31 results about "Pressure Atmosphere" patented technology

The invention provides a degassing device and an ink jet recording apparatus. The degassing device removes the air dissolved in the liquid in a reduced pressure atmosphere. The degassing device is provided with a liquid storage tank, a decompression device, a circulation flow path, a circulation device and a floating body. The liquid storage tank stores liquid. And the pressure reducing device is used for reducing the pressure in the liquid storage tank. The circulation flow path enables different positions of the liquid storage tank to be communicated. The circulation device circulates a liquid through the circulation flow path. And the floating body floats on the liquid level in the liquid storage tank. An inlet through which the liquid flows into the liquid storage tank from the circulation flow path is provided above the liquid level. The liquid flowing into the liquid storage tank from the inflow port falls to a portion of the floating body above the liquid level. Thus, redissolution of air can be suppressed without reducing degassing efficiency.

Method for manufacturing a flexible strain sensor, comprising: Placing a flexible substrate on a movable stage in a working chamber, in which the movable stage, suitable for a desired movement according to a control signal, and a nozzle, suitable for spraying towards an upper surface of the movable stage, are installed, and with which a first pressure control unit, suitable for controlling an internal pressure of the working chamber, is combined; and preparing a printing material mixture, which comprises metal nanoparticles and carbon nanotubes (CNTs) in a powder form, which is to be introduced into a printing material tank, which is provided with an upper outlet that communicates with a nozzle via a first communication line, and a lower inlet, with which a second pressure control unit, suitable for controlling pressure, is combined. Control, by means of a control unit, a movement of the movable stage by providing a predetermined motion control signal to the movable stage in order to move the flexible substrate at a desired speed along a path which corresponds to a predetermined conductor pattern of a strain sensor, Forming a relatively low-pressure atmosphere within the working chamber by operating the first pressure control unit and simultaneously a relatively high-pressure atmosphere at a lower inlet of the pressure material tank by operating the second pressure control unit, In parallel with controlling the movement of the movable stage, the printing material mixture is forcibly transmitted in an aerosolized state through the first communication line from the printing material tank to be sprayed through the nozzle towards a surface of the flexible substrate by means of a compression wave, which is caused by a pressure difference between the low-pressure atmosphere and the high-pressure atmosphere. Direct printing of a predetermined conductor pattern of the strain sensor onto the flexible substrate by a process in which the printing material mixture, which is extruded through the nozzle, collides with the surface of the flexible substrate to create cracks on the surface, and the CNTs penetrate into the cracks and are mechanically anchored to the flexible substrate, and then the following metal nanoparticles and CNTs of the printing material mixture are deposited in a predetermined width and height on the surface of the flexible substrate. Connecting a first and a second lead wire, which extend electrically to protrude from the flexible substrate, to both ends of the predetermined conductor pattern of the strain sensor and Binding a flexible cover, which has the same size as the flexible substrate, to the surface of the flexible substrate on which the predetermined conductor pattern is printed, so that the predetermined conductor pattern is inserted between the flexible substrate and the flexible cover.

A radioactive dust and aerosol integrated treatment system comprises a negative pressure atmosphere isolation bin, a negative pressure atmosphere isolation bin, a negative pressure atmosphere isolation bin and a negative pressure atmosphere isolation bin, and an operation table is arranged in the negative pressure atmosphere isolation bin; a plurality of through holes are formed in the working surface of the operation table; the dust and particulate matter collecting and fixing bin is arranged outside the negative pressure atmosphere isolation bin, and the inlet end of the dust and particulate matter collecting and fixing bin communicates with the lower end of the through hole; the dust and particulate matter collecting and fixing bin is used for collecting and fixing dust and aerosol on the operation table; the dust and particulate matter collecting and fixing bin internally comprises a collecting container, a buffering and settling area and a spraying and fixing area; the collection container is arranged below the buffer settlement area; the spray fixing area is arranged above the buffer settlement area; the inlet end of the tail gas purification module is communicated with the outlet end of the dust and particulate matter collecting and fixing bin; the tail gas purification module comprises a fan, and when the fan is started, dust and aerosol on the through holes flow into the dust and particulate matter collecting and fixing bin.

