164 results about "Alkaline etching" patented technology

The invention provides a buried resistor circuit board and a preparation method thereof. According to the resistance element, one resistance material is arranged on the dielectric layer to form the first resistance layer, and then the other resistance material is arranged on the first resistance layer to form the second resistance layer, so that the binding force of the resistance layers and the dielectric layer can be enhanced, and the surface flatness of the resistance element can be improved. The resistive layer of the resistive element is protected by using the protective film, so that the shape and the length of the resistive layer are prevented from being influenced by subsequent processes. According to the preparation method, the whole process is a dry process, a differential etching process is omitted, an alkaline etching solution does not need to be used, and the preparation method is environmentally friendly.

The invention discloses a hollow carbon sphere loaded Ni / NiO heterojunction material, which is prepared by the following steps: firstly preparing a solid carbon sphere loaded Ni / NiO heterojunction material SiO2-NC-Ni / NiO by a template sacrifice method, and then removing a SiO2 template by an alkaline etching method to obtain the hollow carbon sphere loaded Ni / NiO heterojunction material NC-Ni / NiO. The preparation method comprises the following steps: 1, preparing PDA coated silicon dioxide solid spheres; 2, preparing PDA coated silicon dioxide solid sphere loaded nickel ions; 3, preparing a carbon-coated silicon dioxide solid sphere loaded nickel-nickel oxide heterojunction; and 4, preparing the hollow carbon sphere loaded nickel-nickel oxide heterojunction. The invention relates to a preparation method of an NC-Ni / NiO doped lithium aluminum hydride hydrogen storage material, which comprises the following steps of: mixing NC-Ni / NiO serving as a catalyst and lithium aluminum hydride under an argon condition, and performing ball milling to obtain LiAlH4-NC-Ni / NiO. When the material is used as a hydrogen storage material, the initial dehydrogenation temperature is 60-70 DEG C, and the hydrogen desorption amount is 7.0-7.2 wt.%.

There is provided a gallium nitride single crystal substrate, which is a gallium nitride single crystal substrate having a diameter of 50 mm or more, with a low-index crystal plane closest to a main surface being (0001), and in which an average density of etch pits during etching applied to the main surface using an alkaline etching solution is less than 1×106 cm−2; and in histograms of diameters of the etch pits in multiple different regions on the main surface, and among peaks appearing in the histograms, when a diameter of a first peak which is a smallest diameter is denoted as a, a diameter of a second peak which is a second smallest diameter is denoted as b, frequency of the first peak (the number of etch pits) is denoted as A, frequency of the second peak is denoted as B, the number of the etch pits constituting the first peak is denoted as α, and the number of the etch pits constituting the second peak is denoted as β, at least one of the following conditions (1), (2), and (3) is satisfied: (1) variation in a / b values in the multiple histograms is within ±5% of an average value. (2) variation in A / B values in the multiple histograms is within ±15% of an average value. (3) variation in α / β values in the multiple histograms is within ±30% of an average value.

The invention discloses an aluminum alloy profile surface highlight corrosion-resistant treatment process which comprises the following steps: S1, pretreatment including degreasing and alkaline etching; s2, anodic oxidation; s3, chemical brightening treatment; s4, surface wiredrawing; s5, carrying out sand blasting; s6, highlight is conducted; s7, treating with a silane coupling agent; s8, carrying out secondary oxidation treatment; s9, performing nano-composite hole sealing; s10, spraying, printing and chemical brightening are used for replacing traditional mechanical polishing, so that the surface of the aluminum alloy profile is smoother, the uniformity of glossiness is improved, scratches possibly generated by mechanical polishing are avoided, stable chemical bonds are formed between the profile and a hole sealing layer through coupling agent treatment, the surface state is optimized, it can be ensured that a hole sealing agent can be attached more firmly, and the service life of the aluminum alloy profile is prolonged. According to the secondary oxidation treatment, an oxidation film is thickened after highlight treatment, the formed highlight surface is not affected, invasion of a corrosion medium is effectively blocked, nano-scale pores in the oxidation film are filled with nano silicon dioxide, a compact hole sealing layer is formed, and therefore the corrosion resistance of the workpiece is improved.

