1078 results about "Ion beam" patented technology

Techniques for ribbon beam tuning segment tuning using machine learning are described. A method comprises receiving a set of control parameters representing configurations of multiple tuning segments of a tuning assembly for an ion implanter, predicting a set of process parameters representing one or more metrics associated with a beam property for an ion beam generated by the ion implanter based on the configurations of the multiple tuning segments using a control model, the control model comprising a forward model using a tuning matrix generated from a set of observations and a covariance matrix, and configuring a set of configurations for the multiple tuning segments based on the set of process parameters, the set of configurations for the multiple tuning segments to cause the ion beam to match a target metric for the ion beam. Other embodiments are described and claimed.

The invention relates to the technical field of semiconductor manufacturing, in particular to a sample with a pore structure, and provides a thinning method for preparing a pore sample by using a focused ion beam. According to the method, the front face of a target sample is thinned through FIB, then the back face of the target sample is thinned, the problem that in the prior art, a TEM target sheet generated when the front face and the back face of the target sample are thinned alternately is not of a pore internal structure is solved, and the technical effects of the method are that the efficiency of preparing the pore sample can be improved; and the picture shooting quality of the pore structure sample is improved.

The invention provides a laser crystal heterogeneous bonding method and an optical element, and relates to the technical field of laser, and the method comprises the steps: carrying out the ultra-precise surface treatment of the to-be-bonded surfaces of a laser crystal and a heterogeneous material based on the laser crystal and the heterogeneous material; respectively depositing at least one transition layer on the two to-be-bonded surfaces after surface treatment through a physical or chemical deposition method; the outermost layers of the two transition layers are made of the same material; carrying out ion beam activation treatment on the two surfaces to be bonded on which the transition layers are deposited so as to form high-activity surfaces; and aligning the two activated surfaces to be bonded in a vacuum environment at room temperature and applying pressure, and realizing room-temperature bonding through electrostatic force and chemical bond action to obtain a bonding body of the laser crystal and the heterogeneous material. According to the invention, thermal-mechanical property and chemical property differences among heterogeneous materials are overcome, and high-strength, low-stress and high-optical-quality bonding is realized.

A method to operate an ion implanter. The method may include conducting an ion beam into an acceleration stage of a linear accelerator in the ion implanter, where the ion beam is a bunched ion beam. The method may also include applying an RF signal to the acceleration stage while the ion beam passes through the acceleration stage, the RF signal comprising a determined frequency and a determined amplitude, and performing a phase scan using the RF signal. The phase scan may include varying a phase of the RF signal at the acceleration stage over a plurality of phase values; and recording a plurality of arrival times at a monitor, situated downstream of the acceleration stage, the plurality of arrival times corresponding to the plurality of phase values, respectively.

The invention relates to the technical field of cutting equipment, and provides heat exchanger tube nest numerical control cutting equipment and a high-precision cutting method.The heat exchanger tube nest numerical control cutting equipment comprises a base, a first supporting plate, a second supporting plate and a third supporting plate are arranged on the base in the length direction of the base, and the first supporting plate is slidably connected to the base; the second supporting plate and the third supporting plate are both fixed to the base. According to the vertical cutting device, a second rotating disc is accurately controlled to rotate through a third driving mechanism, the second rotating disc rotates to drive a stop lever to move in a limiting groove, a support is pushed to rotate with a third hinged shaft as the center, and the spraying direction of a plasma spraying gun is tangent to the tube wall of the tube nest; when plasma is cut, a reflecting surface is formed on the inner wall of the other side, so that plasma hedging is caused, the plasma beam is jetted in the tangential direction through tangent angle cutting, the hedging phenomenon is avoided, the cutting gap is controlled, and the cutting precision is improved compared with a traditional mode.

The invention discloses a transmission electron microscope sample preparation method for a lunar soil space weathered surface and application, and the method comprises the following steps: pasting target lunar soil particles on a carbon conductive adhesive tape, and enabling the target flat surfaces of the target lunar soil particles to be placed back to the carbon conductive adhesive tape; plating a layer of carbon film on the surface of the target lunar soil particle to obtain a scanning electron microscope sample of the target lunar soil particle; screening out a plurality of target research areas on the carbon film corresponding to the target flat surface; uniformly plating a layer of gold film on the carbon film corresponding to the target lunar soil particle scanning electron microscope sample; deposition operation of a research area protection layer is carried out on the gold film corresponding to the target research area through an electron beam and an ion beam in sequence; and performing slicing operation perpendicular to the target flat surface on the target lunar soil particle scanning electron microscope sample to obtain the target lunar soil particle transmission electron microscope sample. According to the method, lunar soil space weathering characteristics can be truly reserved, and an accurate and reliable sample is provided for lunar soil space weathering research.

