389 results about "Sheet resistance" patented technology

The invention relates to the technical field of flexible transparent electrodes, in particular to a Cu / Al laminated metal grid flexible transparent electrode and a preparation method thereof. The Cu / Al laminated metal grid flexible transparent electrode comprises a flexible substrate, a copper layer arranged on the flexible substrate and an aluminum layer arranged on the copper layer, and the aluminum layer located on the outer layer spontaneously forms an Al2O3 passivation layer with the thickness of 2-5 nm in air. The Al2O3 passivation layer can effectively prevent oxygen and moisture from permeating inwards, so that oxidation of the copper layer in a humid or high-temperature environment is fundamentally inhibited, long-term stability of the electrical property of the electrode is ensured, and meanwhile, due to the fact that the thickness of the copper layer is 150-250 nm, excellent conductivity is provided, and low square resistance is achieved; the latticed structure maintains high light transmittance of the electrode while ensuring a high conductive path. Finally, the structure has excellent oxidation resistance, high light transmittance, low sheet resistance and flexible stability under the support of a flexible transparent substrate with the thickness of 50-200 [mu] m, and meets the harsh requirements of a new generation of flexible optoelectronic devices on electrode performance.

The invention discloses a dynamic optimization method and system for a boron diffusion process of a photovoltaic cell and electronic equipment. Comprising the following steps: collecting process parameters and sheet resistance data, and associating the process parameters and the sheet resistance data to form a process parameter set; optimizing a process parameter set, removing noise data and incomplete data, and extracting an available feature data set; dividing the feature data set into a training set and a verification set, and training to obtain a nonlinear regression model for predicting resistance data under different feature data; carrying out validity verification on the nonlinear regression model, and constructing an optimization function to reduce a difference value between a predicted value and an actual value; and deploying a nonlinear regression model in the diffusion process, adjusting the process parameters of the diffusion process in real time according to the predicted value, and optimizing the obtained sheet resistance data. The problem that the boron diffusion process is difficult to accurately adjust by a traditional process control method can be solved.

The application relates to the technical field of display panels, and discloses a display panel, a display screen and electronic equipment. The CGL of the display panel comprises N-CGL, i-CGL and P-CGL which are stacked in sequence. The LUMO energy level of the organic material corresponding to the i-CGL is less than or equal to -3.5 eV, and the work function of the inorganic material corresponding to the i-CGL is greater than or equal to 3.5 eV. In particular, the Fermi energy level of the i-CGL is lower than that of the P-CGL host material, and the thickness of the i-CGL can be any value less than or equal to 15 nm (especially less than 5 nm). In this case, the charge generation capability of the N-CGL, the i-CGL and the P-CGL in the direction parallel to the thickness of the CGL is improved, the sheet resistance in the direction perpendicular to the thickness of the CGL is greater than 1 GΩ / Dia, the sub-pixel can realize high-efficiency and low-power-consumption light emission, the voltage value obtained by voltage division from the driving voltage of another sub-pixel is small, and the crosstalk between the sub-pixels is reduced or even eliminated.

The invention discloses a high-voltage bidirectional silicon controlled rectifier electrostatic protection device and a manufacturing method. The high-voltage bidirectional silicon controlled rectifier electrostatic protection device comprises a P-type substrate, a P-type well and a high-voltage N well, the emitter P + injection of a parasitic PNP triode and the emitter N + injection of a parasitic NPN triode in the P-type well are arranged alternately, so that the length of a transverse discharge path of the silicon controlled rectifier is reduced to the greatest extent, the square resistance of a PNPN positive feedback conduction path is greatly reduced, and the key problem that a symmetrical bidirectional silicon controlled rectifier structure cannot be effectively opened in a high-voltage window of more than 70V is solved; in addition, the layout can provide an additional parasitic NPN triode path for a silicon controlled rectifier path, the effective area of an emitter of the parasitic NPN triode and the proportion of the emitter in a silicon controlled rectifier loop are increased, and the current discharge capacity of the device is further improved. Therefore, reference can be provided for the structural design of the high-voltage symmetrical bidirectional silicon controlled rectifier electrostatic protection device, and the silicon controlled rectifier can be effectively applied to ESD protection of a high-voltage bidirectional port.

