35439results about How to "Avoid it happening again" patented technology

Disclosed herein are various exemplary systems and methods for linking entity references to entities and identifying associations between entities. In particular, a method for identifying an entity from a plurality of entity references, each entity reference being linked with a separate ghost entity, is provided. The method comprises the steps of comparing an entity reference of a first ghost entity with an entity reference of a second ghost entity to determine a match probability between the entity reference of the first ghost entity and the entity reference of the second ghost entity, linking the entity reference of the first ghost entity additionally with the second ghost entity and the entity reference of the second ghost entity additionally with the first ghost entity when the match probability is greater than or equal to a match threshold and repeating the steps of comparing and linking for one or more ghost entity pairings possible from the ghost entities. The method further comprises determining, for one or more entity references linked to a ghost entity, a score for the entity reference based at least in part on a match probability between the entity reference and a value representing the one or more entity references linked to the ghost entity and identifying the ghost entity as an actual entity based at least in part on one or more scores for the one or more entity references linked to the ghost entity.

An immersion lithographic apparatus includes a voltage generator or power source that applies a potential difference to an object in contact with the immersion liquid such that bubbles and / or particles in the immersion liquid are either attracted or repelled from that object due to the electrokinetic potential of the surface of the bubble in the immersion liquid.

Various exemplary systems and methods for linking entity references and identifying associations are presented. In particular, a method is provided for linking a plurality of entity references to at least one entity. The method comprises the steps of evaluating a probability of a match between a first entity reference and a second entity reference based at least in part on a statistical significance of one or more field values being common to both the first entity reference and the second entity reference, wherein field value statistical significance is inversely related to a number of field value occurrences occurring in some or all of the plurality of entity references and linking the first entity reference with the second entity reference when the probability is greater than or equal to a match threshold.

A system for long-term remote medical monitoring is especially suitable for the medical supervision of astronauts onboard a space station. The system includes at least one autonomous sensor unit (SU) with a sensor (1) and transmit / receive electrodes (2) connected to a microchip (3) and mounted on a carrier (4) in the form of an adhesive bandage that can easily be applied to the skin of the subject astronaut (11). The system further includes a body transceiver (10) that is worn on the body of the subject and acts as a centralized transmitting and receiving unit, and a portable data logger (12). Medical data such as the pulse rate and the like, as well as environmental data such as the ambient surrounding air temperature, are sensed by respective allocated sensor units (SU) and transmitted from the sensor units as electrical signals via the skin and other body tissues of the subject (11) to the body transceiver (10). From the body transceiver (10), the data signals are further transmitted, for example by a radio or infrared transmission, to the data logger (12), where the data can be recorded, displayed, processed, or further transmitted via a satellite (14) to a base station (13) or a ground-based facility such as a hospital (15). Polling signals are also transmitted from the body transceiver (10) to the sensor units (SU) in a wireless manner through the skin and other body tissues of the subject.

A golf club head includes a body including at least one compartment, at least one positioning member removably mounted in the at least one compartment, at least one weight member mounted in at least one the positioning member, and at least one retaining member for retaining the at least one weight member in the at least one positioning member. The weight member is concealed in the compartment of the body to provide a good appearance while simplifying polishing procedure and allowing easy replacement of the weight member.

An EL element (60) comprises an anode (61), a cathode (67), and an emissive element layer (66) interposed between the two electrodes. A TFT is connected to the anode (61) at its source electrode (33s). The peripheral portion of the anode (61) and the entire region over the TFT are covered with a planarizing insulating film (17), and a part of the exposed portion of the anode (61) is connected to the emissive element layer (66). According to the above arrangement, it is possible to prevent disconnection of the emissive element layer (66) which may be caused by an uneven surface created by the thickness of the anode (61), and to avoid formation of a short circuit between the anode (61) and the cathode (67).

A semiconductor light emitting device includes a crystal layer formed on a substrate, the crystal layer having a tilt crystal plane tilted from the principal plane of the substrate, and a first conductive type layer, an active layer, and a second conductive type layer, which are formed on the crystal layer in such a manner as to extend within planes parallel to the tilt crystal plane, wherein the device has a shape formed by removing the apex and its vicinity of the stacked layer structure formed on the substrate. Such a semiconductor light emitting device is excellent in luminous efficiency even if the device has a three-dimensional device structure. The present invention also provides a method of fabricating the above semiconductor light emitting device.

An exposure apparatus exposes a substrate by projecting a pattern image onto the substrate via a projection optical system and a liquid. The exposure apparatus includes a liquid supply device which supplies liquid onto the substrate from above the substrate through a first and second supply ports disposed in a vicinity of a projection area onto which the pattern image is projected, and a liquid recovery device which recovers liquid on the substrate from above the substrate through an inside recovery port disposed outside the first and second supply ports and an outside the second recovery port disposed outside the inside recovery port.

