496 results about "Conductive oxide" patented technology

The invention relates to the technical field of crystalline silicon solar cells, and particularly discloses a low parasitic absorption TOPCon solar cell which comprises an N-type silicon substrate, a boron emitter is arranged on the front surface of the N-type silicon substrate, a front passivation layer and an antireflection layer are arranged on the side face of the boron emitter, and a tunneling oxide layer is arranged on the back surface of the N-type silicon substrate. Hydrogenated lightly-doped polycrystalline silicon and hydrogenated heavily-doped polycrystalline silicon are arranged on the side surface of the tunneling oxide layer, and conductive oxide is arranged between the hydrogenated lightly-doped polycrystalline silicon and the hydrogenated heavily-doped polycrystalline silicon. According to the low parasitic absorption TOPCon solar cell provided by the invention, on the basis of a TOPCon cell, the thickened fluorine-doped tin oxide is used as the second conductive oxide layer by utilizing the transparent and conductive characteristics of the fluorine-doped tin oxide. Inward diffusion of phosphorus atoms can be effectively prevented during annealing, and inward diffusion of metal Ag can be limited during sintering. Thus, the thinned outer layer hydrogenated heavily doped Poly-Si is configured through the thickened fluorine-doped tin oxide, so that parasitic absorption is reduced.

The invention belongs to the field of heterojunction cells, and particularly discloses a heterojunction cell and a preparation method thereof, which are characterized in that heavily doped amorphous silicon is deposited in a corresponding area of a grid line electrode, so that high parasitic absorption, surface dangling bond and interface state density are reduced, and the open voltage and the efficiency of the heterojunction cell are improved. The main technical scheme of the invention is as follows: according to the heterojunction cell, grooves are formed in corresponding areas of grid line electrodes on the front surface and the back surface of an N-type silicon substrate; arranging an intrinsic amorphous silicon layer; the light doping P-type amorphous silicon layer is arranged on the front intrinsic amorphous silicon layer, the light doping N-type amorphous silicon layer is arranged on the back intrinsic amorphous silicon layer, the heavy doping P-type amorphous silicon layer is arranged in a groove corresponding area on the light doping P-type amorphous silicon layer, the heavy doping N-type amorphous silicon layer is arranged in a groove corresponding area on the light doping N-type amorphous silicon layer, and the light doping N-type amorphous silicon layer is arranged in a groove corresponding area on the light doping N-type amorphous silicon layer. The P-type doped amorphous silicon layer and the N-type doped amorphous silicon layer are respectively provided with a transparent conductive oxide layer, and the grid line electrodes are arranged on the transparent conductive oxide layers. The invention is mainly used for power generation.

A semiconductor device that includes a substrate, a crystalline bottom electrode layer on an upper side of the semiconductor substrate, a conductive crystalline metal layer above the crystalline bottom electrode layer, and a conductive oxide layer above the conductive crystalline metal layer. The conductive oxide layer has a low resistance. The semiconductor device also includes a magnetic tunnel junction (MTJ) above the conductive crystalline metal layer, the MTJ including a tunnel barrier layer, a free layer on a first side of the tunnel barrier layer and a reference layer on a second side of the tunnel barrier layer opposite the first side.

The invention discloses a perovskite solar cell module based on insulation layer protection and a packaging process optimization method thereof, through adding an insulation protection layer on the surface of a metal electrode layer and combining a specific deposition process and a packaging process, the risk of short circuit is effectively avoided, and the stability of the cell module is improved at the same time. The perovskite solar cell module sequentially comprises a glass substrate, a transparent conductive oxide layer, a first functional layer, a perovskite layer, a second functional layer, a metal electrode layer, an insulating layer, an adhesive film and a packaging cover plate from bottom to top, and efficient packaging is realized by optimizing laser scribing and insulating layer deposition processes. According to the invention, the long-term stability and the electrical performance of the perovskite assembly are obviously improved, and the perovskite assembly has a wide application prospect.

