486 results about "Contact electrode" patented technology

The invention relates to the technical field of oil field reservoir research, in particular to a fracturing fracture imaging physical simulation method and system combined with non-uniform contact electrodes, and the method comprises the steps: carrying out the resistance modal detection at the current time step through a low-frequency excitation signal in the fracture propagation simulation process, and obtaining a corresponding electric signal; obtaining a conductive fluid distribution result of the rock core fracturing test piece at the current time step by using the conductive fluid distribution inversion model; and fitting and comparing the electric field distribution result of the current time step with the conductive fluid distribution result of the current time step, and outputting the fracture parameters and the conductive fluid distribution result of the rock core fracturing test piece at the current time step based on the fitting and comparison result. According to the method, the electrical property change caused by the natural fracture and the fluid contained in the natural fracture is directly sensed in situ, the electrical signal is acquired, the response delay is reduced, the conductive fluid distribution inversion model is constructed by combining prior knowledge and deep learning, and the precision and reliability of conductive fluid distribution inversion are effectively improved.

The invention discloses a method for preparing a boron nitride-gallium oxide thin film flexible dual-band ultraviolet solar blind detector through Van der Waals stripping, and aims to improve the comprehensive performance of the detector. The method comprises the steps of h-BN substrate pretreatment and surface modification, Sn gradient doped beta-Ga2O3 layer preparation, heterojunction interface passivation treatment, two-step Van der Waals stripping and flexible transfer, ohmic contact electrode preparation, gate type Schottky contact electrode preparation, post-treatment and packaging. According to the core, the interface state density is reduced through Al2O3 passivation, and carrier transport is optimized through Sn gradient doping, so that the detector achieves 200-280 nm dual-band response, the peak response rate is high, the response time is short, the leakage current is low, the flexible bending stability is good, high performance and flexibility are both considered, and industrial application can be achieved.

The invention provides a direct heating type reconfigurable intelligent metasurface based on a phase change material and a preparation method thereof, the metasurface is composed of a plurality of metasurface units arranged in an array mode, and each metasurface unit comprises a substrate, a first dielectric layer, a middle metal layer, a second dielectric layer and a phase change material layer which are sequentially arranged from bottom to top; the two sides of the phase change material layer are respectively provided with a metal patch of a metal radiation patch structure. A contact electrode is arranged in the substrate; the first dielectric layer and the second dielectric layer are insulating layers, a first vertical through hole and a second vertical through hole are further formed in the metasurface unit, the metal patch radiation structure and a contact electrode of the substrate form an electrical path flow through the first vertical through hole and the second vertical through hole, and the current flows through the phase change material layer to drive the phase change material to generate crystalline state / amorphous state conversion. And an equivalent conductive path, electromagnetic coupling strength or local impedance between the metal patch radiation structures is changed in different phase states.

The invention discloses a reinforced p-GaN enhanced gallium nitride device resistant to single-particle burnout and a preparation method thereof, and mainly solves the problems that a gallium nitride device is prone to single-particle burnout in a space radiation environment and is insufficient in reliability. Comprising a substrate, a nucleating layer, a buffer layer, a channel layer, a barrier layer and a p-GaN cap layer which are sequentially grown on the substrate, a grid electrode formed by etching, and a mixed source electrode and a mixed drain electrode which are respectively formed by a plurality of deep embedded electrode regions and a plurality of surface contact electrode regions which are alternately arranged and are positioned on two sides of the grid electrode, wherein the deep embedded electrode region comprises a deep embedded source electrode and a deep embedded drain electrode and penetrates through the barrier layer and the channel layer, and the bottom of the deep embedded electrode region is in metal contact with the buffer layer; the surface contact electrode region comprises a conventional source electrode and a conventional drain electrode, and the bottom of the surface contact electrode region is in metal contact with the barrier layer or the channel layer. Accumulation of carriers in a channel region can be effectively inhibited, the single-particle burning resistance of the device is remarkably improved, and the performance of the device is improved.

