369 results about "Crystallographic defect" patented technology

The embodiment of the invention provides a Czochralski method crystal growth device and a regulation and control method, and relates to the technical field of crystal growth. The Czochralski method crystal growth device comprises a furnace body, a crucible, a first magnetic field device, a seed rod and a second magnetic field device, the crucible is arranged in the furnace body, and the first magnetic field device is arranged on the outer side of the crucible in a surrounding mode and located in the furnace body. The seed rod is arranged in the furnace body and is spaced from the crucible; the second magnetic field device is arranged on the seed crystal rod and is positioned in the furnace body; wherein the first magnetic field device is used for generating a magnetic field and acting on a melt in the crucible; the second magnetic field device is used for generating a magnetic field and acting on a growth interface of the melt. The Czochralski method crystal growth device can effectively inhibit convection of melt, so that solute distribution is uniform, and crystal defects are reduced; and the crystal structure can be optimized, and accurate regulation and control of solute are realized, so that the quality and the performance of the crystal are integrally improved.

The invention relates to the technical field of electrochemistry, in particular to a high-entropy Prussian blue analogue positive electrode material, a preparation method and application. Preparing manganese source, iron source, cobalt source, nickel source and copper source solutions; the preparation method comprises the following steps: dispersing a potassium ferrocyanide precursor and a potassium citrate chelating agent in deionized water, adding quantitative manganese source, iron source, cobalt source, nickel source and copper source solutions after uniformly dispersing, and continuously stirring in the adding process until all the solutions are dropwise added; centrifugally washing the obtained mixed solution by using deionized water and absolute ethyl alcohol; drying the centrifugally washed colloid in a vacuum drying box; the obtained solid particles are ground into uniform powder, and the high-entropy Prussian blue analogue positive electrode material is prepared by adopting the preparation method; the material can be used as a sodium ion battery positive electrode material. The content of crystal water is reduced, and side reactions in the electrochemical process are reduced. Excessive crystal defects are improved; the structural stability is improved; and the sodium ion diffusion barrier is reduced.

A method of depositing at least one fluoride layer comprises: depositing the fluoride layer on a substrate by photoassisted atomic layer deposition, ALD, in a plurality of ALD cycles. The method comprises irradiating the fluoride layer with UV / VIS light at least in some of the plurality of ALD cycles, such as in all ALD cycles, to anneal at least one potential crystal defect in the fluoride layer. The methods can be performed using an apparatus for atomic layer deposition of at least one fluoride layer, thereby producing an optical element comprising a substrate coated with such a fluoride layer, which can be used in an optical arrangement comprising at least one such optical element.

The invention provides a silicon carbide crystal growth process which comprises the following steps: A) dividing the interior of a crucible into seven loading areas, namely an F area, a D area, a B area, an A area, a C area, an E area and a G area which are adjacent in sequence by adopting graphite partition plates, filling silicon carbide powder in each loading area, and placing the graphite partition plates perpendicular to the bottom surface of the crucible; the particle size of the silicon carbide powder is 10-80 meshes; and B) fixing a seed crystal on the top of the crucible filled with the silicon carbide powder, and growing the silicon carbide crystal by adopting a PVT method. By optimizing the charging process, the uniformity and the utilization rate of sublimation gas of the powder in the growth process can be improved, the stability of a temperature field in a furnace is facilitated, the probability of crystal phase change is reduced, crystal defects (phase change, polycrystal, dislocation and the like) are reduced, and thus the crystal quality is improved.

A polarizing microscope (1) is provided with: a sample stage (4) on which a sample (8) is placed; a polarizer (3) provided on the light source side of the sample (8); and an analyzer (6) provided on the observation side of the sample (8). At least one of the polarizer (3) and the analyzer (6) is provided such that the polarization direction is inclined with respect to the optical main axis of the sample (8), or such that the included angle between the polarization direction of the analyzer (6) and the polarization direction of the polarizer (3) deviates from a right angle.

The invention provides a preparation method of a ferroelectric film. The preparation method comprises the following steps: providing a first stress layer; depositing a hafnium elementary substance and a zirconium elementary substance on the first stress layer through a magnetron sputtering process to form a ferroelectric alloy layer; the ferroelectric alloy layer is oxidized, crystal defects and crystal phase transformation stress are generated in the ferroelectric alloy layer through heat released in the oxidation process, and a ferroelectric oxidation layer is formed; performing graphical processing on the ferroelectric oxide layer, and depositing a stress material in a graphical processing area of the ferroelectric oxide layer to form a second stress layer; and carrying out rapid thermal annealing treatment on a composite layer formed by the first stress layer, the ferroelectric alloy layer and the second stress layer to promote the crystalline phase of the ferroelectric alloy layer to be converted into a ferroelectric orthogonal phase so as to obtain the ferroelectric film. The invention also provides an application of the preparation method in a microelectronic device.

