290 results about "Crystallographic defect" patented technology

A method of depositing at least one fluoride layer comprises: depositing the fluoride layer on a substrate by photoassisted atomic layer deposition, ALD, in a plurality of ALD cycles. The method comprises irradiating the fluoride layer with UV / VIS light at least in some of the plurality of ALD cycles, such as in all ALD cycles, to anneal at least one potential crystal defect in the fluoride layer. The methods can be performed using an apparatus for atomic layer deposition of at least one fluoride layer, thereby producing an optical element comprising a substrate coated with such a fluoride layer, which can be used in an optical arrangement comprising at least one such optical element.

The invention relates to the technical field of semiconductor material growth, and aims to solve the technical problems that the service life of a heating element is shortened due to single atmosphere sharing, the quality is difficult to guarantee due to many crystal defects, the single crystal production cost is high, and the production efficiency is low in the prior art. The invention discloses a single crystal growth device which is characterized by comprising a furnace body, a first chamber, a second chamber, a heating assembly, a growth assembly, an atmosphere isolation and heat conduction assembly, an atmosphere management system and a central control system, the atmosphere isolation and heat conduction assembly is used for separating the furnace body into a first cavity and a second cavity which are isolated in an airtight mode, and efficient heat transfer is achieved. By the adoption of the scheme, atmosphere structure separation and combined crucible design can be achieved, high quality and high purity of crystals are guaranteed, meanwhile, the service life of a heating element is effectively prolonged, and the operation cost is remarkably reduced.

The invention discloses a method for regulating and controlling the strength and plasticity of a FeMnCrCo-series high-entropy alloy based on pre-introduction of multi-dimensional crystallography defects, and relates to the technical field of high-entropy alloy materials. Cleaning in the vacuum induction furnace; performing vacuum melting; casting is conducted; carrying out homogenization treatment; forging treatment; carrying out six-pass hot rolling treatment; first-pass cold rolling treatment; first low-temperature annealing treatment; performing second-pass cold rolling treatment; carrying out secondary low-temperature annealing treatment; third-pass cold rolling treatment; and annealing treatment. Inter-pass annealing treatment is introduced into a cold rolling link of a traditional plate preparation process, and water-cooling quenching is assisted. According to the method, the multi-dimensional crystallographic defects generated in the cold rolling process are reserved in an initial microstructure of the alloy before a mechanical property test, the crystallographic defect type, density and spatial distribution in the initial microstructure of the alloy are regulated and controlled, a multi-dimensional defect strengthening mechanism is constructed, and good strength and plasticity matching of the alloy is achieved.

The invention discloses a Bridgman method growth gallium oxide single crystal abnormity detection method based on multi-mode perception, and relates to the technical field of single crystal preparation, and the method comprises the following steps: S1, collecting optical signals of a melt surface area in a Bridgman method growth gallium oxide single crystal process through a sensor array, synchronously acquiring temperature field data or infrared thermal image data of the region; the method comprises the following steps: acquiring an original spectral data set covering a local area according to a radiation signal under a micron-order spatial resolution, and obtaining initial radiation distribution information; according to the anomaly detection method for growing the gallium oxide single crystal by the Bridgman method based on multi-mode perception, dynamic tracking and accurate positioning of component anomaly in the growth process of the Bridgman method are realized, and an effective technical means is provided for improving the growth quality of the gallium oxide single crystal, reducing crystal defects and improving the process control capability.

According to the topological defect cavity based on the valley photonic crystal and the multi-channel logic device comprising the topological defect cavity, an edge mode, protected by topology, in the topological photonic crystal can resist the influence of backscattering, and a brand new thought is provided for solving the problem of high reflection loss of a defect cavity-waveguide direct coupling system under non-resonant frequency. The topological defect cavity is designed based on the valley photonic crystal, and compared with a traditional photonic crystal defect cavity, low reflection loss can be achieved when the topological defect cavity is directly coupled with the waveguide. Besides, the resonant frequency and mode symmetry of the topological defect cavity have flexible tunability, and the multi-channel logic device based on the topological defect cavity and the harpoon type energy beam splitter is provided by utilizing the characteristics of low reflection loss and tunable resonant frequency of the topological defect cavity. According to the logic device, the output result of the harpoon beam splitter can be reserved, meanwhile, more diversified output results are achieved, and the important application value of the topological defect cavity in the integrated micro-nano photonics is reflected.

