43 results about "Ion beam processing" patented technology

The invention relates to the technical field of in-situ detection of electron microscopes, in particular to a one-stop four-dimensional transmission scanning focused ion beam double-beam electron microscope, which comprises a vacuum cavity provided with a vacuum cavity cover; a sample table is arranged on the inner side of the vacuum cavity cover; the electron beam, the ion beam, the manipulator, the sample holder and the gas injection system are mounted on the vacuum cavity through the multifunctional in-situ sealing flange; the system further comprises a 4D STEM detector. According to the invention, electron beam observation, ion beam processing, four-dimensional scanning transmission electron microscope imaging information acquisition and in-situ electric, optical, thermal, force and other external field loading functions are integrated, and scanning electron microscope imaging, transmission electron microscope sample preparation and in-situ 4D STEM diffraction information acquisition under multi-field combined application can be carried out on a sample in one device. One-stop full-scale multi-field combined application detection is realized, the test result is prevented from being influenced by contact with air, water and other external environments in the sample transfer process, and meanwhile, the test efficiency is remarkably improved.

The invention discloses a beam energy adjustable ion beam processing device which comprises a base, a support, a negative electrode plate, a positive electrode plate, a diaphragm and an electric energy control module, a circular through hole is formed in the middle of the base, and one end of the negative electrode plate and one end of the positive electrode plate are both fixed to the base; a cylindrical ion beam channel is defined by the negative electrode plate and the positive electrode plate, the diaphragm is fixed to the base through a support, a conical channel is formed in the diaphragm, the large end of the conical channel is aligned with the end, away from the circular through hole, of the cylindrical ion beam channel, and the small end of the conical channel faces outwards. And positive and negative electrodes of the electric energy control module are respectively connected with the negative electrode plate and the positive electrode plate through wires. The invention also discloses a beam energy adjustable ion beam processing method. The beam energy adjustable ion beam processing device and the beam energy adjustable ion beam processing method have the advantages of reducing acceleration and deceleration adjusting frequency of a machine tool, meeting large-span removal amount adjusting requirements, improving processing efficiency and precision, reducing requirements for dynamic performance of the machine tool and the like.

This invention proposes an ion beam processing apparatus and method, specifically relating to the field of optical processing technology. The ion beam processing apparatus includes a processing platform, wherein a vacuum motion mechanism is fixed on one side of the processing platform, and a workpiece is fixed on the other side. A screen is fixed on one side of the vacuum motion mechanism, facing the workpiece. The screen is used to emit stripes. The ion beam processing apparatus provided by this invention emits stripes through the screen and monitors the first removal distribution of the processed material in real time through the stripe reflection method. The center of the ion beam can be directly determined through the stripe reflection method, and the dwell time can be determined by combining spatial coordinates. Finally, the first removal distribution and the second removal distribution are calculated to complete the ion beam processing and polishing, and the dwell time of the second round of processing is given. This can significantly improve the processing convergence efficiency and accuracy of ion beam polishing.

The invention discloses a special electron microscope imaging and focused ion beam processing sample table for optical fibers, and solves the problems that in the prior art, optical fiber electron microscope observation and focused ion beam processing often utilize a traditional electron microscope plane sample table to be matched with conductive adhesive to fix the optical fibers, the conductive adhesive pollutes the surfaces of the optical fibers, optical experiments are inconvenient after cutting off, and the optical fibers are prone to charge accumulation. The device comprises a base, an optical fiber bearing table and optical fiber fixing devices, a V-shaped groove is formed in the top of the optical fiber bearing table and can bear common optical fibers, the cylindrical optical fiber fixing devices are fixed to the two ends of the base, two sets of through fixing holes are symmetrically formed in the lower portion, and the optical fibers penetrate through the fixing holes and are fixed through friction force. The distance from the optical fiber to the top end of the fixing device is 3mm. The optical fiber can be firmly fixed without a conductive adhesive, surface pollution is avoided, redundant optical fibers can be wound and fixed, the length of several meters is reserved, subsequent optical experiments are facilitated, the fixing device can be independently detached, coating treatment is facilitated, use is convenient, and FIB machining whole-process operation is facilitated.

A substrate holding device can include a supporting base and supporting body oriented to receive a substrate and then reoriented to be processed by an ion beam. The supporting body can include support members that prevent and / or correct misalignment of the substrate to be processed.

