254 results about "Conductive oxide" patented technology

The invention provides a back contact solar cell and a photovoltaic module, the back contact solar cell comprises a silicon substrate, and the back surface of the silicon substrate comprises first areas and second areas which are alternately arranged; the first area and the second area are both provided with discontinuous fine grids extending in the first direction, and each fine grid corresponds to a plurality of discontinuous areas; the back contact solar cell also comprises a plurality of main grids extending along a second direction; the discontinuous area is covered with an insulation structure, the lower portion of the insulation structure corresponds to a transparent conductive oxide layer of the back contact solar cell, and the main grid penetrates through the discontinuous area and is insulated from the transparent conductive oxide layer through the insulation structure. According to the invention, the grid line structure of the HTBC battery is optimized, and the reliability of the HTBC battery is improved while the manufacturing cost is reduced.

The invention discloses a gallium-cerium co-doped ITO target material and a preparation method thereof, and belongs to the field of transparent conductive oxide ceramic target materials, and the preparation method comprises the following steps: weighing indium oxide powder raw materials, tin oxide powder raw materials, gallium oxide powder raw materials and cerium oxide powder raw materials in proportion, and performing pretreatment; the raw material powder is subjected to independent ball milling till the raw materials reach the preset particle size; mixing the four kinds of slurry, and continuously performing ball milling to obtain uniform mixed slurry; adding a binder into the mixed slurry, and carrying out ball milling and mixing to form stable formed slurry; carrying out spray granulation on the formed slurry to obtain spherical precursor powder; pressing and forming the precursor powder to obtain a biscuit, then putting the biscuit into a sintering furnace, carrying out stepped sintering in an oxygen atmosphere, and naturally cooling to obtain the gallium-cerium co-doped ITO target material. According to the gallium-cerium co-doped ITO target material prepared by the method, the relative density is greater than or equal to 99.4%, the resistivity is less than or equal to 99.4%, and the three-point bending strength is greater than or equal to 230MPa.

The embodiment of the invention provides a back contact crystalline silicon solar cell and a back contact photovoltaic module, the back contact crystalline silicon solar cell comprises a crystalline silicon substrate, the back surface of the crystalline silicon substrate is alternately provided with a first region and a second region, and the first region comprises a current collection region and a lamination region; in the collector region, the back surface of the crystalline silicon substrate is sequentially provided with a doped internal expansion layer, a first interface passivation layer, an N-type doped polycrystalline silicon layer, a transparent conductive oxide layer and a first back electrode, and a plurality of protruding structures are distributed on the surface of the N-type doped polycrystalline silicon layer. The contact area between the protruding structure and the first back electrode through the transparent conductive oxide layer is increased, so that the transmission resistance loss of carriers transported from the crystalline silicon substrate to the first back electrode is reduced, and the photoelectric conversion efficiency of the back contact crystalline silicon solar cell is improved.

The application relates to a coated glass and a laminated glass, the coated glass comprising a first glass sheet and a low-emissivity stack arranged on at least one surface of the first glass sheet, the low-emissivity stack comprising at least one transparent conductive oxide layer and at least one visible light blocking layer, the at least one visible light blocking layer being arranged on a side of the at least one transparent conductive oxide layer away from the first glass sheet, the at least one visible light blocking layer having a total physical thickness greater than 10 nm; the first glass sheet having a visible light transmittance TL1, the coated glass having a visible light transmittance TL2, TL1 and TL2 satisfying TL2 / TL1<=0.4. The coated glass can ensure low emissivity and low visible light transmittance, realize low visible light reflectivity, and make the prepared laminated glass have neutral color and lower manufacturing cost.

