204 results about "Surface etching" patented technology

The invention discloses wafer slice etching equipment and a wafer slice etching method, and relates to the technical field of wafer etching. The device comprises an etching machine table and a machine base, the machine base is fixedly arranged on the lower surface of the etching machine table, an equipment cover is arranged on the upper surface of the etching machine table, and an electric sliding rail is fixedly arranged on the upper surface of the etching machine table; according to the wafer cleaning device, the device cover is driven to move to the position above the cleaning tank, the lifting cleaning mechanism drives the multiple wafers to make contact with cleaning liquid or be separated continuously, the swing cleaning mechanism drives the multiple wafers to swing in a reciprocating mode, swing cleaning is conducted on the multiple wafers, and therefore lifting and swing cleaning of the wafers is conveniently achieved; the cleaning effect and the cleaning efficiency of the wafer are effectively improved; in the wafer cleaning process, the cleaning liquid around the cleaning tank is lifted and stirred through the stirring and cleaning mechanism, so that the cleaning liquid moves, the condition of precipitation is avoided, stirring of the cleaning liquid in the wafer cleaning process is conveniently achieved, and the wafer cleaning effect is further improved.

The invention relates to a flow battery carbon-based electrode and a preparation method and application thereof, and the preparation method comprises the following steps: respectively dissolving cobalt salt and alkali in a polar organic solvent, and uniformly mixing to form a precursor solution; placing a carbon-based material in the precursor solution, and carrying out a hydrothermal reaction to obtain a carbon-based electrode precursor; and performing high-temperature carbonization on the carbon-based electrode precursor in an inert atmosphere, cooling to room temperature after the reaction is completed, and then cleaning and removing impurities from a product to obtain the carbon-based electrode, the polar organic solvent is at least one of formamide, acetonitrile and N, N-dimethylformamide; after cobalt cyanide is deposited on the surface of the carbon-based material, surface etching and nitrogen doping are carried out on the carbon-based material under the high-temperature condition, surface modification of the carbon-based material is achieved, the contact area of the surface of the carbon-based electrode and electrolyte is increased, and the electrochemical performance of the carbon-based electrode is improved.

The invention discloses a nano ardealite-based saline-alkali soil modifier and a preparation method thereof, and relates to the technical field of soil improvement, the method comprises the following steps: uniformly mixing humic acid, charcoal and a halophilic microbial agent, and then fermenting at 28-32 DEG C for 115-125 hours to obtain a fermentation system; the preparation method comprises the following steps: grinding ardealite into nano ardealite, dispersing the nano ardealite under the action of a surfactant and deionized water, and carrying out surface etching by using acid to form microdot vacancies on the surface of the nano ardealite, so as to obtain chemically modified nano ardealite; the nano phosphogypsum-based saline-alkali soil modifier is obtained by uniformly mixing the chemically modified nano phosphogypsum with a fermentation system, has the advantages of multiple effects, low cost and environmental friendliness, can significantly reduce the salinity and alkalinity of soil, improve the soil structure and promote the growth of crops, realizes the resource utilization of the phosphogypsum, and reduces the environmental pollution.

The invention discloses a silicon mullite brick with high connection stability and a production process thereof, and belongs to the technical field of silicon mullite brick preparation. Through the composite formula design of the multi-graded silicon carbide aggregate and the in-situ generated mullite precursor and in combination with a microwave-air pressure coupling sintering process, the optimization of the material structure is realized. Wherein the silicon carbide aggregate is subjected to surface etching to form a microporous structure, and the microporous structure and the aluminum phosphate nanofiber reinforced matrix form a three-dimensional interlocking network; dual-band microwave alternate radiation and staged air pressure dynamic regulation and control are adopted, substance diffusion is promoted at low temperature, and meanwhile pore formation is inhibited at high temperature; and in the gradient cooling stage, the grain boundary stability is enhanced through controllable oxygen partial pressure and rare earth steam treatment. The process effectively improves the interface bonding strength and thermal shock resistance of the silicon mullite brick, reduces the sintering energy consumption, and is suitable for refractory material preparation of high-temperature equipment such as a cement kiln and an incinerator.

