485 results about "Sheet resistance" patented technology

The invention relates to the technical field of ITO coating materials, and provides a low-sheet-resistance and high-light-transmittance ITO coating film and a preparation method thereof.The preparation method comprises the steps that S1, an yttrium-doped zirconium oxide substrate is prepared; s2, performing surface activation on the yttrium-doped zirconium oxide substrate; s3, performing magnetron sputtering in a radio frequency magnetron sputtering chamber, and forming a layer of ITO film on the surface of the yttrium-doped zirconia substrate; and S4, annealing treatment and gradient cooling treatment are carried out. The epitaxial growth of the ITO coating film is optimized through the prepared yttrium-doped zirconia substrate, and the magnetron sputtering, annealing and gradient cooling processes are combined, so that the microstructure of the film is optimized, the carrier mobility and the uniformity and stability of the film are improved, the grain boundary defect and carrier scattering loss in the ITO coating film are reduced, and the performance of the film is improved. The low sheet resistance and high light transmittance of the ITO coating film are synergistically improved, and the obtained ITO coating film has important application value in the fields of high-performance optoelectronic devices, transparent conductive films and the like.

The invention relates to the technical field of flexible transparent electrodes, in particular to a Cu / Al laminated metal grid flexible transparent electrode and a preparation method thereof. The Cu / Al laminated metal grid flexible transparent electrode comprises a flexible substrate, a copper layer arranged on the flexible substrate and an aluminum layer arranged on the copper layer, and the aluminum layer located on the outer layer spontaneously forms an Al2O3 passivation layer with the thickness of 2-5 nm in air. The Al2O3 passivation layer can effectively prevent oxygen and moisture from permeating inwards, so that oxidation of the copper layer in a humid or high-temperature environment is fundamentally inhibited, long-term stability of the electrical property of the electrode is ensured, and meanwhile, due to the fact that the thickness of the copper layer is 150-250 nm, excellent conductivity is provided, and low square resistance is achieved; the latticed structure maintains high light transmittance of the electrode while ensuring a high conductive path. Finally, the structure has excellent oxidation resistance, high light transmittance, low sheet resistance and flexible stability under the support of a flexible transparent substrate with the thickness of 50-200 [mu] m, and meets the harsh requirements of a new generation of flexible optoelectronic devices on electrode performance.

The invention discloses a dynamic optimization method and system for a boron diffusion process of a photovoltaic cell and electronic equipment. Comprising the following steps: collecting process parameters and sheet resistance data, and associating the process parameters and the sheet resistance data to form a process parameter set; optimizing a process parameter set, removing noise data and incomplete data, and extracting an available feature data set; dividing the feature data set into a training set and a verification set, and training to obtain a nonlinear regression model for predicting resistance data under different feature data; carrying out validity verification on the nonlinear regression model, and constructing an optimization function to reduce a difference value between a predicted value and an actual value; and deploying a nonlinear regression model in the diffusion process, adjusting the process parameters of the diffusion process in real time according to the predicted value, and optimizing the obtained sheet resistance data. The problem that the boron diffusion process is difficult to accurately adjust by a traditional process control method can be solved.

The application relates to the technical field of display panels, and discloses a display panel, a display screen and electronic equipment. The CGL of the display panel comprises N-CGL, i-CGL and P-CGL which are stacked in sequence. The LUMO energy level of the organic material corresponding to the i-CGL is less than or equal to -3.5 eV, and the work function of the inorganic material corresponding to the i-CGL is greater than or equal to 3.5 eV. In particular, the Fermi energy level of the i-CGL is lower than that of the P-CGL host material, and the thickness of the i-CGL can be any value less than or equal to 15 nm (especially less than 5 nm). In this case, the charge generation capability of the N-CGL, the i-CGL and the P-CGL in the direction parallel to the thickness of the CGL is improved, the sheet resistance in the direction perpendicular to the thickness of the CGL is greater than 1 GΩ / Dia, the sub-pixel can realize high-efficiency and low-power-consumption light emission, the voltage value obtained by voltage division from the driving voltage of another sub-pixel is small, and the crosstalk between the sub-pixels is reduced or even eliminated.