Disclosed herein are approaches for using an angled ion beam treatment for patterning feature surface roughness improvement. In one approach, a method may include providing a plurality of patterned features over a stack of layers on a semiconductor substrate, wherein each of the plurality of patterned features includes a first sidewall and a second sidewall, and wherein an area of roughness is present along the first sidewall or the second sidewall. The method may further include performing an ion beam treatment to the plurality of patterned features by delivering ions at a non-zero angle relative to a perpendicular to a plane defined by an upper surface of the plurality of patterned features.

Systems, components, methods, and algorithms encoded as executable instructions for processing a sample using focused ion beams are described. A method includes processing a sample 125 by extracting a beam of ions 310 from a mixture of a first gas and a second gas. The beam can include a composition of relatively heavy ions and relatively light ions. The method can include deflecting 330 the beam of ions in accordance with a deflection pattern and directing the beam through an electromagnetic field 305 that is oblique relative to an axis of the beam. The electromagnetic field can be configured to at least partially disperse 315 the beam in space such that the deflection pattern causes the beam of ions to process a first portion of a sample surface by the relatively light ions and a second portion of the sample surface by the relatively heavy ions.

This invention discloses an automatic feeding device for ion beam processing equipment, relating to the technical field of automatic feeding equipment. It includes a ground rail module, a scissor lift trolley, a workpiece lifting mechanism, and a workpiece clamp. The ground rail module has a first linear guide rail extending in a first direction. The scissor lift trolley is movably connected to the first linear guide rail and has a lower frame, a lifting assembly connected to the lower frame, and a conveying assembly connected to the lifting assembly. The workpiece lifting mechanism is connected to the conveying assembly, and the conveying assembly can drive the workpiece lifting mechanism to move in a second direction. The workpiece lifting mechanism has a workpiece clamp support block and a lifting electric cylinder. The workpiece clamp support block supports the workpiece. The workpiece clamp is connected to the workpiece and has a support plate. The lifting electric cylinder can extend and retract in the height direction to drive the support plate to move in the height direction. This invention can improve the problem of workpieces easily falling due to manual handling and workpiece clamp assembly.

The invention relates to an electrode foil microstructure analysis and characterization method, and belongs to the technical field of aluminum electrolytic capacitors. The method comprises the following steps of: putting the electrode foil into ion beam processing equipment for delamination treatment, so that a surface layer material in a central area of a sample wafer is delaminated in a lossless manner, an internal structure is exposed, and putting the treated electrode foil sample wafer under a scanning electron microscope for observation to obtain a high-definition image of the microstructure of the electrode foil. After image contrast enhancement, denoising, fixed threshold segmentation and morphological processing, spatial calibration is carried out on a scale region, and finally, microstructure parameters such as the thickness and the perimeter of a formed film of the electrode foil and the aperture of a formed film center hole are measured and calculated. According to the method, the original microstructure in the electrode foil can be reserved to the maximum extent, a high-definition image of the microstructure of the electrode foil is obtained in a lossless mode, quantitative characterization of the microstructure of the electrode foil is achieved, and a test analysis characterization method and technical support can be provided for process regulation and control and quality control in the electrode foil research and development and production and manufacturing processes.

An ion beam source apparatus may include: a plasma chamber configured to generate plasma; and a slit structure configured to extract an ion beam from the plasma and radiate the ion beam toward a wafer, wherein the slit structure includes: a plasma plate on a side of the plasma chamber, the plasma plate including at least one opening through which the ion beam passes; at least one blocking bar within the plasma chamber, the at least one blocking bar spaced apart from the at least one opening by a gap, the gap being between the plasma plate and the at least one blocking bar in a first direction; and a lift structure connected to the at least one blocking bar, the lift structure configured to control an angle at which the ion beam passing through the at least one opening is radiated by adjusting the gap between the plasma plate and the at least one blocking bar in the first direction.

