13 results about "Ruthenium tetroxide" patented technology

To provide an epoxy resin hardener or the like that imparts superior stability and reactivity to an epoxy resin composition mixed with a low-molecular-weight epoxy compound, a solvent, or a low-molecular-weight acryl compound, and that enables provision of superior appearance even in fine regions when curing an epoxy resin composition containing a filler.SOLUTION: An epoxy resin hardener comprises: a core (A) containing a nitrogen-containing compound; and a layer (B) that covers the core (A). In the epoxy resin hardener, after staining the epoxy resin hardener with ruthenium tetroxide and osmium tetroxide, observing it via transmission electron microscopy, and deriving a luminance graph through image processing, the inside of the layer (B) includes a region having luminance α, wherein the luminance α is higher than a luminance β at the outermost surface of the layer (B) and a luminance γ at the boundary between the layer (B) and the core (A).SELECTED DRAWING: None

The invention discloses an adsorbent for chemical ruthenium removal as well as a preparation method and application thereof, the preparation method comprises the following steps: S1, mixing yttrium sol with carrier microspheres, carrying out vacuum impregnation treatment to enable the carrier microspheres to adsorb the yttrium sol, and then filtering to obtain a complex; s2, drying the complex to obtain a dried body; and S3, calcining the dried body, and cooling to obtain the yttrium oxide-based adsorbent for chemical ruthenium removal. The adsorbent for chemical ruthenium removal is high in adsorption capacity and large in adsorption capacity, ruthenium tetroxide gas can be adsorbed and subjected to chemical reaction fixation, and the ruthenium removal effect is good.

An epoxy resin curing agent has: a core (A) containing a nitrogen-containing compound and a layer (B) covering the core (A). When the epoxy resin curing agent is stained with ruthenium tetroxide and osmium tetroxide and observed by a transmission electron microscope and a brightness curve is obtained by image processing, the interior of the layer (B) contains a region with brightness α, which is higher than the brightness β of the outermost part of the layer (B) and the brightness γ of the boundary between the layer (B) and the core (A).

To provide a method for selective removal of ruthenium-containing material by etching.SOLUTION: An etching method includes flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber and contacting a substrate contained within the processing region with the oxygen-containing precursor. The substrate includes an exposed region of ruthenium, and the contacting produces ruthenium tetroxide. The method also includes evaporating the ruthenium tetroxide from a surface of the exposed region of ruthenium, leaving behind a quantity of ruthenium oxide. The method further includes contacting the ruthenium oxide with a hydrogen-containing precursor and removing the ruthenium oxide.SELECTED DRAWING: Figure 4

An exemplary etching method can include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The method can include contacting a substrate contained in the processing region with the oxygen-containing precursor. The substrate can include an exposed ruthenium region, and the contacting can produce ruthenium tetroxide. The method can include vaporizing the ruthenium tetroxide from a surface of the exposed ruthenium region. An amount of oxidized ruthenium can be retained. The method can include contacting the oxidized ruthenium with a hydrogen-containing precursor. The method can include removing the oxidized ruthenium.

A substrate processing method according to the present invention appropriately etches a ruthenium-containing layer without generating ruthenium tetroxide. This substrate processing method is provided with: a step for preparing a substrate (9), the surface of which is provided with a ruthenium-containing layer (93); bringing an etching solution (71), which contains chlorine and water and does not contain an oxidizing agent, into contact with the ruthenium-containing layer (93) on the substrate (9); and irradiating the ruthenium-containing layer (93) in contact with the etching solution (71) with excitation light that excites ruthenium. This makes it possible to suitably etch the ruthenium-containing layer (93) without generating gaseous ruthenium tetroxide.

The application relates to the technical field of metal refining, in particular to a ruthenium refining device and method, which comprises a distillation system, an absorption system, a reduction filtering system and a vacuum system; the distillation system, the absorption system and the reduction filtering system are sequentially connected in communication; the vacuum system is connected in communication with the end of the absorption system and the reduction filtering system; a ruthenium-containing material is reacted with an oxidizing agent in the distillation system to generate ruthenium tetroxide gas; hydrochloric acid in the absorption system is used to absorb the ruthenium tetroxide gas to generate a chlororuthenate solution; and the reduction filtering system reduces chlororuthenate in the chlororuthenate solution into ruthenium metal. In the application, the distillation system, the absorption system, the reduction filtering system and the vacuum system are cooperatively matched, so that the operation process of refined ruthenium is simplified, and the recovery rate of the ruthenium metal is improved.

