5438 results about "Cleaning methods" patented technology

During a deposition process, material may deposit not only on the substrate, but also on other chamber components. In a MOCVD chamber, one of those components is the gas distribution showerhead. The showerhead may be cleaned by bombarding the showerhead with radicals generated by a plasma that includes an inert gas and chlorine. In order to generate the plasma, the showerhead may be negatively biased or floating relative to the substrate support. The showerhead may comprise stainless steel and be coated with a ceramic coating.

A method for seasoning a deposition chamber wherein the chamber components and walls are densely coated with a material that does not contain carbon prior to deposition of an organo-silicon material on a substrate. An optional carbon-containing layer may be deposited therebetween. A chamber cleaning method using low energy plasma and low pressure to remove residue from internal chamber surfaces is provided and may be combined with the seasoning process.

A substrate processing apparatus includes a processing vessel provided with a stage holding thereon a substrate to be processed and evacuated at an evacuation port, and a source gas supplying system that supplies plural source gases to the processing vessel separately in the form of a laminar flow, wherein the evacuation port has a slit-form shape extending in a direction generally intersecting perpendicularly to a direction of the laminar flow, the evacuation port is engaged with a valve having a valve body formed with a slit-form opening corresponding to the slit-form shape of the evacuation port, the slit-form opening being provided so as to cause a displacement with respect to the evacuation port in a direction generally intersecting perpendicularly to an extending direction of the evacuation port, the valve changing a degree of valve opening thereof via displacement of said slit-form opening.

The invention provides a cleaning robot and a cleaning method thereby. On the basis of acquired detection data and the current position and gesture data, the method comprises the following steps of: determining a preset point as the original point of a map; acquiring boundary data of a wall or an obstacle near the wall to generate the boundary of the map; performing first ergodic operation in the boundary of the map in a preset ergodic mode; if encountering an isolated obstacle, acquiring position and outline data by surrounding the isolated obstacle; identifying regions which can be cleaned in the map boundary according to the position and outline data and the boundary data; at the same time of or after the first ergodic operation, cleaning according to the preset cleaning mode; identifying the non-cleaning regions in the cleaning regions according to the cleaning route; and then cleaning the non-cleaning regions. Compared with the conventional blind cleaning methods, the cleaning method has the advantage of greatly improving cleaning efficiency.

An intravascular port access device includes a first component having a chamber configured to attach reversibly to an intravenous line port. A second component reversibly attaches to the first component and contains a disinfecting agent and an applicator material. The second component is configured to be reversibly received over external surfaces of the intravenous line port. A method of cleansing an intravenous line port includes providing a port cleaning device having a first component with a chamber containing a first cleaning agent. A second component includes a second cleaning agent. A third component has a microbiocidal agent and is reversibly attached to the first component. The second component is removed from the device, the external surfaces of the port are contacted with the second cleaning agent, the first cleaning agent is ejected from the chamber into the port, and the third component is used to cap the port.

A cleaning process for cleaning a thermal processing apparatus includes: a heating step of heating an interior of a reaction tube at 300° C., and a cleaning step of removing deposits deposited in the thermal processing apparatus. In the cleaning step, a cleaning gas containing fluorine gas, chlorine gas and nitrogen gas is supplied into the interior of the reaction tube heated at 300° C. to remove silicon nitride so to clean an interior of the thermal processing apparatus.

A plasma generation method in a toroidal plasma generator that includes a gas passage having a gas entrance and a gas outlet and forming a circuitous path and a coil wound around a part of the gas passage includes the steps of supplying a mixed gas of an Ar gas and an NF3 gas containing at least 5% of NF3 and igniting plasma by driving the coil with a high-frequency power, wherein the plasma ignition step is conducted under a total pressure of 6.65-66.5 Pa.

