579 results about "Group element" patented technology

Oxygen defects formed at the boundary between the zinc oxide type oxide semiconductor and the gate insulator are terminated by a surface treatment using sulfur or selenium as an oxygen group element or a compound thereof, the oxygen group element scarcely occurring physical property value change. Sulfur or selenium atoms effectively substitute oxygen defects to prevent occurrence of electron supplemental sites by merely applying a gas phase or liquid phase treatment to an oxide semiconductor or gate insulator with no remarkable change on the manufacturing process. As a result, this can attain the suppression of the threshold potential shift and the leak current in the characteristics of a thin film transistor.

A method of forming a refractory metal film doped with III or V group elements. The first process gas is supplied from a first gas source through a first gas introducing member to and through a gas supply mechanism toward a substrate within a processing vessel. The second process gas is supplied from a second gas source through a second gas introducing member to and through the gas supply mechanism toward the substrate within the processing vessel. The processing vessel is purged by evacuating the processing vessel by an evacuating mechanism, while supplying the inert gas from a third source through a third gas introducing member to and through the gas supply mechanism into the processing vessel. The supplying the first process gas and the supplying the second process gas are repeated with the supplying the purging gas being carried out between supplying the first and second gases performed so that residual gas present in the processing vessel after performing the supplying of the first and second process gases is reduced to a level of 1 to 30% based on the entire capacity of the processing vessel.

The invention relates to a collaborative signature and decryption method, apparatus and system of an SM2 algorithm. The collaborative signature method of the SM2 algorithm implemented from the angle of a first communication party comprises the following steps: generating a message abstract of a to-be-singed message according to a preset password hash algorithm; receiving a first elliptic curve group element fed back by a second communication party based on a first public key parameter and a selected random number; generating a first part signature according to the message abstract and the first elliptic curve group element; performing modular arithmetic based on the first part signature to generate a confused intermediate result, and transmitting the confused intermediate result to the second communication party; when the intermediate signature fed back by the second communication party according to the confused intermediate result is received, generating a second part signature according to the intermediate signature and the first part signature; and obtaining a complete SM2 digital signature according to the first part signature and the second part signature.

A system and method for creating a custom grouping of data in a database. A custom group object is created, a plurality of custom group elements are defined, each of the custom group elements being a subset of the custom group object and being defined by a different filter, each one of the different filters representing a logical expression of qualifications based on the data or a derived calculation of the data. Each of the different filters is resolved against the data or a subset of the data, and the plurality of custom group elements are grouped into a consolidated result set which in not naturally existing in the data structure.

The invention relates to a catalyst for preparing olefin by dehydrogenating low-carbon alkane, and a preparation method and an application thereof, which belong to the technical field of the preparation of basic organic chemical raw materials. The catalyst is prepared by a dipping method of using an aluminium silicophosphate molecular sieve as a carrier, VIII group or VIB group elements as active constituents and IVA group elements as an auxiliary agent. In the process for preparing olefin by dehydrogenating low-carbon alkane, the catalyst is firstly reduced by hydrogen gas, then participates in a reaction, and is finally regenerated. Compared with the existing catalyst for preparing olefin by dehydrogenating low-carbon alkane, the catalyst has a pore shape selecting function and moderate acidity, thereby the selectivity of the low-carbon alkane can reach more than 90 percent in the process for preparing olefin by dehydrogenating low-carbon alkane. The preparation method of the catalyst is simple; the regeneration process flow of the reaction has a large choice, a fixed bed, a fluidized bed or a moving bed can be used as a reactor, and the catalyst can be regenerated in the reactor or outside the reactor.

A programmable processor and method for improving the performance of processors by incorporating an execution unit operable to decode and execute single instructions specifying a data selection operand and a first and a second register providing a plurality of data elements, the data selection operand comprising a plurality of fields each selecting one of the plurality of data elements, the execution unit operable to provide the data element selected by each field of the data selection operand to a predetermined position in a catenated result.

A Graphical User Interface or “GUI” for use with a computer operating systems that operates dynamically according to the user's preferences. Each element of the GUI is surrounded by a dynamic edge which allows the user to combine two or more elements together to create a visually coherent unit in real time. Users can merge or fuse together two or more edges together thus creating a combined group that has aspects and qualities from the constituent elements. Particular colors and color combinations can be created by the user along with the user selected shapes and sizes of individual elements selected from a library of element shapes and sizes. The grouped elements can then be separated back to the individual elements for use in different applications or other groupings as later desired by the user.