The invention discloses a preparation method of heat-conducting silica gel for packaging a power module chip, which comprises the following steps of: optimizing diamond micro-powder filling, surface etching and particle size compounding, so that the heat conductivity coefficient of the prepared heat-conducting silica gel can reach 3.8-4.5 W / (m.K) which is far higher than that of common silica gel (generally less than or equal to 3.0 W / (m.K)); meanwhile, the specific surface area of the diamond and the interface bonding force between the diamond and silica gel are improved through surface etching, the interface thermal resistance is reduced, a more efficient heat conduction path is formed, the packing stacking density is maximized through particle size compounding, air gaps are reduced, and a more stable and communicated heat conduction network is constructed; the SiC device is high in power density and high in switching speed, and the chip junction temperature is the key to restrict performance and reliability. The material can quickly and uniformly transfer heat of a chip to a heat dissipation substrate, obviously reduce junction temperature and temperature gradient in a module, and improve power density and long-term reliability.

The invention relates to the technical field of circuit board etching, and discloses a PCB (printed circuit board) etching liquid homogenization system based on a liquid dynamic mixing structure, which comprises an etching tank, a protective plate is detachably mounted at the top of the etching tank, a rotating shaft is rotatably mounted in a space formed by the protective plate and the etching tank, a limiting part for clamping a PCB is arranged on the outer surface of the rotating shaft, and a swinging part for disturbing etching liquid is arranged in the etching tank; the limiting piece comprises a limiting frame fixedly connected to the outer surface of the rotating shaft, and the bottom of the limiting frame is fixedly connected with an abutting block. The PCB etching liquid homogenization system based on the liquid dynamic mixed structure can effectively solve the problems that in the prior art, products such as copper ions generated by reaction are locally accumulated, the concentration gradient can form a diffusion boundary layer, fresh etching liquid is prevented from being supplemented to the surface of a board, the etching rate is reduced, and the etching quality is influenced. Therefore, the etching rate of the surface of the circuit board is inconsistent, and the etching quality of the circuit board is affected.

A method of manufacturing a semiconductor device having a combination structure of a horizontal oxide layer structure and a vertical oxide layer structure, can include: etching from an upper surface of the semiconductor substrate to inside of the semiconductor substrate to form a trench; depositing oxides in the trench to form the vertical oxide layer structure; etching the vertical oxide layer structure from an upper surface thereof to decrease height of the vertical oxide layer structure, and to make a top surface of the vertical oxide layer structure be below the upper surface of the semiconductor substrate, in order to expose side surfaces of the trench; and forming, by an oxidation process, the horizontal oxide layer structure to cover part of the upper surface of the semiconductor substrate and the upper surface of the vertical oxide layer structure.

The invention discloses a doped perovskite catalyst with a noble metal exposed on the surface, a preparation method and application thereof, belongs to the technical field of catalytic materials, and particularly relates to application in catalytic removal of volatile organic compounds. The method comprises the following steps: performing composite molding on rare earth elements / alkaline earth metals, transition metals and noble metals by adopting a sol-gel method, and performing strong acid surface etching and other operations. The surface of the catalyst is provided with a noble metal nanocluster or noble metal nanoparticle structure, so that the surface area is increased, more active sites can be provided, the adsorption of reactant molecules is enhanced, and the conversion rate and selectivity of a catalytic reaction are further improved. Based on the structure and performance advantages, the catalyst disclosed by the invention can be used for efficiently removing volatile organic compounds, can effectively reduce the initial temperature of the catalytic oxidation reaction of the volatile organic compounds, and has a wide application prospect in treating various industrial processes needing high-temperature and efficient catalysis.

The invention provides a high-stability single-mode semiconductor laser based on dynamic wavefront shaping and a control system, and relates to the technical field of semiconductor lasers, comprising a semiconductor laser gain module, a dynamic wavefront shaping module, a single-mode screening module and a laser output module which are optically coupled in sequence, wherein the semiconductor laser gain module is composed of a quantum well structure gain chip, a distributed feedback grating and a surface plasma structure are integrated on the surface of an active area of the gain chip, and the distributed feedback grating and the surface plasma structure are combined on the surface of the active area through a surface etching process. According to the invention, through the dynamic wavefront shaping module and the multi-parameter closed-loop control system, real-time adaptive regulation and control of the whole laser output process are realized. According to the system, wavefront distortion can be rapidly detected and compensated in a complex disturbance environment, and response delay and manual intervention of traditional static correction are remarkably reduced.