Provided is a transparent conductive film that makes it possible to achieve a low resistance value by maintaining low resistivity even when the film thickness of a transparent electrode layer comprising a conductive oxide is increased.　The present invention pertains to a transparent conductive film 1 in which a transparent electrode layer 40 containing indium oxide as a main component is formed on a substrate 30, wherein the transparent electrode layer 40 has a film thickness of 80 nm or more, and the peak intensity ratio I30.2 / I30.4 of the peak intensity I30.2 of 2θ = 30.2° and the peak intensity I30.4 of 2θ = 30.4° in an X-ray diffraction result in which the background is not removed from the X-ray diffraction pattern is 0.8 or less.

The invention provides a composite seed layer and a copper gate heterojunction battery, and relates to the technical field of battery manufacturing. The metal oxide intermediate layer is introduced into the traditional metal seed layer, so that the problem of insufficient adhesive force between the pure metal seed layer and the transparent conductive oxide film in the prior art is effectively solved. The metal oxide intermediate layer can form a more stable interface with the transparent conductive oxide film, and the overall adhesive force of the composite seed layer is remarkably enhanced, so that the stripping or layering phenomenon possibly occurring in the subsequent copper electroplating process is avoided. Besides, the structure also inhibits the erosion of a process solution in an electroplating or cleaning process, thereby improving the conversion efficiency and long-term reliability of the copper gate heterojunction cell, and overcoming the problems of unstable cell performance and low yield caused by performance defects of the seed layer in the prior art.

The invention relates to the technical field of batteries, in particular to a processing method of a back-polished suede-like heterojunction battery rework piece and application of the back-polished suede-like heterojunction battery rework piece. The processing method comprises the following steps: S1, if a transparent conductive oxide film layer exists on the surface of a reworked piece, removing the transparent conductive oxide film layer by acid pickling; s2, performing alkaline micro-corrosion secondary texturing treatment on the reworked wafer treated in the step S1 so as to selectively remove an amorphous silicon functional layer, modifying a front pyramid textured surface so as to reduce the reflectivity, and enabling the reflectivity reduction amount of a back-like back-polished structure to be less than or equal to 3.5%; and S3, carrying out cleaning and surface rounding treatment on the silicon substrate after secondary texturing. According to the method, high-efficiency, low-loss and low-cost reworking treatment is realized while the integrity of the similar back-polished differentiated suede structure is guaranteed, and a key technical support is provided for large-scale manufacturing of the thin-sheet heterojunction solar cell.

The present disclosure provides a composite particle, a multilayer ceramic capacitor, and a method for manufacturing the multilayer ceramic capacitor. The composite particle according to an embodiment of the present disclosure comprises: a conductive core; a conductive oxide layer disposed on the conductive core and including a metal oxide; and a coating layer disposed on the conductive oxide layer and including glass.

A kind of transverse perovskite solar cell, including transparent conductive layer, hole transport layer, perovskite absorption layer, electron transport layer and back electrode layer arranged in sequence;Back electrode layer is the composite structure of transparent conductive oxide layer and active metal layer;Electron transport layer is fullerene electron transport layer;Transverse perovskite solar cell further includes buffer layer, buffer layer is located between electron transport layer and back electrode layer, and buffer layer is molybdenum-doped indium oxide layer.Using molybdenum-doped indium oxide as buffer layer, compared with traditional tungsten-doped indium oxide, in the top electron collection interface of transverse perovskite solar cell, better energy level matching, more superior low-temperature electrical performance, stronger interface stability and wider process window are realized.

The present invention relates to a window pane with an emissivity-reducing coating, comprising at least a glass pane (2) and an emissivity-reducing coating (10) on a surface of the glass pane (2), wherein the emissivity-reducing coating (10), starting from the surface of the glass pane (2), comprises, in the following order, an electrically conductive layer (13) based on a transparent conductive oxide, a dielectric upper antireflection layer (15) with a refractive index of at most 1.6, and a DLC layer (16), wherein the dielectric upper antireflection layer (15) is arranged immediately adjacently to the DLC layer (16).

