139results about "From condensed vapors" patented technology

Crystal growth systems with a baffle are provided. In one example, a crystal growth system for growing crystalline material, the crystalline material including silicon carbide, includes a seed holder configured to hold a silicon carbide seed crystal. The seed crystal provides a growth surface for growth of the silicon carbide crystalline material. The system includes a crucible at least partially defining a crystal growth chamber. The system includes a source material. The system includes one or more baffles within the crystal growth chamber and spaced apart from the source material. The one or more baffles include one or more apertures defined through the one or more baffles. The baffle includes a long dimension that is non-perpendicular to the growth surface of the seed crystal.

Crystal growth systems for growing crystalline material comprising silicon carbide are provided. In one example, the crystal growth system includes a crucible at least partially defining a crystal growth chamber. The crystal growth chamber has a plurality of zones, each zone associated with a different processing profile. The system includes a silicon carbide crystal. The system includes a source material.

Systems and methods for defect mitigation in silicon carbide crystal growth systems are provided. In an aspect, an example method includes providing a crystalline material in a first zone of the crystal growth chamber. In some implementations, the example method includes providing a silicon carbide vapor source material in a second zone of the crystal growth chamber. The example method includes providing an etching agent in the crystal growth chamber. The example method includes controlling a temperature gradient in the crystal growth chamber such that a first temperature in the first zone is greater than a second temperature in the second zone to implement an etching process on the crystalline material in the crystal growth chamber.

The invention relates to a method for fabricating a two-dimensional (2D) heterostructure comprising depositing graphene on a substrate in an ultrahigh vacuum (UHV) chamber at a first temperature and a first chamber pressure to form sub-monolayer graphene on the substrate; and subsequently depositing borophene onto the sub-monolayer graphene on the substrate in the UHV chamber at a second temperature and a second chamber pressure so as to couple the borophene with the graphene on the substrate to form a 2D borophene-graphene heterostructure comprising lateral and / or vertical heterostructures.

The application provides a Pd6(SR) 12 cluster with an octahedral structure, the Pd6(SR) 12 cluster is a cyclohexanethiol ligand-protected palladium cluster, contains 6 Pd atoms, 12 cyclohexanethiol ligands, the 6 Pd atoms form an octahedral core, and the sulfur atoms in the cyclohexanethiol ligands are connected with the Pd atoms peripherally, and each sulfur atom is connected with two Pd atoms. The application further discloses a preparation method of the Pd6(SR) 12 cluster, and the application fills the technical vacancy of synthesizing Pd clusters with structures other than a ring structure, and has high popularization value.

The objective of the invention is to provide an improved solution for realizing semiconductor substrates. [Solution] The present invention relates to a method for manufacturing a semiconductor substrate 100. The method comprises supplying a base substrate 10. The method further comprises growing a first group III nitride semiconductor layer 20 on the base substrate 10 along a growth direction A under a hyperstoichiometric nitrogen supply, wherein the surface 22 of the first group III nitride semiconductor layer 20 includes depressions 24 defined by facets 26 of the first group III nitride semiconductor layer 20 oriented obliquely to the growth direction A. The method further comprises growing a second group III nitride semiconductor layer 30 on the first group III nitride semiconductor layer 20 along the growth direction A, covering the depressions 24. The present invention further relates to a semiconductor substrate 100 preferably manufactured by this method.

This application discloses a wafer carrier tray and an epitaxial growth apparatus, relating to the field of semiconductor epitaxial growth technology. By setting the first surface of the wafer carrier tray to support the wafer as a convex structure, the center of the wafer is in direct contact with the center of the first surface of the wafer carrier tray, while there is a gap between the periphery of the wafer and the periphery of the first surface of the wafer carrier tray. This results in the temperature at the periphery of the wafer being lower than the temperature at the center of the wafer, and consequently, the epitaxial growth rate at the periphery is lower than that at the center of the wafer. Ultimately, this yields an epitaxial wafer with a more stable thickness model during the epitaxial growth process, characterized by a higher center and lower edges. This reduces the impact of uneven density distribution of the wafer carrier tray and the wafer's own curvature on the thickness model of the epitaxial wafer, thereby reducing the probability of product scrap due to changes in the thickness model and improving the stability of the epitaxial growth process and product quality.

