1313 results about "Contact electrode" patented technology

The invention discloses a back contact electrode structure, a back contact solar cell and a photovoltaic module, and belongs to the technical field of solar cells. The electrode structure comprises current collection electrodes, current collection electrodes, current collection points and current collection areas, the current collection electrodes extend in the first direction, and the current collection electrodes with different polarities are alternately designed at intervals in the second direction; the bus electrodes are distributed on the two sides of the battery substrate in the second direction, the bus electrodes with the same polarity are distributed on one side of the edge of the battery substrate, the bus electrodes with the other polarity are distributed on the other side of the edge of the battery substrate, and the bus electrodes with different polarities are distributed in an array mode in the first direction and are coupled with the part, extending in the first direction, of the collector electrodes with the same polarity; the collector electrodes at least partially extending in the first direction have a segmented design, and the length of the collector electrodes on the two sides of the battery substrate in the first direction is W1lt; and the other collector electrodes are W2 in length.

A light emitting device may include: a substrate; a light emitting element located on the substrate and configured to emit light; a first electrode and a second electrode spaced from each other with the light emitting element interposed therebetween; a color conversion layer located on the substrate and configured to convert light emitted from the light emitting element into light having a specific color; a first contact electrode configured to electrically couple the first electrode with a first end of the light emitting element; and a second contact electrode configured to electrically couple the second electrode with a second end of the light emitting element. In a plan view, the color conversion layer may be spaced from the light emitting element and overlaps with at least one of the first and the second contact electrodes.

The invention provides a solar cell, a preparation method thereof and a photovoltaic module, and relates to the field of photovoltaic technology. The solar cell comprises a silicon substrate, a functional layer and an electrode structure, the plurality of contact electrodes are oligomerized in a first direction and a second direction which are perpendicular to each other to form a contact electrode group; at least one contact electrode group is composed of a plurality of parts in the second direction; at least one part in the second direction comprises at least two contact electrodes; in the first direction, the sum of the sizes of all the contact electrodes of at least one part and the intervals between the contact electrodes is M; the total number of the contact electrodes of at least one part is n; in the second direction, the distance between the center of the first contact electrode of the at least one part and the center of the tail contact electrode in the at least one part is Hn; (1 / (2n)) * Hn < = M. Electric connection of the transmission electrode and the contact electrode can be ensured, a process window is enlarged, and enough offset space is provided in the transmission electrode setting process.

The embodiment of the invention discloses a gout detection hearing aid system for monitoring uric acid level in real time by using a sweat sensor, and relates to the technical field of hearing aid devices and algorithms. The hearing aid system comprises a hearing aid, a processor and a processor, the outer side of the flexible sweat sensor patch is used for being attached to the skin behind the ear, the inner side of the flexible sweat sensor patch is attached to the outer surface of the hearing aid, and the flexible sweat sensor patch is electrically connected with the hearing aid chip through a contact electrode; sweat of the skin behind the ear flows into the micro-channel through the sweat collecting hole, after an electric field is applied to the detection electrode, the level of uric acid in the micro-channel is measured through the Raman spectrum technology, and the uric acid is transmitted to the interior of the hearing-aid chip to be processed. And the disease monitoring system is used for recording detection data, analyzing gout risks and linking the hearing aid to carry out in-ear early warning when the data is abnormal. The system is noninvasive and portable, and can solve the problem of user hearing and gout management at the same time.

A light-emitting device includes: a substrate; a unit light-emitting area disposed on the substrate; first and second electrodes disposed in the unit light-emitting area to be separated from each other; a plurality of rod-shaped LEDs disposed between the first and second electrodes; a reflective contact electrode disposed on opposite ends of the rod-shaped LEDs to electrically connect the rod-shaped LEDs to the first and second electrodes; and a light-transmitting structure disposed between the first and second electrodes and extending to cross the rod-shaped LEDs.

A composite catalyst includes a nickel foam and cobalt, copper, or both electrodeposited on the nickel foam. Making the composite catalyst includes contacting the nickel foam with an aqueous solution comprising copper, cobalt, or both, and electrodepositing nanodomains of copper, cobalt, or both, respectively, on the nickel foam. Electrochemically converting nitrate to ammonia includes contacting an electrode and a cathode comprising the composite catalyst in an electrochemical cell with an aqueous solution including nitrate, adsorbing the nitrate onto the copper, the cobalt, or both, reducing the nitrate to yield nitrite, and reducing the nitrite to yield ammonia.