The invention relates to high temperature superconducting qubits with disorder induced tunnel barriers. A superconducting qubit circuit and a method of forming a superconducting qubit are disclosed herein. A superconducting qubit circuit includes a superconducting qubit, where the superconducting qubit includes a tunnel junction in a superconducting material having a critical temperature above 1.2 K. The tunnel junction is formed from a disorder-induced tunnel barrier, where the disorder results from spatial crystal defects in the superconducting material.

The invention provides a calcium fluoride crystal defect detection system and method, and relates to the technical field of detection, and the method comprises the following steps: preprocessing a crystal to determine a reference position and environmental parameters, and then respectively carrying out optical uniformity detection and stress birefringence detection to obtain an interference fringe pattern and polarization state change data; and optical path difference data and stress field data are generated. And through spatial registration and data association analysis, extracting areas with both refractive index anomaly and stress anomaly as candidate defect areas, quantifying defect strength and stress influence range, and finally outputting a quality judgment result of the crystal defect. The method improves the defect detection precision and reliability, and is especially suitable for high-precision calcium fluoride crystal quality control.

The invention belongs to the technical field of crystal growth, and relates to a method and a system for regulating and controlling the crystal orientation in real time in a micron-sized single crystal growth process, which are used for realizing real-time microscopic monitoring on the crystal growth state by collecting inherent physical signals of a crystal growth interface area and generating original signal data. Extracting characteristic parameters associated with crystal orientation deviation from the original signal data, generating a crystal orientation deviation characteristic vector, inputting the crystal orientation deviation characteristic vector into a preset mapping model, generating a crystal orientation deviation quantitative index to calculate a local thermal field regulation and control instruction, the micro heat source array is driven to apply a local thermal field gradient to a target area of a crystal growth interface so as to guide the crystal orientation to return, so that global thermal stress fluctuation and new crystal defect hidden dangers caused by traditional large-range thermal field adjustment are avoided, flexible fine adjustment of the crystal orientation is realized, the internal quality and uniformity of crystal growth are greatly improved, and the crystal growth efficiency is improved. Therefore, the single crystal quality and the yield are obviously improved.

The invention discloses a quantitative channel contrast imaging method based on a scanning electron microscope, electronic equipment and a medium, and the method comprises the steps: putting a polycrystalline sample into a scanning electron microscope system, determining an ROI, and obtaining crystal data; adjusting the state of the polycrystalline sample to obtain a cross-correlation diagram of the back scattering electron image and the diffraction contrast value image, so that a back scattering electron beam scanning area is overlapped with the ROI; any position is selected in the ROI, and ECP under the current electron beam energy is calculated; determining a target orientation on the ECP, and determining an optimal path for rotating the polycrystalline sample to the target orientation; acquiring back scattering electron images before and after rotation, performing cross correlation, and moving the polycrystalline sample to enable back scattering electron beam scanning areas before and after rotation to coincide; the scanning electron microscope system is adjusted through the steps, and a series of back scattering electron images of the ROI are collected. According to the invention, the scanning electron microscope can characterize and analyze crystal defects such as dislocation, nano-twin crystal, stacking fault and the like of a block-shaped sample.

The invention belongs to the technical field of crystal defect testing, and particularly relates to an FPD testing method for a monocrystalline silicon wafer micro-viewpoint defect, which comprises the following steps: accurately cutting off the head and the tail of a silicon rod to eliminate an end defect, and preparing a pure substrate by adopting an A-surface machine grinding / B-surface maintaining asymmetric treatment and segmented cleaning process; after pretreatment with a specifically proportioned corrosive liquid, carrying out temperature-controlled etching by using potassium dichromate-hydrofluoric acid to form a characteristic V-shaped pattern on the surface, and realizing visual identification by corresponding different defects to different patterns; gridding detection points are designed based on stress distribution, laser positioning coordinate mapping is performed, an imaging-correction-noise reduction-segmentation-intelligent classification algorithm chain is constructed to realize full-automatic detection, and a detection-analysis-optimization full-process data driving quality control system is established through visual data such as a thermodynamic diagram and a type matrix. And large-scale production of semiconductor silicon wafers is supported.

