85 results about "Surface etching" patented technology

A method of manufacturing a semiconductor device having a combination structure of a horizontal oxide layer structure and a vertical oxide layer structure, can include: etching from an upper surface of the semiconductor substrate to inside of the semiconductor substrate to form a trench; depositing oxides in the trench to form the vertical oxide layer structure; etching the vertical oxide layer structure from an upper surface thereof to decrease height of the vertical oxide layer structure, and to make a top surface of the vertical oxide layer structure be below the upper surface of the semiconductor substrate, in order to expose side surfaces of the trench; and forming, by an oxidation process, the horizontal oxide layer structure to cover part of the upper surface of the semiconductor substrate and the upper surface of the vertical oxide layer structure.

The invention provides a high-stability single-mode semiconductor laser based on dynamic wavefront shaping and a control system, and relates to the technical field of semiconductor lasers, comprising a semiconductor laser gain module, a dynamic wavefront shaping module, a single-mode screening module and a laser output module which are optically coupled in sequence, wherein the semiconductor laser gain module is composed of a quantum well structure gain chip, a distributed feedback grating and a surface plasma structure are integrated on the surface of an active area of the gain chip, and the distributed feedback grating and the surface plasma structure are combined on the surface of the active area through a surface etching process. According to the invention, through the dynamic wavefront shaping module and the multi-parameter closed-loop control system, real-time adaptive regulation and control of the whole laser output process are realized. According to the system, wavefront distortion can be rapidly detected and compensated in a complex disturbance environment, and response delay and manual intervention of traditional static correction are remarkably reduced.

Methods of depositing a liner layer in a semiconductor device are described. In some embodiments, the method includes depositing a carbon layer including carbon on a substrate, the substrate having at least one feature including a sidewall surface and the carbon layer having a carbon surface; and selectively depositing the liner layer on the sidewall surface over the carbon surface. In other embodiments, the method includes depositing a carbon layer comprising carbon in a bottom second portion of a substrate feature selectively over a top first portion of the substrate feature, the top first portion having a sidewall surface, the carbon layer having a carbon surface; etching the carbon surface; and depositing the conformal layer on the sidewall surface of the top first portion, the conformal layer deposited on the sidewall surface selectively over the carbon surface.

The invention relates to the field of battery materials, in particular to modified coal-based hard carbon and a preparation method thereof. The method comprises the following steps: etching a sodium chloride template, then carrying out chitosan derived carbon coating, subsequently carrying out dry ice grinding, and finally obtaining the coal-based hard carbon material with large interlayer spacing, surface etching and abundant defects. Compared with traditional hard carbon, the hard carbon has smaller particle size and higher oxygen content and defect concentration. According to the modified coal-based hard carbon disclosed by the invention, the microcrystalline structure is controlled through salt template etching, and the interlayer spacing is improved. The chitosan derived carbon coating optimizes the surface and defect structure. The coal-based hard carbon with a controllable pore structure is prepared by a method of combining salt template etching and a chitosan derived carbon coating, so that accurate conversion from coal to hard carbon is realized. Further dry ice milling has a smaller particle size and mitigates particle agglomeration. The defect concentration is improved by further utilizing the physical and chemical synergistic effect, and the etching effect on the surface of the hard carbon material is promoted.

The invention discloses a laser etching control method and system and electronic equipment, and relates to the related technical field of laser processing, and the method comprises the steps: adding an etching texture to a control center of the laser etching equipment, and enabling the etching texture to mark microstructure features based on key nodes; a first control block is additionally arranged by introducing curved surface point cloud projection, and a second control block is additionally arranged by optimizing a multi-axis free linkage mode; the etching texture is projected from a two-dimensional plane to a three-dimensional curved surface to execute etching positioning, multi-axis free linkage under cross-scale integration is executed in an idle stroke truncation mode, and a laser etching strategy is determined; and according to the laser etching strategy, driving laser etching equipment to execute automatic laser etching control. The technical problems that in the prior art, etching requirements with special microstructure features are difficult to process accurately, complex three-dimensional curved surface etching cannot be matched efficiently, and consequently laser etching precision is insufficient and efficiency is low are solved, and the technical effect of improving laser etching precision and machining efficiency is achieved.

