1585 results about "Ion beam" patented technology

The invention discloses a parameter adjustment method of an ion implantation machine. The method comprises the following steps: acquiring a plurality of first parameters of an ion beam; acquiring historical data and screening at least one group of historical data close to the plurality of first parameters, wherein each group of historical data at least comprises a plurality of first parameters; inputting the plurality of first parameters and the historical data into a hybrid deep neural network model, and obtaining a predicted output variable; and adjusting a third parameter of the ion implantation machine according to the predicted output variable. According to the parameter adjustment method of the ion implantation machine provided by the invention, the third parameter of the machine is adjusted by adopting the hybrid deep neural network model, so that automatic ion beam parameter adjustment can be realized, the manual participation rate is reduced, and meanwhile, the working efficiency and the working accuracy of the machine which works for a long time can be improved.

The invention belongs to the technical field of wafer processing, and discloses a multi-section high-flatness wafer cutting method which comprises the following steps: S1, wafer pretreatment and stress buffer layer preparation; s2, performing layered rough cutting by using a diamond blade; s3, plasma fine cutting and interface repairing; s4, performing multi-layer cooling and surface polishing; and S5, surface quality closed-loop detection is carried out. According to the method, copper layer residues and resin carbonization defects are synchronously eliminated. Cryogenic treatment induces lattice reconstruction through ultrafast phase change and blocks a chain reaction of dislocation defects, so that the intrinsic mechanical strength of the material is recovered, and a chemical mechanical polishing system activates the self-repairing characteristic of the material while removing a sub-surface damaged layer through the synergistic effect of abrasive chemical activity and mechanical shearing force, so that an atomic-scale smooth interface is formed, and the self-repairing performance of the material is improved. A closed-loop detection system depends on multi-dimensional data fusion and ion beam fixed-point repair, accurate positioning and performance recovery of cross-scale defects are achieved, and the electrical integrity of a chip functional area is ensured.

The invention belongs to the technical field of precision measurement, and discloses a heating, excitation and frequency cracking measurement method for a quartz hemispherical harmonic oscillator, which adopts an infrared light source to uniformly heat the quartz hemispherical harmonic oscillator, and performs excitation through a piezoelectric excitation sheet based on a'four-antinode 'vibration mode of the quartz hemispherical harmonic oscillator. The method comprises the following steps: reading a vibration signal through a laser vibration meter, analyzing the direction of a frequency splitting decomposition and stiffness non-uniform axis of the quartz hemispherical harmonic oscillator, performing etching de-weighting through an ion beam, and trimming the stiffness non-uniformity of the quartz hemispherical harmonic oscillator. According to the method, the problem that the circumferential rigidity of the quartz hemispherical resonator is not uniform is solved, and compared with the conventional harmonic oscillator frequency cracking trimming method, the harmonic oscillator frequency cracking is leveled from the rigidity trimming angle, so that the temperature change interference resistance characteristic of the frequency cracking after trimming of the quartz hemispherical resonator gyroscope is improved.

The invention provides an ion beam polishing multi-working-condition removal function obtaining method which comprises the steps that according to a to-be-machined optical surface shape and a planned movement track of an ion source relative surface shape, the change range of an ion beam incident angle and the change range of a machining distance in a polishing machining task are determined; carrying out limited times of single-point etching experiments, and detecting the surface shape of the workpiece after the single-point etching experiments; calculating a processing amount distribution, and calculating a removal function considering the incident angle of the ion beam and the processing distance based on the processing amount distribution data and the processing time; training an artificial neural network by taking the removal function as training data; and on the basis of the trained neural network, obtaining a removal function fitting parameter pair according to the actual processing task requirement, and performing inverse processing on the removal function fitting parameter pair to obtain a removal function of the actual processing point. According to the removal function obtained through the method, the influence under multiple working conditions is considered, and the current high-precision machining requirement for the high surface slope or various non-planar optical surface shapes can be better met.

