1176results about How to "Forming accurately" patented technology

Disclosed are methods and compositions for producing heterologous disulfide bond containing polypeptides in bacterial cells. In preferred embodiments the methods involve co-expression of a prokaryotic disulfide isomerase, such as DsbC or DsbG and a gene encoding a recombinant eukaryotic polypeptide. Exemplary polypeptides disclosed include tissue plasminogen activator.

There is provided an exposure apparatus capable of forming a desirable device pattern by removing unnecessary liquid when performing exposure by projecting a pattern onto the substrate via a projection optical system and the liquid. The exposure device projects an image of the pattern onto the substrate P via the projection optical system and the liquid so as to expose the substrate P. The exposure device includes a liquid removing mechanism 40 which removes the liquid remaining on a part 7 arranged in the vicinity of the image plane of the projection optical system.

A substance including tungsten and carbon is etched by using plasma. The plasma is generated from a mixed gas of a gas including a fluorine atom, a gas including a nitrogen atom and a gas including a hydrocarbon molecule.

An exposure apparatus exposes a substrate P by locally filling a side of an image plane of a projection optical system PL with a liquid 50 and projecting an image of a pattern onto the substrate P through the liquid 50 and the projection optical system PL. The exposure apparatus includes a recovery unit 20 which recovers the liquid 50 outflowed to the outside of the substrate P. When the exposure process is performed in accordance with the liquid immersion method, the pattern can be transferred accurately while suppressing any environmental change even when the liquid outflows to the outside of the substrate.

A semiconductor device manufacturing method, the method including: forming an insulation layer having a protruding portion, the insulation layer having a surface and a rising surface that protrudes upward from the surface, on a semiconductor substrate; forming a conductive layer to cover the insulation layer having the protruding portion; and removing a predetermined region of the conductive layer by patterning the predetermined region according to an etching process using microwave plasma, which uses a microwave as a plasma source, while applying bias power of 70 mW/cm² or above on the semiconductor substrate, under a high pressure condition of 85 mTorr or above.

Disclosed are a toothbrushing pattern analyzing/correcting device, a toothbrushing pattern analyzing/correcting method, a method and a system for interactively correcting toothbrushing behavior. The toothbrushing pattern analyzing/correcting device of the present invention includes: a body part formed in the same direction as a toothbrush surface; a sensing unit having a sensor with at least one or more axes for sensing a user's toothbrushing motion and a sensor with one or more axes for sensing two or more toothbrushing positions; and a controller for operating signals input from the sensing unit to classify a user's toothbrushing motion into at least two or more patterns and at least two or more toothbrushing parts. Further, the toothbrushing pattern analyzing/correcting method includes the steps of: detecting the start of a user's toothbrushing; displaying a guiding screen in response to the start of a user's toothbrushing; detecting a user's toothbrushing pattern; analyzing the user's detected toothbrushing pattern; and providing a toothbrushing correction screen with the intention of increasing compliance in accordance with the analyzed result. Accordingly, toothbrushing behavior correction compliance can be further enhanced with a method of interactively correcting a user's toothbrushing behavior through multimedia image substances in real time, and more systematic management and health consultation are possible by building a database of information of the user's toothbrushing behavior.

Chip capacitors 20 are provided in a printed circuit board 10. In this manner, the distance between an IC chip 90 and each chip capacitor 20 is shortened, and the loop inductance is reduced. In addition, the chip capacitors 20 are accommodated in a core substrate 30 having a large thickness. Therefore, the thickness of the printed circuit board does not become large.

After a mask is carried into a reserve room for temporarily storing before carrying into a mask room filled with specific gas that has an impurity concentration lower than a first concentration (e.g. 1 ppb) and that has a characteristic of absorbing little exposure light, gas-replacement mechanisms replace gas in the reserve room with specific gas having an oxygen concentration not lower than the first concentration. Therefore, when subsequently carrying the mask into the mask room, impurities from the outside (including absorbent gas) can be substantially prevented from getting into the optical path inside the mask room. When replacing a wafer, gas in a reserve room is also replaced in the same way as the above.

The present invention relates to a microchip apparatus using liquids. More specifically, the invention provides a liquid mixing apparatus comprising at least two microchannels for introducing liquids and a mixing microchannel that connects to the at least two liquid-introducing microchannels, wherein the liquids are transported from the respective liquid-introducing microchannels toward the mixing microchannel, the apparatus further comprising means for enhancing the mixing of the liquids that converge in the mixing microchannel. The invention also provides an electrophoretic apparatus and a microchip electrophoretic apparatus for denaturing gradient gel electrophoresis.

