356results about How to "Uniform removal" patented technology

In a plasma processing apparatus, a mounting table is provided in a processing chamber, and a remote plasma generating unit is configured to generate an excited gas by exiting a hydrogen-containing gas. The remote plasma generating unit has an outlet for discharging the excited gas. A diffusion unit is provided to correspond to the outlet of the remote plasma generating unit and serves to receive the excited gas flowing from the outlet and diffuse the hydrogen active species having a reduced amount of hydrogen ions. An ion filter is disposed between the diffusion unit and the mounting table while being separated from the diffusion unit. The ion filter serves to capture the hydrogen ions contained in the hydrogen active species diffused by the diffusion unit and allow the hydrogen active species having a further reduced amount of hydrogen ions to pass therethrough the mounting table.

A plasma processing apparatus wherein a layer structure consisting of plural layers formed in stack one upon another on a semiconductor wafer placed on the sample holder located in the process chamber, is etched with plasma generated in the process chamber by supplying high frequency power to the electrode disposed in the sample holder, the apparatus comprising a ring-shaped electrode disposed above the electrode and around the periphery of the top portion of the sample holder, an outer circumferential ring of dielectric material disposed above the ring-shaped electrode and opposite to the plasma, and a power source for supplying power at different values to the ring-shaped electrode depending on the sorts of layers of the layer structure.

A method for conformal dry etch of a liner material in a high aspect ratio trench is achieved by depositing or forming an inhomogeneous passivation layer which is thicker near the opening of a trench bat thinner deep within the trench. The methods described herein use a selective etch following formation of the inhomogeneous passivation layer. The selective etch etches liner material faster than the passivation material. The inhomogeneous passivation layer suppresses the etch rate of the selective etch near the top of the trench (where it would otherwise be fastest) and gives the etch a head start deeper in the trench (where it would otherwise be slowest). This method may also find utility in removing bulk material uniformly from within a trench.

The invention modulates the air volume in foam cores of cushioning support devices and any other support apparatus using foam or similar materials. The foam core can be incrementally modulated to realize an infinite number of comfort levels as to softness and support firmness. The core consists of self-inflating open-cell flexible polyurethane foam and is completely sealed within an enclosure fitted over it, with one or more valves installed in the side walls which communicate with the outside air. Through the valves air is selectively withdrawn from the foam core, allowing the foam's density to increase. The invention uses relatively inexpensive foam, but through air volume modulation achieves a tactile feel of supreme softness for the user, without giving up the necessary firmness to support the body, as happens with very soft foam (bottoming-out or hammock-effect). When air is extracted from a self-inflating foam core, the surface of the core will soften uniformly while maintaining its support firmness. Contrary to this, when pressure is exerted on, for example, traditional coil spring core mattresses, their surface will harden. Integral part of the invention is a device using balanced springs in valve assemblies to avoid compression set, an irreversibly solid state of totally air-depleted foam.

Methods and apparatus for heating an object 9 that includes an absorbed medium. A method embodiment comprises: placing the object 9 including the medium into an enclosure 16; initiating a heating process by subjecting the object 9 and medium to a capacitive AC electrical field generated by an RF power source 2 at a single low frequency; controlling the heating process by taking real time measurements; and making real time adjustments to the RF power source 2 in response to the real time measurements. The object 9 substantially absorbs the medium in a first “cool” state, and therefore has a maximum weight in the first “cool” state. The object 9 is substantially free from the medium in a second “heated” state, due to substantial release of the medium from the object 9. The released medium is evaporated during the heating process. The heating process is completed when the object 9 is substantially transitioned into the second “heated” state. The method further comprises causing an air flow 11 inside the enclosure 16 to carry away evaporated medium out of the enclosure 16.

Detergent or bleach composition comprising a host-guest complex of diacyl and/or tetraacyl peroxide bleaching species in the form of an aggregate having a weight average particle size of at least 106 μm and an anti-deposition polymer.