The invention relates to the technical field of inorganic material synthesis, in particular to a preparation method of a controlled-release magnesium hydroxide fertilizer. Comprising the steps of primary magnesium precipitation, hydrothermal treatment, secondary magnesium precipitation, anaerobic heat treatment and pulping. According to the method, firstly, crystal defects are eliminated through hydro-thermal treatment, crystal seeds with complete crystallinity are obtained, then the crystal seeds are added into a magnesium precipitation reaction system, the principle of Gibbs free energy minimization is followed, newly generated magnesium hydroxide tends to precipitate on the surfaces of the crystal seeds, under the interference effect of a crystal form regulator, the newly generated magnesium hydroxide crystal has many defects, and the magnesium precipitation effect is good. And then oxygen-free heat treatment is carried out, so that the defects of the magnesium hydroxide on the surface layer are further increased, and the initial dissolution and release capacity is improved. The controlled-release magnesium fertilizer which is high in early-stage release speed and long-acting in later-stage slow release is synthesized by utilizing a crystal defect engineering tool, and is different from a traditional coating scheme, and a brand new thought is provided for the design of the controlled-release fertilizer.

The application discloses a method for rapidly and nondestructively detecting the quality of silicon carbide crystals, which comprises the following steps: placing the silicon carbide crystals on a computer tomography (CT) carrier table, and rapidly and nondestructively detecting the typical defects in the silicon carbide crystals by means of computer tomography under specific parameters, image contrast and the identification of the topographic features, so as to directly obtain the defect topography, density distribution and the evolution of the defects with the growth process of the measured ingot at different sections, and significantly improve the visualization degree of the defects in the silicon carbide crystals.

The embodiment of the invention provides a silicon carbide crystal growth method and device and a silicon carbide crystal, relates to the technical field of silicon carbide crystal growth, and aims at solving the technical problem that in the prior art, due to the fact that gas phase flow cannot be dynamically adjusted, crystal defects are easily caused. The method comprises the steps that S1, seed crystals and silicon carbide powder are arranged in a crucible, and the crucible is connected with a gas phase flow adjusting assembly; s2, pumping air from the crucible, filling inert gas into the crucible, and heating the crucible to enable the silicon carbide crystals to enter a growth stage; and S3, in a crystal growth stage, controlling the opening degree of a gas-phase flow channel through a gas-phase flow adjusting assembly so as to adjust the flow of gas reaching the seed crystal until the growth of the silicon carbide crystal is finished. The method can effectively improve the crystal growth rate in the early and middle stages of crystal growth and avoid the carbon wrapping defect of the crystal in the later stage of crystal growth.

The invention discloses an AlScN thin film with a lattice matching buffer layer, the AlScN thin film is of a stacked structure formed by a substrate, an intermediate lattice matching buffer layer and a piezoelectric thin film surface layer, an intrinsic AlN thin film is grown on the substrate in situ to serve as the intermediate lattice matching buffer layer, and AlScN is deposited on the intermediate lattice matching buffer layer to serve as the piezoelectric thin film surface layer; an intrinsic AlN thin film is grown on a substrate in situ to serve as a lattice matching intermediate layer, then an AlScN thin film is prepared through magnetron sputtering double-target co-sputtering, the AlScN thin film of a laminated structure is formed, the crystal quality and lattice matching performance of the AlScN thin film can be remarkably improved, the matching performance is beneficial to reduction of crystal defects and reduction of the phase separation phenomenon in the thin film, and the performance of the AlScN thin film is improved. According to the preparation method, the structural integrity and stability of the material are enhanced, the prepared AlScN film is more compact, more uniform and high in quality, the physical and electrical properties of the material are remarkably improved, and meanwhile, the economic cost is saved.

The invention relates to an epitaxial growth temperature detection method, which comprises the following steps: providing a test wafer which comprises a calibration wafer and a temperature measurement wafer; performing defect treatment on the calibration wafer and the temperature measurement wafer so as to introduce crystal defects into the calibration wafer and the temperature measurement wafer; performing defect repair treatment on the calibration wafer at different target calibration temperatures, and obtaining defect repair information at corresponding temperatures; according to the target calibration temperature and the corresponding defect repair information, establishing a temperature measurement database used for representing the corresponding relation between the crystal state and the growth temperature; transferring the temperature measurement wafer into epitaxial equipment, and raising the temperature of the epitaxial equipment to an epitaxial temperature; obtaining crystal state information of the temperature measurement wafer at different positions; and obtaining the growth temperature corresponding to each crystal state based on the temperature measurement database and the crystal state information of the temperature measurement wafer. According to the epitaxial growth temperature detection method, temperature distribution in the epitaxial process can be effectively monitored and optimized, and the quality of a silicon carbide epitaxial film and the performance stability of a device are remarkably improved.