Embodiments of the present disclosure include a user detection system for exercise equipment, such as a treadmill. In an embodiment, a sensor monitors displacement between a deck supporting a moveable treadmill belt and aspects of a treadmill frame. As users interact with the treadmill, a processor uses a sensor signal indicative of the displacement to determine whether a user has mounted the treadmill belt.

A thin film formation method is provided which can carry out various kinds of patterning deposition correctly and with high precision, and a thin film formation equipment. The thin film formation method arranges a mask between a substrate and a material source and forms the material of the material source as a thin film on the substrate. The method further includes: a substrate contacting process to contact the mask and the substrate; a gap measurement process to measure a gap between the mask and the substrate; and a thin film formation process to form the thin film according to the measurement result in the gap measurement process.

In order to calibrate in amplitude and phase the individual transceiver elements (4) of an active antenna array for a mobile telecommunications network, each transceiver element including a transmit and a receive path (8, 10) coupled to an antenna element (12), each transceiver element includes a comparator (100) for comparing phase and amplitude of transmitted or received signals with reference signals in order to adjust the characteristics of the antenna beam. In order to provide an accurate means of reference signal distribution, a feed arrangement distributes the reference signals and includes a waveguide (50) of a predetermined length which is terminated at one end (52) in order to set up a standing wave system along its length, and a plurality of coupling points (56) at predetermined points along the length of the waveguide, which are each coupled to a comparator of a respective transceiver element.

A method for forming a pattern on a substrate, including the steps of: ejecting liquid drops from an ejection head having nozzles onto a reference plate on which a plurality of target positions are defined, the target positions being arranged in at least one row; detecting an amount of a displacement between the target positions and the positions at which the liquid drops have actually landed; determining a relative positional error relative to the ejection head for each of the at least one row of the target positions based on the amount of the displacement; determining a correction value for each of the at least one row based on the relative positional error; and sequentially changing a relative position of the substrate and the ejection head based on the corrections values when the liquid drops are being ejected onto the substrate.

One aspect of this disclosure relates to a method for creating a gettering site in a semiconductor wafer. In various embodiments, a predetermined arrangement of a plurality of holes is formed in the semiconductor wafer through a surface of the wafer. The wafer is annealed such that the wafer undergoes a surface transformation to transform the arrangement of the plurality of holes into a predetermined arrangement of at least one empty space of a predetermined size within the wafer to form the gettering site. One aspect relates to a semiconductor wafer. In various embodiments, the wafer includes at least one device region, and at least one gettering region located proximate to the at least one device region. The gettering region includes a precisely-determined arrangement of a plurality of precisely-formed voids that are formed within the wafer using a surface transformation process. Other aspects and embodiments are provided herein.

An exposure apparatus comprises: a movable body that is arranged on an image plane side with respect to a projection optical system; a wavefront measuring unit at least a part of which is arranged on the movable body and that measures wavefront information of the projection optical system; an adjusting unit that adjusts an imaging state of a projected pattern generated on an object via the projection optical system; and a controller that determines adjustment information of the projection optical system using the least-squares method based on the wavefront information and Zernike Sensitivity corresponding to exposure conditions of the object, and controls the adjusting unit based on the adjustment information. The controller determines a coefficient in a predetermined term of a Zernike polynomial from the wavefront information, and determines an adjustment amount of an optical element of the projection optical system as the adjustment information, based on data regarding a relation between an adjustment amount of the optical element of the projection optical system and variation of the determined coefficient in a predetermined term of a Zernike polynomial.

The source/drain zones (140 and 142 or 160 and 162) of a p-channel IGFET (120 or 122) are provided with graded-junction characteristics to reduce junction capacitance, thereby increasing switching speed. Each source/drain zone contains a main portion (140M, 142M, 160M, or 162M) and a more lightly doped lower portion (140L, 142L, 160L, or 162L) underlying, and vertically continuous with, the main portion.

Exposure for performing patterning in which micropatterns differing in pitch exist in close vicinity to one another is handled, and micropatterns are formed with high accuracy with sufficient manufacture process margins without using a photomask complicated in manufacturing process at high manufacture cost like an alternating phase shift mask. A light intensity distribution of irradiation light constituted of double pole illuminations is formed to correspond to L&S patterns. The double pole illumination is constituted of a pair of illumination modes, and the double pole illumination is constituted of a pair of illumination modes.