The invention relates to a lithium tantalate super-structure surface focused ion beam processing method based on a stripping layer. (1) cleaning; (2) depositing a stripping layer; (3) depositing a Cr-Pt co-sputtering mixed mask on the stripping layer; (4) carrying out annealing treatment and etching the surface of the metasurface; and (5) safely stripping the Cr-Pt co-sputtering mixed mask, and cleaning to finish the processing of the device. According to the method, the inherent highly toxic and highly corrosive safety risks of the traditional process are completely eliminated, a remarkable safety guarantee is provided for research, development and production environments, and system experiments verify that the removal efficiency and key processing precision indexes reach and are even superior to those of the traditional method, so that the removal efficiency and key processing precision indexes of the traditional method are improved while potential safety hazards are eradicated. Structural fidelity and processing precision necessary for the lithium tantalate photonic device are perfectly ensured, and a reliable technical path with safety and high performance is provided for high-precision and extensible large-scale manufacturing of the lithium tantalate photonic device.

The invention discloses a harmonic oscillator measuring and trimming integrated machine tool and an application method thereof.According to the machine tool, a height adjusting table and a vacuum tank are arranged on a vibration isolation table, and a laser interferometer is installed on the height adjusting table; the vacuum tank is internally provided with a harmonic oscillator clamping and moving mechanism with a single-axis design, an ion source for carrying out ion beam processing on a harmonic oscillator mounted on the harmonic oscillator clamping and moving mechanism, and an excitation mechanism for providing excitation for the harmonic oscillator mounted on the harmonic oscillator clamping and moving mechanism; the laser interferometer and the ion source share the same light path, so that measurement and processing of the harmonic oscillator are seamlessly connected without switching the light path, and a variable diaphragm is arranged at an ion beam emission window of the ion source. The invention aims to solve the problems of low harmonic oscillator processing efficiency caused by a traditional harmonic oscillator measuring, trimming and separating machine tool, precision attenuation caused by dynamic adjustment of an ion source or a workpiece, and precision limitation.

The application discloses a kind of carbon fiber electrode materials of hierarchical porous carbon load and its preparation method and its application in supercapacitor.The preparation method is: first, activated carbon fiber CFO is prepared by ion beam treatment method, then uniform and viscous egg white and hierarchical porous carbon containing slurry is uniformly coated on the surface of activated carbon fiber CFO, and the hierarchical porous carbon modified carbon fiber material is obtained by drying, calcination carbonization, and the carbon fiber electrode material of hierarchical porous carbon load is obtained.The method has the advantages of simple process, high efficiency, strong structure and performance controllability.Based on the adhesion of egg white, hierarchical porous carbon with good porosity and large specific surface area is loaded on the surface of carbon fiber, and during calcination carbonization, the hierarchical porous carbon is sintered with carbon fiber into one body by rearranging the carbon chain of egg white, which improves the specific surface area and porosity of carbon fiber, and improves the electrochemical performance of carbon fiber electrode.

The invention relates to the technical field of ion beam ultra-precision machining, in particular to an ion beam diameter adjusting device for ion beam machining, which comprises an adjusting main body, a graphite base, a graphite disc, a cover plate and a heat dissipation structure, and is characterized in that the adjusting main body is provided with a first central through hole; the graphite base is arranged at the other end of the adjusting main body, a graphite disc is mounted on the graphite base, a second central through hole for the ion beam to pass through is formed in the graphite disc, and the second central through hole is communicated with the first central through hole; the cover plate covers the graphite base; the heat dissipation structure comprises a heat conduction ring and a water cooling coil pipe, the heat conduction ring is arranged on the adjusting body, and the water cooling coil pipe surrounds the outer side of the heat conduction ring. According to the invention, the graphite disc is easy to replace, so that modification requirements of different spatial frequency errors are met; and an efficient heat dissipation system is integrated, absorbed heat can be conducted out in time, and thermal deformation is effectively restrained.

The application provides a neutral atom beam generating device and a neutral atom detector calibration device. The neutral atom beam generating device comprises: an ion beam generating device for emitting a mixed beam; a particle energy testing device comprising an incident end, a first exit end, a second exit end and a collection device; the incident end is used for receiving the mixed beam; the incident end and the second exit end are communicated through an arc-shaped channel, and a deflection magnetic field is arranged at the arc-shaped channel to deflect positive ions in the mixed beam and hit the collection device; the collection device is used for obtaining a first hitting position of the positive ions; the first exit end is used for emitting a first ion beam; a processing device connected with the collection device is used for determining a deflection radius of the positive ions according to the first hitting position, and determining the energy of the positive ions and neutral atoms according to the deflection radius; and a particle screening device is used for absorbing the positive ions and negative ions in the first ion beam to emit a neutral atom beam.

