1018 results about "Contact electrode" patented technology

A light-emitting device includes: a substrate; a unit light-emitting area disposed on the substrate; first and second electrodes disposed in the unit light-emitting area to be separated from each other; a plurality of rod-shaped LEDs disposed between the first and second electrodes; a reflective contact electrode disposed on opposite ends of the rod-shaped LEDs to electrically connect the rod-shaped LEDs to the first and second electrodes; and a light-transmitting structure disposed between the first and second electrodes and extending to cross the rod-shaped LEDs.

The invention relates to the technical field of oil field reservoir research, in particular to a fracturing fracture imaging physical simulation method and system combined with non-uniform contact electrodes, and the method comprises the steps: carrying out the resistance modal detection at the current time step through a low-frequency excitation signal in the fracture propagation simulation process, and obtaining a corresponding electric signal; obtaining a conductive fluid distribution result of the rock core fracturing test piece at the current time step by using the conductive fluid distribution inversion model; and fitting and comparing the electric field distribution result of the current time step with the conductive fluid distribution result of the current time step, and outputting the fracture parameters and the conductive fluid distribution result of the rock core fracturing test piece at the current time step based on the fitting and comparison result. According to the method, the electrical property change caused by the natural fracture and the fluid contained in the natural fracture is directly sensed in situ, the electrical signal is acquired, the response delay is reduced, the conductive fluid distribution inversion model is constructed by combining prior knowledge and deep learning, and the precision and reliability of conductive fluid distribution inversion are effectively improved.

A system to perform electroporation ablation of target tissue in a chamber of a patient's heart, the system comprising a catheter and a controller. The catheter includes an electrode assembly having a plurality of ablation electrodes, wherein the catheter is adapted to position the electrode assembly in contact with the target tissue. The controller is configured to identify, from among the plurality of ablation electrodes, a first subset of ablation electrodes that are in contact with the target tissue, and a second subset of ablation electrodes that are not in contact with the target tissue, and to apply a pulsed electrical signal to the first subset of ablation electrodes and not to the second subset of ablation electrodes.

The invention discloses a multi-mode reconfigurable diamond solar-blind ultraviolet photoelectric transistor and a preparation method thereof, and aims to solve the problem of separation of sensing, storage and calculation frameworks of an existing artificial vision system. According to the diamond solar blind ultraviolet photoelectric transistor, a terminal is arranged on the surface of a diamond substrate, a first metal film layer is deposited on the upper surface of the diamond substrate to serve as a first contact electrode, the first contact electrode is Schottky contact, and a second contact electrode is a metal probe. The second contact electrode is in needle point contact with the upper surface of the diamond substrate, a second metal film layer is deposited on the lower surface of the diamond substrate to serve as a third contact electrode, and the third contact electrode is Schottky contact. According to the reconfigurable diamond solar blind ultraviolet photoelectric transistor, different functions of an avalanche detector, an optical memory, visual synapse and the like are integrated in one device, and large gain rising of the diamond detector and multi-mode intelligent sensing of a single device are achieved.

The invention relates to a preparation method of a local ITO interconnected perovskite-TOPCon laminated cell, which comprises the following steps: taking an n-type monocrystalline silicon wafer as a substrate, cleaning and texturing, diffusing boron on the back to form a P + emitter, oxidizing at high temperature, and treating the surface through acid etching and alkali polishing; sequentially preparing a tunneling oxide layer and a phosphorus-doped polycrystalline silicon layer on the front surface, annealing and crystallizing, depositing an aluminum oxide film and a multi-layer silicon nitride film on the back surface after cleaning, and depositing a single-layer silicon nitride film on the front surface; preparing a back metal electrode, etching according to a designed pattern to remove a local silicon nitride film on the front surface, sequentially preparing an ITO interconnection layer, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer and an ITO transparent conductive layer on the front surface, and finally preparing a front metal electrode and solidifying to form a contact electrode. According to the invention, the problems of back corrosion risk, effective area loss and tedious process in the existing method are solved, full-size manufacturing is realized, the cell performance is improved, and industrialization is easier.

