133results about "Magnetic recording" patented technology

Various apparatuses, systems, methods, and media are disclosed for heat-assisted magnetic recording (HAMR) that includes a HAMR medium with a seed-thermal barrier structure. The seed-thermal barrier structure is positioned between a heat sink layer and a magnetic recording layer. In some examples, the seed-thermal barrier structure has a first layer including MgOTiO (MTO), a second layer including TiN on the first layer, a third layer on the second layer, and a fourth layer including MTO on the third layer. The third layer, in some examples, includes at least one of: RuAl, Pt, PtZr, PtTa, Rh, FePt, CrMo, or Cr.

Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction of a surface of the dielectric thin film.

A SOT device includes a bismuth antimony dopant element (BiSbE) alloy layer over a substrate. The BiSbE alloy layer is used as a topological insulator. The BiSbE alloy layer includes bismuth, antimony, AND a dopant element. The dopant element is a non-metallic dopant element, a metallic dopant element, and combinations thereof. Examples of metallic dopant elements include Ni, Co, Fe, CoFe, NiFe, NiCo, NiCu, CoCu, NiAg, CuAg, Cu, Al, Zn, Ag, Ga, In, or combinations thereof. Examples of non-metallic dopant elements include Si, P, Ge, or combinations thereof. The BiSbE alloy layer can include a plurality of BiSb lamellae layers and one or more dopant element lamellae layers. The BiSbE alloy layer has a (012) orientation.

A voice coil motor (VCM) in a hard disk drive is operated in a discontinuous mode with an alternation of on and off times. A drive current to the VCM is facilitated and countered with a variable voltage across the during the on-times and off-times. The intensity of the drive current is controlled as a function of a Back ElectroMotive Force (BEMF) of the VCM. A method includes sampling during the alternation of on-times and off-times first and second values of the voltage across the VCM. The first value is sampled at a first time in response to the end of the off-time. The second value is sampled at a second time in response to the drive current of the VCM zeroing following the supply of drive current to the VCM being countered during the off-time. The BEMF is calculated as a function of first and second values.

Provided are arrangements of optical elements that combine the features of a high power, compact laser that exhibits narrow linewidth output and that does not appreciably shift in wavelength or vary in power over a wide range of temperatures. Such arrangements include a transmission filter and a Bragg reflector that select out the wavelength for which the output power of a reflective semiconductor optical amplifier (RSOA) is least affected by changes in temperature over a temperature range of interest. Such arrangements may also utilize temperature-insensitive materials.

A management system for a hard drive dismantling system automatically monitors the operation and the output of the dismantling system either remotely or onsite. In one embodiment, the number of hard drives processed by the system is determined and a contract value is determined in real-time. A distributed ledger is employed. Payments are automatically transferred between a customer and a service provider according to a contractual arrangement. The market values of various components, such as rare earth materials, are also optionally provided.

The present disclosure generally relates to topological semi-metal (TSM) based spin-orbit torque (SOT) devices, and methods of forming a TSM layer. The TSM layer of the SOT device comprises YPtBi having a 1:1:1 stoichiometry. The YPtBi has a density between about 9.7 g / cc to about 11.2 g / cc. Kr, Ar, or Xe gas is used to sputter the YPtBi to form the YPtBi layer or film. Trace amounts of Kr, Ar, or Xe are detectable in the YPtBi layer, where the YPtBi layer comprises about 1% of Kr, Ar, or Xe. One or more targets comprising YPtBi; YPt and Bi; PtBi and Y; Y, Pt, and Bi; or YBi and Pt can be used when forming the YPtBi layer. In embodiments where two targets are used to form the YPtBi layer, different amounts of power may be applied to each target.

Various apparatuses, systems, methods, and media are disclosed for heat-assisted magnetic recording (HAMR) that includes a HAMR medium with a seed-thermal barrier structure. The seed-thermal barrier structure is positioned between a heat sink layer and a magnetic recording layer. In some examples, the seed-thermal barrier structure has a first layer including MgOTiO (MTO), a second layer including TiN on the first layer, a third layer on the second layer, and a fourth layer including MTO on the third layer. The third layer, in some examples, includes at least one of: RuAl, Pt, PtZr, PtTa, Rh, FePt, CrMo, or Cr.

