252 results about "Sheet resistance" patented technology

The invention relates to the technical field of flexible transparent electrodes, in particular to a Cu / Al laminated metal grid flexible transparent electrode and a preparation method thereof. The Cu / Al laminated metal grid flexible transparent electrode comprises a flexible substrate, a copper layer arranged on the flexible substrate and an aluminum layer arranged on the copper layer, and the aluminum layer located on the outer layer spontaneously forms an Al2O3 passivation layer with the thickness of 2-5 nm in air. The Al2O3 passivation layer can effectively prevent oxygen and moisture from permeating inwards, so that oxidation of the copper layer in a humid or high-temperature environment is fundamentally inhibited, long-term stability of the electrical property of the electrode is ensured, and meanwhile, due to the fact that the thickness of the copper layer is 150-250 nm, excellent conductivity is provided, and low square resistance is achieved; the latticed structure maintains high light transmittance of the electrode while ensuring a high conductive path. Finally, the structure has excellent oxidation resistance, high light transmittance, low sheet resistance and flexible stability under the support of a flexible transparent substrate with the thickness of 50-200 [mu] m, and meets the harsh requirements of a new generation of flexible optoelectronic devices on electrode performance.

The application relates to the technical field of display panels, and discloses a display panel, a display screen and electronic equipment. The CGL of the display panel comprises N-CGL, i-CGL and P-CGL which are stacked in sequence. The LUMO energy level of the organic material corresponding to the i-CGL is less than or equal to -3.5 eV, and the work function of the inorganic material corresponding to the i-CGL is greater than or equal to 3.5 eV. In particular, the Fermi energy level of the i-CGL is lower than that of the P-CGL host material, and the thickness of the i-CGL can be any value less than or equal to 15 nm (especially less than 5 nm). In this case, the charge generation capability of the N-CGL, the i-CGL and the P-CGL in the direction parallel to the thickness of the CGL is improved, the sheet resistance in the direction perpendicular to the thickness of the CGL is greater than 1 GΩ / Dia, the sub-pixel can realize high-efficiency and low-power-consumption light emission, the voltage value obtained by voltage division from the driving voltage of another sub-pixel is small, and the crosstalk between the sub-pixels is reduced or even eliminated.

The invention discloses a high-voltage bidirectional silicon controlled rectifier electrostatic protection device and a manufacturing method. The high-voltage bidirectional silicon controlled rectifier electrostatic protection device comprises a P-type substrate, a P-type well and a high-voltage N well, the emitter P + injection of a parasitic PNP triode and the emitter N + injection of a parasitic NPN triode in the P-type well are arranged alternately, so that the length of a transverse discharge path of the silicon controlled rectifier is reduced to the greatest extent, the square resistance of a PNPN positive feedback conduction path is greatly reduced, and the key problem that a symmetrical bidirectional silicon controlled rectifier structure cannot be effectively opened in a high-voltage window of more than 70V is solved; in addition, the layout can provide an additional parasitic NPN triode path for a silicon controlled rectifier path, the effective area of an emitter of the parasitic NPN triode and the proportion of the emitter in a silicon controlled rectifier loop are increased, and the current discharge capacity of the device is further improved. Therefore, reference can be provided for the structural design of the high-voltage symmetrical bidirectional silicon controlled rectifier electrostatic protection device, and the silicon controlled rectifier can be effectively applied to ESD protection of a high-voltage bidirectional port.

The invention provides a porous composite current collector and a preparation method thereof, the porous composite current collector comprises a base film layer and a conductive layer arranged on the surface of the base film layer, the conductive layer comprises a conductive material, the base film layer comprises a high-molecular polymer, the base film layer is provided with a plurality of through holes, and the through holes are communicated with the conductive material. And a blocking part for preventing magnetron sputtering pollution is arranged in the through hole. By effectively optimizing the composition and the preparation process of the porous composite current collector, the sheet resistance of the porous composite current collector is reduced, and the situation that a conductive material is hit onto a sputtering back roller through vertical holes to cause back roller pollution is avoided, so that the porous composite current collector has high conductivity and high compression strength, and the binding force of a conductive layer and a base film layer is improved.

