265 results about "Pressure Atmosphere" patented technology

A method of forming a silicon nitride film comprises: forming a silicon nitride film by applying first gas containing silicon and nitrogen and second gas containing nitrogen and hydrogen to catalyst heated in a reduced pressure atmosphere. A method of manufacturing a semiconductor device comprising the steps of: forming a silicon nitride film by the method as claimed in claim 1 on a substrate having the semiconductor layer, a gate insulation film selectively provided on a principal surface of the semiconductor layer, and a gate electrode provided on the gate insulation film; and removing the silicon nitride film on the semiconductor layer and the gate electrode and leaving a sidewall comprising the silicon nitride film on a side surface of the gate insulation film and the gate electrode by etching the silicon nitride film in a direction generally normal to the principal surface of the semiconductor layer. A method of manufacturing a semiconductor device comprising the steps of: forming a silicon nitride film by the method as claimed in claim 1 on a substrate including a semiconductor layer; forming an interlayer insulation layer on the silicon nitride film; forming a layer having an opening on the interlayer insulation layer; and etching the interlayer insulation layer via the opening in a condition where an etching rate for the silicon nitride film is greater than an etching rate for the interlayer insulation layer.

An extrusion-molding machine according to the present invention comprises: a screw having a blade portion for extruding a molding material, the screw disposed in a tightly-closed space; and a die for molding an extruded molding material, wherein the space is maintained in a reduced-pressure atmosphere, and a high-hardness coat layer is formed at least on the blade portion.

An electronic device includes a substrate, a cover body which is placed on the substrate, a first cavity which is surrounded by the substrate and the cover body, and a second cavity which is surrounded by the substrate and the cover body, wherein an inner portion of the first cavity is sealed in a first air pressure atmosphere, and an inner portion of the second cavity is sealed in a second air pressure atmosphere which has a difference of air pressure with respect to the first air pressure atmosphere, a first through-hole, which communicates with the first cavity and is blocked by a seal member, is provided in at least one of the substrate and the cover body, and the first cavity and the second cavity are isolated from each other by a partition wall portion which is integrally provided to the cover body or the substrate.

In one embodiment, a first substrate having first solder bumps and a second substrate having second solder bumps are stacked while temporarily tacking the solder bumps to each other, and then a stack is disposed inside a furnace. The gas in the furnace is exhausted to be in a reduced pressure atmosphere, and then a carboxylic acid gas is introduced into the furnace. While increasing a temperature inside the furnace where the carboxylic acid gas is introduced, the gas in the furnace is exhausted to be in a reduced pressure atmosphere at a temperature in a range from a reduction temperature of oxide films by the carboxylic acid gas to lower than a melting temperature of the solder bumps. By increasing the temperature inside the furnace up to a temperature in a range of the melting temperature of the solder bumps and higher, the first solder bumps and the second solder bumps are melted and joined.

A wafer processing cluster tool and method of operation provides one or more gas cluster ion beam processing chambers in possible combination with a deposition chamber and / or a cleaning chamber for performing sequential processing steps including, GCIB processing in a reduced pressure atmosphere.

A light-emitting element, a bonding layer, and a frame-like partition are formed over a substrate. The partition is provided to surround the bonding layer and the light-emitting element, with a gap left between the partition and the bonding layer. A pair of substrates overlap with each other under a reduced-pressure atmosphere and then exposed to an air atmosphere or a pressurized atmosphere, whereby the reduced-pressure state of a space surrounded by the pair of substrates and the partition is maintained and atmospheric pressure is applied to the pair of substrates. Alternatively, a light-emitting element and a bonding layer are formed over a substrate. A pair of substrates overlap with each other, and then, pressure is applied to the bonding layer with the use of a member having a projection before or at the same time as curing of the bonding layer.