A light emitting device, includes: a substrate; a light emitting element on the substrate, the light emitting element having a first end portion and a second end portion arranged in a longitudinal direction; one or more partition walls disposed on the substrate, the one or more partition walls being spaced apart from the light emitting element; a first reflection electrode adjacent the first end portion of the light emitting element; a second reflection electrode adjacent the second end portion of the light emitting element; a first contact electrode connected to the first reflection electrode and the first end portion of the light emitting element; an insulating layer on the first contact electrode, the insulating layer having an opening exposing the second end portion of the light emitting element and the second reflection electrode to the outside; and a second contact electrode on the insulating layer.

The invention discloses a three-dimensional silicon-based macroscopic graphene composite wide-spectrum detector and a preparation method, and the photoelectric detector comprises a silicon layer which is provided with an insulating dielectric layer, the insulating dielectric layer and the silicon layer are provided with concentric grooves, a top electrode is arranged above the insulating dielectric layer, and a bottom contact electrode is arranged below the silicon layer; the three-dimensional silicon nano strip is arranged in the groove in the silicon layer and is connected with the silicon layer; the macroscopic assembly graphene is arranged above the top electrode and the insulating dielectric layer, is in direct contact with the top electrode and the insulating dielectric layer, and is in contact with the three-dimensional silicon nano strip to form a Schottky node; and the part in the groove area of the insulating dielectric layer is patterned to form the macroscopic assembly graphene nano strip. The invention relates to the technical field of photoelectric detection, realizes the composition of a macroscopically assembled graphene nanostructure and a silicon nanostructure for the first time, and solves the problem that the existing silicon-based graphene photoelectric detector has weak detection performance in an ultra-wide spectral range, especially in an infrared band.

Methods and systems for monitoring the activity of electrogenic networks are described. One representative system includes an array of electrode coupled to an analyzer having a stimulator and a receiver. The electrode is placed in contact with an electrogenic cell. The electrodes can be shaped as nanowires, tubes, cavities and / or cones. The analyzer may be configured to operate in a voltage stimulation mode, in which the cells are stimulated via voltages and monitored via current, or in a current stimulation mode, in which the cells are stimulated via currents and monitored via voltages. The analyzers may be arranged as single-stage amplifiers, and may include a feedback loop shared between the stimulation signal path and the sensing signal path. The feedback loop may be arranged to provide overlapping stimulation and sensing of the electrogenic network's cells.

The invention relates to the technical field of oil field reservoir research, in particular to a fracturing fracture imaging physical simulation method and system combined with non-uniform contact electrodes, and the method comprises the steps: carrying out the resistance modal detection at the current time step through a low-frequency excitation signal in the fracture propagation simulation process, and obtaining a corresponding electric signal; obtaining a conductive fluid distribution result of the rock core fracturing test piece at the current time step by using the conductive fluid distribution inversion model; and fitting and comparing the electric field distribution result of the current time step with the conductive fluid distribution result of the current time step, and outputting the fracture parameters and the conductive fluid distribution result of the rock core fracturing test piece at the current time step based on the fitting and comparison result. According to the method, the electrical property change caused by the natural fracture and the fluid contained in the natural fracture is directly sensed in situ, the electrical signal is acquired, the response delay is reduced, the conductive fluid distribution inversion model is constructed by combining prior knowledge and deep learning, and the precision and reliability of conductive fluid distribution inversion are effectively improved.

The tellurium-cadmium-mercury double-layer component heterogeneous planar junction detector comprises a substrate material layer, an n-type absorption layer, a surface n-type wide band gap heterogeneous layer, a passivation layer and a contact electrode layer which are arranged in a stacked mode. The surface n-type wide band gap heterogeneous layer is a wide band gap heterogeneous layer prepared on the surface of the n-type absorption layer based on a mercury-rich vertical liquid phase epitaxy technology, and the residual impurities are n-type; the passivation layer covers at least partial areas of the isolation region and the p-type injection region in the orthographic projection direction, and the part, not covering the p-type injection region, of the passivation layer is a contact hole; the contact electrode layer is in contact with the p-type injection region, and the orthographic projection area of a contact electrode is larger than and covers the contact hole. According to the invention, interface mutual diffusion is realized in the growth process of the n-type wide bandgap heterogeneous layer, and the mercury cadmium telluride p-on-n planar heterojunction device is realized through As ion implantation. Tunneling current and surface electric leakage can be effectively suppressed, dark current can be reduced, and device performance can be improved.