The invention discloses a group III chloride ex-situ doped cadmium telluride thin film solar cell and a preparation method thereof, and the cadmium telluride thin film solar cell comprises a substrate layer, a transparent conductive oxide thin film layer, a high-resistance buffer layer, a cell window layer, a cell layer, a back contact layer and a back electrode layer which are sequentially arranged from bottom to top. The cell layer comprises an absorption layer and a IIICl3 layer coated on the upper surface of the cell window layer, and IIICl3 is chloride of the III main group element. According to the III-group chloride ex-situ doping method provided by the invention, the III-group chloride can be dissolved in an organic solution, room-temperature solution deposition is allowed, III-group cations are easy to diffuse at a relatively low annealing temperature, and a complex annealing process is not needed to activate a dopant; through a simple solution process and low-temperature activation, efficient doping of the CdTe absorption layer is effectively realized, and the open-circuit voltage and the overall photoelectric conversion efficiency of the cell are remarkably improved.

A visibly transparent sheet (200) and a coating for a transparent substrate (201), the coating comprising: - a first film comprising: a first stacked layer mirror film configured to reflect light in an infrared range of light and to transmit light in a visible range of light, or a first transparent conductive oxide film, - a set of structures (112) arranged in a pattern on the first film, separated by recesses (111) comprising one or more empty first unit cells (111a), each structure comprising one or more second unit cells (112a), the first and second unit cells having identical shapes and sizes, - wherein each second unit cell comprises a second layer structure comprising: a second stacked layer structure comprising at least a third dielectric layer, a fourth dielectric layer, and a second metal layer arranged between the third and fourth dielectric layers, or a second transparent conductive oxide layer. An active coating incorporating switchable materials is also proposed, enabling dynamic control over various properties. This coating facilitates the modulation of infrared transmission, reflection, or absorption of solar light in response to changing ambient conditions.

The invention belongs to the photovoltaic field, and particularly relates to a perovskite / tunneling oxide layer passivation contact laminated solar cell and a preparation method thereof. The perovskite / tunneling oxide layer passivation contact laminated solar cell comprises a tunneling layer prepared by adopting an electron beam evaporation method, wherein the tunneling layer is a transparent metal conductive oxide. The photoelectric conversion efficiency of the perovskite / tunneling oxide layer passivation contact laminated solar cell is improved.

The invention discloses a low-melting-point glass-based inorganic anticorrosive coating with excellent conductivity and a preparation method of the low-melting-point glass-based inorganic anticorrosive coating. The inorganic anticorrosive conductive coating material comprises 80-99.5 parts of a glass base material and 0.5-20 parts of conductive phase powder dispersed in the glass base material, wherein the conductive phase powder adopts a conductive oxide; the preparation process comprises the following steps: 1) mixing glass base materials; 2) melting into molten glass; 3) crushing and introducing a conductive phase; 4) sintering into blocks; 5) crushing and screening the sample; (6) preparing slurry; (7) paint spraying; and 8) sintering and cooling to obtain the paint. The method is simple in process, low in cost, corrosion-resistant, high-temperature-resistant and good in conductivity; after the conductive phase is added, the surface resistivity of the coating is reduced to 102-109 ohms, and the minimum value of the surface resistivity is far higher than that of an existing system.

The invention discloses a hole transport layer, a preparation method thereof and a solar cell. The hole transport layer comprises an SAM (single self-assembled monomolecular layer) material and a buried material, and the buried material comprises F-type phosphate group-containing molecules. According to the invention, the technical problems of poor coverage of a hole transport material SAM on a transparent conductive oxide (TCO) substrate and weak transmission capability in a perovskite cell or a laminated cell in the prior art can be solved. The hole transport layer is more uniform, the interface transmission loss is smaller, and the filling factor and the conversion efficiency are remarkably improved when the hole transport layer is used for the solar cell.

