The invention relates to an InP-based back incidence coplanar
electrode position sensitive
detector, which belongs to the technical field of photoelectric detectors, and is characterized in that an array is formed by a plurality of back incidence PSD units, the upper
layers of the back incidence PSD units share a
cathode, and an innovative structure capable of generating a better
photoelectric effect is adopted; a common
cathode layer, a P-type heavily doped layer for
ohmic contact, a high-resistance
silicon substrate layer and an InP dioxide substrate layer are sequentially arranged along the direction of incident light, a photosensitive area, a frame area and an isolation area are sequentially arranged on the lower portion of the high-resistance
silicon substrate layer from inside to outside, and
metal anodes are implanted in the positions of four end points of the InP dioxide substrate in contrast with the frame area. The structure greatly reduces the PSD array gap, eliminates the sampling blind area, has the advantages of simple
signal processing, higher
detection rate, high integration level, low cost, simple process and the like, and can be widely applied to the fields of
wavefront detection,
pose detection and the like to meet the various requirements of manufacturing super-
large target surface, high-speed and high-density detectors and the like.