378 results about "Conductive oxide" patented technology

The invention belongs to the field of heterojunction cells, and particularly discloses a heterojunction cell and a preparation method thereof, which are characterized in that heavily doped amorphous silicon is deposited in a corresponding area of a grid line electrode, so that high parasitic absorption, surface dangling bond and interface state density are reduced, and the open voltage and the efficiency of the heterojunction cell are improved. The main technical scheme of the invention is as follows: according to the heterojunction cell, grooves are formed in corresponding areas of grid line electrodes on the front surface and the back surface of an N-type silicon substrate; arranging an intrinsic amorphous silicon layer; the light doping P-type amorphous silicon layer is arranged on the front intrinsic amorphous silicon layer, the light doping N-type amorphous silicon layer is arranged on the back intrinsic amorphous silicon layer, the heavy doping P-type amorphous silicon layer is arranged in a groove corresponding area on the light doping P-type amorphous silicon layer, the heavy doping N-type amorphous silicon layer is arranged in a groove corresponding area on the light doping N-type amorphous silicon layer, and the light doping N-type amorphous silicon layer is arranged in a groove corresponding area on the light doping N-type amorphous silicon layer. The P-type doped amorphous silicon layer and the N-type doped amorphous silicon layer are respectively provided with a transparent conductive oxide layer, and the grid line electrodes are arranged on the transparent conductive oxide layers. The invention is mainly used for power generation.

The invention discloses a perovskite solar cell module based on insulation layer protection and a packaging process optimization method thereof, through adding an insulation protection layer on the surface of a metal electrode layer and combining a specific deposition process and a packaging process, the risk of short circuit is effectively avoided, and the stability of the cell module is improved at the same time. The perovskite solar cell module sequentially comprises a glass substrate, a transparent conductive oxide layer, a first functional layer, a perovskite layer, a second functional layer, a metal electrode layer, an insulating layer, an adhesive film and a packaging cover plate from bottom to top, and efficient packaging is realized by optimizing laser scribing and insulating layer deposition processes. According to the invention, the long-term stability and the electrical performance of the perovskite assembly are obviously improved, and the perovskite assembly has a wide application prospect.

The invention discloses a group III chloride ex-situ doped cadmium telluride thin film solar cell and a preparation method thereof, and the cadmium telluride thin film solar cell comprises a substrate layer, a transparent conductive oxide thin film layer, a high-resistance buffer layer, a cell window layer, a cell layer, a back contact layer and a back electrode layer which are sequentially arranged from bottom to top. The cell layer comprises an absorption layer and a IIICl3 layer coated on the upper surface of the cell window layer, and IIICl3 is chloride of the III main group element. According to the III-group chloride ex-situ doping method provided by the invention, the III-group chloride can be dissolved in an organic solution, room-temperature solution deposition is allowed, III-group cations are easy to diffuse at a relatively low annealing temperature, and a complex annealing process is not needed to activate a dopant; through a simple solution process and low-temperature activation, efficient doping of the CdTe absorption layer is effectively realized, and the open-circuit voltage and the overall photoelectric conversion efficiency of the cell are remarkably improved.

The invention discloses a hole transport layer, a preparation method thereof and a solar cell. The hole transport layer comprises an SAM (single self-assembled monomolecular layer) material and a buried material, and the buried material comprises F-type phosphate group-containing molecules. According to the invention, the technical problems of poor coverage of a hole transport material SAM on a transparent conductive oxide (TCO) substrate and weak transmission capability in a perovskite cell or a laminated cell in the prior art can be solved. The hole transport layer is more uniform, the interface transmission loss is smaller, and the filling factor and the conversion efficiency are remarkably improved when the hole transport layer is used for the solar cell.

The invention relates to the technical field of solar cells, in particular to a silicon heterojunction solar cell and a preparation method thereof, a dielectric anti-reflection passivation layer and a functional layer are arranged on a light receiving surface of a substrate side by side, a front transparent conductive oxide layer is arranged on the functional layer, a front electrode is arranged on the front transparent conductive oxide layer, and a back electrode is arranged on the back transparent conductive oxide layer. The front transparent conductive oxide layer is wider than the front electrode. The dielectric antireflection passivation layer is arranged in a large area, the passivation effect similar to that of the functional layer is provided through the high thickness, transverse transmission of carriers is greatly reduced through the dielectric property of the dielectric antireflection passivation layer, the area of the functional layer can be reduced, and therefore the use area of the front transparent conductive oxide layer is reduced.

