2005 results about "Ion beam" patented technology

The invention discloses a parameter adjustment method of an ion implantation machine. The method comprises the following steps: acquiring a plurality of first parameters of an ion beam; acquiring historical data and screening at least one group of historical data close to the plurality of first parameters, wherein each group of historical data at least comprises a plurality of first parameters; inputting the plurality of first parameters and the historical data into a hybrid deep neural network model, and obtaining a predicted output variable; and adjusting a third parameter of the ion implantation machine according to the predicted output variable. According to the parameter adjustment method of the ion implantation machine provided by the invention, the third parameter of the machine is adjusted by adopting the hybrid deep neural network model, so that automatic ion beam parameter adjustment can be realized, the manual participation rate is reduced, and meanwhile, the working efficiency and the working accuracy of the machine which works for a long time can be improved.

A method comprises: providing FIB and CPB columns with FIB and CPB optical axes coinciding at a wafer surface; in the coincidence arrangement, removing a cross section surface layer of a measurement site of a wafer using the FIB column to make a new cross section accessible for imaging; reducing a working distance between the CPB imaging column and the wafer surface in a direction along the axis of the CPB imaging column; imaging the new cross section at the measurement site of the wafer with the CPB imaging column at the reduced working distance and thus not in the coincidence arrangement; and increasing the working distance between the CPB imaging column and the wafer surface in the direction along the axis of the CPB imaging column until the coincidence arrangement is reached.

The invention belongs to the technical field of wafer processing, and discloses a multi-section high-flatness wafer cutting method which comprises the following steps: S1, wafer pretreatment and stress buffer layer preparation; s2, performing layered rough cutting by using a diamond blade; s3, plasma fine cutting and interface repairing; s4, performing multi-layer cooling and surface polishing; and S5, surface quality closed-loop detection is carried out. According to the method, copper layer residues and resin carbonization defects are synchronously eliminated. Cryogenic treatment induces lattice reconstruction through ultrafast phase change and blocks a chain reaction of dislocation defects, so that the intrinsic mechanical strength of the material is recovered, and a chemical mechanical polishing system activates the self-repairing characteristic of the material while removing a sub-surface damaged layer through the synergistic effect of abrasive chemical activity and mechanical shearing force, so that an atomic-scale smooth interface is formed, and the self-repairing performance of the material is improved. A closed-loop detection system depends on multi-dimensional data fusion and ion beam fixed-point repair, accurate positioning and performance recovery of cross-scale defects are achieved, and the electrical integrity of a chip functional area is ensured.

The invention relates to a vacuum etching control system and a vacuum etching machine. The vacuum etching machine comprises a vacuum cavity, an ion source and a rotary workpiece table, wherein the ion source and the rotary workpiece table are arranged in the vacuum cavity; wherein the rotary workpiece table and the ion source are respectively connected to an industrial personal computer arranged outside the vacuum cavity; the rotary workpiece table rotates and swings the workpiece disc in the etching process, the ion source outputs ion beams to etch workpieces to be etched on the workpiece disc, and the industrial personal computer controls the ion source to output the ion beams with set parameters according to the current etching process. The maximum safety angle of swinging of the workpiece disc is calculated according to the target position of the rotary workpiece table in the vacuum cavity, the coverage range of swinging of the workpiece disc and the position parameters of all parts in the vacuum cavity, and the workpiece disc is controlled to swing within the maximum safety angle; according to the technical scheme, the internal space of the vacuum cavity is utilized to the maximum extent, the limitation on the etching process is reduced, the etching process effect is improved, and most vacuum etching process requirements are met.

The invention relates to the field of metal surface treatment, and discloses a multi-layer vacuum coating method for enhancing the surface of a high-precision metal part, which comprises the following steps: S1, surface treatment: removing surface pollutants and oxide layers through plasma cleaning, and coarsening the surface of a base material through laser etching; s2, coating deposition is conducted, specifically, a metal transition layer and a multi-layer nano hard coating are deposited in an enhanced mode through plasma; s3, depositing a self-lubricating coating: depositing the self-lubricating coating by pulse laser; s4, post-treatment: carrying out ion beam assisted post-treatment; s5, heat treatment: performing low-temperature heat treatment to eliminate stress. Through the plasma enhanced PVD and pulse laser deposition technology, the multi-layer nano coating is deposited under the low-temperature condition, the problem of thermal deformation of a heat-sensitive metal base material caused by a traditional high-temperature process is solved, and it is ensured that the multi-layer coating with high hardness and high compactness can still be formed on the premise that the size precision of the base material is not affected; and therefore, the method can be widely applied to surface treatment of high-precision parts.

