1667results about "From condensed vapors" patented technology

Crystal growth systems with a baffle are provided. In one example, a crystal growth system for growing crystalline material, the crystalline material including silicon carbide, includes a seed holder configured to hold a silicon carbide seed crystal. The seed crystal provides a growth surface for growth of the silicon carbide crystalline material. The system includes a crucible at least partially defining a crystal growth chamber. The system includes a source material. The system includes one or more baffles within the crystal growth chamber and spaced apart from the source material. The one or more baffles include one or more apertures defined through the one or more baffles. The baffle includes a long dimension that is non-perpendicular to the growth surface of the seed crystal.

The invention belongs to the technical field of silicon carbide single crystal materials, and particularly relates to a growth device of large-size silicon carbide single crystals and a preparation method of the silicon carbide single crystals, porous graphite cylinders are arranged in a powder area of the growth device of the large-size silicon carbide single crystals, and the porous graphite cylinders are distributed along the edge of the powder area to the center in a stepped mode. The height is gradually increased from the edge to the center; a plurality of layers of stacked graphite pore plates are arranged at the top of the powder area, the upper end parts of the porous graphite cylinders are flush with the upper surfaces of the corresponding layers of graphite pore plates, and the porous graphite cylinders penetrate through the graphite pore plates, so that a continuous gas phase transmission channel from the powder area to the crystal growth area is formed. According to the invention, the plurality of porous graphite cylinders are arranged in the silicon carbide raw material area in a stepped manner, so that the temperature field distribution of the raw material area is stabilized, the gas phase layout is optimized, impurities in gas phase components are filtered, and the defects of microtubes, inclusions, dislocation and the like in crystals are improved.

A silicon carbide source material structure for use in a sublimation system for growing single crystal silicon carbide is provided. The silicon carbide source material structure may comprise a first layer and a second layer, the first layer being different from the second layer in at least one property.

The invention provides a vertical structure ultraviolet photoelectric detector and a preparation method thereof. The ultraviolet photoelectric detector is of a vertical structure, the design facilitates light absorption of the ultraviolet photoelectric detector, the light utilization rate of the ultraviolet photoelectric detector is improved, and compared with a horizontal structure, the transmission distance is shortened, and the cost is low; the ultraviolet photoelectric detector provided by the invention has a relatively high switching ratio of light and dark current and relatively small dark current, and also has a very high response speed under the condition of keeping the switching ratio of light and dark current and the dark current; a PN junction is formed between the nickel oxide hole transport layer and the beta-phase gallium oxide single crystal, so that the ultraviolet photoelectric detector has self-driving performance; in the manufacturing process, the substrate is used as a supporting frame, and the extraction electrode is packaged in one step through the conductive adhesive tape, so that 3-5 photoetching steps of a traditional horizontal structure are omitted, the process is simplified, and the process manufacturing is simpler.

The invention provides an anti-ferroelectric lanthanum ferrite, bismuth ferrite and strontium titanate superlattice film with high energy storage density as well as a preparation method and application thereof. The anti-ferroelectric lanthanum ferrite, bismuth ferrite and strontium titanate superlattice film with high energy storage density comprises a substrate layer, a bottom electrode layer and a plurality of stacked relaxation ferroelectric layers, wherein the bottom electrode layer and the multiple stacked relaxation ferroelectric layers are sequentially arranged on the substrate layer; each relaxor ferroelectric layer sequentially comprises a first functional layer, a second functional layer and a third functional layer from bottom to top; the first functional layer comprises LaFeO3, the second functional layer comprises BiFeO3, and the third functional layer comprises SrTiO3. The anti-ferroelectric lanthanum ferrite, bismuth ferrite and strontium titanate superlattice thin film with the high energy storage density has small electric leakage performance and high polarization value, and more excellent energy storage performance is achieved.

The invention relates to the technical field of silicon carbide single crystal growth, in particular to a high-purity semi-insulating silicon carbide single crystal for an optical element and a growth process thereof.The growth process includes the steps that S1, silicon carbide powder, a graphite crucible and the like are assembled to form a thermal field device, the thermal field device is placed in an induction furnace, room-temperature furnace washing treatment and low-temperature furnace washing treatment are sequentially carried out, and the silicon carbide powder is obtained; carrying out thermal field impurity removal treatment; s2, assembling the silicon carbide seed crystal and the impurity-removed thermal field device, raising the temperature in the induction furnace, conveying high-purity argon or mixed gas of high-purity argon and high-purity hydrogen into the induction furnace, and performing crystal growth; s3, after crystal growth is finished, high-temperature and high-pressure annealing treatment is carried out firstly, then furnace cooling treatment is carried out, and the high-purity semi-insulating silicon carbide crystal ingot for the optical element is obtained. The silicon carbide crystal ingot with excellent light transmission performance and high resistivity is obtained by selecting specific raw materials, reasonably designing an assembly mode and combining processes of thermal field impurity removal, high-temperature and high-pressure annealing and the like.