This invention relates to a thermoplastic composition comprising: a) 20 to 90 wt% of a thermoplastic resin, b) a laser-direct structuring additive, c) optionally, ceramic filler particles without laser-direct structuring additive function, and d) 0.1 to 5.0 wt% of an acid-modified polymer, wherein b) comprises b1) a conductive metal oxide, wherein the conductive oxide has a maximum of 5 x 10⁻⁶ ppm. 3 The resistivity is Ω·cm, and it contains at least a metal of Group n and Group (n+1) of the periodic table, where n is an integer from 3 to 13, and / or b2) calcium copper titanate.

The invention relates to the technical field of solar cells, and mainly provides a solar cell and a preparation method thereof. The solar cell comprises a silicon substrate with a light incident surface and a backlight surface which are oppositely arranged; the first intrinsic amorphous silicon layer and the first doping layer are located on the light incident surface and are sequentially stacked in the direction away from the silicon substrate; wherein the first doping layer comprises a nanocrystalline silicon oxide layer; the second intrinsic amorphous silicon layer, the second doping layer and the second transparent conductive oxide layer are located on the backlight surface and sequentially stacked in the direction away from the silicon substrate; wherein the second doping layer comprises a first microcrystalline silicon oxycarbide layer, a second microcrystalline silicon oxycarbide layer and a third microcrystalline silicon oxycarbide layer which are sequentially stacked in the direction away from the silicon substrate. According to the technical scheme, the solar cell is beneficial to migration of carriers, and the current density and the photoelectric conversion efficiency of the solar cell can be improved.

The application discloses a full solid battery and a preparation method thereof, and a battery module. The full solid battery comprises a positive electrode sheet, a negative electrode sheet and a sulfide solid electrolyte layer between the positive electrode sheet and the negative electrode sheet which are arranged in a stack; the positive electrode sheet comprises a positive electrode current collector and a composite positive electrode layer on at least one side of the positive electrode current collector; wherein the composite positive electrode layer comprises a high-voltage oxide positive electrode main material, an oxide solid electrolyte, a conductive oxide and a sintering aid; the particles of the high-voltage oxide positive electrode main material, the oxide solid electrolyte and the conductive oxide are combined through sintering necks based on the sintering aid; the sintering aid comprises at least one of a metal element, an inorganic oxide, a metal fluoride, a metal nitride and a lithium-containing compound; the problems of poor physical contact and unstable chemical interface between the oxide positive electrode and the sulfide solid electrolyte are solved, and the safety performance of the battery is greatly increased.

Disclosed is an organic light emitting display device including a plurality of light emitting areas emitting light of different colors. The organic light emitting display device includes first to third pattern electrodes connected to driving elements, respectively; an organic light emitting structure disposed on the first to third pattern electrodes; a common electrode disposed on the organic light emitting structure; and a resonance control pattern disposed between the first pattern electrode and the organic light emitting structure, overlapping the first light emitting area, and including a conductive oxide. The organic light emitting structure includes a hole transport layer, an electron transport layer, and a light emitting layer disposed between the hole transport layer and the electron transport layer. The light emitting layer includes a common light emitting layer continuously extending within the organic light emitting structure, and a light emitting pattern overlapping the third pattern electrode.

The invention discloses a method for improving the photoelectric property of a transparent conductive oxide film and application, and belongs to the field of optoelectronic devices. The method comprises the following steps: growing a transparent conductive oxide film (TCO), a glass substrate or a silicon substrate by using a magnetron sputtering technology (or a reaction plasma deposition technology); and growing a gradient refractive index SiNyOx / SiOx thin film on the TCO thin film by using a radio frequency magnetron sputtering technology so as to construct the composite thin film (TCO / SiNyOx / SiOx) and improve the optical transmittance and the electrical stability of the TCO thin film. According to the invention, the optical and electrical properties of the transparent conductive oxide film can be improved, the transmission of the film is enhanced, the reflection is reduced, and the transparent conductive oxide film can be applied to crystalline silicon heterojunction solar cells or other optoelectronic devices and the like.

