The invention relates to a preparation method of a
copper seed layer, and the preparation method comprises self-
ionization plasma sputtering, and when the
copper seed layer is deposited, the
argon flow is 1sccm to 10sccm, the
direct current sputtering power is 10kW to 20kW, the
radio frequency bias power is 150W to 250W, and the initial temperature is 20 DEG C to 30 DEG C. The preparation method provided by the invention is carried out under the condition of relatively low initial temperature, so that damage and stress accumulation of high temperature to
silicon dioxide are avoided; the method is carried out under the condition of high direct-current
sputtering power, sputtering particle energy can be balanced, and compact deposition of Cu atoms is promoted. Due to the arrangement of
radio frequency bias power, Ar atom bombardment can be enhanced, Cu atoms are migrated to low-energy
crystal lattice sites, and surface protrusions are reduced;
plasma can be stabilized by setting the
argon flow, and uniform deposition of the
copper seed layer is ensured. Therefore, according to the preparation method provided by the invention, the TSV
electroplating quality can be improved, and the SIP
interconnection reliability is improved.