Microbial activity can be mitigated or prevented by applying an antimicrobial article to an object to inhibit the transfer of microbial life from the object to anyone thereafter touching the object. The antimicrobial article has a non-electrically conductive substrate comprising first and second opposing surfaces; a catalytic ink disposed as a pattern on the first opposing surface, which catalytic ink pattern comprises multiple unconnected features; and a pattern of electrolessly plated copper metal of unconnected copper metal features that is disposed in registration with the catalytic ink pattern. This antimicrobial article exhibits a sheet resistivity of more than 1,000 ohms / □ as determined using a four-point probe and a source meter.

The invention discloses a honeycomb structure wave-absorbing composite material based on resistive films and a preparation method thereof. The honeycomb structure wave-absorbing composite material comprises a glass fiber board skin layer, a first resistive film layer, a first honeycomb dielectric layer, a second resistive film layer, a second honeycomb dielectric layer, a third resistive film layer and a metal backboard. All the layers are connected through a bonding layer. According to the honeycomb structure wave-absorbing composite material based on the resistive film and the preparation method thereof, the sheet resistance in the first resistive film layer, the second resistive film layer and the third resistive film layer is controllable and customizable, so that impedance matching can be regulated and controlled by regulating and controlling the sheet resistance gradient of the resistive film, the process parameters are more stable, the broadband (2-18GHz) wave-absorbing performance is good, and the application prospect is wide. The first honeycomb dielectric layer and the second honeycomb dielectric layer do not need secondary processing, so that the wave-absorbing performance is endowed, and the resistive film is easy to prepare; in addition, the wave-absorbing composite material prepared by the invention is thin in structural material thickness, light in weight, capable of effectively absorbing a wide frequency band and easy to process.

The invention relates to a preparation method of a visible and near-infrared dual-band high-transmittance transparent conductive film, which is characterized by comprising the following steps of: (1) preparing an ITO (Indium Tin Oxide) film on a transparent substrate by adopting a magnetron sputtering process, and sputtering and depositing the ITO film with the thickness of 200-1000nm; and (2) placing the substrate on which the ITO film is deposited in a high-temperature furnace for rapid heating heat treatment, and cooling after heat treatment. The preparation method has the advantages that the preparation method is simple, and rapid batch production can be realized in combination with an existing magnetron sputtering system; the average transmittance of the transparent conductive thin film prepared by the method reaches 70%-75.1% at the wave band of 1.1-2.5 microns, the average transmittance of the visible light wave band is not lower than 84%, and the sheet resistance is 20-35 omega / sq.

The invention discloses weldable low-temperature sintered silver paste which is prepared by mixing 65-90 parts of micro-nano silver powder, 10-20 parts of metal salt additive, 1-5 parts of polymer additive, 15-19 parts of organic solvent and 1-5 parts of organic additive, the micro-nano silver powder is obtained by mixing nano silver powder with the particle size of 10-50nm and micron silver powder with the particle size of 1-10mu m, and a preparation method comprises the following steps: step 1, preparing a first-stage polymer carrier; the preparation method comprises the following steps: 1, preparing a first-stage polymer carrier, 2, preparing a second-stage polymer carrier, 3, pretreating micro-nano silver powder, and 4, preparing conductive silver paste. Through micro-nano silver powder grading, nano-particles are filled in gaps of micro-particles, the stacking density is improved, the sheet resistance is reduced, an oxidation film is formed on the surface of the passivated micro-nano silver powder, the interface bonding strength can be effectively improved, the sintering activation energy of silver is reduced by the metal salt additive, and by combining the'etching-remelting 'effect of the oxidation film on the surface of the silver powder, the bonding strength of the surface of the silver powder is improved. The sintering temperature is effectively reduced.