The invention discloses a high-voltage bidirectional silicon controlled rectifier electrostatic protection device and a manufacturing method. The high-voltage bidirectional silicon controlled rectifier electrostatic protection device comprises a P-type substrate, a P-type well and a high-voltage N well, the emitter P + injection of a parasitic PNP triode and the emitter N + injection of a parasitic NPN triode in the P-type well are arranged alternately, so that the length of a transverse discharge path of the silicon controlled rectifier is reduced to the greatest extent, the square resistance of a PNPN positive feedback conduction path is greatly reduced, and the key problem that a symmetrical bidirectional silicon controlled rectifier structure cannot be effectively opened in a high-voltage window of more than 70V is solved; in addition, the layout can provide an additional parasitic NPN triode path for a silicon controlled rectifier path, the effective area of an emitter of the parasitic NPN triode and the proportion of the emitter in a silicon controlled rectifier loop are increased, and the current discharge capacity of the device is further improved. Therefore, reference can be provided for the structural design of the high-voltage symmetrical bidirectional silicon controlled rectifier electrostatic protection device, and the silicon controlled rectifier can be effectively applied to ESD protection of a high-voltage bidirectional port.

A unit cell of a metamaterial absorber may be an electromagnetic wave absorber for a 5.8 GHz band or 10 GHz band. The unit cell of the metamaterial absorber may include a first metal layer including at least one concentric circular ring-shaped conductor pattern, a first intermediate layer disposed on the lower surface of the first metal layer and composed of polyimide, a resistive layer disposed on the lower surface of the first intermediate layer, a second intermediate layer disposed on the lower surface of the resistive layer and composed of polyimide, and a second metal layer disposed on the lower surface of the second intermediate layer. The resistive layer may increase the operating bandwidth of an operating frequency. The thickness of the resistive layer may be 0.05 mm to 0.15 mm. The sheet resistance of the resistive layer may be 530 Ω·sq−1 to 550 Ω·sq−1.

The invention belongs to the field of optoelectronic materials, and provides a dielectric / metal / dielectric multilayer transparent electrode material which sequentially comprises a substrate, a dielectric layer 2, a metal layer and a dielectric layer 1, the material of the dielectric layer 2 comprises metal oxide doped zinc oxide a; the material of the dielectric layer 1 comprises metal oxide doped zinc oxide b; furthermore, the metal oxide doped zinc oxide a and the metal oxide doped zinc oxide b are respectively and independently selected from one or more of aluminum oxide doped zinc oxide and tin oxide doped zinc oxide. Correspondingly, the invention also provides a preparation method of the dielectric / metal / dielectric multilayer transparent electrode material. Compared with a conventional dielectric / metal / dielectric multilayer transparent electrode material, the dielectric / metal / dielectric multilayer transparent electrode material disclosed by the invention is obviously more stable in photoelectric property, and the sheet resistance stability of the dielectric / metal / dielectric multilayer transparent electrode material is obviously improved especially in a high-temperature and high-humidity environment.

Microbial activity can be mitigated or prevented by applying an antimicrobial article to an object to inhibit the transfer of microbial life from the object to anyone thereafter touching the object. The antimicrobial article has a non-electrically conductive substrate comprising first and second opposing surfaces; a catalytic ink disposed as a pattern on the first opposing surface, which catalytic ink pattern comprises multiple unconnected features; and a pattern of electrolessly plated copper metal of unconnected copper metal features that is disposed in registration with the catalytic ink pattern. This antimicrobial article exhibits a sheet resistivity of more than 1,000 ohms / □ as determined using a four-point probe and a source meter.

