1results about How to "Avoid etching" patented technology

The application relates to a semiconductor device and a preparation method thereof. The method comprises the following steps: providing a substrate; forming a plurality of first passivation layers arranged at intervals on the surface of the substrate; forming a plurality of ridges in the substrate, each ridge comprising part of the substrate, and each ridge having two sidewalls in the form of grooves formed in the substrate; wherein the first passivation layer is located on the ridge, and the total height of the first passivation layer and the ridge is greater than a height threshold; forming a second passivation layer on the surface of the substrate and the surface of each first passivation layer; forming a first photoresist layer on the surface of the second passivation layer; performing a patterning process on the first photoresist layer to expose the second passivation layer away from the first passivation layer and the second passivation layer on the ridge; and using a reflow process to make the first photoresist layer in each groove reflow along the sidewall of the ridge to cover the second passivation layer on the two sidewalls of the ridge. The application increases the height of the first passivation layer to improve the success rate of the reflow process, so that the reflow process is suitable for semiconductor devices with different ridge heights.