683 results about "Conductive membrane" patented technology

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell capable of reducing the thickness difference between an N-type region and a P-type region and preparation and application of the back contact cell capable of reducing the thickness difference between the N-type region and the P-type region. Wherein the surface of one side, far away from the crystalline silicon substrate, of the amorphous silicon layer is provided with an N-type region and a P-type region which are alternately formed, the N-type region comprises an N-type doped base layer and an N-type transition layer, and the P-type region comprises a P-type doped base layer and a P-type transition layer; wherein the content ratio of phosphorus to silicon in the N-type doped base layer is smaller than 1, the content ratio of phosphorus to silicon in the N-type transition layer is larger than 1, the content ratio of boron to silicon in the P-type doped base layer is smaller than 1, and the content ratio of boron to silicon in the P-type transition layer is larger than 1. The vertical contact resistance can be obviously reduced while the thickness difference between the N-type region and the P-type region is reduced, the high cell conversion efficiency is obtained, the stability of the cell is improved, and the service life of the cell is prolonged; meanwhile, the risk of film explosion in the subsequent process is reduced, and the edge compounding problem is relieved.

The invention belongs to the field of membrane separation, and provides a conductive nanofiltration membrane, a roll type conductive membrane filter element and a nanofiltration separation method.The conductive nanofiltration membrane comprises a substrate layer, a conductive layer and a separation layer and is prepared through a two-step vacuum filtration process and a vacuum filtration assisted in-situ interfacial polymerization method; meanwhile, good conductivity and selective separation capability are realized. In addition, the invention also provides a roll-type conductive membrane filter element based on the conductive nanofiltration membrane, and the roll-type conductive membrane filter element comprises the conductive nanofiltration membrane, a central conduit with a plurality of side holes, a water production diversion separation net, a water inlet diversion separation net, a counter electrode conductive layer, a conductive connector lug and a metal sheet (used for power connection), the roll type conductive membrane filter element can dynamically regulate and enhance the separation performance of charged molecules, ions and the like under the action of an electric field, and has the characteristics of simple structure, easiness in operation and amplification and adjustable and controllable membrane performance.

The present application relates to the technical field of flexible sensor, and discloses a flexible large-strain sensor, a preparation method and application, aiming to solve the problems of small range, poor adhesion of traditional sensors in large-strain monitoring of solid engine grain and other soft materials, and poor signal linearity and repeatability, complex preparation process and high cost of existing flexible sensors. A polymer film is used to make a flexible insulating substrate; a conductive film is prepared on the flexible insulating substrate to form a composite film layer structure; according to a preset pattern of the conductive film, laser etching and scribing are performed on the conductive film according to a first type of vector track, only penetrating the conductive film, to divide out strain resistance and other resistance, forming an off-axis serpentine structure; according to a preset pattern of the flexible insulating substrate, laser etching and scribing are performed on the composite film layer structure according to a second type of vector track, penetrating the composite film layer structure, to etch out the flexible insulating substrate of the sensor; lead-out wires are welded on the lead-out electrodes and encapsulated to obtain the flexible large-strain sensor.

In a semiconductor device including an oxide semiconductor film, a semiconductor device including a transistor with excellent electric characteristics is provided. The present invention is a semiconductor device including a glass substrate and a channel-etching transistor. The channel-etching transistor includes a gate electrode, a first insulating film, a second insulating film, an oxide semiconductor film, a source electrode, a drain electrode, a third insulating film, a pixel electrode, and a conductive film containing copper. The source electrode and the drain electrode each include a first conductive film, a second conductive film provided over and in contact with the first conductive film, and a third conductive film provided over and in contact with the second conductive film. The second conductive film contains a first element, the first conductive film and the third conductive film contain the same second element, and the oxide semiconductor film contains indium, gallium, and zinc.

The utility model discloses an alkaline battery steel shell high-speed coating production line which comprises a steel shell conveying and sequencing system, a steel shell coating machine, a conducting film spraying system, a drying device and a detecting device. The steel shell conveying and sequencing system, the steel shell coating machine, the drying device and the detection device are sequentially arranged from front to back, the conductive film spraying system is located on the side face of the steel shell conveying and sequencing system, production efficiency is improved, the defective product rate is reduced, manual dependence is reduced, meanwhile, stability and consistency of product quality are ensured, equipment layout is optimized, and the production cost is reduced. The occupied production space is reduced, the environmental adaptability of the production line is enhanced, the flexibility and the market response speed of the production line are improved, and the requirements of the modern battery manufacturing industry for high-efficiency and high-quality production are met.