The invention discloses an MEMS composite film stress gradient measuring device and method. The measuring device comprises a V-shaped thermal actuator structure, a displacement measuring structure connected with the V-shaped thermal actuator structure and a multi-layer cantilever beam structure. The method comprises the steps that a V-shaped thermal actuator structure is used for pushing a displacement measurement structure to move towards a multi-layer cantilever beam structure, and when a contact electrode of the displacement measurement structure makes contact with a to-be-measured beam of the multi-layer cantilever beam structure, a horizontal displacement value s is obtained through reading of the displacement measurement structure; calculating the equivalent stress gradient of the composite film according to the geometric dimension of the measuring device, the horizontal displacement value s and the Young modulus of each layer of film; the MEMS composite film stress gradient measuring device and method have the advantages of being easy to operate, low in cost and high in measuring speed, and can be used for parameter monitoring of a process line.

A touch panel includes: a base substrate having at least two mounting holes, and a touch function layer including first and second touch units. Each first touch unit includes first touch electrodes located in a same layer, and each second touch unit includes second touch electrodes located in a same layer and insulated from the first touch electrodes. The touch function layer is hollowed out at positions corresponding to the at least two mounting holes and has a gap region at a position corresponding to a region between two adjacent mounting holes. In a first touch unit, first touch electrodes located in the gap region serve as a first gap electrode and a second gap electrode. In a second touch unit, second touch electrodes located in the gap region serve as a third gap electrode located between the first and second gap electrodes and a fourth gap electrode.

A system to perform electroporation ablation of target tissue in a chamber of a patient's heart, the system comprising a catheter and a controller. The catheter includes an electrode assembly having a plurality of ablation electrodes, wherein the catheter is adapted to position the electrode assembly in contact with the target tissue. The controller is configured to identify, from among the plurality of ablation electrodes, a first subset of ablation electrodes that are in contact with the target tissue, and a second subset of ablation electrodes that are not in contact with the target tissue, and to apply a pulsed electrical signal to the first subset of ablation electrodes and not to the second subset of ablation electrodes.

The invention discloses a multi-mode reconfigurable diamond solar-blind ultraviolet photoelectric transistor and a preparation method thereof, and aims to solve the problem of separation of sensing, storage and calculation frameworks of an existing artificial vision system. According to the diamond solar blind ultraviolet photoelectric transistor, a terminal is arranged on the surface of a diamond substrate, a first metal film layer is deposited on the upper surface of the diamond substrate to serve as a first contact electrode, the first contact electrode is Schottky contact, and a second contact electrode is a metal probe. The second contact electrode is in needle point contact with the upper surface of the diamond substrate, a second metal film layer is deposited on the lower surface of the diamond substrate to serve as a third contact electrode, and the third contact electrode is Schottky contact. According to the reconfigurable diamond solar blind ultraviolet photoelectric transistor, different functions of an avalanche detector, an optical memory, visual synapse and the like are integrated in one device, and large gain rising of the diamond detector and multi-mode intelligent sensing of a single device are achieved.

A semiconductor memory device includes a plurality of word lines, a first select gate line, a second select gate line, a first semiconductor layer, a third select gate line, a fourth select gate line, a second semiconductor layer, and a word line contact electrode. The first select gate line and the third select gate line are farther from the substrate than the plurality of word lines. The second select gate line and the fourth select gate line are closer to the substrate than the plurality of word lines. The first semiconductor layer is opposed to the plurality of word lines, the first select gate line, and the second select gate line. The second semiconductor layer is opposed to the plurality of word lines, the third select gate line, and the fourth select gate line. The word line contact electrode is connected to one of the plurality of word lines.

A display panel and a display device are disclosed. The display panel includes an array substrate, an electrode layer disposed on the array substrate, a light-emitting layer disposed on the electrode layer, and a cathode layer disposed on the light-emitting layer. The electrode layer includes an anode and a contact electrode disposed apart from each other on the array substrate. The contact electrode has a pattern, the contact electrode contacts the cathode layer through the light-emitting layer.

Disclosed are a flip-chip light-emitting element and a light-emitting device. The flip-chip light-emitting element includes an epitaxial layer, a contact electrode, an insulating layer and a pad electrode. The epitaxial layer includes a first semiconductor layer, an active layer and a second semiconductor layer, and a contact electrode is formed on the surface of the epitaxial layer. An insulating layer is formed on the epitaxial layer, and covers the surface, the edge area and the sidewall of the epitaxial layer. A pad electrode is formed on the insulating layer and connected to the contact electrode, and the pad electrode at least covers part of the sidewall of the epitaxial layer. When the flip-chip light-emitting element of the present disclosure is solidified through solder paste, it is possible to prevent Sn and Ag from migrating and ascending into the active layer, thereby improving the reliability of the flip-chip light-emitting element.