The invention relates to the technical field of solar cells, in particular to a back contact cell and a photovoltaic module. The back contact battery comprises a semiconductor substrate, the semiconductor substrate is provided with a front face and a back face which are oppositely arranged, and a side face is arranged between the front face and the back face in a surrounding mode; emitter electrodes and base electrode contact regions are alternately distributed on the back surface, isolation regions are arranged between the emitter electrodes and the base electrode contact regions, positive electrodes are arranged on the emitter electrodes, and negative electrodes are arranged on the base electrode contact regions; a passivation layer is arranged on the front face of the semiconductor substrate, a first transparent conductive oxide layer is arranged on the side, away from the semiconductor substrate, of the passivation layer, and the first transparent conductive oxide layer is electrically connected with at least one emitting electrode. The back contact battery provided by the embodiment of the invention has good anti-PID (Proportion Integration Differentiation) performance.

The invention provides a method for testing the contact resistance of a solar cell film, which comprises the following steps of: preparing a plurality of multi-layer stacked test samples with different thicknesses, and alternately depositing an amorphous silicon film and a transparent conductive oxide film on a glass substrate of each sample to form a horizontal laminated structure; respectively arranging silver electrodes on the left side and the right side of each sample for performing voltage-current volt-ampere test, and recording the total resistance of each sample in a specified voltage range and the change condition of the total resistance along with the thickness of the film layer; electrode contact resistance is measured and deducted; reversely deducing the resistance value when the thickness of the film layer is 0 through an extrapolation method to obtain the contact resistance between the film layers; and calculating the contact resistance of a single interface according to the number of contact interfaces of the amorphous silicon film and the transparent conductive oxide film in the sample. The method is suitable for a test system under different manufacture procedures and thickness changes, and quantitative extraction of the contact resistance between the amorphous silicon and the TCO is achieved.

The application discloses a preparation of a low-temperature and low-bombardment transparent conductive film and application of the transparent conductive film in a perovskite / crystalline silicon laminated solar cell. The composite film is prepared by magnetron sputtering of TCO ceramic targets with different doping ratios at room temperature. ‑5 The composite transparent conductive oxide film is obtained by adjusting the sputtering pressure and power of the TCO film with different doping ratios and adjusting different growth modes, and the composite transparent conductive oxide film has a low-temperature and low-bombardment property. The lower layer of the composite transparent conductive oxide film is in a columnar crystal growth mode, and the upper layer is in an equiaxed large-grain growth mode. The composite transparent conductive oxide film can be applied in a perovskite / silicon laminated solar cell, can promote the vertical and horizontal transmission capacity of carriers in a TCO transparent electrode, promotes the effective collection and transmission of carrier charges, and thus a high-efficiency perovskite / silicon laminated solar cell is obtained.

The invention provides a back contact solar cell and a photovoltaic module, the back contact solar cell comprises a silicon substrate, and the back surface of the silicon substrate comprises first areas and second areas which are alternately arranged; the first area and the second area are both provided with discontinuous fine grids extending in the first direction, and each fine grid corresponds to a plurality of discontinuous areas; the back contact solar cell also comprises a plurality of main grids extending along a second direction; the discontinuous area is covered with an insulation structure, the lower portion of the insulation structure corresponds to a transparent conductive oxide layer of the back contact solar cell, and the main grid penetrates through the discontinuous area and is insulated from the transparent conductive oxide layer through the insulation structure. According to the invention, the grid line structure of the HTBC battery is optimized, and the reliability of the HTBC battery is improved while the manufacturing cost is reduced.