A semiconductor device has a first substrate and a second substrate or interconnect substrate with an interconnect structure formed between the first substrate and second substrate or interconnect substrate using a VFM signal, in combination with heat and / or pressure. The interconnect structure can be a bump or a bump with conductive pillars. A microwave source disposed in proximity to the first and second substrates generates the VFM signal. Heat and pressure can be applied to the interconnect structure while using the VFM signal. Heat or pressure can be applied to the interconnect structure while using the VFM signal. A non-conductive film can be formed around the interconnect structure between the first substrate and second substrate. An epoxy and flux material can be formed around the interconnect structure between the first substrate and second substrate.

The invention relates to the technical field of carbon nanomaterials, and discloses a water-based high-dispersion carbon nanotube-graphene composite conductive liquid and a low-temperature curing process thereof, the process comprises pre-dispersion, fine dispersion, conductive liquid preparation, curing treatment, low-temperature curing and post-treatment, and by optimizing the composite dispersion process and a surface modification method, the conductive liquid is prepared. The agglomeration phenomenon of nano materials is inhibited, uniform and stable dispersion of the carbon nanotubes and graphene in a high-water-based medium is realized, and the storage stability and applicability of the conductive liquid are improved; by designing a multi-stage low-temperature cross-linking mechanism, the curing temperature is reduced, the process time is shortened, and damage of high temperature to a heat-sensitive base material is avoided; through the synergistic effect of the graphene and the carbon nanotubes and the application of an interface enhancement technology, a continuous and stable three-dimensional conductive path is formed in a low-temperature film forming process, and the conductivity, the mechanical strength and the environmental stability of the conductive film are improved.

The invention relates to the technical field of electronic paste, and provides conductive paste and a preparation method thereof. The conductive paste comprises the following components in parts by weight: 60-85 parts of copper powder, 0.1-5 parts of a photothermal conversion aid, 0.5-3 parts of a ligand dispersant, 0.1-2 parts of an antioxidant aid and 10.5-28 parts of an organic carrier. According to the conductive paste provided by the invention, the copper powder is used as a conductive phase, and a conductive network is constructed after sintering; the photothermal conversion auxiliary agent can efficiently absorb light energy and convert the light energy into heat energy, sintering conditions are reduced, and the slurry is compatible with a flexible substrate; the ligand dispersant improves the dispersibility of each component and assists in obtaining a uniform and stable conductive film layer; the antioxidant additive forms a protective layer on the surface of the copper powder, dynamic antioxidant protection is provided, and air sintering is achieved; the slurry is endowed with good rheological property by the organic carrier, and uniform film formation is facilitated. Therefore, under the synergism of all the components, high-efficiency sintering can be performed in a low-temperature and air environment, and a copper-based film layer with high compactness, high conductivity and high stability is obtained.

An active matrix substrate includes a plurality of gate bus lines, a plurality of source bus lines located closer to the substrate side; a lower insulating layer that covers the source bus lines; an interlayer insulating layer that covers the gate bus lines; a plurality of oxide semiconductor TFTs disposed in association with respective pixel regions; a pixel electrode disposed in each of the pixel regions; and a plurality of source contact portions each of which electrically connects one of the oxide semiconductor TFTs to the corresponding one of the source bus lines, in which each of the oxide semiconductor TFTs includes an oxide semiconductor layer disposed on the lower insulating layer, a gate electrode disposed on a portion of the oxide semiconductor layer, and a source electrode formed of a conductive film, and each of the source contact portions includes a source contact hole, and a connection electrode.

The application discloses an intelligent visual detection device and method based on keyboard conductive film processing, relates to the technical field of visual detection, and comprises a detection table, a top of the detection table is fixedly connected with an upper cover frame, and a first sliding electric track for conveying is arranged on the top of the detection table, and the device further comprises a moving table, the moving table is fixedly connected to a moving end of the first sliding electric track, two electric push rods are fixedly connected to one side of the moving table, fixed plates are fixedly connected to telescopic ends of the two electric push rods, a self-checking cloth is arranged between the connecting plate and a second winding roller, the self-checking cloth is unfolded, dust flying can be avoided, the self-checking cloth is unfolded to form a local closed space, and dust flying is further inhibited, and after the self-checking cloth is unfolded, a detection camera can be self-checked through the self-checking cloth, and in the whole process, pressing down, air blowing, cloth winding, and self-checking cloth unfolding are all coordinated and completed by the same driving chain.