The invention relates to a device (10) for the manufacture or repair of a three-dimensional object, comprising at least one construction chamber (12) for a successive solidification of at least one solidifiable material layer by the layer in predefined regions for the layer-by-layer buildup of the three-dimensional object or for the layer-by-layer repair of individual regions of the three-dimensional object within the construction chamber (12), and at least one inlet nozzle (22, 26) and at least one suction nozzle (24) for a process gas, wherein the inlet nozzle (22, 26) and the suction nozzle (24) are arranged in such a way that a gas flow (30) that passes at least partially over a construction platform (14) formed in a construction chamber (12) is created.

A method and apparatus for controlling CMP (Chemical Mechanical Polishing) for semiconductor substrates includes an infrared camera for detecting and mapping in two dimensions the thermal image of the polishing pad during CMP. The thermal image of the polishing pad is then analyzed and used to control the process parameters of the CMP process. Analysis of the thermal image of the polishing pad allows real time endpoint detection of the CMP process and, also, real time adjustment of process parameters to improve the uniformity of removal of material across the semiconductor substrate.

The invention relates to a processing method for controlling processing deformation of a titanium-aluminum alloy thin-wall case. The technical scheme of the processing method is as follows: the processing method comprises the steps as follows: a primary rough turning process, a primary heat treatment process, a secondary rough turning process, a secondary heat treatment process, a fine turning process, a third heat treatment process and a finish turning process. According to the processing method for controlling the processing deformation of the titanium-aluminum alloy thin-wall case, reasonable processing parameters are set, and an appropriate cutter is used, so that the processing deformation of the titanium-aluminum alloy thin-wall case is controlled, and the processing requirement is met.

The invention provides a three-dimension laser fine machining system and method for crisp and hard materials. The method comprises the steps that a laser scanning machining scheme according to the model of a to-be-machined part, the model of a machining pattern and the machining requirements, specifically, the scheme comprises the process of determining the laser machining parameters and the process of determining the number of machining layers; scanning filling schemes corresponding to the machining layers are made in the pattern filling area; the laser focus is adjusted dynamically in the machining process, light spots are made to keep focusing in each machining position, and focus spots are uniform and coincident; the laser scanning filling schemes are changed every time one or more layers of materials are scanned and removed; and after one or more layers are scanned in the pattern filling area, laser contour scanning is conducted in the pattern contour area one or more times. The three-dimension laser fine machining system and method for the crisp and hard materials can achieve high-precision and efficient machining of the crisp and hard materials by making full use of the various advantages of fine light spot laser scanning machining.

In a replacement gate approach, the dielectric cap layers of the gate electrode structures are removed in a separate removal process, such as a plasma assisted etch process, in order to provide superior process conditions during the subsequent planarization of the interlayer dielectric material for exposing the sacrificial gate material. Due to the superior process conditions, the selective removal of the sacrificial gate material may be accomplished with enhanced uniformity, thereby also contributing to superior stability of transistor characteristics.

The invention provides a technology for preparing a diethylene triamine pentacetic acid modified polyvinylidene fluoride separation membrane by a physical blending/phase transition technology and a chemical grafting blending/ phase transition technology. The technology is as follows: reagents such as diethylene triamine pentacetic acid, polyvinylidene fluoride, melamine, dimethyl sulfoxide, acrylic acid, polyvinylpyrrolidone and the like are taken as raw materials; diethylene triamine pentacetic acid polyamino and polycarboxylic acid compound is uniformly mixed in a polyvinylidene fluoride separation membrane and resin respectively by the physical blending/phase transition technology and the chemical grafting blending/ phase transition technology. The technology improves the hydrophobic properties of the conventional polyvinylidene fluoride micro-filtration separation film and the resin, realizes metallic ions in waste water, and has the advantages of simple operation, uniform blending and the like. The diethylene triamine pentacetic acid modified polyvinylidene fluoride separation membrane and the resin increase the purification efficiency of drinking water, realize the resource utilization of the heavy metal in the industrial wastewater, and expand the application field of the polyvinylidene fluoride micro-filtration separation film.

