623results about How to "Increase contact resistance" patented technology

Methods and systems for selectively depositing a p-type doped silicon germanium layer and structures and devices including a p-type doped silicon germanium layer are disclosed. An exemplary method includes providing a substrate, comprising a surface comprising a first area comprising a first material and a second area comprising a second material, within a reaction chamber; depositing a p-type doped silicon germanium layer overlying the surface, the p-type doped silicon germanium layer comprising gallium; and depositing a cap layer overlying the p-type doped silicon germanium layer. The method can further include an etch step to remove the cap layer and the p-type doped silicon germanium layer overlying the second material.

A graphene oxide used as a raw material of a conductive additive for forming an active material layer with high electron conductivity with a small amount of a conductive additive is provided. A positive electrode for a nonaqueous secondary battery using the graphene oxide as a conductive additive is provided. The graphene oxide is used as a raw material of a conductive additive in a positive electrode for a nonaqueous secondary battery and, in the graphene oxide, the weight ratio of oxygen to carbon is greater than or equal to 0.405.

A phenomenon of change of a contact resistance between an oxide semiconductor and a metal depending on an oxygen content ratio in introduced gas upon depositing an oxide semiconductor film made of indium gallium zinc oxide, zinc tin oxide, or others in an oxide semiconductor thin-film transistor. A contact layer is formed with an oxygen content ratio of 10% or higher in a region from a surface, where the metal and the oxide semiconductor are contacted, down to at least 3 nm deep in depth direction, and a region to be a main channel layer is further formed with an oxygen content ratio of 10% or lower, so that a multilayered structure is formed, and both of ohmic characteristics to the electrode metal and reliability such as the suppression of threshold potential shift are achieved.

The present invention discloses a method of manufacturing a super large wide-angle super high-speed response LCD apparatus by using a photolithographic process for three times. The invention adopts a halftone exposure technology and a nitrogen ion doped technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an alignment control electrode. A P-CVD apparatus is provided for forming a passivation layer into a film by using a masking deposition method, or an ink-jet coating method is used to coat a protective layer at a partial area, and a photolithographic process is performed for three times to manufacture a TFT matrix substrate of the super large wide-angle super high-speed response LCD.

A method for making a textile sensor and a textile sensor can include selecting a combination of variables from the group consisting of yarn variables, stitch variables, and textile variables; and knitting an electrically conductive yarn in the textile sensor in accordance with the selected combination of variables, wherein the combination of variables is selected so as to provide a controlled amount of contact resistance in the textile sensor. The method and textile can further include a capacitive textile-sensor having at least two integrally knit capacitor plate elements and having a configuration adapted for a sensing activity. Resistance in the textile sensor can automatically calibrate to a stable baseline level after the textile sensor is applied to a body.

The invention discloses a single / multi-layer magnetic conductive sheet for wireless charging and a preparation method thereof. The single-layer magnetic conductive sheet comprises a layer of magnetic slice. Multiple strips of cracks are uniformly distributed on the slice and divide the slice into multiple fragment units. Gaps of the cracks are filled with insulation medium, so fragment units on two sides of the cracks are mutually insulated. The single-layer magnetic conductive sheet also comprises a double-faced adhesive tape which is adhered to one face of the magnetic slice. A protection film formed by the insulation medium is formed on the other face of the magnetic slice. The preparation method comprises steps of heat treatment, adhesion of the double-faced adhesive tape, crack processing, gum dipping processing and drying and curing processing. According to the invention, inductance value and quality factor of a charging coil are increased, charging efficiency is increased and loss is reduced. The continuously prepared magnetic conductive sheet is characterized by controllable magnetic conductivity, continuous production, convenient operation and simple insulation processing.

An organic thin film transistor that has good adhesiveness and good contact resistance as well as allows ohmic contact between an organic semiconductor layer and a source electrode and a drain electrode, and its manufacturing method. There is also provided a flat panel display device using the organic thin film transistor. The organic thin film transistor includes a source electrode, a drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode formed on a substrate, and a carrier relay layer including conductive polymer material formed at least between the organic semiconductor layer and the source electrode or the organic semiconductor layer and the drain electrode.

A method of forming an integrated circuit interconnect structure is presented. A first conductive line is formed over a semiconductor substrate. A conductive cap layer is formed on the first conductive line to improve device reliability. An etch stop layer (ESL) is formed on the conductive cap layer. An inter-level dielectric (IMD) is formed on the ESL. A via opening and a trench are formed in the ESL, IMD, and conductive cap layer. A recess is formed in the first conductive line. The recess can be formed by over etching when the first dielectric is etched, or by a separate process such as argon sputtering. A second conductive line is formed filling the trench, opening and recess.

A tin-silver press-fit interconnect which includes a press-fit terminal having a coating or finish of a tin-silver compound for use with a terminal receiving device. The tin-silver compound serves to prevent the formation of tin whiskers which appear most frequently in pure tin coated electrical components under mechanical stress and which make the electronic device susceptible to short circuits. The tin-silver compound may include between 85 and 99.5% weight of tin and between 0.5 and 15% weight of silver and is applied at a thickness range between 0.4 and 5 microns using a technique such as electroplating, hot dip or immersion.

