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Antistatic polyethylene composite film and preparation method thereof
The invention relates to the technical field of polymeric membrane materials, and particularly discloses an antistatic polyethylene composite membrane and a preparation method thereof. Comprising the following raw materials in parts by weight: 100 parts of low-density polyethylene, 5-9 parts of high-density polyethylene, 10-20 parts of maleic anhydride grafted polyethylene, 8-15 parts of a polyvinyl alcohol modified material, 3-5 parts of antistatic modified carbon black, 0.5-1 part of an antioxidant and 1-2 parts of a dispersing agent, the polyethylene composite film has excellent dispersibility, can effectively enhance the mechanical properties of the polyethylene composite film through the synergistic effect of physical filling and chemical grafting, forms a layer of conductive network structure, namely a conductive film, on the surface of the material through the combined effect of the polyethylene composite film and the antistatic agent, prevents the generation and accumulation of static electricity, and has good compatibility among the raw materials. And the material has excellent mechanical property and antistatic property.
Owner:QINGZHOU HUASONG PLASTIC IND CO LTD
Back contact photovoltaic module
The invention relates to the technical field of photovoltaic, in particular to a back contact photovoltaic module which comprises battery strings and bus bars, each battery string comprises battery pieces and welding strips, the welding strips are connected with the adjacent battery pieces, and the bus bars are connected with the adjacent battery strings; first grid lines with different polarities are arranged on the back surfaces of the battery pieces, the bus bars are arranged on the back surfaces of the battery pieces, the first grid lines extend in the first direction, and the bus bars extend in the second direction; an insulating film is arranged between the bus bar and the first grid line of one polarity, and a conductive film is arranged between the bus bar and the first grid line of the other polarity. In the invention, the bus bar is directly connected with the positive electrode first grid line or the negative electrode first grid line, so that a welding strip does not need to be arranged between the bus bar and the positive electrode first grid line or the negative electrode first grid line, the length of the welding strip can be shortened, the use amount of the welding strip is reduced, and the production cost is reduced. And the bus bar is directly arranged on the back surface of the battery piece, so that the area ratio of the battery piece in the back contact photovoltaic module can be improved, and the photoelectric conversion efficiency is improved.
Owner:JINKO SOLAR (HAINING) CO LTS
Back contact cell and manufacturing method therefor
The present application relates to the technical field of back contact cells, and in particular to a back contact cell and a manufacturing method therefor. The back contact cell comprises a silicon wafer, a first semiconductor layer, a second semiconductor layer, and a conductive film layer, wherein isolation grooves are formed in the conductive film layer. The back contact cell further comprises a plurality of insulating ink layers which are all disposed between the second semiconductor layer and the conductive film layer and arranged at intervals along a back surface in an X-axis direction, wherein the insulating ink layers are in direct contact with the second semiconductor layer, and in the X-axis direction, the insulating ink layers stretch across the edges of the side surfaces of second semiconductor opening regions and each have two ends extending respectively. The insulating ink layer satisfies the following conditions: the surface pencil hardness is not less than 2H, the resistivity is greater than 1e11Ω·cm, and the mass content of volatile substances in raw materials of the insulating ink layer is not greater than 5%. The present application can effectively avoid electric leakage and improve the cell conversion efficiency and the cell yield, and the technological process of manufacturing is simpler.
Owner:GOLDEN SOLAR (QUANZHOU) NEW ENERGY TECH CO LTD
Lightweight absorption-transmission integrated metamaterial to electromagnetic waves with polarization stability and wide-incident-angle stability, and preparation method thereof
A lightweight absorption-transmission integrated metamaterial to electromagnetic waves with polarization stability and wide-incident-angle stability, which has a symmetric structure including at least one square frequency-selective structure-unit arranged periodically. The square frequency-selective structure-unit includes a first dielectric substrate, a metal array structure layer, a second dielectric substrate, a first carbon-based conductive film array structure layer, a third dielectric substrate, and a second carbon-based conductive film array structure layer, which are laminated in sequence with the first dielectric substrate as the bottom. A method for preparing such lightweight absorption-transmission metamaterial to electromagnetic waves is also provided.