An object of the present invention is to provide a novel technology capable of achieving high-quality SiC seed crystal, SiC ingot, SiC wafer and SiC wafer with an epitaxial film. The present invention, which solves the above object, is a method for producing a SiC seed crystal for growth of a SiC ingot, the method including a heat treatment step of heat-treating a SiC single crystal in an atmosphere containing Si element and C element. As described above, by heat-treating the SiC single crystal in an atmosphere containing the Si element and the C element, it is possible to produce a high-quality SiC seed crystal in which strain and crystal defects are suppressed.

The invention relates to the technical field of semiconductor material growth, and aims to solve the technical problems that the service life of a heating element is shortened due to single atmosphere sharing, the quality is difficult to guarantee due to many crystal defects, the single crystal production cost is high, and the production efficiency is low in the prior art. The invention discloses a single crystal growth device which is characterized by comprising a furnace body, a first chamber, a second chamber, a heating assembly, a growth assembly, an atmosphere isolation and heat conduction assembly, an atmosphere management system and a central control system, the atmosphere isolation and heat conduction assembly is used for separating the furnace body into a first cavity and a second cavity which are isolated in an airtight mode, and efficient heat transfer is achieved. By the adoption of the scheme, atmosphere structure separation and combined crucible design can be achieved, high quality and high purity of crystals are guaranteed, meanwhile, the service life of a heating element is effectively prolonged, and the operation cost is remarkably reduced.

The invention discloses a method for regulating and controlling the strength and plasticity of a FeMnCrCo-series high-entropy alloy based on pre-introduction of multi-dimensional crystallography defects, and relates to the technical field of high-entropy alloy materials. Cleaning in the vacuum induction furnace; performing vacuum melting; casting is conducted; carrying out homogenization treatment; forging treatment; carrying out six-pass hot rolling treatment; first-pass cold rolling treatment; first low-temperature annealing treatment; performing second-pass cold rolling treatment; carrying out secondary low-temperature annealing treatment; third-pass cold rolling treatment; and annealing treatment. Inter-pass annealing treatment is introduced into a cold rolling link of a traditional plate preparation process, and water-cooling quenching is assisted. According to the method, the multi-dimensional crystallographic defects generated in the cold rolling process are reserved in an initial microstructure of the alloy before a mechanical property test, the crystallographic defect type, density and spatial distribution in the initial microstructure of the alloy are regulated and controlled, a multi-dimensional defect strengthening mechanism is constructed, and good strength and plasticity matching of the alloy is achieved.

The invention discloses a Bridgman method growth gallium oxide single crystal abnormity detection method based on multi-mode perception, and relates to the technical field of single crystal preparation, and the method comprises the following steps: S1, collecting optical signals of a melt surface area in a Bridgman method growth gallium oxide single crystal process through a sensor array, synchronously acquiring temperature field data or infrared thermal image data of the region; the method comprises the following steps: acquiring an original spectral data set covering a local area according to a radiation signal under a micron-order spatial resolution, and obtaining initial radiation distribution information; according to the anomaly detection method for growing the gallium oxide single crystal by the Bridgman method based on multi-mode perception, dynamic tracking and accurate positioning of component anomaly in the growth process of the Bridgman method are realized, and an effective technical means is provided for improving the growth quality of the gallium oxide single crystal, reducing crystal defects and improving the process control capability.

The invention discloses a wafer detection method based on a Brillouin spectrum and related equipment, and relates to the technical field of wafer detection, and the wafer detection method based on the Brillouin spectrum comprises the following steps: obtaining an actually measured full width at half maximum and an actually measured frequency shift according to Brillouin spectrum information; and calculating lattice arrangement regularity according to the actually measured full width at half maximum, the actually measured frequency shift, the standard full width at half maximum and the standard frequency shift, wherein the lattice arrangement regularity is used for representing whether a crystal defect exists at the corresponding detection position point of the wafer. According to the wafer detection method based on the Brillouin spectrum, the problem that the existing wafer detection technology cannot realize lossless, rapid and accurate detection of the crystal defects of the wafer can be solved, and the crystal defects of the wafer can be detected losslessly, rapidly and accurately.