A plasma torch head has transfer components, including an HF lead and a power lead / gas conduit, which are partially encased in a core fabricated from an elastomer. The core is housed in a rigid shell, which preferably also engages a portion of the transfer components. The shell can be a two-piece shell which is assembled around the core, or can be a single piece cast around the core. The core can be fabricated by securing the transfer components in a mold and filling the mold with an elastomer such as liquid silicone rubber. After curing the elastomer in the mold, the core is stripped from the mold and the shell is formed around the core. In one preferred method, sections of a two-part shell are injection molded from phenolic, placed about the core, and secured together with bolts. In another preferred method, the core is placed in a mold and the mold is filled with a liquid two-part epoxy which is cured in a reduced pressure atmosphere to form a one-piece shell.

A method of manufacturing a display device in which a transparent substrate is bonded to a display panel by an adhesive, includes: applying the adhesive to the display panel or the transparent substrate in a predetermined pattern; bonding the display panel and the transparent substrate together by means of the adhesive after the applying step; and curing the adhesive after the bonding step, wherein in the applying step, a viscosity of the adhesive being more than 5000 mPa·s and 15000 mPa·s or less, the application of the adhesive is carried out by a screen printing, a time from a finishing point of the application of the adhesive in the applying step until a starting point of the bonding in the bonding step is 10 seconds or more and 120 seconds or less, in the bonding step, in a condition in which the adhesive applied in the applying step is spreading, with air bubbles remaining, and a maximum size of the air bubbles is 0.5 mm or less, the display panel and the transparent substrate are bonded together by the adhesive under a reduced pressure atmosphere lower than the atmospheric pressure, and in the curing step, after the maximum size of the air bubbles have reached 0.1 mm or less, ultraviolet light is applied, curing the adhesive.

In a method of manufacturing a display having a display panel, a transparent protective plate, which is placed in front of the display panel, and a layer formed of a transparent organic medium, which is placed between the display panel and the protective plate, a liquid organic medium is applied to, or a sheet-like organic medium is formed on, a surface of one of the display panel and the protective plate, the display panel and the protective plate are bonded together in a reduced pressure atmosphere, and thereafter the liquid organic medium is cured.

To prevent bubbles from remaining when a transparent substrate is bonded via an adhesive with a display panel. A manufacturing method of a display device in which a transparent substrate is bonded with a display panel via an adhesive, including a coating step of coating the adhesive onto the display panel or the transparent substrate in a predetermined pattern, a bonding step of bonding the display panel and the transparent substrate via the adhesive after the coating step, and a curing step of curing the adhesive after the bonding step, characterized in that the adhesive has a viscosity of 2000 to 5000 mPa·s at the coating step, the display panel and the transparent substrate are bonded via the adhesive in a reduced pressure atmosphere lower than the atmospheric pressure in a state where the adhesive coated at the coating step is spread and the size of bubble is 1 mm or less at maximum at the bonding step, and the adhesive is cured by applying ultraviolet ray at the curing step.

A substrate treatment apparatus that treats a substrate under treatment has an interface section, a substrate loading / unloading section, a reduced pressure atmosphere conveyance chamber, and an exposure treatment chamber. The interface section has a conveyance mechanism that can freely load and unload the substrate under treatment from another device into the apparatus or vice versa. The substrate under treatment can be loaded and unloaded into and from the substrate loading / unloading section in one direction by the conveyance mechanism of the interface section. The reduced pressure atmosphere conveyance chamber is disposed adjacent to and perpendicular to the direction of the substrate loading / unloading section and has a conveyance mechanism that conveys the substrate under treatment under a reduced pressure atmosphere. The exposure treatment chamber is disposed adjacent to and in parallel with the direction of the reduced pressure atmosphere conveyance chamber and performs an exposure treatment for the substrate under treatment.

A plasma processing apparatus includes a temperature measuring unit; airtightly sealed temperature measuring windows provided in a mounting table, for optically communicating to transmit a measurement beam through a top surface and a bottom surface of the mounting table; and one or more connection members for connecting the mounting table and a base plate, which is provided in a space between the mounting table and the base plate. In the plasma processing apparatus, a space above the mounting table is set to be maintained under a vacuum atmosphere, and a space between the mounting table and the base plate is set to be maintained under a normal pressure atmosphere, and each collimator is fixed to the base plate at a position corresponding to each temperature measuring window, thereby measuring a temperature of the substrate via the temperature measuring windows by the temperature measuring unit.