The invention discloses a p-type tungsten disulfide nanotube bundle, a preparation method thereof and application of the p-type tungsten disulfide nanotube bundle in a photoelectric detector with adjustable light response linearity, and the method comprises the following steps: depositing an Au film on a SiO2 / Si substrate, and carrying out annealing to form a zero-dimensional Au nanoparticle catalytic layer; the method comprises the following steps: respectively placing tungsten trioxide (WO3) powder and sulfur (S) powder in different areas of a single-temperature-area tubular furnace, heating to 850-1000 DEG C in an Ar / H2 mixed gas low-pressure atmosphere, and reacting to generate a WS2 nanotube bundle with a multi-wall hollow structure; the obtained material has a cluster-shaped morphology in dense interlaced distribution, and shows stable p-type conductive characteristics. A photoelectric detector prepared based on the material has high responsivity (2.7 * 10 < 4 > A / W), high detection rate (1.6 * 10 < 13 > Jones) and quick response (15 ms) in a wave band of 375-1550 nm, and keeps stable performance in a range of 10-300 K. The method is simple in process, the growth process of the tungsten disulfide nanotube bundle can be accurately controlled, the polarity of tungsten disulfide is changed to be p-type, and large-scale preparation can be achieved.

The invention provides a degassing device and an ink jet recording apparatus. The degassing device removes the air dissolved in the liquid in a reduced pressure atmosphere. The degassing device is provided with a liquid storage tank, a decompression device and a lifting device. The liquid storage tank is provided with a small cross-section part and a large cross-section part, the large cross-section part is arranged below or above the small cross-section part, the horizontal cross-section area of the inner space of the large cross-section part is larger than that of the small cross-section part, and the liquid storage tank is used for storing liquid. And the pressure reducing device is used for reducing the pressure in the liquid storage tank. The lifting device lifts the liquid level in the liquid storage tank to the small cross-section part and the large cross-section part. As a result, redissolution of air can be suppressed without lowering degassing efficiency.

The invention relates to the technical field of rotating target materials, in particular to a normal-pressure atmosphere sintering method of a large-size ITO rotating target material, which comprises the following steps: placing a large-size ITO target material biscuit in a normal-pressure sintering furnace, sealing the furnace body, and then carrying out pre-exhaust treatment in the furnace; a sintering furnace temperature rising program is started, meanwhile, oxygen atmosphere is introduced into the furnace, the oxygen concentration and the gas flow are controlled to be kept stable, and the steps of pre-exhausting, multi-section temperature rising sintering, precise micropore exhausting and oxygen atmosphere cooling are conducted. Normal-pressure oxygen atmosphere sintering is adopted, compared with high-pressure oxygen atmosphere sintering, high-pressure equipment is not needed, the equipment cost and the production risk are reduced, and industrial large-scale production is easier; by controlling the oxygen concentration and flow, high-temperature decomposition of SnO2 is effectively inhibited, the low-resistivity performance of the target material is ensured, the density is larger than or equal to 98.5%, the resistivity is smaller than or equal to 0.12 m omega.cm, the cost is reduced, and industrialization is easy.

The invention provides a degassing device and an ink jet recording apparatus. The degassing device removes air dissolved in the liquid in a reduced pressure atmosphere. The degassing device is provided with a liquid storage tank, a decompression device, a circulation flow path, a circulation device and a control device. The liquid storage tank is used for storing liquid. And the pressure reducing device is used for reducing the pressure in the liquid storage tank. And the circulating flow path enables different positions of the liquid storage tank to be communicated. The circulation device circulates the liquid through the circulation flow path. The control device drives the circulation device at least one of the time before the pressure reducing device is driven and the time before the liquid storage tank after pressure reduction is opened to the atmosphere. Therefore, the load of the degasser caused by pressure reduction can be reduced.