The invention relates to the technical field of photovoltaic cells, in particular to a photovoltaic cell and a photovoltaic module. The photovoltaic cell adopts a heterojunction structure, and the core is that TCO (Transparent Conductive Oxide) films are respectively arranged on the front surface and the back surface of a solar cell piece as transparent conductive film layers and are positioned on the outermost layer. A first light conversion layer containing first quantum dots is arranged outside the front transparent conductive film layer, and a second light conversion layer containing second quantum dots is arranged on the back; or the light conversion layers are added between the transparent conductive film layer and the corresponding electrodes. The first quantum dot comprises IIB-VIA family, and can absorb ultraviolet light and convert the ultraviolet light into visible light; the second quantum dot comprises IVA-VIA family and is used for absorbing infrared light and converting the infrared light into visible light. The design improves the utilization rate of ultraviolet and infrared light, reduces the conversion of the ultraviolet and infrared light into heat energy, reduces the working temperature, improves the photoelectric conversion efficiency and reliability, prolongs the service life, enables the cell to efficiently operate in a wider spectral range, and remarkably improves the overall performance.

The invention relates to the technical field of intelligent integrated devices, in particular to a vertical fin type display sensing module and a preparation method thereof.The module comprises a driving backboard and an anode on the driving backboard, the anode is provided with a semiconductor fin type structure, the semiconductor fin type structure comprises an n + GaN layer and a graphical n-GaN epitaxial layer, a protruding fin part with a notch is formed, and the n + GaN layer is arranged on the n + GaN layer. A P + region and a P + + region are formed by ion implantation on the side walls of the gap and the fin part, an N + region is formed at the top, a grid electrode is arranged on the P + + region, a metal layer and a transparent conductive oxide layer are arranged on the N + region, and a light-emitting unit is bonded on the transparent conductive oxide layer; the image sensing unit is overlapped with the projection of the fin type structure and comprises a light filtering layer and a micro lens. The preparation method comprises the steps of patterning to form the fin type structure, performing selective ion implantation to realize P / N region doping, and transferring and bonding the light-emitting unit in a huge amount. High-performance driving and sensing functions are integrated on a single chip through a GaN fin type structure, the problems of low performance, complex process and high cost in the prior art are solved, and integrated fusion of display and sensing is achieved.

A solar cell, a preparation method thereof, a photovoltaic module, and a photovoltaic system, wherein the solar cell includes a substrate and a first tunnel oxide layer and a passivation medium layer sequentially stacked on a first surface of the substrate. The first tunnel oxide layer is at least partially in contact with the first surface. The passivation medium layer includes at least a transparent conductive oxide layer.

The present application belongs to the field of perovskite / crystalline silicon tandem cells. Disclosed are a perovskite / crystalline silicon tandem cell and a preparation method therefor. The perovskite / crystalline silicon tandem cell comprises a bottom cell and a top cell, wherein the bottom cell uses a crystalline silicon wafer as a substrate, an interface passivation layer, a first doped silicon layer, a first transparent conductive oxide film layer and a metal conductive film layer are sequentially provided on the back surface of the bottom cell, and an interface passivation layer, a second doped silicon layer and an intermediate composite layer are sequentially provided on the front surface of the bottom cell; the top cell uses a perovskite light-absorbing layer as a light-absorbing layer, a first carrier transport layer is provided on the back surface, and a second carrier transport layer, a second transparent conductive oxide film layer and a metal grid line electrode are sequentially provided on the front surface; and an amorphous germanium layer is provided between the second doped silicon layer and the intermediate composite layer, thereby enhancing the tunneling conductivity between the second doped silicon layer and the intermediate composite layer, reducing the interfacial contact resistance, and improving the FF and conversion efficiency of the cell.