Owner:ZHONGBEI UNIV +1
Back contact battery, preparation method thereof and battery assembly
The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell, a preparation method thereof and a cell assembly. A second semiconductor layer comprises an intrinsic silicon layer and a second doped silicon layer; the second doped silicon layer comprises second doped microcrystalline silicon and second doped amorphous silicon located at the overlapping region, and further comprises an amorphous silicon insulating layer, and the amorphous silicon insulating layer is located outside the second doped amorphous silicon and does not cover the second doped microcrystalline silicon; an isolation groove is formed in the part, located in the overlapping area, of the conductive film layer, and a distance is reserved between the isolation groove and the junction of the side face of the first semiconductor layer and the second semiconductor layer. Leakage current generated at the junction of the side face of the first semiconductor layer and the second semiconductor layer can be remarkably reduced, meanwhile, the passivation effect of the second semiconductor layer is guaranteed, the isolation groove does not need to stretch across the junction, the second semiconductor layer cannot be damaged, the parallel resistance of the battery is improved, and the current and efficiency of the battery are improved.
Owner:GOLD STONE (FUJIAN) ENERGY CO LTD
Conductive film, metal grid touch screen sensor, touch module and preparation method thereof
PendingCN120600377AConductive layers on insulating-supportsApparatus for manufacturing conducting/semi-conducting layersQuality of visionTouchscreen
The embodiment of the invention provides a conductive film, a metal grid touch screen sensor, a touch module and a preparation method of the conductive film. The problem that in the prior art, a conductive film is prone to breakage after being bent for multiple times is solved. The conductive film includes a substrate layer, a first conductive layer, and a first outer blackening layer. The substrate layer is provided with a first surface and a second surface which are oppositely arranged along the thickness direction of the substrate layer; the first conductive layer comprises a plurality of first conductive sub-layers, the plurality of first conductive sub-layers are sequentially stacked on the first surface of the substrate layer, the thickness of each first conductive sub-layer is smaller than a first preset value, and the number of the first conductive sub-layers is larger than a second preset value; the first outer blackening layer is stacked on the first conductive sub-layer on the outermost layer. The touch module prepared from the conductive film provided by the embodiment of the invention has the advantages of good fracture resistance and high visual quality.
Owner:HUIZHOU MESH SENSOR TECH CO LTD
Conductor galloping and sag monitoring method and system based on Beidou differential analysis
The invention discloses a conductor galloping and sag monitoring method and system based on Beidou differential analysis. The method comprises the following steps: monitoring a lead position, a conductivity change rate, a surface temperature and electric field intensity data of different heights, and calculating an electric field intensity gradient sequence between adjacent heights; and in the incremental time interval, determining a signal drift coefficient according to the incremental wire position data and the incremental electric field intensity data. When the conductivity change rate is greater than a preset threshold value and the surface temperature of the wire is lower than the dew point temperature, multiplying the signal drift coefficient by the ratio of the conductivity change rate to a preset reference rate to obtain a conductive film correction coefficient, and taking the product of the correction coefficient and the real-time electric field intensity as a correction amount; and deducting from the real-time wire position data to obtain correction data. By implementing the technical scheme provided by the invention, the accuracy of the lead position monitoring data in the salt water mist environment is improved.