The invention relates to the technical field of lithium battery materials, in particular to a composite current collector with a local enhanced welding area and a preparation method thereof.The composite current collector with the local enhanced welding area comprises a composite current collector body, and a through hole is formed in a preset welding area of the composite current collector body; a metal foil is attached to a preset welding area of the composite current collector body and is used for being welded with a tab, and the metal foil covers the through hole. According to the technical scheme provided by the invention, the through holes are formed in the tab preset welding area of the composite current collector to form a microscopic exhaust channel, so that an escape path is provided for gas generated in the welding process, and the compactness and firmness of a welding interface are ensured; by increasing the effective conductive thickness of the predetermined welding area, the sheet resistance and contact resistance of the area are significantly reduced.

The invention provides a composite sodium ferric sulfate positive electrode material and a preparation method thereof, a sodium ion battery positive plate and a sodium ion battery, and relates to the technical field of batteries. According to the preparation method of the composite sodium ferric sulfate positive electrode material, boron is doped in the preparation process of the conductive agent, so that the conductivity of the conductive agent can be improved, and the dosage of the conductive agent is reduced; the conductive agent is added in the preparation process of the positive electrode material, so that the dispersion uniformity of the conductive agent can be improved; through high-temperature sintering, the contact between the conductive agent and the active material is firmer, and the dry-method pole piece prepared from the material has lower pole piece resistance.

The invention relates to the technical field of thick-film resistors, and discloses a high-sheet-resistance resistor paste, a preparation method thereof and a thick-film circuit. The resistance paste comprises 6%-24% of a composite conductive phase, 33%-57% of an inorganic binding phase, 2%-6% of a modifier and 22%-38% of an organic carrier. The conductive phase comprises nano-scale / submicron-scale ruthenium dioxide powder and submicron-scale flake silver powder, and the conductivity and the stability are cooperatively guaranteed. According to the preparation method, a secondary dispersing and grinding process is adopted, and a finished product is obtained through coarse grinding, vacuumizing fine grinding and 800-mesh filtering. The thick film circuit adopts an N-group parallel architecture, so that the use amount of conductive phases can be greatly reduced. The problem that traditional slurry is poor in stability under high sheet resistance is solved, TCR is smaller than or equal to 100 ppm / DEG C, resistance precision is within + / -5%, temperature and humidity stability is excellent, cost is low, and the slurry is suitable for high-precision heating scenes such as a new energy automobile heating system.

The application discloses a physical vapor deposition device, an electrochromic device and a preparation method thereof, and relates to the technical field of electrochromic devices. The preparation method comprises the following steps: sputtering and depositing an electrochromic layer of WO3 on the surface of a first ITO layer, and the oxygen content is any value in the range of 42.5% to 52.5%; sputtering and depositing a pre-set thickness of a tungsten oxide ion conduction layer on the electrochromic layer, and the oxygen content of the corresponding chamber is any value in the range of 35% to 45%; sputtering and depositing an ion storage layer containing lithium ions on the ion conduction layer; depositing a second ITO layer on the ion storage layer, and obtaining the electrochromic device after vacuum annealing treatment and cooling treatment; wherein the deposition temperature of the second ITO layer is any value in the range of 350 DEG C to 400 DEG C, and the annealing temperature of the vacuum annealing treatment is any value in the range of 450 DEG C to 500 DEG C. The electrochromic device prepared by the application has the characteristics of high transmittance and low sheet resistance.

The invention belongs to the technical field of flexible sensing, and particularly relates to a tensile transparent resistive sensor and a preparation method thereof. The sensor is composed of an elastic substrate and gradient conductive layers, the conductive layers I and II are metal nanowire grids, the conductive layer III is a PEDOT: PSS / metal nanowire composite layer, the three layers form a gradient conductive network on the rigid substrate through a layer-by-layer coating process, and then the gradient conductive network is integrally transferred to the surface of the elastic substrate through a freezing auxiliary transfer printing technology. And forming an interlayer interpenetrating stretchable transparent conductive structure. After the structure is circularly stretched for 100 times under 50% strain, the resistance change rate is less than or equal to 7%, the light transmittance at 550 nm is more than or equal to 85%, the sheet resistance is as low as 16 omega / sq, and the structure has high sensitivity (the detection limit is less than or equal to 5% strain), high light transmittance and excellent cycle stability. The preparation method adopts an all-solution process, is low in cost, can realize large-area preparation, and is suitable for the fields of wearable electronics, health monitoring, human-computer interaction and the like.

