207 results about "Reactive-ion etching" patented technology

The invention relates to the field of microelectronic manufacturing, and discloses a high-performance monocrystalline silicon nano wafer manufacturing process which comprises the following steps: preparing a monocrystalline silicon wafer, and obtaining a high-quality monocrystalline silicon wafer through fine cutting, chemical mechanical polishing and surface residual stress elimination treatment; multi-stage cleaning and surface treatment are carried out, and surface pollutants are removed through combination of molecular chromatography, electric field assisted ultrasonic cleaning and low-temperature plasma cleaning; and manufacturing a nano structure, and forming a complex nano structure by adopting multi-stage electron beam lithography, segmented reactive ion etching and self-adaptive deep etching regulation and control. The surface quality, the mechanical strength and the electrical property of the wafer are remarkably improved through the technologies of refined monocrystalline silicon wafer preparation, multi-stage cleaning, advanced nanostructure manufacturing, self-adaptive heat treatment and the like; and through surface functionalization and multi-layer high-precision packaging, the environmental tolerance and long-term reliability of the nanostructure are enhanced.

The invention relates to the field of optical lens coatings, and particularly discloses a preparation method of an antifouling and antibacterial spectacle lens coating. The preparation method of the antifouling and antibacterial spectacle lens coating comprises the following steps: depositing a silicon dioxide substrate on the surface of a lens through plasma enhanced chemical vapor deposition treatment; the preparation method comprises the following steps: dispersing nano-graphene and nano-silver particles in an ethanol solvent, adding a silane coupling agent to form a homogeneous suspension, loading the suspension on the surface of a silicon dioxide substrate through a spin-coating method, and carrying out heat treatment curing to form an antibacterial layer, with the loading amount of nano-silver being less than or equal to 0.5 wt%; and etching the surface of the antibacterial layer by adopting a reactive ion etching method, and then grafting perfluorooctyltriethoxysilane on the etched surface at 80-100 DEG C by adopting a vapor deposition method to form the hydrophobic layer. The preparation method of the antifouling and antibacterial spectacle lens coating has the advantages of being antibacterial, antifouling and high in durability.

The invention provides a TEM sample and a preparation method and application thereof.According to the preparation method of the TEM sample, on the premise that the hole structure of a semiconductor device is not affected, part of residual polymer accumulated and blocked in a hole opening in the semiconductor device is removed through reactive ion etching, so that the hole opening is expanded and not blocked any more; a protective colloid can enter a pore structure for filling and precursor material plating of atomic layer deposition is facilitated, the definition of the side wall of the pore is enhanced, and the quality and the final observation effect of the TEM sample are effectively improved; the equipment and technology adopted by the preparation method of the TEM sample provided by the invention are low in investment, and the operation process is simpler and faster than that of a Fab etching process; meanwhile, batch laboratory-scale sample treatment can also be realized; in addition, compared with a wet chemical corrosion cleaning technology for removing residual polymers, the problems of chemical reagent residues, chemical reactant pollution and the like at the bottom of the deep hole structure are avoided.

The invention discloses an amorphous tungsten superconducting nanowire single-photon detector, which comprises a photosensitive component, and is characterized in that the photosensitive component is an amorphous tungsten superconducting nanowire; the amorphous tungsten superconducting nanowire is prepared by the following steps: (1) growing an amorphous tungsten film on a substrate; and (2) etching the amorphous tungsten film into a roundabout nanowire structure by using electron beam exposure and reactive ion etching methods to obtain the amorphous tungsten superconducting nanowire. According to the invention, the tungsten nanowire with good stability is used as the main body material of the SNSPD, so that the robustness of the SNSPD preparation process is improved, and the service life of the SNSPD device in practical application is prolonged.

