56 results about "Pressure Atmosphere" patented technology

The invention provides a degassing device and an ink jet recording apparatus. The degassing device removes the air dissolved in the liquid in a reduced pressure atmosphere. The degassing device is provided with a liquid storage tank, a decompression device, a circulation flow path, a circulation device and a floating body. The liquid storage tank stores liquid. And the pressure reducing device is used for reducing the pressure in the liquid storage tank. The circulation flow path enables different positions of the liquid storage tank to be communicated. The circulation device circulates a liquid through the circulation flow path. And the floating body floats on the liquid level in the liquid storage tank. An inlet through which the liquid flows into the liquid storage tank from the circulation flow path is provided above the liquid level. The liquid flowing into the liquid storage tank from the inflow port falls to a portion of the floating body above the liquid level. Thus, redissolution of air can be suppressed without reducing degassing efficiency.

Heating treatment is performed by irradiating a semiconductor wafer with light in a reduced pressure atmosphere in a treatment chamber. Pressure in the treatment chamber is set to a base pressure that is a fixed value lower than atmospheric pressure when the semiconductor wafer is transported into and out of the treatment chamber. The pressure in the treatment chamber is less than the base pressure when the heating treatment is performed on the semiconductor wafer. Since the pressure in the treatment chamber is always maintained below atmospheric pressure, even if pressure variations in the treatment chamber overshoot more or less from the base pressure, the inside of the treatment chamber is always under a negative pressure relative to the outside of an apparatus. This prevents gas from leaking out of the treatment chamber.

Method for manufacturing a flexible strain sensor, comprising: Placing a flexible substrate on a movable stage in a working chamber, in which the movable stage, suitable for a desired movement according to a control signal, and a nozzle, suitable for spraying towards an upper surface of the movable stage, are installed, and with which a first pressure control unit, suitable for controlling an internal pressure of the working chamber, is combined; and preparing a printing material mixture, which comprises metal nanoparticles and carbon nanotubes (CNTs) in a powder form, which is to be introduced into a printing material tank, which is provided with an upper outlet that communicates with a nozzle via a first communication line, and a lower inlet, with which a second pressure control unit, suitable for controlling pressure, is combined. Control, by means of a control unit, a movement of the movable stage by providing a predetermined motion control signal to the movable stage in order to move the flexible substrate at a desired speed along a path which corresponds to a predetermined conductor pattern of a strain sensor, Forming a relatively low-pressure atmosphere within the working chamber by operating the first pressure control unit and simultaneously a relatively high-pressure atmosphere at a lower inlet of the pressure material tank by operating the second pressure control unit, In parallel with controlling the movement of the movable stage, the printing material mixture is forcibly transmitted in an aerosolized state through the first communication line from the printing material tank to be sprayed through the nozzle towards a surface of the flexible substrate by means of a compression wave, which is caused by a pressure difference between the low-pressure atmosphere and the high-pressure atmosphere. Direct printing of a predetermined conductor pattern of the strain sensor onto the flexible substrate by a process in which the printing material mixture, which is extruded through the nozzle, collides with the surface of the flexible substrate to create cracks on the surface, and the CNTs penetrate into the cracks and are mechanically anchored to the flexible substrate, and then the following metal nanoparticles and CNTs of the printing material mixture are deposited in a predetermined width and height on the surface of the flexible substrate. Connecting a first and a second lead wire, which extend electrically to protrude from the flexible substrate, to both ends of the predetermined conductor pattern of the strain sensor and Binding a flexible cover, which has the same size as the flexible substrate, to the surface of the flexible substrate on which the predetermined conductor pattern is printed, so that the predetermined conductor pattern is inserted between the flexible substrate and the flexible cover.

A radioactive dust and aerosol integrated treatment system comprises a negative pressure atmosphere isolation bin, a negative pressure atmosphere isolation bin, a negative pressure atmosphere isolation bin and a negative pressure atmosphere isolation bin, and an operation table is arranged in the negative pressure atmosphere isolation bin; a plurality of through holes are formed in the working surface of the operation table; the dust and particulate matter collecting and fixing bin is arranged outside the negative pressure atmosphere isolation bin, and the inlet end of the dust and particulate matter collecting and fixing bin communicates with the lower end of the through hole; the dust and particulate matter collecting and fixing bin is used for collecting and fixing dust and aerosol on the operation table; the dust and particulate matter collecting and fixing bin internally comprises a collecting container, a buffering and settling area and a spraying and fixing area; the collection container is arranged below the buffer settlement area; the spray fixing area is arranged above the buffer settlement area; the inlet end of the tail gas purification module is communicated with the outlet end of the dust and particulate matter collecting and fixing bin; the tail gas purification module comprises a fan, and when the fan is started, dust and aerosol on the through holes flow into the dust and particulate matter collecting and fixing bin.