The invention discloses a gallium-cerium co-doped ITO target material and a preparation method thereof, and belongs to the field of transparent conductive oxide ceramic target materials, and the preparation method comprises the following steps: weighing indium oxide powder raw materials, tin oxide powder raw materials, gallium oxide powder raw materials and cerium oxide powder raw materials in proportion, and performing pretreatment; the raw material powder is subjected to independent ball milling till the raw materials reach the preset particle size; mixing the four kinds of slurry, and continuously performing ball milling to obtain uniform mixed slurry; adding a binder into the mixed slurry, and carrying out ball milling and mixing to form stable formed slurry; carrying out spray granulation on the formed slurry to obtain spherical precursor powder; pressing and forming the precursor powder to obtain a biscuit, then putting the biscuit into a sintering furnace, carrying out stepped sintering in an oxygen atmosphere, and naturally cooling to obtain the gallium-cerium co-doped ITO target material. According to the gallium-cerium co-doped ITO target material prepared by the method, the relative density is greater than or equal to 99.4%, the resistivity is less than or equal to 99.4%, and the three-point bending strength is greater than or equal to 230MPa.

The embodiment of the invention provides a back contact crystalline silicon solar cell and a back contact photovoltaic module, the back contact crystalline silicon solar cell comprises a crystalline silicon substrate, the back surface of the crystalline silicon substrate is alternately provided with a first region and a second region, and the first region comprises a current collection region and a lamination region; in the collector region, the back surface of the crystalline silicon substrate is sequentially provided with a doped internal expansion layer, a first interface passivation layer, an N-type doped polycrystalline silicon layer, a transparent conductive oxide layer and a first back electrode, and a plurality of protruding structures are distributed on the surface of the N-type doped polycrystalline silicon layer. The contact area between the protruding structure and the first back electrode through the transparent conductive oxide layer is increased, so that the transmission resistance loss of carriers transported from the crystalline silicon substrate to the first back electrode is reduced, and the photoelectric conversion efficiency of the back contact crystalline silicon solar cell is improved.

The application relates to a coated glass and a laminated glass, the coated glass comprising a first glass sheet and a low-emissivity stack arranged on at least one surface of the first glass sheet, the low-emissivity stack comprising at least one transparent conductive oxide layer and at least one visible light blocking layer, the at least one visible light blocking layer being arranged on a side of the at least one transparent conductive oxide layer away from the first glass sheet, the at least one visible light blocking layer having a total physical thickness greater than 10 nm; the first glass sheet having a visible light transmittance TL1, the coated glass having a visible light transmittance TL2, TL1 and TL2 satisfying TL2 / TL1<=0.4. The coated glass can ensure low emissivity and low visible light transmittance, realize low visible light reflectivity, and make the prepared laminated glass have neutral color and lower manufacturing cost.

Provided is a transparent conductive film that makes it possible to achieve a low resistance value by maintaining low resistivity even when the film thickness of a transparent electrode layer comprising a conductive oxide is increased.　The present invention pertains to a transparent conductive film 1 in which a transparent electrode layer 40 containing indium oxide as a main component is formed on a substrate 30, wherein the transparent electrode layer 40 has a film thickness of 80 nm or more, and the peak intensity ratio I30.2 / I30.4 of the peak intensity I30.2 of 2θ = 30.2° and the peak intensity I30.4 of 2θ = 30.4° in an X-ray diffraction result in which the background is not removed from the X-ray diffraction pattern is 0.8 or less.

The invention discloses an HJT solar cell based on a metal grid copper electrode, which comprises an N-type monocrystalline silicon substrate, the front surface and the back surface of the N-type monocrystalline silicon substrate are respectively textured, an I-type amorphous silicon layer and a P-type amorphous silicon layer are sequentially laminated on the front surface of the N-type monocrystalline silicon substrate, and an I-type amorphous silicon layer and an N-type amorphous silicon layer are sequentially laminated on the back surface of the N-type monocrystalline silicon substrate; the surface of the P-type amorphous silicon layer and the surface of the N-type amorphous silicon layer are both covered with transparent conductive oxide layers, the transparent conductive oxide layers are coated with transparent conductive colloid layers, the transparent conductive colloid layers comprise transparent resin binders and conductive substances dispersed in the transparent resin binders, and metal grid copper electrodes are arranged on the transparent conductive colloid layers; through precise design of the line width and the spacing of the metal grid copper electrode, the shading rate can be reduced to the maximum extent while low square resistance and efficient current collection can be ensured, and the requirements of scenes such as building integrated photovoltaic and the like for high-light-transmittance and low-resistance electrodes are met.