The invention provides a method for detecting the accuracy of ion implantation energy, and the method comprises the following steps: providing a semiconductor substrate, and forming a reference well layer on the semiconductor substrate, the reference well layer having a first conductive type; ion implantation equipment is adopted to carry out an ion implantation technology, a detection well layer is formed on the reference well layer, the detection well layer has a second conduction type, a plurality of detection structures are formed by changing the implantation energy of the ion implantation technology, and the detection well layers of the detection structures have different ion implantation depths; measuring the square resistance of each detection structure; establishing an energy-square resistance curve of the ion implantation process of the ion implantation equipment based on a mapping relation between different implantation energies and corresponding square resistances; obtaining a standard energy-square resistance value relation based on a standard ion implantation device; and according to the energy-square resistance curve of the ion implantation technology and the standard energy-square resistance value relationship, determining the energy deviation of the ion implantation equipment at the specific implantation energy.

The application provides a semiconductor process equipment control method and a semiconductor process equipment; in the semiconductor process equipment control method, when the deposition process chamber is idle for a long time, the target material cleaning process is performed on the deposition process chamber, the wafer is pretreated in the degassing process chamber, and after the pretreatment process and the target material cleaning process are completed, the deposition process is performed on the pretreated wafer in the deposition process chamber, so that the pretreated wafer can enter the deposition process chamber for process processing under the condition of low thermal energy loss after the target material cleaning process is completed, thereby not only reducing the temperature loss of the pretreated wafer before process processing, effectively reducing the resistance change caused by the idle effect of the deposition process chamber, improving the stability of the sheet resistance of the thin film, but also improving the production capacity of the semiconductor process equipment.

The purpose of this invention is to disclose a silicon wafer boron expansion process data characterization system, including a boron expansion process data module and a sheet resistance data module. The data collected by the boron expansion process data module and the data collected by the sheet resistance data module are matched using timestamps, boron expansion equipment IDs, furnace tube IDs, and graphite boat IDs. The beneficial effects of this invention are: by accurately matching the data collected by the boron expansion process data module and the sheet resistance data module using timestamps, boron expansion equipment IDs, furnace tube IDs, and graphite boat IDs, on the one hand, it ensures that the data collected by each sheet resistance data module accurately corresponds to the data collected by the boron expansion process data module, accurately reflecting the adaptability of the data collected by the boron expansion process data module and facilitating timely adjustments to the boron expansion process; on the other hand, it facilitates big data processing of the data collected by the boron expansion process data module and the sheet resistance data module.

A main semiconductor device element and a temperature sensing section for sensing the temperature of the main semiconductor device element are provided on a semiconductor substrate containing SiC. The temperature sensing section (10) is a lateral pn-junction diode formed in a polysilicon layer (3) and provided on a front surface of a semiconductor substrate (101) by means of an interlayer insulating film (9). A p-type anode region (1) of the temperature sensing section (10) is formed by ion implantation of B or In into the polysilicon layer (3). The temperature sensing section and an n-type cathode region are formed by ion implantation of P or Sb into the polysilicon layer. The sheet resistance of the p-type anode region (1) at 25 °C is not less than 50 Ω / □ but not more than 170 Ω / □.The n-type cathode region (2) exhibits a surface resistance of not less than 80 Ω / □ but not more than 400 Ω / □ at 25 °C. Thus, the temperature sensing accuracy of the temperature sensing section (10) can be improved.

The invention discloses a standard cell library with various square resistance values, a manufacturing method and application thereof, and the manufacturing method comprises the following steps: designing a layout containing a plurality of standard cells, each standard cell being a minimum complete structure capable of independently reflecting a specific square resistance value, the layout comprises patterns of two metal silicide barrier layers arranged on the polycrystalline silicon surfaces of the standard units and a distance between the two metal silicide barrier layers, the distance is used for controlling the generation area of metal silicide, and the square resistance value of each standard unit is adjusted by adjusting the distance; a plurality of standard units are manufactured based on the layout, and the standard units form a standard unit library. On the premise of keeping the absolute advantages of simple process and low cost, the invention provides a standard cell library with various square resistance values, successfully realizes the manufacturing and flexible adjustment of the polycrystalline silicon resistor, and has extremely high application value.