The invention relates to a method for transferring a wafer-size two-dimensional semiconductor film through a selenium-assisted dry method, and belongs to the technical field of semiconductors. The method comprises the following steps: sequentially preparing a Se nano layer, a supporting layer and a water-soluble glue layer on a two-dimensional semiconductor film wafer containing a growth substrate; stripping the two-dimensional semiconductor film, the Se nano layer and the supporting layer from the growth substrate together by using a water-soluble glue layer, and then adhering the two-dimensional semiconductor film to a target substrate by taking the two-dimensional semiconductor film as an adhering surface; soaking in water to remove the water-soluble adhesive layer; and removing the support layer through reactive ion etching, and finally performing annealing treatment in an inert gas atmosphere to remove the Se nano layer, thereby obtaining the two-dimensional semiconductor film on the target substrate, and completing the transfer of the two-dimensional semiconductor film from the growth substrate to the target substrate. According to the invention, the wrinkle-free, residue-free and pollution-free high-quality complete cleaning transfer of the wafer-size two-dimensional semiconductor film can be effectively realized.

The invention belongs to the field of micro-nano structures, and relates to a preparation method of a nano needle tip split ring 3D structure periodic array. According to the method, after a reflecting layer and a supporting layer are deposited on a silicon substrate, polystyrene nanospheres are self-assembled, the volume of the nanospheres is reduced through reactive ion etching, then two times of inclined magnetron sputtering are carried out, deposited precious metal is etched through a reactive ion etching machine, and the silicon substrate is obtained. And removing the nanosphere mask to obtain the 3D structure periodic array of the nanotip split ring. The method has the characteristics of simple preparation process, good uniformity, high order degree and strong repeatability, and has wide application potential in the fields of SERS (Surface Enhanced Raman Scattering), photoelectric property detection and the like.

The invention relates to a flexible conductive thin film, a preparation method thereof and a flexible pressure sensor. The preparation method comprises the following steps: providing a flexible conductive thin film with hydrophilicity and crystal orientation of lt; 100 gt; the device comprises a silicon substrate, a flexible conductive mixed solution, a mixed solution containing at least two kinds of first colloidal microspheres with different diameters, and a mixed solution containing second colloidal microspheres with a single diameter, placing a mixed solution containing at least two kinds of first colloidal microspheres with different diameters on a silicon substrate for self-assembly, reactive ion etching, magnetron sputtering and wet etching to obtain a first pyramid microstructure silicon template; placing a mixed solution containing second colloidal microspheres with a single diameter in the first pyramid microstructure silicon template for self-assembly, reactive ion etching, magnetron sputtering and wet etching to obtain a multi-level pyramid microstructure silicon template; the flexible conductive mixed solution is placed in the multi-level pyramid microstructure silicon template to obtain the flexible conductive film, so that the sensitivity of the flexible pressure sensor can be improved, and the detection range and the reliability can be improved.

The invention discloses an SERS (Surface Enhanced Raman Scattering) detection platform for detecting gastric cancer biomarkers, and belongs to the technical field of materials. Comprising the following steps: (1) sequentially carrying out reactive ion etching and physical etching on a single-layer polystyrene microsphere (PS microsphere) colloid template to obtain a pure Si nano crown array SiNCA; (2) depositing gold nanoparticles on the surface of the SiNCA to obtain a gold-plated silicon nano crown array Au / SiNCA; and (3) adding a signal molecule 3-MPBA into the Au / SiNCA, and incubating, so as to obtain the SERS detection substrate material 3-MPBA (at) Au / SiNCA. The SERS microporous array chip prepared by the invention has the advantages of high sensitivity, strong specificity, simplicity in operation, high flux and the like.

