907 results about "Sheet resistance" patented technology

In a method of forming an ohmic layer of a DRAM device, the metal silicide layer between the storage node contact plug and the lower electrode of a capacitor is formed as the ohmic layer by a first heat treatment under a first temperature and an instantaneous second heat treatment under a second temperature higher than the first temperature. Thus, the metal silicide layer has a thermo-stable crystal structure and little or no agglomeration occurs on the metal silicide layer in the high temperature process. Accordingly, the sheet resistance of the ohmic layer may not increase in spite of the subsequent high temperature process.

A coated article is provided, having a coating supported by a glass substrate where the coating includes at least one color and/or reflectivity-adjusting absorber layer. The absorber layer(s) allows color tuning, and reduces the glass side reflection of the coated article and/or allows sheet resistance of the coating to be reduced without degrading glass side reflection. In certain example embodiments the absorber layer is provided between first and second dielectric layers which may be of substantially the same material and/or composition. In certain example embodiments, the coated article is capable of achieving desirable transmission, together with desired color, low reflectivity, and low selectivity, when having only one infrared (IR) reflecting layer of silver and/or gold. Coated articles according to certain example embodiments of this invention may be used in the context of insulating glass (IG) window units, monolithic windows, or the like.

Reversible electrochemical mirror (REM) devices typically comprise a conductive oxide mirror electrode that is substantially transparent to radiation of some wavelengths, a counter electrode that may also be substantially transparent, and an electrolyte that contains ions of an electrodepositable metal. A voltage applied between the two electrodes causes electrodeposition of a mirror deposit on the mirror electrode and dissolution of the mirror deposit on the counter electrode, and these processes are reversed when the polarity of the applied voltage is changed. Such REM devices provide precise control over the reflection and transmission of radiation and can be used for a variety of applications, including smart windows and automatically adjusting automotive mirrors. According to the present invention, measurements of the sheet resistance of the mirror electrode in a REM device are correlated with the thickness of electrodeposited mirror metal and can be used to monitor the reflectance of the device. Sheet resistance measurements can be performed while the mirror state of the device is being switched if adequate isolation between the measurement and switching circuits is provided. This can be accomplished by use of external resistors or more sophisticated circuitry, or by taking advantage of the relatively high sheet resistance of the mirror electrode itself. Monitoring the reflectance of REM devices according to this invention provides significant cost and performance advantages.

A coated article is provided so as to have a fairly high visible transmission (TY or T_vis) to sheet resistance (R_s) ratio (i.e., a ratio T_vis/R_s). The higher this ratio, the better the coated article's combined functionality of providing for both good solar performance (e.g., ability to reflect and/or absorb IR radiation) and high visible transmission. In certain example embodiments, coated articles herein may be heat treatable. Coated articles herein may be used in the context of insulating glass (IG) window units, architectural or residential monolithic window units, vehicle window units, and/or the like.

Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C₂H₂, CH₄, or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).

Provided is a transparent electrode including a graphene sheet. A transparent electrode having high conductivity, low sheet resistance, and low surface roughness can be prepared by employing the graphene sheet.

A flexible fingerprint sensor laminate comprising: a layer of flexible substrate having a front surface and a back surface, at least a domain of electrically conductive material deposited on the front surface, a protective hard coating layer that covers the domain of electrically conductive material, and a plurality of sensor electrodes deposited preferably on the back surface and related circuitry (e.g. integrated circuit for driving and sensing). Preferably, the layer of flexible substrate is no greater than 20 μm in thickness, the domain of electrically conductive material has a thickness no greater than 2 μm, the protective hard coating has a thickness no greater than 1 μm, and the laminate has a surface sheet resistance no greater than 200 Ohm per square and surface scratch resistance no less than 3 H. The laminate exhibits good scratch resistance, low sheet resistance, good flexibility and mechanical integrity. The invention also provides a biometric sensor, such as a fingerprint sensor. The invention further provides a process for producing such a sensor laminate.

An anti-static, anti-reflection, transparent coating for a transpatent substrate, the coating including at least one electrically conductive layer, wherein the sheet resistance of the coating is less than about 10¹⁰ ohm/square. The coating is preferably higher transparent.

