841 results about "Ion beam" patented technology

The invention provides a laser crystal heterogeneous bonding method and an optical element, and relates to the technical field of laser, and the method comprises the steps: carrying out the ultra-precise surface treatment of the to-be-bonded surfaces of a laser crystal and a heterogeneous material based on the laser crystal and the heterogeneous material; respectively depositing at least one transition layer on the two to-be-bonded surfaces after surface treatment through a physical or chemical deposition method; the outermost layers of the two transition layers are made of the same material; carrying out ion beam activation treatment on the two surfaces to be bonded on which the transition layers are deposited so as to form high-activity surfaces; and aligning the two activated surfaces to be bonded in a vacuum environment at room temperature and applying pressure, and realizing room-temperature bonding through electrostatic force and chemical bond action to obtain a bonding body of the laser crystal and the heterogeneous material. According to the invention, thermal-mechanical property and chemical property differences among heterogeneous materials are overcome, and high-strength, low-stress and high-optical-quality bonding is realized.

A method to operate an ion implanter. The method may include conducting an ion beam into an acceleration stage of a linear accelerator in the ion implanter, where the ion beam is a bunched ion beam. The method may also include applying an RF signal to the acceleration stage while the ion beam passes through the acceleration stage, the RF signal comprising a determined frequency and a determined amplitude, and performing a phase scan using the RF signal. The phase scan may include varying a phase of the RF signal at the acceleration stage over a plurality of phase values; and recording a plurality of arrival times at a monitor, situated downstream of the acceleration stage, the plurality of arrival times corresponding to the plurality of phase values, respectively.

The invention provides a rock mass internal pore intelligent characterization and three-dimensional reconstruction method and system, and relates to the technical field of rock mass internal structure analysis, and the method comprises the steps: obtaining a two-dimensional image sequence of a rock core in a target rock mass through a focused ion beam scanning electron microscope slicing-imaging sequence working mode; performing pore segmentation on each two-dimensional image in the two-dimensional image sequence by using the pore segmentation network to obtain a plurality of pore two-dimensional segmentation maps; on the basis of the pore two-dimensional segmentation map, constructing three-dimensional binary volume data of the pores according to a slice sequence; according to the three-dimensional binary volume data, performing three-dimensional reconstruction and structural characterization on rock core pores; according to the method, an imaging-recognition-reconstruction-evaluation integrated workflow is constructed, and a full-chain closed loop from nanoscale real three-dimensional data acquisition to intelligent recognition, three-dimensional reconstruction and quantitative analysis is realized.

The invention discloses an ion implantation process of an image sensor. The ion implantation process comprises the following steps: providing an ion implantation machine; the ion implantation machine continuously runs the nth ion implantation process for the first time, and n is a positive integer; based on the nth ion implantation process of the first time, the ion implantation machine automatically cuts a source, and continuously operates the (n + 1) th ion implantation process of the second time; the nth ion implantation process and the (n + 1) th ion implantation process are independently selected from any one of a P-type ion implantation process, an N-type ion implantation process and a D-type ion implantation process; the nth ion implantation process is different from the (n + 1) th ion implantation process; an ion beam in the P-type ion implantation process comprises boron difluoride and / or boron, an ion beam in the N-type ion implantation process comprises arsenic and / or phosphorus, and an ion beam in the D-type ion implantation process comprises indium. Through the process, the production efficiency of the image sensor and the low-brightness white dot performance are improved.

Organotin compositions having the formula RSnL3 and corresponding synthetic methods are described. R includes aromatic, cyclic and / or halogenated ether moieties, or polyethers, and L includes hydrolysable groups. The organotin compositions may be formed as radiation-patternable coatings on substrates. The coatings may have an average thickness from about 1 nm to about 75 nm and have the formula RSnOn(OH)3-2n, forming an oxo-hydroxo network, where R is a hydrocarbyl ether group with 1 to 30 carbon atoms and 0<n<3 / 2, wherein regions of the coating are soluble in 2-heptanone in a puddle development step following a bake at 150° C. for 120 seconds. The coatings may be radiation-patternable using UV, EUV or ion beam radiation, and corresponding methods are described.

A processing system. The processing system may include a plasma chamber to generate a plasma; an extraction system, to extract an ion beam from the plasma chamber and deliver the ion beam to a substrate position, external to the plasma chamber; and an in-situ beam metrology system, having at least one detector to image the ion beam in imaging region that extends between the plasma chamber and the substrate position.

