84 results about "Ion beam processing" patented technology

The invention provides a self-adaptive error compensation method and system for focused ion beam equipment, and the method comprises the steps: obtaining a real-time error signal set generated by the focused ion beam equipment in a machining process, training a self-adaptive error compensation model according to the real-time error signal set, and generating an error compensation parameter set; inputting the error compensation parameter set into a control unit of the focused ion beam equipment, and generating a real-time compensation control instruction set; adjusting an ion source parameter and a deflection electrode voltage parameter of the focused ion beam equipment according to the real-time compensation control instruction set, and outputting an adjusted ion beam path parameter set; and performing ion beam processing on the target processing area according to the adjusted ion beam path parameter set, and monitoring morphology feature data of the processed area in real time to verify an error compensation effect. According to the invention, harmful effects caused by thermal effects, electric fields or magnetic fields can be eliminated, and the self-adaptability and long-term reliability of a compensation strategy are ensured.

The invention relates to the technical field of pulsed ion beam processing, and discloses a positioning system for a pulsed ion beam processing optical element, which can accurately predict nonlinear structure deformation in a complex thermal environment and eliminate compensation deviation caused by a traditional linear model. A multi-sensor data fusion mechanism effectively suppresses the interference of local measurement noise on a control decision, and improves the reliability of a compensation strategy. And a closed-loop control system realizes real-time verification and dynamic optimization of the compensation effect, and machining precision reduction caused by error accumulation is avoided. The submicron executing mechanism ensures that the thermal drift compensation amount is accurately converted into platform pose adjustment, the high-precision optical element machining requirement is met, and the problem that a traditional positioning system is incomplete in model input due to the single temperature field information collection dimension is solved. Meanwhile, the dynamic characteristics of the temperature-displacement coupling relation are verified through high-precision displacement data.

A method for fabricating a photonic integrated circuit (PIC), where the method includes providing a first PIC die including a first optical component covered by a first dielectric layer; performing a location specific ion beam planarizing of the first dielectric layer to form a first planarized surface; providing a second PIC die including a second optical component covered by a second dielectric layer; performing a planarizing of the second dielectric layer to form a second planarized surface; and bonding the first planarized surface of the first PIC die to the second planarized surface of the second PIC die to form a three dimensional (3D) stacked PIC die.

The invention provides a neutral atom beam generation device and a neutral atom detector calibration device. The neutral atom beam generation device comprises an ion beam generation device used for emitting a mixed beam; the particle energy testing device comprises an incident end, a first emergent end, a second emergent end and an acquisition device, the incident end is used for receiving the mixed beam; the incident end is communicated with the second emergent end through an arc-shaped channel, and a deflection magnetic field is arranged at the arc-shaped channel, so that positive ions in the mixed beam flow deflect and bombard the acquisition device; the acquisition device is used for acquiring a first bombardment position of positive ions; the first emergent end is used for emitting a first ion beam; the processing device is connected with the collecting device and used for determining the deflection radius of the positive ions according to the first bombardment position and determining the energy of the positive ions and the neutral atoms according to the deflection radius; and the particle screening device is used for absorbing positive ions and negative ions in the first ion beam so as to emit a neutral atom beam.

The invention discloses a high-precision optical element processing system based on ion beam shaping and self-adaptive detection, the optical element processing system comprises an ion beam processing module, a self-adaptive optical detection module and an intelligent control module, the ion beam processing module comprises an ion source system and a six-axis linkage workpiece table, the self-adaptive optical detection module comprises a wavelength tuning interferometer and a Hartmann wavefront sensor, the intelligent control module comprises a machining path optimization unit and a stress compensation unit, and the system realizes sub-nano-scale real-time feedback of machining errors through online detection of the Hartmann wavefront sensor and the wavelength tuning interferometer; the device breaks through the hysteresis of traditional off-line detection, solves the problem of machining deformation of ultrathin elements, supports machining of special-shaped elements such as aspheric surfaces, off-axis paraboloids and micro-lens arrays, and is suitable for different materials due to the modular design by allowing a detection module or a machining module to be replaced.

The invention belongs to the technical field of ultra-precision machining, and discloses a preparation method of a transmission electron microscope (TEM) sample of a cutting edge of a single-point diamond cutter, a Pt protective layer is deposited at the worn part of the cutting edge, the damage of a focused ion beam to the surface morphology of a notch when the sample is cut is reduced, and the TEM sample capable of observing the surface morphology and internal defects of the cutting edge at the same time is prepared. The method comprises the steps of pretreating a sample, placing the sample, covering a protective layer, etching the sample, transferring the sample, thinning the sample and the like. According to the TEM sample, the Pt protection layer is introduced in the focused ion beam machining process, damage to the surface morphology of the notch when the sample is cut by the focused ion beam is reduced, and the TEM sample with the cutting edge surface morphology and internal defects capable of being observed at the same time is prepared. According to the method, the surface morphology of the sample can be effectively protected, meanwhile, characterization of the internal defects of the cutting edge is achieved, and the method has important application value.

