653 results about "Conductive oxide" patented technology

The invention relates to the technical field of solar cells, and mainly provides a perovskite solar cell and a preparation method thereof. The perovskite solar cell comprises a substrate, a transparent conductive oxide layer, an anchoring layer, a hole transport layer, a perovskite light absorption layer, an electron transport layer and a top electrode which are stacked in sequence, wherein the material of the anchoring layer comprises a metal oxide; and the material of the hole transport layer comprises a self-assembly molecular material. According to the perovskite solar cell in the technical scheme of the invention, the anchoring point of the SAM is enhanced, the long-term stability of the perovskite cell is improved, and the efficiency loss caused by local electric leakage is reduced.

The invention relates to the technical field of solar cells, and mainly provides a solar cell and a preparation method thereof. The preparation method of the solar cell comprises the following steps: providing a silicon substrate; sequentially forming a first transparent conductive oxide layer, a first sacrificial layer and a first metal seed layer on the first surface of the silicon substrate; forming a patterned first mask layer on the first metal seed layer to expose the first metal seed layer in the first metal region; depositing a metal material on the first metal seed layer in the first metal region by adopting an electroplating process to form a first metal electrode; completely removing the first mask layer and the first metal seed layer in the first non-metal region; wherein the first transparent conductive oxide layer is an acid-resistant transparent conductive oxide layer; the first sacrificial layer is a non-acid-resistant transparent conductive oxide layer. The solar cell provided by the technical scheme of the invention has good electrical performance, stability and photoelectric conversion rate.

The embodiment of the invention provides a perovskite solar cell, a preparation method thereof and a perovskite solar cell module. The perovskite solar cell comprises a substrate and a transparent conductive oxide layer, wherein the transparent conductive oxide layer is provided with a plurality of first regions and second regions which are arranged in a staggered manner; a first etching groove is formed in the transparent conductive oxide layer in the first region; the insulating protection layer is positioned in the first region; the first charge transport layer, the perovskite light absorption layer and the second charge transport layer are located in the second region; the second etching groove is positioned in the insulating protection layer; the electrode layer is positioned on the second charge transmission layer and the insulation protection layer and in the second etching groove; and the third etching groove is positioned in the electrode layer of the first region. According to the technical scheme of the invention, the insulation protection layer in the perovskite solar cell can protect the perovskite light absorption layer, reduces the damage of laser scribing to the perovskite light absorption layer, and improves the stability of a perovskite solar cell module.

The invention relates to the technical field of crystalline silicon solar cells, and particularly discloses a low parasitic absorption TOPCon solar cell which comprises an N-type silicon substrate, a boron emitter is arranged on the front surface of the N-type silicon substrate, a front passivation layer and an antireflection layer are arranged on the side face of the boron emitter, and a tunneling oxide layer is arranged on the back surface of the N-type silicon substrate. Hydrogenated lightly-doped polycrystalline silicon and hydrogenated heavily-doped polycrystalline silicon are arranged on the side surface of the tunneling oxide layer, and conductive oxide is arranged between the hydrogenated lightly-doped polycrystalline silicon and the hydrogenated heavily-doped polycrystalline silicon. According to the low parasitic absorption TOPCon solar cell provided by the invention, on the basis of a TOPCon cell, the thickened fluorine-doped tin oxide is used as the second conductive oxide layer by utilizing the transparent and conductive characteristics of the fluorine-doped tin oxide. Inward diffusion of phosphorus atoms can be effectively prevented during annealing, and inward diffusion of metal Ag can be limited during sintering. Thus, the thinned outer layer hydrogenated heavily doped Poly-Si is configured through the thickened fluorine-doped tin oxide, so that parasitic absorption is reduced.

The invention provides an intermediate layer structure for a solar cell and a preparation method and application thereof. The intermediate layer structure comprises a transparent conductive oxide layer, a self-assembled monomolecular hole transport layer and a self-assembled monomolecular connecting layer for connecting the transparent conductive oxide layer and the self-assembled monomolecular hole transport layer, the material of the self-assembled monomolecular hole transport layer is a self-assembled monomolecular material with a phosphonic acid end group; the material of the self-assembled monomolecular connecting layer is selected from one or two of a silane self-assembled monomolecular layer material or a carboxylic acid self-assembled monomolecular layer material, and the silane self-assembled monomolecular layer material and the carboxylic acid self-assembled monomolecular layer material have sulfydryl groups; the problems that in the prior art, the material coverage rate of a self-assembled monomolecular hole transport layer on a TCO is low, and the material distribution of the self-assembled monomolecular hole transport layer is not uniform are solved.