Owner:ANHUI JIANCHI INTELLIGENT TECH CO LTD
Back contact battery with specific passivation structure and manufacturing method and application thereof
ActiveCN119866068AFinal product manufactureLaser beam welding apparatusElectrical batteryMaterials science
The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell with a specific passivation structure and a manufacturing method and application of the back contact cell. A second semiconductor layer in the back contact cell comprises an amorphous silicon layer and a second doped crystalline silicon layer which are sequentially arranged from the back face of a silicon wafer to the outside; the second doped crystalline silicon layer comprises a second doped microcrystalline region and second doped amorphous regions located on the two sides of the second doped microcrystalline region, the second doped microcrystalline region is located at the position corresponding to the second semiconductor opening region and makes contact with the conductive film layer, and the second doped amorphous regions are laid at the end of the side face of the first doped polycrystalline silicon layer and outside the back face of the adjacent part of the first doped polycrystalline silicon layer; wherein the crystallization rate of the second doped microcrystalline region is 5%-80%. According to the invention, the bulk resistivity of the second doped crystalline silicon layer can be greatly reduced, and the contact resistivity between the second doped crystalline silicon layer and the conductive film layer is also reduced, so that the series resistance of the cell is greatly reduced, the leakage current is effectively avoided, and the cell efficiency is improved.
Owner:GOLDEN SOLAR (QUANZHOU) NEW ENERGY TECH CO LTD
Power transmission line self-adaptive ice melting device capable of resisting ice and snow disasters
The invention, which belongs to the technical field of power transmission line deicing, discloses an ice and snow disaster-resistant power transmission line adaptive ice melting device comprising an annular body of which the inner diameter is adaptive to the outer diameter of a power transmission line and which is used for being fixed on the power transmission line in a surrounding manner; the distributed temperature sensor array is uniformly embedded in the inner surface of the annular body and is used for monitoring the surface temperature distribution of the power transmission line in real time; the heating element layer covers the periphery of the annular body, comprises at least two conductive film layers which are insulated from each other, and is used for generating Joule heat in gradient distribution; and the control module is arranged in the waterproof cavity at the side part of the annular body, is electrically connected with the temperature sensor array and the heating element layer, and is used for dynamically adjusting heating parameters according to the temperature data. When temperature values of more than three adjacent sensors are detected to be lower than a freezing point threshold value, a gradient heating program is started, the current density of each conductive film layer is dynamically adjusted according to an icing thickness calculation model, and melting and falling of an ice layer are realized.
Owner:STATE GRID HENAN ELECTRIC POWER COMPANY ANYANG POWER SUPPLY
Preparation process of high-transmittance ITO (Indium Tin Oxide) conductive glass
The invention provides a high-transmittance ITO conductive glass preparation process, and belongs to the technical field of conductive glass preparation, and the high-transmittance ITO conductive glass preparation process comprises the following steps: S1, cleaning a substrate: carrying out ultra-clean cleaning on a glass substrate to remove oil stains and impurities on the surface, and blow-drying by adopting a high-pressure air knife; s2, coating pretreatment: feeding the cleaned glass substrate into a coating chamber, and carrying out pretreatment before coating; s3, forming a SiO2 film: adopting a medium-frequency coating process, obtaining the SiO2 film through medium-frequency reactive sputtering of a Si target, reducing the quantity of electric charges accumulated on the surface of the SiO2 film, and reducing the probability of abnormal discharge; s4, forming an ITO film: continuously coating the SiO2 film to form an ITO conductive film; and S5, post-treatment: carrying out annealing and cleaning post-treatment on the coated glass so as to improve the stability and adhesive force of the film layer. According to the invention, a traditional radio frequency sputtering SiO2 film forming process is replaced by an intermediate frequency coating process, so that the quantity of electric charges accumulated on the surface of the SiO2 film is reduced, the probability of abnormal discharge is reduced, and the product quality is effectively ensured.
Owner:ZHEJIANG LAIBAO TECH CO LTD
Back contact battery of opening semiconductor without etching and preparation method of back contact battery
The invention belongs to the technical field of back contact cell preparation, and particularly relates to a back contact cell of an opening semiconductor without etching and a preparation method thereof, and the method comprises the steps: S103, carrying out the polishing or texturing of the back surface of a silicon wafer obtained in S102; s104, depositing an intrinsic crystalline silicon layer on the back surface of the silicon wafer; s105, the non-target deposition area is masked through a hard mask plate, and N-type crystalline silicon layers which are alternately arranged are deposited on the back face; replacing the mask of the hard mask plate to form a P-type crystalline silicon layer and an overlapping region; s106, depositing a conductive film layer on the back surface of the silicon wafer; s107, an opening is formed in the conductive film layer to form an isolation groove, and the width W4 of the isolation groove is controlled to range from 0.03 mm to 0.15 mm; and S108, forming a metal electrode on the back surface. According to the invention, the back semiconductor does not need to be opened by etching, the technological process is greatly simplified, etching damage is avoided, and the cell conversion efficiency, the cell stability and the production yield are improved.