The invention discloses a manufacturing process of a radial magnetic flux cylinder type motor iron core, and particularly relates to the technical field of motor iron core manufacturing, and the manufacturing process comprises the steps: employing magnetron sputtering to construct a gradient insulation coating on the surface of a nanocrystalline strip, and enabling the gradient insulation coating and silicon steel sheets to be alternately laminated to form a magnetic conduction-bearing composite structure; a yoke bionic honeycomb runner and a tooth magnetic barrier groove are machined through femtosecond laser, and magnetothermal coupling optimization is achieved; multidirectional progressive stamping forming is conducted in the pulsed magnetic field environment, and grain directional arrangement and interface metallurgical bonding are achieved in combination with femtosecond laser micro-connection; the integrated eddy current detection system regulates and controls press fitting parameters in real time, and stress regulation and control are completed through two-stage microwave annealing and ion beam treatment. According to the method, the magnetic circuit efficiency and the heat dissipation performance of the iron core are effectively improved, through material-structure-process collaborative innovation, the problems of magnetothermal imbalance, grain disorder, assembly accumulative errors and the like in traditional manufacturing are solved, and the operation stability and the service life reliability of the iron core under the high-frequency and high-load working condition are remarkably improved.

An ion beam processing system includes a plasma source configured to generate plasma. A grid assembly includes a first grid including a first plurality of through holes arranged within a first circular aperture, a second grid including a second plurality of through holes arranged within a second circular aperture, and a third grid including a third plurality of through holes arranged within a third circular aperture. An aperture shaping grid is arranged between the first grid and the plasma source and includes an aperture smaller than the first, second and third circular apertures. The aperture has a shape corresponding a profile of a substrate or a shape corresponding to a spatial plasma distribution, tilted at a predetermined angle relative to a plane transverse to an ion travel direction, projected onto the plane.

The invention relates to the technical field of in-situ detection of electron microscopes, in particular to a one-stop four-dimensional transmission scanning focused ion beam double-beam electron microscope, which comprises a vacuum cavity provided with a vacuum cavity cover; a sample table is arranged on the inner side of the vacuum cavity cover; the electron beam, the ion beam, the manipulator, the sample holder and the gas injection system are mounted on the vacuum cavity through the multifunctional in-situ sealing flange; the system further comprises a 4D STEM detector. According to the invention, electron beam observation, ion beam processing, four-dimensional scanning transmission electron microscope imaging information acquisition and in-situ electric, optical, thermal, force and other external field loading functions are integrated, and scanning electron microscope imaging, transmission electron microscope sample preparation and in-situ 4D STEM diffraction information acquisition under multi-field combined application can be carried out on a sample in one device. One-stop full-scale multi-field combined application detection is realized, the test result is prevented from being influenced by contact with air, water and other external environments in the sample transfer process, and meanwhile, the test efficiency is remarkably improved.

The invention discloses a beam energy adjustable ion beam processing device which comprises a base, a support, a negative electrode plate, a positive electrode plate, a diaphragm and an electric energy control module, a circular through hole is formed in the middle of the base, and one end of the negative electrode plate and one end of the positive electrode plate are both fixed to the base; a cylindrical ion beam channel is defined by the negative electrode plate and the positive electrode plate, the diaphragm is fixed to the base through a support, a conical channel is formed in the diaphragm, the large end of the conical channel is aligned with the end, away from the circular through hole, of the cylindrical ion beam channel, and the small end of the conical channel faces outwards. And positive and negative electrodes of the electric energy control module are respectively connected with the negative electrode plate and the positive electrode plate through wires. The invention also discloses a beam energy adjustable ion beam processing method. The beam energy adjustable ion beam processing device and the beam energy adjustable ion beam processing method have the advantages of reducing acceleration and deceleration adjusting frequency of a machine tool, meeting large-span removal amount adjusting requirements, improving processing efficiency and precision, reducing requirements for dynamic performance of the machine tool and the like.

