4815 results about "Grain boundary" patented technology

A method for forming a polysilicon FinFET (10) or other thin film transistor structure includes forming an insulative layer (12) over a semiconductor substrate (14). An amorphous silicon layer (32) forms over the insulative layer (12). A silicon germanium seed layer (44) forms in association with the amorphous silicon layer (32) for controlling silicon grain growth. The polysilicon layer arises from annealing the amorphous silicon layer (32). During the annealing step, silicon germanium seed layer (44), together with silicon germanium layer (34), catalyzes silicon recrystallization to promote growing larger crystalline grains, as well as fewer grain boundaries within the resulting polysilicon layer. Source (16), drain (18), and channel (20) regions are formed within the polysilicon layer. A double-gated region (24) forms in association with source (16), drain (18), and channel (20) to produce polysilicon FinFET (10).

A faceted structure is provided that includes a crystalline composition comprising a metal nitride. The metal comprises one or more of aluminum, boron, indium, or gallium. The crystalline composition has at least one exposed surface that is a grain boundary, an etched surface, or a naturally formed facet, and the surface has the same crystallographic orientation of a substrate on which the crystalline composition is grown. A sensor device is provided that includes a faceted structure. Associated methods of making and using the faceted structure in a sensor device are provided.

Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homogenized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beam let corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.

A CF8C type stainless steel alloy and articles formed therefrom containing about 18.0 weight percent to about 22.0 weight percent chromium and 11.0 weight percent to about 14.0 weight percent nickel; from about 0.05 weight percent to about 0.15 weight percent carbon; from about 2.0 weight percent to about 10.0 weight percent manganese; and from about 0.3 weight percent to about 1.5 weight percent niobium. The present alloys further include less than 0.15 weight percent sulfur which provides high temperature strength both in the matrix and at the grain boundaries without reducing ductility due to cracking along boundaries with continuous or nearly-continuous carbides. The disclosed alloys also have increased nitrogen solubility thereby enhancing strength at all temperatures because nitride precipitates or nitrogen porosity during casting are not observed. The solubility of nitrogen is dramatically enhanced by the presence of manganese, which also retains or improves the solubility of carbon thereby providing additional solid solution strengthening due to the presence of manganese and nitrogen, and combined carbon.

Defects at the grain boundaries of a crystal silicon film, which has been crystallized from an amorphous silicon film, are passivated without using a hydrogen plasma treatment. An underlying film and a crystal silicon film which has been crystallized from an amorphous silicon film are formed on a glass substrate. A thermal oxide film is grown on the surface of the crystal silicon film by heating in an oxygen atmosphere into which NF3 gas has been added. As the thermal oxide film is grown, non-coupled Si is generated. The defects at the grain boundaries of the crystal silicon film are passivated by the additional Si. Then, the thermal oxide film is removed and the crystal silicon film is patterned into an island shape to form an active layer of a TFT. A gate insulating film, a gate electrode and the like are then formed sequentially to complete the TFT.

An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Stripe shape or rectangular shape unevenness or opening is formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave oscillation laser light may also be used.

The present invention is related to a thin film semiconductor which can be regarded as substantially a single crystal and a semiconductor device comprising an active layer formed by the thin film semiconductor. At least a concave or convex pattern is formed intentionally on a insulating film provided in contact with the lower surface of an amorphous silicon film, whereby at least a site is formed in which a metal element for accelerating crystallization can be segregated. Therefore, a crystal nuclei is selectively formed in a portion where the concave or convex pattern is located, which carries out controlling a crystal diameter. Thus, a crystalline silicon film is obtained. A crystallinity of the crystalline silicon film is improved by the irradiation of a laser light or an intense light having an energy equivalent to that of the laser light, whereby a monodomain region in which no grain boundary substantially exit is formed.

[Object] To provide a high-performance rare earth-based magnet exhibiting a high coercive force or a high residual magnetic flux density even when the content of a rare earth element such as Dy or the like which is scarce is reduced.

[Construction] A rare earth-iron-boron based magnet includes a crystal grain boundary layer enriched in element M (M is at least one rare earth element selected from Pr, Dy, Tb, and Ho) by diffusion of the element M from the surface of the magnet, wherein the relation between the coercive force H_cj and the content of the element M in the whole of the magnet is represented by the following expression: H_cj≧1+0.2×M (wherein 0.05≦M≦10) wherein H_cj is the coercive force (unit: MA/m), and M is the content of the element M in the whole of the magnet (% by mass). Furthermore, the magnet satisfies the following expression: Br≧1.68−0.17×H_cj wherein Br is the residual magnetic flux density (unit: T).