The invention relates to the technical field of solar cells, in particular to a silicon heterojunction solar cell and a preparation method thereof, a dielectric anti-reflection passivation layer and a functional layer are arranged on a light receiving surface of a substrate side by side, a front transparent conductive oxide layer is arranged on the functional layer, a front electrode is arranged on the front transparent conductive oxide layer, and a back electrode is arranged on the back transparent conductive oxide layer. The front transparent conductive oxide layer is wider than the front electrode. The dielectric antireflection passivation layer is arranged in a large area, the passivation effect similar to that of the functional layer is provided through the high thickness, transverse transmission of carriers is greatly reduced through the dielectric property of the dielectric antireflection passivation layer, the area of the functional layer can be reduced, and therefore the use area of the front transparent conductive oxide layer is reduced.

The invention relates to the technical field of solar cells, in particular to a back contact cell and a photovoltaic module. The back contact battery comprises a semiconductor substrate, the semiconductor substrate is provided with a front face and a back face which are oppositely arranged, and a side face is arranged between the front face and the back face in a surrounding mode; emitter electrodes and base electrode contact regions are alternately distributed on the back surface, isolation regions are arranged between the emitter electrodes and the base electrode contact regions, positive electrodes are arranged on the emitter electrodes, and negative electrodes are arranged on the base electrode contact regions; a passivation layer is arranged on the front face of the semiconductor substrate, a first transparent conductive oxide layer is arranged on the side, away from the semiconductor substrate, of the passivation layer, and the first transparent conductive oxide layer is electrically connected with at least one emitting electrode. The back contact battery provided by the embodiment of the invention has good anti-PID (Proportion Integration Differentiation) performance.

The invention provides a method for testing the contact resistance of a solar cell film, which comprises the following steps of: preparing a plurality of multi-layer stacked test samples with different thicknesses, and alternately depositing an amorphous silicon film and a transparent conductive oxide film on a glass substrate of each sample to form a horizontal laminated structure; respectively arranging silver electrodes on the left side and the right side of each sample for performing voltage-current volt-ampere test, and recording the total resistance of each sample in a specified voltage range and the change condition of the total resistance along with the thickness of the film layer; electrode contact resistance is measured and deducted; reversely deducing the resistance value when the thickness of the film layer is 0 through an extrapolation method to obtain the contact resistance between the film layers; and calculating the contact resistance of a single interface according to the number of contact interfaces of the amorphous silicon film and the transparent conductive oxide film in the sample. The method is suitable for a test system under different manufacture procedures and thickness changes, and quantitative extraction of the contact resistance between the amorphous silicon and the TCO is achieved.

The present invention relates to an all-solid-state battery positive electrode active material comprising: an inner core comprising a layered lithium transition metal oxide; and a coating layer disposed on the inner core and including a lithium ion conductive oxide; a secondary particle formed by aggregating a plurality of primary particles, the primary particles having a flake or needle shape and an average thickness of 50 nm or less; in X-ray diffraction spectrum analysis, the peak width at half maximum (FWHM) (110) of the (110) plane diffraction peak is 0.2 or less.

The application discloses a preparation of a low-temperature and low-bombardment transparent conductive film and application of the transparent conductive film in a perovskite / crystalline silicon laminated solar cell. The composite film is prepared by magnetron sputtering of TCO ceramic targets with different doping ratios at room temperature. ‑5 The composite transparent conductive oxide film is obtained by adjusting the sputtering pressure and power of the TCO film with different doping ratios and adjusting different growth modes, and the composite transparent conductive oxide film has a low-temperature and low-bombardment property. The lower layer of the composite transparent conductive oxide film is in a columnar crystal growth mode, and the upper layer is in an equiaxed large-grain growth mode. The composite transparent conductive oxide film can be applied in a perovskite / silicon laminated solar cell, can promote the vertical and horizontal transmission capacity of carriers in a TCO transparent electrode, promotes the effective collection and transmission of carrier charges, and thus a high-efficiency perovskite / silicon laminated solar cell is obtained.