The invention discloses a p-type tungsten disulfide nanotube bundle, a preparation method thereof and application of the p-type tungsten disulfide nanotube bundle in a photoelectric detector with adjustable light response linearity, and the method comprises the following steps: depositing an Au film on a SiO2 / Si substrate, and carrying out annealing to form a zero-dimensional Au nanoparticle catalytic layer; the method comprises the following steps: respectively placing tungsten trioxide (WO3) powder and sulfur (S) powder in different areas of a single-temperature-area tubular furnace, heating to 850-1000 DEG C in an Ar / H2 mixed gas low-pressure atmosphere, and reacting to generate a WS2 nanotube bundle with a multi-wall hollow structure; the obtained material has a cluster-shaped morphology in dense interlaced distribution, and shows stable p-type conductive characteristics. A photoelectric detector prepared based on the material has high responsivity (2.7 * 10 < 4 > A / W), high detection rate (1.6 * 10 < 13 > Jones) and quick response (15 ms) in a wave band of 375-1550 nm, and keeps stable performance in a range of 10-300 K. The method is simple in process, the growth process of the tungsten disulfide nanotube bundle can be accurately controlled, the polarity of tungsten disulfide is changed to be p-type, and large-scale preparation can be achieved.

The present application provides a probe card structure and a probe card testing method. Among them, the probe card structure is arranged opposite to the wafer stage, and includes a top component, a PCB board, and probes arranged in three layers in sequence. The top component is arranged above the PCB board through ceramics, and the probes are arranged below the PCB board through epoxy resin; the probe card structure further includes: a gas gathering ring is additionally provided at the ceramic position in the inner ring direction of the probe and extends towards the wafer stage; a plurality of air holes penetrating the PCB board are arranged around the epoxy resin corresponding to the probes; a gas gathering wall is arranged around the air holes; among them, nitrogen gas flows through the main air flow holes penetrating the PCB board between the probes in the air storage chamber in the top component and is blown towards the wafer stage direction by the constraint of the gas gathering ring; nitrogen gas also flows through the air holes and is blown towards the periphery of the wafer stage by the constraint of the gas gathering ring and the gas gathering wall, so that nitrogen gas covers the probe testing area and the periphery area of the probe testing. By ensuring a uniform pressure atmosphere in the testing area, the withstand voltage is improved to meet the testing requirements.

The invention provides a degassing device and an ink jet recording apparatus. The degassing device removes the air dissolved in the liquid in a reduced pressure atmosphere. The degassing device is provided with a liquid storage tank, a decompression device and a lifting device. The liquid storage tank is provided with a small cross-section part and a large cross-section part, the large cross-section part is arranged below or above the small cross-section part, the horizontal cross-section area of the inner space of the large cross-section part is larger than that of the small cross-section part, and the liquid storage tank is used for storing liquid. And the pressure reducing device is used for reducing the pressure in the liquid storage tank. The lifting device lifts the liquid level in the liquid storage tank to the small cross-section part and the large cross-section part. As a result, redissolution of air can be suppressed without lowering degassing efficiency.

The invention relates to the technical field of rotating target materials, in particular to a normal-pressure atmosphere sintering method of a large-size ITO rotating target material, which comprises the following steps: placing a large-size ITO target material biscuit in a normal-pressure sintering furnace, sealing the furnace body, and then carrying out pre-exhaust treatment in the furnace; a sintering furnace temperature rising program is started, meanwhile, oxygen atmosphere is introduced into the furnace, the oxygen concentration and the gas flow are controlled to be kept stable, and the steps of pre-exhausting, multi-section temperature rising sintering, precise micropore exhausting and oxygen atmosphere cooling are conducted. Normal-pressure oxygen atmosphere sintering is adopted, compared with high-pressure oxygen atmosphere sintering, high-pressure equipment is not needed, the equipment cost and the production risk are reduced, and industrial large-scale production is easier; by controlling the oxygen concentration and flow, high-temperature decomposition of SnO2 is effectively inhibited, the low-resistivity performance of the target material is ensured, the density is larger than or equal to 98.5%, the resistivity is smaller than or equal to 0.12 m omega.cm, the cost is reduced, and industrialization is easy.

