504 results about "Principal plane" patented technology

A semiconductor light emitting device includes a crystal layer formed on a substrate, the crystal layer having a tilt crystal plane tilted from the principal plane of the substrate, and a first conductive type layer, an active layer, and a second conductive type layer, which are formed on the crystal layer in such a manner as to extend within planes parallel to the tilt crystal plane, wherein the device has a shape formed by removing the apex and its vicinity of the stacked layer structure formed on the substrate. Such a semiconductor light emitting device is excellent in luminous efficiency even if the device has a three-dimensional device structure. The present invention also provides a method of fabricating the above semiconductor light emitting device.

In a nitride semiconductor laser chip so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (1-100) plane as the principal plane, the resonator facet is perpendicular to the principal plane, and, in the cleavage surface forming the resonator facet, at least by one side of a stripe-shaped waveguide, an etched-in portion is formed as an etched-in region open toward the surface of the nitride semiconductor layers.

A locking system for mechanical joining of floorboards. For horizontal mechanical joining there is a projecting portion with a locking element which cooperates with a locking groove in an adjacent board. A tongue-and-groove joint for vertical mechanical joining has cooperating upper abutment surfaces and cooperating lower abutment surfaces which are essentially parallel with the principal plane of the floorboards and of which the lower abutment surfaces are positioned essentially outside the outer vertical plane, i.e. displaced relative to the upper abutment surfaces. The tongue is movable at an angle into the groove and the locking element is insertable into the locking groove by mutual angular movement of the boards about the joint edges.

Wirings each having a side face with a different angle, which is made accurately, in a desired portion over one mother glass substrate are provided without increasing the steps. With the use of a multi-tone mask, a photoresist layer is formed, which has a tapered shape in which the area of a cross section is reduced gradually in a direction away from one mother glass substrate. At the time of forming one wiring, one photomask is used and a metal film is selectively etched, whereby one wiring having a side face, the shape (specifically, an angle with respect to a principal plane of a substrate) of which is different depending on a place, is obtained.

A method for efficiently producing a plate-like nitride semiconductor crystal having the desired principal plane in a simple method is provided. A raw material gas is fed to a seed crystal in which a ratio (L/W) of length L in a longitudinal direction and maximum width W, of a plane of projection obtained by projecting a crystal growth face on the seed crystal in a growth direction is from 2 to 400, and the maximum width W is 5 mm or less, thereby growing a plate-like semiconductor crystal on the seed crystal.

The invention relates to a system for laying and mechanically joining building panels, especially thin, hard, floating floors. Adjacent joint edges (3, 4) of two panels (1, 2) engage each other to provide a first mechanical connection locking the joint edges (3, 4) in a first direction (D1) perpendicular to the principal plane of the panels. In each joint, there is further provided a strip (6) which is integrated with one joint edge (3) and which projects behind the other joint edge (4). The strip (6) has an upwardly protruding locking element (8) engaging in a locking groove (14) in the rear side (16) of the other joint edge (4) to form a second mechanical connection locking the panels (1, 2) in a second direction (D2) parallel to the principal plane of the panels and at right angles to the joint. Both the first and the second mechanical connection allow mutual displacement of joined panels (1, 2) in the direction of the joint.

In a light-emitting diode apparatus, light emitted from a principal plane of an emission layer has a plurality of unequal luminous intensities depending on the in-plane azimuth angle of the principal plane of the emission layer, and at least one of a light-emitting diode chip and a package has a structure of reducing difference in the intensity of light emitted from the package according to variation in the in-plane azimuth angle of a chip-arrangement surface.

The invention relates to a system for laying and mechanically joining building panels, especially thin, hard, floating floors. Adjacent joint edges of two panels engage each other to provide a first mechanical connection locking the joint edges in a first direction perpendicular to the principal plane of the panels. In each joint, there is further provided a strip which is integrated with one joint edge and which projects behind the other joint edge. The strip has an upwardly protruding locking element engaging in a locking groove in the rear side of the other joint edge to form a second mechanical connection locking the panels in a second direction parallel to the principal plane of the panels and at right angles to the joint. Both the first and the second mechanical connection allow mutual displacement of joined panels in the direction of the joint.

An epitaxial substrate for manufacturing field effect transistor (FET) that has heterojunction structure consisting of at least a channel layer made of gallium nitride or gallium indium nitride and a barrier layer made of aluminum gallium nitride formed successively on the principal plane of the sapphire substrate, wherein the principal plane of the sapphire substrate semiconductor is inclined from (01-12) plane toward (0001) plane by an off-angle α that is in a range of 0°<x≦5°. With this constitution, an epitaxial substrate for manufacturing field effect transistor having high smoothness is provided.

A light emitting element includes a group III nitride semiconductor substrate that emits a light by absorbing a UV ray and a light emitting diode structure. The light emitting diode structure is formed of a group III nitride semiconductor grown on the group III nitride semiconductor substrate, and has a p-type layer, an active layer that emits a light having a wavelength in the UV region, and an n-type layer. It is preferable that the group III nitride semiconductor substrate has a principal plane of a non-polar plane or a semi-polar plane and the group III nitride semiconductor having a same plane orientation as that of the principal plane is grown on the principal plane.