The invention provides a porous composite current collector and a preparation method thereof, the porous composite current collector comprises a base film layer and a conductive layer arranged on the surface of the base film layer, the conductive layer comprises a conductive material, the base film layer comprises a high-molecular polymer, the base film layer is provided with a plurality of through holes, and the through holes are communicated with the conductive material. And a blocking part for preventing magnetron sputtering pollution is arranged in the through hole. By effectively optimizing the composition and the preparation process of the porous composite current collector, the sheet resistance of the porous composite current collector is reduced, and the situation that a conductive material is hit onto a sputtering back roller through vertical holes to cause back roller pollution is avoided, so that the porous composite current collector has high conductivity and high compression strength, and the binding force of a conductive layer and a base film layer is improved.

The invention belongs to the technical field of organic functional materials and organic electronics, and particularly relates to a modified stretchable electrode and a preparation method and application thereof. Silver nanowire dispersion liquid is spin-coated on a substrate, an obtained silver nanowire film is patterned, the obtained patterned silver nanowire film is soaked in a modifier (a small molecule compound containing a group capable of being combined with silver and a hydrogen supply group) for modification, the upper portion of the obtained modified silver nanowire film is coated with an organic polymer solution, and after annealing, the silver nanowire film is obtained. And stripping from the substrate to obtain the modified stretchable electrode. Through the interaction between the modified and enhanced silver nanowire film and the organic polymer, the tensile property is improved, the situation that the sheet resistance of the modified stretchable electrode is increased due to breakage of the silver nanowires is avoided, and the modified stretchable electrode has high conductivity, high transparency and high fatigue resistance at the same time.

The invention provides a solar cell and a preparation method thereof, and a photovoltaic module, the solar cell comprises a silicon substrate, and the back surface of the silicon substrate comprises first doped regions and second doped regions which are alternately arranged along the horizontal direction of the silicon substrate; the first doped region corresponds to the P-type doped layer, the doping concentration of the first doped region is 1 * 10 < 15 > atom / cm < 3 > to 1 * 10 < 18 > atom / cm < 3 >, and the sheet resistance is 500-2000 omega / sq; the second doped region corresponds to the N-type doped layer, the doping concentration of the second doped region is 1 * 10 < 15 > atom / cm < 3 > to 1 * 10 < 18 > atom / cm < 3 >, and the sheet resistance is 500-2000 omega / sq; and the first passivation layer is positioned on the surfaces of the P-type doped layer and the N-type doped layer. The first doped region and the second doped region have the characteristics of low doping concentration and high sheet resistance, so that the photoelectric conversion efficiency of the solar cell is improved.

The invention belongs to the technical field of lithium ion batteries, and particularly relates to a preparation method of graphite-silicon mixed negative electrode slurry, a negative electrode plate and a lithium ion battery. Comprising the following steps: firstly, adding a polyacrylic acid PAA glue solution, conductive agent slurry and conductive agent powder into a pulping machine, and quickly stirring to obtain conductive adhesive slurry; then adding silicon powder into the obtained conductive adhesive slurry, and rapidly stirring to obtain silicon slurry; adding the graphite powder into another pulping machine, slowly stirring for a short time, adding a sodium carboxymethyl cellulose (CMC) glue solution and water, slowly stirring for a long time, and adjusting the solid content of the slurry to 62-68% to obtain graphite slurry; and adding the silicon slurry into the obtained graphite slurry in three times, and adding water to adjust the solid content of the slurry to be 45-55%. And finally, adding a styrene butadiene rubber SBR emulsion into the obtained slurry, slowly stirring, vacuumizing and sieving to obtain the final slurry. According to the preparation method of the slurry, the dispersion uniformity of silicon in graphite can be effectively improved, the volume expansion in the silicon circulation process is inhibited, the connection of the conductive agent and the silicon particles is promoted and the silicon conductivity is improved through the hydrogen bond bonding between the polyacrylic acid PAA with strong bonding force and the silicon particles, so that the resistance of a pole piece is reduced, and the cycle performance of the whole battery is improved.