The invention discloses a wide-temperature-range perovskite optical storage material and a preparation method and application thereof, the chemical general formula of the wide-temperature-range perovskite optical storage material is CsCdCl3: xSb < 3 + >, yMn < + >, Mn < + > is Zr < 4 + >, Sn < 2 + >, Hf < 4 + > or Gd < 3 + >, x is more than 0 and less than 0.06, and y is more than 0 and less than 0.02. The perovskite crystal can generate free carriers under excitation of X-rays or 365-nanometer ultraviolet light, the carriers can be stored in a crystal defect trap, and the storage temperature of the carriers covers an ultra-wide temperature range from 100 K to 350 K, so that wide-temperature-range X-ray imaging, information storage and anti-counterfeiting application can be realized.

The invention relates to the technical field of barium titanate production and preparation, in particular to a barium titanate spherical powder production method. The preparation method comprises the following steps: preparing and atomizing a precursor solution, then spraying the atomized precursor solution into a high-temperature reaction furnace for flame melt crystallization, and then carrying out gradient cooling and spherical curing in a cooling area of the high-temperature reaction furnace, and finally, grading and collecting the prepared spherical barium titanate powder through a collecting system to obtain spherical barium titanate powder with uniform particle size, and carrying out surface functionalization treatment on the collected spherical barium titanate powder through a coating unit to obtain surface-coated spherical barium titanate powder. The precursor solution is subjected to solvent evaporation, thermal decomposition and flame melting in a high-temperature reaction furnace to form barium titanate crystal nucleuses, the crystal nucleuses naturally shrink to form balls under the driving of surface tension, the defect of mechanical damage of a traditional solid phase method or the defect of agglomeration of a liquid phase method is overcome, the crystal defects of the crystal nucleuses are reduced, and meanwhile particle size distribution is more uniform.

A thermal barrier coating (TBC) material with high fracture toughness, calcia-magnesia-alumino silicate (CMAS) corrosion resistance, and ultra-high-temperature sintering resistance, and a preparation and use thereof are provided, belonging to the technical field of high-temperature / ultra-high-temperature TBCs. In the TBC material, ZrO2 is co-doped with different rare earth oxides and a crystal defect concentration and a lattice distortion degree are controlled by a doping amount of the rare earth oxides, resulting in a fully-stabilized cubic fluorite crystal structure showing no phase change at a room temperature to 1,600° C. Moreover, the material exhibits high toughness, CMAS corrosion resistance, ultra-high-temperature sintering resistance, and long service life.

A wafer inspection system employing reflected bright-field microscopy can be adapted with polarizing optics and a mirror to detect polarization-altering defects (such as micropipes) in semiconductor wafers. The polarization-altering defects can be located within the bulk of the semiconductor wafer and can be imaged as bright features on a darker background. The system can also be used for conventional bright-field inspection of non-polarization-altering defects such as contaminants and inclusions.

The invention relates to the technical field of image analysis, in particular to a machine vision-based crystal defect detection method, which comprises the following steps of: extracting defect characteristics based on crystal internal defect images and size information, comparing the defect characteristics with historical defect characteristics, performing preliminary defect classification, and determining a defect classification result; based on a historical defect generation reason analysis result and a defect preliminary classification result, performing preliminary analysis on defect generation reasons, and in combination with the preliminary analysis result of the defect generation reasons and operation data of components in each production step, performing judgment on equipment corresponding to the defect generation reasons; the equipment is maintained and repaired based on the corresponding equipment of the defect generation reason obtained through judgment, the defect generation reason is accurately estimated and analyzed according to the defect characteristics and the equipment operation data, then abnormal equipment is accurately found out and accurately maintained, and the equipment maintenance accuracy is improved.