The invention discloses a method for cleaning an oil tank. The method for cleaning the oil tank is characterized by adopting the following sequential steps under the totally closed condition: crude oil transporting, inert gas filling, homogenic oil cleaning, warm water cleaning, tank ventilating, tank slag removing and other pure physical and mechanical cleaning methods. After the method is adopted for cleaning, above 95% of residual oil in the tank can be recycled and reused, so the comprehensive benefit is obvious; the tank is cleanly and thoroughly cleaned, and even the metal can be seen; and the flame operation standard can be realized in the tank.

To provide a method of cleaning a film forming apparatus capable of uniformly removing a deposit containing tantalum nitride, titanium nitride, tantalum, or titanium adhering to a wall of a processing chamber of the film forming apparatus at a high etching rate without use of plasma. A method of cleaning a film forming apparatus for removing a deposit containing tantalum nitride, titanium nitride, tantalum, or titanium deposited on a processing chamber of the film forming apparatus after it is used for forming a thin film made of tantalum nitride, titanium nitride, tantalum, or titanium, the cleaning method comprising: a step of supplying process gas containing fluorine gas into the processing chamber of the film forming apparatus; and a step of heating the processing chamber.

A cleaning method of removing a vapor-deposition material adhering to equipments without exposure to the atmosphere is provided. A vapor-deposition material adhering to equipments (components of a film-forming apparatus) such as a substrate holder, a vapor-deposition mask, a mask holder, or an adhesion preventing shield provided in a film-forming chamber are subjected to heat treatment. Because of this, the adhering vapor-deposition material is re-sublimated, and removed by exhaust through a vacuum pump. By including such a cleaning method in the steps of manufacturing an electro-optical device, the manufacturing steps are shortened, and an electro-optical device with high reliability can be realized.

An automatic cleaning system for solar panels has a time controller, a detection device, a perfusion device, a driving device and a cleaning device. Based on predetermined time values, execution signals are sent to the perfusion device, the driving device and the detection device to implement prompt assessment of the need for cleaning and cleaning, if warranted. Also provided is an automatic cleaning method using the system.

A plasma CVD apparatus conducting self-cleaning comprises a reaction chamber, a susceptor, a showerhead, a temperature controlling mechanism for directly controlling the temperature of the showerhead at a temperature of 200° C. to 400° C., a remote plasma discharge device provided outside the reaction chamber, and a radio-frequency power source electrically connected to either of the susceptor or the showerhead.

This invention provides a new film forming method in which, on the occasion that pressure is decreased by pressure decreasing means which was connected to a film forming chamber, and a film is formed by evaporating an organic compound material from a deposition source in the film forming chamber, minute amounts of gas (silane series gas) which comprises smaller particles than particles of the organic compound material, i.e., a material with a smaller atomic radius are flowed, and the material with a small atomic radius is made to be included in an organic compound film.

The invention belongs to the technical field of cleaning robots, and particularly relates to a dirt recognizing system of a cleaning robot and a cleaning method. The dirt recognizing system, namely a detecting unit, comprises a dust recognizing device and an attachment recognizing device. The dust recognizing device, namely a dust sensor, comprises a light transmitting element and a light receiving element. The dirt recognizing device comprises an image acquiring unit and an image processing unit. The cleaning method includes dust suction and floor mopping, dust suction time and power are determined by dust quantity detected in real time, and floor mopping frequency is determined by the quantity of attachment on floors. The system has an ability of actively recognizing dirt, cleaning force and cleaning time can be adjusted in real time according to the dirt quantity, and accordingly the floors are cleaned efficiently on the premise of guaranteeing cleaning quality.

A method and apparatus for cleaning the surfaces of a pool by a programmed robotic pool cleaner initially set at an arbitrary position in the poll. The pool can be of any standard or non-standard shapes, and the surfaced with any conventional materials. The robot is advanced until it encounters a first obstacle (1), then reverses direction and advances along the same path to an opposing second obstacle (2) to form a first path between the opposing first (1) and second (2) obstacles. At the second obstacle (2), the robot reverses and advances to a predetermined point (A) between the opposing obstacles along said first path. At the predetermined point (A), the robot stops and turns in a first direction at a predetermined angle of turn, and repeats the above steps along additional paths until the sum of the predetermined angle of turns generates a quantity of paths sufficient to substantially clean the pool surfaces.

