Method for focus plasma beam mending with precisivelly positioning

Abstract

The invention is concerned with the method that can locate the focusing ion beam to repair the location accurately, it is: locates the aiming area by the optics transmission microscope coordinating with the laser mark, the optics transmission microscope can show the circuitry structure directly by penetrating passive layer, the traditional method uses focusing ion beam imaging that can only show the outer layer situation of the sample, so the invention can locate the repair position of the focusing ion beam. The invention is: the laser energy of mark on the dope is lower that cannot damage the material of the sample. Moreover, the dope can be chemical reagent, such as acetone, that can be easy to scour off and daub times without number, and cannot affect the following steps.

Description

technical field

[0001] The invention relates to a method for repairing circuits in integrated circuits in a semiconductor manufacturing process, in particular to a method for precise positioning when repairing circuits with focused ion beams. Background technique

[0002] Usually, after the design of an integrated circuit is completed, before mass production, it will be taped out in small batches to see whether the design can meet the expected requirements after actual production (sometimes, the results simulated by the design software are no problem, not equal to the actual There is no problem after production). If it can't be achieved, some corresponding modifications will be made to the design circuit, and then re-striped. But because every tape-out basically needs to re-engrav a set of masks, both in terms of cost and time, it is costly, so sometimes, the designer will choose to use the focused ion beam (FIB) to do some circuit repairs Actions. That is, through precis...

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