5278 results about "Ion beam" patented technology

An atomic layer etching apparatus using reactive radicals and neutral beams and an etching method using the same are provided. The atomic layer etching apparatus includes a reaction chamber including a stage on which a substrate to be etched is seated, a plasma generator including a plasma chamber configured to supply reactive radicals and neutral beams into the reaction chamber and receive a source gas to generate plasma, an inductive coil configured to surround the exterior of the plasma chamber to generate an electric field, a grid assembly disposed at a lower part of the plasma chamber and including first, second and third grids for extracting ion beams, and a reflective body disposed under the grid assembly and configured to supply electrons to the ion beams to convert the ion beams into neutral beams, a shutter installed between the plasma generator and the reactive chamber and configured to adjust supply of the neutral beams into the reaction chamber, a purge gas supply part configured to supply a purge gas into the reaction chamber, and a controller configured to control supply of the source gas, an etching gas and the purge gas, and opening/closing of the shutter.

The present invention relates to a cross-linker for photoresist compositions which is suitable for a photolithography process using KrF (248 mn), ArF (193 mn), E-beam, ion beam or EUV light sources. Preferred cross-linkers, according to the present invention, comprise a copolymer of (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride. ##STR1## wherein, R.sub.1 and R.sub.2 individually represent straight or branched C.sub.1-10 alkyl, straight or branched C.sub.1-10 ester, straight or branched C.sub.1-10 ketone, straight or branched C.sub.1-10 carboxylic acid, straight or branched C.sub.1-10 acetal, straight or branched C.sub.1-10 alkyl including at least one hydroxyl group, straight or branched C.sub.1-10 ester including at least one hydroxyl group, straight or branched C.sub.1-10 ketone including at least one hydroxyl group, straight or branched C.sub.1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C.sub.1-10 acetal including at least one hydroxyl group; and R.sub.3 represents hydrogen or methyl.

An etching apparatus using a neutral beam includes an electron emission unit to convert an ion beam, extracted from plasma by a plurality of grids, into a neutral beam by colliding the ion beam with electrons to prevent the ion beam from physically colliding with the electron emission unit, thus preventing the damage to a neutralization unit and generation of foreign substances with a simple structure. Further, the etching apparatus converts the ion beam into the neutral beam at a high neutralizing efficiency without causing directionality and energy losses, and generates a neutral beam having a large area, thus uniformly etching a semiconductor wafer.

The invention comprises an X-ray system that is orientated to provide X-ray images of a patient in the same orientation as viewed by a proton therapy beam, is synchronized with patient respiration, is operable on a patient positioned for proton therapy, and does not interfere with a proton beam treatment path. Preferably, the synchronized system is used in conjunction with a negative ion beam source, synchrotron, and/or targeting method apparatus to provide an X-ray timed with patient respiration and performed immediately prior to and/or concurrently with particle beam therapy irradiation to ensure targeted and controlled delivery of energy relative to a patient position resulting in efficient, precise, and/or accurate noninvasive, in-vivo treatment of a solid cancerous tumor with minimization of damage to surrounding healthy tissue in a patient using the proton beam position verification system.

A read sensor for a read transducer is fabricated. The read transducer has field and device regions. A read sensor stack is deposited. A mask covering part of the stack corresponding to the read sensor is provided. The read sensor having inboard and outboard junction angles is defined from the stack in a track width direction. A critical junction (CJ) focused ion beam scan (FIBS) polishing that removes part of the read sensor based on the junction angles is performed. A hard bias structure is deposited and the transducer planarized. A remaining portion of the mask is removed. A stripe height mask covering part of the read sensor and hard bias structure in a stripe height direction is provided. The read sensor stripe height is defined. A tunneling magnetoresistance (TMR) FIBS polishing that removes part of the stack in the field region is performed. An insulating layer is provided.

A system and method for the production of radioisotopes by the transmutation of target isotopic material bombarded by a continuous wave particle beam. An ion source generates a continuous wave ion beam, irradiating an isotope target, which is cooled by transferring heat away from the target at heat fluxes of at least about 1 kW/cm².

The present invention relates to a detector for measuring characteristics of an energetic particle beam generated by a radiation source, the detector including means to vary the incoming particle beam energy; a plurality of sensors arranged in parallel; and processing means capable of processing signals coming from said sensors in correlation with said energy variation.

Techniques for forming shallow junctions are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for forming shallow junctions. The method may comprise generating an ion beam comprising molecular ions based on one or more materials selected from a group consisting of: digermane (Ge₂H₆), germanium nitride (Ge₃N₄), germanium-fluorine compounds (GF_n, wherein n=1, 2, or 3), and other germanium-containing compounds. The method may also comprise causing the ion beam to impact a semiconductor wafer.

Devices and methods are provided for generating laser-accelerated high energy polyenergetic positive ion beams that are spatially separated and modulated based on energy level. The spatially separated and modulated high energy polyenergetic positive ion beams are used for radiation therapy. In addition, methods are provided for treating patients in radiation treatment centers using therapeutically suitable high energy polyenergetic positive ion beams that are provided by spatially separating and modulating positive ion beams. The production of radioisotopes using spatially separated and modulated laser-accelerated high energy polyenergetic positive ion beams is also provided.