9 results about "Plasma beam" patented technology

The utility model discloses a kind of plasma cleaning plate, including bottom plate, bottom plate is provided with cathode, the surface of bottom plate is opened with at least one cathode groove, cathode groove is U shape, by the cathode groove design is U-shaped curved surface, the contact area of cathode and anode is significantly increased 30%-50%, current density distribution is optimized, make ionization area more concentrated and uniform, greatly improve the energy density of plasma arc and atmosphere dissociation degree, and, plasma can be maintained in lower temperature state in generation and effect process, unnecessary heat loss is reduced, to realize the effect of energy saving, at least one row of array distribution's plasma cleaning hole is equipped in cathode groove, and staggered distribution design is adopted, so that plasma beam is ejected at different angles and positions, form interlaced covering jet field, not only significantly improve cleaning efficiency, make cleaning process more efficient, can also ensure that cleaning has no dead angle, more comprehensive.

This invention discloses a burner head and electric flame stove capable of automatically switching between long and short arcs, including a burner head top shell, a burner head bottom shell, a cathode nozzle, a ceramic tube, an anode needle, an adjustable speed air intake device, and a circuit board. The inner wall of the cathode nozzle adopts a multi-segment conical surface superposition structure, which can disperse the radial tension of the electric field, making the electric field lines more concentrated in the axial direction and effectively forming a rigid plasma beam; the bottom of the multi-segment conical surface provides a smooth transition channel for airflow and suppresses shock wave generation; the bottom of the anode needle is provided with a funnel-shaped mounting groove, and the spring guide needle elastically abuts against the mounting groove. The funnel-shaped structure has an automatic centering function, which can achieve reliable contact between the spring guide needle and the anode needle without precise calibration, ensuring the stability of the electrical connection. For high-power electric flame stoves with hundreds of electrode needles, this structure can greatly simplify the installation process, improve installation efficiency, and reduce the installation failure rate.

The present invention discloses a method for depositing a tantalum carbide composite coating, comprising five steps: S1: generating a powder composition signal; S2: based on the powder composition signal, pre-depositing a tantalum carbide transition layer on the substrate surface and curing it through heat treatment to form a transition layer interface signal; S3: based on the transition layer interface signal, activating a three-layer combined atmosphere protection system comprising overall cavity atmosphere protection, flame annular gas curtain protection, and substrate back cooling protection, generating an oxygen concentration monitoring signal and a protective gas flow control signal, and simultaneously generating a coating thickness signal; S4: based on the coating thickness signal, switching the thermal spraying gun to a low-power plasma beam mode to form a densified coating signal; S5: changing the proportion of carbon powder in the composite powder, repeating steps S3 and S4 at least once, and outputting the final coating signal. The tantalum carbide composite coating deposition method of the present invention can solve the problems of low bonding strength, easy oxidation, and high porosity of existing thermally sprayed tantalum carbide coatings.

An apparatus and method for cold plasma skin resurfacing is provided. In one aspect, a mask for use in fractionated skin resurfacing is provided. The mask includes a plurality of apertures distributed across a surface of the mask. The mask may be made of a flexible material including an adhesive surface, such that the mask may be applied to a contoured surface of a patient's skin while remaining fixed in place. The material is resistant to the effects of a cold plasma beam. In this way, a cold plasma beam applicator may be used to scan or apply a cold plasma beam over a surface of the mask, such that only the portions of a patient's skin exposed by the apertures of the mask are treated by the cold plasma beam.

This invention provides a method for manufacturing a semiconductor device. After forming a trench exposing the apex corner of the active region for forming a gate oxide layer by creating a side-hole device isolation structure, the apex corner of the active region exposed by the trench is first rounded by controlling the direction of the plasma beam to form a first angle with the top surface of the substrate. Then, the top surface of the active region is smoothed by controlling the direction of the plasma beam to form a second angle (the second angle is smaller than the first angle) with the top surface of the substrate. This improves the uniformity of the growth rate and thickness of the gate oxide layer during subsequent in-situ growth on the active region, increases the thickness at the edge of the gate oxide layer, and improves the sharp corner problem during gate oxide layer manufacturing. This improves the breakdown voltage of the device and ensures the stability of the device performance.

The application provides a method for preparing a metal truss structure by using a high-energy beam 3D printing, which comprises the following steps: S10. The free end of a wire material with a wire diameter of 0.8mm-4mm is pulled to a first target welding point on a base material, a focal point of a laser beam with a power of not more than 2000W is aligned with the first target welding point for spot welding, so that one end of the wire material is welded on the base material, and the exposure time of the laser beam is 0.04s-0.4s; S20. The wire material is pulled towards a second target welding point on the base material, so that the wire material is in contact with the second target welding point on the base material, and the wire material is welded on the base material at the second target welding point in the welding mode of the wire material welded at the first target welding point; and S30. The wire material is cut off by using a single-pulse laser with a duration of 1ms-10ms or a multi-pulse laser with an action time of 10-100 pulse periods and a peak power of 200w-2000w at the second target welding point. The application has the beneficial effects of high production efficiency, low cost, and the combination of the laser beam and the plasma beam used alone or in combination, and is more flexible.

The application belongs to the field of micro-nano processing technology, and particularly relates to a mask-free plasma patterning method and device for carbon nanotube film. The method comprises the following steps: fixing a substrate carrying the carbon nanotube film on a controllable two-dimensional motion platform; introducing oxygen-containing working gas into a plasma jet head and exciting to generate a stable plasma beam current; generating a scanning path program according to a preset pattern; controlling the substrate to move under the plasma beam current according to the program, so that the carbon nanotubes in the target area are selectively oxidized and removed to form a pattern. Through the synergistic effect of the plasma beam current and the controllable two-dimensional motion platform, selective oxidation etching of the carbon nanotube film is realized. The method does not need a mask and a wet chemical step, and through controlling the plasma power, the jet-sample distance and the scanning speed within a specific range, the patterning can be realized on rigid and flexible polymer substrates, and the heat input in the process can be effectively controlled.

This invention discloses a plasma light source device, relating to the field of optical equipment technology. The light-emitting center of the plasma generator is located within a non-focal tolerance region, which surrounds a first focal point. An ellipsoidal receiver is configured to reflect laser light towards the plasma generator and to reflect the plasma beam to form a reflected beam converging towards a second focal point. A first shaping component is located downstream of the second focal point and configured to shape the reflected beam. Thus, by placing the light-emitting center of the plasma generator within a non-focal tolerance region surrounding the first focal point and placing the first shaping component downstream of the second focal point, the second focal point can be prevented from being the final light-emitting end. Furthermore, the first shaping component can redistribute energy and perform numerical aperture shaping on the reflected beam, thereby reducing the impact of plasma position drift on the output light and improving the stability of the plasma light source device's output.

The application discloses a kind of embedded electromagnetic shielding metal mesh production method, comprising the following steps: making reverse mask on optical substrate;Plasma beam etching metal mesh groove;Metal thin film plating;Bottom film plating;Gel removal and cleaning;Environmental erosion resistance optical antireflection coating plating.The application makes the groove of metal mesh on the surface of optical substrate by mask production, plasma beam etching and other ways, fills metal mesh in the groove by vacuum plating, and then covers with the same film material as substrate material or, forms a whole with substrate, completely wraps metal mesh inside, and covers with optical antireflection coating with protective layer on the surface, so that optical window can realize electromagnetic shielding, optical good transmittance, environmental erosion resistance and other functions.