The invention discloses a chip structure capable of simultaneously improving deep ultraviolet LED crystal quality and injection efficiency and a preparation method. The chip structure comprises a substrate, a buffer layer is arranged on the substrate, a multi-quantum well layer is arranged above the buffer layer, an n-type doping layer is arranged on the side face of the multi-quantum well layer, and an n-type contact electrode is arranged above the n-type doping layer. A plurality of p-type doped layer plugs are inserted in the multi-quantum well layer, a p-type doped layer is arranged above the p-type doped layer plugs and the multi-quantum well layer, and a p-type contact electrode is arranged on the p-type doped layer; a passivation layer is arranged on the upper surface of the whole structure, and the thickened metal electrode penetrates through the passivation layer and is located on the n-type contact electrode and the p-type contact electrode. According to the invention, insufficient hole injection in the multi-quantum well layer and the crystal quality of the multi-quantum well layer can be improved at the same time.

A device structure includes a first series connection of a first phase change memory (PCM) switch and a second PCM switch. The first PCM switch includes a first heater line, a first PCM line, and a first contact electrode and a second contact electrode located on the first heater line. The second PCM switch includes a second heater line, a second PCM line, and a third contact electrode and a fourth contact electrode located on the second heater line. The second contact electrode is electrically connected to the third contact electrode. The fourth contact electrode is electrically grounded. One of the first contact electrode and the second contact electrode includes an radio-frequency (RF) signal input port. Another of the first contact electrode and the second contact electrode comprises an RF signal output port. The device structure may function as a combination PCM switch that decreases noise level during signal transmission.

Provided are a display device and a method for manufacturing the same. According to one or more embodiments of the present disclosure, the display device includes a substrate, a pixel electrode above the substrate, an organic layer above the pixel electrode, a light-emitting element above the organic layer, and including a contact electrode in contact with the organic layer, and a connection electrode connected to the pixel electrode and to the contact electrode, on a side surface of the organic layer, and on a side surface of the contact electrode.

The invention discloses a semiconductor device and a preparation method thereof. The semiconductor device comprises a substrate; the epitaxial structure is positioned on one side of the substrate; two-dimensional electron gas is formed in the epitaxial structure; the groove is located in the epitaxial structure and at least penetrates through the two-dimensional electron gas; a contact medium is arranged in the groove; the electron concentration of the contact medium is greater than that of the epitaxial structure; the ohmic contact electrode is positioned on one side, far away from the substrate, of the contact medium; and the ohmic contact electrode and the contact medium form ohmic contact. By adopting the technical means, the groove is formed in the epitaxial structure, the contact medium is arranged in the groove, and the ohmic contact electrode and the contact medium form ohmic contact, so that the ohmic contact resistance can be reduced, and the output current and the output power of the semiconductor device can be improved.

The invention provides a display device and a method of manufacturing the same. The display device includes a substrate including a first pad electrode and a second pad electrode; a bank defining a first opening through which at least a portion of the first pad electrode and at least a portion of the second pad electrode are exposed; an inter-electrode planarization layer between the first pad electrode and the second pad electrode; a first reflective electrode extending from the bank to the inter-electrode planarization layer along the first pad electrode; a second reflective electrode extending from the bank to the inter-electrode planarization layer along the second pad electrode; an organic pattern layer in the first opening; a light emitting element having a first contact electrode and a second contact electrode on a top surface thereof; a via layer covering the light emitting element and defining a contact hole; a first lead over the via layer and electrically connecting the first contact electrode and the first reflective electrode; and a second lead over the via layer and electrically connecting the second contact electrode and the second reflective electrode.