Pixels in an organic light-emitting diode (OLED) display may have optical cavities defined by a partially transparent cathode layer and a reflective anode structure. Light at a wavelength emitted by a pixel may form a standing wave between the anode and the cathode. The standing wave may have an upper antinode and a lower antinode. Pixels of different colors may have emissive layers aligned with different antinodes. The OLED layers for the pixels may include an electron transport layer that is doped with a low work function material. The cathode may include one or more layers of transparent conductive oxide and / or metal. The cathode may be shorted to a metal mesh and / or a conductive cutting structure to decrease resistance.

A semiconductor device includes: an oxide semiconductor layer extending in a first direction; a gate electrode overlapping the oxide semiconductor layer in a second direction intersecting the first direction; a gate insulating film provided between the gate electrode and the oxide semiconductor layer; a first conductive layer provided on the oxide semiconductor layer in the first direction and containing a conductive oxide; a second conductive layer provided on the first conductive layer in the first direction and containing a metal element; a first protective film in contact with a side surface of the second conductive layer; and a second protective film in contact with at least a part of a side surface or an upper surface of the first conductive layer. The first protective film and the second protective film each contain a material having an oxygen diffusion coefficient smaller than that of the second conductive layer.

The utility model provides an N-type TOPCon photovoltaic cell and photovoltaic equipment, and relates to the technical field of TOPCon cells, and the N-type TOPCon photovoltaic cell comprises an N-type substrate which comprises a light-facing surface and a backlight surface; a P-type diffusion layer, a first polycrystalline silicon layer and a first passivation contact layer are sequentially arranged on the light facing surface from inside to outside; a tunnel oxide layer, a second polycrystalline silicon layer and a second passivation contact layer are sequentially arranged on the backlight surface from inside to outside; wherein a conductive oxide layer is arranged on the outer side of the first passivation contact layer, and the conductive oxide layer is of a transparent curved surface structure, so that the technical problem of low light receiving rate of a PN junction on the surface of the cell in the prior art is solved, and the technical effects of improving the light receiving rate of a light-facing surface of the cell and improving the electric energy efficiency are achieved.

A transparent glazing article, comprising at least one glass substrate equipped, on at least one of its faces, with a coating consisting of a stack of thin layers, the coating comprising the following sequence of layers, with reference to the surface of the substrate: - a first layer comprising niobium nitride, - a layer comprising a transparent conductive oxide, - a second layer comprising niobium nitride, wherein the first and second layers comprising niobium nitride are in direct contact with the layer comprising a transparent conductive oxide.

A composite particle according to an embodiment of the present disclosure includes a conductive core, a conductive oxide layer disposed on the conductive core and including a metal oxide, and a coating disposed on the conductive oxide layer and including glass.

The application discloses a kind of little indium little silver silicon heterojunction solar cell, comprising: silicon substrate, intrinsic hydrogenated amorphous silicon a-Si:H (i) sequentially arranged in substrate front surface from inside to outside, phosphorus-doped nanometer silicon oxide film nc-SiO x :H (n), front transparent conductive oxide three-layer, reflection-reducing layer SiN x :H and front electrode, intrinsic hydrogenated amorphous silicon a-Si:H (i) sequentially arranged in substrate back surface from inside to outside, boron-doped nanometer silicon film nc-Si:H (p), back transparent conductive layer AZO and back electrode.The application overcomes the optical loss of ultra-thin ITO and reduces the use of indium, through the design of light-electricity cooperation, while significantly reducing the consumption of rare metal indium and noble metal silver, high conversion efficiency is maintained.

An electrode material is provided that provides an electrode for a fuel cell with excellent electrode performance and durability. The electrode material is any one of the following electrode materials (A) or (B): Electrode material (A): comprising a porous composite support and electrode catalyst particles supported on the porous composite support, the porous composite support comprising: a carbon support composed of mesoporous carbon; and an electronically conductive oxide fixed to at least the inner surface and outer surface of the micropores of the mesoporous carbon, wherein a portion or all of the electrode catalyst particles are supported within the micropores of the mesoporous carbon via the electronically conductive oxide. Electrode material (B): comprising a carbon support composed of mesoporous carbon; and an electrode catalyst composite fixed to at least the inner surface and outer surface of the micropores of the mesoporous carbon, wherein the electrode catalyst composite comprises electrode catalyst particles and an electronically conductive oxide, the electronically conductive oxide being present in a manner that fills the spaces between the electrode catalyst particles.