A silicon carbide source material structure for use in a sublimation system for growing crystalline silicon carbide is provided. The silicon carbide source material structure includes a composite shaped solid. The composite shaped solid may be made by casting, extrusion, 3D printing, graphite conversion, or other suitable process.

The invention discloses a method for bonding diamond and gallium nitride, which comprises the following steps of: preparing monocrystal diamond and a GaN epitaxial wafer, etching the GaN epitaxial wafer to form a layered stepped structure, bombarding GaN by using Ar ion beams to activate the surface of the GaN, depositing an intermediate layer on the surface, thinning the intermediate layer until the middle GaN part is exposed after the deposition is completed, polishing after the thinning is completed, and finally, carrying out the bonding of the diamond and the gallium nitride. The method comprises the following steps: respectively soaking GaN and monocrystal diamond in an acidic solution and an alkaline solution, enabling the GaN and the monocrystal diamond to be in contact with each other after soaking, applying pressure, performing high-temperature annealing for bonding, and then removing a substrate of a GaN epitaxial wafer to finally obtain the GaN / diamond. Through the layered stepped structural design, the bonding of diamond and GaN can be realized, the interface thermal resistance can be effectively reduced, the contact area is obviously increased, the heat dissipation of a GaN device can be more uniform and sufficient, and the problem of difference of thermal expansion coefficients is solved.

The invention discloses a super-large-scale silicon single crystal growth method based on a high-temperature superconducting magnetic control technology, and relates to the technical field of silicon single crystal growth, and the method comprises the following steps: setting and calibrating an initial magnetic field intensity, and combining a gradient graphite felt heat conductivity coefficient function to optimize temperature field uniformity; a dynamic magnetic field regulation and control mechanism is introduced in the melt stage, melt convection is inhibited through flow velocity-magnetic field joint control, and oxygen concentration monitoring is synchronized; a multi-physics coupling simulation and multi-objective optimization algorithm is adopted in the crystal growth stage, the magnetic field intensity, the heating power and the crystal pulling parameters are adjusted in real time, and the oxygen content and the growth rate are balanced; and the tail stress is relieved through a gradient field reduction technology, and finally, the low-defect and high-uniformity silicon single crystal is obtained. Melt flow and temperature field uniformity are accurately regulated and controlled through a high-temperature superconducting magnetic control technology, dynamic monitoring and a multi-target optimization algorithm are combined, the growth quality of silicon single crystals is remarkably improved, the defect rate and energy consumption are reduced, and meanwhile efficient and stable production of large-size crystals is achieved.

An object of the present invention is to provide a novel technique capable of manufacturing a large-diameter AlN substrate.The present invention is a method for manufacturing an AlN substrate, including a crystal growth step S30 of forming an AlN layer 20 on a SiC underlying substrate 10 having through holes 11. In addition, the present invention is a method for forming an AlN layer including the through hole formation step S20 of forming the through holes 11 in the SiC underlying substrate 10 before forming the AlN layer 20 on the SiC underlying substrate 10.

The invention provides a combined crucible and an oxide crystal growth method.The combined crucible is used for oxide crystal growth and comprises a first ceramic crucible, a second ceramic crucible, a third ceramic crucible and a fourth ceramic crucible, the graphite layer is arranged in the first ceramic crucible; the second ceramic crucible comprises a second containing space with the top open and the bottom closed, and the second ceramic crucible is arranged in the graphite layer. The combined crucible is designed by adopting an iridium-free scheme, so that the cost of the crucible can be greatly reduced.

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and relates to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, a non-doped GaN layer, an N-type GaN layer, an electron dredging layer, a multi-quantum well layer, an electron blocking layer and a P-type GaN layer which are stacked on the substrate in sequence, the electron dredging layer comprises a first sub-layer, a second sub-layer, a third sub-layer and a fourth sub-layer which are sequentially stacked, the first sub-layer is a Si3N4 layer, the second sub-layer comprises an AlGaN layer, a first InGaN layer and a first GaN layer which are periodically and alternately stacked, the third sub-layer comprises a second GaN layer and a second InGaN layer which are periodically and alternately stacked, and the fourth sub-layer is a Si3N4 layer. And the fourth sub-layer comprises an AlInGaN layer, a third InGaN layer and a third GaN layer which are periodically and alternately stacked. According to the invention, while the electronic expansibility is improved, excessive electrons are prevented from entering the multi-quantum well layer to generate electron overflow.