The application relates to an oxidation testing device which comprises an experimental bin, a surface treatment assembly, an oxidation processor and a heating assembly. The experimental bin is configured with a testing cavity; the surface treatment assembly is arranged in the testing cavity; the surface treatment assembly is used for performing surface etching treatment on a sample to be tested located in the testing cavity; the oxidation processor is arranged in the testing cavity, and the oxidation processor is used for performing oxidation treatment on the sample to be tested subjected to the surface etching treatment for a preset time length; and the heating assembly is arranged in the testing cavity, and the heating assembly comprises a heating table which is used for bearing the sample to be tested and heating the same. The device can finally obtain the time required for critical secondary oxidation of the solder to be tested by adjusting the oxidation time of the oxidation processor on the solder to be tested, and then effectively guide the design of the process beat in the soldering process of the solar cell according to the time required for the critical secondary oxidation.

The application discloses a 750-850nm waveband photonic crystal surface emitting laser and a preparation method, and belongs to the field of semiconductor lasers. The application is divided into surface etching and buried photonic crystal layer structures, uses n-GaAs as a substrate, combines surface etching or buried photonic crystal structures, uses amorphous silicon, titanium oxide, GaP or AlGaAs as main materials of a resonant cavity, utilizes large-area in-plane resonance and high coupling with a quantum well active layer, realizes low-loss resonance and optical gain, and realizes a 750-850nm waveband semiconductor laser with high light beam quality, high power and surface emission.

The invention provides a scandate active material with high Sc2O3 content and application thereof in an impregnated diffusion cathode, and belongs to the technical field of manufacturing of thermal diffusion cathodes for vacuum electronic devices, and the scandate active material is obtained by mixing BaCO3, CaCO3, Al2O3 and Sc2O3 according to a molar ratio of 12: 2: 3: 1, grinding, pressing into a sheet, heating to 1100-1150 DEG C in air, sintering for 24-48 hours, cooling and grinding. By optimizing the proportion of the components, the scandate active substance with the Sc2O3 mole percentage exceeding 5.5% is obtained, and the scandate active substance does not contain an ineffective active substance BaAl2O4, so that the emission performance of the impregnated diffusion cathode is improved; the composite material is applied to an impregnated diffusion cathode, and cathode surface modification treatment is carried out in combination with a surface etching technology, so that pore blockage caused by mechanical polishing or processing is effectively eliminated, and synchronous improvement of cathode emission current density and working stability is realized.

A method of memory device fabrication includes, providing a structure that includes first layers including word lines interleaved respectively with first dielectric layers, second layers including second dielectric layers interleaved respectively with the first dielectric layers, wherein the second layers are adjacent to the first layers, forming vertical recesses each of which extend to a surface of a respective one of the second dielectric layers in a first direction through the second layers, etching a respective lateral recess to expose a surface of a respective one of the word lines, and filling each respective lateral recess with at least one conductive material, such that the at least one conductive material in the respective lateral recess is in contact with the respective one of the word lines through the exposed surface.

A method of manufacturing a printed circuit board includes forming an intermediate layer on a first conductive layer disposed on a first insulating layer, forming a second conductive layer and a second insulating layer on the intermediate layer, separating the first insulating layer from at least one portion of the first conductive layer, and etching the first conductive layer and the intermediate layer. After the etching, a surface of the second conductive layer protrudes further than a surface of the second insulating layer. The intermediate layer before the etching includes a portion overlapping the second conductive layer in a vertical direction and another portion not overlapping the second conductive layer in the vertical direction.

Described herein is a method of using a cleaning composition in combination with one or more oxidants for removing post-etch or post-ash residue from the surface of a semiconductor substrate and / or for oxidative etching or partially oxidative etching of a layer or mask. Also described herein is the cleaning composition and a method of using the cleaning composition for removing post-etch or post-ash residue from the surface of a semiconductor substrate. Also described herein is a wet-etch composition including the cleaning composition and one or more oxidants as well as a method of using the wet-etch composition. Also described herein are a process for the manufacture of a semiconductor device from a semiconductor substrate and a kit including the cleaning composition and one or more oxidants.