This application provides an array substrate and its fabrication method, a display panel, and a display device. The array substrate includes: a substrate comprising a display area; a plurality of pixel circuits arranged in an array, the pixel circuits being disposed in the display area; each pixel circuit including a first thin-film transistor and a second thin-film transistor, the first thin-film transistor being disposed on the side of the second thin-film transistor facing away from the substrate along a direction perpendicular to the substrate; at least one of the first and second thin-film transistors having a dual-channel region, the dual-channel region including a first conductive oxide layer and a second conductive oxide layer stacked along a direction perpendicular to the substrate. The array substrate of this application is advantageous for display panels to have a high PPI, low leakage current, and high mobility, thereby resulting in stable display performance and excellent low-grayscale image quality.

A method for preparing an oxide sputtering target and a method for forming a transparent conductive oxide thin film are disclosed. The method for preparing the oxide sputtering target includes the following steps: obtaining a mixture comprising metal oxides; introducing the mixture into a sintering furnace; and sintering the mixture in the following manner: simultaneously heating the mixture by introducing oxygen into the sintering furnace at a first flow rate; simultaneously heating the mixture by introducing oxygen into the sintering furnace at a second flow rate; and simultaneously heating the mixture by introducing oxygen into the sintering furnace at a third flow rate. The metal oxides consist only of In₂O₃ and GeO₂. The first heating is performed until the sintering atmosphere reaches any temperature within the range of 1050°C to 1150°C, and the second heating is performed until the sintering atmosphere reaches any temperature within the range of 1200°C to 1300°C. The first and third flow rates are greater than the second flow rate.

The utility model belongs to the technical field of evaporation mask carrier plate, especially relates to a perovskite crystalline silicon laminated solar cell top silver electrode evaporation mask carrier plate, include: silver plating carrier plate is equipped with a plurality of battery area for placing battery on the silver plating carrier plate, be equipped with transparent conductive oxide film surface on the battery area, be equipped with main shan on the transparent conductive oxide film surface, be equipped with a plurality of thin shan in main shan, the test hole is seted up in one side of main shan, firm fixation: ensure that the bottom battery is completely fixed in the evaporation process, avoid displacement. Nondestructive taking and placing: after evaporation, battery taking and placing operation is simple and convenient, and the risk of fragmentation is greatly reduced. Precise positioning: silver main grid line and thin grid line can be evaporated in the preset target area extremely accurately, ensure that grid line pattern accurately covers non - transparent or specified area, thereby maximum electron collection efficiency, effectively improve the overall performance of battery. Increase efficiency: support multiple battery synchronous evaporation.

Provided is a semiconductor device with a high operating speed. The present invention comprises: an oxide semiconductor; a first conductor and a second conductor that are separated from each other on the oxide semiconductor; a third conductor that is in contact with one portion of an upper surface of the first conductor; a fourth conductor that is in contact with one portion of an upper surface of the second conductor; a first insulator that is disposed on the third conductor and the fourth conductor and has an opening that overlaps a region between the third conductor and the fourth conductor; a second insulator that is disposed in the opening of the first insulator and is in contact with another portion of the upper surface of the first conductor and another portion of the upper surface of the second conductor; a third insulator that is disposed in the opening of the first insulator; and a fifth conductor that is disposed on the third conductor in the opening of the first insulator. The distance between the first conductor and the second conductor is smaller than the distance between the third conductor and the fourth conductor. The oxide semiconductor contains indium. The first conductor and the second conductor are both conductive oxides.