The invention discloses a graphene intercalation-based black phosphorus photovoltaic detector and a preparation method thereof. The graphene intercalation-based black phosphorus photovoltaic detector comprises a low-resistance silicon / silicon dioxide substrate, a left contact electrode, a right contact electrode and a sandwich structure layer from bottom to top, the left contact electrode and the right contact electrode are deposited on the low-resistance silicon / silicon dioxide substrate, and a conducting channel structure is formed between the left contact electrode and the right contact electrode; the sandwich structure layer is a sandwich structure constructed by an upper black phosphorus film layer, a middle graphene intercalation layer and a lower black phosphorus film layer, and is located in the conductive channel as a photosensitive region; and the left contact electrode and the right contact electrode are respectively in Schottky contact connection with the upper black phosphorus film layer and the lower black phosphorus film layer. According to the graphene intercalation-based black phosphorus photovoltaic detector and the preparation method thereof, visible light and infrared light can be efficiently detected at the same time, and the graphene intercalation-based black phosphorus photovoltaic detector has the excellent characteristics of low dark current, quick response, high-sensitivity low-power-consumption detection and the like.

An optoelectronic device includes a semiconductor stack, including a first semiconductor layer, an active layer, and a second semiconductor layer; a contact electrode formed on the second semiconductor layer; an insulating reflective structure covering the contact electrode and including a plurality of insulating reflective structure openings to expose the contact electrode; a metal reflective structure covering the plurality of insulating reflective structure openings to electrically connect to the contact electrode; and an insulating structure including one or more first insulating structure openings to expose the first semiconductor layer and one or more second insulating structure openings to expose the metal reflective structure.

The invention provides a photovoltaic cell and a photovoltaic module. The photovoltaic cell comprises a substrate; the doping layer and the passivation layer are arranged on the substrate; a first contact electrode passing through the passivation layer and in contact with the doping layer; and the first transmission electrode is connected with the first contact electrode. The first transmission electrode is used for interconnection between two adjacent photovoltaic cells. The first transmission electrode comprises a non-interconnection end, and the first contact electrode comprises a first end part closest to the non-interconnection end; the length of the first transmission electrode between the first end portion and the end point of the non-interconnection end is W2, the length from the first end portion to the corresponding edge of the substrate in the third direction is W1, and W2 is larger than W1. W2 is greater than W1, so that the part, exceeding the first end part, of the first transmission electrode has enough length, and the electrical contact between the first transmission electrode and the first end part can be effectively ensured, thereby improving the connection strength between the first transmission electrode and the first contact electrode, reducing the occurrence of electric leakage, and improving the yield and performance of the battery.

The invention discloses a core-shell polymer droplet generation device based on an alternating electric field micro-fluidic device, which comprises a micro-fluidic chip, and the micro-fluidic chip comprises a sealing cover layer, a chip layer and a substrate layer which are stacked in sequence; the sealing cover layer is provided with five fluid inlets communicated with the chip layer, and the five fluid inlets are respectively communicated with an injection pump through thin pipes; the chip layer comprises five fluid leading-in channels and a micro-droplet leading-out channel, and ports of the five fluid leading-in channels are communicated with the five fluid inlets; the substrate layer is provided with a micro-droplet collecting outlet communicated with a port of the micro-droplet leading-out channel; the chip layer is provided with a non-contact electrode, and the non-contact electrode is connected with a high-voltage alternating current power supply through a wire; by applying the alternating electric field and actively regulating and controlling the frequency and voltage parameters of the electric field, the shape, the size, the generation frequency and other characteristics of the core-shell polymer liquid drop can be controlled, accurate preparation of the core-shell polymer liquid drop is achieved, and the diversified requirements of different application scenes are met.

The invention provides a resistive pressure sensor and a preparation method thereof, and belongs to the technical field of intelligent pressure monitoring. The resistive pressure sensor comprises a sensor main body and a packaging layer. The sensor main body comprises a first flexible substrate, a second flexible substrate, a flexible conductive layer and an electrode assembly. The first flexible substrate is provided with a plurality of first protrusions distributed in an array mode. The second flexible substrate is provided with a plurality of second protrusions distributed in an array mode, and the second protrusions and the first protrusions are distributed in a staggered mode. The flexible conducting layer is located between the first flexible substrate and the second flexible substrate, the flexible conducting layer comprises a flexible substrate and a conducting layer which are distributed in a stacked mode, the flexible substrate makes contact with the first protrusions, and the conducting layer makes contact with the second protrusions; the electrode assembly comprises two electrodes which are distributed at an interval, and the two electrodes are electrically connected with the conductive layer respectively; the packaging layer is located on the circumferential side wall of the sensor body. The resistive pressure sensor has the advantage of being large in pressure measurement range.