The invention provides an ion beam energy adaptive regulation and control method and system for FIB equipment, and the method comprises the steps: obtaining an energy distribution parameter of an ion beam in a focusing region, and determining a target energy adjustment range according to the energy distribution parameter and a preset ion beam energy reference model, generating a multi-stage energy adjustment instruction based on the target energy adjustment range, controlling an output parameter of an ion beam energy adjuster through the multi-stage energy adjustment instruction, enabling the current energy distribution of the ion beam to enter the target energy adjustment range, and detecting the energy fluctuation data of the adjusted ion beam on the surface of the sample in real time, and according to the energy fluctuation data and a preset adaptive compensation algorithm, adjusting feedback control parameters of the ion beam energy regulator, so that the energy distribution of the ion beam is maintained within the target energy regulation range. By means of the method, better machining surface quality and process consistency of industrial machining can be achieved.

Techniques for ribbon beam tuning segment tuning using machine learning are described. A method comprises receiving a set of control parameters representing configurations of multiple tuning segments of a tuning assembly for an ion implanter, predicting a set of process parameters representing one or more metrics associated with a beam property for an ion beam generated by the ion implanter based on the configurations of the multiple tuning segments using a control model, the control model comprising a forward model using a tuning matrix generated from a set of observations and a covariance matrix, and configuring a set of configurations for the multiple tuning segments based on the set of process parameters, the set of configurations for the multiple tuning segments to cause the ion beam to match a target metric for the ion beam. Other embodiments are described and claimed.

An ion implantation system includes an ion source, a beamline that extracts and shapes an ion beam from the ion source, a deceleration stage that reduces the energy of the ion beam while focusing the ion beam in the direction of a workpiece. A workpiece support has a structure that determines an implant plane position, which is the position of a workpiece surface that receives the ion beam. The workpiece support is configured to translate the implant plane along a path of the ion beam so as to shorten or lengthen the path without changing the tilt angle of the workpiece. The beam optics may be fixed and the focal point of the ion beam may be allowed to vary with a decel ratio. The workpiece support may translate the implant plane to a focal point of the ion beam or to some fixed offset from that focal point.

The invention relates to the technical field of ion beam tubes, in particular to a titanium alloy lining dipolar iron pipeline treatment method which comprises the steps that a getter film is deposited on the inner wall of a dipolar iron pipeline; the dipolar iron pipeline is installed in an extremely high vacuum system to be subjected to vacuum baking activation; the dipolar iron pipeline is cooled through a low-temperature medium, so that the temperature of the getter film reaches a first set temperature; and continuously introducing a low-temperature medium into the cooling pipeline, and meanwhile, keeping an ion pump of the extremely high vacuum system in a working state until the target ultimate vacuum degree is obtained. According to the scheme, the defects that in the prior art, the vacuum degree of a titanium alloy lining dipolar iron pipeline is reduced in a high-temperature environment and the adsorption capacity of a getter film is reduced are overcome, and the purposes of improving the vacuum degree of the pipeline and enhancing the beam stability are achieved.

The invention relates to the technical field of semiconductor manufacturing, in particular to a sample with a pore structure, and provides a thinning method for preparing a pore sample by using a focused ion beam. According to the method, the front face of a target sample is thinned through FIB, then the back face of the target sample is thinned, the problem that in the prior art, a TEM target sheet generated when the front face and the back face of the target sample are thinned alternately is not of a pore internal structure is solved, and the technical effects of the method are that the efficiency of preparing the pore sample can be improved; and the picture shooting quality of the pore structure sample is improved.

The invention relates to the technical field of deposition of wear-resistant and corrosion-resistant coating materials on metal surfaces, in particular to a high-toughness CrNbZrNiSiBN high-entropy nitride coating and a preparation method thereof. A bonding layer formed by a Cr layer, a transition layer formed by a CrN layer and a functional layer coated with CrNbZrNiSiBN high-entropy nitride are sequentially arranged on the surface of a base material. And the total thickness of the coated functional layer is 2-10 microns. The method is completed by adopting an ion beam assisted arc ion plating technology, and the prepared composite coating has the advantages of relatively high hardness, relatively good toughness, wear resistance, corrosion resistance, high-temperature oxidation resistance and the like. The coating can be used for strengthening and protecting the surfaces of cutters, molds, aerospace, marine ship parts and the like.