Various devices, apparatuses, methods, and media for heat assisted magnetic recording (HAMR) are disclosed that, in some examples, provide HAMR media with a platinum doped CO-BN capping layer. In one example, the HAMR medium includes a CoPtBN capping layer on a magnetic recording layer having Pt in a range of 5 atomic percent (at.%) to 12 at.%. The atomic ratio of Co to Pt in the CoPtBN may be in the range of, for example, 5 to 13. The BN in the CoPtBN may comprise, for example, from 22 mol% to 30 mol% of the CoPtBN. The CoPtBN may have a face-centered cubic (FCC) crystal structure. The HAMR media may have various other layers, such as a substrate, a heat sink layer on the substrate, and a seed layer on the heat sink layer, with the magnetic recording layer on the seed layer. The seed layer may include MgO or MgO-TiO. An amorphous soft underlayer (SUL) may be provided.

Provided is a storage case and a package that reduce wear of a support surface compared to a structure that supports side surfaces of a plurality of tape cartridges with the entire support surface of the side surfaces. The storage case includes a support surface that supports side surfaces of a plurality of tape cartridges, and the support surface includes a first surface and a second surface that is located on a side closer to the side surfaces than the first surface.

To reduce an area of a circuit for detecting counter-electromotive force.SOLUTION: A current detection circuit 212 generates a current detection signal VCS depending on a drive current of a linear motor 102 to be driven. A first amplifier AMP1 amplifies the current detection signal VCS. A second amplifier AMP2 multiplies a both-end voltage VM of the linear motor 102 by a gain less than 1, and outputs the resultant. A third amplifier AMP3 generates a counter-electromotive force detection signal VBEMF depending on a difference between output VA1 of the first amplifier AMP1 and output VA2 of the second amplifier AMP2.SELECTED DRAWING: Figure 1

To provide a magnetic tape cartridge, a cartridge management system, a reading method, and a program enabling accurately reading an identifier.SOLUTION: A magnetic tape cartridge includes a case on which an identifier is displayed, and a storage medium in which reading condition information that is information regarding a condition for reading the identifier is stored.SELECTED DRAWING: Figure 8

The present disclosure relates generally to spintronic material stacks and devices. Various disclosed embodiments of YBiPt-based spin-orbit torque (SOT) stacks can be used for high-temperature applications. Disclosed herein are various buffer and / or intermediate layer configurations in spintronic stacks that can promote the growth of YBiPt in the (110) orientation to promote a high spin-Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack including a buffer layer including one or more layers each individually including MgO(100), TiN(100), Ta, Nb, HfN, Ta3W2(110), TaW2(100), Ta3W2N, TaW2N, or YBiPt; an SOT layer including YBiPt with a (110) orientation; an intermediate layer including one or more of MgO, Ta3WN, TaW3N, Ta3W(110), TaW3(100), YPt(110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN; and a ferromagnetic layer.

The present disclosure generally relates to topological semi-metal (TSM) and topological insulator (Tl) based spin-orbit torque (SOT) devices and a method of forming thereof. Tl or TSM-based SOT device (such as that with BiSb in the SOT layer) has been proposed for applications in magnetic switching and sensor applications, where current flows in a CIP (current-in-plane) or CPP (current-perpendicular-to-the-plane) direction, respectively. For CPP SOT devices, the requirement for the Tl or TSM layer's bulk property is to be more insulating, to minimize shunting. However, for CIP SOT devices, the requirement for the Tl or TSM layer's bulk property is to be more conductive, for less power consumption. Disclosed herein are various embodiments covering types and amounts of dopants for the Tl or TSM layer, to decrease the bandgap of the Tl or TSM layer for CIP SOT devices, thereby increasing the bulk conductivity for lower power consumption.

To provide a magnetoresistance effect element with a large MR ratio.SOLUTION: A magnetoresistance effect element comprises a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is arranged closer to the non-magnetic layer than the second layer. The first layer contains a heusler alloy which is at least partially crystallized. The second layer includes a ferromagnetic body which is at least partially crystallized, unlike the heusler alloy. The first layer and the second layer include a first atom added. The first atom is one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.SELECTED DRAWING: Figure 1

Provided is a disk device, a control method for a disk device, and a program, which enable a rotational latency to be minimized to access a next logical block address (LBA) regardless of which head is used for access in a disk device having a plurality of heads. The disk device of an embodiment includes a storage unit that stores a table in which a track skew value for each head is stored, and a control unit that reads out a track skew value corresponding to a head that is an object of operation from the table and performs track control.

