1827 results about "Conductive oxide" patented technology

A thin film transistor (TFT), a method of manufacturing the TFT, and a flat panel display comprising the TFT are provided. The TFT includes a gate, a gate insulating layer that contacts the gate, a channel layer that contacts the gate insulating layer and faces the gate with the gate insulating layer therebetween, a source that contacts an end of the channel layer; and a drain that contacts an other end of the channel layer, wherein the channel layer is an amorphous oxide semiconductor layer, and each of the source and the drain is a conductive oxide layer comprising an oxide semiconductor layer having a conductive impurity in the oxide semiconductor layer. A low resistance metal layer can further be included on the source and drain. A driving circuit of a unit pixel of a flat panel display includes the TFT.

A memory using a mixed valence conductive oxides. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion.

An annular metal layer is provided between a conductive oxide layer and a dielectric mirror in a vertical cavity surface emitting laser. The annular metal layer defines the output window for the laser cavity which matches the TEM.sub.00 fundamental mode of the light beam emitted by the active region of the VCSEL. The metal layer outside the output window provides modal reflectivity discrimination against high order transverse modes of the light beam emitted by the active region of the VCSEL.

A personal electronic device includes a programmable display and a programmable keypad, wherein at least one of the programmable display and the programmable keypad includes a capacitive touch sensor and an EL panel in a unitary structure. A conductive layer shields the capacitive touch sensor from the EL panel and can be a separate layer or be incorporated into either the capacitive sensor or the EL panel. The conductive layer includes antimony tin oxide (ATO), other conductive oxide, or a conductive polymer, such as Orgacon™ 3010.

Reversible electrochemical mirror (REM) devices typically comprise a conductive oxide mirror electrode that is substantially transparent to radiation of some wavelengths, a counter electrode that may also be substantially transparent, and an electrolyte that contains ions of an electrodepositable metal. A voltage applied between the two electrodes causes electrodeposition of a mirror deposit on the mirror electrode and dissolution of the mirror deposit on the counter electrode, and these processes are reversed when the polarity of the applied voltage is changed. Such REM devices provide precise control over the reflection and transmission of radiation and can be used for a variety of applications, including smart windows and automatically adjusting automotive mirrors. According to the present invention, measurements of the sheet resistance of the mirror electrode in a REM device are correlated with the thickness of electrodeposited mirror metal and can be used to monitor the reflectance of the device. Sheet resistance measurements can be performed while the mirror state of the device is being switched if adequate isolation between the measurement and switching circuits is provided. This can be accomplished by use of external resistors or more sophisticated circuitry, or by taking advantage of the relatively high sheet resistance of the mirror electrode itself. Monitoring the reflectance of REM devices according to this invention provides significant cost and performance advantages.

This invention relates to a front electrode/contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of a photovoltaic device or the like includes a multilayer coating including at least one transparent conductive oxide (TCO) layer (e.g., of or including a material such as tin oxide, ITO, zinc oxide, or the like) and/or at least one conductive substantially metallic IR reflecting layer (e.g., based on silver, gold, or the like). In certain example instances, the multilayer front electrode coating may include one or more conductive metal(s) oxide layer(s) and one or more conductive substantially metallic IR reflecting layer(s) in order to provide for reduced visible light reflection, increased conductivity, cheaper manufacturability, and/or increased infrared (IR) reflection capability. At least one of the surfaces of the front glass substrate may be textured in certain example embodiments of this invention.

This invention relates to a front electrode/contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of a photovoltaic device or the like includes a multilayer coating including at least one transparent conductive oxide (TCO) layer (e.g., of or including a material such as tin oxide, ITO, zinc oxide, or the like) and/or at least one conductive substantially metallic IR reflecting layer (e.g., based on silver, gold, or the like). In certain example instances, the multilayer front electrode coating may include one or more conductive metal(s) oxide layer(s) and/or one or more conductive substantially metallic IR reflecting layer(s) in order to provide for reduced visible light reflection, increased conductivity, cheaper manufacturability, and/or increased infrared (IR) reflection capability.

A semiconductor light emitting device with improved efficiency in extracting light is provided. The semiconductor light emitting device comprises a first conductive type semiconductor layer, a light emitting layer, and a second conductive semiconductor layer stacked in this order, electrodes respectively connected to the first and second conductive semiconductor layers, the electrode connected to the second conductive type semiconductor layer comprising a lower conductive oxide film and an upper conductive oxide film disposed on the lower conductive oxide film, and a metal film disposed only on the upper conductive oxide film. The upper and lower conductive oxide films comprise an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg).