The invention provides an aluminum foil and a preparation method thereof, the preparation method comprises the following steps: the aluminum foil is subjected to electrochemical corrosion in a mixed acid solution, the half cycle of alternating current adopted by the electrochemical corrosion comprises a plurality of wave crests, and the mixed acid solution comprises at least one of nitric acid and phosphoric acid; passivating the aluminum foil; washing the aluminum foil with water; and the steps of electrochemical corrosion, passivation treatment and water washing are repeated until the aluminum foil reaches the preset corrosion amount. The nitric acid can improve the overall corrosion amount, reduce the surface corrosion of the aluminum foil and promote the longitudinal development of corrosion. Phosphate radicals and aluminum ions can form a complex, so that the concentration of free Al < 3 + > in a hole etching area is reduced, corrosion reaction balance is pushed to move rightwards, and further corrosion is promoted.

The invention discloses a multi-material composite injection molding method and system, and the method comprises the steps: carrying out laser surface etching on a continuous fiber reinforced substrate to form a microgroove array, and spraying an activator to generate an activated fiber preform; performing infrared partition heating on the marginal area, constructing a temperature gradient field, positioning the marginal area to a mold cavity, injecting engineering plastic melt into a mold, synchronously collecting mold vibration frequency spectrum and infrared thermal imaging data, establishing a mapping relation between vibration dominant frequency characteristics and temperature gradient values, and dynamically regulating and controlling injection molding pressure and pressure maintaining switching time. A foaming elastomer material is injected into a reserved groove position of the matrix-fiber composite blank, a self-foaming reaction is triggered through blank waste heat, and a composite structural part is generated; based on vibration frequency spectrum and infrared thermal imaging data continuously collected in the injection molding process, the process health index is calculated, the product qualification is judged, control over a multi-material interface is achieved by fusing infrared thermal imaging, and efficient and low-consumption production is achieved while the composite strength and the sealing performance are improved.

The invention discloses a surface etching method for revealing dislocation defects of tellurium indium lead single crystals, and relates to a method for revealing crystal defects. The invention aims to provide a surface etching method capable of accurately exposing crystal defects. The method comprises the following steps: firstly, carrying out directional cutting, multi-stage mechanical polishing and chemical mechanical polishing on a PIT single crystal to obtain a smooth and damage-free surface; and reacting iodine with concentrated nitric acid to generate iodic acid as a main oxidant, adding hydrofluoric acid for activation, diluting with an acetic acid-water mixed solution, and etching the crystal at a low temperature of 10 + / -1 DEG C under ultrasonic assistance. According to the method, the regular triangular conical etching pit can be formed on the PIT single crystal (001) surface, the depth is 100-300 nm, the pit bottom points to the [001] direction, and the dislocation defect is clearly revealed. The method has the advantages of clear etching morphology, high sensitivity, high reliability and simplicity and convenience in operation, and can be applied to the fields of PIT single crystal quality evaluation, defect analysis and growth process optimization.

An integrated circuit device is disclosed. The integrated circuit device according to the inventive concept includes: a lower wiring structure located on a substrate; an air gap disposed between the lower wiring structures; a capping layer covering an upper surface of the air gap; an etch stop layer conformally covering upper surfaces of the lower wiring structures and the capping layer and having a protruding and recessed structure; an insulating layer covering the etch stop layer; and an upper wiring structure penetrating the insulating layer and connected to an upper surface of the lower wiring structure not covered by the etch stop layer, wherein the upper wiring structure covers a part of the upper surface of the capping layer, and a level of the upper surface of the capping layer is higher than a level of the upper surface of the lower wiring structure.