A hard disk drive includes a heat-assisted magnetic recording head and an enclosure. The enclosure is configured to contain the heat-assisted magnetic recording head and other components of the hard disk drive. The enclosure includes a base and a thermally processed top cover including a thermally oxidized interior surface. Preferably, a composition of the thermally oxidized surface of the thermally processed top cover comprises at least 5 percent oxygen. More preferably, an average oxidation depth of the thermally oxidized surface of the thermally processed top cover is at least 8 nanometers.

To provide a non-alkali glass substrate in which bubbles contained in molten glass can easily be removed under a reduced pressure atmosphere.SOLUTION: A non-alkali glass substrate, which is a non-alkali glass substrate containing, in representation of oxide-based mass%, SiO2: 54 to 68%, Al2O3: 10 to 25%, B2O3: 0.1 to 5.5%, MgO+CaO+SrO+BaO: 8 to 26%, and in which, characterized, β-OH is 0.15 to 0.35 mm-1, Cl content is 0.15 to 0.3 mass%, and the bubble growth index I represented by the following formula (1) is 320 or more. I=590.5×[β-OH]+874.1×[Cl]-5.7×[B2O3]-33.3 (1). Here, in formula (1), [β-OH] indicates β-OH (mm-1) of the non-alkali glass substrate, [Cl] indicates the Cl content (mass%) of the non-alkali glass substrate, and [B2O3] indicates the B2O3 content (mass%) of the non-alkali glass substrate.SELECTED DRAWING: None

This disclosure generally relates to the design of a spin-orbit torque (SOT) differential reader. The SOT differential reader is a multi-terminal device comprising a first shield, a first spin Hall layer, a first free layer, a gap layer, a second spin Hall layer, a second free layer, and a second shield. The gap layer serves as an electrode and is disposed between the first and second spin Hall layers. Electrical lead connections are located around the first spin Hall layer, the second spin Hall layer, the gap layer, the first shield, and / or the second shield. These lead connections facilitate the flow of current from the negative lead to the positive lead and / or the voltage from the negative lead to the positive lead. The positioning of these lead connections and the positioning of the SOT differential layers improve the reader resolution without reducing the shield-to-shield spacing (i.e., the read gap).

To provide a cartridge management device, a cartridge management system, an operation method of the cartridge management device, and a program that can inhibit unauthorized reuse of a magnetic tape cartridge.SOLUTION: When no registered information indicating that a cartridge has been registered in a cartridge management system is stored in a cartridge memory provided in the cartridge, a library controller equipped with a storage performs first registration processing for registering the identification information identifying the cartridge and the registered information in the cartridge memory, overwrite prohibition processing for prohibiting overwriting the identification information and the registered information registered in the cartridge memory, second registration processing for registering the identification information in the storage, and execution processing to read and write user data to and from the cartridge when the identification information stored in the storage and the identification information stored in the cartridge memory match.SELECTED DRAWING: Figure 11

A spin-orbit torque type magnetoresistance effect element including a magnetoresistance effect element having a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the magnetoresistance effect element and that is joined to the second ferromagnetic metal layer; wherein the magnetization of the second ferromagnetic metal layer is oriented in the stacking direction of the magnetoresistance effect element; and the second ferromagnetic metal layer has shape anisotropy, such that a length along the first direction is greater than a length along a second direction orthogonal to the first direction and to the stacking direction.

Provided are an insulating-coated soft magnetic powder capable of being heat-treated at high temperatures and having a low coercive force and a high insulation resistance value between particles, a compacted magnetic core, a magnetic component, an electronic device, and a moving body. The insulating-coated soft magnetic powder is characterized by having: a core particle having a base portion and an oxide film, the base portion containing a soft magnetic material mainly composed of Fe and containing at least one of Si, Cr, and Al, the oxide film being provided on the surface of the base portion and containing an oxide of at least one of Si, Cr, and Al; and an insulating coating film provided on the surface of the core particle and containing a ceramic, the thickness of the insulating coating film being 5 nm or more and 300 nm or less, and at the interface between the oxide film and the insulating coating film, mutual diffusion occurs between the oxide contained in the oxide film and the ceramic contained in the insulating coating film.