The invention belongs to the technical field of new materials, and discloses a method for preparing indium cerium oxide powder based on an electrochemical method, which comprises the following steps: by taking indium cerium alloy as an anode and an inert electrode as a cathode, carrying out electrolytic reaction in an alkaline electrolyte to generate an indium cerium hydroxide precipitate; the hydroxide precipitate is pyrolyzed after being washed, and indium cerium oxide powder is generated. According to the method, an electrolytic method is adopted for preparing mud of indium cerium hydroxide, the grain size of the mud is very small, in the precipitation reaction, the indium cerium hydroxide is evenly mixed, then pyrolysis is conducted, and the indium cerium oxide powder with good uniformity can be obtained. Meanwhile, the invention further provides the cerium indium oxide powder, the target material and the transparent conductive oxide film which are prepared on the basis of the method.

The invention belongs to the field of heterojunction cells, and particularly discloses a heterojunction cell and a preparation method thereof, which are characterized in that heavily doped amorphous silicon is deposited in a corresponding area of a grid line electrode, so that high parasitic absorption, surface dangling bond and interface state density are reduced, and the open voltage and the efficiency of the heterojunction cell are improved. The main technical scheme of the invention is as follows: according to the heterojunction cell, grooves are formed in corresponding areas of grid line electrodes on the front surface and the back surface of an N-type silicon substrate; arranging an intrinsic amorphous silicon layer; the light doping P-type amorphous silicon layer is arranged on the front intrinsic amorphous silicon layer, the light doping N-type amorphous silicon layer is arranged on the back intrinsic amorphous silicon layer, the heavy doping P-type amorphous silicon layer is arranged in a groove corresponding area on the light doping P-type amorphous silicon layer, the heavy doping N-type amorphous silicon layer is arranged in a groove corresponding area on the light doping N-type amorphous silicon layer, and the light doping N-type amorphous silicon layer is arranged in a groove corresponding area on the light doping N-type amorphous silicon layer. The P-type doped amorphous silicon layer and the N-type doped amorphous silicon layer are respectively provided with a transparent conductive oxide layer, and the grid line electrodes are arranged on the transparent conductive oxide layers. The invention is mainly used for power generation.

A semiconductor device that includes a substrate, a crystalline bottom electrode layer on an upper side of the semiconductor substrate, a conductive crystalline metal layer above the crystalline bottom electrode layer, and a conductive oxide layer above the conductive crystalline metal layer. The conductive oxide layer has a low resistance. The semiconductor device also includes a magnetic tunnel junction (MTJ) above the conductive crystalline metal layer, the MTJ including a tunnel barrier layer, a free layer on a first side of the tunnel barrier layer and a reference layer on a second side of the tunnel barrier layer opposite the first side.

The invention discloses a perovskite solar cell module based on insulation layer protection and a packaging process optimization method thereof, through adding an insulation protection layer on the surface of a metal electrode layer and combining a specific deposition process and a packaging process, the risk of short circuit is effectively avoided, and the stability of the cell module is improved at the same time. The perovskite solar cell module sequentially comprises a glass substrate, a transparent conductive oxide layer, a first functional layer, a perovskite layer, a second functional layer, a metal electrode layer, an insulating layer, an adhesive film and a packaging cover plate from bottom to top, and efficient packaging is realized by optimizing laser scribing and insulating layer deposition processes. According to the invention, the long-term stability and the electrical performance of the perovskite assembly are obviously improved, and the perovskite assembly has a wide application prospect.