The invention provides a back contact solar cell and a photovoltaic module, the back contact solar cell comprises a silicon substrate, and the back surface of the silicon substrate comprises first areas and second areas which are alternately arranged; the first area and the second area are both provided with discontinuous fine grids extending in the first direction, and each fine grid corresponds to a plurality of discontinuous areas; the back contact solar cell also comprises a plurality of main grids extending along a second direction; the discontinuous area is covered with an insulation structure, the lower portion of the insulation structure corresponds to a transparent conductive oxide layer of the back contact solar cell, and the main grid penetrates through the discontinuous area and is insulated from the transparent conductive oxide layer through the insulation structure. According to the invention, the grid line structure of the HTBC battery is optimized, and the reliability of the HTBC battery is improved while the manufacturing cost is reduced.

The invention discloses a gallium-cerium co-doped ITO target material and a preparation method thereof, and belongs to the field of transparent conductive oxide ceramic target materials, and the preparation method comprises the following steps: weighing indium oxide powder raw materials, tin oxide powder raw materials, gallium oxide powder raw materials and cerium oxide powder raw materials in proportion, and performing pretreatment; the raw material powder is subjected to independent ball milling till the raw materials reach the preset particle size; mixing the four kinds of slurry, and continuously performing ball milling to obtain uniform mixed slurry; adding a binder into the mixed slurry, and carrying out ball milling and mixing to form stable formed slurry; carrying out spray granulation on the formed slurry to obtain spherical precursor powder; pressing and forming the precursor powder to obtain a biscuit, then putting the biscuit into a sintering furnace, carrying out stepped sintering in an oxygen atmosphere, and naturally cooling to obtain the gallium-cerium co-doped ITO target material. According to the gallium-cerium co-doped ITO target material prepared by the method, the relative density is greater than or equal to 99.4%, the resistivity is less than or equal to 99.4%, and the three-point bending strength is greater than or equal to 230MPa.

The embodiment of the invention provides a back contact crystalline silicon solar cell and a back contact photovoltaic module, the back contact crystalline silicon solar cell comprises a crystalline silicon substrate, the back surface of the crystalline silicon substrate is alternately provided with a first region and a second region, and the first region comprises a current collection region and a lamination region; in the collector region, the back surface of the crystalline silicon substrate is sequentially provided with a doped internal expansion layer, a first interface passivation layer, an N-type doped polycrystalline silicon layer, a transparent conductive oxide layer and a first back electrode, and a plurality of protruding structures are distributed on the surface of the N-type doped polycrystalline silicon layer. The contact area between the protruding structure and the first back electrode through the transparent conductive oxide layer is increased, so that the transmission resistance loss of carriers transported from the crystalline silicon substrate to the first back electrode is reduced, and the photoelectric conversion efficiency of the back contact crystalline silicon solar cell is improved.

The application relates to a coated glass and a laminated glass, the coated glass comprising a first glass sheet and a low-emissivity stack arranged on at least one surface of the first glass sheet, the low-emissivity stack comprising at least one transparent conductive oxide layer and at least one visible light blocking layer, the at least one visible light blocking layer being arranged on a side of the at least one transparent conductive oxide layer away from the first glass sheet, the at least one visible light blocking layer having a total physical thickness greater than 10 nm; the first glass sheet having a visible light transmittance TL1, the coated glass having a visible light transmittance TL2, TL1 and TL2 satisfying TL2 / TL1<=0.4. The coated glass can ensure low emissivity and low visible light transmittance, realize low visible light reflectivity, and make the prepared laminated glass have neutral color and lower manufacturing cost.

A solar cell can include a first transparent conductive oxide (TCO) layer proximate to a first charge transport layer; a second TCO layer proximate to a second charge transport layer; a perovskite layer disposed between first and second charge transport layers; a first plurality of electrically conductive lines disposed between the first TCO layer and the first charge transport layer, and / or a second plurality of electrically conductive lines disposed between the second TCO layer and second charge transport layer.