Described is a system for monitoring medical parameters of a being, in particular a human being, comprising medical functional means including at least one sensor section for detecting at least one predetermined medical parameter, a transmitting means for transmitting the medical parameter(s) detected by said sensor section, said transmitting means being adapted to be provided at the being, and a remote serving means for receiving and processing the medical parameter(s) from said transmitting means and providing instructions and / or data on the basis of the processed medical parameters.

A substrate processing apparatus includes a substrate heating unit arranged to heat the underside of a substrate while supporting the substrate thereon and an attitude changing unit arranged to cause the substrate heating unit to undergo an attitude change between a horizontal attitude and a tilted attitude. In an organic solvent removing step to be performed following a substrate heating step of heating the substrate, the substrate heating unit undergoes an attitude change to the tilted attitude so that the upper surface of the substrate becomes tilted with respect to the horizontal surface.

It is an object of the present invention to provide a plasma CVD device in which it is possible to inhibit the formation of particles resulting from the adhesion of reaction by-products of poor adhesive strength around the upper electrode. The plasma CVD device has a vacuum container 200, an upper electrode 210 and a lower electrode 220. The edge of the gas dispersion plate 213 of the upper electrode 210 is formed in the shape of an upturned bowl, the edge of which extends below the upper surface of the treatment substrate W mounted on the substrate-mounting surface 221 of the lower electrode 220.

A method of manufacturing semiconductor devices includes forming a dielectric interlayer over a semiconductor substrate, wherein a wet etch rate (WER) is faster in an upper part of the dielectric interlayer than in a lower part of the dielectric interlayer, forming trenches in the dielectric interlayer, performing a cleaning process to make a width of an opening portion in an upper part of each of the trenches wider than a width of an opening portion in lower part of the trench, and filling the trenches with a metal layer.

A method for forming a thin film includes: supplying an additive gas, a dilution gas, and a silicon-containing source gas into a reaction chamber wherein a substrate is placed; forming a thin film on the substrate by plasma CVD under a given pressure with a given intensity of radio-frequency (RF) power from a first point in time to a second point in time; at the second point in time, stopping the supply of the silicon-containing source gas; and at the second point in time, beginning reducing but not stopping the RF power, and beginning reducing the pressure, wherein the reduction of the RF power and the reduction of the pressure are synchronized up to a third point in time.

A method for forming an oxide film by plasma-assisted processing includes: (i) supplying a precursor reactive to none of oxygen, CxOy, and NxOy (x and y are integers) without a plasma to a reaction space wherein a substrate is placed; (ii) exposing the precursor to a plasma of CxOy and / or NxOy in the reaction space; and (iii) forming an oxide film on the substrate using the precursor and the plasma.

A method for forming an oxide film by plasma-assisted processing includes: (i) supplying a precursor reactive to none of oxygen, CxOy, and NxOy (x and y are integers) without a plasma to a reaction space wherein a substrate is placed; (ii) exposing the precursor to a plasma of CxOy and / or NxOy in the reaction space; and (iii) forming an oxide film on the substrate using the precursor and the plasma.

A method for transporting a substrate using an end effector which mechanically clamps a periphery of the substrate includes: before transporting the substrate, depositing a compressive film only on, at, or in a bevel portion of the substrate; and transporting the substrate whose bevel portion is covered by the compressive film as the outermost film, using an end effector while mechanically clamping the periphery of the substrate.

A gas supply mechanism includes a gas introduction member having gas inlet portions through which a gas is introduced into a processing chamber, a processing gas supply unit, a processing gas supply path, branch paths, an additional gas supply unit and an additional gas supply path. The gas inlet portions includes inner gas inlet portions for supplying the gas toward a region where a target substrate is positioned in the chamber and an outer gas inlet portion for introducing the gas toward a region outside an outermost periphery of the target substrate. The branch paths are connected to the inner gas inlet portions, and the additional gas supply path is connected to the outer gas inlet portion.

A semiconductor device producing apparatus is disclosed. The apparatus includes a carrier-holding stage for placing a carrier; first, second and third stages each for holding first and second boats one at a time, each boat holding one or more substrates; a boat transfer mechanism for transferring the boats among the first, second and third stages; and a substrate transfer mechanism for transferring the substrate(s) from the carrier to the boat held by the first stage. A controller controls the first stage, the boat transfer mechanism and the substrate transfer mechanism so that the boat transfer mechanism transfers one of the boats from the second stage to the first stage, the substrate transfer mechanism then transfers the substrate(s) from the carrier to the boat held by the first stage, and the first stage then moves the boat into the processing chamber for processing.

