129 results about "Plasma" patented technology

The invention relates to a multi-stage magnetic field straight pipe magnetic filtration and pulsed bias compounded electrical arc ion plating method, and belongs to the technical field of material surface treatments. In the prior art, plasma transmission efficiency is low and pulsed bias can not completely remove large particles due to applying of magnetic filtration on an arc source. A purpose of the present invention is to solve problems in the prior art. The method comprises: 1, connecting a workpiece to a pulsed bias power supply, connecting an electrical arc ion plating target source to a target power supply, and connecting a multi-stage magnetic field straight pipe magnetic filtration device in front of the target source; 2, carrying out thin film deposition, wherein work gas is introduced until achieving 0.01-10 Pa when a pressure in a vacuum chamber is less than 10<-2> Pa, the pulsed bias power supply is opened, a pulsed bias amplitude value, frequency and a duty ratio are adjusted, the target power supply is opened, plasma is generated, the multi-stage magnetic field straight pipe magnetic filtration device is opened, removal of large particles and efficient transmission of the plasma in the magnetic filtration device are achieved, process parameters are adjusted, and a thin film with no large particle defect is rapidly produced; and 3, adopting a single-stage magnetic field to combine direct current/pulsed bias to obtain a thin film with a certain thickness.

The invention relates to a method and apparatus for a laser to induce plasmas to inject into a substrate and is directed to the fields of plasma injection apparatus and plasma injection material processing technology. A high energy burst pulse strong laser initiated by a laser impacts on tinsel which absorbs the high energy burst pulse laser energy. The high energy burst pulse laser energy is instantly gasified and ionized, thereby producing hot plasmas. The hot plasmas are composed of metal ions, electrons and uncharged atoms. The plasmas absorb subsequent laser energy to expand and blast. During the blast process of the plasmas, an expulsive force between the electrons and a workpiece connected to the negative potential drives the electrons to move against the workpiece. A positive charge plate neutralizes a part of the electrons. Suction between positive valency metal ions and the negative potential workpiece drives the metal ions to move towards the workpiece. Under the superposedeffects of a shock wave effect formed in the expansion and blast of the plasmas and an attraction effect of an electric field, the metal ions hit on the workpiece at a great speed; hence the injection of the metal ions is completed.

Disclosed herein is a direct ion beam deposition method through ion beam sputtering. The method comprises the steps of: a) providing a workpiece on which a certain material is to be deposited with a certain desired thickness; b) providing a deposit material having a certain area from which the deposit material is discharged into a certain working gas atmosphere; c) transforming the working gas atmosphere into a plasma atmosphere by bombarding electrons widely to the working gas atmosphere; d) emitting a surface material by means of a sputter from the deposit material exposed in the plasma atmosphere; e) exposing the emitted deposit material to an ionization environment; f) and providing energy to the deposit material by applying an electric potential to the step e) to thereby be radiated on a corresponding face of the workpiece. A direct ion beam deposition system is also disclosed.

Methods and systems are described for generating high-energy particles, or quantum energy, from a quantum macro object. Specifically, the method of generating high-energy photons, or quantum energy, comprises in general: (a) isolating a gaseous substance within a bounded area, wherein the gaseous substance and the bounded area contain a plurality of composition particles; (b) energizing the gaseous substance, and particularly the particles within the gaseous substance and the bounded area, thus causing the gaseous substance to transition into a glow discharge plasma state, wherein the particles are separated into their component atomic nuclei and electron parts; (c) increasing the gas pressure within the bounded area to transition the glow discharge plasma to a quantum macro object, wherein the quantum macro object comprises a positively charged nucleus and an electron cloud surrounding the positively charged nucleus, the electron cloud comprising a plurality of quantum electrons and a plurality of free-floating electrons, the quantum electrons comprising large amounts of potential quantum energy; (d) energizing the quantum electrons by inducing an active impact upon the quantum macro object, wherein the quantum electrons are caused to orbit the nucleus of the quantum macro object such that the potential energy existing within the quantum electrons is converted and released in the form of quantum energy in a continuous and inexhaustible manner. The bounded area is typically created by a dielectric of various sorts, such as within a dielectric container or properly charged air.