Provided is a transparent conductive film that makes it possible to achieve a low resistance value by maintaining low resistivity even when the film thickness of a transparent electrode layer comprising a conductive oxide is increased.　The present invention pertains to a transparent conductive film 1 in which a transparent electrode layer 40 containing indium oxide as a main component is formed on a substrate 30, wherein the transparent electrode layer 40 has a film thickness of 80 nm or more, and the peak intensity ratio I30.2 / I30.4 of the peak intensity I30.2 of 2θ = 30.2° and the peak intensity I30.4 of 2θ = 30.4° in an X-ray diffraction result in which the background is not removed from the X-ray diffraction pattern is 0.8 or less.

The invention discloses an HJT solar cell based on a metal grid copper electrode, which comprises an N-type monocrystalline silicon substrate, the front surface and the back surface of the N-type monocrystalline silicon substrate are respectively textured, an I-type amorphous silicon layer and a P-type amorphous silicon layer are sequentially laminated on the front surface of the N-type monocrystalline silicon substrate, and an I-type amorphous silicon layer and an N-type amorphous silicon layer are sequentially laminated on the back surface of the N-type monocrystalline silicon substrate; the surface of the P-type amorphous silicon layer and the surface of the N-type amorphous silicon layer are both covered with transparent conductive oxide layers, the transparent conductive oxide layers are coated with transparent conductive colloid layers, the transparent conductive colloid layers comprise transparent resin binders and conductive substances dispersed in the transparent resin binders, and metal grid copper electrodes are arranged on the transparent conductive colloid layers; through precise design of the line width and the spacing of the metal grid copper electrode, the shading rate can be reduced to the maximum extent while low square resistance and efficient current collection can be ensured, and the requirements of scenes such as building integrated photovoltaic and the like for high-light-transmittance and low-resistance electrodes are met.

The invention provides a composite seed layer and a copper gate heterojunction battery, and relates to the technical field of battery manufacturing. The metal oxide intermediate layer is introduced into the traditional metal seed layer, so that the problem of insufficient adhesive force between the pure metal seed layer and the transparent conductive oxide film in the prior art is effectively solved. The metal oxide intermediate layer can form a more stable interface with the transparent conductive oxide film, and the overall adhesive force of the composite seed layer is remarkably enhanced, so that the stripping or layering phenomenon possibly occurring in the subsequent copper electroplating process is avoided. Besides, the structure also inhibits the erosion of a process solution in an electroplating or cleaning process, thereby improving the conversion efficiency and long-term reliability of the copper gate heterojunction cell, and overcoming the problems of unstable cell performance and low yield caused by performance defects of the seed layer in the prior art.

The invention relates to the technical field of batteries, in particular to a processing method of a back-polished suede-like heterojunction battery rework piece and application of the back-polished suede-like heterojunction battery rework piece. The processing method comprises the following steps: S1, if a transparent conductive oxide film layer exists on the surface of a reworked piece, removing the transparent conductive oxide film layer by acid pickling; s2, performing alkaline micro-corrosion secondary texturing treatment on the reworked wafer treated in the step S1 so as to selectively remove an amorphous silicon functional layer, modifying a front pyramid textured surface so as to reduce the reflectivity, and enabling the reflectivity reduction amount of a back-like back-polished structure to be less than or equal to 3.5%; and S3, carrying out cleaning and surface rounding treatment on the silicon substrate after secondary texturing. According to the method, high-efficiency, low-loss and low-cost reworking treatment is realized while the integrity of the similar back-polished differentiated suede structure is guaranteed, and a key technical support is provided for large-scale manufacturing of the thin-sheet heterojunction solar cell.

A method for manufacturing a semiconductor structure includes: depositing atomic layers of tin monoxide along a vertical direction; patterning the atomic layers of tin monoxide into a channel unit; forming a first conducting oxide unit that is connected to the channel unit; forming a second conducting oxide unit that is connected to the channel unit and that is spaced apart from the first conducting oxide unit so as to permit charge carriers to be transmitted between the first conducting oxide unit and the second conducting oxide unit through the patterned atomic layers in the channel unit along the vertical direction; forming a gate dielectric over the channel unit, the first and second conducting oxide units; forming a metal gate over the gate dielectric; recessing the metal gate to expose the gate dielectric; and partially removing the gate dielectric to expose at least the first conducting oxide unit.