Various forms of Mga(Six(GeySn1-y)1-x)Ob are disclosed. In some aspects, an epitaxial layer comprises single crystal Mga(Six(GeySn1-y)1-x)Ob, wherein 1.5≤a≤2.5, 3≤b≤5, 0≤x≤1, and 0≤y≤1; wherein the single crystal Mga(Six(GeySn1-y)1-x)Ob has a crystal symmetry compatible with a substrate or an underlying layer on which the single crystal Mga(Six(GeySn1-y)1-x)Ob is grown. In some aspects, a semiconductor structure includes an epitaxial layer comprising single crystal Mga(Six(GeySn1-y)1-x)Ob, wherein 1.5≤a≤2.5, 3≤b≤5, 0≤x≤1, and 0≤y≤1; The semiconductor structure also includes a substrate or an underlying layer on which the single crystal Mga(Six(GeySn1-y)1-x)Ob is grown; wherein the single crystal Mga(Six(GeySn1-y)1-x)Ob has a crystal symmetry compatible with the substrate or the underlying layer.

The present invention relates to the field of the preparation of silicon carbide crystals, and in particular to a device and method for the diameter expansion growth of a silicon carbide crystal. The device comprises a graphite diameter expansion device comprising a porous graphite diameter expansion ring. The porous graphite diameter expansion ring serves as a gas channel and is used for releasing an accumulated growth atmosphere during the diameter expansion growth of the silicon carbide crystal. The porous graphite diameter expansion ring not only ensures the smoothness of gas exhaust, but also solves the problem of polycrystalline silicon carbide growing on an edge of a silicon carbide seed crystal hindering the diameter expansion of the silicon carbide crystal. In addition, in the axial direction of the graphite diameter expansion device and in a direction away from the silicon carbide seed crystal, the porosity of the porous graphite diameter expansion ring gradually decreases, so that the growth atmosphere in a graphite crucible is controlled to ensure that the growth atmosphere can be discharged in time when the growth atmosphere is excessive in the early stage, and the discharge amount is reduced when the growth atmosphere in the later growth stage is insufficient, thus increasing the growth rate of the silicon carbide crystal. In addition, hard graphite felt is arranged around the diameter expansion device to serve as a heat insulation material, so that a rational temperature gradient of silicon carbide crystal growth is maintained.

A crystal growth method and system, an apparatus, and a storage medium. The crystal growth method comprises: determining a parameter set of a crystal growth device in a target heat, wherein the parameter set comprises at least one target parameter, and the target parameter is a parameter, affecting crystal growth, in the crystal growth device; acquiring a first temperature measurement value of a first temperature measurement point of the crystal growth device in a target time period of the target heat; and on the basis of the target parameter and the first temperature measurement value, by means of a crystal plane temperature determination model, determining a simulated crystal plane temperature corresponding to the first temperature measurement value.

The invention discloses a method and a device for growing a semiconductor material film based on machine learning. The method comprises the following steps: acquiring current process parameters; controlling the semiconductor material film to grow under the current process parameters according to the current process parameters; acquiring current film quality data of the semiconductor material film in real time, and predicting future growth quality of the semiconductor material film corresponding to the current process parameter by using a preset machine learning algorithm according to the current film quality data of the semiconductor material film; judging whether the future growth quality of the semiconductor material film is smaller than a preset growth quality threshold value or not, and if yes, ending growth; and if not, adjusting the current process parameters by using a machine learning algorithm, and continuing to execute the step of controlling the semiconductor material film to grow under the current process parameters according to the current process parameters. According to the method, the high controllability of the growth process and the stable improvement of the product quality are ensured, and the accuracy of material performance prediction is promoted.

The present invention relates to a crucible with a cavity for growing a SiC volume mono crystal by sublimation growth in a direction of growth (Y). The crucible comprises an end wall (110) with a seed holder (112) for holding a SiC seed crystal in the cavity, the end wall (110) extending in a direction (r)perpendicular to the direction of growth (Y); a side wall (140) extending in the direction of growth (Y), the side wall (140) preventing permeation of a doping gas from an external into the cavity, the doping gas for doping the SiC volume mono crystal during the sublimation growth; and a diffusion region (114) allowing permeation of the doping gas from the external in the cavity, wherein the diffusion region (114) is located between the seed holder (112) and an edge (142) of the side wall (140).