The present invention provides a method for manufacturing a semiconductor device having good electrical properties. [Solution] A method for manufacturing a semiconductor device includes: forming a first oxide film and a second oxide film on an insulating film 224A by sputtering; forming a third oxide film on the second oxide film; forming a conductive film on the third oxide film; processing the first oxide film, the second oxide film, the third oxide film and the conductive film into island shapes using lithography to form oxide 230a, oxide 230b, oxide layer 243B and conductive layer 242B; depositing an insulating film 272A on the insulating film 224A, oxide 230a, oxide 230b, oxide layer 243B and conductive layer 242B; depositing an insulating film 273A on the insulating film 272A; and depositing an insulating film that will become an insulator 280 on the insulating film 273A.

An electronic device includes a substrate, a support body, and a conductive film. The substrate is a piezoelectric substrate or a compound semiconductor substrate including a first main surface with functional elements. The support body is provided at a second main surface of the substrate opposite to the first main surface and has a higher thermal conductivity than the substrate. The conductive film is located in a through hole extending through the support body and has a higher thermal conductivity than the support body.

The application relates to a composite ultrathin full-transparent intelligent intermediate connecting layer, which comprises, from top to bottom, a first composite electrode, a photonic management composite tunneling layer and a second composite electrode; the first composite electrode is a grid-shaped transparent conductive film formed by reducing graphene oxide and silver nanowires, wherein the diameter of the silver nanowires is 20-40 nm, the length is 15-40 mu m, and the mass ratio of the reducing graphene oxide to the silver nanowires is 1:3 to 1:6; the photonic management composite tunneling layer is a zinc oxide matrix embedded with perovskite quantum dots; and the second composite electrode is an intelligent response electrode formed by combining aluminum-doped zinc oxide and vanadium dioxide; through accurate regulation of the material and structure, the application realizes >88% light transmittance and <35 Omega / sq square resistance, and simultaneously has the functions of photonic down-conversion and intelligent thermal management, thereby significantly improving the performance and stability of a stacked battery.

The invention is suitable for the technical field of conductive films, and provides an anti-tilting high-reliability anisotropic conductive film and a preparation method thereof. The anisotropic conductive film is prepared from the following raw materials in parts by weight: 30 to 60 parts of polyurethane acrylic resin, 5 to 20 parts of non-acrylic functional polyurethane, 3 to 12 parts of XNBR, 2 to 12 parts of IBOA, 3 to 12 parts of M215, 1 to 6 parts of M340, 0.5 to 5 parts of phosphate, 0.2 to 3 parts of TiO2, 0.7 to 5 parts of organic peroxide initiator, 0.2 to 5 parts of modified nano silicon dioxide A and 2 to 28 parts of modified nano silicon dioxide B. According to the invention, modification treatment is carried out on two different kinds of nano silicon dioxide, so that the problems of tilting and bubbles in a COF terminal gap region in a crimping process are solved, synergistic improvement of low contact resistance and high tension is also realized, and the reliability, process tolerance and long-term use stability of the conductive film are remarkably enhanced.

To provide a coating liquid including particles, enabling the formation of a film with increased conductivity.SOLUTION: A coating liquid contains tin oxide particles, a dispersant, a binder, and an organic solvent, with the coating liquid having an average particle size of 150-400 nm. The dispersant used here is a titanate coupling agent or an anionic surfactant. A film formed using such a coating liquid has a low haze. The film also has high conductivity.SELECTED DRAWING: None

This invention relates to a display panel and its manufacturing method. The display panel includes a driving backplane and a plurality of light-emitting devices located on one side of the driving backplane. Each light-emitting device includes: a first electrode electrically connected to the driving backplane, with the first electrodes in each light-emitting device being independently disposed; an epitaxial structure, with the epitaxial structure in each light-emitting device being independently disposed on the side of the first electrode away from the driving backplane, and each epitaxial structure including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked along a direction away from the driving backplane; and a second common electrode electrically connected to the driving backplane, and the second common electrode including a transparent conductive film, which is in contact with the second semiconductor layer in each epitaxial structure. With the same number of pixels, the light-emitting devices with the above structure improve the transparency of the display panel; similarly, with the same transparency, more light-emitting devices with the above structure can be arranged, thereby increasing the PPI of the display panel.

A sample holder according to one embodiment comprises a ceramic body, a base member, a bonding material, and a first conductive film. The ceramic body has a first surface, which is a sample holding surface, and a second surface that is positioned on the reverse side of the first surface. In addition, the ceramic body has an internal electrode. The base member is conductive. The bonding material is positioned between the ceramic body and the base member. The first conductive film has a lower volume resistivity than the ceramic body, and is positioned so as to extend from at least a part of the outer surface of the ceramic body to at least a part of the outer surface of the base member.

