480 results about "Oxygen deficient" patented technology

A thin film transistor structure in which a source electrode and a drain electrode formed from a metal material are in direct contact with an oxide semiconductor film may lead to high contact resistance. One cause of high contact resistance is that a Schottky junction is formed at a contact plane between the source and drain electrodes and the oxide semiconductor film. An oxygen-deficient oxide semiconductor layer which includes crystal grains with a size of 1 nm to 10 nm and has a higher carrier concentration than the oxide semiconductor film serving as a channel formation region is provided between the oxide semiconductor film and the source and drain electrodes.

A memory using a mixed valence conductive oxides. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion.

A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0<x<2.5) and a second region comprising a second oxygen-deficient tantalum oxide having a composition represented by TaOy (x<y<2.5), the first region and the second region being arranged in a thickness direction of the resistance variable layer.

A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.

A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.

An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.

A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.

A thin film transistor structure in which a source electrode and a drain electrode formed from a metal material are in direct contact with an oxide semiconductor film may lead to high contact resistance. One cause of high contact resistance is that a Schottky junction is formed at a contact plane between the source and drain electrodes and the oxide semiconductor film. An oxygen-deficient oxide semiconductor layer which includes crystal grains with a size of 1 nm to 10 nm and has a higher carrier concentration than the oxide semiconductor film serving as a channel formation region is provided between the oxide semiconductor film and the source and drain electrodes.

A synthetic quartz glass for an optical member which is free from compaction and rarefaction is obtained. A synthetic quartz glass for an optical member to be used for an optical device employing a light having a wavelength of at most 400 nm and at least 170 nm as a light source, which contains substantially no oxygen excess defects, dissolved oxygen molecules nor reduction type defects, which has a chlorine concentration of at most 50 ppm and a OH group concentration of at most 100 ppm, and which contains oxygen deficient defects within a concentration range of at most 5×1014 defects / cm3 and at least 1×1013 defects / cm3. The fluorine concentration is preferably at most 100 ppm.

A non-volatile memory device structure. The non-volatile memory device structure comprises a first electrode formed from a first metal material, a resistive switching element overlying the first electrode. The resistive switching element comprises a metal oxide material characterized by one or more oxygen deficient sites. The device includes a second electrode overlying the resistive switching layer, the second electrode being formed from a second metal material. The second electrode is made from a noble metal. The one or more oxygen deficient sites are caused to migrate from one of the first electrode or the second electrode towards the other electrode upon a voltage applied to the first electrode or the second electrode. The device can have a continuous change in resistance upon applying a continuous voltage ramp, suitable for an analog device. Alternatively, the device can have a sharp change in resistance upon applying the continuous voltage ramp, suitable for a digital device.

This invention relates to a photovoltaic device including a front contact and / or a method of making the same. In certain example embodiments, the transparent conductive oxide (TCO) front contact is of indium zinc oxide (IZO). In other example embodiments, the IZO may have other element(s) such as silver (Ag) added thereto so that the front contact may be of or include zinc aluminum silver oxide (ZnAlAgO) for example. Moreover, in certain example embodiments the front contact (e.g., IZO or ZnAlAgO) may be sputter-deposited in an oxygen deficient form (substoichiometric); so that subsequent heat treatment or baking used in the photovoltaic device manufacturing (e.g., for subsequent layer formation) results in an optimal stoichiometry which may or may not be substoichiometric in the final product.

A process for treating agglomerating coal includes providing dried, pulverized, agglomerating coal, and treating the coal in a vessel with a gas stream having an oxygen content sufficient to form at least some oxides on surface of coal particles, wherein the oxides are sufficient to convert coal into substantially non-agglomerating coal. The treated coal is transferred into a pyrolyzing chamber and passed into contact with an oxygen deficient sweep gas, the sweep gas being at a higher temperature than the temperature of the coal so that heat is supplied to the coal. The process further includes providing additional heat to coal indirectly by heating the chamber, wherein the heating of coal by the sweep gas and by the indirect heating from the chamber causes condensable volatile components to be released into the sweep gas. The sweep gas is removed from the chamber and treated to remove condensable components of coal.