The application discloses a kind of for embedding device's substrate mouth frame manufacturing method and substrate with mouth frame, disclose a kind of for embedding device's packaging substrate mouth frame and its manufacturing method, method includes the following steps: preparation metal layer;First surface etching first via hole, manufacturing first conducting metal column and first etching metal column in metal layer;First surface pressing first dielectric layer in metal layer;Second surface etching second via hole in metal layer;Manufacturing seed layer in the second surface of metal layer;Second surface manufacturing second conducting metal column and second etching metal column in metal layer;Second surface pressing second dielectric layer in metal layer;First dielectric layer and second dielectric layer are thinned;First etching metal column and second etching metal column are etched, and packaging substrate mouth frame is obtained.The mouth frame in the packaging substrate of the application has great improvement on production efficiency relative to mechanical or laser drilling preparation;By introducing metal layer in the packaging substrate, the mechanical strength and heat dissipation performance of the prepared packaging substrate are improved, and the coplanarity of packaging is also optimized.

The utility model relates to biomedical experiment equipment technical field discloses a kind of multifunctional brain slice constant-temperature incubation tank, including tank body, incubation assembly and control box.Tank body is double-layered hollow shell, filled with heat-conducting silica gel, bottom is provided with flexible electrothermal film, its surface etching spiral resistance grid, coverage area is 80% more than tank bottom area, downside has ceramic heat insulating sheet, cooperate multipoint temperature sensor and temperature controller using PID control algorithm, realize accurate temperature control.Incubation assembly contains incubation rack of being jointed in tank body, there are multiple rows of incubation tank on the frame, load net and bubble separation net are arranged in layers in tank, bottom corresponds bubble stone and flow guide cylinder.Gas distribution chamber is arranged in control box, connected with bubble stone through air distribution pipe and branch pipe, constitute gas supply system.The structure has excellent heat insulation performance and thermal stability, heating is uniform, can effectively protect brain slice activity, improve incubation effect, with significant technical advantage and practical value.

The invention discloses a method for reducing appearance marks on a copper surface after AMB solder etching, and the method comprises the following specific steps: S1, pressing and cutting a high-purity oxygen-free copper strip into a copper foil with the same size as supplied ceramic, and carrying out surface treatment; s2, stacking the high-purity oxygen-free copper strip and the ceramic for welding; s3, before silk-screen printing, the active metal brazing filler metal is taken out of the environment at the temperature below zero and placed at the room temperature for a period of time, and bubbles in the brazing filler metal are removed; s4, the active metal solder is combined with the high-purity oxygen-free copper strip and the ceramic substrate, and a reaction layer capable of being wetted by the liquid solder is generated; s5, performing chemical etching on the copper on the surface of the ceramic; s6, the preparation ratio of the hydrogen peroxide to the ammonia water to the EDTA-2Na is 13L: 10L: 1260g; s7, cutting the ceramic substrate; according to the method, the problem of copper surface corrosion is solved, the operation time is shortened, and the productivity is improved.

The application relates to the technical field of wafer process equipment, in particular to a preparation method of transparent heating glass and the transparent heating glass. The preparation method comprises the following steps: selecting a first glass layer, spraying silver powder on a first surface of the first glass layer to form an initial silver material layer, grinding the initial silver material layer to obtain a planar silver material layer, etching a conductive circuit on the surface of the planar silver material layer, and manufacturing a silver material electrode pair at parallel edges of the planar silver material layer; selecting a second glass layer, manufacturing a through hole on the second glass layer at a position corresponding to the silver material electrode pair; obtaining a glass melt and coating the surface of the second glass layer, aligning and pressing the coating surface of the second glass layer and the first surface of the first glass layer, melting the first glass layer and the second glass layer into one body through the glass melt, leading out and welding electrode wires of the silver material electrode pair through the through hole, and obtaining the transparent heating glass. The application can improve the reliability and service life of the transparent heating glass.