A light-directing lensing member for off-axial preferential-side distribution of light from a light emitter having an emitter axis, including a base end with a perimeter-loop line defining a main plane transverse the emitter axis, and an outer surface configured for refracting light from the emitter in a predominantly off-axis direction toward the preferential side. The outer surface includes a major lens-portion and an axially-located minor lens-portion. The major lens portion outer surface has a front region centered on the front side, a back region centered on the back side, and a middle region around the emitter axis and contiguous with the front and back regions. The minor lens-portion has a surrounding-loop surface extending from the middle region transverse the main plane and terminating at an end surface configured to direct substantially axially-parallel light from the emitter in off-axis direction toward the preferential side.

The invention provides a method of producing a multi-layer ceramic substrate comprising a laminated member having a plurality of ceramic layers made of a ceramic insulating material and a wiring conductor, comprising the steps of: preparing a raw compact having the plurality of the laminated ceramic green sheets containing the ceramic insulating material and the wiring conductor; providing raw sheet type bases on the principal plane at both ends with respect to the lamination direction of the raw compact, the raw sheet type bases containing a ceramic not to be sintered at the baking temperature of the raw compact; baking the raw compact in the state interposed between the sheet type bases so as to obtain the laminated member; and eliminating the unsintered sheet type bases; wherein the heat expansion coefficient difference of the sheet type bases and the laminated member after baking is 2.5x10-6 degK-1 or more.

A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm⁻¹ for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.

A semiconductor device comprises a BGA substrate having one principal plane furnished with a large number of solder balls, the solder balls constituting a ball grid array; a semiconductor chip mounted on another principal plane of the BGA substrate, the semiconductor chip being electrically connected to the BGA substrate by metal wires; and chip capacitors mounted on the semiconductor chip to reduce power source noise.

A radiation detecting apparatus having: a substrate; a phosphor layer which is formed on a principal plane of the substrate and converts a wavelength of a radiation; and a phosphor protective member including a phosphor protective layer which covers the phosphor layer and is adhered to the substrate, wherein the phosphor protective layer is made of a hot melt resin and an upper surface and a side surface of the phosphor layer and at least a part of at least one side surface of the substrate are covered with the phosphor protective layer. Thus, a moisture-proofing effect for penetration of the moisture from an interface between the phosphor layer and the substrate on the side surface side of the substrate can be improved. Further, by using the hot melt resin for the phosphor protective layer, simplification of manufacturing steps, remarkable reduction in the number of working steps, and remarkable reduction in costs of a product can be accomplished.

A spin torque oscillator includes a first magnetic layer, a second magnetic layer and a first nonmagnetic layer. The first magnetic layer includes a magnetic film of a magnetic material with a body-centered cubic (bcc) structure and an oriented {110} plane of the body-centered cubic structure, the oriented {110} plane being oriented substantially parallel to a principal plane of the magnetic film. The first nonmagnetic layer is disposed between the first magnetic layer and the second magnetic layer. In addition, a magnetic moment in the magnetic film precesses around an axis substantially parallel to the principal plane. Furthermore, a magnetic field is applied in a direction substantially perpendicular to the principal plane, and a current is passed perpendicularly to the principal plane.

The present invention provides, as a separator for fuel cell which is lightweight, can be easily made thin, and which has superior corrosion resistance and shape stability, a fuel cell 100 containing a separator for fuel cell 10, wherein a conductor pattern 2 is formed on one principal plane 1A of an insulation layer 1 to form a groove for a gas flow path 3 sectioned by the conductor pattern 2 on this principal plane, a conductor terminal 4 is formed on the other principal plane 1B of the insulation layer 1, and this conductor terminal 4 and the conductor pattern 2 are electrically connected by a via hole 5 penetrating the insulation layer 1, and a membrane electrode assembly (complex having an electrolyte membrane and an electrode (fuel electrode, oxygen electrode) laminated thereon) 14 having the separator for fuel cell disposed on both surfaces.

A light-shieldable film is formed on one principal plane of an optically transparent substrate, and the light-shieldable film has a first light-shieldable film and a second light-shieldable film overlying the first light-shieldable film. The first light-shieldable film is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.

Secondary electrons emitted from a sample (W) by an electron beam irradiation is deflected by a beam separator (77), and is deflected again in a perpendicular direction by an aberration correction electrostatic deflector (711) to form a magnified image on the principal plane of an auxiliary lens (712). The secondary electron beam diverged from the auxiliary lens (712) passes through axial chromatic aberration correction lenses (714-717) and images on a principal plane of an auxiliary lens (718) for a magnifying lens (719). The magnified image is formed in a position spaced apart from the optical axis. Therefore, when the secondary electron beam diverged from the auxiliary lens (712) is incident on the axial chromatic aberration correction lenses without any change, large abaxial aberration occurs. To avoid it, the auxiliary lens (712) is used to form the image of an NA aperture (724) in substantially a middle (723) in the light axis direction of the axial chromatic aberration correction lenses (714-717).

An optical device includes a light receiving element chip having: an active region formed on a principal plane of a substrate and made by arranging a plurality of light receiving pixels; a circuit region disposed around an outer circumference of the active region; a penetrating conductor provided to penetrate the substrate in the thickness direction of the substrate; and an external connection terminal provided on a back surface of the substrate facing the principal plane thereof and connected to the penetrating conductor. The optical device further includes a microlens, a planarization film, and a transparent protective film formed on the planarization film.