The invention discloses a method for preparing a section sample of a new energy automobile battery powder material, and relates to the technical field of battery material analysis, and the method comprises the following steps: uniformly mixing a battery powder material with a liquid conductive adhesive solution; pouring the mixture into a mold for curing, and demolding to obtain a conductive sample block with a regular shape; directly loading the conductive sample block in an ion beam cutting system for ion cutting to obtain a flat sample section; and surface metal spraying treatment is not needed, and electron microscope observation and analysis are directly carried out. According to the preparation method, the conductive adhesive solution is adopted for inlaying and is combined with mold forming, so that time-consuming mechanical grinding and polishing procedures in a traditional method are omitted, and the preparation period is greatly shortened; and meanwhile, an in-situ conductive network formed after the glue solution is cured is utilized to effectively inhibit the charge effect, so that direct observation without metal spraying is realized, sample preparation damage and plating interference are avoided, and the authenticity and accuracy of an analysis result are ensured. The method is simple and convenient to operate and good in repeatability.

A rotating target high yield compact D-D neutron generator disclosed by the present invention comprises an ion source unit, a vacuum main body unit and a target unit, the ion source unit generates a deuterium ion beam, the deuterium ion beam is introduced into a vacuum chamber and passes through a leading-out accelerating electrode for acceleration, and the accelerated deuterium ion beam bombards the circumferential target surface of a molybdenum target to generate a deuterium ion beam. And deuterium-deuterium fusion reaction with deuterium nuclei injected into the molybdenum target in advance is carried out, fast neutrons are released, and the neutron yield is improved. The rotating driver of the target unit drives the molybdenum target of the cylindrical structure to rotate through the insulating rotating shaft, the molybdenum target rotates to distribute beam power to the circumferential target surface of the molybdenum target, a cooling medium is conveyed to one side of the inner side wall of the molybdenum target in combination with the cooling channel, the molybdenum target is cooled, and the service life of the target unit can be effectively prolonged. The leading-out accelerating electrode is located in the vacuum cavity, operation of the vacuum main body unit is not affected by external humidity and temperature environment conditions, high-voltage ignition discharge can be effectively restrained, and the safety performance of a high-voltage electric field is improved.

A workpiece processing system with an ion source that includes two or more extraction apertures, each producing two beamlets at different extraction angles, is disclosed. The ion source includes blockers disposed within the ion source that manipulate the plasma sheath to allow extraction of ions at different extraction angles. The ion source may include at least two blockers, each proximate to a respective extraction aperture. These blockers may be different sizes or have different offsets relative to their respective extraction aperture. These differences result in ion beamlets of different extraction angles being extracted through the different extraction apertures. In another embodiment, the heights of the extraction apertures may differ. The blockers associated with these different sized extraction apertures may be identical, or may differ. Further, in some embodiments, the blockers may be electrically biased at different voltages to produce ion beamlets of different extraction angles.

An ion extraction optics for extracting a plurality of ion beams includes an extraction plate defining an extraction aperture, and a beam blocker located adjacent the extraction aperture and mounted to the extraction plate by a first actuator and a second actuator, wherein the beam blocker and the extraction aperture define a first extraction slit and a second extraction slit, and wherein the first actuator and the second actuator are adapted to move the beam blocker relative to the extraction plate.

The invention relates to the technical field of semiconductors, and provides a TEM sample preparation method. The method comprises the following steps: carrying out primary thinning treatment on a to-be-processed sample by using a high-energy ion beam to obtain a primary thinned sample; carrying out at least one time of cross beveling treatment on the longitudinal section of the preliminarily thinned sample by using a low-energy ion beam to obtain a TEM sample to be analyzed; wherein the one-time cross beveling treatment comprises two-time one-way beveling treatment, and in the two-time one-way beveling treatment, the sign of an included angle between a vertical line perpendicular to the cross section of the primarily thinned sample and the incident direction of the ion beam is opposite to that of an included angle between the vertical line and the incident direction of the ion beam. According to the application, the ion beam drawing marks on the surface of the TEM sample can be eliminated, and the surface flatness of the sample is relatively good, so that the subsequent TEM imaging quality is improved.