The application discloses a synergistic 3D printing metal implant and a preparation method thereof. The implant is prepared by the following steps: forming a nano-cone needle structure on the surface of a 3D printing porous metal implant body through micro-arc oxidation treatment and surface etching, and then sequentially immersing the implant in a solution containing antibacterial ions, heat treatment, suspension liquid containing composite functions and heat treatment. The 3D printing metal implant prepared by the application has stable and long-acting antibacterial performance, excellent biocompatibility and bone integration promotion effect. The preparation method is simple, low in cost and suitable for industrial production.

The application discloses a method for improving the metalization connection strength of n-type Bi2Te3-based thermoelectric elements based on anchoring effect, and comprises the following steps: configuring a n-type Bi2Te3-based wafer surface treatment agent, the composition of which comprises 40-50% sulfuric acid (volume), 1-2% nitric acid (volume), and the rest is water; immersing a clean n-type Bi2Te3-based wafer into the surface treatment agent to perform surface etching; then immersing the etched n-type Bi2Te3-based wafer into ultrapure water to perform ultrasonic treatment; performing metalization connection on the ultrasonically treated n-type Bi2Te3-based wafer through electroplating or chemical plating, the plated metal is easy to form anchoring effect with the n-type Bi2Te3, the metalization connection strength is improved; and finally performing scribing and cutting to obtain the Bi2Te3-based thermoelectric elements with high metalization connection strength. The application makes the n-type Bi2Te3-based wafer have high surface roughness before electroplating, which is beneficial to forming anchoring effect with the plated metal such as nickel, so that the Bi2Te3-based thermoelectric elements with high metalization connection strength are obtained, and the thermoelectric elements are not physically damaged, and the product qualification rate can be improved.

The invention belongs to the field of medical instruments, and particularly relates to an anti-cutting medical latex glove and a manufacturing method thereof. The method comprises the following steps: S1, carrying out surface impurity removal and surface etching on basalt fibers, and then modifying the basalt fibers by using a silane coupling agent; s2, preparing a mixed solution of basalt fibers and natural latex; s3, forming a layer of dried coagulator on the surface of the glove mold; s4, the glove mold obtained in the step S3 is soaked in the mixed solution obtained in the step S2, and preheating treatment is conducted; s5, vulcanizing; s6, demolding is conducted, and the anti-cutting medical latex gloves are obtained. According to the medical latex glove, the basalt short fiber reinforced latex composite material is adopted as basic liquid of the glove, and the basalt short fiber reinforced latex composite material can obtain excellent orientation and shear modulus, so that the anti-cutting performance and the wear-resisting performance of the medical latex glove are improved.

The utility model discloses a surface etching device for solid solar cell material processing, which comprises a main body frame, an etching groove and a hydraulic lifting assembly, the top end of the main body frame is provided with the etching groove, the outer side of the top end of the main body frame is fixedly connected with an isolation frame, and the top end in the isolation frame is fixedly connected with the hydraulic lifting assembly. Buffering protection structures are arranged on the two sides of the top end of the etching groove correspondingly, a material carrying plate is fixedly connected to the bottom end of the hydraulic lifting assembly, and a clamping structure is arranged in the material carrying plate. According to the utility model, the clamping structure is arranged, and the clamping blocks are symmetrically distributed, so that a solar cell material is symmetrically distributed and inserted along the clamping blocks, and the symmetrical clamping blocks are slowly pushed away towards two ends by the clamping blocks under the sliding structure of the sliding chute and the sliding block; and under the action of the extrusion springs, the clamping blocks stably clamp the two ends of the inserted solar cell material all the time, and convenient clamping of the solar cell material is achieved.

The invention relates to the technical field of high polymer materials, and particularly discloses a low-floating-fiber glass fiber reinforced polypropylene composite material and a preparation method thereof.The low-floating-fiber glass fiber reinforced polypropylene composite material comprises modified glass fibers, and the modified glass fibers are glass fibers subjected to laser surface etching and epoxy silane coupling agent surface grafting treatment; the method comprises the following steps: etching the surface of the glass fiber by using COlaser, soaking in siloxane hydrolysate, finally drying, and processing with a premix through an extruder to finally obtain the polypropylene composite material. According to the invention, laser is utilized to increase the surface roughness of the glass fiber, then the glass fiber is subjected to surface grafting treatment through the epoxy silane coupling agent, and the strong interface bonding force between the glass fiber and the polypropylene resin is further improved through the free radical initiator and the polyolefin elastomer during extrusion processing; the generation of floating fibers on the surface of the glass fiber reinforced polypropylene composite material is further reduced.