This invention proposes an ion beam processing apparatus and method, specifically relating to the field of optical processing technology. The ion beam processing apparatus includes a processing platform, wherein a vacuum motion mechanism is fixed on one side of the processing platform, and a workpiece is fixed on the other side. A screen is fixed on one side of the vacuum motion mechanism, facing the workpiece. The screen is used to emit stripes. The ion beam processing apparatus provided by this invention emits stripes through the screen and monitors the first removal distribution of the processed material in real time through the stripe reflection method. The center of the ion beam can be directly determined through the stripe reflection method, and the dwell time can be determined by combining spatial coordinates. Finally, the first removal distribution and the second removal distribution are calculated to complete the ion beam processing and polishing, and the dwell time of the second round of processing is given. This can significantly improve the processing convergence efficiency and accuracy of ion beam polishing.

The application discloses a method for analyzing the existence form of As elements in pyrite based on a combination of multiple methods, which comprises the following steps: S1, selecting pyrite particles containing multiple ring zones as the object to be detected; S2, performing electron probe analysis to circumscribe the further analysis area; S3, judging the substitution property of As to Fe or S to preliminarily determine the existence form of As elements; S4, performing focused ion beam processing and spherical aberration transmission electron microscope analysis to shoot HAADF and ABF images; and S5, analyzing the spherical aberration transmission electron microscope images by using DigitalMicrograph data processing software to analyze the intensity difference of Z contrast microscopic images of different atomic sites and the abnormal atomic space occupation of heavy elements and light elements in the ABF images. The application is based on the combination of electron probe and spherical aberration transmission electron microscope, can finely analyze the existence form of As elements in pyrite from the micron to nanometer scale, and has high reliability and sufficient substantial evidence.

The invention discloses a special electron microscope imaging and focused ion beam processing sample table for optical fibers, and solves the problems that in the prior art, optical fiber electron microscope observation and focused ion beam processing often utilize a traditional electron microscope plane sample table to be matched with conductive adhesive to fix the optical fibers, the conductive adhesive pollutes the surfaces of the optical fibers, optical experiments are inconvenient after cutting off, and the optical fibers are prone to charge accumulation. The device comprises a base, an optical fiber bearing table and optical fiber fixing devices, a V-shaped groove is formed in the top of the optical fiber bearing table and can bear common optical fibers, the cylindrical optical fiber fixing devices are fixed to the two ends of the base, two sets of through fixing holes are symmetrically formed in the lower portion, and the optical fibers penetrate through the fixing holes and are fixed through friction force. The distance from the optical fiber to the top end of the fixing device is 3mm. The optical fiber can be firmly fixed without a conductive adhesive, surface pollution is avoided, redundant optical fibers can be wound and fixed, the length of several meters is reserved, subsequent optical experiments are facilitated, the fixing device can be independently detached, coating treatment is facilitated, use is convenient, and FIB machining whole-process operation is facilitated.

Provided is an ion beam processing system including a plasma chamber including extraction opening for extracting an ion beam, an electron beam source unit disposed adjacent to the plasma chamber in a first direction and including an emission opening for emitting an electron beam, a substrate support unit provided to be movable in the first direction and to support a substrate, and a voltage supply unit configured to supply a voltage to the substrate support unit, wherein, when an electron beam emitted from the electron beam source unit is incident on the substrate, the voltage supply unit applies a positive voltage to the substrate support unit.

Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

A substrate holding device can include a supporting base and supporting body oriented to receive a substrate and then reoriented to be processed by an ion beam. The supporting body can include support members that prevent and / or correct misalignment of the substrate to be processed.

Disclosed herein are approaches for using an angled ion beam treatment for patterning feature surface roughness improvement. In one approach, a method may include providing a plurality of patterned features over a stack of layers on a semiconductor substrate, wherein each of the plurality of patterned features includes a first sidewall and a second sidewall, and wherein an area of roughness is present along the first sidewall or the second sidewall. The method may further include performing an ion beam treatment to the plurality of patterned features by delivering ions at a non-zero angle relative to a perpendicular to a plane defined by an upper surface of the plurality of patterned features.

The present invention provides an ion beam processing system and a manufacturing method of a blocker and a plasma plate assembly thereof. The ion beam processing system includes a plasma chamber, a plasma plate disposed beside the plasma chamber, the plasma plate defining a first extraction aperture, a beam blocker disposed within the plasma chamber and facing the extraction aperture, a blocker electrode disposed on a surface of the beam blocker outside the plasma chamber, and an extraction electrode disposed on a surface of the plasma plate outside the plasma chamber.