There is provided a gallium nitride single crystal substrate, which is a gallium nitride single crystal substrate having a diameter of 50 mm or more, with a low-index crystal plane closest to a main surface being (0001), and in which Ge concentration in the substrate is 3×1018 cm−3 or more; and among peaks appearing in a histogram of diameters of etch pits during etching applied to the main surface with an alkaline etching solution, a first peak having a smallest diameter is a single peak having no shoulder.

The invention provides a semiconductor structure and a forming method thereof. The semiconductor structure includes a plurality of bit line structures laterally spaced apart on a substrate, a landing pad between the bit line structures, a metal oxynitride layer overlying a top surface of the landing pad, and a capacitance structure extending vertically over the landing pad. A method of forming a semiconductor structure includes the following operations. A plurality of bit line structures are received on a substrate. A landing pad is formed between the bit line structures. A metal oxynitride layer is formed covering a top surface of the landing pad. And forming a sacrificial stack structure at the top of the metal oxynitride layer and the bit line structure. A trench is formed in the sacrificial stack structure to expose the metal oxynitride layer. A capacitor structure is formed in the trench. The semiconductor structure with the metal nitrogen oxide layer can protect the landing pad from being etched by the alkaline etchant.

The present invention discloses a silicon-mesoporous titanium dioxide composite negative electrode material, a preparation method and a battery, belonging to the technical field of battery materials; the material comprises mesoporous titanium dioxide, nano-silicon and an outer coated carbon layer, wherein the mesoporous titanium dioxide has a pore diameter of 2-20 nm and a pore volume of 0.2-1.0 cm 3 / g, specific surface area 80-360m 2 / g, the nano-silicon is loaded inside the pores and on the surface of the skeleton of mesoporous titanium dioxide, the nano-silicon loading is 30-70%, the carbon coating amount is 1.5-10%, and the thickness of the silicon layer loaded on the surface of the mesoporous titanium dioxide skeleton is less than 10nm; the present invention increases the loading amount of silicon on titanium dioxide through monosilane vapor deposition, and effectively removes silicon vapor-deposited outside the pores and on the surface of the titanium dioxide carrier through alkaline etching; the obtained negative electrode material has the characteristics of high capacity, small expansion rate, stable structure and good cycle performance.

The application discloses a kind of preparation ball-in-bowl structure carbon-based materials and preparation method thereof.The carbon material presents hollow composite structure, is composed of inside "carbon bowl" and outside "carbon hollow ball".Gap exists between inside "carbon bowl" and outer carbon ball, and mesoporous channel is distributed on the surface of carbon bowl and carbon ball.The steps of the preparation method are as follows: firstly, using SiO2 nano solid ball as hard template, adopt two-step surface coating method and polymer modification method to obtain phenolic resin (RF) coated SiO2@RF-PS@SiO2@RF composite structure.Then, high-temperature carbonization is carried out to form SiO2@C@SiO2@C composite material.Finally, the two layers of SiO2 template are removed by one-time alkaline etching method to obtain the carbon composite material with ball-in-bowl structure.The ball-in-bowl structure carbon-based material in the application has regular structure, low density, high specific surface area and rich loading sites, and will be widely applied in the fields of catalysis, energy storage and biosensing.This method provides a new reference scheme for the design of carbon nano composite structure.