To prevent the positional shift of the constituent material of a laminate before bonding treatment is applied.SOLUTION: The method for producing a composite plate material includes a preparing step S1 of preparing a laminate LM including a glass-based plate material 3a and a plate-shaped material 2 as a laminate, a clamping step S2 of obtaining a clamped body CB by disposing a pair of backing plates 5a and 5b on both front and back sides of the laminate LM, a binding step S3 of binding the clamped body CB with a band member 7, and a joining step S6 of obtaining a composite plate material 1 in which the glass-based plate material 3a and the plate-shaped material 2 are joined to each other by subjecting the clamped body CB to a joining treatment of heating under a negative pressure atmosphere.SELECTED DRAWING: Figure 2

The invention provides a degassing device. The degassing device removes air dissolved in the liquid in a reduced pressure atmosphere. The degassing device is provided with a liquid storage tank, a decompression device, an impregnation component and a lifting device. The liquid storage tank is used for storing liquid. And the pressure reducing device is used for reducing the pressure in the liquid storage tank. And the dipping part is dipped in the liquid in the liquid storage tank. The lifting device is used for lifting the dipping component between a dipping state and a retreating state, and the dipping state refers to a state that the dipping component is positioned on the liquid level of the liquid in the liquid storage tank; the retracted state is a state in which the immersion member is retracted from the liquid level in the liquid tank. Thus, redissolution of air can be suppressed without lowering degassing efficiency.

Provided are a substrate processing device and a substrate processing method which are for forming a nitride semiconductor layer on a substrate.　The substrate processing device comprises: a film deposition chamber that has a subatmospheric pressure atmosphere and accommodates a substrate support part for supporting a substrate; a first gas feeder that supplies a mixture gas including a nitrogen-containing starting-material gas; a remote plasma unit that receives supply of the mixture gas including a nitrogen-containing starting-material gas, generates a plasma of the mixture gas, forms hydrazine in the plasma, and supplies a nitrogen-containing gas including the hydrazine to the film deposition chamber; and a second gas feeder that supplies an organometal-containing gas to the film deposition chamber. The organometal-containing gas is reacted with the nitrogen-containing gas to form a nitride semiconductor layer on the substrate.

This invention provides a method for preparing infinite-layer nickel-based high-temperature superconducting thin films using metal-organic chemical vapor deposition (MOCVD). The main concept involves dissolving a soluble metal cation precursor in a solvent at a stoichiometric ratio, forming a thin film precursor on a single-crystal perovskite oxide substrate via MOCVD; subsequently, annealing under a high-oxygen-pressure atmosphere yields a thermodynamically metastable perovskite intermediate; finally, reduction conditions are used to transform it into an infinite-layer nickel-based high-temperature superconducting thin film. The advantages of this method include low cost, suitability for large-scale, large-area preparation of superconducting thin films, flexible control of film composition, and high reproducibility. The superconducting thin film prepared using this method exhibits zero resistance below 40 K and at ambient pressure, promising to promote the large-scale application of nickel-based superconducting materials in superconducting wires and tapes and in electronics, including high-field magnet coils, high-frequency low-loss cables, superconducting computers, superconducting antennas, and superconducting microwave devices.

A first transfer device and a second transfer device are configured to transfer a first substrate and a second substrate in a normal pressure atmosphere. A third transfer device is configured to transfer the first substrate and the second substrate in a decompressed atmosphere. A load lock chamber has accommodation sections allowed to accommodate therein the first substrate and the second substrate, and is allowed to switch an inside of the accommodation sections between the normal pressure atmosphere and the decompressed atmosphere. Multiple gates are respectively disposed on three different sides of the load lock chamber, and allowed to open or close the load lock chamber. The first transfer device, the second transfer device, and the third transfer device carry the first substrate and the second substrate into / out of the load lock chamber through different gates among the multiple gates.