This prevent disclosure provides a plasma enhanced atomic layer deposition apparatus and the controlling method thereof. The plasma enhanced atomic layer deposition apparatus includes: a plurality of reaction chambers, each of the reaction chambers having a first reaction space and a second reaction space; an adjustable partition unit controlled to separate or communicate the first and the second reaction spaces; and a plurality of heating carriers respectively disposed in the plurality of reaction chambers. The method manipulates the movement of the partition plate, leading to separation or communication between the first and second reaction spaces, so as to avoid the interference or inter-reaction between process gases and the resultant particles contaminating the substrates.

A method of nitriding a metal includes transforming a surface region of a generally nitrogen-free metal into a nitrogen-containing solid solution surface region. A first heating process heats the surface region at a first temperature in the presence of a nitrogen gas partial pressure to form a nitrogen-charged surface portion on the surface region. A second heating process heats the surface region and nitrogen-charged surface portion at a second temperature for a predetermined time to interstitially diffuse nitrogen from the nitrogen-charged surface portion a depth into the surface region. Coincident with the second heating process, an ionized inert or reducing gas removes the nitrogen-charged surface portion. The resulting nitrogen-containing solid solution surface region has a gradual transition in nitrogen concentration.

A method and apparatus is disclosed for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition (PVD). The method comprises the steps of providing a chamber comprising a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further comprisesgenerating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formedon the substrate.

The present invention relates to a plasma-generating source which generates uniform and high-density plasma at a high vacuum level, and to a use thereof. The object of the present invention is to obtain a high-quality thin film by using the plasma-generating source in a thin-film deposition system which comprises: a device for sputtering a similar plasma-generating source, a neutral particle-beam generating source, or a combination of the device for sputtering and the neutral particle-beam generating source. According to the present invention, a magnetic field formed by at least one pair of belt-type magnets, and microwaves generated by a microwave-radiation device, are used to generate plasma, and a continuous structure of the belt-type magnets is used to induce a return path for electrons so as to maximize a plasma-confinement effect, thereby achieving the above object.

The invention relates to a multielement hard coating and an electromagnetic enhancement magnetron sputtering preparation process thereof. An electromagnetic enhancement magnetron sputtering technologyis characterized by sleeving electromagnetic coils on a magnetron sputtering cathode, using multiple groups of cathode unbalanced magnetic fields for forming a closed magnetic field, forming a crossed electric and magnetic field through the closed magnetic field and a center anode, and improving the ionization rate of sputtered particles. The multielement hard coating comprises an underpainting transition layer, a function layer, and a covering layer. Through electromagnetic enhancement magnetron sputtering, a sputtering area can be increased, a sputtering channel is widened, the magnetic field intensity of the closed magnetic field can be further improved, and the ionization rate of the sputtered particles is favorably improved; and through the closed magnetic field, a free path of an electron is increased, the plasma intensity is improved, the cleaning efficiency and a cleaning effect are improved, and the ionization rate of the sputtered particles can be greatly improved, so that auxiliary deposition is realized, and a binding force of the coating is improved.

An arrangements and methods for cooling a plasma-based radiation source having a revolving element which is to be cooled, particularly for application in EUV radiation sources, is disclosed. The revolving element is immersed in the metal coolant in a first vessel of a primary cooling circuit, and a secondary cooling circuit with a cooling liquid evaporating at the desired operating temperature of the metal coolant has a control unit for controlling at least one atomizing arrangement in a differentiated manner and for selectively controlling a heater in case the determined temperature falls below a minimum operating temperature of the metal coolant. The at least one atomizing arrangement in a cooling section selectively sprays individual wall regions of the first vessel with the cooling liquid depending on the determined temperature of the metal coolant.

The invention is a method for synthesizing diamond membrane at low temperature by microwave plasma, comprising the steps of: charging Ar and H2 gases into a microwave plasma synthesizing cavity; at a microwave power of 600-750W and a gas pressure of 900-1100Pa, ionizing the gases into plasma; when the plasma is stable, charging CH4 gas into the plasma cavity and able to implement deposition of diamond membrane without intensifying external magnetic field. And the method has advantages of simple process, easy to implement, high deposition rate, etc.