A method for forming a coating on a substrate formed from zinc sulfide (ZnS) is provided. A ZnS film is grown on the substrate with a radio frequency sputtering process and metal dopants are sputtered on the substrate with a high-power impulse magnetron sputtering process. The metal dopants can be molybdenum or tungsten and simultaneously sputtered while growing the ZnS film. The sputtering ionizes the coating where the coating has a sheet resistance that is less than 50 ohm / square and the metal dopants form n-type dopants in the ZnS film. The metal dopants can be formed at a concentration that varies with a thickness of the ZnS film. At a first thickness, the concentration is at a first concentration and at a second thickness greater than the first thickness, the concentration is at a second concentration less than the first concentration.

The invention relates to the technical field of lithium battery materials, in particular to a composite current collector with a local enhanced welding area and a preparation method thereof.The composite current collector with the local enhanced welding area comprises a composite current collector body, and a through hole is formed in a preset welding area of the composite current collector body; a metal foil is attached to a preset welding area of the composite current collector body and is used for being welded with a tab, and the metal foil covers the through hole. According to the technical scheme provided by the invention, the through holes are formed in the tab preset welding area of the composite current collector to form a microscopic exhaust channel, so that an escape path is provided for gas generated in the welding process, and the compactness and firmness of a welding interface are ensured; by increasing the effective conductive thickness of the predetermined welding area, the sheet resistance and contact resistance of the area are significantly reduced.

The invention provides a composite sodium ferric sulfate positive electrode material and a preparation method thereof, a sodium ion battery positive plate and a sodium ion battery, and relates to the technical field of batteries. According to the preparation method of the composite sodium ferric sulfate positive electrode material, boron is doped in the preparation process of the conductive agent, so that the conductivity of the conductive agent can be improved, and the dosage of the conductive agent is reduced; the conductive agent is added in the preparation process of the positive electrode material, so that the dispersion uniformity of the conductive agent can be improved; through high-temperature sintering, the contact between the conductive agent and the active material is firmer, and the dry-method pole piece prepared from the material has lower pole piece resistance.

The invention relates to the technical field of thick-film resistors, and discloses a high-sheet-resistance resistor paste, a preparation method thereof and a thick-film circuit. The resistance paste comprises 6%-24% of a composite conductive phase, 33%-57% of an inorganic binding phase, 2%-6% of a modifier and 22%-38% of an organic carrier. The conductive phase comprises nano-scale / submicron-scale ruthenium dioxide powder and submicron-scale flake silver powder, and the conductivity and the stability are cooperatively guaranteed. According to the preparation method, a secondary dispersing and grinding process is adopted, and a finished product is obtained through coarse grinding, vacuumizing fine grinding and 800-mesh filtering. The thick film circuit adopts an N-group parallel architecture, so that the use amount of conductive phases can be greatly reduced. The problem that traditional slurry is poor in stability under high sheet resistance is solved, TCR is smaller than or equal to 100 ppm / DEG C, resistance precision is within + / -5%, temperature and humidity stability is excellent, cost is low, and the slurry is suitable for high-precision heating scenes such as a new energy automobile heating system.

The application discloses a physical vapor deposition device, an electrochromic device and a preparation method thereof, and relates to the technical field of electrochromic devices. The preparation method comprises the following steps: sputtering and depositing an electrochromic layer of WO3 on the surface of a first ITO layer, and the oxygen content is any value in the range of 42.5% to 52.5%; sputtering and depositing a pre-set thickness of a tungsten oxide ion conduction layer on the electrochromic layer, and the oxygen content of the corresponding chamber is any value in the range of 35% to 45%; sputtering and depositing an ion storage layer containing lithium ions on the ion conduction layer; depositing a second ITO layer on the ion storage layer, and obtaining the electrochromic device after vacuum annealing treatment and cooling treatment; wherein the deposition temperature of the second ITO layer is any value in the range of 350 DEG C to 400 DEG C, and the annealing temperature of the vacuum annealing treatment is any value in the range of 450 DEG C to 500 DEG C. The electrochromic device prepared by the application has the characteristics of high transmittance and low sheet resistance.