The invention relates to the technical field of ion beam physical calculation, in particular to an ion beam optical property evaluation method based on a CPU-GPU hybrid parallel stable double-gradient conjugate algorithm. According to the technical scheme, the method comprises the following steps that a CPU-GPU hybrid parallel architecture is initialized, and CPU end and GPU end memory allocation, CUDA related object creation and GPU equipment initialization and parameter setting are completed; constructing a linear equation set, a sparse coefficient matrix A and a right-end vector b, and setting an initial solution vector, convergence precision epsilon and related parameters of the number of iterations; and analyzing the sparseness of the coefficient matrix A. Through combination of three core mechanisms of CPU-GPU cooperative calculation, dynamic load balancing and intelligent preprocessor selection, efficient, stable and universal evaluation of the ion beam optical characteristics is successfully realized, and an excellent solution is provided for solving the solving problem of a large-scale sparse linear equation set in the field of high-performance calculation.

The utility model provides an ion source cavity structure, an ion source and an ion implanter. The cavity structure comprises a first arc chamber, a second arc chamber, a first cathode unit, a second cathode unit and a switch. One end of the first arc chamber away from the second arc chamber is provided with an air inlet, and one end of the second arc chamber away from the first arc chamber is provided with an ion outlet; the first cathode unit is arranged on one side of the first arc chamber, and the first cathode unit and the first arc chamber are electrically insulated from each other; the switch is connected in series with the first cathode unit; the second cathode unit is arranged on one side of the second arc chamber, and the second cathode unit and the second arc chamber are electrically insulated from each other. According to the utility model, the gas dissociation efficiency can be effectively improved, so that the size of an ion beam can be effectively improved, the whole process circulation time during the running of goods on a machine table is reduced, and the production efficiency of the machine table is improved.

The present invention provides a silicon-carbon composite negative electrode material and a preparation method therefor. The silicon-carbon composite negative electrode material is obtained by depositing silicon-containing particles on pores and surfaces of porous carbon, and then performing surface carbon coating. In an XPS Si 2p spectrum of the silicon-carbon composite negative electrode material, the surface of the material satisfies: 0.4<SSi-Si / SC-Si-O<0.7; and the interior satisfies: 3<SSi-C / SC-Si-O<4. The surface of the material refers to the XPS spectrum measured when the material has not been etched by an argon ion beam, and the interior of the material refers to the XPS spectrum measured after the material has been etched by an argon ion beam to a depth of 70nm. A material having the specified XPS Si 2p spectrum has significantly improved structural strength, capacity and conductivity, thereby improving cycle stability and fast charging performance, and achieving high energy density, for a lithium ion battery assembled using same.

An ion extraction optics for extracting a plurality of ion beams includes an extraction plate defining an extraction aperture, and a beam blocker located adjacent the extraction aperture and mounted to the extraction plate by a first actuator and a second actuator, wherein the beam blocker and the extraction aperture define a first extraction slit and a second extraction slit, and wherein the first actuator and the second actuator are adapted to move the beam blocker relative to the extraction plate.

This application provides a method for manufacturing a semiconductor structure. The method includes: obtaining a first surface morphology of a structure to be modified, the structure to be modified including a substrate and multiple sidewalls, and the structure to be modified exhibiting parity effects; determining a target incident direction of an ion beam based on the arrangement direction of the multiple sidewalls; determining a target incident angle of the ion beam based on the first surface morphology of the structure to be modified and the sidewall density of the multiple sidewalls; emitting an ion beam at the target incident angle along the target incident direction to etch the structure to be modified using the ion beam, thereby modifying the first surface morphology of the structure to be modified into a second surface morphology, reducing the parity effects of the second surface morphology. That is, by selecting a specific incident angle and incident along a specific direction, the physical bombardment force of the ion beam is used to smooth the rounded corners of the sidewall shoulders, achieve squareness of the sidewall etched morphology, improve the high symmetry of the morphology between the sidewalls, and minimize the parity effects.

The invention relates to the technical field of space irradiation environment simulation based on ultra-short and ultra-strong laser, and discloses a space irradiation environment simulation device and method based on ultra-short and ultra-strong laser. The device comprises a laser compression cavity, a laser focusing and optical diagnosis system, a primary target system, a secondary conversion target system, a beam sorter, an ion transport system, an electron transport system and a test target holder system. The multi-particle synchronous irradiation device has the beneficial effects that the interaction between the laser pulse and the target material is accurately controlled, so that high-energy ion beams, electron beams and other various particles can be generated, and multi-particle synchronous irradiation is successfully realized. The synchronous irradiation capability enables the experiment to simulate a complex irradiation environment in the space more truly, further reveals the interaction and synergistic effect among a plurality of particles, and overcomes the limitation that a traditional large accelerator can only simulate a single environment.