Owner:GOLD STONE (FUJIAN) ENERGY CO LTD
CARBON-BASED CONDUCTIVE FILM-BASED ULTRALIGHT WIDE-ANGLE ABSORBING METAMATERIAL WITH FULL-FREQUENCY ABSORPTION WITHIN 2-18 GHz AND PREPARATION METHOD THEREOF
A carbon-based conductive film-based ultralight wide-angle absorbing metamaterial with full-frequency absorption within 2-18 GHz, including a first dielectric substrate, a first carbon-based conductive film array structure layer, a second dielectric substrate, a second carbon-based conductive film array structure layer, a third dielectric substrate, and a third carbon-based conductive film array structure layer, which are laminated in sequence with the first dielectric substrate as a bottom. The first, second, and third carbon-based conductive film array structure layers are each composed of discrete carbon-base conductive film patches arranged in a periodic array. A method for preparing such absorbing metamaterial is also provided.
Owner:ZHONGBEI UNIV
Conductive paste, and conductive film and preparation method therefor
PCT designated stage expiredWO2025102314A1Non-conductive material with dispersed conductive materialCable/conductor manufactureConductive pastePolymer science
The embodiments of the present application relate to the technical field of new materials. Disclosed are a conductive paste, and a conductive film and a preparation method therefor. The conductive paste comprises a matrix resin, a composite silver powder, carbon nanotubes, and a curing agent, wherein the composite silver powder comprises a flaky silver powder having a D50 of 0.7-2.0 μm and a spherical silver powder having a D50 of 0.4-0.8 μm; the mass ratio of the composite silver powder to the matrix resin is 8:2-16:1; and the mass of the carbon nanotubes is 0.01-0.1% of the mass of the matrix resin, and the mass of the curing agent is 0.1-0.5% of the mass of the matrix resin. In the embodiments, the conductive paste has a multi-scale composite network structure after being cured, and therefore the conductive paste can respond to deformation in time and prevent crack propagation, has improved bending and tensile resistance, and still maintains good electrical properties while responding to deformation. Therefore, the conductive film prepared by using the conductive paste has good bending and tensile resistance, and still maintains good electrical properties while responding to deformation.
Owner:GUANGZHOU SHIYUAN ELECTRONICS CO LTD +1
Solar cell containing copper metal electrode and solar cell module
The utility model discloses a copper-containing metal electrode solar cell and a solar cell module, and belongs to the technical field of solar cells, the copper-containing metal electrode solar cell comprises a silicon wafer, a first semiconductor layer, a second semiconductor layer, a conductive film layer, a copper-containing metal fine gate electrode and protective ink; a second semiconductor opening region is formed between the adjacent first semiconductor layers; an isolation groove is formed in the conductive film layer corresponding to the edge area of the second semiconductor opening area; the conductive film layer corresponding to each first semiconductor layer and each second semiconductor layer is provided with a copper-containing metal fine gate electrode; and the protective ink covers the copper-containing metal fine gate electrode, and / or the protective ink covers the isolation groove. According to the utility model, the long-term reliability of the module is improved, the technical requirements on packaging materials are reduced, the product cost is effectively reduced, and the application scene of packaging the copper-containing metal electrode solar cell into the module is expanded.
