60 results about "Threshold potential" patented technology

A phenomenon of change of a contact resistance between an oxide semiconductor and a metal depending on an oxygen content ratio in introduced gas upon depositing an oxide semiconductor film made of indium gallium zinc oxide, zinc tin oxide, or others in an oxide semiconductor thin-film transistor. A contact layer is formed with an oxygen content ratio of 10% or higher in a region from a surface, where the metal and the oxide semiconductor are contacted, down to at least 3 nm deep in depth direction, and a region to be a main channel layer is further formed with an oxygen content ratio of 10% or lower, so that a multilayered structure is formed, and both of ohmic characteristics to the electrode metal and reliability such as the suppression of threshold potential shift are achieved.

The invention relates to an electronic circuit especially comprising: a comparator (12) receiving a threshold potential (Vcomp) and the potential of an integration node (N), said node being able to store electrical charges generated by a photosensitive element (11); a meter (13) connected at the outlet of the comparator (12); and a circuit (41) for injecting counter-charges. Said injection circuit comprises: a capacitor (143) storing counter-charges; a transfer transistor (M2) that can be controlled in the conducting state for transferring counter-charges from a terminal (A) of the capacitor (143) to the integration node (N) on every oscillation of the comparator (12), the transfer of the counter-charges triggering a variation of a potential (Va) at said terminal (A) of the capacitor (143); and a regulation circuit (42) for controlling the transfer transistor (M2), said regulation circuit comprising means (425) for controlling the transfer transistor (M2) in the conducting state when the potential at the terminal (A) of the capacitor (143) is between two pre-determined potentials (Vp2, Vcomp2) that are independent of the transfer transistor (M2).