The invention relates to a preparation method of a local ITO interconnected
perovskite-TOPCon laminated
cell, which comprises the following steps: taking an n-type
monocrystalline silicon wafer as a substrate, cleaning and texturing, diffusing
boron on the back to form a P + emitter, oxidizing at high temperature, and treating the surface through
acid etching and alkali
polishing; sequentially preparing a tunneling
oxide layer and a
phosphorus-doped
polycrystalline silicon layer on the front surface, annealing and crystallizing, depositing an aluminum
oxide film and a multi-layer
silicon nitride film on the back surface after cleaning, and depositing a single-layer
silicon nitride film on the front surface; preparing a back
metal electrode,
etching according to a designed pattern to remove a local
silicon nitride film on the front surface, sequentially preparing an ITO
interconnection layer, a
hole transport layer, a
perovskite layer, a
passivation layer, an
electron transport layer and an ITO transparent conductive layer on the front surface, and finally preparing a front
metal electrode and solidifying to form a
contact electrode. According to the invention, the problems of back
corrosion risk, effective area loss and tedious process in the existing method are solved, full-size manufacturing is realized, the
cell performance is improved, and industrialization is easier.