The invention discloses a honeycomb structure wave-absorbing composite material based on resistive films and a preparation method thereof. The honeycomb structure wave-absorbing composite material comprises a glass fiber board skin layer, a first resistive film layer, a first honeycomb dielectric layer, a second resistive film layer, a second honeycomb dielectric layer, a third resistive film layer and a metal backboard. All the layers are connected through a bonding layer. According to the honeycomb structure wave-absorbing composite material based on the resistive film and the preparation method thereof, the sheet resistance in the first resistive film layer, the second resistive film layer and the third resistive film layer is controllable and customizable, so that impedance matching can be regulated and controlled by regulating and controlling the sheet resistance gradient of the resistive film, the process parameters are more stable, the broadband (2-18GHz) wave-absorbing performance is good, and the application prospect is wide. The first honeycomb dielectric layer and the second honeycomb dielectric layer do not need secondary processing, so that the wave-absorbing performance is endowed, and the resistive film is easy to prepare; in addition, the wave-absorbing composite material prepared by the invention is thin in structural material thickness, light in weight, capable of effectively absorbing a wide frequency band and easy to process.

According to the manufacturing method, through a Roll to Roll continuous production mode, traditional 19 procedures are reduced to 12 procedures, the production speed is increased to 5 m / min, the dielectric constant of a composite PI film doped with nanometer aluminum oxide is smaller than or equal to 3.2 and is reduced by 15% compared with that of a traditional PI film, a micro-arc oxidation insulating layer of copper / magnesium alloy foil is combined, the signal loss of the antenna in the frequency band of 28-300 GHz is reduced by 30%, and the antenna performance is improved. The sheet resistance of the graphene / silver nanowire composite conductive adhesive is smaller than or equal to 0.1 omega / sq, the bending life is larger than or equal to 100,000 times, the performance is improved by 10 times compared with that of traditional silver paste, the long-term dynamic use requirement of wearable equipment is met, no chemical etching liquid is used in the whole process, waste is subjected to magnetic separation and low-temperature pyrolysis, waste discharge is reduced by 90% compared with a traditional process, and the graphene / silver nanowire composite conductive adhesive is environmentally friendly. The carbon-based particles generated through pyrolysis meet the RoHS standard and can be directly used for 3D printing consumables, the antenna produced through the method can adapt to the leading-edge fields of 6G base stations, flexible intelligent watches, implantable medical sensors and the like, and the technology of the Internet of Things and high-frequency communication is promoted.

The invention relates to a preparation method of a visible and near-infrared dual-band high-transmittance transparent conductive film, which is characterized by comprising the following steps of: (1) preparing an ITO (Indium Tin Oxide) film on a transparent substrate by adopting a magnetron sputtering process, and sputtering and depositing the ITO film with the thickness of 200-1000nm; and (2) placing the substrate on which the ITO film is deposited in a high-temperature furnace for rapid heating heat treatment, and cooling after heat treatment. The preparation method has the advantages that the preparation method is simple, and rapid batch production can be realized in combination with an existing magnetron sputtering system; the average transmittance of the transparent conductive thin film prepared by the method reaches 70%-75.1% at the wave band of 1.1-2.5 microns, the average transmittance of the visible light wave band is not lower than 84%, and the sheet resistance is 20-35 omega / sq.

The invention discloses weldable low-temperature sintered silver paste which is prepared by mixing 65-90 parts of micro-nano silver powder, 10-20 parts of metal salt additive, 1-5 parts of polymer additive, 15-19 parts of organic solvent and 1-5 parts of organic additive, the micro-nano silver powder is obtained by mixing nano silver powder with the particle size of 10-50nm and micron silver powder with the particle size of 1-10mu m, and a preparation method comprises the following steps: step 1, preparing a first-stage polymer carrier; the preparation method comprises the following steps: 1, preparing a first-stage polymer carrier, 2, preparing a second-stage polymer carrier, 3, pretreating micro-nano silver powder, and 4, preparing conductive silver paste. Through micro-nano silver powder grading, nano-particles are filled in gaps of micro-particles, the stacking density is improved, the sheet resistance is reduced, an oxidation film is formed on the surface of the passivated micro-nano silver powder, the interface bonding strength can be effectively improved, the sintering activation energy of silver is reduced by the metal salt additive, and by combining the'etching-remelting 'effect of the oxidation film on the surface of the silver powder, the bonding strength of the surface of the silver powder is improved. The sintering temperature is effectively reduced.