The invention belongs to the technical field of flexible sensing, and particularly relates to a tensile transparent resistive sensor and a preparation method thereof. The sensor is composed of an elastic substrate and gradient conductive layers, the conductive layers I and II are metal nanowire grids, the conductive layer III is a PEDOT: PSS / metal nanowire composite layer, the three layers form a gradient conductive network on the rigid substrate through a layer-by-layer coating process, and then the gradient conductive network is integrally transferred to the surface of the elastic substrate through a freezing auxiliary transfer printing technology. And forming an interlayer interpenetrating stretchable transparent conductive structure. After the structure is circularly stretched for 100 times under 50% strain, the resistance change rate is less than or equal to 7%, the light transmittance at 550 nm is more than or equal to 85%, the sheet resistance is as low as 16 omega / sq, and the structure has high sensitivity (the detection limit is less than or equal to 5% strain), high light transmittance and excellent cycle stability. The preparation method adopts an all-solution process, is low in cost, can realize large-area preparation, and is suitable for the fields of wearable electronics, health monitoring, human-computer interaction and the like.

To provide a wiring body and a display device capable of reducing sheet resistance, while improving the flatness of the wiring body.SOLUTION: According to a wiring body 200, a mesh-like conductor layer 5 provided on a light-transmissive substrate 1 is covered with a multilayer resin layer 9 composed of a first resin layer 7 and a second resin layer 8. As a result, any unevenness that may occur on the surface of the wiring body 200 due to the conductor layer 5 can be absorbed by the resin layer 9. Therefore, the flatness of the surface of the wiring body 200 can be improved. In the embodiment, an upper surface 8a of the second resin layer 8 constitutes the surface of the wiring body 200. Furthermore, the conductor layer 5 penetrates the first resin layer 7 on the light-transmissive substrate 1 side. As a result, it is possible to ensure the volume of the conductor while suppressing the thickness of conductor lines 50 of the conductor layer 5. Therefore, the sheet resistance of the wiring body 200 can be reduced. Thus, the flatness of the wiring body 200 can be improved while reducing the sheet resistance.SELECTED DRAWING: Figure 6

The invention provides a method for detecting the accuracy of ion implantation energy, and the method comprises the following steps: providing a semiconductor substrate, and forming a reference well layer on the semiconductor substrate, the reference well layer having a first conductive type; ion implantation equipment is adopted to carry out an ion implantation technology, a detection well layer is formed on the reference well layer, the detection well layer has a second conduction type, a plurality of detection structures are formed by changing the implantation energy of the ion implantation technology, and the detection well layers of the detection structures have different ion implantation depths; measuring the square resistance of each detection structure; establishing an energy-square resistance curve of the ion implantation process of the ion implantation equipment based on a mapping relation between different implantation energies and corresponding square resistances; obtaining a standard energy-square resistance value relation based on a standard ion implantation device; and according to the energy-square resistance curve of the ion implantation technology and the standard energy-square resistance value relationship, determining the energy deviation of the ion implantation equipment at the specific implantation energy.

The application provides a semiconductor process equipment control method and a semiconductor process equipment; in the semiconductor process equipment control method, when the deposition process chamber is idle for a long time, the target material cleaning process is performed on the deposition process chamber, the wafer is pretreated in the degassing process chamber, and after the pretreatment process and the target material cleaning process are completed, the deposition process is performed on the pretreated wafer in the deposition process chamber, so that the pretreated wafer can enter the deposition process chamber for process processing under the condition of low thermal energy loss after the target material cleaning process is completed, thereby not only reducing the temperature loss of the pretreated wafer before process processing, effectively reducing the resistance change caused by the idle effect of the deposition process chamber, improving the stability of the sheet resistance of the thin film, but also improving the production capacity of the semiconductor process equipment.