A substrate cleaning method can uniformly removing particles from substrates at a high removing efficiency. The substrate cleaning method includes the steps of immersing substrates W in a cleaning liquid in a cleaning tank 12, and generating ultrasonic waves in the cleaning liquid contained in the cleaning tank. A region in the cleaning tank toward which the cleaning liquid is supplied is varied with respect to a vertical level in the step of generating ultrasonic waves in the cleaning liquid while the cleaning liquid is being supplied into the cleaning tank.

In an exhaust gas purifying system (1) which is equipped with a NOx occlusion reduction type catalyst (11) and an oxidation catalyst (12) set on the upstream side of the catalyst (11) and in which sulfur purge control for regenerating the sulfur-poisoned catalyst (11) is conducted, in conducting the sulfur purge control, the air fuel ratio control for sulfur purge is conducted after the temperature difference (ΔTIO) between the inlet side and outlet side of the catalyst (11) has been reduced to a prescribed level (ΔT0) or below by raising the exhaust temperature. According to the invention, the sulfur poison on the catalyst (11) can be uniformly removed in the sulfur-purge regeneration control, whereby the service life of the catalyst (11) can be protected from being shortened by sulfur poisoning. Further, the catalyst (11) can be protected from the thermal deterioration caused by partial temperature rise inside the catalyst (11) on its downstream side, so that the service life of the catalyst (11) can be protected from being shortened by thermal deterioration.

The invention discloses a magneto-rheological polishing method and device. The magneto-rheological polishing method comprises the steps that surface type information of a workpiece is known; the position and polishing interval of the polishing tool are determined; the polishing interval is filled with magneto-rheological fluid; according to surface shape information of a polishing area and linear velocity distribution of all points in the polishing area, polishing pressure distribution is calculated when the removal rate is even; magnetic field distribution is obtained according to the pressure distribution through inverse solution; according to the obtained magnetic field distribution model, coil voltages of three layers of concentric circular electromagnets are changed respectively, so that magnetic field distribution in the radius direction meets the requirement; polishing is carried out. According to the magneto-rheological polishing method, the concentric circular electromagnets are of a nested structure and supply power to a collecting ring respectively, and therefore the purposes that magnetic fields at the same radius are the same in intensity and intensity of magnetic fields at different radii can be controlled separately are achieved.

In a method for the laser drilling of holes in a circuit substrate with the aid of a perforated mask, a laser beam is moved in the region of the perforated mask on a circular path. The center point of the region lies concentrically with respect to the set position of the respective hole in the mask. Further, the diameter of the region is smaller than the diameter of the hole. At the same time, the diameter of the laser beam spot is chosen to be large enough that it always covers the center point of the perforated mask during the circular motion. As a result, an energy distribution of the laser energy, which is as uniform as possible, is achieved in the region of the perforated mask.

A method of removing photoresist film with high efficiency of removal and friendliness with the environment while reducing the material consumption and the cost for the ventilation facility, and an apparatus used for the method are provided. Particularly the present invention provides a method of removing a photoresist film provided on a surface of a substrate, comprising steps of in a sealed system, disposing the substrate surface having the photoresist film to contact with a photoresist film removing solution, making ozone exist in gas phase and/or solution phase in the vicinity of the liquid surface of the photoresist film removing solution, and changing a relative position between the surface of the substrate and the liquid surface of the solution to decompose or remove the photoresist film from the substarate, characterized in that the relative position is changed continuously or intermittently within a range between a position where a bottom edge of the substrate is present above the liquid surface of the solution, and another position where a top edge of the substrate is present below the liquid surface of the solution. The present invention also provides an apparatus used for the method.

A semiconductor device includes a semiconductor substrate, a diffusion layer conductive film formed on the semiconductor substrate, an interlayer insulating film layered on the semiconductor substrate, an interconnect pattern and a via pattern formed in the interlayer insulating film, a plurality of circuit regions formed in the semiconductor substrate, and a scribe region formed around the circuit regions and separating the circuit regions from each other. The diffusion layer conductive film is not formed at least in a region to which laser light is emitted in the scribe region.