A back-contact cell and a preparation method therefor, and a cell module, which belong to the technical field of back-contact cells. The back-contact cell comprises: a silicon wafer, which has a front surface and a back surface; and first semiconductor layers and second semiconductor layers, which are disposed on the back surface and are alternately arranged in the Y-axis direction of the silicon wafer. The back-contact cell further comprises a silicon alloy layer and a metal conductive layer, which are sequentially disposed outwards in the Z-axis direction of the silicon wafer, wherein the silicon alloy layer is disposed on the outer surfaces of the second semiconductor layers and extends to the outer surfaces of adjacent first doped silicon crystal layers; and the sheet resistance of the silicon alloy layer is 60-100 Ω / □, and the sheet resistance of the metal conductive layer is 3-50 Ω / □. In the back-contact cell, it is unnecessary to additionally provide a transparent conductive film layer, fingers and busbars, and the manufacture procedure is simpler; in addition, the use of expensive low-temperature silver paste and transparent conductive film layers is not required, thereby significantly reducing the production costs of the cell, and also ensuring excellent cell conversion efficiency.

The invention provides a preparation method of a doped polycrystalline silicon layer and a preparation method and application of a TBC battery, and relates to the technical field of solar cells, and the preparation method comprises the following steps: depositing the doped polycrystalline silicon layer on a tunneling oxide layer, and then annealing; wherein deposition of the doped polycrystalline silicon layer and annealing serve as one procedure, the process of preparing the doped polycrystalline silicon layer comprises at least two procedures, the annealing temperature in each procedure is lower than the deposition temperature, and the deposition temperatures in the adjacent procedures are decreased progressively. And the cell conversion efficiency is improved.

The invention provides a porous composite current collector and a preparation method thereof, the porous composite current collector comprises a base film layer and a conductive layer arranged on the surface of the base film layer, the conductive layer comprises a conductive material, the base film layer comprises a high-molecular polymer, the base film layer is provided with a plurality of through holes, and the through holes are communicated with the conductive material. And a blocking part for preventing magnetron sputtering pollution is arranged in the through hole. By effectively optimizing the composition and the preparation process of the porous composite current collector, the sheet resistance of the porous composite current collector is reduced, and the situation that a conductive material is hit onto a sputtering back roller through vertical holes to cause back roller pollution is avoided, so that the porous composite current collector has high conductivity and high compression strength, and the binding force of a conductive layer and a base film layer is improved.

The invention belongs to the technical field of organic functional materials and organic electronics, and particularly relates to a modified stretchable electrode and a preparation method and application thereof. Silver nanowire dispersion liquid is spin-coated on a substrate, an obtained silver nanowire film is patterned, the obtained patterned silver nanowire film is soaked in a modifier (a small molecule compound containing a group capable of being combined with silver and a hydrogen supply group) for modification, the upper portion of the obtained modified silver nanowire film is coated with an organic polymer solution, and after annealing, the silver nanowire film is obtained. And stripping from the substrate to obtain the modified stretchable electrode. Through the interaction between the modified and enhanced silver nanowire film and the organic polymer, the tensile property is improved, the situation that the sheet resistance of the modified stretchable electrode is increased due to breakage of the silver nanowires is avoided, and the modified stretchable electrode has high conductivity, high transparency and high fatigue resistance at the same time.

The invention provides a solar cell and a preparation method thereof, and a photovoltaic module, the solar cell comprises a silicon substrate, and the back surface of the silicon substrate comprises first doped regions and second doped regions which are alternately arranged along the horizontal direction of the silicon substrate; the first doped region corresponds to the P-type doped layer, the doping concentration of the first doped region is 1 * 10 < 15 > atom / cm < 3 > to 1 * 10 < 18 > atom / cm < 3 >, and the sheet resistance is 500-2000 omega / sq; the second doped region corresponds to the N-type doped layer, the doping concentration of the second doped region is 1 * 10 < 15 > atom / cm < 3 > to 1 * 10 < 18 > atom / cm < 3 >, and the sheet resistance is 500-2000 omega / sq; and the first passivation layer is positioned on the surfaces of the P-type doped layer and the N-type doped layer. The first doped region and the second doped region have the characteristics of low doping concentration and high sheet resistance, so that the photoelectric conversion efficiency of the solar cell is improved.