The present application provides a method for manufacturing an aluminum nitride sintered body, which has a molding step of molding a molding material containing an aluminum nitride powder, a sintering aid, and a binder; a debinding step of heating the molded body in an inert gas atmosphere or a reduced pressure atmosphere at 500 to 600°C; and a heating step of firing the molded body after debinding in a nitrogen atmosphere at 1500 to 1700°C for 7 hours or more, and then firing in a nitrogen atmosphere at 1750 to 1880°C for 3 to 5 hours. The volume resistivity of the aluminum nitride sintered body is 5.0 x 10 12 Ω·cm or more.

This method for producing a laminated film comprises: a plasma treatment step (S2) in which a first surface (10a) of a base film (10) is subjected to plasma treatment in a reduced-pressure atmosphere in a chamber; and a film formation step (S3) in which, after the plasma treatment step (S2), an inorganic material layer (20) is formed on the first surface (10a) in a reduced-pressure atmosphere. The plasma processing is performed using an inductively coupled plasma containing argon gas, which is generated by applying high-frequency power to the low-inductance antenna. In the plasma treatment step (S2), the wavelength of the maximum emission peak intensity Imax in the wavelength range of 300-900 nm in the plasma emission is set to be within 811-812 nm, and the ratio of the intensity I2 of the emission peak in the wavelength range of 603-604 nm to the intensity I1 of the emission peak in the wavelength range of 706-707 nm is set to be 0.50 or less.

To manufacture an article in which adhesion between a metal member and a transfer layer is good, floating of a transfer sheet at a corner part is suppressed, and wrinkles of the transfer sheet are suppressed.SOLUTION: A metal member preparation step of preparing a surface-treated metal member, a transfer sheet preparation step of preparing a transfer sheet having a release film and a transfer layer disposed on one surface of the release film, the transfer layer having a first protective layer and an adhesive layer in this order in the thickness direction from the release film side, and a bonding step of bonding the transfer sheet and the metal member by heating the laminate, wherein the thickness of the bonding layer of the transfer sheet is 1.5 μm or more, the thermal shrinkage ratio of the release film is 3.4% or less, and the loop stiffness of the release film is 35.0 mN / 15 mm or less.SELECTED DRAWING: Figure 1

This invention discloses a method and system for melting and splicing modular large components suitable for microgravity environments, belonging to the field of on-orbit manufacturing technology for space. The method includes: providing prefabricated metal modules; installing a constraint mold around the surfaces to be joined to form a closed cavity; joining the surfaces to be joined; melting the joint area by applying current and using contact resistance heating; applying pressure and acting on the molten metal through the constraint mold; and removing the mold after pressure holding and solidification. Preferably, the surfaces to be joined are mutually matching non-planar geometric joint surfaces, with a micro-bump array and flow-guiding microgrooves on their surfaces; the method also includes being carried out under a low-pressure inert atmosphere of 200-400 Pa. The system includes a module storage unit and a connection operation unit. This invention, through the organic combination of constraint molds and electric heating, combined with a precisely designed non-planar interface and a low-pressure atmosphere, achieves high-quality and high-safety connection of metal modules under microgravity environments, providing core technical support for the on-orbit construction of space stations.

A processing device (1A) includes a vacuum chamber (200), a heating part (Pm), a sputtering part (Ps), and conveyance parts (70). The heating part (Pm) and the sputtering part (Ps) are positioned inside the vacuum chamber (200). The heating part (Pm) heats an object (10) by irradiation with microwaves under a reduced-pressure atmosphere. The sputtering part (Ps) performs sputtering film formation on the object (10) under the reduced-pressure atmosphere. The conveyance parts (70) convey the object (10) to the heating part (Pm) and the sputtering part (Ps) in the stated order.

