Method for controlling grain size to produce ITO target

Abstract

The invention relates to a photoelectric material technique, in particular to a method for controlling the grain size to produce ITO target. ITO powder is passivated under different temperatures in advance, so that the grain size of the ITO powder can be preliminarily increased and activity is reduced, the materials passivated under different temperatures are then mixed according to different proportions and ball-milled, and finally, after processes such as spray granulation, pressing and normal-pressure atmosphere sintering, the fine-grain ITO target with the grain size of 4Mu m to 10Mu m is prepared. The invention can prepare small-grain size and uniformly distributed ITO target by way of normal-pressure atmosphere sintering, the sintering temperature is decreased, and the sintering efficiency is increased; the technique is simple, the production cost is low, continuous and mass production can be easily carried out, and large-specification, high-quality ITO target can be sintered.

Description

technical field [0001] The invention relates to a photoelectric material technology, in particular to a method for manufacturing an ITO target material by controlling the grain size. Background technique [0002] Transparent conductive oxide film referred to as TCO, mainly refers to metal oxides such as indium, tin, antimony, zinc and cadmium and their composite multi-element oxide film materials, such film materials have wide band gap, high visible light transmittance, infrared ray High reflectivity and excellent electrical conductivity and other photoelectric properties, so it is widely used in various optoelectronic fields including: 1. Display industry, such as LCD liquid crystal display, PDP plasma display, inorganic EL and organic EL display; 2. Solar cells Transparent conductive electrodes; 3. Special functional glass such as infrared reflective glass, anti-ultraviolet glass, photomask and glass magnetic disk, etc. Tin-doped indium oxide, or Indium-Tin-Oxide, is refe...

AI Technical Summary

Problems solved by technology

Although HP and HIP methods can produce high-purity, high-density ITO targets with a grain size of about 3 μm, the manufacturing process is complicated, the investment in equipment is large, and the manufacturing cost is much higher than the cost of materials. Large-scale ITO targets cannot be realized. The preparation and continuous production of materials; Atmospheric pressure atmosphere sintering is not only suitable for the preparation of large-scale targets, but also can achieve continuous production with small investment. powder in order to reduce the sintering temperature, and when using nano powder directly, due to the large specific surface area of ​​the powder material, more gas is adsorbed, even at a temperature of 1450 ° C, the grains can grow very large, and at the same time due to the speed of grain growth Soon, the adsorbed gas cannot be removed in time, resulting in the formation of many large closed pores in the structure, and it is impossible to obtain a high-density target. In order to increase the density, the sintering temperature must be appropriately increased, up to 1600-1700 °C. At a higher temperature, the grains will grow larger, possibly reaching 30-50 μm, which will seriously affect the quality of the target and coating