Volumetric shapes of SiC starting materials for boule growth. Methods of controlling vapor deposition growth of SiC boules, and providing directional flux. Methods of increase the number of wafers, the number of electronic components and the number of operable devices from a single boule growth cycle.

A method of analyzing semiconductor wafers includes capturing a first image of a first crystalline material, etching a first surface of the first crystalline material to delineate etch defects in the first crystalline material, and capturing a second image of first crystalline material after etching the first surface of the first crystalline material. Based on the second image, labels of etch defects delineated in the first surface of the first crystalline material are generated. The first image and the labels of etch defects are spatially coordinated to form a defect map identifying one or more defects in the first image based on the delineated etch defects, and based on the defect map and nondestructive data obtained from a second crystalline material, defects in the second crystalline material are identified.

The embodiment of the invention provides a silicon carbide crystal growth furnace and a silicon carbide crystal growth method, the silicon carbide crystal growth method is applied to the silicon carbide crystal growth furnace, and relates to the technical field of silicon carbide crystal growth. The silicon carbide crystal growth furnace comprises a crucible, a first flow guide cover, a second flow guide cover and a filtering piece, the growth atmosphere in the crucible can flow upwards along an external cavity formed by the wall surface of the crucible and the second flow guide cover, and after reaching the top, the growth atmosphere flows downwards along the inner wall of the second flow guide cover and the outer wall of the first flow guide cover and finally enters a crystal growth cavity formed by the first flow guide cover and the second flow guide cover; and a filtering piece is arranged between the first flow guide cover and the second flow guide cover. Therefore, the speed of the growth atmosphere can be ensured to be relatively uniform, the concentration of the growth atmosphere is improved, and the growth quality of silicon carbide crystals is improved.

The invention provides a gas phase transportation optimization device based on a PVT method. The device comprises a crucible, the interior of the crucible is used for containing raw materials to form a raw material area, seed crystals are arranged at the top of the crucible, and a heater is arranged on the periphery of the crucible; the at least one stage of conveying mechanism is arranged in the crucible, and the multiple stages of conveying mechanisms are arranged at intervals in the radial direction of the crucible; wherein each stage of conveying mechanism extends from the bottom of the crucible to the top of the crucible, a conveying channel is formed in each conveying mechanism, and the conveying channels are used for promoting gas-phase substances formed by sublimation of raw materials to be conveyed from the raw material area to the surface of the raw material area; and the extension terminal, close to the top of the crucible, of the conveying mechanism is located above the surface of the raw material area, so that the gas-phase substances are promoted to escape from the surface of the raw material area through the conveying channel. According to the device provided by the invention, the problems that gas-phase substances are difficult to transport in a raw material area in the single crystal growth process by a traditional PVT method, and meanwhile, the gas-phase substances are recrystallized on the surface of the raw material area, so that self-escape is hindered are solved.

The invention discloses a silicon carbide crystal growth container and silicon carbide crystal growth equipment with the same. The silicon carbide crystal growth container comprises a container main body, the heating device is positioned outside the container main body; the inner cylinder is arranged in the container main body, an inner containing space is formed in the inner cylinder, an outer containing space is formed between the outer peripheral surface of the inner cylinder and the inner peripheral surface of the container main body, and silicon carbide powder is contained in the inner containing space and the outer containing space; the heights of the silicon carbide powder in the inner accommodating space and the outer accommodating space are different; the filtering part is arranged in the container main body and is positioned above the silicon carbide powder. The silicon carbide crystal growth container provided by the embodiment of the invention has the advantages of uniform crystal growth rate, high yield and the like.

A device includes a substrate, first and second electrodes supported by the substrate, and a heterostructure supported by the substrate. The heterostructure includes first and second dielectric layers and a ferroelectric III-nitride alloy layer disposed between the first and second dielectric layers, the ferroelectric III-nitride alloy layer including a Group IIIB element. The ferroelectric III-nitride alloy layer is electrically spaced from the first and second electrodes by the first and second dielectric layers, respectively.

Provided is a SiC polycrystal manufacturing method based on a sublimation recrystallization method using a SiC seed crystal. In the method, a polycrystalline SiC substrate that is a SiC polycrystal produced by a sublimation recrystallization method and contains a greater amount of α-SiC than β-SiC is used as the SiC seed crystal.

A silicon carbide seed is provided, including a first seed layer and a second seed layer. The first seed layer includes a polycrystalline silicon carbide material. The second seed layer is directly attached to the first seed layer, where the second seed layer includes a single crystal silicon carbide material, and a thickness ratio (T2 / T1) of a thickness T1 of the first seed layer to a thickness T2 of the second seed layer is in a range of 10% to 50%.