This invention belongs to the field of conductor materials technology, and relates to a conductor paste for LED chip packaging and its preparation method. The invention provides a method for preparing a conductor paste, comprising: mixing copper powder and deionized water at a mass ratio of 1:5 to 1:7, dispersing evenly, adding triallyl citrate and sodium glyoxylate, and heating at 55-60°C for 1-2 hours; then adding γ-methacryloyloxypropyltrimethoxysilane and heating at 45-50°C for 1-2 hours; finally, vacuum drying to obtain antioxidant copper powder; and mixing the antioxidant copper powder, resin binder, solvent, and additives evenly to obtain the conductor paste. The conductor paste provided by this invention has excellent conductivity, good adhesion to LED chip substrates, and is not easily oxidized at high temperatures. This invention solves the technical problem of excessive sheet resistance in conductor pastes obtained by coating copper powder with γ-methacryloyloxypropyltrimethoxysilane to improve its antioxidant properties.

The invention discloses physical vapor deposition equipment, an electrochromic device and a preparation method of the electrochromic device, and relates to the technical field of electrochromic devices. The preparation method comprises the following steps: sputtering and depositing the WO3 electrochromic layer on the surface of the first ITO layer, wherein the oxygen content is any one of 42.5-52.5%; sputtering and depositing a tungsten oxide ion conducting layer with a preset thickness on the electrochromic layer, wherein the oxygen content of the corresponding chamber is any one of 35%-45%; sputtering and depositing an ion storage layer containing lithium ions on the ion conduction layer; a second ITO layer is deposited on the ion storage layer, and the electrochromic device is prepared after vacuum annealing treatment and cooling treatment; wherein the deposition temperature of the second ITO layer is any one value from 350 DEG C to 400 DEG C, and the annealing temperature of the vacuum annealing treatment is any one value from 450 DEG C to 500 DEG C. The electrochromic device prepared by the invention has the characteristics of high transmittance and low sheet resistance.

This invention discloses a sheet resistance testing unit and structure, belonging to the field of semiconductor technology. The sheet resistance testing unit includes a first resistor, formed by the length and width of a layout design; and a second resistor with the same layout design dimensions as the first resistor, and an angle between the first and second resistors to achieve mutual resistance compensation. The second resistor is also connected to the first resistor via a connector to ensure that the current flow directions in the first resistor, the second resistor, and the connector are the same. By providing a first resistor and a second resistor with correspondingly equal layout dimensions and the same current direction, under the same process fluctuation conditions, the differential polarities of the first and second resistors are opposite, and the resulting resistance value deviations can be mutually compensated, effectively reducing the impact of active region process fluctuations on sheet resistance testing in small-size applications.

The utility model discloses a single crystal Topcon battery low pressure diffusion air inlet pipe, and relates to the technical field of low pressure diffusion air inlet pipes, the single crystal Topcon battery low pressure diffusion air inlet pipe comprises a built-in pipe and an outer sleeve, one end of the built-in pipe is an air inlet end and is located in the middle of the outer sleeve, and the outer side line of the air inlet end extends to be closed with the outer sleeve and is a closed side; the other end of the built-in pipe is closed with the closed end of the outer sleeve, and is communicated with an inner air hole and an exhaust hole I which are laterally formed respectively; a plurality of groups of inner air holes are uniformly distributed on the built-in pipe, and a plurality of inner air holes in each group are circumferentially distributed along the central axis of the built-in pipe in a surrounding manner; a first exhaust hole, a second exhaust hole and a third exhaust hole are respectively formed in the outer sleeve, and the hole diameter in the direction from the air inlet end of the built-in pipe to the closed end is gradually increased, so that the technical problem that in the prior art, due to the fact that a single air outlet in the diffusion furnace causes different doping concentrations of silicon wafers at different positions in the pipe, the sheet resistance uniformity is poor is solved.

The invention belongs to the technical field of heat-not-burn, and relates to a heat-not-burn conductive heating glass tube and a preparation method thereof. The length-diameter ratio of the conductive heating glass tube is not lower than 5: 1, the conductive heating glass tube comprises a glass base tube, a conductive heating layer and an anti-oxidation layer, the conductive heating layer and the anti-oxidation layer are arranged on the inner wall of the glass base tube, the conductive heating layer is located between the glass base tube and the anti-oxidation layer, the conductive heating layer and the glass base tube are connected through chemical binding force, the sheet resistance of the conductive heating layer is 0.1-100 omega / square, and the thickness of the anti-oxidation layer is 50-200 nm. The conductive heating glass tube provided by the invention has the characteristics of high heat utilization rate and rapid and stable temperature rise, can directly heat substances in the tube, reduces the loss in the heat transfer process, and has remarkable application advantages in the field of heating without combustion.