The invention belongs to the technical field of lithium ion batteries, and particularly relates to a preparation method of graphite-silicon mixed negative electrode slurry, a negative electrode plate and a lithium ion battery. Comprising the following steps: firstly, adding a polyacrylic acid PAA glue solution, conductive agent slurry and conductive agent powder into a pulping machine, and quickly stirring to obtain conductive adhesive slurry; then adding silicon powder into the obtained conductive adhesive slurry, and rapidly stirring to obtain silicon slurry; adding the graphite powder into another pulping machine, slowly stirring for a short time, adding a sodium carboxymethyl cellulose (CMC) glue solution and water, slowly stirring for a long time, and adjusting the solid content of the slurry to 62-68% to obtain graphite slurry; and adding the silicon slurry into the obtained graphite slurry in three times, and adding water to adjust the solid content of the slurry to be 45-55%. And finally, adding a styrene butadiene rubber SBR emulsion into the obtained slurry, slowly stirring, vacuumizing and sieving to obtain the final slurry. According to the preparation method of the slurry, the dispersion uniformity of silicon in graphite can be effectively improved, the volume expansion in the silicon circulation process is inhibited, the connection of the conductive agent and the silicon particles is promoted and the silicon conductivity is improved through the hydrogen bond bonding between the polyacrylic acid PAA with strong bonding force and the silicon particles, so that the resistance of a pole piece is reduced, and the cycle performance of the whole battery is improved.

A method for forming a coating on a substrate formed from zinc sulfide (ZnS) is provided. A ZnS film is grown on the substrate with a radio frequency sputtering process and metal dopants are sputtered on the substrate with a high-power impulse magnetron sputtering process. The metal dopants can be molybdenum or tungsten and simultaneously sputtered while growing the ZnS film. The sputtering ionizes the coating where the coating has a sheet resistance that is less than 50 ohm / square and the metal dopants form n-type dopants in the ZnS film. The metal dopants can be formed at a concentration that varies with a thickness of the ZnS film. At a first thickness, the concentration is at a first concentration and at a second thickness greater than the first thickness, the concentration is at a second concentration less than the first concentration.

The invention relates to the technical field of lithium battery materials, in particular to a composite current collector with a local enhanced welding area and a preparation method thereof.The composite current collector with the local enhanced welding area comprises a composite current collector body, and a through hole is formed in a preset welding area of the composite current collector body; a metal foil is attached to a preset welding area of the composite current collector body and is used for being welded with a tab, and the metal foil covers the through hole. According to the technical scheme provided by the invention, the through holes are formed in the tab preset welding area of the composite current collector to form a microscopic exhaust channel, so that an escape path is provided for gas generated in the welding process, and the compactness and firmness of a welding interface are ensured; by increasing the effective conductive thickness of the predetermined welding area, the sheet resistance and contact resistance of the area are significantly reduced.

The invention provides a composite sodium ferric sulfate positive electrode material and a preparation method thereof, a sodium ion battery positive plate and a sodium ion battery, and relates to the technical field of batteries. According to the preparation method of the composite sodium ferric sulfate positive electrode material, boron is doped in the preparation process of the conductive agent, so that the conductivity of the conductive agent can be improved, and the dosage of the conductive agent is reduced; the conductive agent is added in the preparation process of the positive electrode material, so that the dispersion uniformity of the conductive agent can be improved; through high-temperature sintering, the contact between the conductive agent and the active material is firmer, and the dry-method pole piece prepared from the material has lower pole piece resistance.