A gauge that is configured to detect a time at which radiation enters the gauge. The gauge may include a member that is configured to transition from a first state to a second state upon receipt of the incoming radiation, and may include a light probe that is configured to detect when the member transitions to the second state. The gauge may provide for determining a time of arrival of the radiation at another gauge. For example, the gauge may correlate the time of arrival at the gauge with the another gauge, thereby providing for correlating a response time of a test specimen with actual exposure time of the test specimen to radiation (e.g., an ion beam).

The utility model provides an ion implantation device and a semiconductor structure. Wherein a first adjusting baffle plate and a second adjusting baffle plate are arranged in the ion implantation device, and a through hole is formed under the combination of the first adjusting baffle plate and the second adjusting baffle plate. The size of the through hole can be adjusted in the process of relative movement of the first adjusting baffle and the second adjusting baffle, so that the radial size of the ion beam passing through the through hole can be accurately controlled, a narrow scanning zone can be formed, an injection scanning area can be accurately defined, and the scanning efficiency is improved. Transition regions among different injection scanning regions are prevented from being formed, accurate injection compensation of each region is ensured, and the performance of the semiconductor structure is improved.

Segmented endpointing techniques for sample preparation are disclosed. A charged particle microscope system can be configured to remove a first layer of material from the sample by directing an ion beam toward a surface of the sample in a pattern. The pattern corresponding to a segment of the sample. After the first layer is removed, the system can remove a second layer of material from the segment such that a thickness of at least a portion of the segment is reduced. Removing the second layer can include directing the ion beam toward the portion of the sample in N patterns corresponding to N segments of the portion, obtaining an image of the surface of the sample, and stopping, based on the image, the directing of the ion beam toward a segment of the N segments.

Techniques for deterministic treatment planning for ion beam therapy are disclosed. In an example method, a computing device receives information about a target volume and surrounding anatomy within a patient, each characterized by a depth and set of dimensions. The computing device defines a spatial grid including a first number of steps. The computing device computes, for each step of the spatial grid, a fluence spectrum and a radial distribution based on iterative solutions to the Lagrangian form of the Boltzmann transport equation. The computing device computes corrections to the fluence spectra based on nuclear interactions. The computing device then determines an absorbed dose distribution to the target volume and the surrounding anatomy and generates an ion beam therapy treatment plan based on the absorbed dose distribution.

The invention discloses a gas mass spectrometer ion source performance testing device, and belongs to the technical field of mass spectrometer testing, the ion source performance testing device comprises an ion source testing assembly, the ion source testing assembly is used for fixing and testing a to-be-tested ion source and converting ions into ion beams, and the ion source testing assembly is connected with an adjustable flight tube assembly. The adjustable flight tube assembly provides a flight channel for the ion beam, the adjustable flight tube assembly can stretch and retract relative to the ion source test assembly to adjust the flight distance of the ion beam, one end, far away from the ion source test assembly, of the adjustable flight tube assembly is connected with an adjustable observation assembly, and the adjustable observation assembly can slide relative to the ion source test assembly. Therefore, the observation position and the ion beam flight distance are adjusted. According to the invention, the installed to-be-detected ion source can be rapidly detected in a high-vacuum environment, the detection time is shortened from two days to half an hour aiming at complex operation of an existing ion source on an instrument, and the installation and detection efficiency of the ion source is greatly improved.

The invention provides a laser crystal heterogeneous bonding method and an optical element, and relates to the technical field of laser, and the method comprises the steps: carrying out the ultra-precise surface treatment of the to-be-bonded surfaces of a laser crystal and a heterogeneous material based on the laser crystal and the heterogeneous material; respectively depositing at least one transition layer on the two to-be-bonded surfaces after surface treatment through a physical or chemical deposition method; the outermost layers of the two transition layers are made of the same material; carrying out ion beam activation treatment on the two surfaces to be bonded on which the transition layers are deposited so as to form high-activity surfaces; and aligning the two activated surfaces to be bonded in a vacuum environment at room temperature and applying pressure, and realizing room-temperature bonding through electrostatic force and chemical bond action to obtain a bonding body of the laser crystal and the heterogeneous material. According to the invention, thermal-mechanical property and chemical property differences among heterogeneous materials are overcome, and high-strength, low-stress and high-optical-quality bonding is realized.