A method of manufacturing a three dimensional image display device includes: applying an adhesive member to any one of a lens plate and a display panel so as to form a continuous frame having an application height higher than a separation distance between the lens plate and the display panel in a bonding complete state; measuring the application height of the adhesive member; figuring out a volume of an enclosed space, which is formed by the display panel, the adhesive member and the lens plate, by using a lowest application height of the adhesive member, and figuring out a bonding pressure leading to obtaining of a necessary internal pressure in the enclosed space, by using the figured-out volume of the enclosed space; and bonding the lens plate and the display panel together with the adhesive member in a reduced pressure atmosphere with the figured-out bonding pressure.

A displacement control mechanism used in a variable displacement compressor for controlling a displacement of the compressor includes a first control valve located on a supply passage and a second control valve located on a first bleed passage. The second control valve includes a backpressure chamber having substantially the same pressure atmosphere as a region of the supply passage downstream of the first control valve and a spool including a back surface that is located in the backpressure chamber. The spool reduces an opening degree of the first bleed passage when a pressure in the backpressure chamber is increased. The spool blocks a communication between the backpressure chamber and the first bleed passage via a clearance formed around a cylindrical outer peripheral surface of the spool in the second control valve when the spool sets the first bleed passage at a minimum opening degree.

The invention relates to a photoelectric material technique, in particular to a method for controlling the grain size to produce ITO target. ITO powder is passivated under different temperatures in advance, so that the grain size of the ITO powder can be preliminarily increased and activity is reduced, the materials passivated under different temperatures are then mixed according to different proportions and ball-milled, and finally, after processes such as spray granulation, pressing and normal-pressure atmosphere sintering, the fine-grain ITO target with the grain size of 4Mu m to 10Mu m is prepared. The invention can prepare small-grain size and uniformly distributed ITO target by way of normal-pressure atmosphere sintering, the sintering temperature is decreased, and the sintering efficiency is increased; the technique is simple, the production cost is low, continuous and mass production can be easily carried out, and large-specification, high-quality ITO target can be sintered.

It is an object to provide a method for manufacturing a liquid crystal display device including a liquid crystal layer which exhibits a stable blue phase. The following steps are performed: a first step of forming a thermosetting first sealant so as to form a frame over a first substrate; a second step of forming a photocurable and thermosetting second sealant on an outer side than the first sealant over the first substrate; a third step of dropping a liquid crystal material which exhibits a blue phase at a given temperature on an inner side than the first sealant; a fourth step of attaching a second substrate to the first substrate in a reduced-pressure atmosphere; a fifth step of performing polymer stabilization treatment on the liquid crystal material; and a sixth step of curing the first sealant through heat treatment.

The present invention provides a method of carbonatation treatment for steel slag, and comprises the steps: in a boiling-bed reactor, under the temperature of 350 to 800 DEG C and the pressure atmosphere 0.1 to 3.6 and under the condition of 5 to 25 percent of the vapor, the steel slag with the particle diameter being less than or equal to 15 mm reacts with the carbon dioxide for two to twelve hours. The present invention adopts the one-step carbonization in the boiling bed to substitute the conventional reactions with a hydration step and then a carbonization step, thus greatly shortening the carbonization time of the steel slag; the industrial waste gas and the stack gas (the valid compositions are carbon dioxide, and containing certain vapor when the temperature of the gas is more than 100 degrees centigrade) are used as the gas source, which reduces the exhaustion of the greenhouse gas carbon dioxide and adequately uses the surplus heat, while completing the carbonization of the steel slag; moreover, the operation is flexible and convenient, and the carbonization degree of the steel slag can be controlled according to the requirements of different application areas of the steel slag.