This invention provides a crucible and a method for growing silicon carbide crystals, belonging to the field of silicon carbide preparation technology. The crucible includes a graphite body, a first cover, and a second cover. The graphite body has a first cavity with an opening at its top. The first cover is disposed on the opening, and its side facing the first cavity is used to fix a seed crystal. The first cover has a channel that penetrates the first cover along its height. The second cover is disposed on the first cover, and a second cavity is formed between the second cover and the first cover. The crucible and silicon carbide crystal growth method provided by this invention can utilize the hexagonal void defect formed on the back of the seed crystal during crystal growth, using this defect as a channel to introduce molten dopant elements from the top of the seed crystal into the growing silicon carbide crystal, thereby forming a uniformly distributed optical and color effect within the grown crystal.

We provide high-quality silicon carbide epitaxial substrates with a silicon carbide epitaxial layer that has few defects. [Solution] The silicon carbide epitaxial substrate 10 comprises a silicon carbide substrate 20 having a first surface and a silicon carbide epitaxial layer 30 located on the first surface, wherein the first surface 20a is the (000-1)C surface, and the stacking fault density confirmed by photoluminescence imaging on the upper surface 30a of the silicon carbide epitaxial layer is 1.2 cm². -2 The ratio of the stacking fault density to the basal plane dislocation density on the first surface of the silicon carbide substrate is less than 0.05%, and the basal plane dislocation density on the first surface of the silicon carbide substrate is 3000 cm². -2 It is less than.

The application discloses a light-emitting diode epitaxial wafer and a preparation method thereof and a light-emitting diode, and relates to the field of semiconductor photoelectric devices. The light-emitting diode epitaxial wafer comprises a substrate and a buffer layer, a non-doped GaN layer, an N-type GaN layer, a stress release layer, a multi-quantum well layer, an electron blocking layer and a P-type GaN layer arranged on the substrate in sequence, wherein the stress release layer comprises a first sub-layer and a second sub-layer; the first sub-layer is a first Si-doped GaN layer; the second sub-layer comprises alternately stacked AlInGaN layers and second Si-doped GaN layers; the Si doping concentration of the second Si-doped GaN layer is less than the Si doping concentration of the first Si-doped GaN layer; and the Si doping concentration of the first Si-doped GaN layer is less than the Si doping concentration of the N-type GaN layer. By implementing the application, the light-emitting efficiency of the light-emitting diode can be improved.

The present application relates to the field of silicon carbide ingot, provide a kind of high-purity polycrystalline silicon carbide ingot and its preparation method and growth mould;The method comprises the following steps: S1, proportionally mix silicon carbide powder and boron carbide powder, obtain uniform mixed powder;S2, the disposable consumable is pretreated, to form porous graphite coating on growth surface, wherein the porous graphite coating contains rare earth oxides;S3, first the disposable consumable after pretreatment is assembled into growth mould with reusable parts, then silicon carbide coarse powder and the mixed powder are sequentially laid in the growth mould, and then physical vapor transport growth is carried out, and polycrystalline silicon carbide ingot is separated;S4, the polycrystalline silicon carbide ingot after separation is treated by oxidation and decarburization, and high-purity polycrystalline silicon carbide ingot is obtained;The high-purity polycrystalline silicon carbide ingot prepared by the method is not only low in cost but also high in purity.

The application provides a silicon carbide single crystal production tool, which comprises a first crucible assembly, a second crucible assembly and a heat-conducting insulation assembly. The first crucible assembly is connected with a heating device. The silicon carbide powder is placed in the second crucible assembly. The second crucible assembly is placed in the first crucible assembly. The heat-conducting insulation assembly is located on the circumferential outer side of the first crucible assembly and in the first crucible assembly. The technical scheme of the application effectively solves the problem of inconsistent product thickness caused by uneven heating in the production process of large-size silicon carbide single crystals in the prior art.