To provide a method for forming a storage battery electrode including an active material layer with high density in which the proportion of conductive additive is low and the proportion of the active material is high. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of a storage battery electrode formed by the formation method. A method for forming a storage battery electrode includes the steps of forming a mixture including an active material, graphene oxide, and a binder; providing a mixture over a current collector; and immersing the mixture provided over the current collector in a polar solvent containing a reducer, so that the graphene oxide is reduced.

A method of forming a semiconductor structure includes forming a PMOS device and an NMOS device. The step of forming the PMOS device includes forming a first gate stack on a semiconductor substrate; forming a first offset spacer on a sidewall of the first gate stack; forming a stressor in the semiconductor substrate using the first offset spacer as a mask; and epitaxially growing a first raised source / drain extension (LDD) region on the stressor. The step of forming the NMOS device includes forming a second gate stack on the semiconductor substrate; forming a second offset spacer on a sidewall of the second gate stack; epitaxially growing a second raised LDD region on the semiconductor substrate using the second offset spacer as a mask; and forming a deep source / drain region adjoining the second raised LDD region.

The invention discloses a metallic bipolar plate of a proton exchange membrane fuel cell and a single cell and an electric stack formed by the same. The metallic bipolar plate is a non-planar arc plate with certain curvature, and is formed by relatively combining a cathode monopolar plate and an anode monopolar plate which are made of metal sheets; cathode and anode cavities, cooling medium cavities, flow field area grooves and lug bosses of the two plates have mutual corresponding convex-concave shapes and form a fuel gas passage, an oxidant gas passage and a cooling medium passage respectively; and a membrane electrode and single bipolar plate can be combined into single fuel cell, and a plurality of single cells can be superposed and connected to form the electric stack. Compared with a common metallic bipolar plate, the bipolar plate has better mechanical property, is not easy to deform or dislocated after assembly, and has high stability; and because the contact between the bipolar plate and a diffusion layer of the membrane electrode is good, the internal resistance is low, the energy consumption is low, and the formed electric stack can provide higher output voltage and higher output power.

In Trench-Gate Fin-FET, in order that the advantage which is exerted in Fin-FET can be sufficiently taken even if a transistor becomes finer and, at the same time, decreasing of on-current can be suppressed by saving a sufficiently large contact area in the active region, a fin width 162 of a channel region becomes smaller than a width 161 of an active region.

By using a non-conformal diffusion barrier in conjunction with a similarly deposited non-conformal initial deposition of siliciding material, a substantially uniform and conformal silicide can be formed in a 3D structure such as the fin of a FinFET. The siliciding material may be nickel (Ni), the diffusion barrier may be titanium (Ti) or titanium nitride (TiN). Generally, the diffusion barrier may be any material which will inhibit, but not block, diffusion of the siliciding material into the silicon. In this manner, a non-conformal barrier deposition, in conjunction with a non-conformal silicide material deposition, after anneal, results in substantially conformal silicide formation.

In a semiconductor device including an oxide semiconductor layer, a conductive layer is formed in contact with a lower portion of the oxide semiconductor layer and treatment for adding an impurity is performed, so that a channel formation region and a pair of low-resistance regions between which the channel formation region is sandwiched are formed in the oxide semiconductor layer in a self-aligned manner. Wiring layers electrically connected to the conductive layer and the low-resistance regions are provided in openings of an insulating layer.

A gated electrical device includes a non-conductive substrate and a graphene structure disposed on the non-conductive substrate. A metal gate is disposed directly on a portion of the graphene structure. The metal gate includes a first metal that has a high contact resistance with graphene. Two electrical contacts are each placed on the graphene structure so that the metal gate is disposed between the two electrical contacts. In a method of making a gated electrical device, a graphene structure is placed onto a non-conductive substrate. A metal gate is deposited directly on a portion of the graphene structure. Two electrical contacts are deposited on the graphene structure so that the metal gate is disposed between the two electrical contacts.

The object of the invention is to suppress the increase of contact resistance between electrodes and restrain the reducing of pass percent in a liquid crystal display device that controls a liquid crystal using an electric field that is substantially horizontal with respect to a transparent substrate. A method of manufacturing the liquid crystal display device includes: forming a first etching stopper electrode (20P) connected to the drain electrode(16D) and a common electrode (20) connected to a leading-out line, which pass through openings (H8, H9) formed on a passivating film (17) and a plainness film (18) covering a switching element (TR); forming a insulating film (21) by covering the first etching stopper electrode and the common electrode; selectively etching the insulating film in a dry-type way; removing a residue on the first etching stopper electrode by etching in a wet-type way; forming a pixel electrode (22) that is connected to the first etching stopper electrode and that extends onto the second insulating film.

A method for fabricating a semiconductor device is disclosed. The method includes providing a substrate; forming at least one gate structure over the substrate; forming a plurality of doped regions in the substrate; forming an etch stop layer over the substrate; removing a first portion of the etch stop layer, wherein a second portion of the etch stop layer remains over the plurality of doped regions; forming a hard mask layer over the substrate; removing a first portion of the hard mask layer, wherein a second portion of the hard mask layer remains over the at least one gate structure; and forming a first contact through the second portion of the hard mask layer to the at least one gate structure, and a second contact through the second portion of the etch stop layer to the plurality of doped regions.