The invention relates to a preparation method of a local ITO interconnected perovskite-TOPCon laminated cell, which comprises the following steps: taking an n-type monocrystalline silicon wafer as a substrate, cleaning and texturing, diffusing boron on the back to form a P + emitter, oxidizing at high temperature, and treating the surface through acid etching and alkali polishing; sequentially preparing a tunneling oxide layer and a phosphorus-doped polycrystalline silicon layer on the front surface, annealing and crystallizing, depositing an aluminum oxide film and a multi-layer silicon nitride film on the back surface after cleaning, and depositing a single-layer silicon nitride film on the front surface; preparing a back metal electrode, etching according to a designed pattern to remove a local silicon nitride film on the front surface, sequentially preparing an ITO interconnection layer, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer and an ITO transparent conductive layer on the front surface, and finally preparing a front metal electrode and solidifying to form a contact electrode. According to the invention, the problems of back corrosion risk, effective area loss and tedious process in the existing method are solved, full-size manufacturing is realized, the cell performance is improved, and industrialization is easier.

The invention discloses a chip structure capable of simultaneously improving deep ultraviolet LED crystal quality and injection efficiency and a preparation method. The chip structure comprises a substrate, a buffer layer is arranged on the substrate, a multi-quantum well layer is arranged above the buffer layer, an n-type doping layer is arranged on the side face of the multi-quantum well layer, and an n-type contact electrode is arranged above the n-type doping layer. A plurality of p-type doped layer plugs are inserted in the multi-quantum well layer, a p-type doped layer is arranged above the p-type doped layer plugs and the multi-quantum well layer, and a p-type contact electrode is arranged on the p-type doped layer; a passivation layer is arranged on the upper surface of the whole structure, and the thickened metal electrode penetrates through the passivation layer and is located on the n-type contact electrode and the p-type contact electrode. According to the invention, insufficient hole injection in the multi-quantum well layer and the crystal quality of the multi-quantum well layer can be improved at the same time.

A device structure includes a first series connection of a first phase change memory (PCM) switch and a second PCM switch. The first PCM switch includes a first heater line, a first PCM line, and a first contact electrode and a second contact electrode located on the first heater line. The second PCM switch includes a second heater line, a second PCM line, and a third contact electrode and a fourth contact electrode located on the second heater line. The second contact electrode is electrically connected to the third contact electrode. The fourth contact electrode is electrically grounded. One of the first contact electrode and the second contact electrode includes an radio-frequency (RF) signal input port. Another of the first contact electrode and the second contact electrode comprises an RF signal output port. The device structure may function as a combination PCM switch that decreases noise level during signal transmission.

Provided are a display device and a method for manufacturing the same. According to one or more embodiments of the present disclosure, the display device includes a substrate, a pixel electrode above the substrate, an organic layer above the pixel electrode, a light-emitting element above the organic layer, and including a contact electrode in contact with the organic layer, and a connection electrode connected to the pixel electrode and to the contact electrode, on a side surface of the organic layer, and on a side surface of the contact electrode.

The present disclosure provides an optical module, comprising a light source comprising a laser assembly. The laser assembly comprises a semiconductor gain chip and a wavelength tuning chip which form a resonant cavity; the wavelength tuning chip comprises at least one micro-ring filter; the at least one micro-ring filter is used for screening for a beam of a specific wavelength from among beams emitted by the semiconductor gain chip; the micro-ring filter comprises a first slab region and a second slab region which are located on two sides of a silicon waveguide ridge region, and a contact electrode; an N-type doped region is provided in the first slab region, and a P-type doped region is provided in the second slab region; the P-type doped region and the N-type doped region form a PN junction electrically connected to the contact electrode; and electron-hole pairs in the silicon waveguide ridge region and the first and second slab regions can be absorbed by applying a reverse bias to the PN junction.

A display device comprises a substrate, a first electrode on the substrate and extending in a first direction, a second electrode on the substrate and extending in the first direction, the second electrode being spaced apart from the first electrode in a second direction, a first insulating layer on the first electrode and the second electrode, light-emitting elements on the first insulating layer, the light-emitting elements being disposed on the first electrode and the second electrode, a second insulating layer disposed on the light-emitting elements, a first contact electrode disposed on the first electrode and electrically contacting the light-emitting elements, and a second contact electrode disposed on the second electrode and electrically contacting the light-emitting elements. The second insulating layer comprises patterns that cover at least part of the light-emitting elements and are spaced apart from one another in the first direction.