Provided is a suitable cleaning method of a porous semiconductor substrate without collapse of the porous structure due to cavitation or resonance. In a cleaning method of a porous surface of a semiconductor substrate having the porous structure at least in the surface, cleaning for removing dust particles adhering to the porous surface of the substrate takes place with pure water on which a high-frequency wave with a frequency in the range of from 600 kHz to 2 MHz is superimposed.

Cleaning solutions and cleaning methods targeted to particular substrates and structures in semiconductor fabrication are described. A method of cleaning fragile structures having a dimension less than 0.15 um with a cleaning solution formed of a solvent having a surface tension less than water while applying acoustic energy to the substrate on which the structures are formed is described. Also, a method of cleaning copper with several different cleaning solutions, and in particular an aqueous sulfuric acid and HF cleaning solution, is described. Also, methods of cleaning both sides of a substrate at the same time with different cleaning solutions applied to the top and the bottom are described.

This invention is directed to a method for etching films on semiconductor substrates and cleaning etch chambers. The method includes an improved processing sequence and cleaning method where residue formed from processing a previous substrate are cleaned by the etching process used to remove an exposed layer of material from the present substrate. The process provides improved substrate throughput by combining the step to clean residue from a previous substrate with an etch step conducted on the present substrate. Applicants have found the method particularly useful in processing structures such as DRAM stacks, especially where the residue is formed by a trench etched in the previous silicon substrate and the exposed layer etched from the present substrate is silicon nitride.

The present invention is a composition and cleaning method for use in semiconductor processes wherein the compositions comprises at least one amidoxime compound.

The invention relates to an intelligent cleaning robot based on an advanced path programming technology and a cleaning method thereof. An external environment information detection system installed on a robot body, a real-time positioning system, a main control system, a motor driving module and a power supply are included. The external environment information detection system is used for detecting external environment information. The real-time positioning system is used for acquiring a real-time position where the robot is located. The main control system is used for acquiring external environment information and establishing a grid map. Through combining the grid map and the real-time position, a cleaning path is programmed. The motor driving module is used for driving the robot to operate according to the programmed cleaning path and clean. The power supply is used for providing power for the main control system and the motor driving module. A path programming technology of boundary cleaning, rectangular manufacturing, parallel paving and cleaning and obstacle consideration is used to design the cleaning path, a current position is determined in real time, cleaning time is saved and simultaneously a largest coverage rate to an cleaning environment is realized.

The invention discloses a household cleaning robot capable of establishing a map by self and a cleaning method. The household cleaning robot comprises a casing, a control center arranged in the casing, a power supply module, a storage unit, a camera, a lighting alarm device, an ultrasonic wave sensor, an infrared sensor, a photosensitive sensor, a wireless module and an RFID reader-writer, wherein the ultrasonic wave sensor, the infrared sensor and the photosensitive sensor are respectively connected with the control center, and the wireless module and the RFID reader-writer are connected with the control center. The household cleaning robot further comprises a plurality of RFID labels bonded under the periphery of a wall, wherein the RFID labels are used for recording position coordinate information and are active RFID labels. The cleaning robot can establish the indoor two-dimensional map to achieve the indoor location function and acquire the coordinate points in a room. Walking areas and non-walking areas are marked on the two-dimensional map, so that the cleaning robot can quickly determine a cleaning path and accurately reach a target to be cleaned. To hygienic dead angles which cannot be cleaned, the cleaning robot is manually operated and controlled to automatically store operation and control data. When the hygienic dead angles are cleaned again, the stored operation and control data can be called to clean the target.