The application provides a silicon carbide crystal growth device and relates to the technical field of silicon carbide crystal manufacturing.The silicon carbide crystal growth device comprises a device main body, a raw material cavity and a crystal growth cavity are formed in the device main body, the crystal growth cavity is communicated with the upper portion of the raw material cavity, a seed crystal is arranged at the top of the crystal growth cavity, the seed crystal comprises a middle region and an outer region which are distributed along the radial direction, and the outer region surrounds the middle region; a heat shielding layer is arranged in the crystal growth cavity, the heat shielding layer is arranged below the seed crystal, the heat shielding layer is configured as an annular member, and the heat shielding layer is arranged between at least part of the outer region and the raw material cavity. The silicon carbide crystal growth device can reduce the temperature of the edge of the silicon carbide crystal, reduce the growth speed of the edge of the silicon carbide, avoid the defects such as polycrystallization, cracks and dislocation aggregation of the edge of the silicon carbide caused by the too fast growth speed of the edge of the silicon carbide, and improve the quality of the silicon carbide crystal. In addition, the structure is simple, and the setting cost is low.

The present invention provides an assistance device, an assistance method, and an assistance program that are for assisting operation of a crystal growth furnace. An assistance device according to the present invention comprises: a calculation unit that outputs a temperature distribution of a crystal surface on the basis of temperature data measured in a crystal growth furnace, information indicating the position and output of a heating device which heats the crystal growth furnace, and information indicating the position of the crystal surface in the crystal growth furnace; and a display unit that displays the temperature distribution of the crystal surface output by the calculation unit.

A method for producing silicon carbide, SiC, epitaxial wafers in a wafer growth system (1) comprising an outer container, an insulating container arranged inside the outer container, a growth container (2) arranged inside the insulating container, and a heating arrangement arranged outside the outer container to heat an inside of the growth container (2). The method comprises providing a source material (3) of polycrystalline SiC in the growth container (2), providing a substrate (4) of monocrystalline SiC in the growth container (2) substantially parallel to the source material (3), the substrate (4) having a doping concentration of ≤5—1016 cm−3, increasing the temperature in the growth container (2) to a sublimation temperature of the source material (3), maintaining the temperature in the growth container (2) until a conductive layer (6) of monocrystalline SiC having a thickness of ≥10 μm and having a doping concentration of ≥1·1018 cm−3 has grown on the substrate (4). The substrate (4) and the grown conductive layer (6) together define an epitaxial boule. The method further comprises cooling the epitaxial boule to room temperature, and slicing the epitaxial boule, through the substrate (4) in a plane substantially parallel to the grown conductive layer (6), into an excess substrate (8) and an epitaxial wafer comprising a substrate layer (7) having the grown conductive layer (6) thereon.

A device and a method for growing a silicon carbide single crystal based on a PVT method are provided. The device comprises a growth chamber, a crucible, one or more lifting rods, and a stock bin for holding raw materials. The crucible, the lifting rods and the stock bin are located within the growth chamber, and the stock bin is located within the crucible. The stock bin comprises independent storage compartments, and each of the lifting rods extends from a bottom of the crucible, passes through a bottom of one of the storage compartments, and extends to a top of the storage compartment. The lifting rod moves upward and downward to seal the storage compartment, or creating a channel for gas-phase raw materials transmission at the top of the storage compartment. This device increases the utilization rate of raw materials and improves the quality of crystal growth.

The application discloses an epitaxial method of a very long wave InAs / InAsSb superlattice infrared detector and relates to the technical field of semiconductor devices. The method comprises the following steps: first, preheating a GaSb substrate; then, growing an InAs layer by applying In beam and As beam; then, growing a transition layer by synchronously increasing As and Sb beams at equal increments; then, growing an InAsSb layer by stabilizing As and Sb beams; then, synchronously adjusting As and Sb beams at equal decrements to restore the initial As beam and make the Sb beam zero; and then, repeating the growth process of each layer to form a superlattice structure, and obtaining a target epitaxial wafer through post-processing. The application realizes smooth transition of the InAs layer and the InAsSb layer by precisely controlling the beam and the V / III ratio, obtains a high-quality superlattice structure, guarantees the very long wave response characteristics, and significantly improves the response rate, the detection rate and the working stability of the detector.