The invention discloses a nano-diamond array preparation and miRNA ultra-sensitive detection method, and the nano-diamond array preparation comprises the following steps: self-assembling densely arranged single-layer polystyrene (PS) microsphere templates on a silicon wafer plated with a gold film, and thinning the particle size of PS microspheres by adopting a reactive ion etching process to obtain non-densely arranged PS microsphere templates; carrying out thermal evaporation on an aluminum film and ultrasonically removing the PS microspheres to obtain a micropore array; then modifying the surface of the nano-diamond containing the NV color center with a single-chain DNA probe, and self-assembling the diamond modified by the DNA probe to the nano-pore array through a gold-sulfur bond; the miRNA detection comprises the following steps: firstly, preparing a target miRNA coupled probe magnetic sphere, dropwise adding the target miRNA coupled probe magnetic sphere to the nano-diamond array, then scanning the target miRNA coupled probe magnetic sphere on the surface of the nano-diamond array through the scanning system, the microwave module and the optical path system, and collecting an optical detection magnetic resonance spectrum. The invention is expected to be applied to the field of early diagnosis of cancers.

The invention belongs to the field of micro-nano structures, and relates to a preparation method of a single-layer disc 3D structure based on nano needle tip support. According to the method, the single-layer disc 3D structure supported by the nanometer needle tip is obtained through an electron beam thermal evaporation system, a self-assembly technology and reactive ion etching, the preparation process is simple, cost is low, repeatability is good, structural stability is good, and tolerance is high. Compared with a metasurface supported by a silicon substrate, the metasurface provided by the invention has the advantages that the transient signal oscillation modulation capability of the metasurface is greatly improved by the needle point support, the opto-mechanical conversion efficiency and the oscillation quality are remarkably improved, and the quality factor is improved by several orders of magnitude compared with that of a common silicon substrate.

The invention discloses a manufacturing and temperature compensation method of a Pirani vacuum gauge compatible with a CMOS, and relates to the field of Pirani vacuum gauges, and the manufacturing method comprises the steps: sequentially depositing a first layer of silicon dioxide, a polycrystalline silicon sacrificial layer, a second layer of silicon dioxide, a polycrystalline silicon thermistor part, a third layer of silicon dioxide and an aluminum layer on a silicon substrate; the aluminum layer is used for forming a lead and a bonding pad; silicon dioxide is selectively removed through reactive ion etching, and the polycrystalline silicon sacrificial layer or the silicon substrate needing to be etched is exposed; etching the polycrystalline silicon sacrificial layer by adopting an isotropic etching technology to obtain a T-shaped device structure; or etching the silicon substrate by adopting a deep silicon etching technology and an isotropic etching technology to obtain an L-shaped device structure. According to the invention, two kinds of Pirani vacuum gauges compatible with CMOS can be manufactured; and meanwhile, through the temperature compensation method, the influence on the output performance can be specifically analyzed based on the environment temperature.

The invention relates to the technical field of optical devices, and particularly discloses a preparation method of an electrostatic drive MEMS Fabry-Perot filter, an SOI wafer is used as a first substrate, top silicon of the SOI wafer is used as a drive structure of the MEMS Fabry-Perot filter, the thickness and mechanical characteristics of a cantilever can be accurately adjusted, and the MEMS Fabry-Perot filter can be manufactured. And meanwhile, the silicon dioxide insulating layer of the SOI wafer can also be used as an etching stopping layer, so that the condition of excessive etching is avoided, and the manufacturing yield of the filter is further improved. When the bonding layer and the silicon dioxide insulating layer of the SOI wafer are etched, an etching method combining advanced oxide etching and reactive ion etching is adopted, isotropy and anisotropy are integrated, and the limitation of a single process is overcome. A certain dislocation amount of linear offset is reserved during patterning of bonding metal, gold-tin eutectic bonding is adopted, the problem of leading-out of top and bottom electrodes is solved, and the machining cost and uncertainty are reduced.

The invention relates to the field of Micro-LEDs, in particular to a method for deep etching of a GaN segmented pixel array of a Micro-LED device with a vertical structure, which comprises the following steps: bonding a GaN epitaxial layer with an IC (integrated circuit) driving circuit wafer, grinding and polishing, then removing a silicon substrate by a wet method, etching the GaN epitaxial layer by a reactive ion etching technology, and finally etching the GaN epitaxial layer to form the GaN segmented pixel array of the Micro-LED device with the vertical structure. And preparing a passivation film on the surface of the GaN epitaxial layer by adopting a passivation technology, etching the GaN epitaxial layer covering the mask layer by adopting an inductively coupled plasma etching technology, and finally etching the bonding metal by adopting a plasma beam etching technology. According to the method, GaN deep etching is achieved while the high-quality mask silicon dioxide material is prepared, and meanwhile serious side wall damage to GaN can be avoided.