Provided are methods of void-free tungsten fill of high aspect ratio features. According to various embodiments, the methods involve a reduced temperature chemical vapor deposition (CVD) process to fill the features with tungsten. In certain embodiments, the process temperature is maintained at less than about 350° C. during the chemical vapor deposition to fill the feature. The reduced-temperature CVD tungsten fill provides improved tungsten fill in high aspect ratio features, provides improved barriers to fluorine migration into underlying layers, while achieving similar thin film resistivity as standard CVD fill. Also provided are methods of depositing thin tungsten films having low-resistivity. According to various embodiments, the methods involve performing a reduced temperature low resistivity treatment on a deposited nucleation layer prior to depositing a tungsten bulk layer and/or depositing a bulk layer via a reduced temperature CVD process followed by a high temperature CVD process.

Conductive polymers can be used as the signal carrying layers in resistive touch screens. Using conductive polymers can allow higher sheet resistance than is conventionally obtained using indium tin oxide while maintaining electrical continuity and durability of the layer. Higher sheet resistance can also lead to reduced errors and reduced power consumption, as well as better optical transmission. Sheet resistance may be limited on an upper end by desired data sampling rates. Also disclosed are resistive touch screens that employ a conductive polymer on both the topsheet and bottom substrate and that can be operated with the use of conventional electronics.

An optical resonator type organic electroluminescent element has a multilayered film mirror 30, a transparent electrode 12, an electron hole transportation layer 14 and a luminescent layer 16 configuring an organic layer, and a metallic electrode mirror 20, formed on a glass substrate 10. The optical resonator type organic electroluminescent element amplifies a specific wavelength (especially, in a range of about 30 nm toward a shorter wavelength side from a luminescence peak wavelength of the organic layer) in luminescence light by a minute optical resonator, which comprises the multilayered film mirror 30 and the metallic electrode mirror 20. It is determined that the minute optical resonator has an optical length L which is twice as long as a resonance wavelength, the organic layer has a thickness of 100 nm or more, and the transparent electrode has a thickness of 50 nm or more or a thickness so to have a sheet resistance of 30 OMEGA/square or less. Thus, the transparent electrode can be prevented from generating heat even when a large current is caused to flow into it, and the element characteristics can be reliably prevented from being deteriorated. Moreover, the reliability of this element can be improved because the organic layer containing the luminescent layer has a sufficient thickness.

Provided are methods of void-free tungsten fill of high aspect ratio features. According to various embodiments, the methods involve a reduced temperature chemical vapor deposition (CVD) process to fill the features with tungsten. In certain embodiments, the process temperature is maintained at less than about 350° C. during the chemical vapor deposition to fill the feature. The reduced-temperature CVD tungsten fill provides improved tungsten fill in high aspect ratio features, provides improved barriers to fluorine migration into underlying layers, while achieving similar thin film resistivity as standard CVD fill. Also provided are methods of depositing thin tungsten films having low-resistivity. According to various embodiments, the methods involve performing a reduced temperature low resistivity treatment on a deposited nucleation layer prior to depositing a tungsten bulk layer and/or depositing a bulk layer via a reduced temperature CVD process followed by a high temperature CVD process.

The invention discloses nano-silver conductive ink and a conductive film prepared by employing the same. The technical scheme is characterized in that the nano-silver conductive ink is prepared, satisfies the requirements on light transmittance, film electrical resistance and adhesive force, is applicable to production of the conductive film; and the prepared conductive film is effectively controlled in flatness and easy to etch, is capable of effectively satisfying the requirements on patterning of touch-control screens and display panels, and has extremely good utility value.

A coated article is provided that may be heat treated in certain example embodiments. A coating of the coated article includes a tin oxide inclusive layer, a silicon nitride inclusive layer and/or a zinc oxide inclusive layer located under an infrared (IR) reflecting layer of a material such as silver. It has been found that this may result in improved thermal stability upon heat treatment, higher visible transmission, desirable coloration, lower sheet resistance (R_s), and/or lower emissivity in certain example embodiments of this invention. In certain embodiments, a zinc oxide inclusive layer may be provided above a contact layer over the IR reflecting layer, again for improving thermal stability, coloration, sheet resistance and/or visible transmission.