The invention discloses an intelligent sacral nerve stimulation system based on six-contact electrode real-time monitoring and positive and negative electrode combination real-time dynamic adjustment, a rehabilitation system and a six-contact electrode sacral nerve stimulation system.The sacral nerve stimulation autonomous adjustment system comprises a six-contact electrode sacral nerve stimulation unit and an adjustment control unit, the six-contact electrode sacral nerve stimulation unit is electrically connected with the adjustment control unit, and the adjustment control unit is used for responding to an adjustment request at the current moment and generating a stimulation signal in a stimulation channel according to the six-contact electrode sacral nerve stimulation unit; in response to the stimulation signal, determining a second neural signal matched with the first neural signal; and outputting an adjustment control instruction according to the second neural signal so as to control the six-contact electrode sacral nerve stimulation unit to autonomously adjust. On one hand, sacral nerve stimulation self-adjustment can be periodically realized, and on the other hand, sacral nerve stimulation accuracy is improved. The invention further provides a rehabilitation system.

The invention discloses a method for preparing a boron nitride-gallium oxide thin film flexible dual-band ultraviolet solar blind detector through Van der Waals stripping, and aims to improve the comprehensive performance of the detector. The method comprises the steps of h-BN substrate pretreatment and surface modification, Sn gradient doped beta-Ga2O3 layer preparation, heterojunction interface passivation treatment, two-step Van der Waals stripping and flexible transfer, ohmic contact electrode preparation, gate type Schottky contact electrode preparation, post-treatment and packaging. According to the core, the interface state density is reduced through Al2O3 passivation, and carrier transport is optimized through Sn gradient doping, so that the detector achieves 200-280 nm dual-band response, the peak response rate is high, the response time is short, the leakage current is low, the flexible bending stability is good, high performance and flexibility are both considered, and industrial application can be achieved.

The invention discloses a sampling device for ICP-MS (Inductively Coupled Plasma Mass Spectrometry) in the technical field of instrumental analysis. The sampling device comprises a liquid inlet mechanism and an atomization mechanism, the liquid inlet mechanism is used for inputting a liquid sample into the atomization mechanism, the atomization mechanism comprises a concentric atomizer and an atomization chamber, the concentric atomizer is communicated with the atomization chamber, and the atomization chamber is communicated with a waste liquid barrel and an ICP torch pipe; a self-cleaning mechanism is arranged on a communication path of the concentric atomizer and the atomizing chamber, the self-cleaning mechanism comprises a movable cylinder, the movable cylinder is rotationally connected into a nozzle of the concentric atomizer, contact electrodes are symmetrically arranged in the movable cylinder, and when the movable cylinder is blocked, the contact electrodes form a path; the contact electrode is electrically connected with a torsion mechanism and a reverse blowing mechanism, the torsion mechanism is used for twisting the movable cylinder when the contact electrode forms a path, and the reverse blowing mechanism is used for intercepting carrier gas input into the concentric atomizer and reversely blowing the carrier gas out of a nozzle of the concentric atomizer. According to the invention, self-cleaning can be carried out when blockage occurs in the sample introduction process, and sample analysis interruption caused by blockage is reduced.

Disclosed is a battery module improved in efficiency of resistance welding and bonding reliability. The battery module includes a plurality of secondary batteries, each having electrode terminals; a module housing having an inner space configured to accommodate the plurality of secondary batteries; and a bus bar including a body portion having a metal plate configured to electrically connect the plurality of secondary batteries to each other and a connection portion extending from the body portion to contact the electrode terminal. Each of the first connection portion, the second connection portion, and the third connection portion has at least one welding point.

A display device includes a substrate, first and second electrodes on the substrate, an organic pattern layer between the first electrode and the second electrode, a light emitting element on the organic pattern layer and having a first contact electrode and a second contact electrode on a top surface, a first via layer covering the first electrode and the second electrode and covering a portion of a side surface of the light emitting element, a first lower connection electrode connecting the first electrode and the first contact electrode on the first via layer, and a second lower connection electrode connecting the second electrode and the second contact electrode, a second via layer on the first via layer and covering a portion of a side surface of the light emitting element, and a first upper connection electrode connecting the first electrode and the first contact electrode.