The invention discloses a gallium oxide-based Schottky barrier diode and a preparation method thereof. The method comprises the following steps: preparing a gallium oxide substrate; performing oxygen plasma treatment in a reactive ion etching system; feeding the sample into a tubular furnace, and annealing in an air atmosphere; then sending the annealed sample into electron beam evaporation equipment for back metal silver electrode growth; next, the sample is sent into rapid thermal annealing equipment to be annealed in the N2 atmosphere, and ohmic contact is formed; then, under the conditions that the growth speed is 0.01-0.1 nm / s and the vacuum degree is lower than 1 * 10 <-4 > Pa, field plate oxide Al2O3 grows on the surface treatment acting layer of the substrate through electron beam evaporation; and finally growing a metal anode at the top of the device by electron beam evaporation equipment. According to the technical scheme provided by the invention, the problem of preparing the gallium oxide-based Schottky barrier diode with low forward conduction loss under the condition of maintaining high breakdown voltage of the device is solved.

The invention belongs to the technical field of microstructures, and discloses a preparation method and application of an ALD modified nano microstructure film, and the method comprises the following steps: adopting a magnetron sputtering method to form an Ag atomic layer on the surface of a PTFE film as an etching mask plate; blowing plasma over the surface of the mask plate by adopting an ICP reactive ion etching method to form a nanorod morphology; a first precursor Al2 (CH3) 3 and a second precursor H2O are alternately used, chemical adsorption and reaction are carried out on the surface of the obtained PTFE, an AlOx insulating layer is formed, the range of x is 1-2, and finally the ALD modified nanometer microstructure film is obtained. The film prepared through the method has a microstructure, distribution of electrons at the tip of the microstructure enables the effective area of charges on the same plane to be reduced, and the performance of the ALD modified nanometer microstructure film is improved. The relative polarization field intensity is reduced, and the performance of the friction nanometer generator is enhanced.

The invention provides an infrared detector deep mesa etching process based on three layers of masks and an infrared detector, and belongs to the field of infrared detector mesa etching. The process comprises the following steps: spin-coating a stress buffer layer on the surface of a superlattice epitaxial layer, and curing and forming; depositing a hard mask serving as an etching barrier layer; depositing an inorganic oxide; spin-coating photoresist to form a composite patterned top layer, and then forming a mesa pattern through a photoetching process; taking the mesa pattern as a mask, and transferring the mesa pattern to the hard mask through reactive ion etching; etching the stress buffer layer by adopting plasma until the surface of the superlattice epitaxial layer is exposed; the three layers of masks are used as blocking, deep etching is carried out through inductively coupled plasma, and the etching depth is 5.6-6 microns; a post-processing step; according to the process provided by the invention, high-quality and high-aspect-ratio mesa etching can be realized on the premise of not introducing extra pollution and remarkably increasing the cost, and the process is suitable for preparing a deep-mesa and high-aspect-ratio device.

The utility model discloses a special quartz combined outer ring for a semiconductor etching process, which relates to the technical field of integrated circuit manufacturing, and comprises a reactive ion etching machine, an embedding groove is arranged in the quartz ring, a reinforcing groove is arranged on the surface of the top end of a bump, and the reinforcing groove is arranged in the embedding groove. And a slot is formed in the clamping column. The quartz rings, the embedding grooves, the reinforcing grooves and the inserting grooves are matched with one another, the quartz rings can be more stably combined together due to the existence of the embedding grooves, the assembly accuracy and stability are ensured, the firmness of connection is further enhanced due to the design of the reinforcing grooves and the clamping columns, vibration and impact of external force on the quartz rings are effectively relieved, and the service life of the quartz rings is prolonged. Therefore, the durability and the stability of mechanical parts are improved, the assembly difficulty caused by errors is reduced, the influence of human factors on product assembly is reduced, damaged parts can be quickly disassembled and replaced, and the maintenance time is saved.