The invention provides an in-situ nano-mechanical test method for a specific orientation micro-area of a superfine metal wire, and relates to the technical field of material micro-nano preparation. EBSD orientation positioning and FIB double-beam system collaborative preparation of a micro-area structure with specific orientation on the superfine metal wire are realized for the first time; therefore, the in-situ nanomechanical test of the micro-area can be completed, and argon ion polishing needs to meet the resolution requirement of EBSD on grain orientation characterization. The cross section of the metal wire after pretreatment is represented by EBSD, specific orientation is selected as crystal grains, target crystal grains are accurately positioned in an IPF-Z graph of the EBSD, and the positions of the target crystal grains need to be accurately found during follow-up FIB machining. FIB is used for preparing a superfine metal wire specific orientation micro-area, a focused ion beam is used for carrying out oriented machining on the specific orientation grain micro-area to form micro-column sample parameters, and it needs to be ensured that the height and diameter ratio of a micro-column needs to meet the testing requirement of a nano-mechanical system in the preparation process.

A condenser lens works to process an ion beam into a collimated form. An electrical aperture unit is disposed between the condenser lens and the objective lens. The electrical aperture unit works to alter an area through which the ion beam, as processed by the condenser lens, passes, thereby controlling a diameter of the ion beam. A plurality of beam shielding plate units are provided each of which includes a pair of beam shielding plates which are diametrically opposed to each other across the ion beam which has passed through the condenser lens. The beam shielding plates are movable in a direction perpendicular to an optical axis of the ion beam. The beam shielding plate units are arranged around the ion beam to define a diameter of the ion beam passing therethrough.

The invention provides a bearing steel continuous gradient energy ion beam surface nanometer strengthening method. The method comprises the steps that a bearing steel base material is sequentially subjected to first-step ion beam treatment, second-step ion beam treatment and third-step ion beam treatment; the ion beam energy of the second-step ion beam treatment is higher than the energy of the first-step ion beam treatment and lower than the energy of the third-step ion beam treatment. According to the method, the surface of the bearing steel is subjected to strengthening treatment through the continuous gradient energy ion beam, a continuous gradient nano-structure modified layer which has no obvious interface with a matrix is prepared on the surface of the bearing steel, limitation of traditional ion implantation is broken through, structure mutation caused by energy mutation is avoided, and the service life of the bearing steel is prolonged. Therefore, the technical effect that the surface hardness, the tribological performance, the fatigue performance and the like are synchronously improved is achieved, and the technology is stable and suitable for various high-end bearing steel materials.

The invention is applicable to the technical field of quartz wafer surface treatment, and provides a quartz wafer high-pressure nitrogen ion beam technology surface treatment method which comprises the following steps: S1, acquiring a process chamber state parameter, an ion beam quality parameter and a quartz wafer state parameter in the process of treating a quartz wafer by a high-pressure nitrogen ion beam; and S2, respectively constructing a process chamber state monitoring model, an ion beam quality comprehensive evaluation model and a surface treatment process stability evaluation model based on the parameters obtained in the step S1, and sequentially outputting a process chamber state index, an ion beam quality index and a process stability index from the above models. According to the scheme, the three core parameters of the chamber background vacuum degree, the process gas flow and the substrate temperature serve as input of the process chamber state monitoring model, and comprehensive and accurate quantitative evaluation of the process chamber state in the high-pressure nitrogen ion beam technology surface treatment process is achieved.

The application discloses a kind of beam energy adjustable ion beam processing device, including base, support, negative electrode plate, positive electrode plate, diaphragm and electric energy control module, the middle part of base is equipped with circular through-hole, one end of negative electrode plate and positive electrode plate is fixed on base, and negative electrode plate and positive electrode plate are enclosed into cylindrical ion beam passage, diaphragm is fixed on base by support, diaphragm is equipped with conical passage, the big end of conical passage is aligned with the one end of cylindrical ion beam passage away from circular through-hole, and small end faces outward, the positive and negative poles of electric energy control module are connected with negative electrode plate and positive electrode plate respectively by wire.It also discloses a kind of beam energy adjustable ion beam processing method.This beam energy adjustable ion beam processing device and method have the advantages of reducing machine tool acceleration and deceleration adjustment frequency, meeting large-span removal amount adjustment requirements, improving processing efficiency and precision, and reducing the demand for machine tool dynamic performance.