The invention discloses a group III chloride ex-situ doped cadmium telluride thin film solar cell and a preparation method thereof, and the cadmium telluride thin film solar cell comprises a substrate layer, a transparent conductive oxide thin film layer, a high-resistance buffer layer, a cell window layer, a cell layer, a back contact layer and a back electrode layer which are sequentially arranged from bottom to top. The cell layer comprises an absorption layer and a IIICl3 layer coated on the upper surface of the cell window layer, and IIICl3 is chloride of the III main group element. According to the III-group chloride ex-situ doping method provided by the invention, the III-group chloride can be dissolved in an organic solution, room-temperature solution deposition is allowed, III-group cations are easy to diffuse at a relatively low annealing temperature, and a complex annealing process is not needed to activate a dopant; through a simple solution process and low-temperature activation, efficient doping of the CdTe absorption layer is effectively realized, and the open-circuit voltage and the overall photoelectric conversion efficiency of the cell are remarkably improved.

A visibly transparent sheet (200) and a coating for a transparent substrate (201), the coating comprising: - a first film comprising: a first stacked layer mirror film configured to reflect light in an infrared range of light and to transmit light in a visible range of light, or a first transparent conductive oxide film, - a set of structures (112) arranged in a pattern on the first film, separated by recesses (111) comprising one or more empty first unit cells (111a), each structure comprising one or more second unit cells (112a), the first and second unit cells having identical shapes and sizes, - wherein each second unit cell comprises a second layer structure comprising: a second stacked layer structure comprising at least a third dielectric layer, a fourth dielectric layer, and a second metal layer arranged between the third and fourth dielectric layers, or a second transparent conductive oxide layer. An active coating incorporating switchable materials is also proposed, enabling dynamic control over various properties. This coating facilitates the modulation of infrared transmission, reflection, or absorption of solar light in response to changing ambient conditions.

The invention belongs to the photovoltaic field, and particularly relates to a perovskite / tunneling oxide layer passivation contact laminated solar cell and a preparation method thereof. The perovskite / tunneling oxide layer passivation contact laminated solar cell comprises a tunneling layer prepared by adopting an electron beam evaporation method, wherein the tunneling layer is a transparent metal conductive oxide. The photoelectric conversion efficiency of the perovskite / tunneling oxide layer passivation contact laminated solar cell is improved.

The invention discloses a low-melting-point glass-based inorganic anticorrosive coating with excellent conductivity and a preparation method of the low-melting-point glass-based inorganic anticorrosive coating. The inorganic anticorrosive conductive coating material comprises 80-99.5 parts of a glass base material and 0.5-20 parts of conductive phase powder dispersed in the glass base material, wherein the conductive phase powder adopts a conductive oxide; the preparation process comprises the following steps: 1) mixing glass base materials; 2) melting into molten glass; 3) crushing and introducing a conductive phase; 4) sintering into blocks; 5) crushing and screening the sample; (6) preparing slurry; (7) paint spraying; and 8) sintering and cooling to obtain the paint. The method is simple in process, low in cost, corrosion-resistant, high-temperature-resistant and good in conductivity; after the conductive phase is added, the surface resistivity of the coating is reduced to 102-109 ohms, and the minimum value of the surface resistivity is far higher than that of an existing system.

The invention provides a preparation method and application of a cerium-doped indium oxide evaporation target material. Compared with the existing ITO target material for heterojunction and perovskite solar cells, the preparation method provided by the invention has the advantages that the resistivity of the target material is improved by doping the cerium element, and the relative density of the prepared target material is 59-64%. Meanwhile, the carbon powder is doped during mixing, so that the effects of controlling the porosity of the target material, improving the strength of the target material and optimizing the powder falling phenomenon of the target material are achieved. The invention also provides a transparent conductive oxide film containing the cerium-doped indium oxide evaporation target material and a photovoltaic solar cell.

The invention belongs to the technical field of photovoltaic target materials, and particularly relates to an indium titanium cerium niobium oxide ceramic target material, a preparation method and application thereof, and a transparent conductive oxide film. The indium titanium cerium niobium oxide ceramic target material comprises the following components: indium oxide, titanium oxide, cerium oxide and niobium oxide, the mass ratio of indium oxide to titanium oxide to cerium oxide to niobium oxide is 97-99: 1-0.3: 1-0.3: 1-0.2, the transparent conductive oxide film has high density, high purity and high strength, and the transparent conductive oxide film prepared from the transparent conductive oxide film has high carrier mobility, high conductivity and high light transmittance.