A process for treating bituminous coal includes providing dried, pulverized coal, and treating the pulverized coal in a vessel with a gas stream having an oxygen content sufficient to form oxides on surface of coal particles. The treated coal is transferred into a pyrolyzing chamber and passed into contact with an oxygen deficient sweep gas, the sweep gas being at a higher temperature than the temperature of the coal so that heat is supplied to the coal. The process further includes providing additional heat to the coal indirectly by heating the chamber, wherein the heating of coal by the sweep gas and by the indirect heating from the chamber causes condensable volatile components to be released into the sweep gas. Some of the oxides are converted into paramagnetic mineral components, which are removed from coal to form a coal char having reduced ash and sulfur.

A memory cell and method for controlling the resistance properties in a memory material are provided. The method comprises: forming manganite; annealing the manganite in an oxygen atmosphere; controlling the oxygen content in the manganite in response to the annealing; and, controlling resistance through the manganite in response to the oxygen content. The manganite is perovskite-type manganese oxides with the general formula RE1-xAExMnOy, where RE is a rare earth ion and AE is an alkaline-earth ion, with x in the range between 0.1 and 0.5. Controlling the oxygen content in the manganite includes forming an oxygen-rich RE1-xAExMnOy region where y is greater than 3. A low resistance results in the oxygen-rich manganite region. When y is less than 3, a high resistance is formed. More specifically, the process forms a low resistance oxygen-rich manganite region adjacent an oxygen-deficient high resistance manganite region.

A method of reactively sputtering from a metallic zinc target a transparent conductive oxide electrode of zinc oxide from a metallic zine in a silicon photo diode device and the resultant product, such as a solar cell. The electrode in deposited on a transparent substrate in at least two steps. The oxygen partial pressure is reduced in the first step to produce an oxygen-deficient ZnO layer, which is highly conductive and has a textured surface, and is increased in the second step to produce a more stoichiometric ZnO, which has a refractive index more closely matched to the overlying silicon device. The second layer is substantially thinner than the first so the surface texture is transferred across it and the overall sheet resistance of the stack structure is reduced.

An NFET containing a first high-k dielectric portion and a PFET containing a second high-k gate dielectric portion are formed on a semiconductor substrate. A gate sidewall nitride is formed on the gate of the NFET, while the sidewalls of the PFET remain free of the gate sidewall nitride. An oxide spacer is formed directly on the sidewalls of a PFET gate stack and on the gate sidewall nitride on the NFET. After high temperature processing, the first and second dielectric portions contain a non-stoichiometric oxygen deficient high-k dielectric material. The semiconductor structure is subjected to an anneal in an oxygen environment, during which oxygen diffuses through the oxide spacer into the second high-k dielectric portion. The PFET comprises a more stoichiometric high-k dielectric material and the NFET comprises a less stoichiometric high-k dielectric material. Threshold voltages of the PFET and the NFET are optimized by the present invention.

The invention provides a refrigerating and freezing device and a storage container thereof. The storage container comprises an electrolysis deoxygenization assembly and a moisture permeability assembly. The electrolysis deoxygenization assembly is used for consuming oxygen in air in a storage space, so that a nitrogen-rich oxygen-deficient air atmosphere beneficial to food preservation is obtainedin the space, the intensity of aerobic respiration of food is reduced, and the aim of long-term preserving the food is achieved. When the electrolysis deoxygenization assembly is used for consuming the oxygen in the storage space, a certain moisture is produced in the storage space, so that the inner part of the storage space is more and more humid. Through the moisture permeability assembly, themoisture in the air in the storage space can be conveyed to the outer part of the space through a pervaporation membrane through vaporization penetration, so that the humidity in the storage space still keeps in the appropriate range, and condensate or dropping water is prevented from being produced in the space. In the refrigerating and freezing device provided by the invention, the electrolysisdeoxygenization assembly and the moisture permeability assembly can be used in a matching way, so that food can be preserved favorably.

