456 results about "Plasma beam" patented technology

A pair of plasma beam sources are connected across an AC power supply to alternatively produce an ion beam for depositing material on a substrate transported past the ion beams. Each plasma beam source includes a discharge cavity having a first width and a nozzle extending outwardly therefrom to emit the ion beam. The aperture or outlet of the nozzle has a second width, which second width is less than the first width. An ionizable gas is introduced to the discharge cavity. At least one electrode connected to the AC power supply, alternatively serving as an anode or a cathode, is capable of supporting at least one magnetron discharge region within the discharge cavity when serving as a cathode electrode. A plurality of magnets generally facing one another, are disposed adjacent each discharge cavity to create a magnetic field null region within the discharge cavity.

A nearly isothermal heat pipe heat sink is provided. The heat sink includes a flat heat pipe connected to one or more flat vapor chambers using a conduit and a heat pipe. The connected flat heat pipe and the flat vapor chambers form a common vapor domain. Fins are attached on the outer surfaces of the flat heat pipe and the flat vapor chambers. Various capillary structures are also provided for fabricating flat heat pipes. A panelized welding process is further provided for fabricating flat heat pipes or flat vapor chambers. The panelized welding process uses either friction stir welding (FSW) or plasma beam welding to transversely join the panels that form the flat heat pipes or the flat vapor chambers.

A method for fabrication of microscopic structures that uses a beam process, such as beam-induced decomposition of a precursor, to deposit a mask in a precise pattern and then a selective, plasma beam is applied, comprising the steps of first creating a protective mask upon surface portions of a substrate using a beam process such as an electron beam, focused ion beam (FIB), or laser process, and secondly etching unmasked substrate portions using a selective plasma beam etch process. Optionally, a third step comprising the removal of the protective mask may be performed with a second, materially oppositely selective plasma beam process.

An electron beam device wherein a low temperature gaseous plasma is generated in a chamber divided by two parallel wire grids. A semiconductor wafer serves as a cathode drawing ions from the plasma to impinge on the wafer, generating secondary electrons that are accelerated toward an anode on the opposite side of the grids where a target resides. In order to have a beam with uniform cross-sectional flux characteristics, the semiconductor wafer is doped with a graded dopant concentration that promotes a uniform beam.

The present disclosure relates to an electrosurgical apparatus to generate a dual plasma stream to perform electrosurgery on a surgical site on a patient. The apparatus and method of the present disclosure generates a hot gas jet to a surgical site by generating two plasma beams that are electrically up to 180 degrees out of phase from each other. Since each beam uses the other beam to establish plasma currents at a load, the combined dual plasma stream can be used on non-conductive surfaces, e.g., a tissue at the surgical site. Furthermore, by applying different flow rates to the plasma beams, various scanning effects by the hot gas jet can be achieved.

Solar cells and other semiconductor devices are fabricated more efficiently and for less cost using an implanted doping fabrication system. A system for implanting a semiconductor substrate includes an ion source (such as a single-species delivery module), an accelerator to generate from the ion source an ion beam having an energy of no more than 150 kV, and a beam director to expose the substrate to the beam. In one embodiment, the ion source is single-species delivery module that includes a single-gas delivery element and a single-ion source. Alternatively, the ion source is a plasma source used to generate a plasma beam. The system is used to fabricate solar cells having lightly doped photo-receptive regions and more highly doped grid lines. This structure reduces the formation of “dead layers” and improves the contact resistance, thereby increasing the efficiency of a solar cell.

A sputter deposition system comprises a vacuum chamber including a vacuum pump for maintaining a vacuum in the vacuum chamber, a gas inlet for supplying process gases to the vacuum chamber, a sputter target and a substrate holder within the vacuum chamber, and a plasma source attached to the vacuum chamber and positioned remotely from the sputter target, the plasma source being configured to form a high density plasma beam extending into the vacuum chamber. The plasma source may include a rectangular cross-section source chamber, an electromagnet, and a radio frequency coil, wherein the rectangular cross-section source chamber and the radio frequency coil are configured to give the high density plasma beam an elongated ovate cross-section. Furthermore, the surface of the sputter target may be configured in a non-planar form to provide uniform plasma energy deposition into the target and/or uniform sputter deposition at the surface of a substrate on the substrate holder. The sputter deposition system may include a plasma spreading system for reshaping the high density plasma beam for complete and uniform coverage of the sputter target.

When a laser beam is irradiated from a laser welding torch onto a surface of a welding target workpiece, a plasma is generated. This plasma is introduced to an optical fiber, extracted by a filter-added half-silvered mirror, branched by half-silvered mirrors and a reflecting mirror, split by a bandpass filter, and detected by an optical sensor. Using a detection result of the optical sensor, a control for keeping the intensity or the temperature of a plasma beam constant is exercised.