A heterostructure includes a template layer and a ferroelectric semiconductor layer supported by the template layer, the ferroelectric semiconductor layer being single crystalline. The ferroelectric semiconductor layer includes an alloy of a III-nitride material. The alloy includes a Group IIIB element. The ferroelectric semiconductor layer is in contact with the template layer. The ferroelectric semiconductor layer has a thickness less than 100 nm.

To provide a system and method for growing bulk semiconductor single crystals, more specifically, for growing bulk semiconductor single crystals such as silicon carbide based on physical gas-phase transport. [Solution] The sublimation system comprises a crucible (102) having a longitudinal axis (120) and side walls (116) extending along the longitudinal axis (120), wherein the crucible (102) comprises fixing means for at least one seed crystal (110) and at least one raw material compartment (104) for containing raw materials (108), and a heating system formed to generate a temperature field around the circumference of the crucible and along the longitudinal axis of the crucible, wherein the crucible (102) comprises at least one first thermal radiation cavity (118) located opposite the fixing means and adjacent to the raw material compartment (104), and the first thermal radiation cavity (118) is closed on all sides thereof.

This application provides a graphite ring, a preparation method for the graphite ring, and an epitaxial device. The graphite ring may include a graphite matrix and a TaC layer. The graphite matrix has an annular structure, and the graphite matrix includes an upper surface, a lower surface, an inner wall of the matrix, and an outer wall of the matrix. The TaC layer covers the inner wall of the matrix. On the graphite matrix, a part or all of a surface other than the inner wall of the matrix is exposed, or a part or all of a surface other than the inner wall of the matrix is covered with a SiC layer. In the graphite ring provided in this application, the TaC layer covers the inner wall of the matrix, and the TaC layer can protect the inner wall of the matrix, to suppress the inner wall of the matrix from generating a falling object, so that the graphite ring has a long replacement interval. The TaC layer can further hinder deposition of SiC, so that the graphite ring has a long maintenance interval. According to the graphite ring provided in this application, on the graphite matrix, the part or all of the surface other than the inner wall of the matrix is exposed or covered with the SiC layer, so that the graphite ring has good heat dissipation performance.

The invention relates to a group III-V semiconductor material, which has a metastable hexagonal crystal structure, in the form of a thin film up to 1µm thick. Figure 1.

The disclosure is directed to methods for spalling a substrate, products made by performing the methods, and apparatus and medium capable of performing the methods. One method includes obtaining a substrate; depositing a seed layer on the substrate; generating an edge around the seed layer for crack initiation in the substrate; and electroplating a stressor layer on the seed layer in an electroplating bath to spall the substrate to obtain a spalled substrate and a spalled film.

This invention provides a raw material loading method for growing SiC single crystals using the PVT method and its application. This method cleverly utilizes the axial temperature gradient from the bottom to the top of the PVT furnace. The bottom layer (C powder) is located in a relatively low-temperature zone, its main function being to adsorb the permeated silicon liquid and initiate an in-situ synthesis reaction, while also acting as a "buffer" for the gaseous Si / C ratio. The middle layer (Si powder) is located in a medium-temperature zone (above ~1414℃), where the silicon powder can be controlled to melt, and the liquid silicon permeates downwards to the bottom C powder layer via capillary action. The top layer (SiC powder) is located in the highest temperature zone, serving as the main sublimation source, providing a stable Si-C gaseous composition, and its textured surface enhances sublimation uniformity.

This invention relates to a molecular beam epitaxy shutter and apparatus, and pertains to the field of epitaxial growth technology. In the molecular beam epitaxy shutter of this invention, the first and second blades of the shutter plate have an included angle, such that when the shutter plate blocks the furnace opening, the molecular beam stream and thermal radiation emitted from the furnace opening intersect the shutter plate at an angle. The molecular beam stream and thermal radiation are reflected by the shutter plate and fall outside the furnace, thus avoiding the problem that existing shutter structures cannot effectively prevent source material splashing and thermal reflection to the furnace opening, affecting the stability of epitaxial growth and the coating quality.