According to the topological defect cavity based on the valley photonic crystal and the multi-channel logic device comprising the topological defect cavity, an edge mode, protected by topology, in the topological photonic crystal can resist the influence of backscattering, and a brand new thought is provided for solving the problem of high reflection loss of a defect cavity-waveguide direct coupling system under non-resonant frequency. The topological defect cavity is designed based on the valley photonic crystal, and compared with a traditional photonic crystal defect cavity, low reflection loss can be achieved when the topological defect cavity is directly coupled with the waveguide. Besides, the resonant frequency and mode symmetry of the topological defect cavity have flexible tunability, and the multi-channel logic device based on the topological defect cavity and the harpoon type energy beam splitter is provided by utilizing the characteristics of low reflection loss and tunable resonant frequency of the topological defect cavity. According to the logic device, the output result of the harpoon beam splitter can be reserved, meanwhile, more diversified output results are achieved, and the important application value of the topological defect cavity in the integrated micro-nano photonics is reflected.

The present application discloses a method for preparing a multilayer VCSEL chip, the preparation method comprising: performing electron beam lithography on a single crystal silicon substrate to obtain a substrate having a predetermined nano-patterned structure; introducing an aminosilane gas source into the substrate surface to obtain a substrate covered with a monomolecular layer; sequentially depositing an aluminum oxide material and a silicon nitride material on the substrate covered with a monomolecular layer to obtain a photonic crystal layer with a high reflectivity; evaporating and condensing the semiconductor material onto the photonic crystal layer based on laser pulse technology to form a quantum well layer with a predetermined thickness; in a nitrogen environment, reorganizing the material atoms in the quantum well layer according to a predetermined lattice arrangement to obtain an optimized quantum well layer; depositing a metal electrode on the optimized quantum well layer to form an electrical contact layer to obtain a multilayer VCSEL chip. The present application improves the performance and production controllability of the VCSEL chip, solves the problems of crystal defects, surface roughness, and stress mismatch existing in the prior art, and has significant technical advantages.

The invention relates to high temperature superconducting qubits with disorder induced tunnel barriers. A superconducting qubit circuit and a method of forming a superconducting qubit are disclosed herein. A superconducting qubit circuit includes a superconducting qubit, where the superconducting qubit includes a tunnel junction in a superconducting material having a critical temperature above 1.2 K. The tunnel junction is formed from a disorder-induced tunnel barrier, where the disorder results from spatial crystal defects in the superconducting material.

The invention provides a calcium fluoride crystal defect detection system and method, and relates to the technical field of detection, and the method comprises the following steps: preprocessing a crystal to determine a reference position and environmental parameters, and then respectively carrying out optical uniformity detection and stress birefringence detection to obtain an interference fringe pattern and polarization state change data; and optical path difference data and stress field data are generated. And through spatial registration and data association analysis, extracting areas with both refractive index anomaly and stress anomaly as candidate defect areas, quantifying defect strength and stress influence range, and finally outputting a quality judgment result of the crystal defect. The method improves the defect detection precision and reliability, and is especially suitable for high-precision calcium fluoride crystal quality control.

The invention relates to the technical field of hydrogen storage alloys, in particular to an easy-to-activate Ti-Fe-RE-Mn-Zr-Zn-Sb-based hydrogen storage alloy and a preparation method thereof.The chemical formula of the alloy is Ti < 1.1 > Fe < 0.8 > Sm < 0.04-x > Nd < x > Mn < 0.35-y-z-m > ZryZnzSbm, x, y, z and m are atomic ratios, x is larger than or equal to 0.01 and smaller than or equal to 0.04, y is larger than or equal to 0.05 and smaller than or equal to 0.15, z is larger than or equal to 0.02 and smaller than or equal to 0.08, and m is larger than or equal to 0.01 and smaller than or equal to 0.05. According to the preparation method, an alloy ingot is obtained through induction heating and smelting in an argon atmosphere, the alloy ingot is mechanically crushed and then subjected to short-time mechanical ball milling, and alloy powder of a nanocrystalline structure is obtained. By adding a small amount of rare earth Sm and Nd and metals Mn, Zr, Zn and Sb, the hydrogen storage activation performance of the alloy is remarkably improved, and the rare earth elements easily form SmH3 and NdH3 when absorbing hydrogen for the first time to provide a catalytic activity center for activation of the alloy. Mn and Zr form an intermetallic compound ZrMn2, Zn and Sb form a SbZn phase, and the activation performance of the alloy is obviously improved on the premise that the hydrogen storage capacity is not obviously reduced. The grain size can be obviously reduced through short-time ball milling, the surface state of alloy particles is improved, the crystal defect density is greatly increased, and the alloy has very excellent activation performance.