The invention discloses an inflation method for regulating and controlling the growth rate of silicon carbide crystals and a related device, and relates to the technical field of semiconductors, and the inflation method comprises the following steps: obtaining the mass loss rate of a silicon carbide crystal growth system based on a weighing sensor; the quality loss rate is compared with a theoretical loss rate, a deviation rate is obtained, and the theoretical loss rate is the quality loss rate meeting the production requirement under the current technology; acquiring a growth stage parameter, judging whether the growth stage parameter reaches a preset value or not, if the growth stage parameter reaches the preset value, adopting a first control strategy, and if the growth stage parameter does not reach the preset value, adopting a second control strategy, the growth stage parameters comprise the silicon carbide crystal thickness corresponding to the preset crystal growth time. According to the method, the uniformity of the resistivity of the silicon carbide crystal is improved by regulating and controlling the doping gas proportion in the growth process of the silicon carbide crystal.

The invention discloses a structure for adjusting the temperature gradient of an aluminum nitride crystal growth crucible through a physical vapor transport method, and belongs to the technical field of crystal growth equipment.The structure comprises an equipment cavity, a reflecting plate and a reflecting plate lifting device, a heat preservation structure is arranged in the equipment cavity, and a heater is arranged in the heat preservation structure; the reflecting plate lifting device comprises a lifting shaft connected with the reflecting plate, and the lifting shaft is arranged at the top of the equipment cavity, is symmetrical with the middle axis of the equipment cavity and is used for controlling the position of the reflecting plate, so that the lifting rate of the reflecting plate is 100-100000 [mu] m / h and is adjustable; and the reflecting plate is located in the heat preservation structure of the equipment cavity, is a tungsten metal round cake with the surface being patterned and is assembled at the position 10-50 mm above the heater, the radial / longitudinal temperature gradient of the top of the crucible can be adjusted, and when the crucible is used for growth of aluminum nitride crystals, on one hand, the thermal stress of the aluminum nitride crystals can be effectively inhibited; on the other hand, the growth rate of the aluminum nitride crystal can be regulated and controlled in real time, and finally the high-quality large-size aluminum nitride crystal is obtained.

The invention belongs to the technical field of SiC crystal growth, and particularly relates to a thermal field component for SiC crystal growth and a preparation method of the thermal field component. The thermal field component comprises a thermal field component body, and the thermal field component body is made of a porous tantalum carbide material. The thermal field component can efficiently filter carbon particles, has corrosion resistance and long service life, and can remarkably reduce the production cost.

The invention discloses a composite crucible for large-size AlN single crystal growth and a preparation method thereof, and belongs to the technical field of PVT method crystal growth. A heat conduction device is arranged in a cavity of the composite crucible and is composed of a plurality of high-purity graphite plates, the high-purity graphite plates are distributed at equal included angles to form a wing-shaped structure, the inner surface of the high-purity graphite crucible and the surfaces of the high-purity graphite plates are covered with a metal tantalum Ta layer or a TaC coating, and the high-purity graphite plates and the high-purity graphite plates are subjected to heat conduction under the temperature environment of 1800-2600 DEG C, so that the heat conduction effect of the high-purity graphite plates is improved. And TaC / C material layers are formed on the inner surface of the high-purity graphite crucible and the high-purity graphite plate. The heat conduction efficiency of the large-size crucible can be greatly improved, the problem that heat transfer from the side wall of the crucible to the source powder center is insufficient in the powder burning process can be remarkably solved, the uniformity of large-size AlN crystals is improved, thermal stress in crystal growth is relieved, and favorable conditions are created for preparing large-size and high-quality AlN single crystals.

The utility model relates to a shutter device and molecular beam epitaxy equipment. Comprising a baffle plate configured to swing between a first position and a second position; when the baffle plate is in the first position, a beam injection track between the source furnace and the film growth area is blocked by the baffle plate, the baffle plate and the beam injection track are obliquely intersected, and a free falling body track formed at any position on the baffle plate is outside the source furnace; when the baffle is in the second position, the beam injection track between the source furnace and the thin film growth area does not intersect with the baffle, and the baffle is located below the source furnace; the first end of the support is connected with the baffle, and the second end extends away from the baffle; the bracket can swing to drive the baffle to swing between a first position and a second position; the power assembly is configured to drive the support to swing, and the power assembly is connected with the second end of the support. According to the technical scheme, blockage of the injection orifice of the source furnace can be reduced, and the film growth quality can be improved.