The invention belongs to the technical field of precision measurement, and discloses a heating, excitation and frequency cracking measurement method for a quartz hemispherical harmonic oscillator, which adopts an infrared light source to uniformly heat the quartz hemispherical harmonic oscillator, and performs excitation through a piezoelectric excitation sheet based on a'four-antinode 'vibration mode of the quartz hemispherical harmonic oscillator. The method comprises the following steps: reading a vibration signal through a laser vibration meter, analyzing the direction of a frequency splitting decomposition and stiffness non-uniform axis of the quartz hemispherical harmonic oscillator, performing etching de-weighting through an ion beam, and trimming the stiffness non-uniformity of the quartz hemispherical harmonic oscillator. According to the method, the problem that the circumferential rigidity of the quartz hemispherical resonator is not uniform is solved, and compared with the conventional harmonic oscillator frequency cracking trimming method, the harmonic oscillator frequency cracking is leveled from the rigidity trimming angle, so that the temperature change interference resistance characteristic of the frequency cracking after trimming of the quartz hemispherical resonator gyroscope is improved.

The invention discloses an in-situ identification analysis method for superfine non-metallic inclusions in steel, and mainly solves the technical problems that the superfine non-metallic inclusions in the existing steel are difficult to identify and extract and the microstructure and phase composition of the inclusions are difficult to characterize. According to the technical scheme, the method for detecting and analyzing the small-size non-metallic inclusions in the steel by using the scanning electron microscope comprises the following steps: (1) preparing a metallographic sample; 2) preparing a transmission electron microscope sample, and determining an area where the inclusion of the metallographic sample is located by using a scanning electron microscope; carrying out accurate positioning and in-situ micro-nano thinning and cutting on the area where the inclusion of the metallographic sample is located by using a focused ion beam double-beam electron microscope system, and extracting the superfine non-metallic inclusion; and 3) analyzing the ultrafine non-metallic inclusions in the transmission electron microscope sample, and detecting the grain orientation of the ultrafine inclusions by using a transmission-type electron back scattering diffractometer. The method provided by the invention can accurately identify and extract the superfine non-metallic inclusions and the phase composition, components and grain orientation thereof in situ.

The invention relates to a focused ion beam ultrathin section sample preparation pretreatment method for a wafer sample, and belongs to the technical field of wafer material microscopic experiments. The wafer sample preparation pretreatment method provided by the invention comprises the following steps: (1) depositing a metal oxide on the surface of a wafer sample by adopting an atomic layer deposition technology to obtain an ALD layer; (2) coating a curing glue solution on the surface of the ALD layer, and curing to obtain a curing glue layer; and (3) plating a conductive protection layer on the surface of the cured adhesive layer to finish sample preparation pretreatment. The sample preparation pretreatment method disclosed by the invention can well solve the problems of irradiation damage and deformation of a fine structure which is not resistant to electron beam irradiation, curtain effect in a cutting process, unobvious structural boundary in a shooting process and the like in focused ion beam ultrathin section sample preparation, and has good application prospects in the technical field of wafer material microscopic experiments. And the practical value is very high.

A processing system that includes an ion source to direct an ion beam at a workpiece, and an angle measurement system, is disclosed. The angle measurement system includes a current measurement device, such as one or more Faraday sensors, that may be moved in at least two orthogonal directions. The current measurement device scans in a first direction, seeking the largest current measurement. The current measurement device then moves to a second position in the second direction and repeats the scanning procedure. Based on data collected at two different locations in the second direction, the angle of incidence of the incoming ion beam may be determined.