This bonding system (1) is provided with a first transfer device (61), a surface modification device (33), a load interlock vacuum chamber (31), a transfer chamber (32), a substrate processing device (34), and a bonding device (41). The first conveying device conveys a first substrate (W1) and a second substrate (W2). A surface modification device (33) modifies the surfaces of the first substrate (W1) and the second substrate (W2). A load interlock vacuum chamber (31) switches the atmosphere in the chamber between an atmospheric atmosphere and a reduced-pressure atmosphere. The transfer chamber (32) is provided with a second transfer device (32a) for transferring the first substrate (W1) and the second substrate (W2) between the load interlock vacuum chamber (31) and the surface modification device (33). The surface modification device (33) is provided with a first gas supply unit (122) and a first switching unit (126). The first gas supply unit (122) is capable of supplying a plurality of types of gases to the surface modification device (33). The first switching unit (126) switches the type of gas to be supplied to the surface modification device (33). The conveyance chamber (32) is provided with a second gas supply unit (130) and a second switching unit (136). The second gas supply unit (130) is capable of supplying a plurality of types of gases to the transport chamber (32). The second switching unit (136) switches the type of gas supplied to the conveyance chamber (32).

The utility model relates to the field of combustion devices, in particular to a high-pressure atmosphere pulverized coal combustion device which comprises a pressure-resistant shell and a base, a flat flame combustor is arranged in the pressure-resistant shell and located above the base, ignition electrodes are inserted into the two sides, close to the lower end, of the pressure-resistant shell, and windows are arranged on the other two adjacent sides of the pressure-resistant shell. A pressure sensor and a temperature sensor are inserted in the pressure-resistant shell close to the middle position; a combustion chamber is arranged in the pressure-resistant shell, a cooling cavity is formed between the pressure-resistant shell and the combustion chamber, a water inlet is formed in the lower end of the cooling cavity, a water outlet is formed in the upper end of the cooling cavity, and a pressure relief exhaust valve is arranged at the top of the pressure-resistant shell. According to the high-pressure atmosphere pulverized coal combustion device, after pulverized coal is combusted in the high-pressure atmosphere, the shell which is rapidly heated can be rapidly cooled, thermal stress and structural stress in the combustion chamber and the pressure-resistant shell can be rapidly adjusted, and the risk that the combustion chamber and the pressure-resistant shell are subjected to stress corrosion cracking can be reduced.

The present disclosure provides a method for producing an article having a metal member, said method comprising: a metal member preparation step in which a surface-treated metal member is prepared; a transfer sheet preparation step in which a transfer sheet that has a release film and a transfer layer provided to one surface of the release film is prepared, the transfer layer having a first protective layer and an adhesive layer in this order from the release film–side in the thickness direction; an attachment step in which a laminate is obtained by positioning the adhesive layer–side surface of the transfer sheet to face a transfer target surface of the metal member and attaching the two surfaces without gaps therebetween in a reduced-pressure atmosphere; and a heating step in which the transfer sheet and the metal member are adhered by heating the laminate, wherein, in the transfer sheet, the adhesive layer has a thickness of 1.5 μm or more, the release film has a thermal shrinkage of 3.4% or less, and the release film has a loop stiffness of 35.0 mN / 15 mm or less.

The invention provides a low-cost liquid level detection method which specifically comprises the following steps: step 1, in an initial state, when a machine barrel is empty, the air pressure in the barrel is consistent with the atmospheric pressure, and a pressure sensor does not output obvious signals; 2, water injection and air pressure change; step 3, signal transmission and conversion; and 4, water level judgment: the main control board presets air pressure threshold values corresponding to different water levels, and when the received electric signals reach the corresponding threshold values, the water level is judged to reach the standard, and water injection is controlled to be stopped. According to the invention, the drying assembly is shielded and sealed through the arc-shaped cover, thereby effectively preventing gas in the gas chamber barrel from being discharged from the gas inlet pipe, a pressure medium from entering through the gas inlet hole, pressure communicating the gas inlet hole to the back surface of the pressure chip, and reference pressure atmosphere reaching the front surface of the pressure chip through the plastic package shell, thereby sensing and measuring the pressure difference. The silicon-based gel can effectively protect the application of the chip and the binding wire in the high-humidity environment of the washing machine.