The invention provides a rock mass internal pore intelligent characterization and three-dimensional reconstruction method and system, and relates to the technical field of rock mass internal structure analysis, and the method comprises the steps: obtaining a two-dimensional image sequence of a rock core in a target rock mass through a focused ion beam scanning electron microscope slicing-imaging sequence working mode; performing pore segmentation on each two-dimensional image in the two-dimensional image sequence by using the pore segmentation network to obtain a plurality of pore two-dimensional segmentation maps; on the basis of the pore two-dimensional segmentation map, constructing three-dimensional binary volume data of the pores according to a slice sequence; according to the three-dimensional binary volume data, performing three-dimensional reconstruction and structural characterization on rock core pores; according to the method, an imaging-recognition-reconstruction-evaluation integrated workflow is constructed, and a full-chain closed loop from nanoscale real three-dimensional data acquisition to intelligent recognition, three-dimensional reconstruction and quantitative analysis is realized.

The invention relates to the technical field of space exploration and lunar soil experiments, in particular to a melting centrifugal type mineral particle morphology remodeling device and a lunar soil glass ball preparation method. The device comprises a mineral protolith high-temperature melting system, a mineral melting slurry conveying system, a centrifugal mineral particle size control system and a mineral particle cooling and morphology remodeling system. The preparation method of the lunar soil glass ball comprises the following steps: adding basalt mineral powder and mineral melting additive powder into a melting centrifugal mineral particle morphology remodeling device to obtain simulated lunar soil glass balls with different particle sizes, and performing morphology transformation on the simulated lunar soil glass balls with different particle sizes by using an ion beam gun. And the lunar soil glass ball state of the impact melting history is reduced. According to the method, high-precision engineering mass production of components, morphology and mechanical properties of the lunar soil glass balls is realized through a fusion centrifugal forming and ion beam surface control composite process, and the problem of soil mechanical behavior deviation caused by morphology distortion of existing simulated lunar soil is solved.

The invention discloses an ion implantation process of an image sensor. The ion implantation process comprises the following steps: providing an ion implantation machine; the ion implantation machine continuously runs the nth ion implantation process for the first time, and n is a positive integer; based on the nth ion implantation process of the first time, the ion implantation machine automatically cuts a source, and continuously operates the (n + 1) th ion implantation process of the second time; the nth ion implantation process and the (n + 1) th ion implantation process are independently selected from any one of a P-type ion implantation process, an N-type ion implantation process and a D-type ion implantation process; the nth ion implantation process is different from the (n + 1) th ion implantation process; an ion beam in the P-type ion implantation process comprises boron difluoride and / or boron, an ion beam in the N-type ion implantation process comprises arsenic and / or phosphorus, and an ion beam in the D-type ion implantation process comprises indium. Through the process, the production efficiency of the image sensor and the low-brightness white dot performance are improved.

The invention discloses a hemispherical resonator three-dimensional quality finishing system and method, and the method comprises the steps: measuring the spherical thickness error data of a hemispherical resonator, decomposing the spherical thickness error data into a harmonic thickness error, selecting an ion beam diameter, and obtaining a corresponding removal function; carrying out edge continuation equivalent to the diameter of the removal function on the harmonic thickness error data to obtain a thickness error matrix, expanding the dimension of the removal function to be the same as the dimension of the thickness error matrix to obtain a material removal matrix, and correcting the thickness error matrix according to an incident angle of the removal function; residence time is solved according to the corrected thickness error matrix and the material removal matrix, then path planning is carried out according to the residence time, a machining G code is generated, and finally the machining G code is used for machining the hemispherical harmonic oscillator. The invention provides an efficient trimming method for harmonic oscillator spherical surface annular domain thickness errors, and solves the problems that coupling vibration is difficult to decouple and three-dimensional mass error distribution cannot be identified during quality trimming according to performance test feedback in a traditional method.

The invention relates to the technical field of vacuum equipment, and discloses an ion lens assembly, an ion source, a mass spectrometer and a mass spectrometry system. The ion lens assembly includes a deflection lens assembly and a return lens assembly. The deflection lens assembly is used for focusing an ion beam in the incident particle beam and enabling the ion beam to deflect towards a first direction. And the axis-returning lens assembly is used for receiving the ion beam from the deflection lens assembly, and the axis-returning lens assembly is used for focusing the received ion beam and enabling the ion beam to deflect towards a second direction.