The invention discloses an ion beam polishing method for coupled silicon carbide in-situ growth based on quantum dots, and belongs to the technical field of SiC surface polishing. The preparation method of the SiC material with the quantum dot sacrificial layer grown in situ comprises the following steps: mixing a lead source, a cesium source and a solvent to obtain a CsPbBr3 precursor solution; and dropwise adding the CsPbBr3 precursor solution to the surface of the SiC material, flattening, heating for crystallization, and annealing to obtain the SiC material with the quantum dot sacrificial layer grown in situ. According to the ion beam polishing method based on quantum dot coupling silicon carbide in-situ growth, the quantum dot layer serves as the sacrificial layer of the SiC wafer, the thickness of the sacrificial layer can be effectively reduced, the flatness of the SiC surface can be remarkably improved, and the good fluorescence labeling effect can be achieved. The CsPbBr3 quantum dot prepared by the method has extremely small nano size, can deeply fill micro cracks and micro-nano scratches on the surface of a SiC wafer, is completely coupled with the micro cracks on the surface of the SiC wafer, and realizes accurate filling of defects.

The invention discloses a weak-rigidity free-form surface monocrystalline silicon reflecting lens and a processing method thereof. The method comprises the following steps: obtaining a monocrystalline silicon block; cutting into blocks; diamond wire cutting; precisely grinding the back surface; performing slicing; the free-form surface sucker adsorbs the lens; precisely grinding the front surface into a cylindrical surface; polishing the magnetorheological elastomer; releasing the lens; the cylindrical sucker adsorbs the lens; precisely grinding and thinning the back surface; releasing the lens; cutting edges and carrying out wet etching on the back surface; and carrying out ion beam modification processing to achieve the final surface shape precision of the free-form surface. According to the X-ray reflecting lens machining method, the free-form surface weak-rigidity reflecting mirror is clamped and deformed into the cylindrical surface for machining, the whole process is ultra-precision grinding and polishing of the cylindrical surface, the machining method is simple and mature, the manufacturing cost is extremely low, dependence on an ultra-high-precision multi-axis linkage machine tool is completely eliminated, and the machining precision is greatly improved. And the machining efficiency is greatly improved, and the method is suitable for mass production of reflectors.

In an example, a method includes producing a set of projected sample characterization values associated with each of a plurality of processing axes and identifying a preferred processing axis based on the projected sample characterization values. In another representative example, a method includes extracting a sample specimen, producing a sample image of the sample specimen, identifying a preferred sample tilt angle, and rotating the sample specimen to an orientation corresponding to a preferred sample tilt angle. The method further includes processing the sample specimen to produce a lamella. In another representative example, a system includes a focused ion beam (FIB) system, a sample holder, a stage, and a controller operable to cause the stage to rotate the sample specimen relative to the ion beam axis such that the ion beam approaches the sample specimen along a preferred processing axis.

One ECR ion source generates a He < 2 + > ion beam, the other ECR ion source generates a H2 < + > ion beam, the He < 2 + > or H2 < + > ion beam is selected by a deflection magnet and then transmitted and focused by LEBT to enter an RFQ, the focusing factor of the RFQ is increased and then reduced, DTL is IH-DTL designed by adopting KONUS beam dynamics and comprises two KONUS periods, the working frequencies of the RFQ and the DTL are respectively 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, after He < 2 + > or H2 < + > ion beams are accelerated by RFQ and DTL, the MEBT distributes and transmits the ion beams to a downstream accelerator and an isotope production device. According to the proton helium ion implanter provided by the invention, the particle beam can meet the injection requirement of a subsequent synchrotron, the miniaturization of the proton helium ion implanter is realized, and the production of medical isotopes is considered.

The invention provides an ion beam polishing multi-working-condition removal function obtaining method which comprises the steps that according to a to-be-machined optical surface shape and a planned movement track of an ion source relative surface shape, the change range of an ion beam incident angle and the change range of a machining distance in a polishing machining task are determined; carrying out limited times of single-point etching experiments, and detecting the surface shape of the workpiece after the single-point etching experiments; calculating a processing amount distribution, and calculating a removal function considering the incident angle of the ion beam and the processing distance based on the processing amount distribution data and the processing time; training an artificial neural network by taking the removal function as training data; and on the basis of the trained neural network, obtaining a removal function fitting parameter pair according to the actual processing task requirement, and performing inverse processing on the removal function fitting parameter pair to obtain a removal function of the actual processing point. According to the removal function obtained through the method, the influence under multiple working conditions is considered, and the current high-precision machining requirement for the high surface slope or various non-planar optical surface shapes can be better met.

