminals. The electronic component body includes a bare ceramic body and first and second outer electrodes. The first and second outer electrodes of the electronic component body are connected respectively to the first and second metal terminals by solders containing Sn as a main constituent. An alloy layer containing Ni—Sn is provided in at least a portion of a bonding interface between adjacent two of the first and second metal terminals and the first and second outer electrodes.

Described are a thin-film temperature-sensitive resistor material which comprises, at a temperature-sensitive resistor portion, a mixed crystal of a nitride and oxide of a transition metal such as vanadium preferably, that represented by the formula: MNxOy wherein 0<x<1, and 2</=y</=13/6, simultaneously exhibits a high temperature coefficient of resistance and a low specific resistance at about room temperature, and has excellent sensitivity at about room temperature; and a process for the production of a thin-film temperature-sensitive resistor material, which comprises forming its temperature-sensitive resistor portion by using a gas-atmosphere composed mainly of a nitrogen gas preferably, a mixed gas composed of nitrogen, argon and oxygen, and has a flow rate ratio of nitrogen to oxygen (nitrogen/oxygen) of 14/1 to 23/1.

A flexible thin metal film thermal sensing system is provided. A thermally-conductive film made from a thermally-insulating material is doped with thermally-conductive material. At least one layer of electrically-conductive metal is deposited directly onto a surface of the thermally-conductive film. One or more devices are coupled to the layer(s) to measure an electrical characteristic associated therewith as an indication of temperature.

A ceramic electronic component includes a laminated body including ceramic layers and conductor layers stacked alternately; and first and second external electrodes provided on portions of the laminated body. Each of the first and second external electrodes includes a sintered metal layer provided on the laminated body, a conductive resin layer covering the sintered metal layer, and a plated layer covering the conductive resin layer. The maximum length of the sintered metal layer provided on the second principal surface is shorter than the maximum length of the sintered metal layer provided on each of the first and second side surfaces.