An angular rate sensor and an acceleration sensor are sealed at the same sealing pressure. The sealing pressure at this time is put into a reduced pressure state below the atmospheric pressure in view of improving a detection sensitivity of the angular rate sensor. Even in the reduced pressure atmosphere, to improve the detection sensitivity of the acceleration sensor, a shift suppressing portion (damper) for suppressing shifts of a movable body of the acceleration sensor is provided. This shift suppressing portion includes a plurality of protruding portions integrally formed with the movable body and a plurality of protruding portions integrally formed with a peripheral portion, and the protruding portions are alternately disposed separately at equal intervals.

A system and method for providing fast and effective drying for inundated wireless telecommunications handsets by a combination of technologies that induce a negative pressure atmosphere together with controlled thermal energy at levels that is significant yet relatively harmless to handset components and memory. The combination is such that the embodiments generally restore full handset functionality (to the extent recoverable) within thirty minutes from activation of the particular station for treatment of an inundated handset. Related business methods of the embodiments include the derivation of revenue through licensing and marketing agreements with service center owners or the operators of other retail establishments such as courier mail centers.

A method of producing a substantially open-cell, expanded polystyrene sheet, comprising the steps of:forming a mixture comprising from 30 to 95% of polystyrene incorporating an aliphatic hydrocarbon with 4-6 carbon atoms, from 0 to 65% of polystyrene, and from 0.2 to 10% of a nucleating agent,mixing the mixture obtained and melting it by heating inside an extruder,bringing the mixture to a temperature of 130-150° C. in the final portion of the extruder,extruding the mixture in a lower-pressure atmosphere to produce an expanded sheet, which has a low density and a high capacity to absorb aqueous liquids, particularly if a surfactant is added to the starting mixture, and which, when coupled with two films of plastics material gives rise to a laminate suitable for the production, by thermoforming, of trays of foods which may release aqueous liquids.

A substrate processing apparatus includes a container in which a heating plate, a discharge nozzle for discharging a vapor of organic solvent, and a discharge nozzle for supplying a process gas and a cooling gas are provided. A pump in communication with an exhaust outlet of the container exhausts an atmosphere from the container to reduce pressure in the container. Therefore, the substrate processing apparatus is capable of performing (1) the process of drying a substrate in a reduced-pressure atmosphere by the use of the vapor of organic solvent, and (2) the process of drying the substrate in the reduced-pressure atmosphere by heating, to thereby efficiently dry the substrate.

A bonding method includes a first process that includes plasmatizing a first gas including a raw gas containing a siloxane (Si—O) bond at a reduced-pressure atmosphere, substituting the first gas by a second gas mainly including an inert gas, and plasmatizing the second gas to form a first plasma polymerized film on at least a part of a base member so as to obtain a first bonded object including the base member and the plasma polymerized film and a second process that includes preparing a second bonded object that is to be bonded to the first bonded object and pressing the first and the second bonded objects against each other such that a surface of the first plasma polymerized film is closely contacted to a surface of the second bonded object to bond the objects together.

A helical-blade fluid machine maintains a low-pressure atmosphere in a closed casing (1) and secures a proper lubrication state for a compression mechanism (9). The fluid machine has a drive mechanism (7) that is installed at an upper or lower part of the casing and consists of a stator (11) and a rotor (15). The compression mechanism is installed at the other part of the casing. The compression mechanism has a cylinder (23) and a roller (25), which is swayed with respect to the cylinder by the drive mechanism. A helical blade (39) having unequal pitches is arranged on the roller, to define compression chambers (41). This arrangement lowers the head of lubricant. An intake pipe (5) feeds gas into the casing so that a low-pressure atmosphere fills the casing.