Organotin compositions having the formula RSnL3 and corresponding synthetic methods are described. R includes aromatic, cyclic and / or halogenated ether moieties, or polyethers, and L includes hydrolysable groups. The organotin compositions may be formed as radiation-patternable coatings on substrates. The coatings may have an average thickness from about 1 nm to about 75 nm and have the formula RSnOn(OH)3-2n, forming an oxo-hydroxo network, where R is a hydrocarbyl ether group with 1 to 30 carbon atoms and 0<n<3 / 2, wherein regions of the coating are soluble in 2-heptanone in a puddle development step following a bake at 150° C. for 120 seconds. The coatings may be radiation-patternable using UV, EUV or ion beam radiation, and corresponding methods are described.

A processing system. The processing system may include a plasma chamber to generate a plasma; an extraction system, to extract an ion beam from the plasma chamber and deliver the ion beam to a substrate position, external to the plasma chamber; and an in-situ beam metrology system, having at least one detector to image the ion beam in imaging region that extends between the plasma chamber and the substrate position.

The invention discloses a method for preparing a section sample of a new energy automobile battery powder material, and relates to the technical field of battery material analysis, and the method comprises the following steps: uniformly mixing a battery powder material with a liquid conductive adhesive solution; pouring the mixture into a mold for curing, and demolding to obtain a conductive sample block with a regular shape; directly loading the conductive sample block in an ion beam cutting system for ion cutting to obtain a flat sample section; and surface metal spraying treatment is not needed, and electron microscope observation and analysis are directly carried out. According to the preparation method, the conductive adhesive solution is adopted for inlaying and is combined with mold forming, so that time-consuming mechanical grinding and polishing procedures in a traditional method are omitted, and the preparation period is greatly shortened; and meanwhile, an in-situ conductive network formed after the glue solution is cured is utilized to effectively inhibit the charge effect, so that direct observation without metal spraying is realized, sample preparation damage and plating interference are avoided, and the authenticity and accuracy of an analysis result are ensured. The method is simple and convenient to operate and good in repeatability.

Systems and methods are disclosed for determining the spatial distributions of radionuclides in tissue samples via mass spectrometry imaging. After administration of a radiopharmaceutical that contains a radionuclide, a mass spectrometry imaging system, such as an imaging mass cytometer or a multiplexed ion beam imaging system, is employed to interrogate a tissue sample to obtain a dataset. The radiopharmaceutical includes, or generates via radioactive decay of the radionuclide, a metal isotope detectable by the mass spectrometry imaging system. The dataset is processed to determine a spatial distribution of the metal isotope within the tissue sample, thereby characterizing the spatial distribution of the radionuclide delivered within the tissue sample. The tissue sample may be stained with a biomarker reagent that includes an additional metal isotope attached to a biomarker ligand, enabling the spatially multiplexed and co-registered analysis. The present methods can be adapted to infer and assess localization of non-radioactive pharmaceuticals.

The invention relates to the technical field of ion beam sputtering, in particular to an ion beam sputtering composite film control system and method. Comprising a parameter reverse solving module, a target material motion control module and an interface pollution inhibition module. The target component composition of the composite film and pre-stored target material physical parameter data are collected through the parameter reverse solving module, a reverse integral equation solving algorithm is utilized, beam spot shape parameters and target material motion track parameters are output, the target material motion control module establishes an elliptical beam spot and combined target dynamic coupling model, and the target material motion control module controls the target material motion. The interface pollution suppression module utilizes a laser emitter to emit high-energy pulse laser, etches a segmentation groove on the surface of a deposited film layer, reduces interface pollution, combines boundary beam attenuation, adjusts the beam intensity of an ion beam, and synergistically suppresses the interface pollution, so as to realize accurate control of the components of the composite film. And the component control precision and efficiency are improved.

A linear accelerator apparatus may include a beamline enclosure that defines a polygonal backbone, and a plurality of acceleration stages, disposed along a length of the beamline enclosure. A given acceleration stage may include a drift tube assembly to conduct an ion beam therethrough, a resonator, coupled to deliver an RF signal to the drift tube assembly, and a quadrupole assembly to shape the ion beam. As such, at a first acceleration stage, a first resonator may be disposed along a first side of the polygonal backbone, and at a second acceleration stage, adjacent to and downstream of the first acceleration stage, a second resonator may be disposed along a second side of the polygonal backbone, different from the first side.