The invention provides a glass ceramic strengthening method and strengthened glass ceramic, and belongs to the technical field of glass ceramic processing. The glass ceramic strengthening method comprises the following steps: sequentially carrying out first-time surface modification treatment, toughening treatment, second-time surface modification treatment and organic acid treatment on the glass ceramic, the first surface modification treatment and the second surface modification treatment independently comprise at least one of polishing treatment, alkaline etching treatment and inorganic acid liquid etching treatment. The glass ceramic is sequentially subjected to the first surface modification treatment, the toughening treatment, the second surface modification treatment and the organic acid treatment, so that the roughness can be reduced, and the impact resistance of the glass ceramic is remarkably improved.

The invention relates to the technical field of biomedicine, in particular to a preparation method of sequential targeting mesoporous manganese oxide nano-enzyme and application of the sequential targeting mesoporous manganese oxide nano-enzyme in treatment of ischemia reperfusion induced acute kidney injury. Adding a potassium permanganate solution into the silicon dioxide nanoparticle dispersion liquid under ultrasonic waves, and carrying out alkali etching to obtain mesoporous manganese oxide nanoparticles (HMN); and after surface amination modification, connecting with a mixed PEG spacer layer, and reacting with thiolated SS31 and azidoacyl hyaluronic acid to obtain the nano-enzyme. The preparation can effectively penetrate through a damaged glomerulus filtration barrier and is passively enriched in a damaged kidney, damaged renal tubular epithelial cells over-express CD44 receptor mediated hyaluronic acid modified nano-particle endocytosis is enhanced, SS31 modified nano-particles achieve lysosome escape mitochondrial targeting in cells, the level of active oxygen in mitochondria can be reduced, and the activity of the mitochondria can be improved. The mitochondrial function is recovered, the renal function and tissue pathological injury are improved, and accurate anti-oxidation treatment on the acute kidney injury is realized.

The invention relates to forming a local p-type polycrystalline silicon through an approach of local p-type doping followed by selective alkaline etching enabling five different crystalline silicon-based single junction and bottom structure for tandem architectures solar cells.

The application relates to a preparation method of a glass substrate with a through hole, which comprises the following steps: scanning a predetermined through hole area of a glass substrate by using a laser; immersing the scanned glass substrate into an alkaline etching solution to perform alkaline etching until a micro through hole with an inner diameter of 5-15 microns is formed through the glass substrate; the alkaline etching is performed under the assistance of megasonic waves with a frequency of 0.5-2 MHz; immersing the glass substrate with the micro through hole into an acidic etching solution to perform acidic etching until the inner diameter of the micro through hole reaches a target value, and the glass substrate with the through hole is prepared. The above method realizes efficient longitudinal etching on the glass substrate, greatly improves the depth-width ratio of the through hole, reduces the side etching amount, and obtains the glass substrate with the high-depth-width-ratio and high-precision through hole.

The present invention provides an alkaline etching additive, an alkaline etching solution, and a method for cleaning wrap-around polycrystalline silicon. The alkaline etching additive comprises a protective component and a component for accelerating the etching of silicon, and can increase the etching rate of polycrystalline silicon, protect an oxide layer of a PN junction and increase the difference between the etching rates of B / PSG and polycrystalline silicon etched by an alkali. The additive enables the etching rate of polycrystalline silicon to reach 960 nm / min, whereas the reaction rates for PSG and BSG are 5.4 nm / min and 7.2 nm / min, respectively, thereby achieving the complete isolation of P and N regions and improving the battery yield. An anionic surfactant and a dispersant improve the cleaning efficiency and a polishing effect. Compared with traditional acid washing and soda ash washing methods, the additive can not only increase the removal rate of polycrystalline silicon, but can also protect the structure of a battery, expand a process window and improve the production stability. The technique is particularly suitable for the preparation of batteries having a TOPCon structure, and improves the performance and stability of a battery by optimizing the deposition and cleaning processes of polycrystalline silicon.