The invention relates to a continuous ion beam screening and enriching system and method and a mass spectrograph, and the continuous ion beam screening and enriching system comprises a vacuum differential unit, a first ion focusing unit, a mass screening unit, a second ion focusing unit, an enriching and releasing unit and a third ion focusing unit which are sequentially arranged from upstream to downstream. The enrichment and release unit is provided with a shell and a plurality of annular electrode plates which are arranged in parallel and located in a cavity of the shell, a resistor and a capacitor are connected between every two adjacent annular electrode plates to form a gradient electric field, and center holes of the annular electrode plates are concentrically arranged to jointly form an ion channel penetrating between an inlet and an outlet of the enrichment and release unit. According to the invention, continuous ion beam low-energy-consumption enrichment and pulse release can be realized, and strict requirements of scientific and industrial fields on mass spectrum detection and ion control precision are met.

A method to operate an ion implanter. The method may include conducting an ion beam into an acceleration stage of a linear accelerator in the ion implanter, where the ion beam is a bunched ion beam. The method may also include applying an RF signal to the acceleration stage while the ion beam passes through the acceleration stage, the RF signal comprising a determined frequency and a determined amplitude, and performing a phase scan using the RF signal. The phase scan may include varying a phase of the RF signal at the acceleration stage over a plurality of phase values; and recording a plurality of arrival times at a monitor, situated downstream of the acceleration stage, the plurality of arrival times corresponding to the plurality of phase values, respectively.

The invention provides an argon gas cluster ion polishing machine and a diamond crystal workpiece polishing method. The polishing machine comprises a pulse control valve used for generating pulse type airflow beams, and a nozzle device, a beam splitter, an ionizer, an absorption electrode, an accelerator and a permanent magnet which are sequentially arranged in the spraying direction of the pulse type airflow beams. The nozzle device is used for spraying pulse type airflow beams; wherein the pulse type airflow beam comprises divergent argon atom airflow and neutral cluster particle flow concentrated on a central shaft; the beam splitter is used for screening and separating neutral cluster particles and argon atoms in the pulse type airflow beam; the ionizer is used for ionizing the neutral cluster particles into cluster ions; the suction electrode is used for guiding the ionized ionomer clusters to form an initially converged conical airflow beam; the accelerator is used for focusing and accelerating the conical airflow beam; the permanent magnet is used for separating ions with different masses to form a pure cluster ion beam; and high-quality polishing of the surface of the diamond crystal workpiece can be achieved.

The invention relates to the technical field of cutting equipment, and provides heat exchanger tube nest numerical control cutting equipment and a high-precision cutting method.The heat exchanger tube nest numerical control cutting equipment comprises a base, a first supporting plate, a second supporting plate and a third supporting plate are arranged on the base in the length direction of the base, and the first supporting plate is slidably connected to the base; the second supporting plate and the third supporting plate are both fixed to the base. According to the vertical cutting device, a second rotating disc is accurately controlled to rotate through a third driving mechanism, the second rotating disc rotates to drive a stop lever to move in a limiting groove, a support is pushed to rotate with a third hinged shaft as the center, and the spraying direction of a plasma spraying gun is tangent to the tube wall of the tube nest; when plasma is cut, a reflecting surface is formed on the inner wall of the other side, so that plasma hedging is caused, the plasma beam is jetted in the tangential direction through tangent angle cutting, the hedging phenomenon is avoided, the cutting gap is controlled, and the cutting precision is improved compared with a traditional mode.

The invention discloses a transmission electron microscope sample preparation method for a lunar soil space weathered surface and application, and the method comprises the following steps: pasting target lunar soil particles on a carbon conductive adhesive tape, and enabling the target flat surfaces of the target lunar soil particles to be placed back to the carbon conductive adhesive tape; plating a layer of carbon film on the surface of the target lunar soil particle to obtain a scanning electron microscope sample of the target lunar soil particle; screening out a plurality of target research areas on the carbon film corresponding to the target flat surface; uniformly plating a layer of gold film on the carbon film corresponding to the target lunar soil particle scanning electron microscope sample; deposition operation of a research area protection layer is carried out on the gold film corresponding to the target research area through an electron beam and an ion beam in sequence; and performing slicing operation perpendicular to the target flat surface on the target lunar soil particle scanning electron microscope sample to obtain the target lunar soil particle transmission electron microscope sample. According to the method, lunar soil space weathering characteristics can be truly reserved, and an accurate and reliable sample is provided for lunar soil space weathering research.