The utility model relates to a room temperature vacuum pressure bonding device which comprises a vacuum cavity, the wall surface of the vacuum cavity is respectively provided with a first through hole and a second through hole, the first through hole is connected with a plasma generating assembly, the second through hole is connected with a vacuum generating assembly, and the vacuum generating assembly vacuumizes the interior of the vacuum cavity. Activating the wafer in the vacuum cavity through a plasma generation assembly; an air cylinder is fixed to the outer top wall face of the vacuum cavity, an output guide rod of the air cylinder extends into the vacuum cavity and is connected with the bonding pressing head, an operation table is fixed to the inner bottom wall face of the vacuum cavity, and an operation arm mechanism is installed in the vacuum cavity in a matched mode. By arranging the plasma generating assembly, the plasma beam can be emitted into the vacuum cavity, so that plasma bombardment activation is carried out on the wafer, the wafer can be bonded at the room temperature without heating the wafer, energy consumption is reduced, production time is greatly shortened, and production efficiency is effectively improved.

This invention discloses a conveniently detachable, actively water-cooled solid-state deuterium target based on a compact neutron source, comprising a micron-sized solid titanium film, a titanium film carrier, and a water-cooled substrate. Deuterium is deposited in the solid titanium film by bombarding it with a deuterium ion beam, and neutrons are generated by collisions with the subsequent deuterium ion beam. Oxygen-free copper, with its high thermal conductivity, is used as the carrier for the titanium film. The threaded structure on the side of the titanium film carrier allows for convenient installation and removal from the water-cooled substrate. The oxygen-free copper substrate, with multiple annular water-cooling structures inside, enables rapid and effective removal of heat flux from the target, preventing deuterium particles deposited in the solid titanium film from desorbing due to excessive temperature, thus avoiding impact on neutron yield. This invention provides a conveniently detachable, actively water-cooled solid-state deuterium target suitable for compact deuterium-deuterium neutron generators, providing a sound technical foundation for the widespread application of compact accelerator neutron source systems in production and daily life.

A rotating target high yield compact D-D neutron generator disclosed by the present invention comprises an ion source unit, a vacuum main body unit and a target unit, the ion source unit generates a deuterium ion beam, the deuterium ion beam is introduced into a vacuum chamber and passes through a leading-out accelerating electrode for acceleration, and the accelerated deuterium ion beam bombards the circumferential target surface of a molybdenum target to generate a deuterium ion beam. And deuterium-deuterium fusion reaction with deuterium nuclei injected into the molybdenum target in advance is carried out, fast neutrons are released, and the neutron yield is improved. The rotating driver of the target unit drives the molybdenum target of the cylindrical structure to rotate through the insulating rotating shaft, the molybdenum target rotates to distribute beam power to the circumferential target surface of the molybdenum target, a cooling medium is conveyed to one side of the inner side wall of the molybdenum target in combination with the cooling channel, the molybdenum target is cooled, and the service life of the target unit can be effectively prolonged. The leading-out accelerating electrode is located in the vacuum cavity, operation of the vacuum main body unit is not affected by external humidity and temperature environment conditions, high-voltage ignition discharge can be effectively restrained, and the safety performance of a high-voltage electric field is improved.

A workpiece processing system with an ion source that includes two or more extraction apertures, each producing two beamlets at different extraction angles, is disclosed. The ion source includes blockers disposed within the ion source that manipulate the plasma sheath to allow extraction of ions at different extraction angles. The ion source may include at least two blockers, each proximate to a respective extraction aperture. These blockers may be different sizes or have different offsets relative to their respective extraction aperture. These differences result in ion beamlets of different extraction angles being extracted through the different extraction apertures. In another embodiment, the heights of the extraction apertures may differ. The blockers associated with these different sized extraction apertures may be identical, or may differ. Further, in some embodiments, the blockers may be electrically biased at different voltages to produce ion beamlets of different extraction angles.

An ion extraction optics for extracting a plurality of ion beams includes an extraction plate defining an extraction aperture, and a beam blocker located adjacent the extraction aperture and mounted to the extraction plate by a first actuator and a second actuator, wherein the beam blocker and the extraction aperture define a first extraction slit and a second extraction slit, and wherein the first actuator and the second actuator are adapted to move the beam blocker relative to the extraction plate.

Methods and systems for multi-beam, parallel-beam, deterministic, or super mass spectrometry that include an ion source that produces ions, and two or more ion trapping devices or mass spectrometers, each having an independent sampling inlet. The two or more ion trapping devices or mass spectrometers receive the ions from the ion source via the sampling inlet of each of the ion trapping devices or mass spectrometers such that each sampling inlet provides an ion beam to each corresponding ion trapping device or mass spectrometer.