A unitary graphene-based integrated heat sink comprising a heat collection member (base) and at least one heat dissipation member (e.g. fins) integral to the baser, wherein the base is configured to be in thermal contact with a heat source, collects heat therefrom, and dissipates heat through the fins. The unitary graphene material is obtained from heat-treating a graphene oxide gel at a temperature higher than 100° C., 500° C., 1,250° C., or 2,000° C., and contains chemically bonded graphene molecules having inter-graphene distance of 0.3354-0.4 nm (preferably <0.337 nm). The unitary graphene material is a graphene single crystal, a poly-crystal with incomplete grain boundaries, or a poly-crystal having large grain sizes (e.g. >mm or cm), exhibiting a degree of graphitization preferably from 1% to 100% and a Mosaic spread value less than 0.7 (preferably no greater than 0.4). The finned heat sink may also be made from a filler-reinforced graphene matrix composite.

The invention discloses a sintered Nd-Fe-B magnet with high corrosion resistance and the grain boundary reconstruction and a preparation method thereof. The composition of the invention is that: NdeFe100-e-f-gBfMg, wherein, e is greater than or equal to 6 and equal to or less than 24, f is greater than or equal to 5. 6 and equal to or less than 7, g is greater than or equal to 0.03 and equal to or less than 8, M is one or some of elements Dy, Tb, Pr, Sm, Yb, La, Co, Ni, Cr, Nb, Ta, Zr, Si, Ti, Mo, W, V, Ca, Mg, Cu, Al, Zn, Ga, Bi, Sn and In; The method is that: main phrase alloy and reconstructed grain boundary phase alloy are respectively pulverized and mixed uniformly; the powder mixture is pressed to a mould in the magnetic field, and fabricated into a sintering magnet in a high vacuum sintering furnace. By the reconstruction of the grain boundary phase composition, the invention can obtain the grain boundary phase alloy with low melting point and high electrode potential, decrease the potential difference between the main phase and the grain boundary phase on the basis of ensuring the magnetic properties, promote the intrinsic corrosion resistance of magnet, and has the advantages of simple process, low cost and being suitable for the batch production. Therefore, by combining the grain boundary reconstruction and double alloy method, the sintered Nd-Fe-B magnet with high intrinsic corrosion resistance can be prepared.

An object of the present invention is to provide a perpendicular magnetic recording medium in which each space between crystal grains of a first magnetic recording layer is so designed as to allow the layer to also have a function as a continuous layer, and a method of manufacturing a perpendicular magnetic recording medium. In a perpendicular magnetic recording medium 100 according to the present invention, a first magnetic recording layer 122a and a second magnetic recording layer 122b are ferromagnetic layers each having a granular structure in which a grain boundary part made of a non-magnetic substance is formed between crystal grains each grown in a column shape and, in the first magnetic recording layer 122a, an intergranular distance defined by an average of shortest distances between grain boundary parts each between a crystal grain and its adjacent crystal grain is equal to or shorter than 1 nm.

This disclosure provides embodiments for the formation of vertical memory cell structures that may be implemented in RRAM devices. In one embodiment, memory cell area may be increased by varying word line height and/or word line interface surface characteristics to ensure the creation of a grain boundary that is suitable for formation of conductive pathways through an active layer of an RRAM memory cell. This may maintain continuum behavior while reducing random cell-to-cell variability that is often encountered at nanoscopic scales. In another embodiment, such vertical memory cell structures may be formed in multiple-tiers to define a three-dimensional RRAM memory array. Further embodiments also provide a spacer pitch-doubled RRAM memory array that integrates vertical memory cell structures.

To provide a perpendicular magnetic recording disk having a film structure that improves overwrite characteristics (O/W) while maintaining a coercive force (Hc) high enough not to affect heat fluctuation resistance, and a manufacturing method thereof.

A magnetic disk for use in perpendicular magnetic recording, having at least an underlayer, a first magnetic recording layer, and a second magnetic recording layer on a substrate in the order named, characterized in that the first magnetic recording layer and the second magnetic recording layer are each a ferromagnetic layer of a granular structure containing a nonmagnetic substance forming grain boundary portions between crystal grains containing at least Co (cobalt) and, given that the content of the nonmagnetic substance in the first magnetic recording layer is A mol % and the content of the nonmagnetic substance in the second magnetic recording layer is B mol %, A<B.

Disclosed is a method of preparing a micro-structured powder for bonded magnets having high coercivity, which is advantageous in terms of low preparation costs by recycling magnet scraps, simplified mass production, minimal environmental contamination by such a recycling process, and the preparation of stable anisotropic powders having high coercivity. Further, a magnet powder prepared by the above method is provided. The current method is characterized in that R—Fe—B type anisotropic sintered magnets or scraps thereof are crushed to prepare 50-500 μm sized magnet powders, which are then mixed with 1-10 wt % of rare earth fluoride (RF₃) powders and thermally treated at high temperatures (500-1100° C.) in a vacuum or an inert gas, to cause the change of matrix-near surface and grain boundary of the powders. Thus obtained powders include a matrix phase having R₂Fe₁₄B crystal structure, a R-rich grain boundary phase containing rare earth fluoride, and other phases, in which the matrix phase has an average grain size of 1-20 μm, and the powders have an average size of 50-500 μm with superior magnetic characteristics of (BH)max≧20 MGOe and iHc≧5 kOe.