The invention discloses a modified aluminum composite current collector and a preparation method thereof, and relates to the field of lithium ion battery current collector materials. The method comprises the following steps: sequentially carrying out alkaline degreasing, alkaline etching, bright dipping and secondary activation pretreatment on the alloy aluminum foil; chemically plating a Ni-P alloy base layer on the surface of the aluminum foil; then electroplating a graphene composite zinc layer in an acidic plating solution containing carboxylated modified graphene by taking the chemically-plated aluminum foil as a cathode and a high-purity zinc plate as an anode; and finally, washing, hot air drying and inert atmosphere annealing are performed to prepare the modified aluminum composite current collector. Through the double-layer structure of the chemical plating Ni-P layer and the electroplating graphene composite zinc layer, the problems that a traditional aluminum foil interface is large in contact resistance, low in first efficiency, poor in mechanical property and unstable in conductivity are effectively solved, the comprehensive performance of the product is excellent, the process is stable, the cost is controllable, and the method is suitable for industrial production of the lithium ion battery.

The invention discloses a monolithic catalyst based on a metal carrier, a preparation method and application. The method comprises the following steps: performing alkali / acid ultrasonic cleaning on a metal carrier, drying, forming an oxide layer on the surface of the carrier through gradient oxidation treatment, and finally loading a catalyst layer by adopting an impregnation method, a 3D printing coating method or an electric arc spraying method, surface impurities are removed through alkali etching, and a special oxide layer structure is formed on the surface of the metal carrier in combination with a gradient oxidation process, so that the interface bonding strength of the catalyst and the carrier is remarkably enhanced, and the mass transfer / heat transfer performance is optimized. The method is simple in process and easy for large-scale production, and the prepared catalyst shows excellent catalytic activity and high-temperature stability in ammonia decomposition hydrogen production reaction, and is especially suitable for high-efficiency hydrogen production application under high-temperature conditions.

The application discloses a slotting method for a DDR5 product and relates to the technical field of packaging substrates. The method comprises the following steps: obtaining a copper-clad substrate and drilling the copper-clad substrate; manufacturing lines and leads on the surface of the copper-clad substrate; setting a solder resist layer on the surface of the copper-clad substrate and performing windowing on the solder resist layer to expose the pads and the leads; attaching a photosensitive dry film to the surface of the solder resist layer and performing exposure and development on the photosensitive dry film to expose the pads and cover the leads; electroplating a soft gold layer on the pads; removing the photosensitive dry film and removing the leads through alkaline etching; performing layer-by-layer milling on the copper-clad substrate by using a left-handed double-blade knife to form slotting; milling the copper-clad substrate to form a shaped small plate; and cleaning, detecting and packaging the shaped small plate. According to the method, the slotting quality can be improved, and problems such as burrs or substrate cracking can be avoided.

The present invention discloses a method for preparing a solar cell and a solar cell. The method comprises removing the second mask layer on the first surface and side surfaces of a silicon substrate using a chain acid etching process; removing the second tunneling passivation structure on the first surface and side surfaces of the silicon substrate using a chain alkaline etching process; removing the second tunneling passivation structure in the first and third regions of the second surface of the silicon substrate using a groove etching process, forming a suede light-trapping structure in the third region of the second surface of the silicon substrate and on the first surface, and removing the first mask layer in the first region and the second mask layer in the second region of the second surface of the silicon substrate. The method for preparing a solar cell and the solar cell of the present invention can optimize the cell preparation process, protect the environment, improve the suede quality, and increase cell efficiency.

The invention discloses an optical device PCB printed board half hole metallization processing method, and belongs to the technical field of PCB printed board manufacturing. The optical device PCB printed board half hole metallization processing method comprises the steps of round hole drilling, circuit manufacturing through acid etching, wire pulling and tinning to protect a round hole, edge milling to form a half hole, alkaline etching, tin stripping and the like in sequence. And half-hole metallization processing is completed under the acidic etching condition meeting the special performance requirements of products. The processing method has the beneficial effects that acid etching and alkaline etching are ingeniously combined, the technical problem that half-hole metallization is difficult to realize under an acid etching process is solved in a way of pulling a wire near the round hole and tinning protection, the special performance required by a product is ensured, fine processing of half-hole metallization is realized, and the product quality is improved. And the quality and the performance of the product are improved.