Owner:GOLD STONE (FUJIAN) ENERGY CO LTD
Back contact cell capable of reducing thickness difference between N-type region and P-type region, and preparation and application thereof
The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell capable of reducing the thickness difference between an N-type region and a P-type region and preparation and application of the back contact cell capable of reducing the thickness difference between the N-type region and the P-type region. Wherein the surface of one side, far away from the crystalline silicon substrate, of the amorphous silicon layer is provided with an N-type region and a P-type region which are alternately formed, the N-type region comprises an N-type doped base layer and an N-type transition layer, and the P-type region comprises a P-type doped base layer and a P-type transition layer; wherein the content ratio of phosphorus to silicon in the N-type doped base layer is smaller than 1, the content ratio of phosphorus to silicon in the N-type transition layer is larger than 1, the content ratio of boron to silicon in the P-type doped base layer is smaller than 1, and the content ratio of boron to silicon in the P-type transition layer is larger than 1. The vertical contact resistance can be obviously reduced while the thickness difference between the N-type region and the P-type region is reduced, the high cell conversion efficiency is obtained, the stability of the cell is improved, and the service life of the cell is prolonged; meanwhile, the risk of film explosion in the subsequent process is reduced, and the edge compounding problem is relieved.
Owner:GOLD STONE (FUJIAN) ENERGY CO LTD
Back contact battery and preparation method thereof
The invention belongs to the field of solar cells, relates to a back contact cell and a preparation method thereof, and can improve the conversion efficiency, and the back contact cell comprises a semiconductor substrate which comprises a front surface and a back surface; the first semiconductor layers and the second semiconductor layers are alternately arranged on the back face in the X-axis direction, the edges of the first semiconductor layers and the edges of the second semiconductor layers form an overlapping area in the Z-axis direction, first grooves are formed between the adjacent second semiconductor layers, second grooves are formed in the outer surfaces of the second semiconductor layers, and the first grooves are communicated with the second grooves. The conduction type of the second semiconductor layer is opposite to that of the first semiconductor layer; the conductive film layer is arranged on the outer surfaces of the first groove, the second groove and the overlapping area, two first isolation areas are arranged on the conductive film layer at intervals and correspond to the groove bottom of the second groove, and each first isolation area comprises at least one first isolation groove formed in the X-axis direction at intervals.
Owner:ZHEJIANG JINKO SOLAR CO LTD
Conductive nanofiltration membrane, roll type conductive membrane filter element and nanofiltration separation method
ActiveCN121060321AWater/sewage treatment by magnetic/electric fieldsReverse osmosisChemical physicsWater production
The invention belongs to the field of membrane separation, and provides a conductive nanofiltration membrane, a roll type conductive membrane filter element and a nanofiltration separation method.The conductive nanofiltration membrane comprises a substrate layer, a conductive layer and a separation layer and is prepared through a two-step vacuum filtration process and a vacuum filtration assisted in-situ interfacial polymerization method; meanwhile, good conductivity and selective separation capability are realized. In addition, the invention also provides a roll-type conductive membrane filter element based on the conductive nanofiltration membrane, and the roll-type conductive membrane filter element comprises the conductive nanofiltration membrane, a central conduit with a plurality of side holes, a water production diversion separation net, a water inlet diversion separation net, a counter electrode conductive layer, a conductive connector lug and a metal sheet (used for power connection), the roll type conductive membrane filter element can dynamically regulate and enhance the separation performance of charged molecules, ions and the like under the action of an electric field, and has the characteristics of simple structure, easiness in operation and amplification and adjustable and controllable membrane performance.
Owner:SHANDONG UNIV
Heterojunction cell and photovoltaic module
The utility model discloses a heterojunction cell and a photovoltaic module, and relates to the technical field of photovoltaics. The heterojunction cell comprises a first transparent conductive layer, an n-type microcrystalline silicon layer, a first intrinsic amorphous silicon layer, an n-type monocrystalline silicon layer, a second intrinsic amorphous silicon layer, a p-type microcrystalline silicon layer and a second transparent conductive layer which are stacked in sequence. The heterojunction cell also includes a first electrode connected to the first transparent conductive layer and a second electrode connected to the second transparent conductive layer. Wherein the first transparent conductive layer comprises a first zinc oxide layer, a first indium tin oxide layer and a first titanium oxide layer which are stacked in sequence. The transparent conductive layer is arranged to be a composite layer structure made of three materials, so that the use amount of expensive indium tin oxide can be remarkably reduced, and the cost is reduced. The first conductive film with the composite layer structure can also relieve the problem of ultraviolet-induced degradation of the heterojunction cell, improve the performance stability of the cell and prolong the service life of the cell.