The invention provides a composite seed layer and a copper gate heterojunction battery, and relates to the technical field of battery manufacturing. The metal oxide intermediate layer is introduced into the traditional metal seed layer, so that the problem of insufficient adhesive force between the pure metal seed layer and the transparent conductive oxide film in the prior art is effectively solved. The metal oxide intermediate layer can form a more stable interface with the transparent conductive oxide film, and the overall adhesive force of the composite seed layer is remarkably enhanced, so that the stripping or layering phenomenon possibly occurring in the subsequent copper electroplating process is avoided. Besides, the structure also inhibits the erosion of a process solution in an electroplating or cleaning process, thereby improving the conversion efficiency and long-term reliability of the copper gate heterojunction cell, and overcoming the problems of unstable cell performance and low yield caused by performance defects of the seed layer in the prior art.

The invention relates to the technical field of batteries, in particular to a processing method of a back-polished suede-like heterojunction battery rework piece and application of the back-polished suede-like heterojunction battery rework piece. The processing method comprises the following steps: S1, if a transparent conductive oxide film layer exists on the surface of a reworked piece, removing the transparent conductive oxide film layer by acid pickling; s2, performing alkaline micro-corrosion secondary texturing treatment on the reworked wafer treated in the step S1 so as to selectively remove an amorphous silicon functional layer, modifying a front pyramid textured surface so as to reduce the reflectivity, and enabling the reflectivity reduction amount of a back-like back-polished structure to be less than or equal to 3.5%; and S3, carrying out cleaning and surface rounding treatment on the silicon substrate after secondary texturing. According to the method, high-efficiency, low-loss and low-cost reworking treatment is realized while the integrity of the similar back-polished differentiated suede structure is guaranteed, and a key technical support is provided for large-scale manufacturing of the thin-sheet heterojunction solar cell.

A method for manufacturing a semiconductor structure includes: depositing atomic layers of tin monoxide along a vertical direction; patterning the atomic layers of tin monoxide into a channel unit; forming a first conducting oxide unit that is connected to the channel unit; forming a second conducting oxide unit that is connected to the channel unit and that is spaced apart from the first conducting oxide unit so as to permit charge carriers to be transmitted between the first conducting oxide unit and the second conducting oxide unit through the patterned atomic layers in the channel unit along the vertical direction; forming a gate dielectric over the channel unit, the first and second conducting oxide units; forming a metal gate over the gate dielectric; recessing the metal gate to expose the gate dielectric; and partially removing the gate dielectric to expose at least the first conducting oxide unit.

The present disclosure provides a composite particle, a multilayer ceramic capacitor, and a method for manufacturing the multilayer ceramic capacitor. The composite particle according to an embodiment of the present disclosure comprises: a conductive core; a conductive oxide layer disposed on the conductive core and including a metal oxide; and a coating layer disposed on the conductive oxide layer and including glass.

A kind of transverse perovskite solar cell, including transparent conductive layer, hole transport layer, perovskite absorption layer, electron transport layer and back electrode layer arranged in sequence;Back electrode layer is the composite structure of transparent conductive oxide layer and active metal layer;Electron transport layer is fullerene electron transport layer;Transverse perovskite solar cell further includes buffer layer, buffer layer is located between electron transport layer and back electrode layer, and buffer layer is molybdenum-doped indium oxide layer.Using molybdenum-doped indium oxide as buffer layer, compared with traditional tungsten-doped indium oxide, in the top electron collection interface of transverse perovskite solar cell, better energy level matching, more superior low-temperature electrical performance, stronger interface stability and wider process window are realized.

The present invention relates to a window pane with an emissivity-reducing coating, comprising at least a glass pane (2) and an emissivity-reducing coating (10) on a surface of the glass pane (2), wherein the emissivity-reducing coating (10), starting from the surface of the glass pane (2), comprises, in the following order, an electrically conductive layer (13) based on a transparent conductive oxide, a dielectric upper antireflection layer (15) with a refractive index of at most 1.6, and a DLC layer (16), wherein the dielectric upper antireflection layer (15) is arranged immediately adjacently to the DLC layer (16).