The application discloses a gallium nitride-based photonic crystal surface-emitting blue light laser and a preparation method thereof, and the structure comprises a substrate layer, a bottom GaN layer, a porous GaN layer, an AlGaN-n layer, an n electrode, a multilayer quantum well active layer formed by GaN / InGaN pairs, an AlGaN-p blocking layer, a GaN-p layer, a p electrode and a photonic crystal layer. The application proposes that the porous GaN with low and controllable refractive index is used as a cladding layer, the surface etching type photonic crystal structure is combined, and the layer structure design is optimized, so that the active layer and the surface photonic crystal layer can simultaneously have high resonant light field coupling strength, low threshold, high efficiency and high performance light emission are facilitated, and thus a new GaN-PCSEL is realized.

The application provides a novel millimeter wave array plane decoupling antenna, UV branches are printed between any two string feed patch antennas by etching the UV branches on the upper surface of a dielectric substrate, so that the phase of surface waves propagating through the UV branches is changed by 180 degrees from the phase of space waves, and the coupling of space waves is cancelled, so that the influence of antenna mutual coupling is reduced, and the isolation is improved. The UV branches are further arranged at the upper and lower sides of each patch to form a structure similar to a parasitic unit, so that the bandwidth can be expanded, and the high gain of the antenna is considered.

The utility model discloses an anti-fog polarized lens which comprises a PVA (Polyvinyl Alcohol) polarized film, and nanoscale pits are formed on the surface of the PVA polarized film through ion beam etching; the resin base material is cured and molded on the upper surface and the lower surface of the PVA polarizing film; the hardening layer is coated on the surface of the resin base material; the high anti-reflection layer is plated on the surface of the hardening layer; the multi-layer anti-fog protection layer is arranged on the surface of the high anti-reflection layer and sequentially comprises a silane coupling agent bottom layer, a nano silicon dioxide coating, a wear-resistant layer and a hydrophobic outer layer. According to the utility model, the nanoscale pits are etched and formed on the surface of the PVA polarizing film, so that the interface bonding capacity with resin is enhanced; in addition, the multiple anti-fog protective layers depend on the silane coupling agent bottom layer to enhance the adhesive force between the coating and the resin substrate, the nano-silica coating is nano-silica suspension liquid and is matched with the hydrophobic outer layer to improve the waterproof effect of the lens, and the middle wear-resistant layer enhances the wear resistance of the nano-silica coating film layer and improves the durability.

The invention discloses a heat dissipation shielding device packaging structure and a process thereof. The process comprises the following steps: mounting a film block on a substrate, stacking a metal block on the film block, integrally packaging and grinding to expose the metal block, etching a packaging material to form a groove, and exposing the surface of the substrate at the bottom of the groove; an adhesive layer is coated on the etched covering surface, and an adhesive layer is also coated in the groove; electroplating a circuit: electroplating a circuit layer on the surface of the adhesive layer along the adhesive layer coating path, and continuing to encapsulate the adhesive layer and the circuit layer; turning over the whole packaging body up and down, exposing the adhesive layer at the position of the film block and the groove, removing the film block, horizontally grinding the surface until the circuit layer at the groove is exposed, and exposing the metal block at the same time; according to the invention, the circuit layer is used as an internal shielding structure, the displacement current is absorbed and guided to the ground, the near-field intensity is reduced, the internal parasitic coupling is inhibited, the distribution of a local electric field is controlled, and a first barrier is formed.