The invention discloses a nitriding preparation method of an easy-to-form rare earth alloy nitride soft magnetic material. The nitriding preparation method is high in nitriding efficiency (less than or equal to 120 minutes), large in nitriding depth (greater than or equal to 90 microns), wide in powder particle size range (less than or equal to 200 microns) and low in technological condition requirement (working air pressure is less than or equal to 0.1 Mpa), and is suitable for various RE2Fe17 easy-to-form rare earth alloy materials. The chemical component of the soft magnetic material prepared by the method is RE2Fe17N3-delta, RE is a rare earth element and is selected from one or more of Ce, Y, Pr and Nd, and delta is a nitrogen deficiency coefficient. The easy-to-face type rare earth soft magnetic nitride prepared by the method has good high-frequency magnetism. Compared with a flowing atmosphere and high-pressure atmosphere nitriding process, the nitriding method has the advantages that on one hand, the requirement for the small particle size of powder can be lowered, the powder manufacturing difficulty is lowered, and the oxidation problem is effectively avoided; on the other hand, flowing gases such as H2 and NH3 do not need to be provided in the nitriding process, so that the air pressure and the requirements on high-pressure reaction equipment can be obviously reduced.

According to the present invention, a plurality of chips obtained by dicing a wafer and an adhesive sheet affixed to the backs of the plurality of chips are contained in a container, a low-pressure atmosphere is created in the interior of the container by performing a vacuum process, the plurality of chips and the adhesive sheet are irradiated with UV rays from the back side inside the container in which the low-pressure atmosphere is maintained, the adhesive sheet is brought into contact with an uneven surface inside the container in which the low-pressure atmosphere is maintained, a gas is introduced into the space on the front side of the plurality of chips and the adhesive sheet while maintaining the low-pressure atmosphere in the space on the back side of the plurality of chips and the adhesive sheet, and the pressure difference between the space on the back side and the space on the front side presses and flexes the adhesive sheet against the uneven surface, thus partially peeling off the adhesive sheet from the plurality of chips.

The invention provides a degassing device and an ink jet recording apparatus. The degassing device removes air dissolved in the liquid in a reduced pressure atmosphere. The degassing device is provided with a liquid storage tank, a decompression device, a circulation flow path, a circulation device and a control device. The liquid storage tank is used for storing liquid. And the pressure reducing device is used for reducing the pressure in the liquid storage tank. And the circulating flow path enables different positions of the liquid storage tank to be communicated. The circulation device circulates the liquid through the circulation flow path. The control device drives the circulation device at least one of the time before the pressure reducing device is driven and the time before the liquid storage tank after pressure reduction is opened to the atmosphere. Therefore, the load of the degasser caused by pressure reduction can be reduced.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having an inner space; a plasma source configured to apply an electric field; a first gas supply unit configured to supply a first process gas to a region to which the plasma source applies the electric field, the first process gas excited to a plasma when the first process gas is applied with an electric field of a first intensity at a first pressure atmosphere; a support unit disposed in the inner space and configured to support a substrate to be treated; and an electrodeless lamp disposed above the substrate in the inner space, and wherein the electrodeless lamp includes an electric field transmissive housing having a discharging space therein; and a discharging material including a luminous material and filling the discharging space, the discharging space of the housing being pressurized to a second pressure, and the discharging material discharging and luminating when applied with an electric field of a second intensity higher than the first intensity at a second pressure.

The present invention belongs to the field of manufacturing cracking furnace tubes, and particularly relates to an anti-coking furnace tube with a gradient composite oxide layer and a manufacturing method thereof. The composition of the anti-coking furnace tube includes Fe, Ni, Cr, Si, Nb, Al, and C, as well as trace elements Mn and Y. After subjecting the anti-coking furnace tube to low-temperature and high-temperature heat treatments in a low oxygen pressure atmosphere, a gradient composite oxide layer is formed on the surface of the furnace tube. The inner surface is a continuous and dense Al2O3 oxide layer, and the outer surface is an (Al, M)2O3 oxide layer, where M is any one of Mn, Cr, or Si. This gradient composite oxide layer has good adhesion, high-temperature stability, and anti-coking performance.