The invention relates to a method for accurately positioning and processing a sample piece in an ion beam processing process, which comprises the following steps of: measuring beam current distribution of an ion beam through a Faraday cup, and measuring beam current density distribution and corresponding coordinates of the ion beam; the offset of the ion beam is determined by fitting the beam distribution to obtain the offset of the beam distribution center of the ion beam and the center of the Faraday cup, and the offset of the sample piece center and the center of the sample table is obtained by measuring the clamping and positioning center through a spectrum confocal displacement sensor; the processing coordinates of the sample piece are compensated by the offset of the ion beam and the offset of clamping and positioning of the sample piece, so that high-precision ion beam processing is realized; the method is scientific and reasonable in process and easy to operate, the spectrum confocal displacement sensor is combined with the Faraday cup to accurately position ion beam processing, and the processing precision of products is greatly improved.

The application discloses a machine tool integrating resonator measurement and trimming and an application method thereof. The machine tool is provided with a height adjusting table and a vacuum tank on a vibration isolation table. A laser interferometer is installed on the height adjusting table. A single-shaft designed resonator clamping and moving mechanism, an ion source for ion beam processing of a resonator installed on the resonator clamping and moving mechanism, and a vibration exciting mechanism for providing excitation to the resonator installed on the resonator clamping and moving mechanism are arranged in the vacuum tank. The laser interferometer and the ion source share the same optical path, so that the measurement and processing of the resonator are seamlessly connected without switching the optical path. A variable diaphragm is arranged at an ion beam emission window of the ion source. The application aims to solve the problems of low resonator processing efficiency, precision attenuation caused by dynamic adjustment of the ion source or the workpiece, and limited precision caused by the traditional resonator measurement and trimming separation machine tool.

The present application relates to the technical field of ion beam ultra-precision machining, and particularly relates to an ion beam diameter adjusting device for ion beam machining, comprising an adjusting main body, a graphite base, a graphite disc, a cover plate and a heat dissipation structure, wherein the adjusting main body is provided with a first central through hole; the graphite base is arranged at the other end of the adjusting main body, one graphite disc is installed on the graphite base, the graphite disc is provided with a second central through hole for the ion beam to pass through, and the second central through hole is in communication with the first central through hole; the cover plate is covered on the graphite base; and the heat dissipation structure comprises a heat conduction ring and a water-cooled coil pipe, the heat conduction ring is arranged on the adjusting main body, and the water-cooled coil pipe is arranged around the outside of the heat conduction ring. The present application is adapted to the requirements of different spatial frequency error modification by the easily-replaced graphite disc; the efficient heat dissipation system is integrated, the absorbed heat can be timely discharged, and the thermal deformation is effectively inhibited.

The application provides a fluorescence real-time navigation cryogenic focused ion beam processing device and method. The fluorescence real-time navigation cryogenic focused ion beam processing device comprises: a sample fixing assembly for carrying and moving a cryogenic sample containing a fluorescent marker; an electron gun for electron beam imaging of the cryogenic sample; an ion gun for ion beam processing of the cryogenic sample; and a fluorescence imaging system for fluorescence imaging of the cryogenic sample emitting an excitation light beam to monitor the processing of the ion beam in real time through a fluorescence image. The processing device optimizes the position of the fluorescence imaging system so that the sample fixing assembly does not interfere with the fluorescence imaging system, and major redesign of the chamber and sample fixing assembly is not required due to interference problems, thereby maximizing compatibility with existing mainstream cryogenic dual-beam scanning electron microscope structures, avoiding high-cost, complex and potentially unstable modifications.

This application discloses an ion beam processing apparatus. The stage has at least two support platforms and at least two ion sources. The stage rotates via a rotating assembly. When a workpiece is being picked up or placed on one of the support platforms, the rotating assembly drives the stage to rotate to a first angle. When the support platforms are being used to process a workpiece, the rotating assembly drives the stage to rotate to a second angle. During processing, the at least two ion sources are positioned using their respective adjustment components to align with the workpiece's processing location on the support platforms. The at least two ion sources can simultaneously process workpieces on at least two support platforms. Each ion source independently processes the workpiece on its support platform. Compared to related technologies, this improves the efficiency of workpiece processing and reduces the time cost of ion beam processing.