The invention provides a plasma generating device and method, and the device comprises a reaction housing, two electrodes with opposite polarities, an air extractor, an air supply device, an air pressure detection device, and a control device. According to the plasma generating device provided by the invention, the air extractor strongly and rapidly extracts air in the reaction chamber at a firstrate; when the reaction chamber reaches a first set air pressure, gas for ionization is provided for the reaction chamber through the air supply device, and when the reaction chamber reaches a secondset air pressure, the high-voltage pulse power supply supplies power to the two electrodes so as to ionize the gas, so that plasma is generated in the reaction chamber; the air extractor continuouslyand slowly extracts the gas in the reaction chamber at a second rate, and the ionized gas slowly and dynamically flows in the reaction chamber in a balanced manner, so that low-pressure gas flow withrelatively stable density is generated in the reaction chamber, the fatigue of the ionized gas is prevented; and meanwhile, a relatively stable plasma ionization medium is provided.

The present invention relates to a method and apparatus for treating a discharge gas containing a target gas in a plasma state, the method comprising the steps of: generating a plasma in a conversion region in which the conversion of the target gas occurs; supplying, to the conversion region, a conversion promoting agent containing a conversion promoting element of which the first ionization energy is not greater than 10eV for promoting the conversion of the target gas; supplying, to the conversion region, a conversion agent that produces conversion products by combining with the dissociation products of the target gas and prevents the dissociation products from recombining into the target gas; and supplying the exhaust gas containing the target gas to the conversion region. The method increases the conversion rate of the target gas contained in the exhaust gas and reduces the energy consumption required in the process.

The invention relates to a cusp field plasma thruster capable of improving the thrust resolution ratio and the working medium utilization rate, and belongs to the field of cusp field plasma thruster design. The problems that during achieving non-traction application of an existing cusp field thruster, the thrust resolution ratio is insufficient, ionization is insufficient under the work conditionof the low power, and the working medium utilization rate is too low are solved. The cusp field plasma thruster is integrally of an axis symmetry structure and comprises a main anode, a first gasket,a hollow cover plate, a shell, a first-level permanent magnet, a second gasket, a second-level permanent magnet, a wall face anode and a ceramic channel. The movement behavior of electrons in the channel is regulated and controlled in real time by adjusting the electric potential of the annular wall face anode in the ceramic channel, accordingly, the ionization process is finely adjusted, performance parameters are output, and the purpose of improving the output thrust resolution ratio of the thruster is achieved; and meanwhile, electron radial migration can be promoted, the collision probability between the electrons and atoms nearby the wall face is increased, radial expansion of the ionization area is achieved, and the purpose of improving the working medium utilization rate of the thruster is achieved.

A process and apparatus for separating element isotopes in space by heating a stream of raw materials using concentrated sunlight and ionizing radiation, followed by electromagnetic separation, and collection of the desired isotopes in appropriate receptacles. The unique design of this invention allows flexibility of implementation, very high separation efficiency, and minimal waste. The intent of collecting a multiplicity of isotopes simultaneously is a key feature of this invention. The goal for this work is to greatly reduce the cost of producing purified finished materials in space. This capability makes economical the fabrication of complex and large structures for space-based industry and habitation. This invention builds upon the sciences of plasma physics, ion separation, and microgravity processing, and incorporates new concepts of the integral design and efficient process operation, taking advantage of the peculiar properties of a microgravity environment. The output stream of pure isotopes can be directed, focused, and shuttered to allow the creation of composite materials, superlattices, or three-dimensional structures of almost any atomic and spatial configuration.

The invention discloses a calculation method and system for particle energy level population in non-local thermodynamic equilibrium plasma, and the particle energy level population in the non-local thermodynamic equilibrium plasma is calculated by utilizing the following formula shown in the specification. Non-equilibrium bound state characteristic temperature capable of reflecting the degree of the plasma deviating from the local thermodynamic equilibrium state is introduced; derivation is performed to obtain an improved Saha equation; meanwhile, the non-equilibrium bound state characteristictemperature is applied to an existing Boltzmann distribution formula, and a modified Boltzmann distribution formula is obtained. The method is suitable for both local thermal dynamic balance plasma and non-local thermal dynamic balance plasma. For non-local thermodynamic equilibrium plasmas, due to the fact that an energy level population rate equation set does not need to be solved, rapid and efficient particle energy level population calculation can be achieved while certain precision is guaranteed.

Disclosed are systems and methods that facilitate non-pertubative measurements of low and null magnetic field in high temperature plasmas.

Plasma discharges and electromagnetic fields may be applied to a liquid, such as water, for desalinization purposes and to treat unwanted material in the liquid.