The invention relates to a device (1) for ion beam processing of an optical component (2), in particular an optical component (2) for semiconductor technology, comprising: a housing (8) having a processing space (7) for receiving the optical component (2), and an irradiation device (3) designed to generate an ion beam (4) for ion beam processing a surface (2a) of the optical component (2). The device (1) has a UV cleaning device (14) for generating UV light (16) for at least partially removing contaminants (13), in particular carbon contamination, from the surface (2a) of the optical component (2). The invention also relates to a method for at least partially removing contamination (13) from a surface (2a) of an optical component (2) arranged in such a device (1).

Systems, components, methods, and algorithms encoded as executable instructions for processing a sample using focused ion beams are described. A method includes processing a sample 125 by extracting a beam of ions 310 from a mixture of a first gas and a second gas. The beam can include a composition of relatively heavy ions and relatively light ions. The method can include deflecting 330 the beam of ions in accordance with a deflection pattern and directing the beam through an electromagnetic field 305 that is oblique relative to an axis of the beam. The electromagnetic field can be configured to at least partially disperse 315 the beam in space such that the deflection pattern causes the beam of ions to process a first portion of a sample surface by the relatively light ions and a second portion of the sample surface by the relatively heavy ions.

This invention discloses an automatic feeding device for ion beam processing equipment, relating to the technical field of automatic feeding equipment. It includes a ground rail module, a scissor lift trolley, a workpiece lifting mechanism, and a workpiece clamp. The ground rail module has a first linear guide rail extending in a first direction. The scissor lift trolley is movably connected to the first linear guide rail and has a lower frame, a lifting assembly connected to the lower frame, and a conveying assembly connected to the lifting assembly. The workpiece lifting mechanism is connected to the conveying assembly, and the conveying assembly can drive the workpiece lifting mechanism to move in a second direction. The workpiece lifting mechanism has a workpiece clamp support block and a lifting electric cylinder. The workpiece clamp support block supports the workpiece. The workpiece clamp is connected to the workpiece and has a support plate. The lifting electric cylinder can extend and retract in the height direction to drive the support plate to move in the height direction. This invention can improve the problem of workpieces easily falling due to manual handling and workpiece clamp assembly.

A method for fabricating a photonic integrated circuit (PIC), where the method includes providing a first PIC die including a first optical component covered by a first dielectric layer; performing a location specific ion beam planarizing of the first dielectric layer to form a first planarized surface; providing a second PIC die including a second optical component covered by a second dielectric layer; performing a planarizing of the second dielectric layer to form a second planarized surface; and bonding the first planarized surface of the first PIC die to the second planarized surface of the second PIC die to form a three dimensional (3D) stacked PIC die.

The invention relates to an electrode foil microstructure analysis and characterization method, and belongs to the technical field of aluminum electrolytic capacitors. The method comprises the following steps of: putting the electrode foil into ion beam processing equipment for delamination treatment, so that a surface layer material in a central area of a sample wafer is delaminated in a lossless manner, an internal structure is exposed, and putting the treated electrode foil sample wafer under a scanning electron microscope for observation to obtain a high-definition image of the microstructure of the electrode foil. After image contrast enhancement, denoising, fixed threshold segmentation and morphological processing, spatial calibration is carried out on a scale region, and finally, microstructure parameters such as the thickness and the perimeter of a formed film of the electrode foil and the aperture of a formed film center hole are measured and calculated. According to the method, the original microstructure in the electrode foil can be reserved to the maximum extent, a high-definition image of the microstructure of the electrode foil is obtained in a lossless mode, quantitative characterization of the microstructure of the electrode foil is achieved, and a test analysis characterization method and technical support can be provided for process regulation and control and quality control in the electrode foil research and development and production and manufacturing processes.

Method for structuring a substrate (202), wherein the method comprises: Structuring a resist layer (210) formed over the substrate (202), resulting in a resist structure (210); Treating the resist structure (210) with an ion beam (212), resulting in a treated resist structure (210), wherein the ion beam (212) is generated with a first gas and is directed at the resist structure (210) at an angle of inclination of at least 10 degrees; and Etching of the substrate (202) with the treated resist structure (210) as an etching mask, wherein the ion beam (212) is directed towards the resist structure (210) as a fan-shaped beam which has a unimodal distribution with rotation angles of about -50 degrees to about 50 degrees.

An ion beam source apparatus may include: a plasma chamber configured to generate plasma; and a slit structure configured to extract an ion beam from the plasma and radiate the ion beam toward a wafer, wherein the slit structure includes: a plasma plate on a side of the plasma chamber, the plasma plate including at least one opening through which the ion beam passes; at least one blocking bar within the plasma chamber, the at least one blocking bar spaced apart from the at least one opening by a gap, the gap being between the plasma plate and the at least one blocking bar in a first direction; and a lift structure connected to the at least one blocking bar, the lift structure configured to control an angle at which the ion beam passing through the at least one opening is radiated by adjusting the gap between the plasma plate and the at least one blocking bar in the first direction.