The invention discloses a preparation method of a tellurium-cadmium-mercury ring hole array with a high aspect ratio. The preparation method comprises the following steps: depositing a passivation layer and a sacrificial layer on the surface of a tellurium-cadmium-mercury material, preparing graphical photoresist on the sacrificial layer, and preparing ring holes by adopting an ion beam etching process with periodically variable angles and energy. According to the method, the sacrificial layer and the thin photoresist hard and soft mask are combined, so that the thickness of the photoetching mask can be reduced, the emitting range of a backwash object is enlarged, and the etching shadow effect and the etching damage of the material surface are reduced; periodic variable angle and energy etching changes the sputtering direction of the etched sediment and reduces the deposition of residues in holes on one hand, and on the other hand, part of the sediment can be etched and removed through periodic angle change, energy in part of the time period in the period is increased, and larger kinetic energy is provided for sputtering particles. The emergent angle distribution can be optimized, the secondary sputtering probability of sediments is increased, and deposition is inhibited. The method is suitable for preparing the ring hole array with the ring hole diameter being smaller than or equal to 2 micrometers and the depth-to-width ratio being larger than or equal to 2.5: 1.

The invention relates to a plasma surface etching process detection device, which comprises a detection carrying platform used for detecting the plasma surface etching process state of an object to be detected; the detection hole is formed in any position of the detection carrying table, and the detection hole has a depth on the detection carrying table; the detector is arranged on at least one side edge in the detection hole; wherein when the detection carrying platform detects the surface etching process state of the object to be detected and the detection hole is aligned with the detected position of the object to be detected, the detector arranged in the detection hole is used for detecting the surface etching process state of the object to be detected.

Provided is an etching liquid composition capable of sufficiently etching a layer containing copper in the depth direction while sufficiently suppressing side etching. An etchant composition for etching a layer containing copper, the etchant composition containing (A) a compound represented by general formula (1) (in general formula (1), R1 and R2 each independently represent a hydrogen atom, an amino group, a thiol group, a phenyl group or a carboxyl group; in the formula, when one of R1 and R2 is a hydrogen atom, the other is a thiol group, a phenyl group, or a carboxyl group. (B) at least one component selected from the group consisting of bivalent copper ions and trivalent iron ions; and (C) an aqueous solution of an acid and water.

To easily form a wafer to a set finishing thickness distribution even when a portion having a locally large thickness is generated on the wafer.SOLUTION: The present invention is a processing method for etching the upper surface of a wafer (W) into a predetermined thickness shape by irradiating the upper surface with plasmatized etching gas from an irradiation unit (50). The method includes a thickness distribution acquisition step of acquiring the thickness distribution of the entire upper surface of the wafer, a calculation step of calculating the irradiation position of the irradiation unit relative to the wafer and the irradiation amount of etching gas at the irradiation position on the basis of the difference between the thickness distribution acquired in the thickness distribution acquisition step and a predetermined finished thickness distribution, and an etching step of irradiating the upper surface of the wafer with the irradiation amount at the irradiation position calculated in the calculation step, thereby etching the upper surface of the wafer into the predetermined thickness shape.SELECTED DRAWING: Figure 1

Methods of depositing a liner layer in a semiconductor device are described. In some embodiments, the method includes depositing a carbon layer including carbon on a substrate, the substrate having at least one feature including a sidewall surface and the carbon layer having a carbon surface; and selectively depositing the liner layer on the sidewall surface over the carbon surface. In other embodiments, the method includes depositing a carbon layer comprising carbon in a bottom second portion of a substrate feature selectively over a top first portion of the substrate feature, the top first portion having a sidewall surface, the carbon layer having a carbon surface; etching the carbon surface; and depositing the conformal layer on the sidewall surface of the top first portion, the conformal layer deposited on the sidewall surface selectively over the carbon surface.

The invention relates to the field of battery materials, in particular to modified coal-based hard carbon and a preparation method thereof. The method comprises the following steps: etching a sodium chloride template, then carrying out chitosan derived carbon coating, subsequently carrying out dry ice grinding, and finally obtaining the coal-based hard carbon material with large interlayer spacing, surface etching and abundant defects. Compared with traditional hard carbon, the hard carbon has smaller particle size and higher oxygen content and defect concentration. According to the modified coal-based hard carbon disclosed by the invention, the microcrystalline structure is controlled through salt template etching, and the interlayer spacing is improved. The chitosan derived carbon coating optimizes the surface and defect structure. The coal-based hard carbon with a controllable pore structure is prepared by a method of combining salt template etching and a chitosan derived carbon coating, so that accurate conversion from coal to hard carbon is realized. Further dry ice milling has a smaller particle size and mitigates particle agglomeration. The defect concentration is improved by further utilizing the physical and chemical synergistic effect, and the etching effect on the surface of the hard carbon material is promoted.