A lampshade structure includes a lampshade housing and a base. A circuit board is accommodated in an accommodation room of the lampshade housing. The circuit board is connected to two contact electrodes. The base has a lamp holder and a lamp disk. The lamp holder has two arc-shaped grooves for insertion of the contact electrodes. The arc-shaped grooves each have a large-diameter end and a small-diameter end. An electrically-conductive element connected to an external power source is embedded in the small-diameter end. During installation, a guide post in the accommodation cavity room is moved along a guide groove on the outer peripheral wall of the lamp disk, and each contact electrode is energized by contacting the corresponding electrically-conductive element after sliding the guide post into place, so as to achieve quick installation and disassembly.

The invention discloses a display device. The present disclosure includes: a substrate; a circuit layer disposed on the substrate; a plurality of banks disposed on the circuit layer; a plurality of light emitting elements disposed on the bank and each having a first electrode and a second electrode; a contact electrode disposed on the bank to be electrically connected with the first electrode and having a contact opening; and an optical layer covering side surfaces of the plurality of light emitting elements and the contact electrode and having a contact hole in a contact opening of the contact electrode, in which the contact electrode is electrically connected with the second electrode through the contact hole of the optical layer without the transparent conductive layer.

The disclosure discloses a display device including a substrate, a circuit layer disposed on the substrate, and a plurality of banks disposed on the circuit layer. A plurality of light-emitting elements is disposed on the banks, each having a first electrode and a second electrode. A contact electrode is disposed on the bank and is electrically connected to the first electrode. The contact electrode includes a contact opening. An optical layer covers side surfaces of the plurality of light-emitting elements and the contact electrode, and includes a contact hole aligned with the contact opening of the contact electrode. The contact electrode is electrically connected with the second electrode through the contact hole of the optical layer. A transparent conductive layer is not present in the region of electrical connection between the contact electrode and the second electrode. This structure improves adhesion and maintains the structural integrity of the optical layer.

A light emitting device may include: a substrate including a plurality of unit light emitting regions; and first to fourth insulating layers sequentially on the substrate. Each of the unit light emitting regions may include: at least one light emitting element on the first insulating layer, the at least one light emitting element having a first end portion and a second end portion in a length direction thereof; first and second partition walls on the substrate, and the first and second partition walls being spaced apart from each other; a first reflective electrode on the first partition wall and a second reflective electrode on the second partition wall; a first contact electrode on the first reflective electrode, the first contact electrode connecting the first reflective electrode and the first end portion of the light emitting element; a second contact electrode on the second reflective electrode, the second contact electrode connecting the second reflective electrode and the second end portion of the light emitting element; and a conductive pattern provided between the first insulating layer and the first contact electrode, the conductive pattern surrounding the first and second reflective electrodes when viewed on a plane.

The invention discloses a vibration sensor with a mechanically oscillating unit (1), a housing (3), and a transducer device (2) comprising a transmitter component (20) and a receiver component (21), and bounded at its end face by two insulating disks (23). Of at least three contact electrodes (9, E+, S+, GND1, GND2, GND), two serve to transmit the excitation and reception signals. A third contact electrode (GND1, GND2, GND) serves to connect to a ground potential or the housing (3). Each contact electrode (9, E+, S+, GND1, GND2, GND) has a base (90) and a contact tab (91). The base (90) is designed as a flat disk with a crescent-shaped outer contour (92), the outer contour (92) consisting of a partial circular contour (93) and an inwardly projecting, smoothly sloping recessed section (94).

The display device is provided. The display device comprises contact electrodes disposed on a substrate, light-emitting elements disposed on the contact electrodes, and an insulating layer defining emission areas corresponded to the light-emitting elements. The light-emitting elements comprise a first light-emitting element that emits a first light having a blue color, a second light-emitting element that emits a second light having a green color, and a third light-emitting element that emits a third light having a red color. A width of the first light-emitting element is greater than a width of the second light-emitting element. The width of the first light-emitting element is greater than a width of the third light-emitting element.