Owner:SOLARSPACE NEW ENERGY (CHUZHOU) CO LTD
Special solid aluminum capacitor for electronic detonator with ultralow electric leakage characteristic and preparation method thereof
The invention discloses a special aluminum fixing capacitor for an electronic detonator with ultralow electric leakage characteristic and a preparation method thereof, the capacitor comprises a positive foil electrode, a negative foil electrode, an aluminum foil or an aluminum alloy foil coated with an oxide film on the surface, electrolytic paper and an electrolyte, and the electrolyte can be a phosphate-based electrolyte, a borate-based electrolyte or an organic electrolyte containing high-conductivity salt, and an additive, the preparation method comprises the following steps: slitting positive and negative foils and electrolytic paper, winding the positive and negative foils and the electrolytic paper to form a concentric circle, forming a repair oxide film, dipping a conductive polymer material, baking and polymerizing to form a conductive film, injecting a pouring sealant into an aluminum shell, and carrying out heat treatment to obtain the conductive aluminum shell. The formation liquid is ammonium dihydrogen phosphate, ammonium adipate or boric acid aqueous solution, and the pouring sealant is epoxy resin or polyurethane; the capacitor has an ultra-low electric leakage characteristic, is suitable for being used as a power supply energy storage element in an electronic detonator system, stabilizes power supply output and inhibits an electric leakage phenomenon.
Owner:YIYANG WANJINGYUAN ELECTRONICS +1
Method for measuring fluorine distribution rate in mineral raw material by using BPMA system
The invention relates to a method for measuring the fluorine distribution rate in a mineral raw material by using a BPMA system, and the method comprises the following steps: pretreating a sample to be measured to obtain a polished section sample of which the surface is plated with a carbon conductive film; placing the X-ray plate sample and the gold standard sample in a scanning electron microscope of a BPMA system, and determining test conditions by adopting a back scattering electron imaging mode; carrying out automatic measurement by adopting a BPMA system, and determining the composition and the mass percentage content ratio of minerals in the sample and the mass percentage content of fluorine in each mineral; and calculating the grade of fluorine in the sample and the distribution rate of fluorine in the mineral. The method provided by the invention has the advantages of simple sample preparation, modularized test process, convenient and reliable data acquisition and the like, and can be widely applied to research on the distribution rate of valuable elements in mineral raw materials.
Owner:GANJIANG INNOVATION ACAD CHINESE ACAD OF SCI
All-solid-state inorganic electrochromic glass preparation method and monitoring regulation and control system
ActiveCN119797773AMeasurement devicesProgramme control in sequence/logic controllersAll solid stateControl system
The invention provides an all-solid-state inorganic electrochromic glass preparation method and a monitoring regulation and control system, and relates to the technical field of glass preparation, and the method comprises the following steps: APCVD deposition of a film layer: plating a glass substrate with a first conductive film layer; plating a first insulating layer on the first conductive film layer; plating a main color-changing layer on the first insulating layer to obtain an electrochromic layer; pVD film layer deposition: plating a second insulating layer on the electrochromic layer; plating an electrochromic storage layer on the second insulating layer; and plating a second conductive layer on the electrochromic storage layer. By combining the APCVD and PVD processes, double reduction of equipment investment and material cost is realized, accurate control of the APCVD process and high deposition rate of the PVD process are combined, effective deposition rate is increased, uniformity and quality of a film layer are ensured, and two insulating layers are added on two sides of the electrochromic layer, so that electric leakage is effectively reduced, and the electrochromic effect is improved. The energy loss is reduced, and the aging process of the film layer is slowed down.