The utility model relates to the technical field of photovoltaic cell production, in particular to an auxiliary heating mechanism and a diffusion furnace, the auxiliary heating mechanism comprises a silicon carbide paddle and a plurality of heating pieces wound on the surface of the silicon carbide paddle, the surface of each heating piece is provided with a heat conduction coating, and the heat conduction coatings are arranged on the surface of the silicon carbide paddle. The heating piece comprises a heating wire and a heat dissipation structure wrapping the surface of the heating wire. According to the utility model, the wound heating wire is additionally arranged on the silicon carbide paddle in the furnace body shell to assist in heating, so that non-uniform temperature distribution caused by the fact that the silicon carbide paddle is made of opaque materials and hinders heat radiation is compensated, and non-uniform sheet resistance of a silicon wafer in an area shielded by the silicon carbide paddle structure is reduced.

The invention relates to the technical field of thick-film resistors, and discloses a high-sheet-resistance resistor paste, a preparation method thereof and a thick-film circuit. The resistance paste comprises 6%-24% of a composite conductive phase, 33%-57% of an inorganic binding phase, 2%-6% of a modifier and 22%-38% of an organic carrier. The conductive phase comprises nano-scale / submicron-scale ruthenium dioxide powder and submicron-scale flake silver powder, and the conductivity and the stability are cooperatively guaranteed. According to the preparation method, a secondary dispersing and grinding process is adopted, and a finished product is obtained through coarse grinding, vacuumizing fine grinding and 800-mesh filtering. The thick film circuit adopts an N-group parallel architecture, so that the use amount of conductive phases can be greatly reduced. The problem that traditional slurry is poor in stability under high sheet resistance is solved, TCR is smaller than or equal to 100 ppm / DEG C, resistance precision is within + / -5%, temperature and humidity stability is excellent, cost is low, and the slurry is suitable for high-precision heating scenes such as a new energy automobile heating system.

The invention discloses a preparation method of a high-uniformity buried resistance copper foil, which comprises the following specific steps of: 1, selecting an ultra-low profile copper foil which is not subjected to surface treatment as a treatment material for later use; step 2, depositing a compact resistance layer and a copper seed layer on the low-roughness surface of the ultralow-profile copper foil by adopting a HiPIMS magnetron sputtering vacuum coating technology; and step 3, performing conventional roughening surface treatment on the copper seed layer surface. The ultra-low profile copper foil which is not subjected to surface treatment is introduced, and the low-roughness copper foil surface is directly connected with the resistance layer, so that the problem of poor sheet resistance uniformity of the copper foil caused by non-uniform roughness of the copper foil due to a surface treatment process is solved. And meanwhile, a HiPIMS magnetron sputtering vacuum coating technology is introduced to prepare the resistance layer and the copper seed layer, so that the film adhesion of the resistance layer on a low-roughness surface is guaranteed.

The invention relates to a buried resistor copper foil, a production method thereof and a copper-clad plate. The buried resistor copper foil sequentially comprises a conductive layer, a transition layer and a resistive layer, the concentration of the metal oxide in the resistive layer and the resistivity of the resistive layer change along with the thickness of the resistive layer and are distributed in a gradient mode in the direction away from the transition layer. The resistivity of the resistive layer can be changed along with the thickness, and the sheet resistance value of the resistive layer can be kept relatively stable even during over-etching; meanwhile, due to the introduction of the transition layer, the corrosion resistance of the resistance layer is improved, migration and diffusion of elements in a high-temperature environment are inhibited, the stability of the sheet resistance value is further ensured, downstream PCB processing is facilitated, and the application prospect is good.

The invention belongs to the technical field of photoelectric devices, and particularly relates to a composite electrode, a preparation method thereof and a photoelectric device. The preparation method of the composite electrode comprises the following steps: forming a first seed layer by adopting an atomic layer deposition method; and depositing a conductive layer on the first seed layer to obtain the composite electrode. The conductive layer of the composite electrode is good in continuity, high in transmittance and low in sheet resistance.