A temperature sensing apparatus having an electrode with an associated redox-active polymer. The electrode is connected to circuitry which applies an interrogating electrical potential waveform. The circuitry measures an electrical current resulting from application of the electrical potential waveform. The measured electrical current is processed to determine the temperature of a solution contacting the electrode. The apparatus may further comprise an analyte sensing redox-active polymer for sensing the amount of an analyte in the solution.

Provided are a display device and a method for manufacturing same. A display device according to an embodiment may comprise: a substrate; a pixel electrode and a common electrode disposed on the substrate; first and second reflective electrodes disposed on the pixel electrode and the common electrode, respectively; first and second sacrificial electrodes disposed on the first and second reflective electrodes; an organic layer disposed on the first and second sacrificial electrodes; a light-emitting element disposed on the organic layer and including a semiconductor stack and first and second contact electrodes; a first connection electrode connecting the pixel electrode and the first contact electrode through a first connection hole formed in the organic layer and the first sacrificial electrode; and a second connection electrode connecting the common electrode and the second contact electrode through a second connection hole formed in the organic layer and the second sacrificial electrode.

This application provides an ultrasonic sensor, its manufacturing method, and an ultrasonic testing device. The ultrasonic sensor includes a piezoelectric unit, a first contact electrode, a second contact electrode, a first bent wire, a first external structure, a second bent wire, a second external structure, and a flexible encapsulation. The first contact electrode is connected to a first surface of the corresponding piezoelectric unit, and the second contact electrode is connected to a second surface of the corresponding piezoelectric unit. The flexible encapsulation covers the piezoelectric unit, the first contact electrode, and the second contact electrode. The first contact electrode is electrically connected to the first external structure via the first bent wire, with at least a portion of the first external structure exposed within the flexible encapsulation. The second contact electrode is electrically connected to the second external structure via the second bent wire, with at least a portion of the second external structure exposed within the flexible encapsulation. This design allows for greater flexibility in the ultrasonic sensor, facilitating wider application scenarios.

A voltage and current testing device of a perovskite photovoltaic cell comprises a camera obscura body, a testing platform deck, an electrical testing board and a light source, the testing platform deck, the electrical testing board and the light source are located in the camera obscura body, and the electrical testing board is arranged on the testing platform deck and provided with a plurality of rows of probes. The plurality of rows of probes are used for being electrically contacted with electrodes of a plurality of rows of perovskite photovoltaic cells on the perovskite photovoltaic substrate; the light source is arranged at the top of the camera obscura body, faces the test platform deck and is used for providing illumination for at least one row of perovskite photovoltaic cells in the multiple rows of perovskite photovoltaic cells in the test process; the system also comprises a volt-ampere measurement module which is electrically connected with the electrodes of the at least one row of perovskite photovoltaic cells through the electrical test board, so as to form a test loop of each perovskite photovoltaic cell in the at least one row of perovskite photovoltaic cells, and measure the voltage and current in each test loop. According to the scheme provided by the invention, the high-flux parallel test of the perovskite photovoltaic cell can be realized, and the test efficiency can be improved.

The invention relates to a heating element (1) with a carrier film (4), with two heating groups (5, 6), each having at least one heating zone (7) with PTC heating layers (9), and with at least two contact elements (10) arranged on the carrier film (4) for electrically contacting the PTC heating layers (9). The contact elements (10) each have a first, comb-shaped conductor structure (11) with electrically conductive contact electrodes (12) and a second, comb-shaped conductor structure (13) with electrically conductive contact electrodes (14) that interlock like fingers. Each heating group (5, 6) is assigned at least one contact element (10) such that the contact electrodes (12, 14) of a contact element (10) are electrically connected to at least the PTC heating layers (9) of the at least one heating zone (7) of a respective heating group (5, 6).The heating element (1) further comprises at least three electrically conductive busbars (16, 17, 18) which are electrically conductively connected to the two conductor structures (11) of the at least two contact elements (10). The invention also relates to an electric heating system (2) comprising at least one such heating element (1).