The invention belongs to the technical field of crystal growth, and relates to a method and a system for regulating and controlling the crystal orientation in real time in a micron-sized single crystal growth process, which are used for realizing real-time microscopic monitoring on the crystal growth state by collecting inherent physical signals of a crystal growth interface area and generating original signal data. Extracting characteristic parameters associated with crystal orientation deviation from the original signal data, generating a crystal orientation deviation characteristic vector, inputting the crystal orientation deviation characteristic vector into a preset mapping model, generating a crystal orientation deviation quantitative index to calculate a local thermal field regulation and control instruction, the micro heat source array is driven to apply a local thermal field gradient to a target area of a crystal growth interface so as to guide the crystal orientation to return, so that global thermal stress fluctuation and new crystal defect hidden dangers caused by traditional large-range thermal field adjustment are avoided, flexible fine adjustment of the crystal orientation is realized, the internal quality and uniformity of crystal growth are greatly improved, and the crystal growth efficiency is improved. Therefore, the single crystal quality and the yield are obviously improved.

The invention discloses a quantitative channel contrast imaging method based on a scanning electron microscope, electronic equipment and a medium, and the method comprises the steps: putting a polycrystalline sample into a scanning electron microscope system, determining an ROI, and obtaining crystal data; adjusting the state of the polycrystalline sample to obtain a cross-correlation diagram of the back scattering electron image and the diffraction contrast value image, so that a back scattering electron beam scanning area is overlapped with the ROI; any position is selected in the ROI, and ECP under the current electron beam energy is calculated; determining a target orientation on the ECP, and determining an optimal path for rotating the polycrystalline sample to the target orientation; acquiring back scattering electron images before and after rotation, performing cross correlation, and moving the polycrystalline sample to enable back scattering electron beam scanning areas before and after rotation to coincide; the scanning electron microscope system is adjusted through the steps, and a series of back scattering electron images of the ROI are collected. According to the invention, the scanning electron microscope can characterize and analyze crystal defects such as dislocation, nano-twin crystal, stacking fault and the like of a block-shaped sample.

The invention provides a crystal defect detection and analysis method and system, and belongs to the technical field of crystal detection.The method comprises the steps that 1, crystals are heated and cooled, resistivity under different sintering conditions is obtained, and the concentration of defects is determined; 2, determining the influence of the attraction force and inhibition effect of the defect on the behavior of the carrier, determining the current response after the carrier is injected, and determining the type of the defect; 3, obtaining a light absorption process of the crystal, and determining migration kinetics of the defect according to transition time and relaxation time of photoelectrons; 4, creating a numerical model, predicting the defect behavior of the crystal according to temperature-dependent carrier transport, and obtaining the dynamic process of the defect; and 5, carrying out regression analysis on the concentration, the type, the migration kinetics and the kinetics process of the defect, and extracting characteristic parameters of the defect to realize defect detection analysis of the crystal. The problems that the crystal defect detection cost is high, the detection speed is low, the detection depth is limited, and the material performance is affected are solved.

The invention belongs to the technical field of crystal defect testing, and particularly relates to an FPD testing method for a monocrystalline silicon wafer micro-viewpoint defect, which comprises the following steps: accurately cutting off the head and the tail of a silicon rod to eliminate an end defect, and preparing a pure substrate by adopting an A-surface machine grinding / B-surface maintaining asymmetric treatment and segmented cleaning process; after pretreatment with a specifically proportioned corrosive liquid, carrying out temperature-controlled etching by using potassium dichromate-hydrofluoric acid to form a characteristic V-shaped pattern on the surface, and realizing visual identification by corresponding different defects to different patterns; gridding detection points are designed based on stress distribution, laser positioning coordinate mapping is performed, an imaging-correction-noise reduction-segmentation-intelligent classification algorithm chain is constructed to realize full-automatic detection, and a detection-analysis-optimization full-process data driving quality control system is established through visual data such as a thermodynamic diagram and a type matrix. And large-scale production of semiconductor silicon wafers is supported.