The invention discloses a preparation method of a superconducting nanowire single-photon detector capable of keeping high detection efficiency in a liquid helium temperature region. The preparation method comprises the following steps: adopting a double-layer substrate formed by silicon oxide and silicon; the method comprises the following steps: growing a niobium nitride film on a silicon oxide surface of a substrate through radio frequency magnetron sputtering to serve as a buffer layer, growing a niobium nitride film through direct current magnetron sputtering, and accurately measuring and controlling the thickness through XRR; the method comprises the following steps: preparing a double-line parallel nanowire structure in a manner of exposing PMMA A4 electron beam glue by electron beams, and transferring a nanowire pattern to a niobium nitride film in a reactive ion etching manner; the method comprises the following steps of: removing photoresist above a region needing to be etched on a silicon oxide surface of a substrate in a manner of exposing the AZ4620 photoresist through ultraviolet laser direct writing, and then etching silicon oxide and silicon from the silicon oxide surface of a device through reactive ion etching to prepare a suspension bridge structure. The high detection efficiency of the device is ensured while the working temperature of the device is greatly improved.

The invention discloses a manufacturing method of a resonant beam type pressure sensor, which belongs to the technical field of micro electro mechanical systems and comprises the following steps of: adopting an SOI (Silicon On Insulator) silicon wafer, and processing a central deep groove and an annular deep groove on the back surface of a substrate silicon layer by utilizing anisotropic dry etching to form a pressure sensing diaphragm and a boundary region; bonding the bottom surface of the boundary area on the base; forming a resonant beam and a clamped region on the device layer by using anisotropic etching; etching through the annular deep groove by using a plasma deep silicon etching process; silicon dioxide at the bottom of the beam is removed through reactive ion etching, and a suspended beam structure and a supporting column are obtained.

A method for preparing a diamond film with high NV color center strength through MPCVD is characterized in that a nitrogen-doped micron diamond film is deposited on a substrate through MPCVD, a reactive ion etching technology is used for conducting surface modification on the diamond film, structural conditions are improved for the high NV color center strength, vacancies are fully diffused through high-temperature annealing, and the diamond film with the high NV color center strength is obtained. Therefore, the diamond film with high NV color center strength is prepared. The problems that the NV color center diamond film prepared by the MPCVD method is low in color center strength and poor in optical performance are solved, and the NV color center fluorescence intensity and the color center application value of the MPCVD diamond film are improved.

A method for etching a substrate includes pulsing an RF power at a given frequency to generate a plasma for etching the substrate where each pulse period has an ON-state and an OFF-state comprising a duty cycle, selecting an ON-state duration of the duty cycle based on, at least in part, a first duration for restriking the plasma, a second duration for a minimum on-time per a given RF power source providing the RF power, and a third duration for the plasma to reach a steady state, selecting an OFF- state duration of the duty cycle for each pulse period to alter a profile loading, a iso-dense depth loading, or a critical dimension (CD) loading etching effect associated with a feature to be formed on the substrate, and forming the feature by using the duty cycle for the RF power to etch the substrate.

The invention belongs to the technical field of electronic packaging and printed circuit boards, and particularly relates to a method for improving the bending resistance of a flexible circuit board, which comprises the following steps: after plasma pretreatment is carried out on the surface of a polyimide substrate, a three-dimensional nano-column array structure is constructed by depositing gold nanoparticles as a mask and combining reactive ion etching; then removing the mask to obtain a clean polyimide nano structure; and depositing a titanium / copper seed crystal layer through magnetron sputtering, and realizing conformal filling and coating of the copper conductive layer on the nano structure by adopting pulse reverse electroplating to form an adhesive-free mechanical interlocking interface. An adhesive-free three-dimensional mechanical interlocking structure is used for replacing an adhesive layer which is weak in physical performance and prone to fatigue failure, and the structural weak link that a traditional flexible circuit board is layered and cracked first under dynamic bending stress is thoroughly removed.