A display device includes a pixel circuit on a substrate and including a transistor, a first pixel electrode on the pixel circuit and electrically connected to the pixel circuit, a bank on the first pixel electrode and including first, second, third, and fourth open parts, a first contact electrode on the bank and the first and second open parts and in contact with the first pixel electrode through the first open part, a second pixel electrode overlapping the second and third open parts, the second pixel electrode and the first pixel electrode formed as a same layer, a second contact electrode on the bank and the third and fourth open parts and in contact with the second pixel electrode through the third open part, and a common pixel electrode overlapping the fourth open part, the common pixel electrode and the second pixel electrode formed as a same layer.

The invention belongs to the technical field of micro-nano semiconductor electronic devices, and discloses a reconfigurable field effect transistor based on different-surface contact electrodes and a preparation method of the reconfigurable field effect transistor. The transistor comprises a SiO2 / Si substrate, an hBN passivation layer, a source / drain Au electrode, a MoTe2 channel, an hBN dielectric layer, a graphene gate and a top gate Au electrode from bottom to top, the source electrode, the drain electrode and the channel form different-surface contact, and an air cavity is formed between the channel and the dielectric layer. The air cavity causes the top gate electric field to generate asymmetric regulation and control on the channel, so that one end of the channel is kept in an eigenstate, and the other end of the channel is regulated and controlled by the gate voltage to form an n-type or p-type region, thereby forming an ni or pi homojunction in the single channel, and realizing reconfigurable carrier transport polarity. The invention further provides a preparation method based on dry transfer, the process is simple, and the preparation method is suitable for a reconfigurable logic circuit and a nano electronic system.

An electrical device is specified. According to one embodiment, an electrical device includes an electrical element including two electrodes and two wires connected to the electrodes, where each wire includes a flat region constituting a wire end, and where the flat region is configured for contacting the electrodes. The invention further relates to a method for producing an electrical device.

The utility model discloses a motor positive and negative rotation rotary switch, which comprises an upper shell and a lower shell which are buckled, a shaft hole is arranged in the middle of the lower shell, and an electrode stem is rotatably arranged in the shaft hole; an elastic reset structure is arranged between the lower end of the electrode stem and the inner bottom wall of the lower shell; a damping rotation structure is matched between one side of the inner wall of the lower shell and the side wall of the electrode stem; the two sides of the upper end of the electrode rod further extend to form electrode connecting plates, contact pin electrode plates are further clamped on the electrode connecting plates, a first contact set and a second contact set are arranged on the inner wall of the upper shell and matched with the two extreme movement positions of the two electrode connecting plates respectively, and when the electrode rod rotates, the contact pin electrode plates are electrically connected with the first contact set or the second contact set. Compared with the prior art, the motor forward and reverse rotation switch has the advantages that the motor forward and reverse rotation switch is convenient to operate and use, can be used as a rotation type forward and reverse rotation switch, has a reset function, and has a cut-off interval during switching.

According to an aspect of the present disclosure, the display device includes: a substrate including a display area and a non-display area adjacent to the display area, a plurality of light emitting diodes disposed in the display area and each including a cathode, a contact electrode disposed in the non-display area, and a plurality of insulating layers disposed on the substrate. At least one of the plurality of insulating layers includes a plurality of protrusions disposed between the substrate and the contact electrode, and the contact electrode is composed of a convex portion overlapping with the plurality of protrusions and a concave portion between the plurality of protrusions. Therefore, according to the present disclosure, the surface area of the contact electrode is increased due to the plurality of protrusions so that a resistance between the contact electrode and the cathode can be reduced.

The application relates to the technical field of micro electro mechanical system (MEMS), and particularly relates to a MEMS switch and a preparation method thereof, wherein the MEMS switch comprises a support structure layer and an encapsulation structure; a cavity is released on the support structure layer, and a matching thin film and a static area are formed; the encapsulation structure and the support structure layer jointly form an airtight chamber; a piezoelectric actuator comprises a piezoelectric driving electrode and at least one layer of piezoelectric thin film; an electric contact structure comprises a dynamic contact electrode and a static contact electrode arranged in the airtight chamber; the dynamic contact electrode is arranged on the piezoelectric actuator, and the static contact electrode is arranged towards the dynamic contact electrode and fixedly arranged. The piezoelectric actuator and the dynamic contact electrode are directly prepared on a wafer base, and the static contact electrode opposite to the dynamic contact electrode is fixedly arranged in the encapsulation structure; by applying a forward voltage difference or a reverse voltage difference to the piezoelectric actuator, the on-off of the electric contact structure is realized, and the overall structure is simple and controllable.