The invention relates to a bonding method for growing SiC crystals. The bonding method comprises the following steps: 1) spin coating of seed crystals; 2) baking the binder; (3) bonding the seed crystals; 4) hot-pressing, sintering and curing the binder; 5) spinning graphite paper; and 6) bonding, hot-pressing, sintering and curing. The method has the advantages that the method is reasonable in design, uniform thickness distribution and excellent bonding compactness of the adhesive layer between the seed crystal and the seed crystal support can be ensured, cracking of the seed crystal due to the action of non-uniform mechanical stress and thermal stress and crystal defects caused by back sublimation are avoided, meanwhile, the temperature gradient distribution of the seed crystal is uniform, and the quality of the seed crystal is improved. The uniform growth of the silicon carbide crystals is facilitated, and the quality and yield of the silicon carbide crystals are further improved.

A silicon crystal, a silicon crystal defect treatment method, and a defect characterization method. The silicon crystal defect treatment method comprises: providing a silicon crystal, wherein the silicon crystal includes self-interstitial defects; and executing a rapid heat treatment process on the silicon crystal, so as to at least eliminate self-interstitial defects within a preset distance from a surface of the silicon crystal. By means of executing a rapid heat treatment process on a silicon crystal, self-interstitial defects in the silicon crystal can be quickly and effectively reduced or even completely eliminated.

The invention discloses a 7N single crystal copper preparation process based on zone melting and crystal orientation control, which specifically comprises the following steps: S1, raw material pretreatment: purifying 4N copper to 5N grade by adopting electrolytic refining of a nitric acid system, and the carbon content after acid pickling is less than or equal to 1ppm; the invention relates to the technical field of metal material preparation. According to the 7N single crystal copper preparation process based on zone melting and crystal orientation control, impurities in a material are redistributed in a melting zone through local heating, so that separation and removal of the impurities are achieved, in single crystal copper preparation, zone melting can remarkably reduce the content of the impurities in copper, the purity of the copper is improved, and the yield of the 7N single crystal copper is improved. By accurately controlling parameters such as the temperature gradient and the cooling rate in the smelting and solidification process, optimization of crystal orientation is achieved, single crystal copper with an ideal crystal structure can be obtained, the performance of the single crystal copper is improved, and impurities can be removed and crystal defects can be reduced through zone smelting; and crystal orientation control can optimize the crystal structure and improve the performance.

The invention discloses a temperature control method for crystal growth and a related device, and the method comprises the steps: firstly obtaining image data in a crystal growth process, then extracting an aperture image from the image data, obtaining a plurality of aperture thicknesses corresponding to a plurality of positions in the aperture image according to a fixed angle, and carrying out the temperature control of the crystal growth, and then the temperature is controlled based on the ratio of the number of the aperture thicknesses exceeding the preset threshold to the total number of the apertures corresponding to the plurality of aperture thicknesses, so that whether the number of the aperture thicknesses exceeding the preset threshold is too large or too small can be determined by analyzing the image of the aperture part on the surface of the crystal; whether the single crystal grows uniformly or not and whether the temperature is appropriate or not are judged and determined, the cost is low, the anti-interference capacity is high, accurate temperature information can be obtained, the crystal can grow uniformly by controlling the temperature in the crystal growth process, crystal defects are avoided, and the crystal quality is improved.

The invention discloses a method for growing a large-size CLBO crystal by using a new fluxing agent, and belongs to the field of nonlinear optical crystals. The adopted new fluxing agent is Cs2O-Li2O-B2O3-YF3, and the large-size CLBO crystal can be obtained through growth by a high-temperature solution top oriented seed crystal growth method. According to the novel fluxing agent, the solution viscosity can be effectively reduced, and crystal defects are reduced; and the grown large-size CLBO crystal has the advantages of high transmittance, strong deliquescence resistance and the like, and can be used as a frequency doubling device of an ultraviolet laser.

The invention relates to a novel high-precision laser etching method for a high-thermal-conductivity metal film on the surface of an organic material. According to the principle that the arrangement mode of atoms in crystal lattices is determined by crystal defects, crystal sizes and crystal orientations in metal materials, so that the transfer mode of heat energy through phonons and electrons is influenced, and by regulating and controlling the crystal structures of the metal materials, the transverse heat conduction area of instantaneous laser energy in the metal film is reduced; therefore, the energy longitudinally conducted to the interface of the metal film and the substrate under the action of the laser is increased, so that the temperature of the interface of the laser spot edge area is higher than the thermal decomposition temperature of the substrate material, and the solid stripping phenomenon is generated. The method provided by the invention solves the problem that high-thermal-conductivity metal subjected to laser etching is easy to remain at present, improves the precision of a laser etching pattern, and has scientific and industrial practical potential.