The invention relates to the technical field of semiconductors, and provides a TEM sample preparation method. The method comprises the following steps: carrying out primary thinning treatment on a to-be-processed sample by using a high-energy ion beam to obtain a primary thinned sample; carrying out at least one time of cross beveling treatment on the longitudinal section of the preliminarily thinned sample by using a low-energy ion beam to obtain a TEM sample to be analyzed; wherein the one-time cross beveling treatment comprises two-time one-way beveling treatment, and in the two-time one-way beveling treatment, the sign of an included angle between a vertical line perpendicular to the cross section of the primarily thinned sample and the incident direction of the ion beam is opposite to that of an included angle between the vertical line and the incident direction of the ion beam. According to the application, the ion beam drawing marks on the surface of the TEM sample can be eliminated, and the surface flatness of the sample is relatively good, so that the subsequent TEM imaging quality is improved.

The invention relates to the technical field of ion beam physical calculation, in particular to an ion beam optical property evaluation method based on a CPU-GPU hybrid parallel stable double-gradient conjugate algorithm. According to the technical scheme, the method comprises the following steps that a CPU-GPU hybrid parallel architecture is initialized, and CPU end and GPU end memory allocation, CUDA related object creation and GPU equipment initialization and parameter setting are completed; constructing a linear equation set, a sparse coefficient matrix A and a right-end vector b, and setting an initial solution vector, convergence precision epsilon and related parameters of the number of iterations; and analyzing the sparseness of the coefficient matrix A. Through combination of three core mechanisms of CPU-GPU cooperative calculation, dynamic load balancing and intelligent preprocessor selection, efficient, stable and universal evaluation of the ion beam optical characteristics is successfully realized, and an excellent solution is provided for solving the solving problem of a large-scale sparse linear equation set in the field of high-performance calculation.

The utility model provides an ion source cavity structure, an ion source and an ion implanter. The cavity structure comprises a first arc chamber, a second arc chamber, a first cathode unit, a second cathode unit and a switch. One end of the first arc chamber away from the second arc chamber is provided with an air inlet, and one end of the second arc chamber away from the first arc chamber is provided with an ion outlet; the first cathode unit is arranged on one side of the first arc chamber, and the first cathode unit and the first arc chamber are electrically insulated from each other; the switch is connected in series with the first cathode unit; the second cathode unit is arranged on one side of the second arc chamber, and the second cathode unit and the second arc chamber are electrically insulated from each other. According to the utility model, the gas dissociation efficiency can be effectively improved, so that the size of an ion beam can be effectively improved, the whole process circulation time during the running of goods on a machine table is reduced, and the production efficiency of the machine table is improved.

The application provides a preparation method of a dot array biochip. The application forms a nano-pore dot array on a chip substrate through nano-imprinting, uniformly forms a functional modification layer on the dot array surface through a hydrogel, and then performs etching treatment on the substrate by using a deflected ion beam; an angle between an ion beam incident direction and a surface of a slide stage is θ during etching, so as to perform selective etching on the functional modification layer; through the etching with the angle, the functional modification layer of the bottom and part of the sidewall of the nano-pore can be reserved, and the functional modification layer of other parts is etched clean by the ion beam; the ion source of the IBE is argon, which is stable in chemical property and has no obvious influence on the chemical composition of the material, so that the damage of chemical residues to the performance of the functional material is avoided; the IBE does not produce chemical reaction byproducts, so that the risk of surface residual particles and pollution is reduced; the ion beam energy of the IBE is adjustable, the relatively mild etching avoids damage to the substrate, and the influence on the lattice and surface state of the surface layer material is small.

The dual focused ion beam and scanning electron beam system includes an electron source that generates an electron beam and an ion source that generates an ion beam. The electron beam column directs an electron beam at a normal angle relative to a top surface of the stage. An ion beam column directs the ion beam at the stage. The ion beam is at an angle relative to the electron beam. A detector receives the electron beam reflected from the wafer on the stage.

Methods and apparatus are disclosed for determining a distance from a cut face of an active sample to a target plane, using data acquired from a reference sample. The active and reference samples have congruent structure, allowing reference data to be used as an index. An SEM image of the cut face is compared with the reference data to determine position within the active sample, and thereby the remaining distance to the target plane. The technique can be applied repeatedly between phases of ion beam milling until an endpoint at the target plane is reached. Consistent, accurate endpointing is achieved. The technique is suitable for preparing 5-100 nm thick lamella for TEM analysis of electronic circuits and can be used in a wide range of applications. Variations are disclosed.