A display device is provided. The display device comprises: a substrate; a pixel electrode disposed on the substrate; a first type light-emitting element disposed on the pixel electrode and having a contact electrode connected to the pixel electrode; a second type light-emitting element disposed on the pixel electrode and having a non-contact electrode; a filling layer filled between the first type light-emitting element and the second type light-emitting element; a connection electrode connecting the first type light-emitting element and the second type light-emitting element in series; and a common electrode disposed on the first type light-emitting element and the second type light-emitting element and electrically connected to the second type light-emitting element.

The application relates to the technical field of field effect transistor devices, and discloses a two-dimensional material field effect transistor and a preparation method thereof. The two-dimensional material field effect transistor comprises a substrate insulating layer, a gate layer, a gate contact electrode, a vertical electric field shielding structure, a second insulating layer and a conductive channel film which are arranged in a stack. A second step and a third step are formed on the side of the conductive channel film away from the second insulating layer; the second step and the third step are arranged along the stacking direction. A first contact electrode is formed on the second step surface through oblique angle deposition, and a second contact electrode is formed on the third step surface through oblique angle deposition; the side surface of the first contact electrode facing the third step is aligned with the end of the second step surface facing the third step. The first contact electrode and the second contact electrode are deposited through the oblique angle deposition mode, the dependence on a photoetching device and a overlay process precision in the development process of the existing field effect transistor is reduced, and the channel length and the gate length are simultaneously micronized.

The invention relates to the technical field of solar cells, and particularly discloses a crystalline silicon thermal electron solar cell and a photovoltaic module, which comprise a silicon substrate, and the silicon substrate comprises a P-type region and an n-type region positioned on one side of an illumination surface of the P-type region; the illumination surface of the silicon substrate is provided with a silver collection gate electrode, and the back side of the silicon substrate is provided with a silver extraction electrode; an Ag-Si semiconductor alloy junction is arranged at the position, corresponding to the silver collection gate electrode, in the silicon substrate, an n-type ultra-shallow diffusion layer is formed on the outer side of the Ag-Si semiconductor alloy junction, an n-P junction is formed between the n-type ultra-shallow diffusion layer and the P-type region, and the n-P junction and the n-P junction form a three-dimensional PN junction quantum well; the silver collection gate electrode and the Ag-Si semiconductor alloy structure form a contact electrode. Thermo-electron transmission is accelerated, thermo-electron extraction and utilization are realized, and the photoelectric conversion efficiency is further improved.

The invention discloses a display panel and a preparation method thereof, and a display device, and the display panel comprises a substrate which comprises a bonding pad region; the bonding electrode is arranged in the bonding pad area; a light-emitting element; the conductive adhesive layers are arranged between the bonding electrodes and the light-emitting elements, the light-emitting elements are in one-to-one correspondence with the bonding pad areas, the light-emitting elements comprise contact electrodes, and the contact electrodes are in one-to-one correspondence connection with the bonding electrodes through the conductive adhesive layers; first offset distances exist between the centers of the light-emitting elements and the centers of the bonding pad areas, and the absolute difference value between the first offset distances corresponding to any two light-emitting elements in the first direction does not exceed 5 micrometers. According to the display panel provided by the embodiment of the invention, the absolute difference value of the first offset distance in any two light-emitting elements distributed along the first direction does not exceed 5 microns, so that the problem that the offset between the light-emitting elements and the bonding pad region is gradually increased due to thermal expansion in the bonding process from the center to the edge direction is solved, and the yield of the light-emitting elements is improved. And part of the light-emitting elements are too large in deviation.

