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221results about How to "Reduce the likelihood of occurrence" patented technology

Pressure wave generator and process for manufacturing the same

Even when compression stress is generated because a volume of a thermal insulation layer 2 is expanded due to oxidized by oxygen in the air, occurrence of cracks and fractures of the thermal insulation layer and a heating conductor 3 caused by the cracks are prevented by dispersing the compression stress. A pressure wave generator comprises a substrate 1, the thermal insulation layer 2 of porous material which is formed on a surface of the substrate 1 in thickness direction, and the heating conductor 3 of thin film formed on the thermal insulation layer 2, and generates pressure waves by heat exchange between the heating conductor 3 and a medium. When a thickness at the center of the thermal insulation layer 2 in width direction W is used as a reference thickness, and it is assumed that distribution of thickness of thermal insulation layer in the width direction is averaged with the reference thickness, porosity in an outer peripheral portion of the thermal insulation layer is made smaller than porosity in the center portion. By making the porosity in the outer peripheral portion of the thermal insulation layer 2 smaller, a number of immovable points on the outer periphery of the thermal insulation layer 2 restricted by the substrate 1 is increased and the positions of them are dispersed, so that the compression stress compressed in the outer peripheral portion of the thermal insulation layer 2 can be dispersed.
Owner:MATSUSHITA ELECTRIC WORKS LTD

Semiconductor device and method for manufacturing the same

The present invention proposes a method of forming a dual contact hole, comprising steps of: forming a source/drain region and a replacement gate structure on a semiconductor substrate, the replacement gate structure including a replacement gate; depositing a first inter-layer dielectric layer; planarizing the first inter-layer dielectric layer to expose the replacement gate in the replacement gate structure; removing the replacement gate and depositing to form a metal gate; etching to form a first source/drain contact opening in the first inter-layer dielectric layer; sequentially depositing a liner and filling conductive metal in the first source/drain contact opening to form a first source/drain contact hole; depositing a second inter-layer dielectric layer on the first inter-layer dielectric layer; etching to form a second source/drain contact opening and a gate contact opening in the second inter-layer dielectric layer; and sequentially depositing a liner and filling conductive metal in the second source/drain contact opening and the gate contact opening to form a second source/drain contact hole and a gate contact hole. The present invention also proposes a semiconductor device manufactured by the above process.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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