The invention provides an ion beam energy adaptive regulation and control method and system for FIB equipment, and the method comprises the steps: obtaining an energy distribution parameter of an ion beam in a focusing region, and determining a target energy adjustment range according to the energy distribution parameter and a preset ion beam energy reference model, generating a multi-stage energy adjustment instruction based on the target energy adjustment range, controlling an output parameter of an ion beam energy adjuster through the multi-stage energy adjustment instruction, enabling the current energy distribution of the ion beam to enter the target energy adjustment range, and detecting the energy fluctuation data of the adjusted ion beam on the surface of the sample in real time, and according to the energy fluctuation data and a preset adaptive compensation algorithm, adjusting feedback control parameters of the ion beam energy regulator, so that the energy distribution of the ion beam is maintained within the target energy regulation range. By means of the method, better machining surface quality and process consistency of industrial machining can be achieved.

The invention relates to a high-speed directional molecular flow generating device and application thereof. The device comprises an air supply system, an ion source, a grid electrode assembly, a neutral pore plate and a charged particle swallowing device, the gas supply system is communicated with the gas inlet end of the ion source through a pipeline and provides neutral gas for the ion source; the ion source is used for ionizing the neutral gas into plasma, and the gas outlet end of the ion source is sequentially connected with the grid electrode assembly, the neutral pore plate and the charged particle swallowing device in series; the grid electrode assembly is used for extracting ions, accelerating ions and focusing ions; the neutral pore plate is grounded and is used for enabling passing ion beams to be subjected to an Auger process and converting ions into neutral molecules; and the charged particle swallowing device is used for absorbing unconverted ions and drift electrons. According to the invention, the complexity is low, the generated high-speed oriented molecular flow has good collimation, and an important experimental basis is provided for development and ground calibration of a space vacuum measuring instrument.

Techniques for ribbon beam tuning segment tuning using machine learning are described. A method comprises receiving a set of control parameters representing configurations of multiple tuning segments of a tuning assembly for an ion implanter, predicting a set of process parameters representing one or more metrics associated with a beam property for an ion beam generated by the ion implanter based on the configurations of the multiple tuning segments using a control model, the control model comprising a forward model using a tuning matrix generated from a set of observations and a covariance matrix, and configuring a set of configurations for the multiple tuning segments based on the set of process parameters, the set of configurations for the multiple tuning segments to cause the ion beam to match a target metric for the ion beam. Other embodiments are described and claimed.

The invention belongs to the technical field of plasmas, and particularly relates to a magnetic lens constraint focusing reaction ion beam source which can obtain a focusing ion beam with ion energy in normal distribution and introduce reaction gas to realize rapid removal of a damaged layer on the surface of an optical element. According to the technical scheme, the ion source comprises an anode, an outer cathode arranged above the anode and a center cathode arranged in the middle of the ion source, the anode, the outer cathode and the center cathode are special-shaped circular rings, an ion beam leading-out gap is formed between the outer cathode and the center cathode, an ionization area is arranged among the anode, the outer cathode and the center cathode, and the ionization area is arranged between the anode and the center cathode. An ionization magnetic coil is arranged on the outer side of the anode, a working gas leading-in device is arranged below the center cathode, a magnetic lens center magnetic pole is arranged above the center cathode, a reaction gas leading-out hole is formed in the middle of the magnetic lens center magnetic pole, and reaction gas is led into the magnetic lens center magnetic pole through the center cathode by a gas guide pipe. A magnetic lens coil is arranged on the periphery of the magnetic lens center magnetic pole, and a magnetic lens outer magnetic pole is arranged above the magnetic lens coil.

An ion implantation system includes an ion source, a beamline that extracts and shapes an ion beam from the ion source, a deceleration stage that reduces the energy of the ion beam while focusing the ion beam in the direction of a workpiece. A workpiece support has a structure that determines an implant plane position, which is the position of a workpiece surface that receives the ion beam. The workpiece support is configured to translate the implant plane along a path of the ion beam so as to shorten or lengthen the path without changing the tilt angle of the workpiece. The beam optics may be fixed and the focal point of the ion beam may be allowed to vary with a decel ratio. The workpiece support may translate the implant plane to a focal point of the ion beam or to some fixed offset from that focal point.

