643results about How to "Avoid etching" patented technology

A semiconductor transistor has a structure including a semiconductor substrate, a source region, a drain region and a channel region in between the source region and the drain region. A metal gate, having a top conductive portion of tungsten is provided above the channel region. A first silicon nitride protective layer over the source region and the drain region and a second silicon nitride protective layer over the gate region are provided. The first silicon nitride protective layer and the second silicon nitride protective layer are configured to allow punch-through of the first silicon nitride protective layer while preventing etching through the second silicon nitride protective layer. Source and drain silicide is protected by avoiding fully etching a gate opening unless either the etching used would not harm the silicide, or the silicide and source and drain contacts are created prior to fully etching an opening to the gate for a gate contact.

A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e.g., with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.

A semiconductor substrate is patterned to form a depression and prominence. A floating gate is formed so as to cover at least both sidewalls of the prominence of the depression and prominence, and is then etched to form a trench for a device isolation self-aligned with the floating gate. Related structures are also described.

Various processes and related systems are provided for making structures on substrate surfaces. Disclosed are methods of making a structure supported by a substrate by providing a substrate having a receiving surface and exposing at least a portion of the receiving surface to output from a remote plasma of an inert gas. The remote plasma has an energy low enough to substantially avoid etching or sputtering of the receiving surface but sufficient to generate a treated receiving surface. The treated surface is contacted with a deposition gas, thereby making the structure supported by the substrate.

Techniques herein include methods of patterning substrates such as for back end of line (BEOL) metallization processes. Techniques herein enable fully self-aligned vias and lines. Processes herein include using selective deposition, protective films and combination etch masks for accurately patterning a substrate. In a substrate having uncovered portions of metal material and dielectric material, the dielectric material is grown upwardly without covering metal material. This raised dielectric material is conformally protected and used in subsequent patterning step to align via and line placement. Such combinations mitigate overlay errors.