The invention relates to the technical field of inorganic material synthesis, in particular to a preparation method of a controlled-release magnesium hydroxide fertilizer. Comprising the steps of primary magnesium precipitation, hydrothermal treatment, secondary magnesium precipitation, anaerobic heat treatment and pulping. According to the method, firstly, crystal defects are eliminated through hydro-thermal treatment, crystal seeds with complete crystallinity are obtained, then the crystal seeds are added into a magnesium precipitation reaction system, the principle of Gibbs free energy minimization is followed, newly generated magnesium hydroxide tends to precipitate on the surfaces of the crystal seeds, under the interference effect of a crystal form regulator, the newly generated magnesium hydroxide crystal has many defects, and the magnesium precipitation effect is good. And then oxygen-free heat treatment is carried out, so that the defects of the magnesium hydroxide on the surface layer are further increased, and the initial dissolution and release capacity is improved. The controlled-release magnesium fertilizer which is high in early-stage release speed and long-acting in later-stage slow release is synthesized by utilizing a crystal defect engineering tool, and is different from a traditional coating scheme, and a brand new thought is provided for the design of the controlled-release fertilizer.

The application discloses a method for rapidly and nondestructively detecting the quality of silicon carbide crystals, which comprises the following steps: placing the silicon carbide crystals on a computer tomography (CT) carrier table, and rapidly and nondestructively detecting the typical defects in the silicon carbide crystals by means of computer tomography under specific parameters, image contrast and the identification of the topographic features, so as to directly obtain the defect topography, density distribution and the evolution of the defects with the growth process of the measured ingot at different sections, and significantly improve the visualization degree of the defects in the silicon carbide crystals.

The embodiment of the invention provides a silicon carbide crystal growth method and device and a silicon carbide crystal, relates to the technical field of silicon carbide crystal growth, and aims at solving the technical problem that in the prior art, due to the fact that gas phase flow cannot be dynamically adjusted, crystal defects are easily caused. The method comprises the steps that S1, seed crystals and silicon carbide powder are arranged in a crucible, and the crucible is connected with a gas phase flow adjusting assembly; s2, pumping air from the crucible, filling inert gas into the crucible, and heating the crucible to enable the silicon carbide crystals to enter a growth stage; and S3, in a crystal growth stage, controlling the opening degree of a gas-phase flow channel through a gas-phase flow adjusting assembly so as to adjust the flow of gas reaching the seed crystal until the growth of the silicon carbide crystal is finished. The method can effectively improve the crystal growth rate in the early and middle stages of crystal growth and avoid the carbon wrapping defect of the crystal in the later stage of crystal growth.

The invention discloses an AlScN thin film with a lattice matching buffer layer, the AlScN thin film is of a stacked structure formed by a substrate, an intermediate lattice matching buffer layer and a piezoelectric thin film surface layer, an intrinsic AlN thin film is grown on the substrate in situ to serve as the intermediate lattice matching buffer layer, and AlScN is deposited on the intermediate lattice matching buffer layer to serve as the piezoelectric thin film surface layer; an intrinsic AlN thin film is grown on a substrate in situ to serve as a lattice matching intermediate layer, then an AlScN thin film is prepared through magnetron sputtering double-target co-sputtering, the AlScN thin film of a laminated structure is formed, the crystal quality and lattice matching performance of the AlScN thin film can be remarkably improved, the matching performance is beneficial to reduction of crystal defects and reduction of the phase separation phenomenon in the thin film, and the performance of the AlScN thin film is improved. According to the preparation method, the structural integrity and stability of the material are enhanced, the prepared AlScN film is more compact, more uniform and high in quality, the physical and electrical properties of the material are remarkably improved, and meanwhile, the economic cost is saved.

The invention relates to the technical field of crystal materials, in particular to preparation and application of a low-defect Prussian blue analogue. The method comprises the following steps: preparing ZIF-8 by using a methanol solution of Zn (NO3) 2.6 H2O and 2-methylimidazole, pyrolyzing the ZIF-8 in an N2 environment, preparing a solid regulator NPC, mixing the NPC with a K3Fe (CN) 6 aqueous solution to obtain a suspension A, dissolving Zn (NO3) 2.6 H2O and K3C6H5O7 in deionized water to obtain a solution B, and dropwise adding the suspension A into the solution B to prepare the low-defect Prussian blue analogue. The material is large in crystal size, generates twin crystals at the same time, has good acid-base stability and thermal stability, has few crystal defects, high alkali metal K ion content and multiple ion exchange sites, has relatively large adsorption capacity and relatively high adsorption and removal rate on Rb < + > in a water body, and has good ion interference resistance.