Owner:ANHUI ZHIYUN NEW MATERIAL TECHNOLOGY CO LTD
Preparation method of flexible integrated electrochromic device
The invention provides a preparation method of a flexible integrated electrochromic device, which comprises the following steps: S1) mixing a crosslinking component A and a solvent to prepare a crosslinking component A premixing system; mixing the crosslinking component B with a solvent to prepare a crosslinking component B premixing system; the premixing system of the crosslinking component A and / or the premixing system of the crosslinking component B also comprises a non-crosslinking component; compounding a conductive layer on the surface of the flexible substrate layer to obtain a conductive film layer; s2) uniformly mixing the premixing system of the crosslinking component A and the premixing system of the crosslinking component B to form electrochromic slurry, and coating the electrochromic slurry on the surface of the conductive film layer; s3) combining the films, curing the electrochromic slurry, and forming a composite layer sequentially comprising a first flexible substrate surface, a first conductive layer, an integrated electrochromic layer, a second conductive layer and a second flexible substrate surface; and S4) performing laser slicing, electrode pasting and packaging to obtain the flexible integrated electrochromic device. According to the invention, the preparation of the flexible integrated electrochromic device can be completed very simply.
Owner:FENSHIPU CO LTD
Lithium ion conductive dense film and preparation method and application thereof
The invention relates to a lithium ion conductive dense membrane and a preparation method and application thereof. The lithium ion conductive dense membrane comprises a polymer base membrane, ion conductive inorganic particles and a polymer solid electrolyte, the polymer base membrane is of a net structure; the Gurley value of the lithium ion conductive dense film is larger than or equal to 1000, and the porosity is smaller than or equal to 5%. The lithium ion conductive dense membrane provided by the invention has the advantages of high lithium ion conductivity, high transport efficiency and high lithium ion selectivity, and can be applied to electrodialysis lithium extraction. And under the action of external voltage, lithium ions are directionally migrated to the air negative electrode subjected to oxygen reduction reaction through the lithium ion conductive dense membrane to form a lithium hydroxide solution, and other metal hetero-ions are isolated on the positive electrode side by the lithium ion conductive dense membrane, so that lithium enrichment is realized. And meanwhile, transportation of the membrane to lithium ions does not depend on pores in the conductive membrane, so that the service life can be prolonged while the lithium ion separability and the transportation efficiency of the salt lake lithium extraction method are improved.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Air pressure switch, power distribution module, battery pack and thermal runaway alarm method of battery pack
PendingCN120600582ABatteries circuit arrangementsFluid pressure measurementElectrical batteryBattery cell
The invention relates to the technical field of air pressure switches, in particular to an air pressure switch, a power distribution module, a battery pack and a thermal runaway alarm method of the battery pack. At least part of the diaphragm assembly is conductive, the diaphragm assembly divides an inner cavity of the shell into a first cavity and a second cavity which are separated from each other, and the shell is provided with a first vent hole communicating the first cavity with the outside of the shell; the number of the connecting terminals is at least one, and the connecting terminals are arranged in the second cavity; and the diaphragm assembly is configured to move along with the air pressure difference between the first chamber and the second chamber, so that the conductive part of the diaphragm assembly is in contact with or separated from the connecting terminal. According to the air pressure switch provided by the invention, the detection sensitivity of the air pressure switch is improved, and the accuracy of pressure detection alarm is further improved.
Owner:BYD CO LTD
Wafer placement table
A wafer placement table includes a resin layer joining a ceramic plate and a conductive plate. The ceramic plate has an insulative gas passage plug. The resin layer has a resin layer through portion that is larger than the insulative gas passage plug in plan view. The conductive plate has a gas introduction path communicating with the insulative gas passage plug via the resin layer through portion. A conductive film is provided in the lower surface of the ceramic plate and is larger than the resin layer through portion in plan view. A conductive connecting portion is provided in the gas introduction path and is smaller than the resin layer through portion in plan view. The conductive connecting portion electrically connects the conductive film and the conductive plate to each other and allows the gas to flow from the gas introduction path to the insulative gas passage plug.
