5363 results about "Ion beam" patented technology

Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer. It is possible to perform a process without damage due to charging with the apparatus for depositing an atomic layer using a neutral beam and the method of depositing an atomic layer using the apparatus.

A neutral beam-assisted atomic layer chemical vapor deposition (ALCVD) apparatus is provided for uniformly depositing an oxide layer filling a planarization layer or a trench to increase uniformity and density of the oxide layer using neutral beams generated by a neutral beam generator without a seam or void occurring in an atomic layer deposition (ALD) or ALD-like chemical vapor deposition (CVD) process, thereby solving problems on the void or seam and low density occurring when a high-density planarization layer or a shallow trench having a width of 65 nm or less is formed, and improving a next generation oxide layer isolation process. The neutral beam-assisted ALCVD apparatus includes: an ALCVD apparatus, which deposits an oxide layer in order to form a pattern in a semiconductor substrate; and a neutral beam generator, which converts ion beams to neutral beams in order to remove a seam or void in the oxide layer deposited between the patterns, and applies the neutral beams to the oxide layer deposited to form the pattern.

A therapy system using an ion beam, which can shorten the time required for positioning a couch (patient). The therapy system using the ion beam comprises a rotating gantry provided with an ion beam delivery unit including an X-ray tube. An X-ray detecting device having a plurality of X-ray detectors can be moved in the direction of a rotation axis of the rotating gantry. A couch on which a patient is lying is moved until a tumor substantially reaches an extension of an ion beam path in the irradiating unit. The X-ray tube is positioned on the ion beam path and the X-ray detecting device is positioned on the extension of the ion beam path. With rotation of the rotating gantry, both the X-ray tube emitting an X-ray and the X-ray detecting device revolve around the patient. The X-ray is emitted to the patient and detected by the X-ray detectors after penetrating the patient. Tomographic information of the patient is formed based on signals outputted from the X-ray detectors. Information for positioning the couch is generated by using the tomographic information.

The present invention provides an increased degree of uniformity of radiation dose distribution for the interior of a diseased part. A particle beam therapy system includes a charged particle beam generation apparatus and an irradiation apparatus. An ion beam is generated by the charged particle beam generation apparatus. The irradiation apparatus exposes a diseased part to the generated ion beam. A scattering device, a range adjustment device, and a Bragg peak spreading device are installed upstream of a first scanning magnet and a second scanning magnet. The scattering device and the range adjustment device are combined together and moved along a beam axis, whereas the Bragg peak spreading device is moved independently along the beam axis. The scattering device moves to adjust the degree of ion beam scattering. The range adjustment device moves to adjust ion beam scatter changes caused by an absorber thickness adjustment. The Bragg peak spreading device moves to adjust ion beam scatter changes arising out of an SOBP device. These adjustments provide uniformity of radiation dose distribution for the diseased part.

A solid state nanopore device including two or more materials and a method for fabricating the same. The device includes a solid state insulating membrane having an exposed surface, a conductive material disposed on at least a portion of the exposed surface of the solid state membrane, and a nanopore penetrating an area of the conductive material and at least a portion of the solid state membrane. During fabrication a conductive material is applied on a portion of a solid state membrane surface, and a nanopore of a first diameter is formed. When the surface is exposed to an ion beam, material from the membrane and conductive material flows to reduce the diameter of the nanopore. A method for evaluating a polymer molecule using the solid state nanopore device is also described. The device is contacted with the polymer molecule and the molecule is passed through the nanopore, allowing each monomer of the polymer molecule to be monitored.

A particle therapy system, as one example of a particle beam irradiation system, comprises a charged particle beam generator and an irradiation field forming apparatus. An ion beam from the charged particle beam generator is irradiated to a diseased part in the body of a patient through the irradiation field forming apparatus. A scattering compensator and a range modulation wheel (RMW) are disposed on the upstream side in a direction of beam advance and are movable along a beam axis. The movement of the scattering compensator and the RMW adjusts a size of the ion beam entering a scatterer device, whereby a change in scattering intensity of the ion beam in the scatterer device is adjusted. As a result, a penumbra in dose distribution is reduced and a more uniform dose distribution in a direction perpendicular to the direction of beam advance is obtained in the diseased part.

A particle beam irradiation system capable of ensuring a more uniform dose distribution at an irradiation object even when a certain time is required from output of a beam extraction stop signal to the time when extraction of a charged particle beam from an accelerator is actually stopped. The particle beam irradiation system comprises a synchrotron, an irradiation device including scanning magnets and outputting an ion beam extracted from the synchrotron, and a control unit. The control unit stops the output of the ion beam from the irradiation device in accordance with the beam extraction stop signal, controls the scanning magnets to change an exposure position in a state in which the output of the ion beam is stopped, and after the change of the exposure position, starts the output of the ion beam from the irradiation device again. The control unit further outputs a next beam extraction stop signal when an increment of dose integrated from the time of a preceding beam extraction stop signal as a start point reaches a setting dose stored in advance.

A fabrication process for a tunneling magnetoresistance (TMR) sensor is disclosed. In particular, a unique method of forming a barrier layer of the TMR sensor is utilized so that the TMR sensor exhibits good magnetic and TMR properties. In one particular example, the barrier layer is formed by depositing a metallic film in an argon gas in a DC magnetron sputtering module, depositing an oxygen-doped metallic film in mixed xenon and oxygen gases in an ion-beam sputtering module, and oxidizing these films in an oxygen gas in an oxygen treatment module. This three-step barrier layer formation process minimizes oxygen penetration into ferromagnetic (FM) sense and pinned layers of the TMR sensor and optimally controls oxygen doping into the barrier layer. As a result, the FM sense and pinned layers exhibit controlled magnetic properties, the barrier layer provides a low junction resistance-area product, and the TMR sensor exhibits a high TMR coefficient.

For controlling a physical dimension of a solid state structural feature, a solid state structure is provided, having a surface and having a structural feature. The structure is exposed to a first periodic flux of ions having a first exposure duty cycle characterized by a first ion exposure duration and a first nonexposure duration for the first duty cycle, and then at a second periodic flux of ions having a second exposure duty cycle characterized by a second ion exposure duration and a second nonexposure duration that is greater than the first nonexposure duration, for the second duty cycle, to cause transport, within the structure including the structure surface, of material of the structure to the structural feature in response to the ion flux exposure to change at least one physical dimension of the feature substantially by locally adding material of the structure to the feature.