The invention discloses a hole transport layer, a preparation method thereof and a solar cell. The hole transport layer comprises an SAM (single self-assembled monomolecular layer) material and a buried material, and the buried material comprises F-type phosphate group-containing molecules. According to the invention, the technical problems of poor coverage of a hole transport material SAM on a transparent conductive oxide (TCO) substrate and weak transmission capability in a perovskite cell or a laminated cell in the prior art can be solved. The hole transport layer is more uniform, the interface transmission loss is smaller, and the filling factor and the conversion efficiency are remarkably improved when the hole transport layer is used for the solar cell.

The invention relates to the technical field of solar cells, in particular to a silicon heterojunction solar cell and a preparation method thereof, a dielectric anti-reflection passivation layer and a functional layer are arranged on a light receiving surface of a substrate side by side, a front transparent conductive oxide layer is arranged on the functional layer, a front electrode is arranged on the front transparent conductive oxide layer, and a back electrode is arranged on the back transparent conductive oxide layer. The front transparent conductive oxide layer is wider than the front electrode. The dielectric antireflection passivation layer is arranged in a large area, the passivation effect similar to that of the functional layer is provided through the high thickness, transverse transmission of carriers is greatly reduced through the dielectric property of the dielectric antireflection passivation layer, the area of the functional layer can be reduced, and therefore the use area of the front transparent conductive oxide layer is reduced.

The invention belongs to the technical field of photovoltaic manufacturing, and relates to a heterojunction solar cell and a preparation method and application thereof. The preparation method comprises the following steps: (1) depositing a first back intrinsic layer on any side surface of a silicon substrate; (2) sequentially depositing a front intrinsic layer and a front doped layer on the surface of the other side of the silicon substrate; (3) sequentially depositing a second back intrinsic layer and a back doping layer on the surface of the first back intrinsic layer; (4) respectively depositing transparent conductive oxide layers on the surfaces of the front doping layer and the back doping layer; and (5) respectively preparing electrodes on the surface of the transparent conductive oxide layer on the front surface and the surface of the transparent conductive oxide layer on the back surface to obtain the heterojunction solar cell. According to the preparation method disclosed by the invention, the backside intrinsic layer on the outermost side in contact with the backside doping layer is ensured not to be damaged, so that a low-resistance and stable tunneling contact solar cell structure is obtained, and the thermal attenuation reliability of the tunneling contact solar cell structure is also improved.

The invention relates to the technical field of solar cells, in particular to a back contact cell and a photovoltaic module. The back contact battery comprises a semiconductor substrate, the semiconductor substrate is provided with a front face and a back face which are oppositely arranged, and a side face is arranged between the front face and the back face in a surrounding mode; emitter electrodes and base electrode contact regions are alternately distributed on the back surface, isolation regions are arranged between the emitter electrodes and the base electrode contact regions, positive electrodes are arranged on the emitter electrodes, and negative electrodes are arranged on the base electrode contact regions; a passivation layer is arranged on the front face of the semiconductor substrate, a first transparent conductive oxide layer is arranged on the side, away from the semiconductor substrate, of the passivation layer, and the first transparent conductive oxide layer is electrically connected with at least one emitting electrode. The back contact battery provided by the embodiment of the invention has good anti-PID (Proportion Integration Differentiation) performance.

The invention provides a method for testing the contact resistance of a solar cell film, which comprises the following steps of: preparing a plurality of multi-layer stacked test samples with different thicknesses, and alternately depositing an amorphous silicon film and a transparent conductive oxide film on a glass substrate of each sample to form a horizontal laminated structure; respectively arranging silver electrodes on the left side and the right side of each sample for performing voltage-current volt-ampere test, and recording the total resistance of each sample in a specified voltage range and the change condition of the total resistance along with the thickness of the film layer; electrode contact resistance is measured and deducted; reversely deducing the resistance value when the thickness of the film layer is 0 through an extrapolation method to obtain the contact resistance between the film layers; and calculating the contact resistance of a single interface according to the number of contact interfaces of the amorphous silicon film and the transparent conductive oxide film in the sample. The method is suitable for a test system under different manufacture procedures and thickness changes, and quantitative extraction of the contact resistance between the amorphous silicon and the TCO is achieved.