This invention provides a method for manufacturing laminated films that improves the adhesion between the base film and the inorganic layer, enabling the stable production of laminated films. [Solution] The method for manufacturing a laminated film according to the present disclosure includes a preparation step S1 of preparing a long base film 10 having a first surface 10a and a second surface 10b opposite to the first surface 10a; a plasma treatment step S2 of plasma treatment of the first surface 10a of the base film 10 in a reduced-pressure atmosphere in a chamber; and a film formation step S3 of forming an inorganic layer 20 on the first surface 10a in a reduced-pressure atmosphere following the plasma treatment step S2. In the plasma treatment step S2, the plasma treatment is performed by inductively coupled plasma of a rare gas and an oxygen-containing gas generated by applying high-frequency power to a low-inductance antenna.

A plurality of chips obtained by dicing a wafer and an adhesive sheet adhered to the back surfaces of the plurality of chips are accommodated in a container, suction processing is performed on the container to make the interior of the container become a low-pressure atmosphere, and ultraviolet rays are irradiated from the back surfaces of the plurality of chips and the adhesive sheet in the container in which the low-pressure atmosphere is maintained. The adhesive sheet is brought into contact with the concavo-convex surface in a container in which a low-pressure atmosphere is maintained, a gas is introduced into the front-surface-side space of the plurality of chips and the adhesive sheet while the back-surface-side space of the plurality of chips and the adhesive sheet is maintained in a low-pressure atmosphere, and the pressure difference between the back-surface-side space and the front-surface-side space is used to form a pressure difference between the back-surface-side space and the front-surface-side space. The pressure-sensitive adhesive sheet is pressed against the uneven surface and bent, thereby peeling the pressure-sensitive adhesive sheet from the plurality of chip portions.

This method for producing a laminated film comprises: a plasma treatment step (S2) in which a first surface (10a) of a base film (10) is subjected to plasma treatment in a reduced-pressure atmosphere in a chamber; and a film formation step (S3) in which, after the plasma treatment step (S2), an inorganic material layer (20) is formed on the first surface (10a) in a reduced-pressure atmosphere. The plasma processing is performed using inductively coupled plasma of an oxygen-containing gas generated by applying high-frequency power to the low-inductance antenna. In the plasma treatment step (S2), the ratio of the intensity (I1) of the maximum emission peak in the wavelength range of 555-565 nm to the intensity (I2) of the emission peak at the wavelength of 777 nm in the plasma emission is 0.12 or less.

A first transfer device and a second transfer device are configured to transfer a first substrate and a second substrate in a normal pressure atmosphere. A third transfer device is configured to transfer the first substrate and the second substrate in a decompressed atmosphere. A load lock chamber has accommodation sections allowed to accommodate therein the first substrate and the second substrate, and is allowed to switch an inside of the accommodation sections between the normal pressure atmosphere and the decompressed atmosphere. Multiple gates are respectively disposed on three different sides of the load lock chamber, and allowed to open or close the load lock chamber. The first transfer device, the second transfer device, and the third transfer device carry the first substrate and the second substrate into / out of the load lock chamber through different gates among the multiple gates.

The invention relates to the technical field of semiconductor material preparation, in particular to a preparation method of a p-type beta-Ga2O3 single crystal thin film, which utilizes pulsed laser deposition to prepare a gallium oxide thin film in a high oxygen pressure atmosphere, realizes great reduction of oxygen vacancy defect concentration in gallium oxide, reduces n-type carrier concentration increase caused by oxygen vacancy, and improves the yield of the gallium oxide thin film. The method has the advantages that the gallium oxide is doped with the nitrogen element, so that the p-type doping is difficult, the nitrogen element is guided to replace oxygen ions in gallium oxide crystal lattices under the action of the annealing atmosphere, the p-type conductive characteristic is formed, the hole concentration of the gallium oxide thin film is improved, and finally the high-quality beta-Ga2O3 thin film which is controllable in size and thickness and has p-type conductivity is obtained. By controlling the annealing time, the hole mobility of the thin film can reach up to 18 cm / V.s, and the hole concentration can reach up to 5.0 * 10 < 16 > / cm. The method is simple in process, low in manufacturing cost and suitable for industrial large-scale production, and important technical support is provided for research and development of high-performance power devices and deep ultraviolet detectors.