The invention provides a direct heating type reconfigurable intelligent metasurface based on a phase change material and a preparation method thereof, the metasurface is composed of a plurality of metasurface units arranged in an array mode, and each metasurface unit comprises a substrate, a first dielectric layer, a middle metal layer, a second dielectric layer and a phase change material layer which are sequentially arranged from bottom to top; the two sides of the phase change material layer are respectively provided with a metal patch of a metal radiation patch structure. A contact electrode is arranged in the substrate; the first dielectric layer and the second dielectric layer are insulating layers, a first vertical through hole and a second vertical through hole are further formed in the metasurface unit, the metal patch radiation structure and a contact electrode of the substrate form an electrical path flow through the first vertical through hole and the second vertical through hole, and the current flows through the phase change material layer to drive the phase change material to generate crystalline state / amorphous state conversion. And an equivalent conductive path, electromagnetic coupling strength or local impedance between the metal patch radiation structures is changed in different phase states.

According to one embodiment, a method of manufacturing a capacitor includes providing a substrate to be processed; providing a first conductive material portion on a main surface of a semiconductor substrate located in an opening; processing the conductive layer in a pattern shape by dry etching; providing a first contact electrode, a second contact electrode, and a second conductive material portion; performing dry etching to the first conductive material portion to disconnect electrical connection between a connection portion and the semiconductor substrate; and performing wet etching to the second conductive material portion to disconnect electrical connection between the first contact electrode and the second contact electrode.

A method for producing an electrochemical storage cell is presented. The method comprises the following steps: - Providing a flat, substantially circular contact disc (200) with at least two contact segments (201, 202), each forming a circular section of the contact disc (200) and arranged symmetrically around the center point (204) of the contact disc (200), and wherein circular sections (205, 206) are cut out of the contact disc (200) between the contact segments (201, 202) and arranged symmetrically around the center point (204) of the contact disc (204), - arranging an electrode coil (190) in a cylindrical cell housing (110), wherein the electrode coil (190) comprises an electrode layer sequence (1), - contacting the electrode winding (190) by bringing an edge region of the electrode layer sequence into contact with a first surface of the contact segments (201, 202) of the contact disc (200), and - welding the electrode coil (190) to the contact disc by applying welding arcs (209) to a second surface (208) of the contact segments (201, 202) facing away from the first surface of the contact disc (200), the welding arcs (209) being arranged at least partially concentrically around the center point (204).

A light emitting device may include: a substrate including a plurality of unit light emitting regions; and first to fourth insulating layers sequentially on the substrate. Each of the unit light emitting regions may include: at least one light emitting element on the first insulating layer, the at least one light emitting element having a first end portion and a second end portion in a length direction thereof; first and second partition walls on the substrate, and the first and second partition walls being spaced apart from each other; a first reflective electrode on the first partition wall and a second reflective electrode on the second partition wall; a first contact electrode on the first reflective electrode, the first contact electrode connecting the first reflective electrode and the first end portion of the light emitting element; a second contact electrode on the second reflective electrode, the second contact electrode connecting the second reflective electrode and the second end portion of the light emitting element; and a conductive pattern provided between the first insulating layer and the first contact electrode, the conductive pattern surrounding the first and second reflective electrodes when viewed on a plane.

The invention discloses a reinforced p-GaN enhanced gallium nitride device resistant to single-particle burnout and a preparation method thereof, and mainly solves the problems that a gallium nitride device is prone to single-particle burnout in a space radiation environment and is insufficient in reliability. Comprising a substrate, a nucleating layer, a buffer layer, a channel layer, a barrier layer and a p-GaN cap layer which are sequentially grown on the substrate, a grid electrode formed by etching, and a mixed source electrode and a mixed drain electrode which are respectively formed by a plurality of deep embedded electrode regions and a plurality of surface contact electrode regions which are alternately arranged and are positioned on two sides of the grid electrode, wherein the deep embedded electrode region comprises a deep embedded source electrode and a deep embedded drain electrode and penetrates through the barrier layer and the channel layer, and the bottom of the deep embedded electrode region is in metal contact with the buffer layer; the surface contact electrode region comprises a conventional source electrode and a conventional drain electrode, and the bottom of the surface contact electrode region is in metal contact with the barrier layer or the channel layer. Accumulation of carriers in a channel region can be effectively inhibited, the single-particle burning resistance of the device is remarkably improved, and the performance of the device is improved.