The present invention relates to an all-solid-state battery positive electrode active material comprising: an inner core comprising a layered lithium transition metal oxide; and a coating layer disposed on the inner core and including a lithium ion conductive oxide; a secondary particle formed by aggregating a plurality of primary particles, the primary particles having a flake or needle shape and an average thickness of 50 nm or less; in X-ray diffraction spectrum analysis, the peak width at half maximum (FWHM) (110) of the (110) plane diffraction peak is 0.2 or less.

The invention relates to the technical field of solar cells, in particular to a preparation method of a perovskite thin film, which comprises the following steps: sequentially carrying out ultrasonic cleaning on etched transparent conductive glass by using a preset solution, drying in a forced air drying oven, and carrying out ultraviolet ozone treatment to obtain a transparent conductive oxide substrate; placing the transparent conductive oxide substrate in a glove box in a nitrogen atmosphere to prepare a hole transport layer; adding the perovskite precursor material into a corresponding solvent in a preset proportion, and then stirring and oscillating to obtain a perovskite precursor solution; and spin-coating the perovskite precursor solution on the hole transport layer by using a spin coater, dropwise adding an anti-solvent during spin-coating, and placing the obtained perovskite light absorption film layer on a heating stage for annealing after spin-coating is finished, the insulation metal oxide nanoparticles and the self-assembly monomolecular material are doped in the anti-solvent, so that the absorption of incident light by the perovskite thin film is improved, and the defect of the perovskite thin film at the grain boundary is passivated.

The application discloses a preparation of a low-temperature and low-bombardment transparent conductive film and application of the transparent conductive film in a perovskite / crystalline silicon laminated solar cell. The composite film is prepared by magnetron sputtering of TCO ceramic targets with different doping ratios at room temperature. ‑5 The composite transparent conductive oxide film is obtained by adjusting the sputtering pressure and power of the TCO film with different doping ratios and adjusting different growth modes, and the composite transparent conductive oxide film has a low-temperature and low-bombardment property. The lower layer of the composite transparent conductive oxide film is in a columnar crystal growth mode, and the upper layer is in an equiaxed large-grain growth mode. The composite transparent conductive oxide film can be applied in a perovskite / silicon laminated solar cell, can promote the vertical and horizontal transmission capacity of carriers in a TCO transparent electrode, promotes the effective collection and transmission of carrier charges, and thus a high-efficiency perovskite / silicon laminated solar cell is obtained.

A photovoltaic device includes a substrate, a semiconductor stack and a transparent tunnel junction. The semiconductor stack includes an n-type layer selected from a first transparent conductive oxide layer, or a window layer, or both; and a p-type absorber layer disposed on the n-type layer, wherein the absorber layer consists essentially of CdSexTe(1-x), wherein x is from 1 to about 40 at. %. The transparent tunnel junction comprises a transparent interface layer of CdyZn(1-y)Te doped to be p+type, and a transparent contact layer doped to be n+type, and the interface layer is disposed between the p-type absorber layer and the transparent contact layer. In bifacial embodiments, the tunnel junction forms a transparent back contact and electrode; and in multi-junction embodiments, the tunnel junction forms a diode-like connector between top and bottom cells. The transparent contact layer may comprise tin oxide or zinc oxide doped with aluminum, fluorine or indium. The photovoltaic device may also include an electron reflector layer and / or an optical reflector layer.

The invention provides a back contact solar cell and a photovoltaic module, the back contact solar cell comprises a silicon substrate, and the back surface of the silicon substrate comprises first areas and second areas which are alternately arranged; the first area and the second area are both provided with discontinuous fine grids extending in the first direction, and each fine grid corresponds to a plurality of discontinuous areas; the back contact solar cell also comprises a plurality of main grids extending along a second direction; the discontinuous area is covered with an insulation structure, the lower portion of the insulation structure corresponds to a transparent conductive oxide layer of the back contact solar cell, and the main grid penetrates through the discontinuous area and is insulated from the transparent conductive oxide layer through the insulation structure. According to the invention, the grid line structure of the HTBC battery is optimized, and the reliability of the HTBC battery is improved while the manufacturing cost is reduced.