The invention relates to the technical field of ion beam polishing equipment, in particular to an ion beam polishing device which comprises a vacuum box, a first polishing mechanism, a second polishing mechanism and a clamping mechanism, an installation space is arranged in the vacuum box, and the second polishing mechanism and the first polishing mechanism are symmetrically arranged in the installation space. The clamping mechanism comprises a clamping assembly and a fixing assembly, the fixing assembly is arranged on the inner bottom face of the vacuum box, the clamping assembly comprises two lifting sleeves, two telescopic rods and two clamps, the lifting sleeves are in sliding connection with the fixing assembly so that the lifting sleeves can be adjusted up and down, the telescopic rods are connected with the lifting sleeves and the clamps, and the clamps are used for fixing the lens. According to the lens double-sided polishing device, double-sided polishing operation of a lens can be completed in a vacuum environment, the number of times of overturning the lens and re-vacuumizing is reduced, so that the polishing efficiency is remarkably improved, the clamping assembly and the fixing assembly are matched with each other, and the stability and repeatability of the whole clamping process are ensured.

The invention relates to the technical field of ion beam tubes, in particular to a titanium alloy lining dipolar iron pipeline treatment method which comprises the steps that a getter film is deposited on the inner wall of a dipolar iron pipeline; the dipolar iron pipeline is installed in an extremely high vacuum system to be subjected to vacuum baking activation; the dipolar iron pipeline is cooled through a low-temperature medium, so that the temperature of the getter film reaches a first set temperature; and continuously introducing a low-temperature medium into the cooling pipeline, and meanwhile, keeping an ion pump of the extremely high vacuum system in a working state until the target ultimate vacuum degree is obtained. According to the scheme, the defects that in the prior art, the vacuum degree of a titanium alloy lining dipolar iron pipeline is reduced in a high-temperature environment and the adsorption capacity of a getter film is reduced are overcome, and the purposes of improving the vacuum degree of the pipeline and enhancing the beam stability are achieved.

Methods and apparatus are disclosed for integration of image-based metrology into a milling workflow. A first ion beam milling operation is performed to an edge at a distance from a final target position on a sample. An SEM image of the sample is used to determine a distance between the milled edge and a reference structure on the sample. Based on the determined distance, the ion beam is adjusted to perform a second milling operation to shift the milled edge to the final target position. Extensions to iterative procedures are disclosed. Various geometric configurations and corrections are disclosed. Manufacturing and analytic applications are disclosed in a variety of fields, including read-write head manufacture and TEM sample preparation. Other combinations of imaging and milling tools can be used.

The invention relates to the technical field of semiconductor manufacturing, in particular to a sample with a pore structure, and provides a thinning method for preparing a pore sample by using a focused ion beam. According to the method, the front face of a target sample is thinned through FIB, then the back face of the target sample is thinned, the problem that in the prior art, a TEM target sheet generated when the front face and the back face of the target sample are thinned alternately is not of a pore internal structure is solved, and the technical effects of the method are that the efficiency of preparing the pore sample can be improved; and the picture shooting quality of the pore structure sample is improved.

The invention discloses a preparation method of an Mg / Al laminated material interface irradiation damage behavior analysis sample, which comprises the following steps: respectively calculating the incidence depths of Mg < + > with different energies in an Mg / Al laminated material by adopting SRI < M > software, and calculating the irradiation damage layer depth of incident ions with specific energy; performing ion beam cutting on the ion irradiation sample according to the SRI M calculation result; sequentially selecting ion beams with different beam sizes to thin the cut interface sample; by adjusting parameters such as the electrolytic polishing solution ratio, the polishing temperature, the polishing time and the polishing voltage, the optimal rapid polishing process parameters of the Mg / Al laminated material interface sample are explored; according to the method, by means of combination of SRI M software simulation, ion beam micro-nano scale processing, a differential thinning process, rapid polishing treatment and the like, preparation of the Mg / Al interface transmission electron microscope sample in the Mg / Al laminated material after ion irradiation can be effectively completed, and Mg / Al interface irradiation damage behavior analysis and rapid screening of the high-performance Mg / A laminated material are achieved.

