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1434 results about "Physical vapor deposition" patented technology

Physical vapor deposition (PVD) describes a variety of vacuum deposition methods which can be used to produce thin films and coatings. PVD is characterized by a process in which the material goes from a condensed phase to a vapor phase and then back to a thin film condensed phase. The most common PVD processes are sputtering and evaporation. PVD is used in the manufacture of items which require thin films for mechanical, optical, chemical or electronic functions. Examples include semiconductor devices such as thin film solar panels, aluminized PET film for food packaging and balloons, and titanium nitride coated cutting tools for metalworking. Besides PVD tools for fabrication, special smaller tools (mainly for scientific purposes) have been developed.

Ruthenium containing layer deposition method

An exemplary apparatus and method of forming a ruthenium tetroxide containing gas to form a ruthenium containing layer on a surface of a substrate is described herein. The method and apparatus described herein may be especially useful for fabricating electronic devices that are formed on a surface of the substrate or wafer. Generally, the method includes exposing a surface of a substrate to a ruthenium tetroxide vapor to form a catalytic layer on the surface of a substrate and then filling the device structures by an electroless, electroplating, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD) or plasma enhanced ALD (PE-ALD) processes. In one embodiment, the ruthenium containing layer is formed on a surface of a substrate by creating ruthenium tetroxide in an external vessel and then delivering the generated ruthenium tetroxide gas to a surface of a temperature controlled substrate positioned in a processing chamber. In one embodiment, a ruthenium tetroxide containing solvent formation process is used to form ruthenium tetroxide using a ruthenium tetroxide containing source material. In one embodiment, of a ruthenium containing layer is formed on a surface of a substrate, using the ruthenium tetroxide containing solvent. In another embodiment, the solvent is separated from the ruthenium tetroxide containing solvent mixture and the remaining ruthenium tetroxide is used to form a ruthenium containing layer on the surface of a substrate.
Owner:APPLIED MATERIALS INC

Chemical vapor deposition method for depositing a high k dielectric film

The invention includes chemical vapor deposition and physical vapor deposition methods of forming high k ABO3 comprising dielectric layers on a substrate, where “A” is selected from the group consisting of Group IIA and Group IVB elements and mixtures thereof, and where “B” is selected from the group consisting of Group IVA metal elements and mixtures thereof. In one implementation, a plurality of precursors comprising A, B and O are fed to a chemical vapor deposition chamber having a substrate positioned therein under conditions effective to deposit a high k ABO3 comprising dielectric layer over the substrate. During the feeding, pressure within the chamber is varied effective to produce different concentrations of A at different elevations in the deposited layer and where higher comparative pressure produces greater concentration of B in the deposited layer. In one implementation, a subatmospheric physical vapor deposition method of forming a high k ABO3 comprising dielectric layer on a substrate includes providing a sputtering target comprising ABO3 and a substrate to be deposited upon within a physical vapor deposition chamber. A sputtering gas is fed to the chamber under conditions effective to sputter the target and deposit a high k ABO3 comprising dielectric layer over the substrate. During the feeding, pressure is varied within the chamber effective to produce different concentrations of B at different elevations in the deposited layer and where higher comparative pressure produces greater concentration of B in the deposited layer.
Owner:MICRON TECH INC

Ruthenium layer deposition apparatus and method

An exemplary apparatus and method of forming a ruthenium tetroxide containing gas to form a ruthenium containing layer on a surface of a substrate is described herein. The method and apparatus described herein may be especially useful for fabricating electronic devices that are formed on a surface of the substrate or wafer. Generally, the method includes exposing a surface of a substrate to a ruthenium tetroxide vapor to form a catalytic layer on the surface of a substrate and then filling the device structures by an electroless, electroplating, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD) or plasma enhanced ALD (PE-ALD) processes. In one embodiment, the ruthenium containing layer is formed on a surface of a substrate by creating ruthenium tetroxide in an external vessel and then delivering the generated ruthenium tetroxide gas to a surface of a temperature controlled substrate positioned in a processing chamber. In one embodiment, a ruthenium tetroxide containing solvent formation process is used to form ruthenium tetroxide using a ruthenium tetroxide containing source material. In one embodiment, of a ruthenium containing layer is formed on a surface of a substrate, using the ruthenium tetroxide containing solvent. In another embodiment, the solvent is separated from the ruthenium tetroxide containing solvent mixture and the remaining ruthenium tetroxide is used to form a ruthenium containing layer on the surface of a substrate.
Owner:APPLIED MATERIALS INC

Electroplating and electroless plating of conductive materials into openings, and structures obtained thereby

A through hole (114) is formed in a wafer (104) comprising a semiconductor substrate (110). A seed layer (610) is sputtered on the bottom surface of the wafer. The seed is not deposited over the through hole's sidewalls adjacent the top surface of the wafer. A conductor (810) is electroplated into the through hole. In another embodiment, a seed is deposited into an opening in a wafer through a dry film resist mask (1110). The dry film resist overhangs the edges of the opening, so the seed is not deposited over the opening's sidewalls adjacent the top surface of the wafer. In another embodiment, a dielectric (120) is formed in an opening in a semiconductor substrate (110) by a non-conformal physical vapor deposition (PVD) process that deposits the dielectric on the sidewalls but not the bottom of the opening. A seed (610) is formed on the bottom by electroless plating. A conductor (810) is electroplated on the seed. In another embodiment, a dielectric (2910) is formed in the opening to cover the entire surface of the opening. A non-conformal layer (120) is deposited by PVD over the sidewalls but not the bottom of the opening. The dielectric (2910) is etched off the bottom with the non-conformal layer (120) as a mask. A seed (610) is formed on the bottom by electroless plating. The non-conformal layer can be formed by electroplating. It can be tantalum deposited by electroplating, then anodized. Other embodiments are also provided.
Owner:INVENSAS CORP

A preparation method of high-performance sintered NdFeB with low dysprosium content

The invention discloses a method for preparing sintered NdFeB with low dysprosium (Dy) content and high performance; the method comprises the following steps of: sputtering and plating the Dy element on the surface of jet mill powder by using the powder plate technology based on magnetron sputtering on the basis of preparing NdFeB powder, and then sufficiently dispersing the Dy element to micron-sized NdFeB crystal particles by dispersing the Dy element at high temperature in the sintering and tempering process, thereby achieving the effect of improving magnetic performance of the sintered NdFeB. Compared with the introduction of the Dy element in the proportioning process of the prior art, the method disclosed by the invention has the advantages: the low dysprosium content and high performance is limited in the nano-size by adopting the physical gas-phase deposition, the consumption quantity of the Dy element during the production process is controlled effectively and the preparationof sintered NdFeB with low dysprosium content and high performance is realized. Compared with the sintered NdFeB of the same components prepared by the traditional casting and powder metallurgy process, both the intrinsic coercivity and the maximum magnetic energy product of the sintered NdFeB rare-earth permanent magnetic material obtained according to the invention are improved obviously; compared with the sintered NdFeB with the same performance prepared by the traditional casting and powder metallurgy process, the dosage of the dysprosium element is reduced remarkably. The method can be widely applicable to producing and manufacturing sintered NdFeB with high performance.
Owner:NANJING UNIV OF SCI & TECH +1
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