This invention belongs to the field of quality inspection technology, and provides a surface etching quality inspection system and method for circuit boards. The method includes: scanning the entire etched circuit board, extracting features such as sidewall roughness and flatness, and establishing a target feature parameter set containing planar roughness data; performing defect feature matching based on the target feature parameter set to obtain effective segments of sawtooth defects, extracting defect geometric features and signal insertion loss features, and constructing a quantitative mapping model; triggering phase shift detection based on the insertion loss prediction value output by the quantitative mapping model, and constructing a defect detection boundary by combining historical detection data; analyzing the distribution bias of defect parameters within the defect detection boundary, and predicting the direction of defect over-standard evolution. The system includes: a feature extraction module, a mapping establishment module, a boundary recognition module, and an evolution analysis module. This invention is beneficial for improving the etching quality of circuit boards and is applicable to circuit board etching quality inspection scenarios.

The invention relates to an environment-friendly aluminum alloy surface treating agent with sand surface treatment and milky whitening effects as well as a preparation method and a use method of the environment-friendly aluminum alloy surface treating agent. Sodium bicarbonate and sodium glutamate which are low in pollution corrosivity are used as the aluminum alloy surface etching agent, sand surface treatment can be efficiently conducted on the aluminum alloy, and meanwhile the problem that sand surface treatment is not uniform due to strong acid and alkali treatment is avoided; in addition, sodium silicate is used as a surface milky white treatment reagent, so that the problem that a generated milky white coating is re-dissolved under a surface etching agent can be avoided, and sand surface treatment and milky white treatment are simultaneously carried out; in addition, the preparation method is simple, the use cost is reduced, and the waste liquid does not contain phosphorus, fluorine and other elements, and is safe and environment-friendly.

The application provides a plate heat exchanger, comprising: at least two plates arranged in a stack; each plate is etched on a single side surface to form at least two flow channels, and the flow channels extend along the length direction of the plate; wherein a porous coating is arranged in the flow channels. By arranging the porous coating in the flow channels, the number of vaporization cores on the inner wall of the flow channels can be greatly increased, the superheat degree of the boiling initiation can be reduced, the uniform generation and rapid separation of the micro-bubbles from the wall surface can be promoted, the aggregation and coalescence of the large bubbles can be inhibited, the flow channel blockage and the flow pressure drop increase can be avoided, and thus the boiling heat exchange capacity and the operation stability of the plate heat exchanger can be significantly improved.

The application provides a method for etching detection of subsurface damage of polished indium arsenide wafers, comprising: pretreating the polished indium arsenide wafers to obtain pretreated polished indium arsenide wafers; etching the pretreated polished indium arsenide wafers in a first etching solution for a preset time to obtain polished indium arsenide wafers etched by the first etching solution, wherein the first etching solution is prepared from phosphoric acid and hydrogen peroxide; etching the polished indium arsenide wafers etched by the first etching solution in a second etching solution for a preset time to obtain polished indium arsenide wafers etched by the second etching solution, wherein the second etching solution is prepared from hydrochloric acid and water; cleaning and drying the polished indium arsenide wafers etched by the second etching solution, and then observing the polished indium arsenide wafers etched by the second etching solution under a microscope to determine the number and distribution of surface etching pits of the polished indium arsenide wafers etched by the second etching solution.

This invention relates to the field of metal material testing technology, and particularly to a method for rapidly detecting the original β-grain size of near-β titanium alloys. The method includes the following steps: S1. A low-magnification sheet of a titanium alloy bar or forging is sequentially heated, held at a certain temperature, and cooled to obtain a sample to be tested; S2. The sample to be tested is polished, the surface is polished twice with a mixed acid, rinsed with anhydrous ethanol, and dried to obtain a treated sample; S3. The β-phase grain size on the surface of the treated sample is observed. The heat treatment method used in this invention can ensure that the original β-phase morphology does not change during heat treatment. After surface etching, it allows for direct observation and statistical analysis of the original β-grain size of near-β titanium alloys, which is more convenient for the formulation and optimization of actual titanium alloy production processes.

Method for fabricating an electrode pair for a Lithium-Ion Capacitor (LIC), where the method comprises the steps of preparing the positive electrode by, etching microstructures with a predetermined roughness in a surface of a metal film substrate, depositing in said microstructures a metal or metal compound layer, converting said metal or metal compound layer into metal nanoparticles, growing interconnected cross linked carbon nanotubes in said microstructures at said metal nanoparticle, and preparing the negative electrode.