A semiconductor device includes a base insulating layer comprising an upper surface and a lower surface opposing one another, a channel structure on the upper surface of the base insulating layer, a gate structure surrounding the channel structure, source / drain patterns on the upper surface of the base insulating layer and connected to the channel structure, power rails on the lower surface of the base insulating layer, and one or more lower contact electrodes connecting one or more of the power rails to one or more of the source / drain patterns, wherein a lower surface of a first lower contact electrode of the one or more lower contact electrodes is positioned at a level higher than the lower surface of the base insulating layer.

The application discloses a method for non-contact testing of quantum efficiency (EQE) and short-circuit current (ISC) of a solar cell, relates to the technical field of photovoltaic device testing, and aims to solve the problems that the existing quantum efficiency and short-circuit current measurement must contact electrodes, is slow and cannot cover new gateless or process pieces; a non-contact testing method of "multi-wavelength LED excitation + local shielding + carrier lateral diffusion" is provided; the method blocks the excitation light by using a shielding filter, and only transmits the electroluminescence signal of the shielding area; the EL power of each wavelength is extracted through phase-locked amplification and deep learning denoising, the continuous EQE curve is calculated by using the calibrated incident photon flux ratio, and the ISC is obtained by convolution of the AM1.5 spectrum.

The present application relates to rainwater collection and utilization technical field, disclose a kind of drainage pipe network overflow pollution reduction and resource utilization method, comprising: installing heteromorphic turbulence unit in pipe network water inlet to induce pipe wall mechanical vibration, vibration signal is collected using acoustic detection unit and extracting main vibration frequency, simultaneously using non-contact electrode to collect fluid conductivity signal, based on signal time delay calculation fluid real-time flow rate, according to real-time flow rate correction main vibration frequency obtains characteristic frequency deviation, weighted calculation characteristic frequency deviation and conductivity signal instantaneous gradient, and generate split characteristic value, extract low-frequency energy distribution in vibration signal to determine scour intensity index, according to split characteristic value and scour intensity index switch flow path, the present application is decoupled by acoustoelectric coupling to flow state and concentration, effectively capture sediment starting feature, improve overflow pollution monitoring precision and prediction ability.

An electrical memristive device has a layer structure. The later structure comprises two electrodes and a trilayer material arrangement that connects the two electrodes. The trilayer material arrangement may, for example, be sandwiched by the two electrodes, in direct contact therewith. The trilayer material arrangement includes an HfOx layer, where 1.3±0.1≤x<1.9±0.1, a WOy layer in direct contact with the HfOx layer, where 1.9±0.1≤y<2.1±0.1 and a WOz layer in direct contact with the WOy layer, where 2.9±0.1≤z<3.1±0.1. One electrode is in contact with the HfOx layer while the other electrode is in direct contact with the WOz layer. Optionally, the oxygen concentration of the WOz layer can have a gradient which is lower when its contacting electrode is tungsten.

The invention discloses a low-warping-degree thin film solar cell manufacturing method, and aims to solve the warping problem caused by mismatching of material intrinsic stress and thermal expansion coefficient in cell preparation. According to the technical scheme, when an epitaxial wafer is preprocessed, an Au contact layer, a compressive / tensile stress metal alternating film layer and an Au bonding layer are sequentially evaporated; when the thin film supporting substrate is pretreated, a Cr-Ti-Pt-Au bonding layer is evaporated on one side, a silicon nitride, silicon oxide or aluminum oxide warping adjustment layer is prepared on the other side, and photoetching trepanning and evaporation of a back contact electrode are required to be performed on the warping adjustment layer for an electrode structure on the different side; and after contraposition permanent bonding, a finished product is obtained through temporary bonding, substrate removal, photoetching coating, antireflection film evaporation and alloy treatment. Internal and external stress is offset through the double-layer warping adjusting structure, the same-side electrode structure and the different-side electrode structure are adapted, the process is mature and easy to popularize, the warping degree of the battery is effectively reduced, and the product yield and the use reliability are remarkably improved.