An ion angle detector includes a front plate that includes an aperture configured to form an ion beam from incident ions. An ion collector of the detector is configured to measure ion flux from the ion beam. A linear actuator is mechanically coupled to the ion collector and configured to move the ion collector in a direction parallel to the ion beam. Ion angular distribution of a plasma may be measured using the detector by moving the ion collector parallel to the ion beam, measuring ion flux while moving the ion collector to obtain the flux as a function of distance from the source location, and obtaining the angular distribution from the flux and the distance. The ion angle detector may be disposed in a chamber of a plasma system that has a controller operatively coupled to the detector and configured to measure ion angular distribution.

The frequency crack trimming device comprises a quartz cone cylinder, a clamping mechanism, a grating net and a diaphragm sheet, the clamping mechanism is arranged on one side of the small-diameter end of the quartz cone cylinder and used for installing the hemispherical harmonic oscillator to be trimmed, the two ends of the quartz cone cylinder are open, the grating net is fixed to the large-diameter end of the quartz cone cylinder, and the diaphragm sheet is arranged on the grating net. The quartz cone cylinder is used for dispersing ion beams entering the quartz cone cylinder, so that ions bombard the inner wall of the quartz cone cylinder until quartz particles are stripped, the diaphragm sheet is detachably installed at the small-diameter end of the quartz cone cylinder, a diaphragm hole is formed in the diaphragm sheet, and the stripped quartz particles can pass through the diaphragm sheet to be deposited at the position, right opposite to the diaphragm hole, of the hemispherical harmonic oscillator. According to the utility model, the frequency crack trimming of the hemispherical harmonic oscillator is realized in a mass adding manner, and the device has the advantages of simple and convenient operation and capability of rapidly realizing the quality trimming of the hemispherical harmonic oscillator.

The invention provides a rock mass internal pore intelligent characterization and three-dimensional reconstruction method and system, and relates to the technical field of rock mass internal structure analysis, and the method comprises the steps: obtaining a two-dimensional image sequence of a rock core in a target rock mass through a focused ion beam scanning electron microscope slicing-imaging sequence working mode; performing pore segmentation on each two-dimensional image in the two-dimensional image sequence by using the pore segmentation network to obtain a plurality of pore two-dimensional segmentation maps; on the basis of the pore two-dimensional segmentation map, constructing three-dimensional binary volume data of the pores according to a slice sequence; according to the three-dimensional binary volume data, performing three-dimensional reconstruction and structural characterization on rock core pores; according to the method, an imaging-recognition-reconstruction-evaluation integrated workflow is constructed, and a full-chain closed loop from nanoscale real three-dimensional data acquisition to intelligent recognition, three-dimensional reconstruction and quantitative analysis is realized.

The invention relates to the technical field of space exploration and lunar soil experiments, in particular to a melting centrifugal type mineral particle morphology remodeling device and a lunar soil glass ball preparation method. The device comprises a mineral protolith high-temperature melting system, a mineral melting slurry conveying system, a centrifugal mineral particle size control system and a mineral particle cooling and morphology remodeling system. The preparation method of the lunar soil glass ball comprises the following steps: adding basalt mineral powder and mineral melting additive powder into a melting centrifugal mineral particle morphology remodeling device to obtain simulated lunar soil glass balls with different particle sizes, and performing morphology transformation on the simulated lunar soil glass balls with different particle sizes by using an ion beam gun. And the lunar soil glass ball state of the impact melting history is reduced. According to the method, high-precision engineering mass production of components, morphology and mechanical properties of the lunar soil glass balls is realized through a fusion centrifugal forming and ion beam surface control composite process, and the problem of soil mechanical behavior deviation caused by morphology distortion of existing simulated lunar soil is solved.

