1142 results about "Conductive membrane" patented technology

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell, a preparation method thereof and a cell assembly. A second semiconductor layer comprises an intrinsic silicon layer and a second doped silicon layer; the second doped silicon layer comprises second doped microcrystalline silicon and second doped amorphous silicon located at the overlapping region, and further comprises an amorphous silicon insulating layer, and the amorphous silicon insulating layer is located outside the second doped amorphous silicon and does not cover the second doped microcrystalline silicon; an isolation groove is formed in the part, located in the overlapping area, of the conductive film layer, and a distance is reserved between the isolation groove and the junction of the side face of the first semiconductor layer and the second semiconductor layer. Leakage current generated at the junction of the side face of the first semiconductor layer and the second semiconductor layer can be remarkably reduced, meanwhile, the passivation effect of the second semiconductor layer is guaranteed, the isolation groove does not need to stretch across the junction, the second semiconductor layer cannot be damaged, the parallel resistance of the battery is improved, and the current and efficiency of the battery are improved.

The embodiment of the invention provides a conductive film, a metal grid touch screen sensor, a touch module and a preparation method of the conductive film. The problem that in the prior art, a conductive film is prone to breakage after being bent for multiple times is solved. The conductive film includes a substrate layer, a first conductive layer, and a first outer blackening layer. The substrate layer is provided with a first surface and a second surface which are oppositely arranged along the thickness direction of the substrate layer; the first conductive layer comprises a plurality of first conductive sub-layers, the plurality of first conductive sub-layers are sequentially stacked on the first surface of the substrate layer, the thickness of each first conductive sub-layer is smaller than a first preset value, and the number of the first conductive sub-layers is larger than a second preset value; the first outer blackening layer is stacked on the first conductive sub-layer on the outermost layer. The touch module prepared from the conductive film provided by the embodiment of the invention has the advantages of good fracture resistance and high visual quality.

The invention, which belongs to the technical field of power transmission line deicing, discloses an ice and snow disaster-resistant power transmission line adaptive ice melting device comprising an annular body of which the inner diameter is adaptive to the outer diameter of a power transmission line and which is used for being fixed on the power transmission line in a surrounding manner; the distributed temperature sensor array is uniformly embedded in the inner surface of the annular body and is used for monitoring the surface temperature distribution of the power transmission line in real time; the heating element layer covers the periphery of the annular body, comprises at least two conductive film layers which are insulated from each other, and is used for generating Joule heat in gradient distribution; and the control module is arranged in the waterproof cavity at the side part of the annular body, is electrically connected with the temperature sensor array and the heating element layer, and is used for dynamically adjusting heating parameters according to the temperature data. When temperature values of more than three adjacent sensors are detected to be lower than a freezing point threshold value, a gradient heating program is started, the current density of each conductive film layer is dynamically adjusted according to an icing thickness calculation model, and melting and falling of an ice layer are realized.

The invention belongs to the technical field of back contact cell preparation, and particularly relates to a back contact cell of an opening semiconductor without etching and a preparation method thereof, and the method comprises the steps: S103, carrying out the polishing or texturing of the back surface of a silicon wafer obtained in S102; s104, depositing an intrinsic crystalline silicon layer on the back surface of the silicon wafer; s105, the non-target deposition area is masked through a hard mask plate, and N-type crystalline silicon layers which are alternately arranged are deposited on the back face; replacing the mask of the hard mask plate to form a P-type crystalline silicon layer and an overlapping region; s106, depositing a conductive film layer on the back surface of the silicon wafer; s107, an opening is formed in the conductive film layer to form an isolation groove, and the width W4 of the isolation groove is controlled to range from 0.03 mm to 0.15 mm; and S108, forming a metal electrode on the back surface. According to the invention, the back semiconductor does not need to be opened by etching, the technological process is greatly simplified, etching damage is avoided, and the cell conversion efficiency, the cell stability and the production yield are improved.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell capable of reducing the thickness difference between an N-type region and a P-type region and preparation and application of the back contact cell capable of reducing the thickness difference between the N-type region and the P-type region. Wherein the surface of one side, far away from the crystalline silicon substrate, of the amorphous silicon layer is provided with an N-type region and a P-type region which are alternately formed, the N-type region comprises an N-type doped base layer and an N-type transition layer, and the P-type region comprises a P-type doped base layer and a P-type transition layer; wherein the content ratio of phosphorus to silicon in the N-type doped base layer is smaller than 1, the content ratio of phosphorus to silicon in the N-type transition layer is larger than 1, the content ratio of boron to silicon in the P-type doped base layer is smaller than 1, and the content ratio of boron to silicon in the P-type transition layer is larger than 1. The vertical contact resistance can be obviously reduced while the thickness difference between the N-type region and the P-type region is reduced, the high cell conversion efficiency is obtained, the stability of the cell is improved, and the service life of the cell is prolonged; meanwhile, the risk of film explosion in the subsequent process is reduced, and the edge compounding problem is relieved.