Embodiments of the present invention relate to the technical field of printed circuit boards and disclose a method for processing a printed circuit board, a printed circuit board, and an electronic device. The method comprises: obtaining multiple printed circuit boards; performing parameter design and simulation optimization using finite element analysis software to obtain simulation parameters, and etching the printed circuit board surfaces to obtain a bionic honeycomb wrinkle structure based on the simulation parameters; applying a multi-level grayscale mask and photoresist coating to each printed circuit board based on the bionic honeycomb wrinkle structure, and etching to obtain an etched printed circuit board; laminating and bonding the multiple etched printed circuit boards in a staggered manner along a first direction, with adjacent etched printed circuit boards at least partially overlapping, and curling and pressing the staggered laminated and bonded printed circuit boards in the first direction using a mold to form a cylindrical printed circuit board; and baking and curing the cylindrical printed circuit board to obtain the cylindrical printed circuit board. The embodiments of the present invention provide a high-performance cylindrical printed circuit board.

A light guide enabled lamp includes a light guide. A light source positioned at an edge of the light guide directs light generated by energizing the light source throughout a length of the light guide reflective layer disposed on the light guide. A reflective layer is disposed on the light guide. A graphics pattern is formed on the light guide defining nano-scale optic patterns by a surface etching of the light guide. A polymeric material coating is applied over the light source, the light guide and the reflective layer. A coating is applied over the polymeric material coating using one of a wet coating process, a dry coating process, an in-mold injection-compression or lamination film application, and a post molding process.

The invention discloses a laser etching control method and system and electronic equipment, and relates to the related technical field of laser processing, and the method comprises the steps: adding an etching texture to a control center of the laser etching equipment, and enabling the etching texture to mark microstructure features based on key nodes; a first control block is additionally arranged by introducing curved surface point cloud projection, and a second control block is additionally arranged by optimizing a multi-axis free linkage mode; the etching texture is projected from a two-dimensional plane to a three-dimensional curved surface to execute etching positioning, multi-axis free linkage under cross-scale integration is executed in an idle stroke truncation mode, and a laser etching strategy is determined; and according to the laser etching strategy, driving laser etching equipment to execute automatic laser etching control. The technical problems that in the prior art, etching requirements with special microstructure features are difficult to process accurately, complex three-dimensional curved surface etching cannot be matched efficiently, and consequently laser etching precision is insufficient and efficiency is low are solved, and the technical effect of improving laser etching precision and machining efficiency is achieved.

The invention discloses an efficient PET surface etching scheme, and relates to the technical field of surface etching. The etching solution prepared by the invention comprises the following components: ammonium persulfate, a complexing agent, a buffering agent, ethanol and deionized water. According to the etching solution prepared by the invention, all the components have a synergistic effect, and the strong oxidizing property of ammonium persulfate is matched with other components, so that the etching efficiency of PET is greatly improved, and compared with a traditional etching solution, the etching time can be shortened; the buffer agent is used for stably controlling the pH value, and the complexing agent is used for treating impurities, so that excessive etching and damage to the PET material are reduced, and the performance of the PET material is ensured; the etching liquid does not contain harmful substances such as heavy metals, and the organic solvent ethanol is volatile and environment-friendly, so that the difficulty and cost of wastewater treatment are reduced, and better economic benefits are achieved.

The present application relates to a negative electrode active material, a method for preparing the same, a negative electrode composition, a negative electrode for a lithium secondary battery comprising the negative electrode composition, and a lithium secondary battery comprising the negative electrode. According to the present invention, a crystalline surface is etched by surface-etching a pulverized silicon-based active material itself via an alkaline solution treatment, so that lithium ion mobility can be controlled, and specific surface areas of a 111 plane and a 220 plane in the silicon-based active material can be adjusted in response to a change in etching conditions, thus, the lithium intercalation / deintercalation reaction is uniform, and the stress on the silicon-based active material is reduced.