The invention discloses an ion implantation process of an image sensor. The ion implantation process comprises the following steps: providing an ion implantation machine; the ion implantation machine continuously runs the nth ion implantation process for the first time, and n is a positive integer; based on the nth ion implantation process of the first time, the ion implantation machine automatically cuts a source, and continuously operates the (n + 1) th ion implantation process of the second time; the nth ion implantation process and the (n + 1) th ion implantation process are independently selected from any one of a P-type ion implantation process, an N-type ion implantation process and a D-type ion implantation process; the nth ion implantation process is different from the (n + 1) th ion implantation process; an ion beam in the P-type ion implantation process comprises boron difluoride and / or boron, an ion beam in the N-type ion implantation process comprises arsenic and / or phosphorus, and an ion beam in the D-type ion implantation process comprises indium. Through the process, the production efficiency of the image sensor and the low-brightness white dot performance are improved.

The invention provides a plasma beam heating-based cold crucible suspension smelting device and smelting method. The plasma beam heating-based cold crucible suspension smelting device comprises a plasma beam emitter and a cold crucible main body, the cold crucible main body is of a split type water cooling structure, a cold crucible water path is arranged in the cold crucible main body, a cooling water jacket is arranged on the outer side of the bottom of the cold crucible main body, the cold crucible water path is communicated with the cooling water jacket, a detachable crucible plug is further arranged at the bottom of the cold crucible main body, and the shape of the crucible plug is matched with that of an opening in the bottom of the cold crucible main body; an induction coil is arranged around the outer side of the cold crucible main body; a first electric shaft driving device is mounted on the plasma beam emitter, and a second electric shaft driving device is mounted on the cold crucible main body. The plasma beam emitter emits plasma beams to directly heat metal materials in the cold crucible, the superheat degree of a molten pool of the cold crucible can be effectively increased, metal materials with higher melting points can be molten after the superheat degree is increased, crystal structures in the metal can be refined, the mechanical properties of the alloy can be improved, and the purity of the alloy can be improved.

The invention discloses a hemispherical resonator three-dimensional quality finishing system and method, and the method comprises the steps: measuring the spherical thickness error data of a hemispherical resonator, decomposing the spherical thickness error data into a harmonic thickness error, selecting an ion beam diameter, and obtaining a corresponding removal function; carrying out edge continuation equivalent to the diameter of the removal function on the harmonic thickness error data to obtain a thickness error matrix, expanding the dimension of the removal function to be the same as the dimension of the thickness error matrix to obtain a material removal matrix, and correcting the thickness error matrix according to an incident angle of the removal function; residence time is solved according to the corrected thickness error matrix and the material removal matrix, then path planning is carried out according to the residence time, a machining G code is generated, and finally the machining G code is used for machining the hemispherical harmonic oscillator. The invention provides an efficient trimming method for harmonic oscillator spherical surface annular domain thickness errors, and solves the problems that coupling vibration is difficult to decouple and three-dimensional mass error distribution cannot be identified during quality trimming according to performance test feedback in a traditional method.

The invention relates to the technical field of vacuum equipment, and discloses an ion lens assembly, an ion source, a mass spectrometer and a mass spectrometry system. The ion lens assembly includes a deflection lens assembly and a return lens assembly. The deflection lens assembly is used for focusing an ion beam in the incident particle beam and enabling the ion beam to deflect towards a first direction. And the axis-returning lens assembly is used for receiving the ion beam from the deflection lens assembly, and the axis-returning lens assembly is used for focusing the received ion beam and enabling the ion beam to deflect towards a second direction.

An ion implantation system including an ion source for generating an ion beam, an end station for holding a substrate to be implanted by the ion beam, and a linear accelerator disposed between the ion source and the end station and adapted to accelerate the ion beam, the linear accelerator including a beam tube for transmitting the ion beam, the beam tube having at least five adjoining sidewalls, at least one resonator coupled to the beam tube, and at least one turbomolecular pump coupled to the beam tube, wherein at least one of the at least five adjoining sidewalls of the beam tube has an opening formed therein for providing access to an interior of the beam tube.