The invention discloses a catalyst for manufacturing olefin by low-carbon alkane dehydrogenation and application thereof, belonging to the technical field of preparation of basic organic chemical materials. The catalyst takes silicoaluminophosphate molecular sieve and alumina mixture as carriers, VIII group or IVA group elements as active components and alkaline-earth metal or rare-earth elements as auxiliary agents for the process of olefin preparation by ethane, propane, butane or pentane dehydrogenation. In the process of olefin preparation by low-carbon alkane dehydrogenation, catalyst is firstly reduced by hydrogen and then reacts, and finally the catalyst is in charcoaling regeneration and chlorination update; and reaction regeneration process flow has big choice, the reactor can adopt a fixed bed, a moving bed, a fluidized bed or a double-particle fluidized bed, and catalyst regeneration can be carried out in a device or out of the device. Compared with the existing catalyst for manufacturing olefin by low-carbon alkane dehydrogenation, the catalyst provided by the invention ensures that low-carbon alkane selectivity is above 95% in the olefin preparing process by low-carbon alkane dehydrogenation under high conversion rate.

A method for producing a semiconductor film having a chalcopyrite structure including a Ib group element, a IIIb group element and a VIb group element including selenium, the method including cracking selenium with plasma to generate radical selenium, and using the radical selenium in the process of forming the semiconductor film.

The invention relates to methods for preparing 3-element semiconductor nanocrystals of the formula WY_xZ_(1-x), wherein W is a Group II element, Y and Z are different Group VI elements, and 0<X<1, comprising dissolving a Group II element, a first Group VI element, and a second Group VI element in a one or more solvents. The Group II, VI and VI elements are combined to provide a II:VI:VI SCN precursor solution, which is heated to a temperature sufficient to produce semiconductor nanocrystals of the formula WY_xZ_(1-x). The solvent used to dissolve the Group II element comprises octadecene and a fatty acid. The solvent used to dissolve the Group VI elements comprises octadecene. The invention also includes semiconductor nanocrystals prepared according to the disclosed methods, as well as methods of using the semiconductor nanocrystals.

A method and apparatus for compressing and decompressing an audio signal. The apparatus comprises an input for receiving an audio signal derived from a spoken utterance, the audio signal being contained into a plurality of successive data frames. A data frame holding a certain portion the audio signal is processed to generate a feature vector including a plurality of discrete elements characterizing at least in part the portion of the audio signal encompassed by the frame, the elements being organized in a certain sequence. The apparatus makes use of a compressor unit having a grouping processor for grouping elements of the feature vector into a plurality of sub-vectors on the basis of a certain grouping scheme, at least one of the sub-vectors including a plurality of elements from the feature vector, the plurality of elements being out of sequence relative to the certain sequence. The plurality of sub-vectors are then quantized by applying a vector quantization method.

The positive electrode of a lithium ion secondary battery includes active material particles represented by Li_xNi_1-yM_yMe_zO_2+δ, and the active material particles include a lithium composite oxide represented by Li_xNi_1-yM_yO₂, (where 0.95≦x≦1.1, 0<y≦0.75, 0.001≦z≦0.05). The element M is selected from the group consisting of alkaline-earth elements, transition elements, rare-earth elements, IIIb group elements and IVb group elements. The element Me is selected from the group consisting of Mn, W. Nb, Ta, In, Mo, Zr and Sn, and the element Me is included in a surface portion of the active material particles. The lithium content x in the lithium composite oxide in an end-of-discharge state when a constant current discharge is performed at a temperature of 25° C. with a current value of 1C and an end-of-discharge voltage of 2.5 V satisfies 0.85≦x≦−0.013Ln(z)+0.871.

The invention provides an II-II-VI alloy quantum dot, as well as a preparation method and application thereof. The preparation method comprises the steps of S1, reacting a precursor containing secondII group elements and a precursor containing first VI group elements to form an II-VI semiconductor nanocluster; S2, mixing the II-VI semiconductor nanocluster and the precursor containing the first II group elements, and obtaining a first system containing the II-II-VI alloy quantum dot through cation exchange and in-situ growth. The II-VI nanocluster formed at the beginning of nucleating is located at a nanocrystalline nucleation and growth intermediate state and is small in size, the precursor containing the first II group elements is added for carrying out cation exchange, first II group element atoms easily enter the innermost of the II-VI nanocluster so as to form an II-II-VI nanocluster similar to an alloy, and during the continuous growth process, the first II group element atoms are gradually outwards diffused to the whole particle so as to obtain the narrow half-width alloy quantum dot.

The invention discloses a SM2 algorithm collaborative signature and decryption method, device and system. The collaborative signature method comprises the following steps: computing a first elliptic curve group element set and sending the a server-side to check; checking a second elliptic curve group element set fed back by the server-side, and computing a third elliptical curve group element based on the first elliptic curve group element set and the second elliptic curve group element set; computing a first numerical value according to a user information hash value, a to-be-signed message and an abscissa of the third elliptical curve group element; generating a second numerical value according to the first numerical value, the first random number and a client private key component, and sending the second numerical value to the server-side; receiving a third numerical value computed according to the second numerical value, the second random number and the server-side private key component; and synthesizing as a SM2 digital signature according to the first numerical value and the third numerical value. The method disclosed by the invention has features of verification input and provable security, more conforms to the actual application environment, and can protect the user privacy better.