This invention relates to the field of wastewater treatment technology, and more particularly to a method for anaerobic ammonia oxidation denitrification in a conductive membrane bioreactor for wastewater with low concentrations of nitrite. Anaerobic ammonia-oxidizing bacteria are inoculated into a conductive membrane bioreactor; the bioreactor is connected to a DC power supply, with a conductive membrane assembly as the cathode and a three-dimensional porous or fibrous conductive carbon material with a high specific surface area as the anode, and a positive bias is applied to the anode; nitrogen-containing wastewater with a nitrite to ammonia nitrogen molar ratio of 1:1.5 to 1:5 is introduced into the electro-enhanced membrane bioreactor, where the anaerobic ammonia-oxidizing bacteria use the conductive carbon material at the anode as an extracellular electron acceptor for biological denitrification. This invention, based on a conductive membrane bioreactor, achieves efficient denitrification even under nitrite-deficient conditions through a dual approach of "electroadsorption enrichment + electrostimulation enhancement." This method is simple to operate, energy-saving, and has broad application prospects.

An imaging device according to an embodiment of the present application includes a first substrate, a second substrate, a through wiring, and a conductive film. The first substrate includes a photoelectric conversion section and a first transistor provided in a first semiconductor substrate. The photoelectric conversion section and the first transistor are included in a sensor pixel. The second substrate is layered on the first substrate and includes a second transistor and an opening provided in a second semiconductor substrate. The second transistor is included in the sensor pixel. The opening penetrates the second semiconductor substrate in a layer direction. The through wiring penetrates the opening. The through wiring electrically connects the first substrate and the second substrate. The conductive film is provided at least between the second semiconductor substrate and the through wiring. The conductive film is connected to a fixed potential.

A method for fabricating a semiconductor device, comprising: forming an active pattern protruding from a first surface of a substrate and extending in a first direction; forming a field insulating film wrapping at least a part of a side wall of the active pattern on the first surface; forming a gate conductive film extending in a second direction on the active pattern and the field insulating film; forming a landing pad on the field insulating film; forming a source / drain region in the active pattern; forming a source / drain contact connecting the source / drain region and the landing pad, and disposed on the source / drain region and the landing pad; forming a through electrode penetrating the substrate and the field insulating film and connecting to the landing pad; and forming a power rail connecting to the through electrode and disposed on a second surface of the substrate opposite to the second surface.

This invention discloses a testing device for conductive film on a keyboard, belonging to the technical field of testing tools. It includes a base and a support mounted on the base. A test cover plate is placed on the base, and the test cover plate is moved vertically up and down by a lifting component mounted on the support. The test cover plate has test through holes corresponding to rubber buttons. A marker is provided within the test through hole, triggered by the rubber button, to determine whether the rubber button's installation is qualified. As the test cover plate moves up and down with the lifting component, the marker moves with the test through hole. The conductive film is placed below the test cover plate. The test cover plate falls, and the change in stroke triggered by the rubber button is observed. This allows for the determination of whether the rubber button's installation position on the conductive film, its physical elasticity, and hardness change after installation, thus determining whether the rubber button's installation on the conductive film is qualified. This device allows for the testing of a batch of rubber buttons in a single operation.

A nano-scale capacitive pressure sensor formed of an array of capacitive pressure cells is disclosed. The capacitive pressure sensor is integrated with an ASIC working as a pressure sensor and a PUF. Each of capacitive pressure cells is a hermetically sealed cavity and includes a first stationary conductive membrane and a second conductive membrane that deflects due to a force (pressure change) applied on the array of capacitive pressure sensor cells. A method of manufacturing the nano-scale capacitive pressure sensor is also disclosed.

The invention provides a silicon heterojunction cell, a preparation method and a photovoltaic module, and the method comprises the following steps: heating a pretreated substrate under a vacuum condition, and obtaining a heated substrate; sequentially growing an intrinsic amorphous silicon passivation layer, n-type doped hydrogenated microcrystalline silica, a transparent oxide conductive film and a metal electrode on the front surface of the heated substrate by adopting a chemical deposition method; sequentially growing an intrinsic amorphous silicon passivation layer, three p-type selective contact layers, a transparent oxide conductive film and a metal electrode on the back surface of the heated substrate by adopting a chemical deposition method; the three p-type selective contact layers comprise a p-type hydrogenated microcrystalline silicon layer, a CO2 lightly doped p-type hydrogenated microcrystalline silicon oxygen layer and a CO2 heavily doped p-type hydrogenated microcrystalline silicon oxygen layer; the three p-type selective contact layers constructed by the invention can provide excellent conductivity, transmittance and contact performance, and the filling factor of the cell is improved, so that the photoelectric conversion efficiency of the cell is improved.