A semiconductor device is provided, which makes it possible to decrease the electric sheet resistance of source/drain regions of MOSFETs in a peripheral circuitry without degradation of the data writing speed in nonvolatile memory cells. This device is comprised of nonvolatile memory cells and a peripheral circuitry provided on a same semiconductor substrate. The nonvolatile memory cells are formed by a first plurality of MOSFETs of a first conductivity type. The peripheral circuitry includes a second plurality of MOSFETs of the first conductivity type. Each of the first plurality of MOSFETs is equipped with a gate electrode having a floating gate for data storing and source/drain regions having substantially no silicide films. Each of the second plurality of MOSFETs is equipped with source/drain regions having silicide films and a doping concentration lower than that of the source/drain regions of each of the first plurality of MOSFETs. It is preferred that the doping concentration of the source/drain regions of the first plurality of MOSFETs is equal to 1x1019 atoms/cm3 or higher and the doping concentration of the source/drain regions of the second plurality of MOSFETs is lower than 1x1019 atoms/cm3.

An organic electroluminescence display device with high luminescence and high display quality comprises a plurality of active elements, and a plurality of organic electroluminescence elements which produce luminescence through control by the active elements, on a substrate; wherein the organic electroluminescence element has a structure in which a lower electrode, an organic layer, and an upper electrode CD are laminated in this order from the substrate side; the upper electrode CD of the plurality of organic electroluminescence elements is formed as an electrode common to all the organic electroluminescence elements; an electrode is prepared between the upper electrode CD and the organic layer; and the sheet resistance between two points on the upper electrode CD which sandwich the electrode is lower than that between two points which do not sandwich the metal electrode.

A nanostructure film, comprising at least one interconnected network of nanostructures, wherein the nanostructure film is optically transparent and electrically conductive. A method for improving the optoelectronic properties of a nanostructure film, comprising: forming a nanostructure film having a thickness that, if uniform, would result in a first optical transparency and a first sheet resistance that are lower than desired; and patterning holes in the nanostructure film, such that a desired higher second optical transparency and a second sheet resistance are achieved. A method for depositing a nanostructure film on a rigid substrate comprises: depositing the nanostructure film on a flexible substrate; and transferring the nanostructure film from the flexible substrate to a rigid substrate, wherein the flexible substrate comprises at least one of a release liner and a heat- or chemical-sensitive adhesive layer.

The semiconductor device fabrication method comprising the step of forming a gate electrode 54p on a semiconductor substrate 34; the step of forming a source/drain diffused layer 64p in the semiconductor substrate 34 on both sides of the gate electrode 54p; the step of burying a silicon germanium layer 100b in the source/drain diffused layer 64p; the step of forming an amorphous layer at an upper part of the silicon germanium layer 101; the step of forming a nickel film 66 on the amorphous layer 101; and the step of making thermal processing to react the nickel film 66 and the amorphous layer 101 with each other to form a silicide film 102b on the silicon germanium layer 100b. Because of no crystal boundaries in the amorphous layer 101 to react with the nickel film 66, the silicidation homogeneously goes on. Because of no crystal faces in the amorphous layer 101, the Ni(Si_1-xGe_x)₂ crystals are prevented from being formed in spikes. Thus, even when the silicon germanium layer 100b is silicided by using a thin nickel film 66, the sheet resistance can be low, and the junction leak current can be suppressed.

Polymer binders, e.g., crosslinked polymer binders, have been found to be an effective film component in creating high quality transparent electrically conductive coatings or films comprising metal nanostructured networks. The metal nanowire films can be effectively patterned and the patterning can be performed with a high degree of optical similarity between the distinct patterned regions. Metal nanostructured networks are formed through the fusing of the metal nanowires to form conductive networks. Methods for patterning include, for example, using crosslinking radiation to pattern crosslinking of the polymer binder. The application of a fusing solution to the patterned film can result in low resistance areas and electrically resistive areas. After fusing the network can provide desirable low sheet resistances while maintaining good optical transparency and low haze. A polymer overcoat can further stabilize conductive films and provide desirable optical effects. The patterned films can be useful in devices, such as touch sensors.

Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C₂H₂, CH₄, or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).

Certain example embodiments of this invention relate to articles including anticondensation coatings that are exposed to an external environment, and/or methods of making the same. In certain example embodiments, the anticondensation coatings may be survivable in an outside environment. The coatings also may have a sufficiently low sheet resistance and hemispherical emissivity such that the glass surface is more likely to retain heat from the interior area, thereby reducing (and sometimes completely eliminating) the presence condensation thereon. The articles of certain example embodiments may be, for example, skylights, vehicle windows or windshields, IG units, VIG units, refrigerator/freezer doors, and/or the like.