The invention discloses a video foreground object extracting method based on visual saliency and superpixel division. The video foreground object extracting method includes steps: a, dividing multiple layers of superpixels of video: dividing the superpixels of the video used as a three-dimensional video body, and grouping elements of the video body into body areas; b, detecting visual saliency areas of key frames of the video and extracting foreground objects of the key frames: analyzing the visual saliency areas in images of the key frames of the video by a visual saliency detecting method, then using the visual saliency areas as initial values and obtaining the foreground objects of the key frames by an image foreground extracting method; and c, matching the foreground objects of the key frames with a dividing result of the superpixels of the video and transmitting foreground object extracting results of the key frames among the frames: diffusing areas, covered by the foreground objects of the key frames, of the video body, and further continuously transmitting the foreground object extracting results among the frames. The video foreground object extracting method is high in efficiency, accurate in result and little in manual intervention and is robust.

A gate insulating film which is an oxide layer mainly made of SiO₂ is formed over a silicon carbide substrate by thermal oxidation, and then, a resultant structure is annealed in an inert gas atmosphere in a chamber. Thereafter, the silicon carbide-oxide layered structure is placed in a chamber which has a vacuum pump and exposed to a reduced pressure NO gas atmosphere at a high temperature higher than 1100° C. and lower than 1250° C., whereby nitrogen is diffused in the gate insulating film. As a result, a gate insulating film which is a V-group element containing oxide layer, the lower part of which includes a high nitrogen concentration region, and the relative dielectric constant of which is 3.0 or higher, is obtained. The interface state density of an interface region between the V-group element containing oxide layer and the silicon carbide layer decreases.

The interconnect structure of the present invention includes at least a gate insulator layer and an oxide semiconductor layer on a substrate, wherein the oxide semiconductor layer is a layered product having a first oxide semiconductor layer containing at least one element (Z group element) selected from the group consisting of In, Ga, Zn and Sn; and a second oxide semiconductor layer containing at least one element (X group element) selected from the group consisting of In, Ga, Zn and Sn and at least one element (Y group element) selected from the group consisting of Al, Si, Ti, Hf, Ta, Ge, W and Ni, and wherein the second oxide semiconductor layer is interposed between the first oxide semiconductor layer and the gate insulator layer. The present invention makes it possible to obtain an interconnect structure having excellent switching characteristics and high stress resistance, and in particular, showing a small variation of threshold voltage before and after the stress tests, and thereby having high stability.

A solid-state image pickup device 100 is constructed in which a waveguide 15 is formed in an insulating layer on a light-receiving sensor portion 2, a side wall 161 of the waveguide 15 is covered with a reflective film 17 made of an Al film deposited by a CVD method, an underlayer film 19 is formed between the reflective film 17 and the side wall 161 of the waveguide 15 and the underlayer film 19 is made of a VIb-group element. It is possible to obtain a solid-state image pickup device including a waveguide in which hydrogen supplied to the light-receiving sensor portion 2 can be restrained from being absorbed by the underlayer film 19 and which has the reflective film 17 of high reflectivity with satisfactory surface condition, satisfactory coverage and excellent adhesion.

The invention discloses a hydrocarbon oil desulfurization catalyst and a preparation method thereof, and a hydrocarbon oil desulfurization method. Based on the total weight of the hydrocarbon oil desulfurization catalyst as the reference, the hydrocarbon oil desulfurization catalyst comprises 10-80 wt% of at least one of metal oxides of IIB, VB, and VIB group elements, 3-35 wt% of titanium dioxide, 5-40 wt% of silicon nitride, 5-30 wt% of a metal accelerant selected from at least one of cobalt, nickel, iron and manganese, and 1-20 wt% of a molecular sieve with an MFI structure. The hydrocarbon oil desulfurization catalyst is excellent in stability, higher in desulfurization activity, better in wear resistance and longer in service life.

A lithium nickel composite oxide, having small inner resistance, large battery capacity and high thermal stability, can be used as a positive electrode active material for a non-aqueous electrolyte secondary battery. The positive electrode active material is composed of the lithium nickel composite oxide of Li_bNi_1-aM_aO₂ (wherein M represents at least one element selected from a transition metal element other than Ni, the second group element and the thirteenth group element; a satisfies 0.01≦a≦0.5; and b satisfies 0.9≦b≦1.1). This is obtained by filtering and drying the fired powder after water washing, wherein it is dried at 90° C. or lower, till moisture is reduced to 1% or less by mass in drying, and then at 120° C., and under gas atmosphere where content of compound components containing carbon is 0.01% or less by volume, or under vacuum atmosphere.