The utility model discloses waste gas treatment equipment for a reactive ion etching machine and belongs to the field of etching machines. An air inlet and an air outlet are formed in the side surface of the shell; an induced draft fan is arranged on the air inlet; the interior of the shell is fixedly connected with an isolation box; a through hole communicated with the isolation box is formed in the side surface of the shell; the top end of the side face of the isolation box is fixedly connected with a partition plate I. The other end of the partition plate I is fixedly connected to the inner wall of the shell. An air inlet is formed in the center of the top end of the isolation box, an air outlet I is formed in the center of the bottom end of the isolation box, and air outlets II are formed in the two sides of the air outlet; the partition plate II is provided with a through hole I. The top end of the side face of the isolation box is provided with a through hole II. The air outlet I is communicated with the through hole I through a pipe; a plurality of rows of sealing plates perpendicular to the penetrating holes are fixedly connected into the isolation box. And a pumping box is arranged in the isolation box. According to the utility model, not only is the filter material convenient to replace, but also the waste gas can be filtered twice when being purified, so that the purified waste gas is ensured to meet the standard.

This invention relates to a GaN-based pn junction diode device with a polarized beveled termination structure and its fabrication method. The device includes a cathode, a GaN substrate, an epitaxial layer, and an anode. The epitaxial layer comprises a lightly doped n-type GaN layer, an intrinsic GaN layer, and a p-type doped GaN layer grown in a single epitaxial growth process. The anode ohmic contact metal is placed on the p-type doped GaN layer, and the cathode ohmic contact metal is placed on the back side of the GaN substrate. It also includes a polarized beveled termination structure formed at the interface containing the pn junction, using inductively coupled plasma reactive ion etching (ICP-R) and a photoresist mask. The photoresist mask is formed using thick photoresist, followed by high-temperature heating and annealing to form the reflow morphology of the photoresist. Finally, wet repair and a passivation layer are applied to suppress the beveled n-type donor surface states of the polarized beveled termination structure. This invention effectively alleviates the boundary electric field concentration problem of GaN-based pn junctions and improves the breakdown voltage of GaN-based pn junctions.

A method tests the stress robustness of a semiconductor substrate. The method includes: forming a nitride layer on a surface of the semiconductor substrate, the nitride layer being directly deposited on the surface of the semiconductor substrate or on a native oxide layer that is interposed on the surface; cooling the semiconductor substrate and the nitride layer; patterning the nitride layer into a patterned nitride by photolithography including a step of reactive ion etching with ions produced from a gas, which includes hydrogen or a hydrogen compound or both; processing the patterned nitride and the semiconductor substrate at a temperature of not less than 800° C. and not more than 1300° C. in a nitrogen atmosphere to induce the formation of dislocations at an interface between the patterned nitride and the semiconductor substrate; and evaluating at least one property that is related to the formed dislocations.

The application provides an infrared detector deep mesa etching process based on a three-layer mask and an infrared detector, and belongs to the field of infrared detector mesa etching. The process comprises the following steps: spin-coating a stress buffer layer on the surface of a superlattice epitaxial layer and curing the stress buffer layer; depositing a hard mask as an etching barrier layer; depositing an inorganic oxide; spin-coating a photoresist to form a composite patterned top layer, and then forming a mesa pattern through a photolithography process; taking the mesa pattern as a mask, transferring the mesa pattern to the hard mask through reactive ion etching; etching the stress buffer layer by using plasma until the surface of the superlattice epitaxial layer is exposed; taking the three-layer mask as a barrier, performing deep etching by using inductively coupled plasma, and the etching depth is 5.6-6 microns; and performing a post-processing step. The process of the application can realize high-quality and high-aspect-ratio mesa etching without introducing additional pollution and significant cost increase, and is suitable for the preparation of deep mesa and high-aspect-ratio devices.