Provided are an apparatus and a method for treating a substrate at a high-pressure atmosphere. The apparatus for treating the substrate includes a first body and a second body combined with each other to define a treatment space in which the substrate is treated, a sealing member interposed between the first body and the second body to seal the treatment space from an outside at a position in which the first body is in close contact with the second body, and a driving member to drive the first body or the second body such that the treatment space is open or closed. The sealing member is positioned in a sealing groove formed in the first body. The sealing member is deformed to be in close contact with the second body by pressure of the treatment space when a process is performed.

To provide a heat treatment device and a heat treatment method capable of preventing gas leakage from a treatment chamber.SOLUTION: In a processing chamber, a semiconductor wafer is irradiated with light in a reduced pressure atmosphere to perform heat treatment. When the semiconductor wafer is loaded into and unloaded from the processing chamber, the pressure in the processing chamber is set to a base pressure Pb that is a certain value lower than atmospheric pressure Pa. When the semiconductor wafer is subjected to heat treatment, the pressure in the processing chamber is less than the base pressure Pb. Since the pressure in the processing chamber is always maintained lower than atmospheric pressure Pa, even when the pressure fluctuation in the chamber slightly overshoots the base pressure Pb, the inside of the processing chamber is always at a negative pressure relative to the outside of the device, and gas leakage from the processing chamber can be prevented.SELECTED DRAWING: Figure 11

The invention relates to an alkali-free glass substrate. The present invention provides an alkali-free glass substrate capable of easily removing bubbles contained in molten glass in a reduced pressure atmosphere. The present invention relates to an alkali-free glass substrate containing 54%-68% of SiO2, 10%-25% of Al2O3, 0.1%-5.5% of B2O3, and 8%-26% of MgO + CaO + SrO + BaO in terms of mass% of oxides, characterized in that the alkali-free glass substrate has a [beta]-OH of 0.15 mm-1 to 0.35 mm-1, a Cl content of 0.15%-0.3% by mass, and a bubble growth index I represented by formula (1) of 320 or more, I = 590.5 [[beta]-OH] + 874.1 [Cl]-5.7 [B2O3]-33.3 (1) in which [beta]-OH] and Cl are contained in the alkali-free glass substrate, and in which [beta]-OH] and Cl are not contained in the alkali-free glass substrate, and B2O3 is [beta-OH] represents beta-OH (mm-1) of the alkali-free glass substrate, [Cl] represents the Cl content (mass%) of the alkali-free glass substrate, and [B2O3] represents the B2O3 content (mass%) of the alkali-free glass substrate.

To prevent the positional shift of the constituent material of a laminate before bonding treatment is applied.SOLUTION: The method for producing a composite plate material includes a preparing step S1 of preparing a laminate LM including a glass-based plate material 3a and a plate-shaped material 2 as a laminate, a clamping step S2 of obtaining a clamped body CB by disposing a pair of backing plates 5a and 5b on both front and back sides of the laminate LM, a binding step S3 of binding the clamped body CB with a band member 7, and a joining step S6 of obtaining a composite plate material 1 in which the glass-based plate material 3a and the plate-shaped material 2 are joined to each other by subjecting the clamped body CB to a joining treatment of heating under a negative pressure atmosphere.SELECTED DRAWING: Figure 2

The invention provides a degassing device. The degassing device removes air dissolved in the liquid in a reduced pressure atmosphere. The degassing device is provided with a liquid storage tank, a decompression device, an impregnation component and a lifting device. The liquid storage tank is used for storing liquid. And the pressure reducing device is used for reducing the pressure in the liquid storage tank. And the dipping part is dipped in the liquid in the liquid storage tank. The lifting device is used for lifting the dipping component between a dipping state and a retreating state, and the dipping state refers to a state that the dipping component is positioned on the liquid level of the liquid in the liquid storage tank; the retracted state is a state in which the immersion member is retracted from the liquid level in the liquid tank. Thus, redissolution of air can be suppressed without lowering degassing efficiency.