An object of the present invention is to provide a perpendicular magnetic recording medium the SNR of which is improved by reducing noise thought to be due to an auxiliary recording layer so that a higher recording density can be achieved, and a method of manufacturing the same.

In order to achieve the above object, a representative configuration of a perpendicular magnetic recording medium 100 according to the present invention includes, on a base, at least a magnetic recording layer 122 having a granular structure in which a non-magnetic grain boundary portion is formed between crystal particles grown in a columnar shape; a non-magnetic split layer 124 disposed on the magnetic recording layer 122 and containing Ru and oxygen; and an auxiliary recording layer 126 that is disposed on the split layer 124 and that is magnetically approximately continuous in an in-plane direction of a main surface of the base 110.

An object of the present invention is to provide a perpendicular magnetic recording medium the SNR of which is further improved while a high coercive force Hc is secured so that a higher recoding density can be achieved.

The structure of a perpendicular magnetic recording medium 100 according to the present invention includes, on a base, at least a first magnetic recording layer 122a having a granular structure in which a non-magnetic grain boundary portion is formed between crystal particles grown in a columnar shape; a non-magnetic split layer 122b containing Ru disposed on the first magnetic layer; and a second magnetic recording layer 122c that is disposed on the split layer and that has a granular structure in which a non-magnetic grain boundary portion is formed between crystal particles grown in a columnar shape, wherein the first magnetic layer and the second magnetic layer contain oxides that form the grain boundary, and when an oxide content of the first magnetic layer is represented by A and an oxide content of the second magnetic layer is represented by B, a relationship between the oxide contents A/B is in the range of 0.5<A/B<1.0.

A superconducting structure that can operate, for example, as a qubit or a superconducting switch is presented. The structure includes a loop formed from two parts. A first part includes two superconducting materials separated by a junction. The junction can, for example, be a 45° grain boundary junction. The second part can couple the two superconducting materials across the junction. The second part includes a superconducting material coupled to each of the two superconducting materials of the first part through c-axis junctions. Further embodiments of the invention can be as a coherent unconventional superconducting switch, or a variable phase shift unconventional superconductor junction device.

[Object] To achieve a high coercive force (Hc) and low-noise characteristics (high S/N ratio) through realization of both segregation of SiO₂ and high perpendicular magnetic anisotropy by providing a two-layer structure having magnetic recording layers with different properties.

[Solution] A magnetic disk for use in perpendicular magnetic recording, having at least an underlayer 5, a first magnetic recording layer 6, and a second magnetic recording layer 7 on a substrate in this order. The first magnetic recording layer 6 and the second magnetic recording layer 7 are each a ferromagnetic layer of a granular structure containing a nonmagnetic substance forming grain boundary portions between crystal grains containing at least Co (cobalt). Given that the content of the nonmagnetic substance in the first magnetic recording layer 6 is A mol % and the content of the nonmagnetic substance in the second magnetic recording layer 7 is B mol %, A>B.

This invention discloses a method for increasing sintered Nd FeB coercive force by adding nm oxide in grain-boundary phase including the following steps: 1,applying casting technology to produce NdFeB ingot alloy or applying rapid hardening film technology to produce NdFeB rapid hardening film of with host phase alloy, applying casting technology to produce ingot alloy or rapid hardening film technology to get rapid hardening film or rapid quench technology to manufacture a rapid quench strip with the grain boundary phase alloy, 2, processing powder with the two alloys, 3, adding a nm oxide to the grain boundary phase alloy powder, 4, pressing the mixed powder into formation, 5, producing sintered magnetic body in a vacuum sintering oven.

The light-emitting element has a problem that reliability, heat-resisting stability and durability are low because of the deterioration in an organic compound layer. The TFT for driving the light-emitting element has a problem that variation readily occurs in its electrical characteristic due to the defects existing in grain boundaries. The present invention provides a light-emitting device by using the fact that, by applying to the light-emitting element a drive voltage having a polarity reverse to that in light emission during each constant period, the light-emitting element is improved in current-voltage characteristic. Furthermore, the present invention provides a light-emitting device made not dependent upon transistor characteristic, by controlling the amount of a current flowing through the light-emitting element.

A technology is provided which allows a reduction in the size of a semiconductor device without degrading an electromagnetic shielding effect and reliability against reflow heating. After a plurality of components are mounted over a component mounting surface of a module substrate, a resin is formed so as to cover the mounted components. Further, over surfaces (upper and side surfaces) of the resin, a shield layer including a laminated film of a Cu plating film and an Ni plating film is formed. In the shield layer, a plurality of microchannel cracks are formed randomly along grain boundaries and in a net-like configuration without being coupled to each other in a straight line, and form a plurality of paths extending from the resin to a surface of the shield layer by the microchannel cracks.