The invention discloses a gallium-cerium co-doped ITO target material and a preparation method thereof, and belongs to the field of transparent conductive oxide ceramic target materials, and the preparation method comprises the following steps: weighing indium oxide powder raw materials, tin oxide powder raw materials, gallium oxide powder raw materials and cerium oxide powder raw materials in proportion, and performing pretreatment; the raw material powder is subjected to independent ball milling till the raw materials reach the preset particle size; mixing the four kinds of slurry, and continuously performing ball milling to obtain uniform mixed slurry; adding a binder into the mixed slurry, and carrying out ball milling and mixing to form stable formed slurry; carrying out spray granulation on the formed slurry to obtain spherical precursor powder; pressing and forming the precursor powder to obtain a biscuit, then putting the biscuit into a sintering furnace, carrying out stepped sintering in an oxygen atmosphere, and naturally cooling to obtain the gallium-cerium co-doped ITO target material. According to the gallium-cerium co-doped ITO target material prepared by the method, the relative density is greater than or equal to 99.4%, the resistivity is less than or equal to 99.4%, and the three-point bending strength is greater than or equal to 230MPa.

The embodiment of the invention provides a back contact crystalline silicon solar cell and a back contact photovoltaic module, the back contact crystalline silicon solar cell comprises a crystalline silicon substrate, the back surface of the crystalline silicon substrate is alternately provided with a first region and a second region, and the first region comprises a current collection region and a lamination region; in the collector region, the back surface of the crystalline silicon substrate is sequentially provided with a doped internal expansion layer, a first interface passivation layer, an N-type doped polycrystalline silicon layer, a transparent conductive oxide layer and a first back electrode, and a plurality of protruding structures are distributed on the surface of the N-type doped polycrystalline silicon layer. The contact area between the protruding structure and the first back electrode through the transparent conductive oxide layer is increased, so that the transmission resistance loss of carriers transported from the crystalline silicon substrate to the first back electrode is reduced, and the photoelectric conversion efficiency of the back contact crystalline silicon solar cell is improved.

The application relates to a coated glass and a laminated glass, the coated glass comprising a first glass sheet and a low-emissivity stack arranged on at least one surface of the first glass sheet, the low-emissivity stack comprising at least one transparent conductive oxide layer and at least one visible light blocking layer, the at least one visible light blocking layer being arranged on a side of the at least one transparent conductive oxide layer away from the first glass sheet, the at least one visible light blocking layer having a total physical thickness greater than 10 nm; the first glass sheet having a visible light transmittance TL1, the coated glass having a visible light transmittance TL2, TL1 and TL2 satisfying TL2 / TL1<=0.4. The coated glass can ensure low emissivity and low visible light transmittance, realize low visible light reflectivity, and make the prepared laminated glass have neutral color and lower manufacturing cost.

The invention provides Low-E coated glass and a preparation method thereof, and relates to the technical field of coated glass. The magnetron sputtering process is adopted for film coating, when the transparent conductive oxide located on the lower layer relative to the silver layer is sputtered, the oxygen flux of sputtering gas is improved, free oxygen is preset in the transparent conductive oxide layer, the top graphite film protection layer is arranged, the hydrophobicity and corrosion potential of the film layer are improved, and the abrasion resistance is improved. Heat treatment is carried out after film coating, so that preset free oxygen is diffused to a silver layer, a silver oxide micro-oxidation layer is formed, uniform distribution of the silver layer is promoted, the roughness of an Ag layer is reduced, and conductivity and transmittance are synchronously improved; the graphite layer is oxidized and removed, and stains and slight scratches on the surface of the graphite layer are eliminated together. Under the influence of heat treatment, the dielectric layers are regularly arranged, so that the compactness and surface hardness of the film are improved.

A solar cell can include a first transparent conductive oxide (TCO) layer proximate to a first charge transport layer; a second TCO layer proximate to a second charge transport layer; a perovskite layer disposed between first and second charge transport layers; a first plurality of electrically conductive lines disposed between the first TCO layer and the first charge transport layer, and / or a second plurality of electrically conductive lines disposed between the second TCO layer and second charge transport layer.