5 results about "Group element" patented technology

The application provides a main group element ion doped zero-dimensional metal halide fluorescent sensing material and a preparation method and application thereof, and belongs to the technical field of fluorescent sensing materials. The main group element ion doped zero-dimensional metal halide microcrystal is synthesized by a solvothermal method, the strong dependence of two thermal coupling energy levels of the main group element ion on temperature is utilized, the main group element ion doped zero-dimensional metal halide shows an obvious temperature dependence evolution trend of fluorescence lifetime and fluorescence intensity at low temperature, and dual-mode (fluorescence intensity ratio / fluorescence lifetime) high-sensitivity temperature detection in a liquid helium temperature region can be realized. The synthesis method is simple in process and easy to control in synthesis conditions, the obtained material shows extremely high relative sensitivity in the liquid helium temperature region, has high practical application value, can be used as a novel optical temperature sensing material, and can be used for temperature detection in various extreme temperature regions.

Provided is a group III element nitride semiconductor substrate which includes a first face and a second face and has a large diameter and with which the occurrence of chipping defects is suppressed when manufacturing a device. A group III element nitride semiconductor substrate according to an embodiment of the present invention includes a first face and a second face, and has a thickness of at least 100 μm, wherein: when, on a straight line from a centroid position on the surface of the first face to a centroid position on the surface of the second face, peak wave numbers corresponding to the E2 H phonon modes are measured at intervals of 5 μm from a spot corresponding to 5 μm inward from the surface of the first face to a spot corresponding to half of the thickness of the substrate and from a spot corresponding to 5 μm inward from the surface of the second face to a spot corresponding to half of the thickness of the substrate, and n peak wave numbers obtained through the measurement are B1-Bn (where n is the number of peak wave numbers measured and an integer obtained by rounding up digits after the decimal point of [(thickness (μm) of group III element nitride semiconductor substrate–5 (μm)) / 5 (μm)]), in order from the side of the surface of the first face, the difference (Bmax-Bmin) between the maximum peak wave number Bmax and the minimum peak wave number Bmin among the n measured values is at most 2.0 cm-1.

The invention belongs to the technical field of inorganic non-metallic materials, and particularly relates to an A-site silicon-containing MAX-phase layered material and a preparation method and application thereof, the molecular formula of the MAX-phase layered material is Mn + 1AXn, M is one or more of IIIB, IVB, VB or VIB group elements; a is a silicon element or an alloy formed by silicon and other main group elements or subgroup elements in any proportion; x is one or more of carbon, nitrogen and boron; n is 1, 2, 3 or 4; the preparation method comprises a gas phase reaction method or a solid phase reaction method, for example, taking an MAX phase precursor and a silicon-containing substance as raw materials, reacting at a specific temperature and atmosphere, and washing and drying to obtain a target product. The method is easy and convenient to operate and wide in applicability, and controllable preparation of the A-site silicon-containing MAX phase with the M site being a non-titanium element is achieved for the first time. According to the invention, the material system of the Si-MAX phase is obviously expanded, and the problems that the original Si-MAX phase is limited in variety and the M-site element type is limited are solved.

An article for containing a molten material is disclosed. The article comprises an alloy compound. The alloy compound includes a transition metal and three non-metallic elements distributed within the transition metal. The transition metal is chosen from a group IVB element, a group VB element, or a group VIB element. The non-metallic elements are independently chosen from carbon, nitrogen, oxygen, silicon, boron, or phosphorus. A method of producing an article comprises forming a carboxynitride compound of a transition metal chosen from a group IVB element, a group VB element, or a group VIB element; and forming the article comprising the carboxynitride compound of the transition metal.

The application provides an ABX3Brx-based sub-nanosecond level scintillation material, a preparation method and application thereof, and the molecular formula of the scintillation material is ABX3Br x Wherein, A is one alkali metal element or a combination of multiple alkali metal elements in the I main group; B is one element or a combination of multiple elements in the IV main group; X is one element or a combination of multiple elements in the VIIA group; x=0.01-0.03. The decay time of the scintillation material reaches a sub-nanosecond level at room temperature, and the scintillation material can be applied to the PET-CT and superfast pulsed ray field as a superfast scintillation material.