The present application relates to the technical field of target material preparation. Provided are a MOS target material, a preparation method therefor, and a thin-film
transistor. The preparation method comprises: subjecting a mixed
salt solution of In, Ga, and Sn ions, a precipitant, and a complexing agent to a
coprecipitation reaction, then performing cleaning and concentration to obtain a high-purity
indium gallium tin hydroxide colloid; subjecting the high-purity
indium gallium tin hydroxide colloid and an auxiliary agent to a
hydrothermal reaction, then performing cleaning and
drying to obtain a first
indium gallium tin oxide powder; calcining the first indium gallium
tin oxide powder to obtain a second indium gallium
tin oxide powder; subjecting the second indium gallium
tin oxide powder, a dispersant, a defoaming agent, and pure water to ball milling and mixing so as to obtain a
slurry; performing slip
casting using the
slurry to obtain a
green body; and
sintering the
green body under high-
oxygen conditions to obtain a MOS target material. The present application combines a
coprecipitation reaction, a
hydrothermal reaction, and
calcination, precisely controlling the
oxygen content of the powder and making the powder slightly
oxygen deficient, and preventing In2O3 from losing oxygen and generating In2O or InO during
sintering of the
green body and affecting the
conductivity of the target material.