The invention belongs to the field of membrane separation, and provides a conductive nanofiltration membrane, a roll type conductive membrane filter element and a nanofiltration separation method.The conductive nanofiltration membrane comprises a substrate layer, a conductive layer and a separation layer and is prepared through a two-step vacuum filtration process and a vacuum filtration assisted in-situ interfacial polymerization method; meanwhile, good conductivity and selective separation capability are realized. In addition, the invention also provides a roll-type conductive membrane filter element based on the conductive nanofiltration membrane, and the roll-type conductive membrane filter element comprises the conductive nanofiltration membrane, a central conduit with a plurality of side holes, a water production diversion separation net, a water inlet diversion separation net, a counter electrode conductive layer, a conductive connector lug and a metal sheet (used for power connection), the roll type conductive membrane filter element can dynamically regulate and enhance the separation performance of charged molecules, ions and the like under the action of an electric field, and has the characteristics of simple structure, easiness in operation and amplification and adjustable and controllable membrane performance.

The invention relates to the technical field of air pressure switches, in particular to an air pressure switch, a power distribution module, a battery pack and a thermal runaway alarm method of the battery pack. At least part of the diaphragm assembly is conductive, the diaphragm assembly divides an inner cavity of the shell into a first cavity and a second cavity which are separated from each other, and the shell is provided with a first vent hole communicating the first cavity with the outside of the shell; the number of the connecting terminals is at least one, and the connecting terminals are arranged in the second cavity; and the diaphragm assembly is configured to move along with the air pressure difference between the first chamber and the second chamber, so that the conductive part of the diaphragm assembly is in contact with or separated from the connecting terminal. According to the air pressure switch provided by the invention, the detection sensitivity of the air pressure switch is improved, and the accuracy of pressure detection alarm is further improved.

A wafer placement table includes a resin layer joining a ceramic plate and a conductive plate. The ceramic plate has an insulative gas passage plug. The resin layer has a resin layer through portion that is larger than the insulative gas passage plug in plan view. The conductive plate has a gas introduction path communicating with the insulative gas passage plug via the resin layer through portion. A conductive film is provided in the lower surface of the ceramic plate and is larger than the resin layer through portion in plan view. A conductive connecting portion is provided in the gas introduction path and is smaller than the resin layer through portion in plan view. The conductive connecting portion electrically connects the conductive film and the conductive plate to each other and allows the gas to flow from the gas introduction path to the insulative gas passage plug.

A paste that includes particles of a layered material in an ammonia aqueous solution. The particles include one or plural layers, the layers having a layer body represented by MmXn, wherein M is at least one metal of Group 3, 4, 5, 6, or 7, X is a carbon atom, a nitrogen atom, or a combination thereof, n is not less than 1 and not more than 4, and m is more than n but not more than 5, and a modifier or terminal T exists on a surface of the layer body, wherein T is at least one selected from the group consisting of a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, and a hydrogen atom, wherein the paste has a viscosity of 1 Pa·s or more at a shear velocity of 1 / s when the paste has a solid content concentration of 1.0% by mass.