The purpose of this invention is to disclose a silicon wafer boron expansion process data characterization system, including a boron expansion process data module and a sheet resistance data module. The data collected by the boron expansion process data module and the data collected by the sheet resistance data module are matched using timestamps, boron expansion equipment IDs, furnace tube IDs, and graphite boat IDs. The beneficial effects of this invention are: by accurately matching the data collected by the boron expansion process data module and the sheet resistance data module using timestamps, boron expansion equipment IDs, furnace tube IDs, and graphite boat IDs, on the one hand, it ensures that the data collected by each sheet resistance data module accurately corresponds to the data collected by the boron expansion process data module, accurately reflecting the adaptability of the data collected by the boron expansion process data module and facilitating timely adjustments to the boron expansion process; on the other hand, it facilitates big data processing of the data collected by the boron expansion process data module and the sheet resistance data module.

A main semiconductor device element and a temperature sensing section for sensing the temperature of the main semiconductor device element are provided on a semiconductor substrate containing SiC. The temperature sensing section (10) is a lateral pn-junction diode formed in a polysilicon layer (3) and provided on a front surface of a semiconductor substrate (101) by means of an interlayer insulating film (9). A p-type anode region (1) of the temperature sensing section (10) is formed by ion implantation of B or In into the polysilicon layer (3). The temperature sensing section and an n-type cathode region are formed by ion implantation of P or Sb into the polysilicon layer. The sheet resistance of the p-type anode region (1) at 25 °C is not less than 50 Ω / □ but not more than 170 Ω / □.The n-type cathode region (2) exhibits a surface resistance of not less than 80 Ω / □ but not more than 400 Ω / □ at 25 °C. Thus, the temperature sensing accuracy of the temperature sensing section (10) can be improved.

The invention discloses a phosphorus diffusion method for improving photoelectric conversion efficiency of a BC type battery, which realizes high sheet resistance (20-150 omega) with excellent uniformity while obtaining high impurity concentration PSG by improving a phosphorus diffusion process after an N-type BC type battery LP route N-poly, thereby improving FF of the BC type battery, reducing contact resistance Rs and finally improving the photoelectric conversion efficiency of the battery to a greater extent. And secondly, a multi-step source-passing method is adopted, the source-passing time is shortened, the source-passing flow is increased, rapid temperature rise propulsion and the like are adopted, a conventional phosphorus diffusion method is changed, high sheet resistance with excellent uniformity is realized while high-impurity-concentration PSG is obtained, reduction of N-region carrier recombination is ensured, FF and Uoc are improved, and finally the conversion efficiency of the battery is improved to the maximum extent.

This invention discloses a metallized film and a metallized film capacitor. The metallized film includes an organic thin film layer, a high sheet resistance layer, and multiple thickened ribs. The width of the organic thin film layer is greater than the width of the high sheet resistance layer, creating an unplated area through the width difference between the organic thin film layer and the high sheet resistance layer. The high sheet resistance layer is deposited on one side of the organic thin film layer, and the multiple thickened ribs are spaced apart on the other side of the high sheet resistance layer opposite to the organic thin film layer. This effectively increases the interlayer air gap of the metallized film capacitor, prevents incomplete self-healing and short circuits due to small interlayer air gaps during self-healing, and ensures the safety of the metallized film capacitor.

The invention discloses a standard cell library with various square resistance values, a manufacturing method and application thereof, and the manufacturing method comprises the following steps: designing a layout containing a plurality of standard cells, each standard cell being a minimum complete structure capable of independently reflecting a specific square resistance value, the layout comprises patterns of two metal silicide barrier layers arranged on the polycrystalline silicon surfaces of the standard units and a distance between the two metal silicide barrier layers, the distance is used for controlling the generation area of metal silicide, and the square resistance value of each standard unit is adjusted by adjusting the distance; a plurality of standard units are manufactured based on the layout, and the standard units form a standard unit library. On the premise of keeping the absolute advantages of simple process and low cost, the invention provides a standard cell library with various square resistance values, successfully realizes the manufacturing and flexible adjustment of the polycrystalline silicon resistor, and has extremely high application value.