The application relates to an oxidation testing device which comprises an experimental bin, a surface treatment assembly, an oxidation processor and a heating assembly. The experimental bin is configured with a testing cavity; the surface treatment assembly is arranged in the testing cavity; the surface treatment assembly is used for performing surface etching treatment on a sample to be tested located in the testing cavity; the oxidation processor is arranged in the testing cavity, and the oxidation processor is used for performing oxidation treatment on the sample to be tested subjected to the surface etching treatment for a preset time length; and the heating assembly is arranged in the testing cavity, and the heating assembly comprises a heating table which is used for bearing the sample to be tested and heating the same. The device can finally obtain the time required for critical secondary oxidation of the solder to be tested by adjusting the oxidation time of the oxidation processor on the solder to be tested, and then effectively guide the design of the process beat in the soldering process of the solar cell according to the time required for the critical secondary oxidation.

The present invention discloses a surface roughening method for a transparent material with a smooth surface, which includes the following steps: A coating is arranged on one side surface of the transparent material, and an intense light pulse is applied on the other side surface of the transparent material, utilizing the intense light pulse to pass through the transparent material to reach the coating; and a clean, highly transparent and rough surface is formed on the side surface of the transparent material originally provided with the coating. The present invention effectively realizes the roughening of the smooth surface of the transparent material, and avoids the technical disadvantages of glass surface etching, machining (such as sandblasting), laser machining and other processes in the prior art.

The present invention relates to the field of semiconductor device manufacturing technology, and more specifically to a method for fabricating an epitaxial wafer for reducing the internal stress of a power device, and an epitaxial wafer. The method comprises: forming a substrate, the substrate being made of a first material; etching a plurality of first grooves on the surface of the substrate; forming a buffer layer above the substrate, the buffer layer being made of a second material; etching a plurality of second grooves on the surface of the buffer layer; and forming an epitaxial layer on the surface of the buffer layer to form an epitaxial wafer. The present invention has the beneficial effect of avoiding the problem of insufficient stress release in the substrate and epitaxial layer in the prior art by providing the buffer layer, and further releasing the internal stress of the device by providing the first and second grooves, thereby improving the device yield.

The invention belongs to the technical field of silicon carbide epitaxial growth, and discloses a method for improving doping concentration uniformity of a P-type silicon carbide epitaxial wafer, which comprises the following steps of: introducing hydrogen with a preset flow into a reaction chamber, placing a silicon carbide substrate in the reaction chamber, keeping the input flow of the hydrogen unchanged, respectively adjusting the temperature and the pressure of the reaction chamber to a preset etching temperature and a preset etching pressure so as to etch the surface of the silicon carbide substrate to obtain the surface-etched silicon carbide substrate, and inputting ethylene gas and trichlorosilane gas into the reaction chamber through a lower channel of the layered gas homogenizing box so as to obtain the surface-etched silicon carbide substrate. Trimethylaluminum gas is input into the reaction chamber through an upper channel of the layered gas uniformizing box so as to promote the surface-etched silicon carbide substrate to grow an epitaxial layer, and a P-type silicon carbide epitaxial wafer with uniform doping concentration is prepared; reaction gas is separately input through the layered gas uniformizing box, the P-type silicon carbide epitaxial wafer with the uniform doping concentration is prepared, and the doping concentration uniformity of the P-type silicon carbide epitaxial wafer is improved.

This surface-treated copper foil comprises copper foil 10 and a metal layer 20 that is disposed on one surface of the copper foil 10 and that has a slower etching rate than the copper foil 10. The surface sharpness Sku on the metal layer 20 side is at least 5.0. Moreover, etching is performed from the metal layer 20 side.

The application discloses a 750-850nm waveband photonic crystal surface emitting laser and a preparation method, and belongs to the field of semiconductor lasers. The application is divided into surface etching and buried photonic crystal layer structures, uses n-GaAs as a substrate, combines surface etching or buried photonic crystal structures, uses amorphous silicon, titanium oxide, GaP or AlGaAs as main materials of a resonant cavity, utilizes large-area in-plane resonance and high coupling with a quantum well active layer, realizes low-loss resonance and optical gain, and realizes a 750-850nm waveband semiconductor laser with high light beam quality, high power and surface emission.