The invention relates to an explosion-proof reconnaissance robot, which comprises an explosion-proof reconnaissance robot moving platform, an explosion-proof environment parameter acquisition mechanism, an explosion-proof infrared data acquisition mechanism, an explosion-proof camera mechanism and a host computer console. Crawler belt falling or rolling over does not happen when the explosion-proof reconnaissance robot passes an object with different left and right heights; the explosion-proof reconnaissance robot can still travel safely when high-temperature flame burns a body per se or crawler belts; through the communication protocol and the control mechanism, the chassis control algorithm driven by the target can be realized, and the response speed and control precision of the robot are improved; the movement performance, safety and applicability of the reconnaissance robot in the complex, harsh or even high-risk environments are improved, the survival rate of the reconnaissance robot is increased, the reconnaissance robot can enter the scenes of dangerous disasters and accidents, such as radioactive, high-temperature, flammable and combustible, toxic, oxygen-deficient and heavy-smoke scenes, for reconnaissance, data acquisition and even rescue by replacing workers, and thus the problems such as personal safety of workers and insufficient data acquisition at the scenes areeffectively solved.

A turbine engine component includes an electron beam-physical vapor deposition thermal barrier coating covering at least a portion of a substrate. The thermal barrier coating includes an inner layer having a columnar-grained microstructure with inter-columnar gap porosity. The inner layer includes a stabilized ceramic material. The thermal barrier coating also includes a substantially non-porous outer layer, covering the inner layer and including the stabilized ceramic material. The outer layer is deposited with continuous line-of-sight exposure to the vapor source under oxygen deficient conditions. The outer layer may further comprise a dopant oxide that is more readily reducible than the stabilized ceramic material. During deposition, the outer layer may also have an oxygen deficient stoichiometry with respect to the inner layer. Oxygen stoichiometry in the outer layer may be restored by exposure of the coated component to an oxidizing environment.

An air separation unit separates air into an oxygen-rich and oxygen-deficient gas. Fuel gas and the oxygen-rich gas are preheated at heat exchangers through which hot flue gas flows. Combustion of the preheated fuel and oxygen-rich gases result in the hot flue gas. The hot flue gas is cooled at the heat exchangers and flows through a waste heat boiler. Water and / or steam flowing through the waste heat boiler absorbs energy from the cooled flue gas thereby producing heated steam. The heated steam flows through a turbine to produce power. The power is transferred to the air separation unit, thus reducing a power requirement of the air separation unit needed to separate the air.

An NFET containing a first high-k dielectric portion and a PFET containing a second high-k gate dielectric portion are formed on a semiconductor substrate. A gate sidewall nitride is formed on the gate of the NFET, while the sidewalls of the PFET remain free of the gate sidewall nitride. An oxide spacer is formed directly on the sidewalls of a PFET gate stack and on the gate sidewall nitride on the NFET. After high temperature processing, the first and second dielectric portions contain a non-stoichiometric oxygen deficient high-k dielectric material. The semiconductor structure is subjected to an anneal in an oxygen environment, during which oxygen diffuses through the oxide spacer into the second high-k dielectric portion. The PFET comprises a more stoichiometric high-k dielectric material and the NFET comprises a less stoichiometric high-k dielectric material. Threshold voltages of the PFET and the NFET are optimized by the present invention.

A method of preparing a low-density material and precursor for forming a low-density material is provided. An aqueous mixture of inorganic primary component and a blowing agent is formed, the mixture is dried and optionally ground to form an expandable precursor. Such a precursor is then fired with activation of the blowing agent being controlled such that it is activated within a predetermined optimal temperature range. Control of the blowing agent can be accomplished via a variety of means including appropriate distribution throughout the precursor, addition of a control agent into the precursor, or modification of the firing conditions such as oxygen deficient or fuel rich environment, plasma heating etc.

The present invention relates to one kind of organism fixing and permeating reaction wall system, stuffing and process for repairing organic matter polluted underground water. The reaction wall system consists of an oxygen-releasing reaction wall and a biological degrading wall following the oxygen-releasing reaction wall. The oxygen-releasing reaction wall is provided with solid granular stuffing of oxygen-releasing material, and the biological degrading wall is provided with immobilized microbes. The reaction wall system can change the oxygen deficient and oligotrophic state of underground water, regulate pH value and fix microbes, so as to constitute an ideal and efficient organic pollutant aerobic biodegrading system, and possesses wide application foreground.