The invention provides a PAN material efficient pre-oxidation method based on assistance of an anode layer Hall ion source and a pre-oxidized fiber, and relates to the technical field of carbon fiber preparation, and the method mainly comprises the following steps: placing a PAN precursor or fabric in a vacuum chamber, heating to 180-270 DEG C, and carrying out heat preservation; then, working gas is introduced into the vacuum chamber, and the indoor pressure is maintained to be 0.5-5 Pa; and finally, starting an anode layer Hall ion source, and carrying out ion beam treatment on the PAN material for 5-60 minutes under the conditions that the voltage of the ion source is 100-1000V and the ion beam current is 0.5-3.0 A. According to the invention, accurate injection of PAN molecular chain energy is realized, and activation energy of cyclization reaction is significantly reduced. Through the synergistic effect of heat energy and ion beam activation, the pre-oxidation time is greatly shortened, the energy consumption is reduced, and fiber etching damage easily caused by conventional plasmas is effectively avoided through accurate energy level regulation and control.

This disclosure relates to a non-transitory storage medium, a method for processing semiconductor structures, and a computer-aided design system for process technology. In process technology computer-aided design, an etched semiconductor structure represented by a 3D post-etching inspection (ADI) profile is simulated using iterative 3D physical etch simulation, thereby generating a simulated 3D etch-after-inspection (AEI) profile. The simulated 3D AEI profile is compared with a desired AEI profile or an acquired AEI image. The iterative 3D physical etch simulation can be a particle Monte Carlo (PMC) etching simulation. The iterative 3D physical etch simulation can also be a process simulation (PE) etching simulation. The generation of the simulated 3D AEI profile may further include simulating fine-tuning of the patterned layer of the semiconductor structure performed by applying ion beam processing to the patterned layer. The simulation of fine-tuning may include modeling the mechanical deformation of the patterned layer.

A charged particle beam device 1 includes analysis means performed by a controller when a sample holder HL holding a sample SAM is installed on a stage 23. The analysis means includes a step (a) of raising a degree of vacuum of each of an observation chamber 10 and a preprocessing chamber 20 by opening a gate valve VL5, opening a valve VL1, closing a valve VL2, and driving a vacuum pump 40, a step (b) of closing the gate valve VL5 and opening the valve VL2 after the step (a), and a step (c) of processing the sample SAM by radiating an ion beam from an ion source 22 to the sample SAM while performing vacuum exhaust of the preprocessing chamber 20 by the vacuum pump 40 after the step (b). The analysis means can process the sample SAM quickly after performing the vacuum exhaust of the preprocessing chamber 20 in a short time.

This invention discloses an ion beam processing method for visible light aluminum mirrors based on an improved shaping strategy, comprising the following steps: 1) correcting the surface shape error of the aluminum mirror using a single-point diamond turning process; 2) correcting the surface shape error of the aluminum mirror corrected by the single-point diamond turning process using a magnetorheological process; 3) obtaining the surface shape error matrix R of the aluminum mirror corrected by the magnetorheological process. mrf and the amount of material removed r during magnetorheological processing m Based on the amount of material removed r m Calculate the contamination layer removal residence time matrix T in the residence time matrix of ion beam processing. c According to the surface error matrix R mrf Calculate the matrix removal residence time matrix T in the residence time matrix of ion beam processing. s The aluminum reflector, after being corrected using magnetorheological technology, is processed using an ion beam process using the aforementioned residence time matrix. This invention improves the ion beam shaping strategy to further enhance surface accuracy.

The invention relates to the technical field of ion beam processing, and provides ion beam processing equipment which comprises two excitation assemblies and a pole head device, and the two excitation assemblies are arranged at intervals in the vertical direction; the pole head device comprises a vacuum chamber and magnetic field shimming pieces, the magnetic field shimming pieces are arranged in the vacuum chamber, the pole head device can move in the first direction, the pole head device has a first state and a second state, and the first direction is perpendicular to the vertical direction; when the pole head device is in the first state, at least part of the pole head device is drawn out of the two excitation assemblies; when the pole head device is in the second state, the pole head device is located between the two excitation assemblies. The pole head device can move in the first direction so as to be switched between the first state and the second state, so that the relative position of the pole head device and the excitation assembly is changed, and the convenience of operation such as cleaning and / or improvement of the pole head device is improved.