The invention discloses a surface etching method for revealing dislocation defects of tellurium indium lead single crystals, and relates to a method for revealing crystal defects. The invention aims to provide a surface etching method capable of accurately exposing crystal defects. The method comprises the following steps: firstly, carrying out directional cutting, multi-stage mechanical polishing and chemical mechanical polishing on a PIT single crystal to obtain a smooth and damage-free surface; and reacting iodine with concentrated nitric acid to generate iodic acid as a main oxidant, adding hydrofluoric acid for activation, diluting with an acetic acid-water mixed solution, and etching the crystal at a low temperature of 10 + / -1 DEG C under ultrasonic assistance. According to the method, the regular triangular conical etching pit can be formed on the PIT single crystal (001) surface, the depth is 100-300 nm, the pit bottom points to the [001] direction, and the dislocation defect is clearly revealed. The method has the advantages of clear etching morphology, high sensitivity, high reliability and simplicity and convenience in operation, and can be applied to the fields of PIT single crystal quality evaluation, defect analysis and growth process optimization.

The invention discloses a bulk acoustic wave resonance device, a forming method thereof and a filter. The middle layer is located on the substrate, and the middle layer comprises a cavity and a plurality of defect sub-layers with crystal defects; the piezoelectric layer is located on the middle layer, the piezoelectric layer comprises a first side and a second side which are opposite to each other, and the middle layer and the substrate are located on the first side; the first electrode layer is located on the first side of the piezoelectric layer; the second electrode layer is located on the second side of the piezoelectric layer, and the projection of the first electrode layer and the projection of the second electrode layer towards the direction of the substrate have an overlapped area. The crystal defect in the middle layer can form a charge trap, and a conductive plane can be prevented from being formed on the surface of the substrate, so that the generated parasitic coupling phenomenon is effectively inhibited, the electric loss is reduced, and the Q value of the resonance device or the electromechanical coupling coefficient (Kt) of the resonance device is improved.

The invention discloses a thickness-controllable SSZ-13 molecular sieve separation membrane and a preparation method and application thereof.The SSZ-13 molecular sieve separation membrane comprises a seed crystal layer, the seed crystal layer is formed in the mode that SSZ-13 molecular sieve crystals are subjected to ball milling treatment to form nanoscale particles, the nanoscale particles are loaded on the outer surface of a hollow fiber carrier through a dip-coating technology, and the SSZ-13 molecular sieve separation membrane is prepared. The thickness of the seed crystal layer is the same as that of the SSZ-13 molecular sieve membrane. A ball-milled seed crystal layer with crystal defects and a zeolite precursor nano-cluster in gel are assembled and healed in a short time to form a continuous defect-free film layer, and the thickness of the seed crystal layer is changed by adjusting the dipping and coating time and the concentration of a seed crystal liquid, so that the thickness of a corresponding film is changed, and the film is prepared. The prepared SSZ-13 molecular sieve membrane shows ultrahigh CO2 permeability and CO2 / CH4 selectivity; the H2S-resistant stability is extremely high, the repeatability is high, and the large-scale production of the molecular sieve membrane for gas separation is facilitated.

The embodiment of the invention discloses a system and method for rapidly representing a grain boundary network by using a series of transmission electron microscope dark field images, and belongs to the field of polycrystalline material microstructure characterization, and the method comprises the following steps: collecting series of dark field images at different positions on a plurality of diffraction rings; correcting drifting of the series of dark field images; for any position in the dark field image, taking the intensity change of the series of dark field images at the same pixel as the feature of the pixel, and calculating the data similarity of the pixel and the features corresponding to a plurality of adjacent pixels; and synthesizing and visualizing the similarity between any pixel and a plurality of adjacent pixels to obtain the form of the crystal boundary network. The method for rapidly characterizing the grain boundary network by using the series of transmission electron microscope dark field images provided by the embodiment of the invention has the advantages of high spatial resolution, insensitivity to crystal defects, small irradiation damage and capability of rapidly and accurately obtaining the grain boundary network, and can support further enrichment of material characterization technologies and provide technical support for development of crystal materials.