The invention relates to the technical field of PCB (Printed Circuit Board) processing, and discloses a preparation method for realizing no residual copper in a PCB back drilling signal hole by adopting alkaline etching, which comprises the following steps of: stacking a substrate of which the inner layer is etched with graphic data, a semi-fixed sheet and an outer-layer copper foil according to a preset stacking structure, and pressing into a whole through a vacuum hot press; a signal hole is machined in the position of the signal hole in a mechanical drilling mode; depositing a layer of chemical copper in the signal hole, and then electroplating a layer of thin copper, wherein the thickness of the electroplated copper is 4-10 [mu] m; electroplating a protective metal layer on the electroplating copper layer; and the residual copper of the signal hole part is removed in a secondary drilling mode. The invention aims to adopt a pulse mode to carry out flash plating on thin copper on the hole wall and then electroplate metal tin on a copper protection layer on the hole wall. According to the actual residual copper length level and the rapid flash plating thin copper layer thickness after mechanical drilling, redundant residual copper is removed in an alkaline etching and rapid flash etching mode, and the purpose that no residual copper exists in the back drilling signal hole is achieved.

This is an alkaline etching process for glass, and the technical process involves immersing a glass substrate in an alkaline etching solution. The alkaline etching solution is a 40% to 56% concentration sodium hydroxide solution, the temperature of the alkaline etching solution is 100 to 130°C, and the immersion time is 100 to 300 minutes. The alkaline etching process for glass can be used for thinning glass and anti-glare treatment of glass surfaces, and can also be used to remove the convex points of the uneven micro-nanopoints of anti-glare glass to achieve a non-sparkle effect or a low-sparkle effect. By selecting sodium hydroxide (caustic soda) from the two major industrial alkalis and changing from acid etching to alkaline etching, the etching accuracy of ultrathin electronic glass is improved and manufacturing costs are reduced. In addition, since the manufacturing process does not generate fluorine-containing wastewater or hazardous waste, i.e., fluorine-containing lime sludge, environmental pollution is reduced. This process has a significant effect on environmental protection, innovation, pollution reduction, and emission reduction.

This invention relates to the field of high-performance fiber materials technology, and discloses a long-lasting, UV-resistant, and highly stable Kevlar fiber. Using para-aramid as a matrix, it incorporates in-situ copolymerized grafted bis(aminotriazine)-benzimidazole UV-stabilizing units, and its surface is covalently bonded with a CeO2-TiO2 composite nanolayer via a silane coupling agent. This results in excellent UV resistance and structural stability, with a UPF value of 50-100+, and a strength retention rate of ≥90% after 500 hours of xenon lamp aging. It also retains ultra-high strength, high modulus, and high-temperature resistance. The preparation method includes synthesizing the bis(aminotriazine)-benzimidazole comonomer, low-temperature polycondensation of this comonomer with p-phenylenediamine and terephthaloyl chloride to obtain a copolymer spinning solution, followed by dry-wet spinning, alkaline etching, composite sol-coating, and high-temperature curing to obtain the target fiber. This invention employs dual modification through internal copolymerization and surface coating, resulting in a simple process suitable for industrial production. The obtained fiber can be used in aerospace, defense, and outdoor protection applications requiring long-term UV exposure.

The application discloses a kind of etching waste liquid recycling reaction process pH automatic control method including preparation reaction buffer and preparation two steps of basic copper chloride, wherein in preparation basic copper chloride step, the pH value of reaction system can be read in real time by pH sensor and feedback to controller, and by controller, the addition volume of acidic etching waste liquid and alkaline etching waste liquid is adjusted in real time according to system pH value, to prepare granular basic copper chloride, can realize strict control the pH value of entire process, ensure the quality of basic copper chloride, without relying on manual detection pH, production efficiency is high, and realizes accurate control feeding amount, avoid excessive addition material to cause cost increase, in addition, response speed is also improved, once reaction system pH value abnormally fluctuates, system can quickly make adjustment.