This invention belongs to the field of conductor materials technology, and relates to a conductor paste for LED chip packaging and its preparation method. The invention provides a method for preparing a conductor paste, comprising: mixing copper powder and deionized water at a mass ratio of 1:5 to 1:7, dispersing evenly, adding triallyl citrate and sodium glyoxylate, and heating at 55-60°C for 1-2 hours; then adding γ-methacryloyloxypropyltrimethoxysilane and heating at 45-50°C for 1-2 hours; finally, vacuum drying to obtain antioxidant copper powder; and mixing the antioxidant copper powder, resin binder, solvent, and additives evenly to obtain the conductor paste. The conductor paste provided by this invention has excellent conductivity, good adhesion to LED chip substrates, and is not easily oxidized at high temperatures. This invention solves the technical problem of excessive sheet resistance in conductor pastes obtained by coating copper powder with γ-methacryloyloxypropyltrimethoxysilane to improve its antioxidant properties.

The invention discloses physical vapor deposition equipment, an electrochromic device and a preparation method of the electrochromic device, and relates to the technical field of electrochromic devices. The preparation method comprises the following steps: sputtering and depositing the WO3 electrochromic layer on the surface of the first ITO layer, wherein the oxygen content is any one of 42.5-52.5%; sputtering and depositing a tungsten oxide ion conducting layer with a preset thickness on the electrochromic layer, wherein the oxygen content of the corresponding chamber is any one of 35%-45%; sputtering and depositing an ion storage layer containing lithium ions on the ion conduction layer; a second ITO layer is deposited on the ion storage layer, and the electrochromic device is prepared after vacuum annealing treatment and cooling treatment; wherein the deposition temperature of the second ITO layer is any one value from 350 DEG C to 400 DEG C, and the annealing temperature of the vacuum annealing treatment is any one value from 450 DEG C to 500 DEG C. The electrochromic device prepared by the invention has the characteristics of high transmittance and low sheet resistance.

This invention discloses a sheet resistance testing unit and structure, belonging to the field of semiconductor technology. The sheet resistance testing unit includes a first resistor, formed by the length and width of a layout design; and a second resistor with the same layout design dimensions as the first resistor, and an angle between the first and second resistors to achieve mutual resistance compensation. The second resistor is also connected to the first resistor via a connector to ensure that the current flow directions in the first resistor, the second resistor, and the connector are the same. By providing a first resistor and a second resistor with correspondingly equal layout dimensions and the same current direction, under the same process fluctuation conditions, the differential polarities of the first and second resistors are opposite, and the resulting resistance value deviations can be mutually compensated, effectively reducing the impact of active region process fluctuations on sheet resistance testing in small-size applications.

The utility model discloses a single crystal Topcon battery low pressure diffusion air inlet pipe, and relates to the technical field of low pressure diffusion air inlet pipes, the single crystal Topcon battery low pressure diffusion air inlet pipe comprises a built-in pipe and an outer sleeve, one end of the built-in pipe is an air inlet end and is located in the middle of the outer sleeve, and the outer side line of the air inlet end extends to be closed with the outer sleeve and is a closed side; the other end of the built-in pipe is closed with the closed end of the outer sleeve, and is communicated with an inner air hole and an exhaust hole I which are laterally formed respectively; a plurality of groups of inner air holes are uniformly distributed on the built-in pipe, and a plurality of inner air holes in each group are circumferentially distributed along the central axis of the built-in pipe in a surrounding manner; a first exhaust hole, a second exhaust hole and a third exhaust hole are respectively formed in the outer sleeve, and the hole diameter in the direction from the air inlet end of the built-in pipe to the closed end is gradually increased, so that the technical problem that in the prior art, due to the fact that a single air outlet in the diffusion furnace causes different doping concentrations of silicon wafers at different positions in the pipe, the sheet resistance uniformity is poor is solved.