The present invention discloses an etching method for an MRAM magnetic tunnel junction, comprising: Step 1, a main etching step with an etching amount of t1 is carried out by using ion beam etching and / or reactive ion etching: the direction angle of the ion beam is 10° to 60°, and the bias voltage of the reactive ion etching is 400 - 1000 V; Step 2, a cleaning step with an etching amount of t2: the bias voltage of the reactive ion etching used is 50 V - 400 V, and the pulse duty ratio is 5% - 50%. t1:t2 ≥ 0.5. After the cleaning step is completed, the etching morphology on the bottom electrode or the bottom dielectric layer is a square groove; Step 3, in-situ protection: a film is deposited for in-situ protection. The present invention combines RIE and IBE etching. Through the arrangement of the etching sequence and the selection of the etching parameters, while significantly improving the etching effect of small-size dense magnetic tunnel junctions, it is also applicable to the etching of non-dense magnetic tunnel junctions. Thus, the problems of low selectivity and low steepness during the etching of dense patterns are solved. Further, the square etching groove can greatly improve the TMR and service life of the MTJ junction and eliminate bottom deposition.

The invention discloses a preparation method of an efficient graphene-carbon nanotube transistor sensor and a method for detecting Hg < 2 + > by using the sensor, and the preparation method of the efficient graphene-carbon nanotube transistor sensor comprises the following steps: S1, preparing graphene; s2, transferring the graphene; s3, carrying out reactive ion etching and thermal evaporation on the gold electrode; s4, surface functional modification of the sensor; the high-quality graphene film is prepared by a chemical vapor deposition method, and is transferred to the surface of the silicon wafer on which the carbon nanotubes are pre-grown by a PMMA (polymethyl methacrylate) auxiliary transfer method to form a unique bent and curled structure, and the structure not only greatly increases the effective specific surface area of the material, but also gives full play to the synergistic effect of the graphene and the carbon nanotubes, so that the performance of the material is improved. The electrochemical activity of the sensor is obviously improved, so that the Hg < 2 + > detection sensitivity reaches a picomole level.

The invention discloses a method for preparing a thermoelectric device based on a monatomic layer IV-VI group nanobelt. The method comprises the following steps: synthesizing a monatomic layer IV-VI group nanosheet through a one-pot method solution, transferring the monatomic layer IV-VI group nanosheet to a SiO2 / Si substrate, patterning the monatomic layer IV-VI group nanosheet into a nanobelt through electron beam lithography and reactive ion etching technologies, and then depositing a metal contact point and assembling the metal contact point into the thermoelectric device. Based on the excellent thermoelectric performance of the monatomic layer nanobelt predicted through theoretical research, the thermoelectric figure of merit (ZT) is remarkably improved through the quantum confinement effect and the low heat conductivity characteristic of the monatomic layer nanobelt, and the method is suitable for the fields of waste heat power generation, electronic cooling and the like. The technological process is controllable, and potential large-scale production capacity is achieved. According to the method, the thermoelectric performance is optimized by accurately controlling the thickness of the nanosheets and the width of the nanoribbons, the experimental steps are closely combined with theoretical prediction, the method is suitable for various IV-VI family materials, and a new technical path is provided for development of efficient thermoelectric devices.

The application discloses a method for improving the moisture and heat resistance reliability of a bump connection structure, which comprises the following steps: (1) performing hydroxylation treatment on the bump connection structure for semiconductor device connection; (2) performing treatment on the bump connection structure with an organic compound to form a self-assembled molecular film; (3) performing dehydration treatment on the bump connection structure; and (4) performing etching on the self-assembled molecular film by using a reactive ion etching technology. Finally, the self-assembled molecular film with regular orientation and close arrangement is formed on the surface of the bump connection structure, especially at the undercut structure. The preparation method is simple, the self-assembled molecular film formed has high stability and corrosion resistance, and the reliability and stability of the bump in a moisture and heat environment can be effectively improved.