A multi-resistive state element that uses barrier electrodes is provided. If certain materials are used as electrodes, the electrodes can be used for multiple purposes. Oxides and nitrides are especially well suited for acting as a barrier layer, and possibly even an adhesion layer and a sacrificial layer.

The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode being adjacent to the source electrode with a gap therebetween; and a pixel electrode coupled to the drain electrode, wherein at least one of the gate line, the data line, and the drain electrode comprises a first conductive layer comprising a conductive oxide and a second conductive layer comprising copper (Cu).

An amorphous electrically conductive oxide such as In-Zn-O-containing amorphous oxide or amorphous ITO is used alone, or a laminate having a two- or three-layer structure constituted of the amorphous electrically conductive oxide and at least a thin metal layer is used, to form a transparent electrode whose side surface has a tapered form and whose top layer is formed of a layer of the above amorphous electrically conductive oxide, an organic single-layer portion or an organic multi-layer portion containing at least an organic light-emitting material is formed on the above transparent electrode, and further, an opposing electrode is formed on the above organic single-layer portion or the above organic multi-layer portion, whereby an organic EL device is obtained. A flattening layer is optionally provided so as to abut on the side surface of the transparent electrode for moderating a height-level difference between the above transparent electrode and the surface of the above substrate. Further, the above organic EL device is used to form an organic EL display panel.

This invention relates to a front electrode/contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of a photovoltaic device or the like includes a multilayer coating including at least one transparent conductive oxide (TCO) layer (e.g., of or including a material such as tin oxide, zinc oxide, or the like) and at least one conductive substantially metallic IR reflecting layer (e.g., based on silver, gold, or the like). In certain example instances, the multilayer front electrode coating may include a plurality of TCO layers and/or a plurality of conductive substantially metallic IR reflecting layers arranged in an alternating manner in order to provide for reduced visible light reflection, increased conductivity, and/or increased infrared (IR) reflection capability.

Certain example embodiments of this invention relate to an electrode (e.g., front electrode) for use in a photovoltaic device or the like. In certain example embodiments, a transparent conductive oxide (TCO) of the front electrode for use in a photovoltaic device is of or includes titanium oxide doped with one or more of Nb, Zn and/or Al. Additional layers may also be provided in the front electrode in certain example embodiments. It has been found that the use of transparent conductive TiO_x(:Nb) or TiZnO_x(:Al and/or Nb), in a front electrode of a photovoltaic device, is advantageous in that such materials have a high refractive index (n) and have a higher transparency than conventional titanium suboxide (TiO_x). Thus, the use of such materials in the context of a front electrode of a photovoltaic device reduces light reflection due to the high refractive index, and increases transmission into the active semiconductor film due to the higher transmission characteristics thereof, thereby improving the efficiency of the device.

This invention relates to a front electrode/contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of a photovoltaic device or the like includes a multilayer coating including at least one transparent conductive oxide (TCO) layer (e.g., of or including a material such as tin oxide, ITO, zinc oxide, or the like) and/or at least one conductive substantially metallic IR reflecting layer (e.g., based on silver, gold, or the like). In certain example instances, the multilayer front electrode coating may include one or more conductive metal(s) oxide layer(s) and one or more conductive substantially metallic IR reflecting layer(s) in order to provide for reduced visible light reflection, increased conductivity, cheaper manufacturability, and/or increased infrared (IR) reflection capability. In certain example embodiments, the front electrode acts as not only a transparent conductive front contact/electrode but also a short pass filter that allows an increased amount of photons having high energy (such as in visible and near infra-red regions of the spectrum) into the active region or absorber of the photovoltaic device.

A method of making a coated article including a transparent conductive oxide (TCO) film supported by a glass substrate is provided. In certain embodiments, the coated article including the TCO film on the glass substrate is thermally tempered in a tempering furnace with an inorganic protective film (e.g., of or including silicon nitride) being provided on the glass substrate over the TCO film during tempering in order to prevent or reduce oxidizing of the TCO during the tempering process. Since oxidizing of the TCO film during the tempering process is prevented or reduced, the TCO film is able to maintain its electrically conductivity, even after tempering.

