25 results about "Semiconductor nanocrystals" patented technology

Nanostructures including a first semiconductor nanocrystal including zinc and selenium, and a second semiconductor nanocrystal including a zinc chalcogenide, wherein a composition of the second semiconductor nanocrystal is different from a composition of the first semiconductor nanocrystal,wherein the nanostructures further include tellurium,wherein in the nanostructures, a mole ratio of selenium to tellurium is greater than or equal to about 0.83:1 and less than or equal to about 10:1,wherein a derivative thermogravimetry curve of the nanostructures has an extreme value in a temperature range of greater than or equal to about 250° C. and less than or equal to about 420° C.

Light-emitting diode (100, 200) with several quantum dots (10), having the light-emitting diode (100, 200): a first electrode (110, 210) and a second electrode (120, 220); an emitting material layer (150, 250); an electron transfer layer (164, 244); and a hole transfer layer (144, 264), wherein the emitting material layer (150, 250) is arranged between the electron transfer layer (164, 244) and the hole transfer layer (144, 264) and the emitting material layer (150, 250) has the quantum dots (10), where the quantum dots exhibit (10): a semiconductor nanocrystal or metal oxide core (20); a shell (30) covering the semiconductor nanocrystal or metal oxide core (20), wherein the shell (30) has an outer surface; an X-type ligand (42) having a functional group selected from the group consisting of a carboxylate group, a phosphate group and a thiolate group, which is bonded to a first region of the outer surface; and an L-type ligand (44) having a functional group selected from the group consisting of an amino group, a thiol group, a phosphine group and a phosphine oxide group, which is bonded to a second region of the outer surface, wherein the X-type ligand (42) is bound to the first region of the outer surface by a negatively charged functional group, and the L-type ligand (44) is bound to the second region of the outer surface by an undivided electron pair, wherein a multitude of the first regions of the outer surfaces of the quantum dots (10) are proximal to the hole transfer layer (144, 264) and distal to the electron transfer layer (164, 244), wherein a multitude of the second regions of the outer surfaces of the quantum dots (10) are proximal to the electron transfer layer (164, 244) and distal to the hole transfer layer (144, 264), and where the outer surface is spherical and the first area is a first hemisphere and the second area is a second hemisphere.

A method of manufacturing a semiconductor nanoparticle, a semiconductor nanoparticle manufactured thereby, an electronic device including the semiconductor nanoparticle, and a method of manufacturing the electronic device. The method of manufacturing the semiconductor nanoparticle includes: combining, in a medium including an organic solvent, a first semiconductor nanocrystal including silver, a Group 13 element, and a chalcogen element, or a first particle including the first semiconductor nanocrystal; a sulfur precursor; and a gallium precursor; and heating the medium to a reaction temperature to form a second semiconductor nanocrystal including sulfur and gallium on the first semiconductor nanocrystal or the first particle. The method further includes adding an acid compound to the medium, and the acid compound has a dipole moment of greater than or equal to about 2 debye and less than or equal to about 5 debye.

A semiconductor nanoparticle, a method for preparing the semiconductor nanoparticle, an ink composition including the semiconductor nanoparticle, an electroluminescent device, and a display device including the semiconductor nanoparticle. The semiconductor nanoparticle is configured to emit light and includes a semiconductor nanocrystal and a semiconductor nanocrystal layer including zinc and sulfur. The semiconductor nanoparticle further includes a first compound and a second compound. The first compound includes a first functional group and an aromatic hydrocarbon group or an aliphatic hydrocarbon group having a terminal double bond. The second compound includes a second functional group and an aliphatic hydrocarbon group. The first functional group and the second functional group each independently include a carboxylic acid or its anion.

A core-shell type quantum dot comprising, a semiconductor nanocrystal core including at least In and P, and having group III-V elements as constituent elements and a single or a plurality of semiconductor nanocrystal shells having group II-VI elements as constituent elements covering the semiconductor nanocrystal core, wherein a buffer layer comprising semiconductor nanocrystals having group II-V elements as constituent elements is included between the semiconductor nanocrystal core and the semiconductor nanocrystal shell. As a result, quantum dots using group II-V semiconductor nanocrystals as a core and having improved fluorescence emission efficiency are provided.