This invention relates to a thermoplastic composition comprising: a) 20 to 90 wt% of a thermoplastic resin, b) a laser-direct structuring additive, c) optionally, ceramic filler particles without laser-direct structuring additive function, and d) 0.1 to 5.0 wt% of an acid-modified polymer, wherein b) comprises b1) a conductive metal oxide, wherein the conductive oxide has a maximum of 5 x 10⁻⁶ ppm. 3 The resistivity is Ω·cm, and it contains at least a metal of Group n and Group (n+1) of the periodic table, where n is an integer from 3 to 13, and / or b2) calcium copper titanate.

The invention relates to a preparation method of conductive ceramic Mg3Ga2GeO8 for an all-solid-state battery, and belongs to the technical field of all-solid-state batteries. The preparation method mainly comprises the following steps: roasting MgO, Ga2O3 and GeO2 powder in an air atmosphere, adding a solvent, and drying after ball milling; adding the primary sintered ceramic wafer and a binder into a solvent, grinding, drying, tabletting, and carrying out air burning at 1200-1400 DEG C to obtain a primary sintered ceramic wafer; and crushing and grinding the primarily sintered ceramic chip, taking powder, and repeatedly sintering for 2-3 times to obtain the Mg3Ga2GeO8 ceramic chip with a compact structure and a single phase. The ionic conductivity of the prepared ionic conductive oxide Mg3Ga2GeO8 is high, the ionic conductivity reaches 10 <-5 > S / cm at 25 DEG C, the activation energy is as low as 0.80 eV, the process is simple, and the method is suitable for industrial production.

The invention relates to the technical field of solar cells, and mainly provides a solar cell and a preparation method thereof. The solar cell comprises a silicon substrate with a light incident surface and a backlight surface which are oppositely arranged; the first intrinsic amorphous silicon layer and the first doping layer are located on the light incident surface and are sequentially stacked in the direction away from the silicon substrate; wherein the first doping layer comprises a nanocrystalline silicon oxide layer; the second intrinsic amorphous silicon layer, the second doping layer and the second transparent conductive oxide layer are located on the backlight surface and sequentially stacked in the direction away from the silicon substrate; wherein the second doping layer comprises a first microcrystalline silicon oxycarbide layer, a second microcrystalline silicon oxycarbide layer and a third microcrystalline silicon oxycarbide layer which are sequentially stacked in the direction away from the silicon substrate. According to the technical scheme, the solar cell is beneficial to migration of carriers, and the current density and the photoelectric conversion efficiency of the solar cell can be improved.

The application discloses a full solid battery and a preparation method thereof, and a battery module. The full solid battery comprises a positive electrode sheet, a negative electrode sheet and a sulfide solid electrolyte layer between the positive electrode sheet and the negative electrode sheet which are arranged in a stack; the positive electrode sheet comprises a positive electrode current collector and a composite positive electrode layer on at least one side of the positive electrode current collector; wherein the composite positive electrode layer comprises a high-voltage oxide positive electrode main material, an oxide solid electrolyte, a conductive oxide and a sintering aid; the particles of the high-voltage oxide positive electrode main material, the oxide solid electrolyte and the conductive oxide are combined through sintering necks based on the sintering aid; the sintering aid comprises at least one of a metal element, an inorganic oxide, a metal fluoride, a metal nitride and a lithium-containing compound; the problems of poor physical contact and unstable chemical interface between the oxide positive electrode and the sulfide solid electrolyte are solved, and the safety performance of the battery is greatly increased.

Disclosed is an organic light emitting display device including a plurality of light emitting areas emitting light of different colors. The organic light emitting display device includes first to third pattern electrodes connected to driving elements, respectively; an organic light emitting structure disposed on the first to third pattern electrodes; a common electrode disposed on the organic light emitting structure; and a resonance control pattern disposed between the first pattern electrode and the organic light emitting structure, overlapping the first light emitting area, and including a conductive oxide. The organic light emitting structure includes a hole transport layer, an electron transport layer, and a light emitting layer disposed between the hole transport layer and the electron transport layer. The light emitting layer includes a common light emitting layer continuously extending within the organic light emitting structure, and a light emitting pattern overlapping the third pattern electrode.