The application relates to a solar cell and a preparation method thereof, a laminated cell and a photovoltaic module. The preparation method of the solar cell comprises the following steps: providing a substrate, wherein the substrate comprises a first surface; performing boron diffusion on the first surface of the substrate to obtain a boron diffusion layer, wherein the boron diffusion comprises: performing first deposition on the first surface of the substrate, wherein the first deposition comprises a first constant-temperature section; performing second deposition on the first surface of the substrate, wherein the second deposition comprises a second temperature-rising section and a second constant-temperature section; and performing third deposition on the first surface of the substrate, wherein the third deposition comprises a third temperature-rising section and a third constant-temperature section; and the gas input in the first deposition, the second deposition and the third deposition all comprises a boron source. The preparation method is simple and easy to implement, and can effectively improve the uniformity of sheet resistance.

This invention belongs to the field of transparent conductive film technology, specifically relating to a flexible transparent conductive film with ordered silver nanowires and its preparation method. The preparation method includes the following steps: preparing AgNW conductive ink; coating a first layer of silver nanowires onto a substrate surface, and drying the resulting monolayer silver nanowire wet film; coating a second layer of silver nanowires onto the surface of the monolayer silver nanowire film along a coating direction perpendicular to the first coating; drying the resulting bilayer orthogonal silver nanowire wet film and then cold rolling it to obtain a flexible transparent conductive film with ordered silver nanowires. This flexible transparent conductive film with silver nanowires exhibits high light transmittance, low sheet resistance, and low surface roughness.

Disclosed is a display device that is capable of reducing the sheet resistance of an optical area cathode electrode by including a conductive material layer disposed on a common electrode in an optical area where an electronic device is disposed and a transparent electrode disposed on the conductive material layer.

The invention provides a security door which comprises a conductive coating, and the conductive coating is prepared from, by weight, 10-20 parts of conductive filler, 1-10 parts of film-forming agent, 1-10 parts of synthetic resin, 1-2 parts of plasticizer, 1-2 parts of organic solvent and 10-40 parts of diluent. And the sheet resistance of the conductive coating is less than or equal to 1000 omega / square. By adopting the security check door comprising the conductive coating and controlling the square resistance of the conductive coating within the application range, interference signals generated when a human body passes through the security check door in an empty manner can be remarkably reduced.

A conductive film (1) comprises a translucent substrate (2) and a first wiring (10) positioned on the substrate (2). The first wiring (10) has a conductive layer (11) and a metal layer (12) laminated on the conductive layer (11). The conductive layer (11) includes a first layer (11a) and a second layer (11b) laminated on the first layer (11a). The sheet resistance value of the second layer (11b) is smaller than the sheet resistance value of the first layer (11a).

The application discloses an ITO-free PEDOT-based polymer dispersed liquid crystal dimming film and a preparation method thereof, and belongs to the technical field of dimming films.The dimming film comprises a first transparent substrate, a first composite transparent conductive layer, a polymer dispersed liquid crystal layer, a second composite transparent conductive layer and a second transparent substrate, and is a five-layer symmetrical stacking structure.The application uses a covalent bond / coordination bond / chain entanglement multi-level interface combination to greatly improve the peeling strength; through the cooperation of a molecular brush elastic buffer layer and a conductive polymer coating layer, stress is uniformly dissipated, and the dimming film is endowed with excellent bending resistance; by using a sulfonate group to secondarily dope PEDOT, point contact between AgNW and the conductive layer is converted into surface contact, node resistance is reduced, silver corrosion is delayed, low sheet resistance and high stability are realized; by means of uniform wetting of a high hydrophilic molecular brush interface and a limited phase separation effect, the size and distribution of liquid crystal droplets are optimized, the driving voltage is reduced, and the open-state light transmittance and contrast are improved.