A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by contacting the microelectronic device structure with a cleaning gas including a reactive halide composition, e.g., XeF2, SF6, SiF4, Si2F6 or SiF3 and SiF2 radicals. The method may be carried out in a batch-cleaning mode, in which fresh charges of cleaning gas are successively introduced to a chamber containing the residue-bearing microelectronic device structure. Each charge is purged from the chamber after reaction with the residue, and the charging / purging is continued until the residue has been at least partially removed to a desired extent. Alternatively, the cleaning gas may be continuously flowed through the chamber containing the microelectronic device structure, until the noble metal residue has been sufficiently removed.

An apparatus and method for cleaning a body cavity, such as a portion of the GI tract, are disclosed. The apparatus can include a colonoscope having viewing optics and a liquid conduit with at least one outlet. The outlet can be positioned to direct a liquid to clean the colon or other cavity in the region being viewed.

The present invention is a method of use of a novel cleaning solution in a single wafer cleaning process. According to the present invention the method involves using a cleaning solution in a single wafer mode and the cleaning solution comprises at least ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. Moreover, the present invention also teaches a method of combining an ammonia hydroxide, hydrogen peroxide, and chelating agent step with a short HF step in a fashion that minimizes process time in a way that the entire method removes aluminum and iron contamination efficiently without etching too much oxide. The single wafer cleaning processes may also be used to increase the yield of high-grade reclaimed wafers.

An object of the present invention is to provide a water purification cartridge in which the decreased function of the hollow fiber membranes is restored by cleaning and of which the operating cost of a purification treatment of raw water decreases. The present invention provides a water purification cartridge comprising a hollow fiber membrane element comprising a plurality of hollow fiber membranes bent in a U-shape and a potting material for binding both ends of the hollow fiber membranes so as to maintain the open states of the hollow fiber membranes and a cylindrical hollow fiber membrane case for covering the hollow fiber membranes, wherein the hollow fiber membrane element is detachably installed in the hollow fiber membrane case so that a fluid-tight state is maintained between the primary side and the secondary side of the hollow fiber membranes.

A head cleaning method of wiping and cleaning a nozzle surface of a head with a band-shaped liquid absorbing body by, while pressing and abutting a pressing member on which the liquid absorbing body that travels is wrapped against the nozzle surface of the head, sliding the pressing member over the nozzle surface of the head, includes: a first cleaning step of wiping and cleaning the nozzle surface of the head with a non-wet region of the liquid absorbing body; a wet region forming step of forming a wet region on the liquid absorbing body; and a second cleaning step of wiping and cleaning the nozzle surface of the head with the wet region of the liquid absorbing body.

Methods (100) are provided for fabricating a ferroelectric capacitor structure including methods (128) for etching and cleaning patterned ferroelectric capacitor structures in a semiconductor device. The methods comprise etching (140, 200) portions of an upper electrode, etching (141, 201) ferroelectric material, and etching (142, 202) a lower electrode to define a patterned ferroelectric capacitor structure, and etching (143, 206) a portion of a lower electrode diffusion barrier structure. The methods further comprise ashing (144, 203) the patterned ferroelectric capacitor structure using a first ashing process, performing (145, 204) a wet clean process after the first ashing process, and ashing (146, 205) the patterned ferroelectric capacitor structure using a second ashing process directly after the wet clean process at a high temperature in an oxidizing ambient.

A cleaning robot a dirt recognition device thereof and a cleaning method of the robot are disclosed. The recognition device includes an image collecting module and an image processing module. The image collecting module may be used for collecting the image information of the surface to be treated by the cleaning robot and sending the image information to the image processing module. The image processing module may divide the collected image information of the surface to be treated into N blocks, extract the image information of each block and process the image information in order to determine the dirtiest surface to be treated that corresponds to one of the N blocks. Through the solution provided by the present invention, the cleaning robot can make an active recognition to the dirt such as dust, so that it can get into the working area accurately and rapidly.