In a fuel cell, a porous portion is formed in a separator. At a surface of the porous portion opposite to a surface where a reactant gas passage is formed, a cooling gas passage is formed. The cooling gas passage may be fluidly connected to a reactant gas supply passage for supplying reactant gas to the fuel cell. The cooling gas passage is controllable in flow amount. The porous portion is formed only in a separator portion where a downstream portion of the reactant gas passage is located. At a separator portion where an upstream portion of the reactant gas passage is located, a coolant passage is formed. A rib and a rib-bottom portion have a great porosity. A groove may be filled with porous material. The porous portion may be replaced by a water exchange portion. A portion of the separator other than the region of the porous portion may be made by porous material. Due to these, a fuel cell can be obtained where removal of product water is improved, product water can be utilized for humidifying gas, and product water can be uniformly removed.

The invention discloses a force control method for robotic abrasive belt grinding machining for a blade. The force control method for robotic abrasive belt grinding machining for the blade comprises the following steps: modulation and processing for voltage signals; compensation for a converted force; and a force control strategy. The modulation and processing for the voltage signals comprises thefollowing steps: acquiring the voltage signals of six channels of a sensor; carrying out software filtering on the acquired voltage signals; and converting the filtered voltage signals to force signals. The compensation for the converted force comprises the own zero drift compensation of the sensor and gravity compensation for a robotic end load. The force control strategy comprises hybrid force-position control and PI/PD control. The force control method for robotic abrasive belt grinding machining for the blade is capable of increasing the efficiency of the grinding machining, avoiding thecase of low consistency of manual grinding machining, realizing constant-force grinding machining, and keeping a uniform and consistent removal amount of a surface material, thereby improving the surface consistency of the blade while improving the machining accuracy and surface quality.

Provided is a method of manufacturing an organic electroluminescence display device including an emission region, the emission region including multiple organic compound layers arranged therein, each of the organic compound layers being provided between a pair of electrodes and including at least an emission layer, the method including: forming in the entire emission region an organic compound layer which is insoluble in water; forming on the organic compound layer a mask layer containing a water-soluble material in a predetermined pattern; removing a part of the organic compound layer which is formed in a region which is not covered with the mask layer; removing the mask layer; drying the organic compound layer; and forming a common layer on the organic compound layers, in which the steps from the drying of the organic compound layer to the forming of a common layer are carried out in a vacuum.

A bubble column-type slurry bed reaction system is provided in which an operating system, which synthesizes liquid hydrocarbons by the Fischer-Tropsch (FT) synthesis reaction and separates and derives a catalyst and liquid hydrocarbon products from a slurry composed of gas, liquid and solid phases, can be simplified, and deterioration of catalyst particles caused by attrition and so forth can be reduced. In this FT synthesis reaction system, a bubble column-type slurry bed Fischer-Tropsch synthesis reaction process, in which synthesis gas supplied continuously from the bottom of a reactor and suspended catalyst particles are contacted to form liquid hydrocarbons, gaseous hydrocarbons and water, a process in which a slurry of suspended liquid products formed in the Fischer-Tropsch synthesis reaction process and catalyst particles moves from the reactor to the lower portion of a separation vessel through a downwardly inclined transfer pipe to separate the catalyst particles and gaseous products, a process in which the liquid products formed in the Fischer-Tropsch synthesis reaction process is sent to the separation vessel through a horizontal connecting pipe installed above the downwardly inclined transfer pipe and derived from its apex, a process in which liquid products are derived from the separation vessel, and a process in which a

slurry in which catalyst particles are concentrated is derived from the bottom of the separation vessel and circulated to the bottom of the reactor, are driven by the driving force of synthesis gas introduced from the bottom of the reactor and which rises through the slurry bed reactor without using an external drive power source for circulation, and the formed liquid hydrocarbon products, gaseous hydrocarbon products and water are separated and derived without using an external drive power source for separation.