The invention relates to the technical field of deposition of wear-resistant and corrosion-resistant coating materials on metal surfaces, in particular to a high-toughness CrNbZrNiSiBN high-entropy nitride coating and a preparation method thereof. A bonding layer formed by a Cr layer, a transition layer formed by a CrN layer and a functional layer coated with CrNbZrNiSiBN high-entropy nitride are sequentially arranged on the surface of a base material. And the total thickness of the coated functional layer is 2-10 microns. The method is completed by adopting an ion beam assisted arc ion plating technology, and the prepared composite coating has the advantages of relatively high hardness, relatively good toughness, wear resistance, corrosion resistance, high-temperature oxidation resistance and the like. The coating can be used for strengthening and protecting the surfaces of cutters, molds, aerospace, marine ship parts and the like.

The invention discloses a compact magnetic deflection system for neutral beam injection. The compact magnetic deflection system comprises an iron yoke assembly, two magnet assemblies with the same structure and a magnet protection assembly, the iron yoke assembly is of a rectangular frame structure and forms a complete magnetic loop, the two magnet assemblies are oppositely arranged in the iron yoke assembly, and a channel is reserved between the two magnet assemblies. The magnet protection assembly surrounds the two magnet assemblies; the magnet assembly comprises a magnet exciting coil box, an iron core and an electrified coil, two space grooves are formed in the excitation coil box in a rectangular-ambulatory-plane mode, the iron core is located in the space groove in the inner layer, the electrified coil is located in the space groove in the outer layer, and the head end and the tail end of the electrified coil extend out of the side edge of the excitation coil box in the same direction; charged ions flexibly deflect out of an original beam line channel by changing the current of the electrified coil or the number of turns of the coil. According to the invention, mixed charged ion beams can be effectively filtered out, and purified neutral beam injection is realized.

A gauge that is configured to detect a time at which radiation enters the gauge. The gauge may include a member that is configured to transition from a first state to a second state upon receipt of the incoming radiation, and may include a light probe that is configured to detect when the member transitions to the second state. The gauge may provide for determining a time of arrival of the radiation at another gauge. For example, the gauge may correlate the time of arrival at the gauge with the another gauge, thereby providing for correlating a response time of a test specimen with actual exposure time of the test specimen to radiation (e.g., an ion beam).

The invention provides a blazed grating manufacturing method, which comprises the following steps: providing a substrate, covering the substrate with periodically arranged masks, and etching the substrate by utilizing an incident angle and a rotation angle, taking the masks as a mask and utilizing an ion beam to form a blazed grating. The incident angle is the angle between the first projection of the ion beam on the plane where the normal of the substrate is located and the normal of the substrate, the rotation angle is the angle between the second projection of the ion beam on the plane where the surface of the substrate is located and the tangent line of the surface of the substrate, and the anti-blazing angle of the blazed grating is determined according to the incident angle and the rotation angle. Therefore, the shielding effect of the mask can be reduced by using the incident angle and the rotation angle, so that the purpose of controlling the angle of the anti-blazing angle is achieved, the angle of the anti-blazing angle is controllable, the angle of the anti-blazing angle is increased by controlling the incident angle and the rotation angle, and finally the diffraction efficiency of the blazed grating is improved.

The utility model provides an ion implantation device and a semiconductor structure. Wherein a first adjusting baffle plate and a second adjusting baffle plate are arranged in the ion implantation device, and a through hole is formed under the combination of the first adjusting baffle plate and the second adjusting baffle plate. The size of the through hole can be adjusted in the process of relative movement of the first adjusting baffle and the second adjusting baffle, so that the radial size of the ion beam passing through the through hole can be accurately controlled, a narrow scanning zone can be formed, an injection scanning area can be accurately defined, and the scanning efficiency is improved. Transition regions among different injection scanning regions are prevented from being formed, accurate injection compensation of each region is ensured, and the performance of the semiconductor structure is improved.

The utility model relates to an ion nitriding tool for spherical parts, which belongs to the technical field of ion nitriding and comprises a track part, a drive plate and a motor. An annular track is defined by the track piece; the annular track is used for placing spherical parts; the drive plate is arranged in the cavity and located above the rail piece. A limiting notch is formed in the outer edge of the drive plate and corresponds to the annular rail, and at least part of the spherical part placed on the annular rail is arranged in the limiting notch. A rotating shaft of the motor is connected with the drive plate. According to the ion nitriding tool for the spherical part, the spherical part can move along the annular track in the ion nitriding process, so that ion beams uniformly bombard the surface of the part, traces in contact with the tool are eliminated, and uniform nitriding of the spherical part is realized.