A lampshade structure includes a lampshade housing and a base. A circuit board is accommodated in an accommodation room of the lampshade housing. The circuit board is connected to two contact electrodes. The base has a lamp holder and a lamp disk. The lamp holder has two arc-shaped grooves for insertion of the contact electrodes. The arc-shaped grooves each have a large-diameter end and a small-diameter end. An electrically-conductive element connected to an external power source is embedded in the small-diameter end. During installation, a guide post in the accommodation cavity room is moved along a guide groove on the outer peripheral wall of the lamp disk, and each contact electrode is energized by contacting the corresponding electrically-conductive element after sliding the guide post into place, so as to achieve quick installation and disassembly.

An electrode apparatus for nerve denervation or modulation in vivo includes a main body including a shaft; an electrode unit formed to be drawn out from one end of the shaft and configured to denervate or modulate at least part of nerves on a tube in a body; an electrode guide coupled to the end of the electrode unit and configured to guide the electrode unit to be brought into contact with the tube in the body; an electrode guide driving unit configured to move the electrode guide in forward and backward directions; and an electrode driving unit configured to move the electrode guide in the forward and backward directions in conjunction with the electrode guide driving unit. The electrode driving unit includes a tensile force maintenance unit connected to one end of the electrode unit and configured to provide a tensile force to the electrode unit; and a moving unit that moves in the forward direction until the electrode guide is transitioned to a first state in a state where the moving unit is connected to the tensile force maintenance unit, and then is disconnected from the tensile force maintenance unit and further moves in the forward direction until the electrode guide is transitioned to a second state.

The present disclosure relates to a display device, a method for manufacturing the same and electronic device. A light-emitting element device includes a substrate, a pixel electrode and a common electrode spaced from each other on the substrate, an organic pattern layer located between the pixel electrode and the common electrode, a light-emitting element above the organic pattern layer and including a first contact electrode and a second contact electrode above a top surface of the light-emitting element, an organic layer located in an area excluding the area where the light-emitting element is located and have a first opening and a second opening, a first conductive wall in the first opening and electrically connected to the pixel electrode, and a second conductive wall in the second opening and electrically connected to the common electrode; and a first connection electrode and a second connection electrode.

The invention relates to the technical field of cognitive impairment noninvasive screening, and discloses a cognitive impairment noninvasive screening system and method.The system comprises a physiological sensing end, a feature collaboration end, an intelligent decision-making end and a visual report end, by arranging the physiological sensing end, 5-meter-distance non-contact detection is achieved, the feature collaboration end is connected with the intelligent decision-making end, and the visual report end is connected with the feature collaboration end; discomfort and signal interference caused by a traditional contact type electrode are avoided; the problem of asynchronous data fusion is solved by setting a feature collaboration end; according to the method, the dependence of traditional screening on contact equipment and professionals is broken through, high-precision and low-cost cognitive impairment general screening is realized, and the method is suitable for community medical treatment and family health monitoring scenes.

A display device includes a substrate. A first electrode, a second electrode, and a third electrode are on the substrate, and are sequentially arranged along a first direction. A first light emitting element is located between the first electrode and the second electrode. A second light emitting element is located between the second electrode and the third electrode. A first contact electrode overlaps the first electrode and one end of the first light emitting element, and is in contact with the first electrode and the one end of the first light emitting element. A second contact electrode overlaps and is in contact with the other end of the first light emitting element. A third contact electrode overlaps and is in contact with the second electrode and the other end of the second light emitting element. The second contact electrode extends while detouring the third contact electrode.