This film formation method comprises: a first film formation step; a second film formation step; and a third film formation step. In the first film formation step, a dielectric film is formed on a first conductive film. In the second film formation step, a metal oxide film is formed on the dielectric film. In addition, in the second film formation step, a metal oxide film is formed using heated oxygen gas and a vapor of an organic metal compound. In the third film formation step, a second conductive film is formed on the metal oxide film.

The present application relates to the technical field of solar cells, in particular to a preparation of a laminated conductive film and its application in a crystalline silicon heterojunction solar cell, a transparent conductive film and a silicon film are prepared in sequence by magnetron sputtering technology to form a laminated conductive film, the preparation process is simple and efficient, and the conductive performance is significantly improved in the air environment and the heat treatment process. The laminated conductive film has good heat resistance in the air atmosphere, and after heat treatment at 100 DEG C-400 DEG C, the conductive performance is not only not attenuated but also improved, and the laminated film structure improves the stability of the transparent conductive film in acidic substances. The laminated conductive film is applied in a crystalline silicon heterojunction solar cell, the preparation process is simple, the production line has good compatibility, the service life of the heterojunction solar cell can be effectively prolonged, the reliability of the solar cell in long-term work is improved, the low packaging cost is maintained, and the application is suitable for large-scale production of high-efficiency and long-life heterojunction solar cells.

The invention discloses an amorphous ITO conductive film and a preparation method thereof, and the preparation method of the amorphous ITO conductive film comprises the following steps: taking a substrate, preparing a first resin layer on one surface of the substrate, and preparing a second resin layer on the other surface of the substrate; preparing a barrier connecting layer on the second resin layer; carrying out magnetron sputtering on the barrier connecting layer by using an ITO target material to prepare an amorphous ITO layer; in the magnetron sputtering process, first gas and second gas are introduced, the first gas comprises argon and hydrogen with the volume ratio being (97-99): (3-1), the second gas is oxygen, and the volume ratio of the first gas to the second gas is 100: (3-5); the vacuum degree is 3 * 10 <-4 > Pa to 1 * 10 <-4 > Pa. The argon-hydrogen mixed gas is used as the sputtering gas to prepare the amorphous ITO conductive film, the requirement for the vacuum degree of equipment is low, the process steps are simple, and the high-temperature-resistant amorphous ITO conductive film can be prepared.

An electrical connection assembly includes a connection module, a socket and a conductive film. The connection module includes a first housing and a number of first conductive elements. The first housing is provided with a first mounting wall. The socket includes a second housing and a number of second conductive elements. The second housing includes a receiving space and a second mounting wall. The conductive film includes a skeleton, an elastomer and a number of transfer conductive elements. The conductive film is received in the receiving space. The conductive film is sandwiched between the first mounting wall and the second mounting wall, and the elastomer is at least pressed by the connection module. The first conductive elements are electrically connected to the second conductive elements through the transfer conductive elements.

The utility model discloses an explosion-proof forklift electrostatic discharge device which comprises a substrate electrically connected with an explosion-proof forklift and further comprises a clamping assembly arranged on the upper portion of the substrate. The machine shell is installed on the upper portion of the base plate through a clamping assembly, and the machine shell is electrically connected with the base plate through the clamping assembly; the pay-off assembly is arranged in the machine shell; the grounding assembly is fixedly mounted at the tail end of the wire pipe of the pay-off assembly; the clamping assembly comprises a bottom plate fixed to the lower portion of the machine shell and a clamping piece fixed to the lower portion of an insertion rod fixed to the lower portion of the bottom plate in an inserted mode, and the lower portion of the clamping piece is fixed into the base plate in an inserted mode. Static electricity is guided into the grounding assembly through the line pipe in the machine shell, the rolling ball in the grounding assembly is in rolling contact with the ground to release the static electricity, the sponge ball in the rolling ball absorbs liquid in the water tank and then seeps, the ground is evenly wetted through the rolling ball through hole to form a conductive film, and the grounding area and the conductive stability are improved. Static electricity of the explosion-proof forklift can be continuously and effectively released.

The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.