The present invention relates to a seed crystal assembly for growing a single crystal boule in a physical vapor transport, PVT, process. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. A seed crystal assembly (136) comprises a base structure (138) which is connectable to a crucible (104), the base structure (138) having a base diameter (D) across a central axis (126) of the seed crystal assembly (136) and base height (H) along the central axis (126), and a single crystal seed crystal (112) which is designed for growing the single crystal boule on a growth surface (130). The single crystal seed crystal (112) is attached to the base structure (138), the seed crystal (112) having a seed crystal diameter (d) across the central axis (126) and a seed crystal height (h) along the central axis (126), wherein a specific heat conductivity of the base structure (138) differs by less than or equal to 25 % from a specific heat conductivity of the seed crystal (112) at a growth temperature between 2000 °C and 2600 °C.

A silicon carbide wafer includes a silicon carbide substrate made of an n-type silicon carbide doped with an n-type impurity. The silicon carbide substrate contains boron, and a concentration of the boron in the silicon carbide substrate is 9.0×1016 / cm3 or more.

Semiconductor element (10, 20, 30) comprising: a base substrate (11, 21, 31) comprising a Ga2O3-based crystal having a thickness of not less than 0.05 µm and not more than 50 µm; an epitaxial layer (12, 22, 32) comprising a Ga2O3-based crystal formed on the substrate (11, 21, 31), and a support substrate (17, 37, 52) formed from a material with higher thermal conductivity than the Ga2O3-based crystal and attached to a lower surface of the base substrate (11, 21, 31), and / or a support substrate (15, 51) formed from a material with higher thermal conductivity than the Ga2O3-based crystal and attached to an upper surface of the epitaxial layer (12, 22, 32).

A method of manufacturing silicon carbide seed crystal and method of manufacturing silicon carbide ingot are provided. The silicon carbide seed crystal has a silicon surface and a carbon surface opposite to the silicon surface. A difference D between a basal plane dislocation density BPD1 of the silicon surface BPD1 and a basal plane dislocation density BPD2 of the carbon surface satisfies the following formula (1):D=(BPD1−BPD2) / BPD1≤25%  (1).

The utility model relates to the technical field of silicon carbide single crystal growth, in particular to a crucible device for silicon carbide single crystal growth, which comprises a crucible body, a crucible cover buckled on the crucible body, a porous graphite plate arranged in the crucible body, a porous graphite cylinder and a heating component arranged on the peripheral side of the crucible body, the porous graphite cylinder and the crucible body are coaxially arranged; a partition plate assembly is arranged at the upper end of the porous graphite cylinder; the porous graphite plate is placed above the porous graphite cylinder; a small graphite crucible is also arranged in the crucible body; and a crystal form stabilizer is accommodated in the small graphite crucible. The small graphite crucible is arranged and used for containing the crystal form stabilizer, and the porous graphite cylinder and the porous graphite plate are combined to filter gas components generated by sublimation, so that impurity particle inclusions and carbon inclusions in silicon carbide single crystals can be reduced, crystal form transformation can be inhibited, and single-crystal-form silicon carbide crystal ingots grow; and the quality of the silicon carbide single crystal is improved.

The application belongs to the field of semiconductor crystal growth, and discloses a seed crystal automatic bonding process in a particle-free environment, aiming at solving the problems of particle pollution, positioning accuracy fluctuation and uneven glue layer in seed crystal bonding. Its characteristics are as follows: a clean positive pressure environment is constructed through double filtration and static elimination; the seed crystal is activated by plasma cleaning; six-dimensional submicron alignment compensation is performed by a visual module; a non-contact precision glue application is performed by using a piezoelectric dispensing valve; temperature control hot pressing bonding and bubble monitoring are performed in a vacuum environment; and finally, automatic quality detection is performed. Through the above scheme, the application realizes high-strength, zero-bubble and pollution-free bonding between the seed crystal and the seed crystal holder, and significantly improves the starting quality and consistency of large-size semiconductor crystal growth.