The invention relates to an epitaxial growth temperature detection method, which comprises the following steps: providing a test wafer which comprises a calibration wafer and a temperature measurement wafer; performing defect treatment on the calibration wafer and the temperature measurement wafer so as to introduce crystal defects into the calibration wafer and the temperature measurement wafer; performing defect repair treatment on the calibration wafer at different target calibration temperatures, and obtaining defect repair information at corresponding temperatures; according to the target calibration temperature and the corresponding defect repair information, establishing a temperature measurement database used for representing the corresponding relation between the crystal state and the growth temperature; transferring the temperature measurement wafer into epitaxial equipment, and raising the temperature of the epitaxial equipment to an epitaxial temperature; obtaining crystal state information of the temperature measurement wafer at different positions; and obtaining the growth temperature corresponding to each crystal state based on the temperature measurement database and the crystal state information of the temperature measurement wafer. According to the epitaxial growth temperature detection method, temperature distribution in the epitaxial process can be effectively monitored and optimized, and the quality of a silicon carbide epitaxial film and the performance stability of a device are remarkably improved.

Disclosed in the present invention is a composite protective coating, comprising an AlCrYN layer, a CrAlNx layer and a CrN layer, which are sequentially arranged from top to bottom, wherein in the AlCrYN layer, the atomic percent content of each element is as follows: N: 30-50%, Al: 25-40%, Cr: 20-30%, and Y: 0.2-7%; the AlCrYN layer is of a face-centered cubic structure and has a (200) preferred orientation; the texture coefficient (TC) is 0.5-0.7; the grain size is 20-180 nm; and a Y solid solution is formed in an AlCrN crystal lattice. Further provided in the present invention is a preparation method for the composite protective coating. Compared with the prior art, the AlCrYN coating prepared by means of a technique used in the present invention has good uniformity, crystal grains in the coating are fine, and there are few crystal defects; and the coating has a good friction coefficient and hydrophobicity, and is reduced in terms of adhesion with molten aluminum. In the present invention, the thickness of the coating can be controlled by controlling the coating time. The present invention is simple and efficient, saves on materials and conforms to the environmental protection concept of sustainable development. The coating has the potential of being applied to the field of molten aluminum contact on a large scale, and can produce huge social and economic benefits.

The invention discloses a crystal defect type identification method and device, electronic equipment and a storage medium, and belongs to the technical field of crystal structure analysis, and the method comprises the steps: obtaining a defect transmission microscopic image of a dolomite crystal; adding a defect type label for the defect transmission microscopic image according to the mapping relation between the defect type and the spatial dimension and imaging characteristics of the transmission microscopic image, and generating a label defect microscopic image; performing image pre-enhancement on the label defect microscopic image to generate a label defect training set; constructing an initial RetinaNet model, and performing iterative training on the initial RetinaNet model by taking the defect microscopic image as input and the defect type as output to generate a target crystal defect type identification model; and according to the transmission microscopic image of the to-be-detected crystal, identifying the type of the defect of the to-be-detected crystal. The technical problem that the defects and defect types of the dolomite crystals cannot be accurately positioned and identified in the prior art can be solved.

The invention discloses a wide-temperature-range perovskite optical storage material and a preparation method and application thereof, the chemical general formula of the wide-temperature-range perovskite optical storage material is CsCdCl3: xSb < 3 + >, yMn < + >, Mn < + > is Zr < 4 + >, Sn < 2 + >, Hf < 4 + > or Gd < 3 + >, x is more than 0 and less than 0.06, and y is more than 0 and less than 0.02. The perovskite crystal can generate free carriers under excitation of X-rays or 365-nanometer ultraviolet light, the carriers can be stored in a crystal defect trap, and the storage temperature of the carriers covers an ultra-wide temperature range from 100 K to 350 K, so that wide-temperature-range X-ray imaging, information storage and anti-counterfeiting application can be realized.

An evaluation device includes an X-ray diffraction measuring device configured to acquire a first X-ray locking curve having a first main peak and a first sub-peak partially overlapping the first main peak by measuring an X-ray locking curve of a first portion of a sample having a crystalline material. The evaluation device includes an analysis device configured to separate the first sub-peak from the first main peak, perform first evaluation of a crystal defects or distortion of the sample based on a peak position, peak intensity, or a half width of the separated first sub-peak, and output the first evaluation.