The invention discloses low-reflection type electromagnetic shielding composite paper and a preparation method thereof, and belongs to the technical field of electromagnetic shielding. The invention provides low-reflection type electromagnetic shielding composite paper which is of a sandwich structure and is sequentially composed of an aerogel film layer, a conductive paper layer and a conductive thin film layer. Wherein the aerogel film layer is composed of a cellulose nanofiber base material, a cross-linking agent and a conductive filler; the conductive paper is obtained by impregnating plant fiber-based body paper with a dispersion liquid of a conductive filler; the conductive film is composed of nanocellulose fibers and a conductive filler. The electromagnetic shielding paper has a unique layered structure, and impedance matching of the electromagnetic shielding paper is improved through interlayer conductive gradient. The prepared low-reflection type electromagnetic shielding paper has excellent electromagnetic shielding performance and ultralow reflection efficiency at the same time.

The present application relates to the technical field of flexible sensor, and discloses a flexible large-strain sensor, a preparation method and application, aiming to solve the problems of small range, poor adhesion of traditional sensors in large-strain monitoring of solid engine grain and other soft materials, and poor signal linearity and repeatability, complex preparation process and high cost of existing flexible sensors. A polymer film is used to make a flexible insulating substrate; a conductive film is prepared on the flexible insulating substrate to form a composite film layer structure; according to a preset pattern of the conductive film, laser etching and scribing are performed on the conductive film according to a first type of vector track, only penetrating the conductive film, to divide out strain resistance and other resistance, forming an off-axis serpentine structure; according to a preset pattern of the flexible insulating substrate, laser etching and scribing are performed on the composite film layer structure according to a second type of vector track, penetrating the composite film layer structure, to etch out the flexible insulating substrate of the sensor; lead-out wires are welded on the lead-out electrodes and encapsulated to obtain the flexible large-strain sensor.

In a semiconductor device including an oxide semiconductor film, a semiconductor device including a transistor with excellent electric characteristics is provided. The present invention is a semiconductor device including a glass substrate and a channel-etching transistor. The channel-etching transistor includes a gate electrode, a first insulating film, a second insulating film, an oxide semiconductor film, a source electrode, a drain electrode, a third insulating film, a pixel electrode, and a conductive film containing copper. The source electrode and the drain electrode each include a first conductive film, a second conductive film provided over and in contact with the first conductive film, and a third conductive film provided over and in contact with the second conductive film. The second conductive film contains a first element, the first conductive film and the third conductive film contain the same second element, and the oxide semiconductor film contains indium, gallium, and zinc.

The utility model discloses coating equipment and a conductive film. The coating equipment comprises an unwinding assembly, a first coating assembly, a second coating assembly and a winding assembly. The unwinding assembly is used for unwinding a base film layer, the first coating assemblies and the second coating assemblies are used for coating two surfaces of the base film layer respectively, and the at least one first coating assembly is at least used for coating a first metal layer on a first surface of the base film layer; the second coating assembly, away from the winding assembly, of the at least two second coating assemblies is at least used for plating a second metal layer on the second surface of the base film layer, and the second coating assembly, close to the winding assembly, of the at least two second coating assemblies is at least used for plating an anti-sticking layer on the second metal layer. The winding assembly is used for winding the base film layer plated with the first metal layer, the second metal layer and the anti-sticking layer. The conductive film provided by the utility model can solve the problem that the metal layers on the two opposite surfaces of the conductive film in the prior art are easy to bond with each other, so that the metal layers fall off from the base film layer.

The utility model discloses an alkaline battery steel shell high-speed coating production line which comprises a steel shell conveying and sequencing system, a steel shell coating machine, a conducting film spraying system, a drying device and a detecting device. The steel shell conveying and sequencing system, the steel shell coating machine, the drying device and the detection device are sequentially arranged from front to back, the conductive film spraying system is located on the side face of the steel shell conveying and sequencing system, production efficiency is improved, the defective product rate is reduced, manual dependence is reduced, meanwhile, stability and consistency of product quality are ensured, equipment layout is optimized, and the production cost is reduced. The occupied production space is reduced, the environmental adaptability of the production line is enhanced, the flexibility and the market response speed of the production line are improved, and the requirements of the modern battery manufacturing industry for high-efficiency and high-quality production are met.