A hard disk drive includes multiple disk media mounted on a spindle, where the outer diameter of each disk medium is offset from the inner diameter of the disk medium in a same direction along an axis of rotation of the spindle, and a load / unload ramp positioned, based on the offset, to align in correspondence with the outer diameters of the disk media. Thus, the curvature of irregular disk media, such as that associated with thinner and thinner disks, is mitigated by grouping similarly-characterized irregular disks together on a given spindle and compensating the ramp accordingly.

A magnetic recording medium is described that includes a substrate and an amorphous soft underlayer (SUL). A Ni-Pt seed layer is formed on the SUL in which Pt atoms have substituted at least some of the Ni atoms within the Ni lattice structure of Ni-Pt to form a solid solution of Ni-Pt. In some examples, the Ni-Pt seed layer is formed from Ni40Pt60. A Ru intermediate layer is formed on the seed layer. In some examples, the lattice mismatch of the Ni-Pt seed layer and the Ru intermediate layer is 0.4% or less. A magnetic recording layer is formed on the Ru intermediate layer. Additional layers or films may be provided. The media may be configured for use with perpendicular magnetic recording (PMR). A data storage device is described that includes the magnetic recording medium. Methods for manufacturing the magnetic recording media are also described herein.

To improve accuracy of current detection.SOLUTION: An A / D converter converts an error signal VERR based on an error between a current feedback signal VFB and a reference signal VDAC into a digital signal DERR at the timing of an S / H signal. In a first mode, a compensator uses a value A1 of the error signal captured by the A / D converter at the timing of a negative edge of a first pulse PWMA as a value A1' of the error signal at the timing of a positive edge of a second pulse PWMB.SELECTED DRAWING: Figure 4

The embodiment provides a magnetic disk device capable of detecting contact between a slider and a magnetic disk. The magnetic disk device of the embodiment comprises: a plurality of magnetic disks; a plurality of sliders including resistance elements disposed so as to be exposed to the recording surfaces of the magnetic disks and disposed corresponding to the plurality of magnetic disks; and a control unit that detects changes in resistance values ​​of the resistance elements disposed on the plurality of sliders.

The invention discloses magnetic tape unit equipment, a storage system, a control method of a magnetic head and a controller, and relates to the technical field of magnetic tapes. A plurality of magnetic heads are arranged in the magnetic tape unit. Therefore, by providing the redundant magnetic head, the service life of the magnetic head in the magnetic tape unit equipment can be prolonged, and the service life of the magnetic tape unit equipment is further prolonged. And in the magnetic head cleaning treatment process, the first magnetic head or the second magnetic head in the multiple magnetic heads is driven by the magnetic head driver to access the magnetic tape, so that the data access function can still be provided in the magnetic tape unit equipment, and the data access service does not need to be interrupted.

A SOT device includes a bismuth antimony dopant element (BiSbE) alloy layer over a substrate. The BiSbE alloy layer is used as a topological insulator. The BiSbE alloy layer includes bismuth, antimony, AND a dopant element. The dopant element is a non-metallic dopant element, a metallic dopant element, and combinations thereof. Examples of metallic dopant elements include Ni, Co, Fe, CoFe, NiFe, NiCo, NiCu, CoCu, NiAg, CuAg, Cu, Al, Zn, Ag, Ga, In, or combinations thereof. Examples of non-metallic dopant elements include Si, P, Ge, or combinations thereof. The BiSbE alloy layer can include a plurality of BiSb lamellae layers and one or more dopant element lamellae layers. The BiSbE alloy layer has a (012) orientation.

To provide an alkali-free glass substrate that enables easy removal of bubbles included in molten glass under a reduced-pressure atmosphere.SOLUTION: An alkali-free glass substrate contains, as represented by mass% based on oxides: SiO2: 54-68%, Al2O3: 10-25%, B2O3: 1.8-5.5%, and MgO+CaO+SrO+BaO: 8-26%. The alkali-free glass substrate has β-OH of 0.15 to 0.32 mm-1, and a Cl content of 0.15 to 0.25 mass%. A bubble growth index I of the alkali-free glass substrate given by the following formula is 320 or more: I=590.5×[β-OH]+874.1×[Cl]-5.7×[B2O3]-33.3. In the formula, [β-OH] is β-OH (mm-1) of the alkali-free glass substrate, [Cl] is the Cl content (mass%) of the alkali-free glass substrate, and [B2O3] is a B2O3 content (mass%) of the alkali-free glass substrate.SELECTED DRAWING: None