To provide a deposition method and a deposition apparatus, in which deposition can be performed under a low temperature and a substrate does not suffer from charge-up damage, and a semiconductor device produced thereby. The deposition method is that reactive gas is made to pass through communication holes and guided toward downstream of the communication holes after the gas is exposed to surface wave of microwave, and it is reacted with silicon compound gas to deposit a silicon-containing film on a substrate arranged in the downstream.

A plurality of protruded portions is formed through embossing and is distributed and arranged regularly or irregularly on an electrostatic chuck surface, and has a circular or almost circular top surface shape and a roundness (R) of 0.01 mm or more is applied to an edge part defined by an intersection of the top surface and a side surface and a portion to which the roundness is applied occupies a quarter of a height h of the protruded portion or more.

An object of the invention is to calibrate an upper pyrometer for indirectly measuring a substrate temperature at the time of epitaxial growth in a comparatively short time and with accuracy to thereby improve the quality of an epitaxial substrate.After calibrating an upper pyrometer by a thermocouple mounted to a temperature calibrating susceptor, a measured value of a lower pyrometer is adjusted to a calibrated value of the upper pyrometer. Then, a correlation line between substrate temperature indirectly measured by the upper pyrometer at the time of epitaxial growth onto a sample substrate and haze of a sample substrate measured immediately after epitaxial growth is set to indirectly measure a substrate temperature by the upper pyrometer at the time of epitaxial growth onto a mass-production substrate. Moreover, substrate temperature at the time of epitaxial growth onto the mass-production substrate is estimated by applying the haze of the mass-production substrate measured immediately after epitaxial growth to the correlation line and then a measured temperature of the upper pyrometer is adjusted to the estimated temperature.

A substrate processing apparatus includes a partition comprising at least one through-hole, a conduit arranged in the partition through the through-hole, a gas supply unit connected to the conduit, and a low dielectric material provided between a side wall of the through-hole and the conduit.

The plasma processing apparatus relating to the present invention is provided with a process chamber, a pressure measuring unit for measuring the pressure inside of the process chamber and a pump for exhausting a gas in the process chamber. A pressure control valve for maintaining the pressure inside of the process chamber to a predetermined pressure by regulating an opening based on a measured value of the pressure measuring unit is provided between the pump and the process chamber. An exhaust capacity controller sets up the exhaust capacity in a state that the variation of the opening of the pressure control valve in response to the pressure fluctuation inside of the process chamber is large. A computing unit detects very small pressure fluctuation based on the variation of the opening of the pressure control valve. In results, enabling reliable detection of a very small gas flow fluctuation and pressure fluctuation by a less expensive method independent of process conditions.

A device and method for sensing breathing disorders, irregularities or insufficiencies is provided. One aspect includes sensing a precursor to an onset of a breathing disorder or episode of a breathing disorder and responding to sensing the precursor. Another aspect includes responding to treat the breathing disorder before manifestation of the disorder. Another aspect includes identifying a likelihood of a breathing disorder and responding using the likelihood and other information indicating onset or occurrence of a breathing disorder.

The present invention provides methods and system for managing neurological disorders such as epilepsy. In one embodiment, the method comprises measuring one or more signals from a patient and processing the one or more signals to characterize a patient's propensity for a future seizure. The characterized propensity for the seizure is thereafter used to determine an appropriate action for managing or treating the predicted seizure; and a recommendation is communicated to the patient that is indicative of the appropriate action.

The present invention provides systems and methods for managing epilepsy. In one embodiment, a method of the present invention characterize a patient's propensity for a future epileptic seizure and communicates to the patient and / or a health care provider a therapy recommendation. The therapy recommendation is typically a function of the patient's propensity for the future epileptic seizure.

A non-contact wireless communication apparatus and a mobile terminal apparatus are provided. The non-contact wireless communication apparatus includes a non-contact wireless communication antenna, a resonance capacitor, connected in parallel with the non-contact wireless communication antenna, for obtaining a predetermined resonance frequency with the non-contact wireless communication antenna, a resonance frequency adjustment unit for changing a resonance capacitance of the resonance capacitor to adjust the resonance frequency, a capacitance change amount control unit for controlling a change in resonance capacitance of the resonance capacitor in the resonance frequency adjustment unit, a resonance frequency shift unit for shifting the resonance frequency of the non-contact wireless communication antenna, and on / off control unit for performing on / off control of the resonance frequency shift unit in accordance with the amount of change in resonance capacitance of the resonance capacitor by the capacitance variation control unit.

A group III nitride semiconductor light emitting device according to the present invention includes an immediate layer formed of AlxGa1-x-yInyN (0<x<1, 0<y<1, x+y<1) between an active layer and a cladding layer and an electron blocking layer formed of p-type group III nitride semiconductor having a smaller electron affinity than that of the intermediate layer so as to be in contact with the intermediate layer. The semiconductor light emitting layer may be a laser diode or a LED.