A resistor is formed between devices in an integrated circuit by forming a patterned trench in an intralayer dielectric (ILD) deposited over the devices, filling the trench with polysilicon and planarizing the polysilicon. The resistance of the resistor is defined by determining and selecting the size and form of the trench including the width, length, depth and orientation of the trench. In some embodiments, the resistance of the resistor is also controlled by adding selected amounts and species of dopants to the polysilicon. In some embodiments, the resistance is controlled by directly saliciding the polysilicon in the trench.

A precision resistor of NiCr or SiCr has a refractive and thermal barrier layer beneath the resistor. The refractive barrier is a layer of refractory metal. The refractory metal prevents the incident laser beam of a laser trimmer penetrating lower layers of the device. Unwanted reflections and refractions caused by lower layers are avoided. The reflective barrier layer is a material selected from the group consisting of tungsten, titanium, molybdenum, TiSi2l3,14, CoSi215, MoSi2, TaSi2 and WSi2.

Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C₂H₂, CH₄, or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).

Various methods of fabricating a silicide structure are provided. In one aspect, a method of fabricating a circuit structure on a silicon surface is provided that includes exposing the silicon surface to a plasma ambient containing hydrogen and an inert gas, and depositing a metallic material capable of forming silicide on the silicon surface. The metallic material is heated to form a metal silicide on the silicon surface. The method provides for low sheet resistance silicide structures by eliminating native oxide films without the risk of spacer material backsputtering.

Metal nanowires with high linearity can be produced using metal salts at a relatively low temperature. A transparent conductive film can be formed using the metal nanowires. Particularly, the transparent conductive film has high transmittance, low sheet resistance, and good thermal, chemical and mechanical stability. The transparent conductive film has a high electrical conductivity due to the high linearity of the metal nanowires. The metal nanowires take up 5% or less of the volume of the transparent conductive film, ensuring high transmittance of the transparent conductive film. Furthermore, the metal nanowires are useful as replacements for existing conductive materials, such as ITO, conductive polymers, carbon nanotubes and graphene. The metal nanowires can be applied to flexible substrates and other various substrates due to their good adhesion and high applicability to the substrates. Moreover, the metal nanowires can find application in various fields, such as displays and solar cell devices.

Transparent conductors and methods of forming same are provided. A transparent conductor can include a nanostructure layer and a low sheet resistance grid disposed on a transfer film surface having an acceptable level of surface roughness. The presence of the low sheet resistance grid lowers the sheet resistance of the transparent conductor to an acceptable level. After release of the transparent conductor from the transfer film, the surface roughness of the transparent conductor will be at least comparable to the surface roughness of the transfer film.

Certain example embodiments of this invention relate to articles including anticondensation coatings that are exposed to an external environment, and/or methods of making the same. In certain example embodiments, the anticondensation coatings may be survivable in an outside environment. The coatings also may have a sufficiently low sheet resistance and hemispherical emissivity such that the glass surface is more likely to retain heat from the interior area, thereby reducing (and sometimes completely eliminating) the presence condensation thereon. The articles of certain example embodiments may be, for example, skylights, vehicle windows or windshields, IG units, VIG units, refrigerator/freezer doors, and/or the like.

A thin film resistor that has a substantially zero TCR is provided as well as a method for fabricating the same. The thin film resistor includes at least two resistor materials located over one another. Each resistor material has a different temperature coefficient of resistivity such that the effective temperature coefficient of resistivity of the thin film resistor is substantially 0 ppm/° C. The thin film resistor may be integrated into a interconnect structure or it may be integrated with a metal-insulator-metal capacitor (MIMCAP).

An emitter layer is provided in stripes in a direction orthogonal to an effective gate trench region connected to a gate electrode and a dummy trench region isolated from the gate electrode. A width of the emitter layer is determined to satisfy a predetermined relational expression so as not to cause latch-up in an underlying P base layer. In the predetermined relational expression, an upper limit value of the width W of the emitter layer is (3500/Rspb)·Wso·exp(decimation ratio), where Rspb is a sheet resistance of the P base layer immediately below the emitter layer, Wso is an interval between the trenches, and the decimation ratio is a ratio of the number of the effective gate trench region to the total number of the trench regions. Variations in saturation current in a trench IGBT can be suppressed, and a tolerance of an Reverse Bias Safe Operation Area can be improved.