The invention relates to the technical field of metal refining, in particular to a ruthenium refining device and method.The ruthenium refining device comprises a distillation system, an absorption system, a reduction filtering system and a vacuum system, the distillation system, the absorption system and the reduction filtering system communicate in sequence, and the vacuum system communicates with the tail end of the absorption system and the reduction filtering system; the ruthenium-containing material reacts with an oxidizing agent in the distillation system to generate ruthenium tetroxide gas; hydrochloric acid in the absorption system is used for absorbing ruthenium tetroxide gas to generate a chlororuthenium acid solution; and the reduction filtering system is used for reducing the chlororuthenium acid in the chlororuthenium acid solution into a ruthenium metal simple substance. In the application, through the cooperation of the distillation system, the absorption system, the reduction filtration system and the vacuum system, the operation process of the concentrated ruthenium is simplified, and the recovery rate of ruthenium metal is improved.

Disclosed is a method for depositing a ruthenium-containing film on a substrate by a cyclic deposition process. The method may include: contacting the substrate with a first gaseous reactant including a metal organic precursor, the metal organic precursor including a metal selected from the group consisting of platinum, aluminum, titanium, bismuth, zinc, and combinations thereof. The method may further include: contacting the substrate with a second gaseous reactant including ruthenium tetroxide, wherein the ruthenium-containing film includes at least one of a ruthenium-platinum alloy or ruthenium trioxide. Also disclosed is a device structure including a ruthenium-containing film deposited by the method of the present invention.

A process for passivating a polymeric material on the surface of toner particles, comprising: Treating the surface of the polymeric material on the surface of toner particles, wherein the surface treatment comprises: (i) immersing the polymeric material in an aqueous solution of ruthenium tetroxide or osmium tetroxide, (ii) drying the polymeric material to obtain a passivated polymeric material, and (iii) embedding the toner particles comprising the surface-treated, passivated, polymeric material in a resin, wherein the passivated polymeric material does not interact with the embedding resin; wherein the polymeric material is immersed in the aqueous solution for 10 minutes to 4 hours.

The invention provides a sequencing method for quantitatively detecting DNA methylation, which comprises the following steps: carrying out oxidation and transformation pretreatment on an extracted DNA sample, and then carrying out library construction and DNA methylation sequencing; the oxidizing reagent comprises potassium perruthenate or ruthenium tetroxide; the concentration of the oxidizing reagent is 100 to 300 mM; the oxidation temperature is 30 to 50 DEG C. According to the DNA methylation sequencing method, a sequencing library is constructed after a DNA sample is oxidized and converted, a Twist targeted DNA methylation hybridization technology is adopted for detection, and the DNA methylation degree is truly quantified; the oxidation temperature is improved, so that the oxidation pretreatment time is remarkably shortened, and the detection efficiency of DNA methylation is improved.

The epoxy resin curing agent has a core (A) containing a nitrogen-containing compound and a layer (B) covering the core (A), and when the epoxy resin curing agent is dyed with ruthenium tetroxide and osmium tetroxide and then observed with a transmission electron microscope and a brightness graph is obtained by image processing, the layer (B) contains a region having a brightness [alpha]. The luminance alpha is higher than the luminance beta of the outermost portion of the layer (B) and the luminance gamma of the boundary between the layer (B) and the core (A).

The application discloses an extraction method for extracting platinum group metals, and relates to the technical field of precious metal recovery; the extraction method comprises the following steps: taking a platinum group metal concentrate for pretreatment, slurring the pretreated platinum group metal concentrate by using a sodium chlorate solution with a concentration of 0.8-1.2 mol / L, controlling the solid-liquid ratio of the slurring system to be 1:3-1:5 (g / mL), stirring the slurring system at a stirring speed of 150-200 r / min and a temperature of 25-35 DEG C for 20-30 min, and obtaining a uniform slurring liquid; the slurring liquid obtained in the step S1 is transferred into a distillation reactor, heated to 90-95 DEG C and kept, and dilute sulfuric acid with a concentration of 1-3 mol / L is slowly added at a rate of 10-20 mL / min; S3, the temperature in the distillation reactor is kept at 90-95 DEG C, and the distillation is continuously stirred for 2.0 h under normal pressure, and the volatilized osmium and ruthenium tetroxide are collected through a tail gas absorption device during the distillation; the technical scheme provided by the application can effectively improve the recovery efficiency and recovery rate of ruthenium and osmium in the platinum group metal ore.