The present disclosure provides a method and system for forecasting the likelihood of seizure onset within an individual. Specifically, the present disclosure relates to an intracranial implant comprising one or more electrodes attached thereto and an associated method for delivering active perturbation patterns to brain regions which includes: sending, via the intracranial implant, an electrical stimuli into a brain, wherein the electrical stimuli is sent in accordance with a stimuli pattern; measuring an output from the brain in response to the electrical stimuli; feeding the output into a forecasting model; and detecting, via the forecasting model, outputs that indicate a high likelihood of seizure. The intracranial implant and associated method may further apply via the brain-contacting electrodes, a prophylactic treatment to the brain to prevent a seizure from occurring, based on detecting an output indicating a high likelihood of seizure.

The invention discloses a semiconductor device and a preparation method thereof. The semiconductor device comprises a substrate; the epitaxial structure is positioned on one side of the substrate; two-dimensional electron gas is formed in the epitaxial structure; the groove is located in the epitaxial structure and at least penetrates through the two-dimensional electron gas; a contact medium is arranged in the groove; the electron concentration of the contact medium is greater than that of the epitaxial structure; the ohmic contact electrode is positioned on one side, far away from the substrate, of the contact medium; and the ohmic contact electrode and the contact medium form ohmic contact. By adopting the technical means, the groove is formed in the epitaxial structure, the contact medium is arranged in the groove, and the ohmic contact electrode and the contact medium form ohmic contact, so that the ohmic contact resistance can be reduced, and the output current and the output power of the semiconductor device can be improved.

The invention provides a display device and a method of manufacturing the same. The display device includes a substrate including a first pad electrode and a second pad electrode; a bank defining a first opening through which at least a portion of the first pad electrode and at least a portion of the second pad electrode are exposed; an inter-electrode planarization layer between the first pad electrode and the second pad electrode; a first reflective electrode extending from the bank to the inter-electrode planarization layer along the first pad electrode; a second reflective electrode extending from the bank to the inter-electrode planarization layer along the second pad electrode; an organic pattern layer in the first opening; a light emitting element having a first contact electrode and a second contact electrode on a top surface thereof; a via layer covering the light emitting element and defining a contact hole; a first lead over the via layer and electrically connecting the first contact electrode and the first reflective electrode; and a second lead over the via layer and electrically connecting the second contact electrode and the second reflective electrode.

The invention discloses a vibration sensor. A transducer device (2) excites a mechanically oscillating unit (1) to mechanical vibrations or receives mechanical vibrations from it. The transducer device (2) has at least two piezoelectric elements (7), each with two end faces (8, 9) of different electrical polarization. The piezoelectric elements (7) are arranged adjacent to each other in a stack such that the end faces (8, 9) with the same polarization are opposite each other. The piezoelectric elements (7) are contacted by a contact electrode (10) between the end faces (8, 9).

The invention discloses a graphene intercalation-based black phosphorus photovoltaic detector and a preparation method thereof. The graphene intercalation-based black phosphorus photovoltaic detector comprises a low-resistance silicon / silicon dioxide substrate, a left contact electrode, a right contact electrode and a sandwich structure layer from bottom to top, the left contact electrode and the right contact electrode are deposited on the low-resistance silicon / silicon dioxide substrate, and a conducting channel structure is formed between the left contact electrode and the right contact electrode; the sandwich structure layer is a sandwich structure constructed by an upper black phosphorus film layer, a middle graphene intercalation layer and a lower black phosphorus film layer, and is located in the conductive channel as a photosensitive region; and the left contact electrode and the right contact electrode are respectively in Schottky contact connection with the upper black phosphorus film layer and the lower black phosphorus film layer. According to the graphene intercalation-based black phosphorus photovoltaic detector and the preparation method thereof, visible light and infrared light can be efficiently detected at the same time, and the graphene intercalation-based black phosphorus photovoltaic detector has the excellent characteristics of low dark current, quick response, high-sensitivity low-power-consumption detection and the like.

An optoelectronic device includes a semiconductor stack, including a first semiconductor layer, an active layer, and a second semiconductor layer; a contact electrode formed on the second semiconductor layer; an insulating reflective structure covering the contact electrode and including a plurality of insulating reflective structure openings to expose the contact electrode; a metal reflective structure covering the plurality of insulating reflective structure openings to electrically connect to the contact electrode; and an insulating structure including one or more first insulating structure openings to expose the first semiconductor layer and one or more second insulating structure openings to expose the metal reflective structure.