A CMOS type image sensor includes a substrate that includes a first side and a second side that are opposite to each other, a pixel isolation pattern that defines a plurality of unit pixels that are two-dimensionally arranged inside the substrate, and a photoelectric conversion region inside each of the unit pixels. The pixel isolation pattern includes a first insulating film, a first material film, a second insulating film, a second material film, and a gap fill conductive film that are sequentially stacked on an inner wall of the substrate. One end of the first material film adjacent to the first side and one end of the second material film adjacent to the first side are each in contact with the gap fill conductive film, and the first material film and the second material film include a different material from the first insulating film and the second insulating film.

To provide an electronic device capable of suppressing influence of an electric field in a through hole due to an insulating layer.SOLUTION: An electronic device includes a substrate, an insulating layer, a conductive film section, and an extension section. The substrate is provided with a first through hole extending in a first direction. The insulating layer is stacked on the substrate and provided with a second through hole. The second through hole is aligned with the first through hole in the first direction, communicates with the first through hole, and being included in the first through hole when viewed along the first direction. The conductive film section is provided on an inner surface of the second through hole. The extension section extends continuously from the conductive film section into the first through hole, being separated from the substrate and the insulating layer, and being conductive.SELECTED DRAWING: Figure 1

The integrated conductive surface EMS beauty instrument comprises an electric control board, an EMS assembly and a conductive part, the EMS assembly and the conductive part are electrically connected with the electric control board, the conductive part comprises a crystal with a contact surface and a conductive film arranged on the contact surface of the crystal, and the conductive part is arranged at the contact end, making contact with a human body, of the beauty instrument. And the electric control board controls the conductive piece to generate EMS current to act on a human body. The conductive piece formed by combining the crystal and the conductive film is adopted to achieve an integrated conductive face, hardware or plastic electroplating electrode points do not need to be manufactured independently, the conductive piece serves as the contact end of the beauty instrument and the skin, the surface of the conductive piece is free of electrode point steps and gaps, the conductive piece can be well attached when making contact with the surface of the skin, and the hand scraping feeling is avoided; the body feeling of the surface is more comfortable; due to the adoption of the integrated contact end without the electrode point gap, no dirt is generated when gel is smeared on the surface of the contact end, the waterproof and anti-gel sealing effects are better, and the cleaning is more convenient.

A detection device includes a substrate, a plurality of photodiodes that are arranged in a detection region of the substrate, a plurality of first terminals that are arranged in a first direction in a peripheral region outside the detection region of the substrate, an insulating film that covers the first terminals, and an anisotropic conductive film that is located above the insulating film, and covers the first terminals.

An anode chamber for an electroplating apparatus includes an inert anode, an anode support in contact with the inert anode, an ionically conductive membrane separated from the inert anode by a gap in the anode chamber, a membrane clamp configured to hold the ionically conductive membrane, at least one inlet configured to flow anolyte into the gap at a first position, and at least one outlet configured to receive the anolyte flowing out of the gap at a second position.

The invention relates to the technical field of flexible sensors, discloses a flexible large-strain sensor, and a preparation method and application thereof, and aims to solve the problems that a traditional sensor is small in measuring range, poor in fitting performance and high in reliability in large-strain monitoring of soft materials such as solid engine grains. And the problems of poor signal linearity and repeatability, complex preparation process and high cost of the existing flexible sensor are solved. Manufacturing a flexible insulating substrate by adopting a polymer film; preparing a conductive film on the flexible insulating base to form a composite film layer structure; according to a preset pattern of the conductive film, laser etching scribing is carried out on the conductive film according to the first type of vector trajectory, only the conductive film is penetrated, a strain resistor and other resistors are segmented, and an off-axis snakelike structure is formed; according to a preset pattern of the flexible insulating substrate, laser etching scribing is carried out on the composite film layer structure according to a second type of vector trajectory, the composite film layer structure is penetrated, and the flexible insulating substrate of the sensor is etched; and welding a leading-out wire on the leading-out electrode and packaging to obtain the flexible large-strain sensor.