Owner:NGK INSULATORS LTD
Paste and conductive film and their production methods
ActiveUS12431258B2Conductive layers on insulating-supportsTitanium carbideCarbon atomConductive membrane
A paste that includes particles of a layered material in an ammonia aqueous solution. The particles include one or plural layers, the layers having a layer body represented by MmXn, wherein M is at least one metal of Group 3, 4, 5, 6, or 7, X is a carbon atom, a nitrogen atom, or a combination thereof, n is not less than 1 and not more than 4, and m is more than n but not more than 5, and a modifier or terminal T exists on a surface of the layer body, wherein T is at least one selected from the group consisting of a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, and a hydrogen atom, wherein the paste has a viscosity of 1 Pa·s or more at a shear velocity of 1 / s when the paste has a solid content concentration of 1.0% by mass.
Owner:DREXEL UNIV +1
Metal grid flexible transparent conductive film and its preparation method and applications
ActiveUS20250118454A1Conductive layers on insulating-supportsLayered productsFlexible electronicsElectronic conductivity
A metal grid flexible transparent conductive film and its preparation method and applications are provided. The conductive film has a flexible substrate and a sputtered metal grid, the metal grid forming various desired patterns on the flexible substrate. Magnetron sputtering method is used to accurately control the thickness of the metal grid layer by controlling the deposition time, so as to prepare a flexible transparent conductive film with good quality, high transmittance, high conductivity and strong bending resistance. The conductive film can be used as a flexible transparent electrode material with excellent properties, and can satisfy the demand of flexible display screen or flexible electronics, and the preparation process is simple, safe and non-toxic, and it can be convenient to prepare a large-area metal grid.
Owner:CITY UNIVERSITY OF HONG KONG SHENZHEN FUTIAN RESEARCH INSTITUTE
Low-reflection type electromagnetic shielding composite paper and preparation method thereof
PendingCN120625427ASurface covering paperMagnetic/electric field screeningPolymer sciencePlant fibre
The invention discloses low-reflection type electromagnetic shielding composite paper and a preparation method thereof, and belongs to the technical field of electromagnetic shielding. The invention provides low-reflection type electromagnetic shielding composite paper which is of a sandwich structure and is sequentially composed of an aerogel film layer, a conductive paper layer and a conductive thin film layer. Wherein the aerogel film layer is composed of a cellulose nanofiber base material, a cross-linking agent and a conductive filler; the conductive paper is obtained by impregnating plant fiber-based body paper with a dispersion liquid of a conductive filler; the conductive film is composed of nanocellulose fibers and a conductive filler. The electromagnetic shielding paper has a unique layered structure, and impedance matching of the electromagnetic shielding paper is improved through interlayer conductive gradient. The prepared low-reflection type electromagnetic shielding paper has excellent electromagnetic shielding performance and ultralow reflection efficiency at the same time.
Owner:JIANGNAN UNIV
Shoe insulating property detection device
Owner:SHANDONG ZITING SECURITY TECH CO LTD
Flexible large strain sensor, method of manufacture and use
The present application relates to the technical field of flexible sensor, and discloses a flexible large-strain sensor, a preparation method and application, aiming to solve the problems of small range, poor adhesion of traditional sensors in large-strain monitoring of solid engine grain and other soft materials, and poor signal linearity and repeatability, complex preparation process and high cost of existing flexible sensors. A polymer film is used to make a flexible insulating substrate; a conductive film is prepared on the flexible insulating substrate to form a composite film layer structure; according to a preset pattern of the conductive film, laser etching and scribing are performed on the conductive film according to a first type of vector track, only penetrating the conductive film, to divide out strain resistance and other resistance, forming an off-axis serpentine structure; according to a preset pattern of the flexible insulating substrate, laser etching and scribing are performed on the composite film layer structure according to a second type of vector track, penetrating the composite film layer structure, to etch out the flexible insulating substrate of the sensor; lead-out wires are welded on the lead-out electrodes and encapsulated to obtain the flexible large-strain sensor.
Owner:NAT UNIV OF DEFENSE TECH