The invention relates to a method for processing instant tea extract, which belongs to the technical field of tea processing. The method for processing the instant tea extract comprises the following steps: leaching a finished product tea for 1 to 3 times every 3 to 5 minutes, after the tea is immersed by 2 to 5 times volume of purified water; crushing the leached fresh tea into powder of between60 and 80 meshes; immersing the tea by the purified water or condensed water obtained in a concentration step at a temperature of between room temperature and 80 DEG C for 5 to 15 minutes, with waterdosage of between 10 and 25 times of weight of the tea; roughly filtering tea water immersing the finished product tea by a 60 to 80 mesh sieve, and finely filtering the tea water by a 80 to 120 micron filtration fabric; roughly filtering tea water immersing the fresh tea powder by a 100 to 150 mesh sieve, and finely filtering the tea water; reversely concentrating tea liquor to 15 to 30 percent volume of original tea water; and decompressing, vaporizing and concentrating the tea liquor at low temperature to produce liquid tea extract with water content of between 30 and 60 percent; or directly decompressing, vaporizing and concentrating the tea liquor under pressure of less than or equal to 0.07 pressure atmosphere at a temperature of between room temperature and 50 DEG C to produce the liquid tea extract; and drying the liquid tea extract to obtain solid instant tea extract. The method has the advantages of low production cost and rich tea extract flavor.

There is provided a method for producing a semiconductor device, capable of suppressing generation of voids at an interface between a semiconductor element and an under-fill sheet to produce a semiconductor device with high reliability. The method includes providing a sealing sheet having a support and an under-fill material laminated on the support; thermally pressure-bonding a circuit surface of a semiconductor wafer, on which a connection member is formed, and the under-fill material of the sealing sheet under conditions of a reduced-pressure atmosphere of 10000 Pa or less, a bonding pressure of 0.2 MPa or more and a heat pressure-bonding temperature of 40° C. or higher; dicing the semiconductor wafer to form a semiconductor element with the under-fill material; and electrically connecting the semiconductor element and the adherend through the connection member while filling a space between the adherend and the semiconductor element using the under-fill material.

A raw material gas supply system (6) supplies a raw material gas to a gas use system (2) kept in a reduced pressure atmosphere. The system includes: a raw material tank (40) for storing a liquid raw material or a solid raw material; a raw material conduit (46) connected at one end to the raw material tank and connected at the other end to the gas use system; a carrier gas supply mechanism (54), connected to the raw material tank, for supplying a carrier gas into the raw material tank while controlling the flow rate of the gas; on-off valves (48, 50) interposed in the raw material conduit; a heater (64) for heating the raw material conduit and the on-off valves; and a temperature control device (92) for controlling the heater, wherein the raw material conduit and the on-off valves are each formed of a metal material having good thermal conductivity.

A light-emitting element, a bonding layer, and a frame-like partition are formed over a substrate. The partition is provided to surround the bonding layer and the light-emitting element, with a gap left between the partition and the bonding layer. A pair of substrates overlap with each other under a reduced-pressure atmosphere and then exposed to an air atmosphere or a pressurized atmosphere, whereby the reduced-pressure state of a space surrounded by the pair of substrates and the partition is maintained and atmospheric pressure is applied to the pair of substrates. Alternatively, a light-emitting element and a bonding layer are formed over a substrate. A pair of substrates overlap with each other, and then, pressure is applied to the bonding layer with the use of a member having a projection before or at the same time as curing of the bonding layer.

A reduced-pressure heat treatment jig is used for supporting a workpiece of iron when the workpiece is subjected to heat treatment in a reduced-pressure atmosphere in which pressure is reduced compared to atmospheric pressure. The jig is formed of an iron material and is formed with a film on at least a contact surface with the workpiece, the film being formed of a material which persists during the heat treatment. The film preferably includes a metal oxide having an evaporating temperature higher than the heat treatment temperature in the reduced-pressure atmosphere. The film preferably contains aluminum oxide.

A silicon oxide film is formed, having a specific film thickness on a substrate by alternately repeating: forming a silicon-containing layer on the substrate by supplying a source gas containing silicon, to the substrate housed in a processing chamber and heated to a first temperature; and oxidizing and changing the silicon-containing layer formed on the substrate, to a silicon oxide layer by supplying reactive species containing oxygen to the substrate heated to the first temperature in the processing chamber under a pressure atmosphere of less than atmospheric pressure, the reactive species being generated by causing a reaction between an oxygen-containing gas and a hydrogen-containing gas in a pre-reaction chamber under a pressure atmosphere of less than atmospheric pressure and heated to a second temperature equal to the first temperature or higher than the first temperature.