The invention discloses a method for improving the photoelectric property of a transparent conductive oxide film and application, and belongs to the field of optoelectronic devices. The method comprises the following steps: growing a transparent conductive oxide film (TCO), a glass substrate or a silicon substrate by using a magnetron sputtering technology (or a reaction plasma deposition technology); and growing a gradient refractive index SiNyOx / SiOx thin film on the TCO thin film by using a radio frequency magnetron sputtering technology so as to construct the composite thin film (TCO / SiNyOx / SiOx) and improve the optical transmittance and the electrical stability of the TCO thin film. According to the invention, the optical and electrical properties of the transparent conductive oxide film can be improved, the transmission of the film is enhanced, the reflection is reduced, and the transparent conductive oxide film can be applied to crystalline silicon heterojunction solar cells or other optoelectronic devices and the like.

The invention relates to the technical field of photovoltaic cells, in particular to a photovoltaic cell and a photovoltaic module. The photovoltaic cell adopts a heterojunction structure, and the core is that TCO (Transparent Conductive Oxide) films are respectively arranged on the front surface and the back surface of a solar cell piece as transparent conductive film layers and are positioned on the outermost layer. A first light conversion layer containing first quantum dots is arranged outside the front transparent conductive film layer, and a second light conversion layer containing second quantum dots is arranged on the back; or the light conversion layers are added between the transparent conductive film layer and the corresponding electrodes. The first quantum dot comprises IIB-VIA family, and can absorb ultraviolet light and convert the ultraviolet light into visible light; the second quantum dot comprises IVA-VIA family and is used for absorbing infrared light and converting the infrared light into visible light. The design improves the utilization rate of ultraviolet and infrared light, reduces the conversion of the ultraviolet and infrared light into heat energy, reduces the working temperature, improves the photoelectric conversion efficiency and reliability, prolongs the service life, enables the cell to efficiently operate in a wider spectral range, and remarkably improves the overall performance.

To provide a low-power, high-density, 1T-1C (one transistor and one capacitor) memory bit-cell.SOLUTION: The capacitor has a pillar structure, which comprises ferroelectric material (perovskite, improper ferroelectric, or hexagonal ferroelectric) and conductive oxides as electrodes. In various embodiments, one layer of the conductive oxide electrode wraps around the pillar capacitor, and forms the outer electrode of the pillar capacitor. The core of the pillar capacitor can take various forms.SELECTED DRAWING: Figure 1C

The invention relates to the technical field of intelligent integrated devices, in particular to a vertical fin type display sensing module and a preparation method thereof.The module comprises a driving backboard and an anode on the driving backboard, the anode is provided with a semiconductor fin type structure, the semiconductor fin type structure comprises an n + GaN layer and a graphical n-GaN epitaxial layer, a protruding fin part with a notch is formed, and the n + GaN layer is arranged on the n + GaN layer. A P + region and a P + + region are formed by ion implantation on the side walls of the gap and the fin part, an N + region is formed at the top, a grid electrode is arranged on the P + + region, a metal layer and a transparent conductive oxide layer are arranged on the N + region, and a light-emitting unit is bonded on the transparent conductive oxide layer; the image sensing unit is overlapped with the projection of the fin type structure and comprises a light filtering layer and a micro lens. The preparation method comprises the steps of patterning to form the fin type structure, performing selective ion implantation to realize P / N region doping, and transferring and bonding the light-emitting unit in a huge amount. High-performance driving and sensing functions are integrated on a single chip through a GaN fin type structure, the problems of low performance, complex process and high cost in the prior art are solved, and integrated fusion of display and sensing is achieved.

A solar cell, a preparation method thereof, a photovoltaic module, and a photovoltaic system, wherein the solar cell includes a substrate and a first tunnel oxide layer and a passivation medium layer sequentially stacked on a first surface of the substrate. The first tunnel oxide layer is at least partially in contact with the first surface. The passivation medium layer includes at least a transparent conductive oxide layer.