The invention provides an outside loop control device and a method for realizing plasma beam focusing in a Hall thruster and relates to a plasma beam focusing technology in the Hall thruster. The device and method solve the problem that the calculation and adjustment are complex and the problem that the controllability is poor in the conventional method for realizing plasma beam focusing in a Hall thruster. The device of the invention comprises an externally powered loop system, an oscillograph, a variable resistor, an adjustable inductance and an adjustable capacitor. The method of the invention includes the following steps of: firstly, starting the Hall thruster and adjusting the Hall thruster to a stable discharge operational state; secondly, starting the oscillograph and adjusting the display scale and the scanning time of the oscillograph so as to clearly display low-frequency oscillation signal on the oscillograph; and finally, adjusting the value of the variable resistor, the adjustable inductance and the adjustable capacitor, keeping the phase-angle difference between the voltage and current fluctuation in the Hall thruster at 180 degrees so as to realize and control the plasma beam focusing in the Hall thruster. The device and the method are suitable for the plasma beam focusing in the Hall thruster.

A method of forming a thermally insulating layer system on a metallic substrate surface is disclosed. The method includes: forming a plasma beam; introducing a coating material in the form of a powder having particles in the range between 1 and 50 μm, carried by a delivery gas into the plasma beam, so as to form a powder beam; defocusing the powder beam by using the plasma beam with a sufficiently high specific enthalpy and by maintaining a process pressure between 50 and 2000 Pa for at least partially melting and vaporizing at least 5% by weight of the powder, so as to form a vapor phase cloud; and forming from the vapor phase cloud onto the metallic substrate surface an insulating layer, being a part of the insulating layer system, having an anisotropic columnar microstructure having elongate particles; wherein the anisotropic columnar microstructure is aligned substantially perpendicular to the metallic substrate surface and low-density transition regions with little material delimit the elongate particles relative to one another.

The invention discloses an induction-cladded gradient hard composite material coating technique, and belongs to the technical field of material surface engineering. The surface of a metal part is pre-coated with a gradient coating, a hard phase and a metal phase of the gradient coating are composited, the pre-coating has element gradient distribution that the content of the hard phase increases gradually from an inner layer to an outer layer, the volume percent of the hard phase ranges from 0% to 90%, the pre-coating is inductively heated and re-melted in a protective atmosphere, and a continuous gradient hard composite material coating, which is combined with the base body interface of the metal part and is compact and flawless, is formed through mutual diffusion of the layers. By the gradient hard composite material pre-coating, the problems such as overhigh heat stress caused by conventional metallurgical bonding of induction-cladded hard coatings, concentrated coating impact heat stress caused by cladding of laser beams, electron beams and plasma beams and base body structure degradation caused by overall coating heating, brazing and sintering of the part are solved; the continuous gradient hard composite material coating meets requirements on high performance such as wear, corrosion and impact resistance of the part.

The invention which belongs to the field of material surface modification relates to a method for plating the inner surface of a long tube through arc ion plating with magnetic field and electric field enhancement. The method is characterized in that: the movement locus of a plasma beam is constrained and controlled by a magnetic field in the process of arc ion plating, two sets of magnetic fieldgeneration apparatuses are arranged in an arc ion plating deposition apparatus, one set is arranged on a plasma transmission channel outside a vacuum chamber, the plasma beam is focused with the magnetic field to constrain the cross section diameter and the transmission efficiency of the plasma beam in transmission, and the other set is arranged on the outer side of a tubular workpiece in the vacuum chamber to guide the plasma beam to diffuse along the axial direction of the center of the tubular workpiece; and electric field enhancement is utilized in the arc ion plating because the electricfield allows the accelerated directional flow of the plasma to be realized, and the electric field enhancement is realized through arranging a pulse electric field in the workpiece. By utilizing the constraint and the control of the magnetic field and the electric field to the plasma beam, a purpose that the plasma deposites the film on the inner surface of the tube is realized, so the method is suitable for plating the inner surface of tubular workpieces which is used as a service surface.