This invention discloses a nano-Fe3C particle composite carbon-based conductive film and its preparation method. This invention utilizes the Joule heat generated by energizing the carbon-based conductive film to subject the iron-containing raw material loaded thereon to high-temperature treatment, causing it to react with the carbon-based conductive film, thereby producing a carbon-based conductive composite film uniformly loaded with Fe3C nanoparticles. This invention replaces the traditional heating process in a tube furnace or box furnace with Joule heat generated by energizing a nano-carbon-based macrofilm with rapid temperature rise and fall characteristics. The entire process offers the advantages of simple steps, rapid synthesis, and low energy consumption.

A semiconductor package includes a semiconductor chip on a substrate. The semiconductor chip includes an active region, and a scribe lane in continuity with an edge of the active region. A non-conductive film (NCF) is between the substrate and the semiconductor chip, the non-conductive film (NCF) at least partially defines a recess region overlapping with the scribe lane in plan view and extending on the active region.

The present disclosure provides a system and a method to deliver (irradiate) energy and defrost the surface of a glazing that does not require printed conductors, embedded wires, bus bar or conductive film. The present disclosure uses the optical phenomenon known as Frustrated Total Internal Reflection (FTIR) to deliver light energy directly to a surface of at least one glass layer of a windshield, glazing or other transparent substrate by means of high intensity light. The light is injected into the surface of at least one glass layer of the glazing at an angle that allows for light propagation via Total Internal Reflection (TIR). The light energy can be used as the sole source of energy or be complementary to a conductive coated resistive heated circuit and / or hot air blowing system.

The utility model is applicable to the field of photovoltaic technology, and provides an HBC battery, a battery assembly and a photovoltaic system, the HBC battery comprises silicon: a silicon substrate, the silicon substrate is provided with a backlight surface and a light facing surface which are oppositely arranged, the backlight surface of the silicon substrate is alternately provided with a first area and a second area, the first area is a polished area, and the second area is a suede area; the first passivation layer, the first doping layer, the first conductive film layer and the first electrode are sequentially arranged in the first area in a stacked mode, the second passivation layer, the second doping layer, the second conductive film layer and the second electrode are sequentially arranged in the second area in a stacked mode, the first doping layer and the second doping layer are in a special shape, and the first conductive film layer and the second conductive film layer are not communicated; the width of the first electrode is smaller than that of the second electrode. The width of the second electrode is increased, so that the inner back reflection capability of front incident light can be improved, and the current output can be improved. And the influence of contact resistance is reduced, so that the transport efficiency of carriers is improved.

The invention relates to a high-stability low-voltage driven liquid crystal dimming film, which is provided with a first conductive film, a liquid crystal dimming layer and a second conductive film, and is characterized in that the liquid crystal dimming layer is positioned between the first conductive film and the second conductive film and contains liquid crystal, polymer or ionic liquid; the mass of the polymer is not less than 30% of the total mass of the polymer and the liquid crystal, and the weight percentage of the total mass of the ionic liquid and the liquid crystal dimming layer is less than 2%. And by adding the ionic liquid, the driving voltage is reduced. Through a small proportion of ionic liquid, the breakdown risk is obviously reduced, and the stability of the liquid crystal dimming film is improved.

A semiconductor device has a first substrate and a second substrate or interconnect substrate with an interconnect structure formed between the first substrate and second substrate or interconnect substrate using a VFM signal, in combination with heat and / or pressure. The interconnect structure can be a bump or a bump with conductive pillars. A microwave source disposed in proximity to the first and second substrates generates the VFM signal. Heat and pressure can be applied to the interconnect structure while using the VFM signal. Heat or pressure can be applied to the interconnect structure while using the VFM signal. A non-conductive film can be formed around the interconnect structure between the first substrate and second substrate. An epoxy and flux material can be formed around the interconnect structure between the first substrate and second substrate.