The invention discloses a manufacturing method of a circuit board and the circuit board. The manufacturing method comprises the following steps: cutting a working board according to engineering data; wherein the working plate comprises a substrate and a copper layer covering an element surface and a welding surface on two sides of the substrate; carrying out first whole plate electroplating on the working plate; covering a dry film on the surface of the element; developing the element surface; performing acid etching on the first non-circuit region; screen printing resin in the first non-circuit area; carrying out second-time whole plate electroplating on the working plate; covering a dry film on the element surface, and performing external image development on the element surface, the first circuit area being not covered by the dry film, and the first non-circuit area being covered by the dry film; electroplating a copper layer with the thickness of H3 in the first circuit area; and removing a dry film from the first non-circuit area after tinning the first circuit area so as to carry out alkaline etching on the first non-circuit area. The first non-line area is etched twice, the copper thickness of each etching is reduced, the line width compensation can be greatly reduced, and the problem that the line width compensation is small is solved.

The invention discloses a method for manufacturing a circuit board with a locally-electroplated nickel-gold bonding pad and the circuit board, and the method comprises the following steps in sequence: plating copper on a board surface; manufacturing an initial bonding pad pattern; plating nickel and gold on the bonding pad; primary film stripping: exposing the copper layer and the nickel-gold layer higher than the copper layer; performing positive sheet treatment: exposing the side wall surface at the joint of the copper layer and the nickel-gold layer; tin plating treatment: electroplating tin on the side wall surface to form a tin layer; secondary film stripping: stripping the dry film on the surface to expose the copper layer and the nickel-gold layer; and etching processing: removing the copper foil by using an alkaline etching solution so as to process an outer-layer circuit. Through an innovative process of firstly plating copper, locally plating nickel and gold, then etching a positive plate and tinning to protect a circuit on the side wall of the bonding pad, the problems of infirm dry film lamination and etching medicine permeation caused by the height difference between a nickel-gold bonding pad and a copper surface in a traditional method are effectively solved, the yield and reliability of the circuit are remarkably improved, and the functions of the bonding pad and the integrity of the circuit are considered.

This invention discloses a process for improving the stability of etching quality, relating to the field of PCB processing technology. It enables automatic closed-loop control across multiple processes, ensuring that products in the same batch can automatically use the correct production parameters under different etching copper thickness results, achieving consistent product quality. The process for improving etching quality stability includes the following steps: encoding each production board individually → setting up a code reader before each process → database establishment → drilling → copper plating → board plating → copper thickness measurement → external light imaging → pattern electroplating → alkaline etching → drying → line width detection → data feedback. By encoding each production board individually, detecting copper thickness before etching, and detecting line width after etching and recording the data in a database, the optimal etching production speed is calculated through rules, and the etching speed of subsequent production boards is adjusted. This achieves data accumulation while further improving the stable control of the etching production speed.

The utility model provides an ammonia water evaporation and absorption device in an alkaline etching liquid regeneration process, the device comprises an evaporation unit, a condensation collection unit and an absorption unit, the evaporation unit comprises an evaporator, the condensation collection unit comprises a condenser and a condensate collection tank, the absorption unit comprises a jet device and a regeneration liquid absorption cylinder, and the regeneration liquid absorption cylinder is connected with the evaporator. A top outlet of the evaporator is connected with the condensate collecting tank through the condenser, a top outlet of the condensate collecting tank is connected with a gas phase inlet of the jet device, a liquid phase inlet of the jet device is connected with a bottom outlet of the regenerated liquid absorption cylinder, and an outlet of the jet device is connected with an inlet of the regenerated liquid absorption cylinder. According to the utility model, by arranging the evaporation, condensation collection and absorption structure units and adopting an ammonia water evaporation and ammonia gas jet absorption mode, ammonia is supplemented during regeneration of the alkaline etching liquid, so that the swelling amount of the alkaline etching liquid can be effectively reduced, and the treatment cost is reduced; the device is simple in structure, small in occupied area and high in automation degree, and equipment modularization is easy to achieve.