A battery module including: a plurality of rechargeable batteries including a first terminal and a second terminal; and a connecting member electrically connecting rechargeable batteries of the plurality of rechargeable batteries through the first and second terminals, the connecting member including an access protrusion protruded toward the first terminal, and the first terminal includes a pressurizer configured to press the access protrusion toward a part of the first terminal.

Provided are high-aspect ratio printable thick film metal paste compositions that can be deposited onto a substrate using, for example, screening printing techniques; and methods of preparing and using thick film printable metal pastes; and methods of screen printing of the thick film metal paste compositions onto a substrate to produce printed circuits, conductive lines or features on the substrate and / or a conductive surface on a solar cell device. Also provided are printed substrates containing an electronic feature produced by the high-aspect ratio printable thick film metal paste compositions.

To provide a storage battery electrode including an active material layer with high density that contains a smaller percentage of conductive additive. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of the electrode for a storage battery. A slurry that contains an active material and graphene oxide is applied to a current collector and dried to form an active material layer over the current collector, the active material layer over the current collector is rolled up together with a spacer, and a rolled electrode which includes the spacer are immersed in a reducing solution so that graphene oxide is reduced.

An electrode comprises a planar collector, and an active material containing layer disposed on the collector. The active material containing layer comprises a plurality of particles containing an active material, and a binder for binding the particles containing the active material to each other and the particles containing the active material to the collector. The collector has a surface depressed in conformity to a form of the particles containing the active material.

The present invention discloses a method of manufacturing a super large wide-angle super high-speed response LCD apparatus by using a photolithographic process for three times. The invention adopts a halftone exposure technology and a nitrogen ion doped technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an alignment control electrode. A P-CVD apparatus is provided for forming a passivation layer into a film by using a masking deposition method, or an ink-jet coating method is used to coat a protective layer at a partial area, and a photolithographic process is performed for three times to manufacture a TFT matrix substrate of the super large wide-angle super high-speed response LCD.

With a small amount of a conductive additive, an electrode for a storage battery including an active material layer which is highly filled with an active material is provided. The use of the electrode enables fabrication of a storage battery having high capacity per unit volume of the electrode. By using graphene as a conductive additive in an electrode for a storage battery including a positive electrode active material, a network for electron conduction through graphene is formed. Consequently, the electrode can include an active material layer in which particles of an active material are electrically connected to each other by graphene. Therefore, graphene is used as a conductive additive in an electrode for a sodium-ion secondary battery including an active material with low electric conductivity, for example, an active material with a band gap of 3.0 eV or more.

A first region 11 functioning as a transistor includes a drain region 111, a body region 112 formed over the drain region 111, a source region 113A formed over the body region 112 and a trench formed through the body region 112 and having a gate electrode 120 buried therein. A source region 113B is formed over the body region 112 extending in a second region 12.

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

The invention relates to an AgWC (wolfram carbide) electrical contact material and a manufacturing method thereof, in particular to a silver-based electric contact material and a manufacturing method thereof, belonging to the technical field of electrical contact materials. A substrate of the AgWC electrical contact material is infiltrated with silver from upper surface to lower surface. The manufacturing method comprises the following steps of: obtaining Ag and WC mixed powder by applying a powder mixing process; pressing the mixed powder into a powder billet by applying a powder pressing process; then putting a prepared thin silver sheet on the powder billet by applying an infiltration sintering process, conveying into a heating furnace and heating, melting the silver sheet and infiltrating into the powder billet to further obtain an AgWC electric contact; and beautifying the surface of the AgWC electric contact by applying a polishing process. The AgWC electric contact manufactured by adopting the manufacturing process has favorable electric conduction performance and heat conduction performance, high corrosion resistance, strong fusion welding resistance, and the like.

The invention relates to electronic silver paste and a preparation process thereof, belonging to the technical field of production of such base materials as electronic ceramic components, thick film hybrid circuits, touch components and the like. The electronic silver paste is prepared by mixing and stirring 4-9% of glass powder, 63-80% of silver powder, 12-28% of organic carrier and 0.2-2% of additive, rolling, dispersing and grinding the mixture, then adding 1-2wt% of bismuth stearate, stirring the mixture uniformly and filtering the mixture with a screen. The electronic silver paste and the preparation process have the following beneficial effects: the glass powder system does not contain lead; the minimum grain size and shape of the silver powder are not strictly required; and the silver paste is especially suitable for the positive electrodes of the solar cells on the crystalline silicon solar cell silicon substrates produced in large batch and has excellent electrical property and mechanical property..

A positive electrode for a nonaqueous secondary battery including an active material layer which has sufficient electron conductivity with a low ratio of a conductive additive is provided. A positive electrode for a nonaqueous secondary battery including an active material layer which is highly filled with an active material, id est, including the active material and a low ratio of a conductive additive. The active material layer includes a plurality of particles of an active material with a layered rock salt structure, graphene that is in surface contact with the plurality of particles of the active material, and a binder.