The invention relates to the technical field of high-current particle beam diagnosis, in particular to a high-energy ion beam three-dimensional reconstruction method and system based on secondary electron emission signals. According to the technical scheme, the method comprises the steps of data preprocessing and conversion, geometric space up-sampling, point assignment generation and model boundary division and output. According to the method, the spatial sparsity of original data is overcome through geometric upsampling, the fidelity of physical attribute reconstruction is remarkably improved by utilizing a topological structure based on a minimum spanning tree and a primary function frequency superposition model, automatic and accurate division of beam boundaries is realized according to a physical threshold value, an end-to-end automatic processing flow is formed, and the method has the advantages that the method is simple and convenient to operate and high in practicability. And outputting a visual three-dimensional model supporting interactive analysis, systematically solving the problems of data sparsity, interpolation distortion and boundary fuzziness in the prior art, and realizing high-precision and high-efficiency reconstruction and visual analysis of the three-dimensional form of the high-energy ion beam.

The invention relates to an ion-optical component comprising at least one electrode arrangement (12) with a circular segment-shaped inner electrode (17) and an annular segment-shaped outer electrode (18) circumferentially surrounding the inner electrode (17), as well as with two circular segment-shaped plates (23) which are surrounded on both sides of the inner electrode (17) and circumferentially by the outer electrode (18) and form a uniform annular segment-shaped gap (25) between each of the plates (23) and the outer electrode (18), wherein the ion-optical component comprises two electrode arrangements (12) which each extend over a sector with an angle ϕ / 2, where 90°<ϕ<180°, and are arranged one behind the other in such a way that a trajectory of an ion beam (14) through the ion-optical component is s-shaped.

The application discloses a Marx high-voltage pulse power supply based on a high-gain boost type DC-DC converter, and the circuit is composed of an input DC power supply, two power switching tubes, a switching inductor and a cascaded Marx generator; the cascaded Marx generator can be expanded to n levels, and can be used in application occasions requiring high-voltage pulse power supplies, such as cancer treatment in medical treatment, water treatment, waste gas treatment, sterilization, electron and ion beam generation and acceleration, electrostatic dust removal and the like. Under the same working condition, the Marx high-voltage pulse power supply can realize high-gain pulses, and compared with the existing Marx high-voltage pulse power supply, can realize lower switching power loss and higher voltage gain. Meanwhile, the Marx high-voltage pulse power supply also has the advantages of simple topological structure, few modules, few electronic devices and low cost. Therefore, the Marx high-voltage pulse power supply has important economic value and practical engineering significance.

The application discloses an ITO surface roughening treatment method, comprising the following steps: preparing a GaN wafer, wherein the surface of the GaN wafer is covered with an ITO film layer; performing ion beam bombardment on the ITO film layer by using a preset ion dose of a low-energy ion beam, and meanwhile, the GaN wafer is self-rotated at a preset speed, so that a regularly arranged point structure of nanometer size is formed on the surface of the ITO film layer, and an ITO film layer after surface roughening is obtained. The application has the advantages of simple operation, low cost, high production efficiency, and the like, and can effectively improve the external quantum efficiency of an LED chip and improve the light-emitting brightness of the LED.

This invention belongs to the field of optical functional thin film materials, specifically relating to a silicon-oxygen-aluminum ternary composite optical coating material and its preparation method. Addressing the problem in existing technologies of achieving high transmittance, high hardness, and corrosion resistance synergistically within a single ternary material system, this invention utilizes a single-crystal thin film with a completely ordered single-phase structure epitaxially grown on a MgAl2O4 spinel single-crystal substrate, co-doped with transition metal ions and protons. Employing a combined laser molecular beam epitaxy and low-temperature proton implantation technique, alternatingly ablates the silicon target, aluminum target, and doped target, and simultaneously irradiating with a low-energy hydrogen ion beam under ultra-high vacuum, atomic-level epitaxial growth and in-situ proton embedding are achieved, resulting in a unified high transmittance, high hardness, and corrosion resistance.

The invention relates to a transmission electron microscope sample and a preparation method thereof. The method comprises the following steps: determining a target area on a sample under a scanning electron microscope; forming a mark in a target area of the sample by using electron beam induced deposition, and determining a front cutter stopping position and a back cutter stopping position; forming a protective layer on the surface of the target area; and thinning the sample and the protective layer from the front side to the front side cutter stop position based on the mark by using a focused ion beam, and thinning the sample and the protective layer from the back side to the back side cutter stop position based on the mark by using the focused ion beam, so as to obtain the transmission electron microscope sample. The safety and the success rate of the preparation process can be effectively improved when the sample wafer is prepared.

