The present disclosure relates generally to spintronic material stacks and devices. Various disclosed embodiments of YBiPt-based spin-
orbit torque (SOT) stacks can be used for high-temperature applications. Disclosed herein are various buffer and / or intermediate layer configurations in spintronic stacks that can promote the growth of YBiPt in the (110) orientation to promote a high spin-Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack including a buffer layer including one or more
layers each individually including MgO(100),
TiN(100), Ta, Nb, HfN, Ta3W2(110), TaW2(100), Ta3W2N, TaW2N, or YBiPt; an SOT layer including YBiPt with a (110) orientation; an intermediate layer including one or more of MgO, Ta3WN, TaW3N, Ta3W(110), TaW3(100), YPt(110), NiFeGeN, NiAlN,
NiAl, NiFeGe, NiAlGe, or HfN; and a ferromagnetic layer.