A sintered body containing polycrystalline grains of a metal oxynitride containing at least two metal elements, wherein Ba and at least one metal element of a crystal phase of the sintered body are contained in a triple point that is not a void between the polycrystalline grains. A method for producing the sintered body includes sintering a mixture of at least a metal oxynitride as a main component and a sintering aid containing cyanamide in an atmosphere containing nitrogen or a rare gas or in a reduced-pressure atmosphere of 10 Pa or less while applying a mechanical pressure with a retention time at a maximum heating temperature during the sintering set to 1 minute to 10 minutes.

Provided are a substrate processing device and a substrate processing method which are for forming a nitride semiconductor layer on a substrate.　The substrate processing device comprises: a film deposition chamber that has a subatmospheric pressure atmosphere and accommodates a substrate support part for supporting a substrate; a first gas feeder that supplies a mixture gas including a nitrogen-containing starting-material gas; a remote plasma unit that receives supply of the mixture gas including a nitrogen-containing starting-material gas, generates a plasma of the mixture gas, forms hydrazine in the plasma, and supplies a nitrogen-containing gas including the hydrazine to the film deposition chamber; and a second gas feeder that supplies an organometal-containing gas to the film deposition chamber. The organometal-containing gas is reacted with the nitrogen-containing gas to form a nitride semiconductor layer on the substrate.

The present invention provides a substrate transport device, a substrate processing system, and a substrate processing method. In a substrate transport device that transports substrates in a reduced-pressure atmosphere, the position of the substrate can be constantly monitored. The substrate transport device of the present invention transports substrates to a substrate processing device in a reduced-pressure atmosphere, and includes: a substrate holding portion for holding the substrate; and a substrate measuring portion disposed on the substrate holding portion for measuring the position of the substrate relative to the substrate holding portion.

This invention provides a method for preparing infinite-layer nickel-based high-temperature superconducting thin films using metal-organic chemical vapor deposition (MOCVD). The main concept involves dissolving a soluble metal cation precursor in a solvent at a stoichiometric ratio, forming a thin film precursor on a single-crystal perovskite oxide substrate via MOCVD; subsequently, annealing under a high-oxygen-pressure atmosphere yields a thermodynamically metastable perovskite intermediate; finally, reduction conditions are used to transform it into an infinite-layer nickel-based high-temperature superconducting thin film. The advantages of this method include low cost, suitability for large-scale, large-area preparation of superconducting thin films, flexible control of film composition, and high reproducibility. The superconducting thin film prepared using this method exhibits zero resistance below 40 K and at ambient pressure, promising to promote the large-scale application of nickel-based superconducting materials in superconducting wires and tapes and in electronics, including high-field magnet coils, high-frequency low-loss cables, superconducting computers, superconducting antennas, and superconducting microwave devices.

The invention discloses a negative pressure atmosphere isolation device with a hoisting opening and a hoisting method, the hoisting opening is formed in the top end of the negative pressure atmosphere isolation device, the hoisting opening is of a cylindrical structure made of a flexible material, the inner diameter of the hoisting opening is larger than the size of the cross section of a to-be-hoisted object, and the length of the hoisting opening is larger than the height of the to-be-hoisted object; one end of the cylindrical structure is adhered and sealed with the top covering surface of the atmosphere isolation device, the end is the end A of the hoisting opening, the other end of the cylindrical structure is sealed by the tying opening, the end is the end B of the hoisting opening, the middle part of the cylindrical structure can be sealed by the tying opening, and the middle part is the position M of the hoisting opening, so that the problem of negative pressure reduction or failure caused by the opening when the negative pressure atmosphere isolation device enters and exits is effectively solved; and meanwhile, diffusion and cross infection of pollutants contaminating the hoisting items are avoided, and guarantee is provided for safety of personnel and equipment in the operation process.

Provided is an air compressor that suppresses a rise in delivery temperature due to a change in atmospheric pressure, and consequently improves the life of parts. The air compressor 1 includes a motor 2, a compressor main body 3 driven by the motor 2 to compress air, a delivery pressure sensor 12 that senses a delivery pressure of the compressor main body 3, an atmospheric pressure sensor 13 that senses an atmospheric pressure, and a controller 15. The controller 15 compares the delivery pressure sensed by the delivery pressure sensor 12 with a set pressure, and performs operation control based on a result of the comparison. The controller 15 corrects the set pressure such that a ratio between the atmospheric pressure sensed by the atmospheric pressure sensor 13 and the set pressure becomes a set value set in advance.