This invention provides a method for preparing infinite-layer nickel-based superconducting thin films using metal-organic chemical vapor deposition (MOCVD). The main concept involves dissolving a soluble metal cation precursor in a solvent at a stoichiometric ratio, forming a thin film precursor on a single-crystal perovskite oxide substrate via MOCVD; subsequently, annealing under a high-oxygen-pressure atmosphere yields a thermodynamically metastable perovskite intermediate; finally, reduction conditions are used to transform it into an infinite-layer nickel-based superconducting thin film. The advantages of this method include low cost, suitability for large-scale, large-area preparation of superconducting thin films, flexible control of film composition, and high reproducibility. The superconducting thin films prepared using this method exhibit zero resistance below 20 K and at ambient pressure, promising to promote the large-scale application of nickel-based superconducting materials in superconducting wires and tapes and in electronics, including high-field magnet coils, high-frequency low-loss cables, superconducting computers, superconducting antennas, and superconducting microwave devices.

This invention discloses a method for preparing a diamond high-temperature antioxidant silicon-based coating, belonging to the field of coating preparation technology, including the following steps: diamond powder is activated and then immersed in a dispersion, a composite sol, and a protective sol, and then treated in a muffle furnace and a high-pressure atmosphere furnace to obtain a diamond high-temperature antioxidant silicon-based coating; in this invention, the composite sol immersion relies on the three-dimensional interpenetrating network structure constructed by multi-walled carbon nanotubes to exert the toughening effect of bridging, pull-out, and crack deflection. At the same time, the nano-rivet effect of silicon carbide nanocrystals pins the microcracks inside the coating, significantly improving the fracture toughness and impact resistance of the coating. In addition, it forms a strong chemical bond with the inner silicon carbide transition layer and the outer yttrium oxide-silicon nitride protective layer, strengthening the overall interface integrity of the gradient coating, while assisting the outer layer to block oxygen penetration, reducing the volatilization loss of coating components at high temperatures, and comprehensively ensuring the high-temperature antioxidant and structural stability performance of the coating.

Provided are a heterojunction solar cell film deposition apparatus, method and system, a solar cell, a module, and a power generation system. The heterojunction solar cell film deposition apparatus is configured for amorphous silicon-based film deposition, and comprises a loading cavity, a preheating cavity, intrinsic process cavities, doping process cavities and an unloading cavity that are linearly arranged in sequence, the cavities being isolated from each other by means of an isolating valve. At least two intrinsic process cavities are provided and are configured for deposition by means of an intrinsic layer silicon film process; and at least one doping process cavity is provided and is configured for deposition by means of an N-type silicon film or P-type silicon film process. The preheating cavity comprises a heating preheating chamber and a preheating buffer chamber that is configured for adjusting the gas and pressure atmosphere.

The invention provides a degassing device. And the degassing device is used for removing air dissolved in the liquid in a reduced pressure atmosphere. The degassing device is provided with a liquid storage tank, a decompression device, a circulation flow path and a circulation device. The liquid storage tank is used for storing liquid. And the pressure reducing device is used for reducing the pressure in the liquid storage tank. And the circulating flow path enables different positions of the liquid storage tank to be communicated. And the circulating device is used for enabling liquid to circulate through the circulating flow path. The circulation flow path has an outflow port from the liquid storage tank to the circulation flow path and an inflow port from the circulation flow path to a position below a liquid level in the liquid storage tank. The diameter of the inflow port is smaller than that of the outflow port. Accordingly, degassing efficiency can be improved through a simple structure.