The invention relates to a method of preparing biomass charcoals with natural materials, which comprises the following steps: collecting and putting the natural materials into a carbonization furnace after drying and removing impurities, covering the sealing cap, opening the airflow adjusting valve, and heating to remove residual moisture; continuously heating for pre-carbonization; after adjusting the temperature in the furnace to the carbonization temperature, closing the airflow adjusting valve, carrying out therrmolysis and carbonization in the airproof and oxygen-deficient environment, cooling the furnace to the temperature of 60 DEG C, and discharging the biomass charcoals from the discharging port. High temperature insulation materials are coated on the inner wall of the carbonization furnace body, and an oven, an electric heating zone and a funnel-shaped discharging zone are sequentially arranged on the furnace body from top to bottom, wherein the lower part of the oven is of a funnel shape, the center of the electric heating zone is provided with a material discharging straight channel, the lower edge of the funnel-shaped structure is communicated with the upper edge of the material discharging straight channel, a movable mesh grate is arranged at the junction, a circular electric heating tube is wound around the discharging channel; a sealing cap is arranged on the feeding port, and a sealing baffle is arranged on the discharging port of the funnel-shaped discharging zone.

In an electrophotographic photosensitive member having a support, a conductive layer formed on the support, an intermediate layer formed on the conductive layer, and a photosensitive layer formed on the intermediate layer, the conductive layer has been formed by using a conductive layer coating fluid which contains TiO2 particles coated with oxygen deficient SnO2 having an average particle diameter of from 0.20 μm or more to 0.60 μm or less, and has a volume resistivity of from more than 8.0×108 Ωcm to 1.0×1011 Ωcm or less. The electrophotographic photosensitive member can keep charging lines from occurring.

The invention relates to a method for preparing a wood-plastic composite, in particular to a method for preparing a wood-plastic composite by blending heat-treated plant fibers with plastics. The method comprises the following steps of: crushing the plant fiber, screening the crushed plant fiber by a sieve of 20-120 meshes to prepare the plant fiber powders; carrying out heat treatment on the crushed plant fiber under an oxygen deficient condition, wherein the heat treatment time is 0.5-24h, the temperature is 140-350 DEG C and the preferably selected temperature range is 180-250 DEG C; uniformly mixing the plastic, a lubricant, a plasticizer, a stabilizer, a compatibilizer and the plant fiber modified by heat treatment to prepare the mixture under the high-speed mixing condition with the rotation speed of 800-1000r / min; and extruding the mixture out of a twin-screw extruder after reaction; and granulating and obtaining granules or directly extruding and obtaining the product by a die. The heat-treated plant fiber powder reduces the amount of hydroxy groups, the hydrophilicity and the water absorption of the final product and improves the dimension stability.

Disclosed herein is a method for production of a thin-film semiconductor device which includes, a first step to form a gate electrode on a substrate, a second step to form a gate insulating film of silicon oxynitride on the substrate in such a way as to cover the gate electrode, a third step to form a semiconductor thin film on the gate insulating film, and a fourth step to perform heat treatment in an oxygen-containing oxidizing atmosphere for modification through oxygen binding with oxygen-deficient parts in the silicon oxynitride film constituting the gate insulating film.

The invention discloses a method for preparing biological carbon with high nitrogen-phosphorus adsorption properties. According to the method, forestry and agricultural residues are taken as raw materials to prepare the biological carbon with the high nitrogen-phosphorus adsorption property by carrying out high-temperature oxygen-deficient themolysis by utilizing the catalytic performance of light rare earth elements. The sources of the utilized raw materials are wide, the cost of a rare earth catalyst is low, and the prepared biological carbon is high in nitrogen-phosphorus adsorption speed and large in nitrogen-phosphorus adsorption capacity; the largest adsorbing capacities of NO3<->, NH4<+> and PO4<3-> can respectively reach 38.44mg / g, 15.58mg / g and 19.74mg / g. The method is simple in process operation, low in investment requirement and cost and high in product recovery rate and application value.