The application discloses a physical vapor deposition device, an electrochromic device and a preparation method thereof, and relates to the technical field of electrochromic devices. The preparation method comprises the following steps: sputtering and depositing an electrochromic layer of WO3 on the surface of a first ITO layer, and the oxygen content is any value in the range of 42.5% to 52.5%; sputtering and depositing a pre-set thickness of a tungsten oxide ion conduction layer on the electrochromic layer, and the oxygen content of the corresponding chamber is any value in the range of 35% to 45%; sputtering and depositing an ion storage layer containing lithium ions on the ion conduction layer; depositing a second ITO layer on the ion storage layer, and obtaining the electrochromic device after vacuum annealing treatment and cooling treatment; wherein the deposition temperature of the second ITO layer is any value in the range of 350 DEG C to 400 DEG C, and the annealing temperature of the vacuum annealing treatment is any value in the range of 450 DEG C to 500 DEG C. The electrochromic device prepared by the application has the characteristics of high transmittance and low sheet resistance.

The invention discloses a printing tungsten paste for an HTCC ceramic matrix. The printing tungsten paste comprises the following basic materials in percentage by mass: 78-82% of tungsten powder, 4-8% of aluminum oxide ceramic powder and 14-18% of an organic carrier; the mass of the iron-nickel powder accounts for 0.5-5% of the mass of the base material, and the mass of the hydrogenated castor oil accounts for 0.3-0.6% of the mass of the base material. The invention also discloses a preparation method of the printing tungsten paste for the HTCC ceramic matrix. The method is characterized in that the iron-nickel powder is introduced into the tungsten slurry, iron and nickel belong to transition metal and construct a d10 configuration with tungsten metal, sintering activation energy among tungsten particles can be reduced, activated sintering occurs, iron and nickel serve as a'bridge 'for tungsten atom transmission, and therefore the sintering temperature and sheet resistance of a film layer can be reduced at the same time; and meanwhile, energy loss and conductor loss are reduced.

The invention belongs to the technical field of flexible sensing, and particularly relates to a tensile transparent resistive sensor and a preparation method thereof. The sensor is composed of an elastic substrate and gradient conductive layers, the conductive layers I and II are metal nanowire grids, the conductive layer III is a PEDOT: PSS / metal nanowire composite layer, the three layers form a gradient conductive network on the rigid substrate through a layer-by-layer coating process, and then the gradient conductive network is integrally transferred to the surface of the elastic substrate through a freezing auxiliary transfer printing technology. And forming an interlayer interpenetrating stretchable transparent conductive structure. After the structure is circularly stretched for 100 times under 50% strain, the resistance change rate is less than or equal to 7%, the light transmittance at 550 nm is more than or equal to 85%, the sheet resistance is as low as 16 omega / sq, and the structure has high sensitivity (the detection limit is less than or equal to 5% strain), high light transmittance and excellent cycle stability. The preparation method adopts an all-solution process, is low in cost, can realize large-area preparation, and is suitable for the fields of wearable electronics, health monitoring, human-computer interaction and the like.

To provide a wiring body and a display device capable of reducing sheet resistance, while improving the flatness of the wiring body.SOLUTION: According to a wiring body 200, a mesh-like conductor layer 5 provided on a light-transmissive substrate 1 is covered with a multilayer resin layer 9 composed of a first resin layer 7 and a second resin layer 8. As a result, any unevenness that may occur on the surface of the wiring body 200 due to the conductor layer 5 can be absorbed by the resin layer 9. Therefore, the flatness of the surface of the wiring body 200 can be improved. In the embodiment, an upper surface 8a of the second resin layer 8 constitutes the surface of the wiring body 200. Furthermore, the conductor layer 5 penetrates the first resin layer 7 on the light-transmissive substrate 1 side. As a result, it is possible to ensure the volume of the conductor while suppressing the thickness of conductor lines 50 of the conductor layer 5. Therefore, the sheet resistance of the wiring body 200 can be reduced. Thus, the flatness of the wiring body 200 can be improved while reducing the sheet resistance.SELECTED DRAWING: Figure 6