A first transfer device and a second transfer device are configured to transfer a first substrate and a second substrate in a normal pressure atmosphere. A third transfer device is configured to transfer the first substrate and the second substrate in a decompressed atmosphere. A load lock chamber has accommodation sections allowed to accommodate therein the first substrate and the second substrate, and is allowed to switch an inside of the accommodation sections between the normal pressure atmosphere and the decompressed atmosphere. Multiple gates are respectively disposed on three different sides of the load lock chamber, and allowed to open or close the load lock chamber. The first transfer device, the second transfer device, and the third transfer device carry the first substrate and the second substrate into / out of the load lock chamber through different gates among the multiple gates.

The present application provides a method for manufacturing an aluminum nitride sintered body, which has a molding step of molding a molding material containing an aluminum nitride powder, a sintering aid, and a binder; a debinding step of heating the molded body in an inert gas atmosphere or a reduced pressure atmosphere at 500 to 600°C; and a heating step of firing the molded body after debinding in a nitrogen atmosphere at 1500 to 1700°C for 7 hours or more, and then firing in a nitrogen atmosphere at 1750 to 1880°C for 3 to 5 hours. The volume resistivity of the aluminum nitride sintered body is 5.0 x 10 12 Ω·cm or more.

This method for producing a laminated film comprises: a plasma treatment step (S2) in which a first surface (10a) of a base film (10) is subjected to plasma treatment in a reduced-pressure atmosphere in a chamber; and a film formation step (S3) in which, after the plasma treatment step (S2), an inorganic material layer (20) is formed on the first surface (10a) in a reduced-pressure atmosphere. The plasma processing is performed using an inductively coupled plasma containing argon gas, which is generated by applying high-frequency power to the low-inductance antenna. In the plasma treatment step (S2), the wavelength of the maximum emission peak intensity Imax in the wavelength range of 300-900 nm in the plasma emission is set to be within 811-812 nm, and the ratio of the intensity I2 of the emission peak in the wavelength range of 603-604 nm to the intensity I1 of the emission peak in the wavelength range of 706-707 nm is set to be 0.50 or less.

To manufacture an article in which adhesion between a metal member and a transfer layer is good, floating of a transfer sheet at a corner part is suppressed, and wrinkles of the transfer sheet are suppressed.SOLUTION: A metal member preparation step of preparing a surface-treated metal member, a transfer sheet preparation step of preparing a transfer sheet having a release film and a transfer layer disposed on one surface of the release film, the transfer layer having a first protective layer and an adhesive layer in this order in the thickness direction from the release film side, and a bonding step of bonding the transfer sheet and the metal member by heating the laminate, wherein the thickness of the bonding layer of the transfer sheet is 1.5 μm or more, the thermal shrinkage ratio of the release film is 3.4% or less, and the loop stiffness of the release film is 35.0 mN / 15 mm or less.SELECTED DRAWING: Figure 1

This invention discloses a method and system for melting and splicing modular large components suitable for microgravity environments, belonging to the field of on-orbit manufacturing technology for space. The method includes: providing prefabricated metal modules; installing a constraint mold around the surfaces to be joined to form a closed cavity; joining the surfaces to be joined; melting the joint area by applying current and using contact resistance heating; applying pressure and acting on the molten metal through the constraint mold; and removing the mold after pressure holding and solidification. Preferably, the surfaces to be joined are mutually matching non-planar geometric joint surfaces, with a micro-bump array and flow-guiding microgrooves on their surfaces; the method also includes being carried out under a low-pressure inert atmosphere of 200-400 Pa. The system includes a module storage unit and a connection operation unit. This invention, through the organic combination of constraint molds and electric heating, combined with a precisely designed non-planar interface and a low-pressure atmosphere, achieves high-quality and high-safety connection of metal modules under microgravity environments, providing core technical support for the on-orbit construction of space stations.

Packaged food items, such as a fresh, ready to eat salad, comes in a container maintaining a substantially inert, low pressure atmosphere therein. The salad includes a salad dressing positioned lowermost in the container and a lettuce item positioned upper most in the container. Various additional food items are positioned within the container between the salad dressing and the lettuce item. The additional food items include pickled, raw or cooked vegetable items, grain or pasta items, protein items and cheese items. All of the food items are present in different measured proportions depending on the combination of items in the container. The additional food items are layered in a particular order also dependent upon the combination of items present in the container.