The utility model discloses an alkaline etching liquid regeneration and copper recovery system, and relates to the technical field of electrolytic copper, the alkaline etching liquid regeneration and copper recovery system comprises an electrolytic tank, a material receiving bin and a push rod motor, the top of the material receiving bin is provided with a through groove, two sides of the through groove are fixedly connected with scrapers for scraping copper, two sides of the top of the material receiving bin are fixedly connected with barrier strips, and the barrier strips are fixedly connected with the push rod motor. And a side through groove is formed in one side of the electrolytic tank, the material collecting bin is slidably connected with the inner wall of the side through groove in a penetrating mode, the bottom of a push rod of the push rod motor is fixedly connected with a second supporting frame, and the bottom of the second supporting frame is fixedly connected with a second electrode plate. The problems that copper accumulation attached to the surface of a cathode plate can reduce the precipitation efficiency of copper in waste liquid, the cathode plate needs to be taken out for copper scraping, then the cathode plate is reinstalled and fixed in an electrolytic tank, the process of taking out and putting back is tedious, and the electrolytic efficiency is greatly reduced are solved.

The invention relates to the technical field of wafer COP defect identification methods based on detection before polishing, particularly discloses a wafer COP defect identification method based on detection before polishing, and aims to solve the problems of high invalid processing cost and low screening accuracy caused by the fact that traditional COP defect identification depends on a polished surface. The method comprises the following steps: carrying out alkali corrosion treatment on a silicon wafer to expose crystal original particle defects; selectively marking the defect area by adopting a fluorescein aqueous solution with specific wavelength and concentration; after cleaning with high-purity water and drying with compressed air, analyzing the peak position, the peak width and the strength of a defect luminescence peak through photoluminescence spectrum, and realizing accurate identification of the defect by combining a support vector machine model. By adopting the technical scheme, the wafer COP defect can be efficiently and accurately identified before polishing, the invalid polishing cost is remarkably reduced, and the process economy and the detection flux of regenerated wafer screening are improved.

There is provided a gallium nitride single crystal substrate, which is a gallium nitride single crystal substrate having a diameter of 50 mm or more, with a low-index crystal plane closest to a main surface being (0001), and in which Ge concentration in the substrate is 3×1018 cm−3 or more; and among peaks appearing in a histogram of diameters of etch pits during etching applied to the main surface with an alkaline etching solution, a first peak having a smallest diameter is a single peak having no shoulder.

The invention relates to the technical field of extraction systems, and discloses an alkaline etching liquid treatment system and a treatment method.The alkaline etching liquid treatment system comprises a liquid separation box, a groove is formed in the inner bottom face of the liquid separation box, a collecting box is placed in the groove, the groove divides the inner bottom face of the liquid separation box, and the collecting box is arranged in the groove; the material collecting tables are obliquely and downwards arranged from the ends away from the collecting box to the ends close to the collecting box; longitudinal driving mechanisms are connected to the ends, away from each other, of the upper surfaces of the liquid separation boxes, and cleaning mechanisms are connected to the driving ends of the longitudinal driving mechanisms. Sediments are guided to be directionally gathered towards the collecting box through the obliquely-arranged collecting table, the cleaning plate stably moves along the surface of the collecting table in cooperation with the cleaning mechanism driven by the longitudinal driving mechanism, the sediments are efficiently pushed into the collecting box, the sediments are prevented from being gathered and caked from the source, and the problems that a pipeline is blocked and the liquid quality is affected are completely eradicated.