The invention relates to a lithium tantalate super-structure surface focused ion beam processing method based on a stripping layer. (1) cleaning; (2) depositing a stripping layer; (3) depositing a Cr-Pt co-sputtering mixed mask on the stripping layer; (4) carrying out annealing treatment and etching the surface of the metasurface; and (5) safely stripping the Cr-Pt co-sputtering mixed mask, and cleaning to finish the processing of the device. According to the method, the inherent highly toxic and highly corrosive safety risks of the traditional process are completely eliminated, a remarkable safety guarantee is provided for research, development and production environments, and system experiments verify that the removal efficiency and key processing precision indexes reach and are even superior to those of the traditional method, so that the removal efficiency and key processing precision indexes of the traditional method are improved while potential safety hazards are eradicated. Structural fidelity and processing precision necessary for the lithium tantalate photonic device are perfectly ensured, and a reliable technical path with safety and high performance is provided for high-precision and extensible large-scale manufacturing of the lithium tantalate photonic device.

The invention discloses a harmonic oscillator measuring and trimming integrated machine tool and an application method thereof.According to the machine tool, a height adjusting table and a vacuum tank are arranged on a vibration isolation table, and a laser interferometer is installed on the height adjusting table; the vacuum tank is internally provided with a harmonic oscillator clamping and moving mechanism with a single-axis design, an ion source for carrying out ion beam processing on a harmonic oscillator mounted on the harmonic oscillator clamping and moving mechanism, and an excitation mechanism for providing excitation for the harmonic oscillator mounted on the harmonic oscillator clamping and moving mechanism; the laser interferometer and the ion source share the same light path, so that measurement and processing of the harmonic oscillator are seamlessly connected without switching the light path, and a variable diaphragm is arranged at an ion beam emission window of the ion source. The invention aims to solve the problems of low harmonic oscillator processing efficiency caused by a traditional harmonic oscillator measuring, trimming and separating machine tool, precision attenuation caused by dynamic adjustment of an ion source or a workpiece, and precision limitation.

This invention belongs to the field of ultra-precision machining technology and discloses a method for preparing transmission electron microscopy (TEM) samples of single-point diamond tool cutting edges. By depositing a Pt protective layer at the wear area of ​​the cutting edge, the damage to the surface morphology of the notch during focused ion beam (FIP) cutting is reduced, thus preparing TEM samples that allow simultaneous observation of the surface morphology and internal defects of the cutting edge. The method includes steps such as sample pretreatment, sample placement, applying a protective layer, etching the sample, transferring the sample, and thinning the sample. This invention, by introducing a Pt protective layer during focused ion beam processing, reduces the damage to the surface morphology of the notch during sample cutting, thus preparing TEM samples that allow simultaneous observation of the surface morphology and internal defects of the cutting edge. The method of this invention can effectively protect the sample surface morphology while simultaneously characterizing internal defects of the cutting edge, and has significant application value.

The present invention relates to an optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials and its use. The optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials of the present invention comprises a surface cleaning step, a scanning electron microscope imaging step, a dual-beam alignment adjustment step, and an etching step. In the etching step, ion beam processing and electron beam imaging work simultaneously. The electron beam imaging is turned on after a preset processing pattern and before the ion beam starts processing, and is quickly turned off after the processing is completed. The optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials of the present invention can avoid deformation of the material due to heat generated by high-energy particle beam bombardment, thereby reducing performance, while maintaining the reliability of the etching process.

The application discloses a kind of carbon fiber electrode materials of hierarchical porous carbon load and its preparation method and its application in supercapacitor.The preparation method is: first, activated carbon fiber CFO is prepared by ion beam treatment method, then uniform and viscous egg white and hierarchical porous carbon containing slurry is uniformly coated on the surface of activated carbon fiber CFO, and the hierarchical porous carbon modified carbon fiber material is obtained by drying, calcination carbonization, and the carbon fiber electrode material of hierarchical porous carbon load is obtained.The method has the advantages of simple process, high efficiency, strong structure and performance controllability.Based on the adhesion of egg white, hierarchical porous carbon with good porosity and large specific surface area is loaded on the surface of carbon fiber, and during calcination carbonization, the hierarchical porous carbon is sintered with carbon fiber into one body by rearranging the carbon chain of egg white, which improves the specific surface area and porosity of carbon fiber, and improves the electrochemical performance of carbon fiber electrode.