The present disclosure provides a composite particle, a multilayer ceramic capacitor, and a method for manufacturing the multilayer ceramic capacitor. The composite particle according to an embodiment of the present disclosure comprises: a conductive core; a conductive oxide layer disposed on the conductive core and including a metal oxide; and a coating layer disposed on the conductive oxide layer and including glass.

The invention provides a battery stringing method and device, and the method comprises the steps: S1, providing a battery piece, and enabling the number of thin grid lines on the front surface of the battery piece to be smaller than the number of thin grid lines on the back surface of the battery piece; s2, applying a first glue point to each welding strip layout path on the front surface of the battery piece; s3, arranging the battery pieces with the first glue points and the welding strip groups according to a string arrangement rule, welding the welding strip groups, and bonding the welding strip groups to the corresponding battery pieces through the first glue points to obtain battery strings; and S4, respectively applying second glue points on the solder strip groups on the front surface and the back surface of the battery string so as to reinforce the connection between the solder strip groups and the battery pieces through the second glue points. As the number of the first glue points on the front surface of the cell is small and the back surface is not provided with the glue points, on one hand, the shielding area of the glue points on the conductive oxide film on the cell is greatly reduced, so that the cell and the solder strip group form better conductive contact, and on the other hand, the problem that the glue points are easy to cover the back surface fine grid lines during back surface gluing is also avoided.

A kind of transverse perovskite solar cell, including transparent conductive layer, hole transport layer, perovskite absorption layer, electron transport layer and back electrode layer arranged in sequence;Back electrode layer is the composite structure of transparent conductive oxide layer and active metal layer;Electron transport layer is fullerene electron transport layer;Transverse perovskite solar cell further includes buffer layer, buffer layer is located between electron transport layer and back electrode layer, and buffer layer is molybdenum-doped indium oxide layer.Using molybdenum-doped indium oxide as buffer layer, compared with traditional tungsten-doped indium oxide, in the top electron collection interface of transverse perovskite solar cell, better energy level matching, more superior low-temperature electrical performance, stronger interface stability and wider process window are realized.

The present invention relates to a window pane with an emissivity-reducing coating, comprising at least a glass pane (2) and an emissivity-reducing coating (10) on a surface of the glass pane (2), wherein the emissivity-reducing coating (10), starting from the surface of the glass pane (2), comprises, in the following order, an electrically conductive layer (13) based on a transparent conductive oxide, a dielectric upper antireflection layer (15) with a refractive index of at most 1.6, and a DLC layer (16), wherein the dielectric upper antireflection layer (15) is arranged immediately adjacently to the DLC layer (16).

The invention relates to a self-assembled conductive phase of an anode catalyst layer and a preparation method thereof, the self-assembled conductive phase is conductive oxide particles and a thiol wrapping layer wrapping the outer surface, when the loading capacity of a catalyst is reduced, discontinuous catalysts in the catalyst layer can be bridged, and the self-assembled conductive phase has good self-assembled performance. And the utilization rate of the catalyst and the conductivity of the catalyst layer in-plane direction are improved. When the self-assembled conductive polymer prepared by the invention is applied to an anode catalyst layer of a proton exchange membrane electrolysis water membrane electrode, compared with a control group, the performance of the membrane electrode is improved by 26.8% at 2V, and the electrochemical active area is increased by 33%.

This invention relates to a thermoplastic composition comprising: a) 20 to 90 wt% of a thermoplastic resin, b) a laser-direct structuring additive, c) optionally, ceramic filler particles without laser-direct structuring additive function, and d) 0.1 to 5.0 wt% of an acid-modified polymer, wherein b) comprises b1) a conductive metal oxide, wherein the conductive oxide has a maximum of 5 x 10⁻⁶ ppm. 3 The resistivity is Ω·cm, and it contains at least a metal of Group n and Group (n+1) of the periodic table, where n is an integer from 3 to 13, and / or b2) calcium copper titanate.