This application discloses a transparent conductive film, its preparation method, and electronic skin. It includes: a flexible substrate; an interface bonding layer connected to the flexible substrate; a patterned copper electrode layer connected to the interface bonding layer, the patterned copper electrode layer having a thickness of 2µm-5µm and including at least an integrally connected periodic grid structure and curved interconnect units. The grid line width of the periodic grid structure is 3µm-8µm, the grid spacing is 100µm-300µm, and the intersections of the grid lines of the periodic grid structure have rounded corner transition structures with a radius of 2µm-5µm. The curved interconnect units are arranged in a sinusoidal serpentine structure. A composite passivation layer connected to the patterned copper electrode layer; wherein the transparent conductive film, sequentially stacked with the flexible substrate, interface bonding layer, patterned copper electrode layer, and composite passivation layer, has a sheet resistance ≤0.5Ω / sq and a light transmittance ≥85%. This application improves the overall performance of the transparent conductive film.

The application discloses a glass powder for a TOPCon high-sheets-resistance battery positive surface fine grid paste suitable for a LECO process and a preparation method thereof, and the raw material composition comprises the following components in terms of molar percentage: PbO 9.5-14.5mol%, B2O3 49.0-59.0mol%, GeO2 1.2-4.2mol%, Al(OH)3 4.5-8.5mol%, BaO 4.2-7.8mol%, Nd2O3 0.3-0.9mol%, and BeO 18.0-25.0mol%. The application realizes the synergistic optimization of the reduction of the contact resistance and the improvement of the open-circuit voltage by precisely controlling the formula components and the proportion, mainly utilizing Al(OH)3 to optimize the contact performance and BeO to improve the open-circuit voltage, and is suitable for the performance requirement of the high-sheets-resistance TOPCon battery and guarantees the efficient and stable operation of the battery.

The invention relates to the technical field of conductive thin film materials, in particular to a preparation method and application of a pure-carbon-series self-supporting conductive thin film. Comprising the following steps: S1, uniformly stirring and mixing multi-walled carbon nanotube slurry, single-walled carbon nanotube slurry and graphene slurry, adding a film-forming agent oily solution, and uniformly mixing to obtain a coating material; s2, coating a substrate with the coating material in the S1, and then drying and stripping to obtain the pure-carbon-series self-supporting conductive thin film, the sheet resistance of the pure carbon system can reach 4.2 omega / square, and the sheet resistance of a thin film prepared in a general laboratory is less than 20 omega / square and is superior to that of an existing pure carbon film (generally gt and 20 omega / square), and the pure carbon film can be driven under the low voltage of 5V. Due to the characteristic, the deicing device is particularly suitable for the fields of flexible wearable equipment, consumer electronics, deicing in special environments and the like.

The invention provides a detection method and device of gravure aluminum foil for a battery and production equipment, and relates to the technical field of aluminum foil detection. The detection method comprises the following steps: acquiring reference parameters which comprise a chroma reference value and a sheet resistance reference value R0; the chromatic value of the gravure aluminum foil to be measured is measured, and the sheet resistance value R of the gravure aluminum foil to be measured is obtained through a preset chromatic sheet resistance relation model; based on the chromaticity reference value and the chromaticity value of the gravure aluminum foil to be measured, component deviation values (delta L, delta a and delta b) and a tolerance value delta E are obtained; and comparing the component deviation value and the tolerance value delta E with a preset component deviation threshold value, a preset tolerance threshold value range and a sheet resistance threshold value range, and if the component deviation value and the tolerance value delta E fall into the preset component deviation threshold value, the sheet resistance threshold value range and the preset tolerance threshold value range, judging that the gravure aluminum foil to be detected is qualified, otherwise, judging that the gravure aluminum foil to be detected is unqualified. According to the method, shutdown sampling is not needed, sample damage is not needed, and efficient and nondestructive detection is achieved.

The application discloses a glass powder for a TOPCon high-sheets-resistance battery positive surface fine grid paste suitable for a LECO process and a preparation method thereof, and the raw material composition comprises the following components in terms of molar percentage: PbO 9.5-14.5mol%, B2O3 49.0-59.0mol%, GeO2 1.2-4.2mol%, Al(OH)3 4.5-8.5mol%, BaO 4.2-7.8mol%, Nd2O3 0.3-0.9mol%, and BeO 18.0-25.0mol%. The application realizes the synergistic optimization of the reduction of the contact resistance and the improvement of the open-circuit voltage by precisely controlling the formula components and the proportion, mainly utilizing Al(OH)3 to optimize the contact performance and BeO to improve the open-circuit voltage, and is suitable for the performance requirement of the high-sheets-resistance TOPCon battery and guarantees the efficient and stable operation of the battery.