The invention relates to the technical field of carbon nanomaterials, and discloses a water-based high-dispersion carbon nanotube-graphene composite conductive liquid and a low-temperature curing process thereof, the process comprises pre-dispersion, fine dispersion, conductive liquid preparation, curing treatment, low-temperature curing and post-treatment, and by optimizing the composite dispersion process and a surface modification method, the conductive liquid is prepared. The agglomeration phenomenon of nano materials is inhibited, uniform and stable dispersion of the carbon nanotubes and graphene in a high-water-based medium is realized, and the storage stability and applicability of the conductive liquid are improved; by designing a multi-stage low-temperature cross-linking mechanism, the curing temperature is reduced, the process time is shortened, and damage of high temperature to a heat-sensitive base material is avoided; through the synergistic effect of the graphene and the carbon nanotubes and the application of an interface enhancement technology, a continuous and stable three-dimensional conductive path is formed in a low-temperature film forming process, and the conductivity, the mechanical strength and the environmental stability of the conductive film are improved.

The invention relates to the technical field of electronic paste, and provides conductive paste and a preparation method thereof. The conductive paste comprises the following components in parts by weight: 60-85 parts of copper powder, 0.1-5 parts of a photothermal conversion aid, 0.5-3 parts of a ligand dispersant, 0.1-2 parts of an antioxidant aid and 10.5-28 parts of an organic carrier. According to the conductive paste provided by the invention, the copper powder is used as a conductive phase, and a conductive network is constructed after sintering; the photothermal conversion auxiliary agent can efficiently absorb light energy and convert the light energy into heat energy, sintering conditions are reduced, and the slurry is compatible with a flexible substrate; the ligand dispersant improves the dispersibility of each component and assists in obtaining a uniform and stable conductive film layer; the antioxidant additive forms a protective layer on the surface of the copper powder, dynamic antioxidant protection is provided, and air sintering is achieved; the slurry is endowed with good rheological property by the organic carrier, and uniform film formation is facilitated. Therefore, under the synergism of all the components, high-efficiency sintering can be performed in a low-temperature and air environment, and a copper-based film layer with high compactness, high conductivity and high stability is obtained.

An active matrix substrate includes a plurality of gate bus lines, a plurality of source bus lines located closer to the substrate side; a lower insulating layer that covers the source bus lines; an interlayer insulating layer that covers the gate bus lines; a plurality of oxide semiconductor TFTs disposed in association with respective pixel regions; a pixel electrode disposed in each of the pixel regions; and a plurality of source contact portions each of which electrically connects one of the oxide semiconductor TFTs to the corresponding one of the source bus lines, in which each of the oxide semiconductor TFTs includes an oxide semiconductor layer disposed on the lower insulating layer, a gate electrode disposed on a portion of the oxide semiconductor layer, and a source electrode formed of a conductive film, and each of the source contact portions includes a source contact hole, and a connection electrode.

The present invention discloses a fast-charging sodium-ion battery negative electrode material and a preparation method thereof, comprising the following steps: adding graphene oxide and carbon nanotubes to a solvent in a mass ratio of 2:1, ultrasonically treating the mixture and depositing the mixture on a metal film, removing the solvent to obtain a composite material, mixing sodium chloride and cobalt chloride in a preset ratio, placing the mixture in a tubular furnace for high-temperature calcination to obtain sodium cobalt oxide; mixing the graphene oxide / carbon nanotube composite material with the sodium cobalt oxide, stirring the mixture uniformly in an appropriate amount of solvent, and then calcining the mixture to form a good composite structure material; mixing the composite material with an appropriate amount of conductive polymer solution, performing an impregnation treatment to form a conductive film on the surface, and removing the solvent to obtain a negative electrode blank; controlling the particle size, and further performing a heat treatment to obtain the negative electrode material; through material composition innovation, composite optimization, and structural regulation, the negative electrode material can exhibit good performance in high-load and fast-charging scenarios, meeting the requirements of high-power applications for fast-charging performance of sodium-ion batteries.