The invention relates to a method for enhancing blade surface of a metal hydraulic turbine runner by combining electrical sparkle deposition and plasma cladding. The method can be used for effectively solving the problems of poor surface hardness, wear resistance, corrosion resistance, shock resistance and the like of a blade of the hydraulic turbine runner and prolonging of the service life of the metal hydraulic turbine runner. The method comprises the following steps: cladding the blade surface of the hydraulic turbine runner with alloy powder by using inoxidizability plasma beams so as to form an alloy coating, and then depositing WC (Wolfram Carbide) ceramic hard alloy by using electrical sparkles on the basis of the plasma cladding coating so as to form an electrical sparkle deposition and plasma cladding combined composite coating. The method is simple and practicable; the formed electrical sparkle deposition and plasma cladding combined composite coating is firmly bonded with a matrix and is large in thickness; a bade is high in hardness, good in compactness and wear-resisting property and long in service life; the composite coating gives play to the advantages of low cost, good wear-resistant anti-corrosion performance, high hardness and strength and excellent wear resistance of iron-nickel alloy.

The invention discloses a porous ceramic membrane material for photo-thermal sea water desalination and a preparation method and application. The preparation method comprises the steps that a porous ceramic membrane foam board is used as a carrier, a nanometer heterostructure layer is synthesized on the carrier through a hydrothermal method, and a porous ceramic heterostructure membrane containingTiO2 on the surface is obtained through further calcination; and the pore diameter of the porous ceramic membrane foam board is 0.1-4.0 [mu]m, and the porosity is 30%-75%. According to the porous ceramic membrane material for the photo-thermal sea water desalination and the preparation method and the application, plasma beam heating control and chemical synthesis are combined, a porous ceramic membrane/nanometer oxide TiO2 heterostructure membrane with a controllable porous structure is prepared, the proportion of a pore forming agent and the technology parameters of plasma beam scanning heating are changed, ceramic foam boards with various porosities and pore diameters are obtained, a gradient structure can be assembled according to actual requirements, and photo-thermal conversion and sea water desalination multifunction application are realized.

A high frequency plasma source includes a support element, on which a magnetic field coil arrangement, a gas distribution system and a unit for extraction of a plasma beam are arranged. Additionally a high frequency matching network is arranged within the plasma source.

The present invention discloses a method for providing at least one biological effect in at least one microorganism. The aforementioned method comprises steps of: (a) providing a system for administering modified plasma; (b) providing a substrate hosting said at least one microorganism; and (c) administering the generated modified plasma beam in a predetermined pulsed manner to said substrate hosting said at least one microorganism to provide said at least one biological effect to said at least one microorganism. The present invention further provides a system thereof.

A method of depositing a layer of a coating material (e.g., DLC protective overcoats of magnetic and magneto-optical recording media) on a surface of a substrate/workpiece, the layer including relatively thin and relatively thick regions defining a thickness gradient at a boundary therebetween, comprising steps of: (a) providing a filtered cathodic arc deposition (FCAD) process/treatment chamber comprising a FCAD source including means for providing a focused plasma beam containing ions of a coating material and means for scanning the plasma beam over a substrate/workpiece surface; (b) providing the process/treatment chamber with a substrate/workpiece including a surface for deposition thereon; and (c) forming on the surface a layer of coating material including the relatively thin and relatively thick regions defining the thickness gradient at the boundary therebetween by scanning the plasma beam over at least a portion of the surface.

The invention discloses a method for conducting low-temperature efficient rapid ion nitriding on the surfaces of a steel workpiece. The method includes the steps that a metal cleaning agent is adopted to remove oil stains on the surface of the workpiece, the pretreated workpiece is fixed to a workpiece rack, a door of a vacuum chamber is closed, and the workpiece rack is started to rotate; the vacuum chamber is pumped until the background vacuum is lower than 1*10<-2> Pa; an assisting heating device is started, the vacuum chamber containing the workpiece is heated to the temperature of 150-200 DEG C; argon is introduced in, a plasma beam is obtained through a hollow cathode ion source, the furnace wall of the vacuum chamber is an anode, and the workpiece rack is a cathode; working gas is introduced, and direct-current bias voltage of 600-800 V is applied to the workpiece; high-ionization-rate plasma containing the working gas is obtained, and the whole test sample is covered with the plasma; and the thickness of a nitriding layer is controlled. The growth rate of the nitriding layer can reach 30-50 micrometers per hour.

The invention is concerned with the method that can locate the focusing ion beam to repair the location accurately, it is: locates the aiming area by the optics transmission microscope coordinating with the laser mark, the optics transmission microscope can show the circuitry structure directly by penetrating passive layer, the traditional method uses focusing ion beam imaging that can only show the outer layer situation of the sample, so the invention can locate the repair position of the focusing ion beam. The invention is: the laser energy of mark on the dope is lower that cannot damage the material of the sample. Moreover, the dope can be chemical reagent, such as acetone, that can be easy to scour off and daub times without number, and cannot affect the following steps.