One embodiment of the present invention provides a solar cell. The solar cell includes a photovoltaic structure, a transparent-conductive-oxide (TCO) layer situated above the photovoltaic structure, and a front-side metal grid situated above the TCO layer. The TCO layer is in contact with the front surface of the photovoltaic structure. The metal grid includes at least one of: Cu and Ni.

This invention relates to a front contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front contact of the photovoltaic device includes a low work-function transparent conductive oxide (TCO) of a material such as tin oxide, zinc oxide, or the like, and a thin high work-function TCO of a material such as oxygen-rich ITO (indium tin oxide) or the like. The high-work function TCO is located between the low work-function TCO and the uppermost semiconductor layer of the photovoltaic device so as to provide for substantial work-function matching between the low work-function TCO and the high work-function uppermost semiconductor layer of the device in order to reduce a potential barrier for holes extracted from the device by the front contact.

An electronic device on a plastic substrate, at least one side of the device being protected from reaction with or incorporation of moisture by a composite barrier. The composite barrier may contain, for example, multiple layers of transparent conductive oxide separated by one or more vacuum-evaporated in-situ polymerized organic layers, or may contain multiple barrier layers of transparent conductive oxide, transparent metal, or transparent conductive metal nitride, separated by at least one layer of organic dielectric polymer.

A cathode adapted for use in an organic optoelectronic device is provided. The cathode has an electron injection layer, an organic buffer layer, a conducting layer, and a transparent conductive oxide layer disposed, in that order, over the organic operative layers of the optoelectronic device. A method of fabricating the cathode is also provided.

A surface plasmon wavelength converter device includes a metallic film which has a plurality of nanofeatures. A wavelength conversion layer having a plurality of centers is disposed adjacent to the metallic film. The surface plasmon wavelength converter device is configured to respond to an incident electromagnetic radiation having a first wavelength by radiating away from the surface plasmon wavelength converter device an electromagnetic radiation having a second wavelength. A surface plasmon wavelength converter device having a metallic film and at least one center disposed in at least one of a plurality of nanofeatures of the metallic film is also described. A surface plasmon wavelength converter device having a transparent conductive oxide (TCO) film having a plurality of metallic nanofeatures, adjacent to a wavelength conversion layer, and a TCO film having a plurality of metallic nanofeatures with at least one center disposed therein is also described.

A semiconductor light emitting element includes an conductive oxide film containing at least one element selected from the group consisting of zinc, indium, tin, and magnesium that is electrically connected to the semiconductor layer. The conductive oxide film includes a plurality of voids in the vicinity of the interface with the semiconductor layer.

A thin film silicon solar cell for use in photovoltaic cells having a carrier substrate, a front transparent conductive oxide contact, a thin film silicon solar cell layer having at least one layer of hydrogenated microcrystalline silicon or nanocrystalline silicon, and a back contact having a transparent conductive oxide contact layer and a back reflective layer comprising a white pigmented dielectric reflective media.

A medical device comprising a least one photocatalytic layer or superhydrophilic layer. In some embodiments, the medical device comprises a waveguide. In some embodiments, the medical device comprises an electrode comprising an optically transparent conductive oxide. In some embodiments, the medical device comprises a electroluminescent layer. In some embodiments, the medical device comprises a photovoltaic cell. According to some embodiments, the medical device comprises a doped semiconductor oxide. A method for increasing the energy efficiency of a photocatalytic surface comprises electrically biasing a transparent conductive oxide layer. A method for illuminating a complex three-dimensional surface comprises illuminating a photocatalytic layer with electromagnetic radiation from an electroluminescent layer. A method for removing or preventing the formation of organic matter on a sensor window.

This invention relates to a front electrode or contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of the photovoltaic device includes a highly conductive metal film and a thin high work-function buffer layer. The high-work function buffer layer is located between the metal film and the uppermost semiconductor layer so as to provide for substantial work-function matching between the metal film and the high work-function uppermost semiconductor layer so as to reduce a potential barrier for holes extracted from the device by the front electrode/contact. Optionally, a layer such as a transparent conductive oxide (TCO) or a dielectric may be provided between a front glass substrate and the metal film.

A material of a gate electrode is a conductive oxide having a higher work function than that of conventionally used Pd and so on, thereby achieving a normally-off transistor without reducing the sheet carrier concentration of a heterojunction. It is thus possible to achieve a normally-off operation while reducing an increase in the specific on-state resistance.