The present invention relates to the technical field of thermal imaging of mid-infrared focal plane detectors, and more particularly relates to a method for preparing a mid-infrared focal plane detector based on Sn-doped PbSe quantum dots. The mid-infrared focal plane detector is prepared on a readout integrated circuit (ROIC) substrate, and is composed of an Au bottom electrode, a PbS hole transport layer, a Sn-doped PbSe photosensitive layer, and a PIN heterojunction of a ZnO electron transport layer sequentially constructed by an ion beam sputtering method, a spin-coating method, a spin-coating method, and an ion beam sputtering method, respectively, and an indium tin oxide (ITO) top electrode finally evaporated by an ion beam sputtering method.

The present invention relates to a silicon-carbon composite, an anode active material comprising same, an anode composition, an anode, a lithium secondary battery, a battery module and a battery pack, the silicon-carbon composite having, when etching is performed with an argon (Ar) ion beam at an energy of 1,000 eV for 5,000 seconds, and then XPS analysis is performed, a ratio of an Si element proportion measured by Si2p spectrum to an N element proportion measured by N1s spectrum of 35-200.

The application discloses a method for constructing sub-nanometer plasmonic nanocavity, comprising the following steps: (1) preparing a flexible metal nanometer array film; (2) constructing a spacing layer on the exposed metal side of a flexible metal nanometer array film, and then placing another flexible metal nanometer array film on the exposed metal side of the spacing layer, so that the two flexible metal nanometer array films are adsorbed and attached by Van der Waals force, thereby obtaining a plasmonic nanocavity, which allows polarized excitation, realizes the enhancement of molecular signal and carries out the research on adsorption form. Compared with the chemical synthesis method, the application is more accurate and easy to realize in the control of structure gap, and the substrate is more uniform; compared with the nanometer gap prepared by photolithography and ion beam, the substrate process of the application is simple, easy to operate and short in time consumption, and the structure has a controllable sub-nanometer gap. The method has simple preparation process, high repeatability and stability.

An ion focusing device comprising an ion collection element comprising a plurality of N curved electrodes extending around an axis of the ion collection element and an aperture on an axis of the ion collection element. A multipole ion guide adjacent the ion collection element and having a plurality of N elongate electrodes extending parallel to and around an axis of the multipole ion guide, wherein the axis of the multipole ion guide coincides with the axis of the ion collection element, wherein each of the N curved electrodes of the ion collection element are configured to receive a radio frequency, RF, signal having the same phase as an RF signal configured to be applied to at least one elongate electrode of the plurality of elongate electrodes of the multipole ion guide, and further wherein at least two of the N electrodes of the ion collection element are configured to receive RF signals of a different phase.

The invention discloses a porous transmission layer and a preparation method and application thereof, and relates to the technical field of water electrolysis hydrogen production. The preparation method of the porous transmission layer comprises the following steps: S1, performing etching treatment on at least part of the surface of a base material by using a focused ion beam so as to form arrayed grooves, and obtaining a to-be-deposited base material; and S2, a non-noble metal layer and a noble metal layer are sequentially deposited on the surface of the to-be-deposited base material, and the porous transmission layer is obtained. The porous transmission layer can effectively transmit gas and moisture required by reaction, reduce interface contact resistance, improve conductivity and guarantee long-term stable operation and high-efficiency performance of the proton exchange membrane electrolytic cell.

The invention discloses a copper-plated circuit board and a copper plating process thereof, and relates to the technical field of circuit board manufacturing. The copper plating process of the circuit board comprises the following steps: after carrying out surface cleaning pretreatment on a dielectric substrate, injecting metal particles by adopting a high-energy ion beam to form a metal seed layer; performing magnetic filtering arc deposition treatment on the surface of the metal seed layer to form a metal bottom layer; and performing copper plating on the surface of the metal bottom layer through pulse magnetron sputtering treatment to form a copper foil layer combined with the dielectric substrate. According to the method, the metal particles are injected through the high-energy ion beam, then the metal layer is deposited on the surface in an electric arc mode, then copper plating is conducted through pulse magnetron sputtering, high-strength combination of the metal copper foil and the base material is achieved by combining physical vapor deposition and the ion injection technology, meanwhile, the surface roughness of the copper foil is low, and the requirements for reliability and low loss of the circuit board are met.