A nanoparticle, a method of manufacturing the nanoparticle, a composition including the nanoparticle, a composite including a matrix and a plurality of nanoparticles dispersed in the matrix, a display device including the nanoparticle, and an electronic device including the nanoparticle. The nanoparticle includes a semiconductor nanocrystal including zinc, indium, and selenium. In the semiconductor nanocrystal, a mole ratio of indium to selenium (In:Se) is greater than or equal to about 0.1:1 and less than or equal to about 0.5:1. The nanoparticle does not include cadmium, and the nanoparticle is configured to emit a first light. A peak emission wavelength of the first light is greater than or equal to about 480 nanometers and less than or equal to about 700 nanometers.

A quantum dot composite, a color filter and a display device including the quantum dot composite, and a quantum dot composition are provided. The quantum dot composite includes: a matrix; and a plurality of quantum dots dispersed in the matrix, wherein the plurality of quantum dots include a semiconductor nanocrystal core containing indium and phosphorus and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, and the semiconductor nanocrystal shell includes zinc, selenium, and sulfur. The plurality of quantum dots have an arithmetic size of approximately 8 nm or greater, wherein the quantum dot composite is configured to emit red light, and wherein when the quantum dot composite is irradiated with light having a wavelength of approximately 450 nm to approximately 470 nm for a period of approximately 500 hours or less, the luminance of the quantum dot composite increases by less than or equal to approximately 1.2% of the initial luminance of the quantum dot composite.

This invention relates to nanocrystals and methods for manufacturing semiconductor nanocrystals.

Thermoelectric (TE) nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected interpenetrating networks including nanocrystalline networks. The TE nanocomposite material can be in the form of a bulk solid having semiconductor nanocrystallites that form an electrically conductive network within the material. In other embodiments, the TE nanocomposite material can be a nanocomposite thermoelectric material having one network of p-type or n-type semiconductor domains and a low thermal conductivity semiconductor or dielectric network or domains separating the p-type or n-type domains that provides efficient phonon scattering to reduce thermal conductivity while maintaining the electrical properties of the p-type or n-type semiconductor.

There is provided a film comprising a layer of stacked semiconductor nanocrystals and a matrix material comprising at least one metal oxide wherein the matrix material encapsulates the semiconductor nanocrystals. A method of manufacturing the film and an optoelectronic device are also provided.

A method for making a qubit device comprising a chiral nanocrystal includes forming a gate electrode on a non-conducting substrate, forming an insulating layer over the back gate electrode, immobilizing a bottom face of a semiconductor nanocrystal onto the insulating layer, and placing two or more electrodes on, or in apposition to, a top face of the semiconductor nanocrystal.

The invention discloses a preparation method of a hole transport layer solution implanted with semiconductor nanocrystals and a preparation method of an inverted perovskite solar cell, belongs to the technical field of perovskite solar cells, and can solve the problem that a burying defect is easy to form on a nickel oxide hole transport layer / perovskite layer interface. The method comprises the following steps: dispersing a metastable I-VI group semiconductor in a first isopropanol solvent in a water-free and oxygen-free environment to obtain a semiconductor precursor solution; dispersing the semiconductor precursor solution in a second isopropanol solvent to obtain a semiconductor dispersion solution; carrying out pulse laser irradiation treatment and ultrasonic treatment on the semiconductor dispersion liquid at the temperature of-5 DEG C to 0 DEG C at the same time to obtain a colloidal solution containing semiconductor nanocrystals; dispersing nickel oxide in ultrapure water to obtain a nickel oxide dispersion liquid, and dispersing the colloidal solution in the nickel oxide dispersion liquid to obtain a mixed solution; and filtering the mixed solution to obtain a hole transport layer solution implanted with the semiconductor nanocrystals. The method is used for preparing the hole transport layer.

The application discloses a synthesis method of CdSe / CdS colloidal semiconductor nanocrystal dimers, which comprises the following steps: preparing monodisperse wurtzite CdSe / CdS colloidal semiconductor nanocrystal monomers by using a multistage solvent precipitation strategy on a toluene solution of synthesized wurtzite CdSe / CdS colloidal semiconductor nanocrystals; and then synthesizing CdSe / CdS colloidal semiconductor nanocrystal dimers with a splicing yield of 80% by using a branched long-chain alkyl amine 2-octyl-dodecyl amine as a ligand, heating and inducing splicing of the nanocrystal monomers and again using the multistage solvent precipitation strategy under an inert atmosphere. The synthesis method has the advantages of simple flow, rapid preparation and high efficiency, and the prepared colloidal semiconductor nanocrystal dimers can be widely applied to frontier fields such as quantum information, photoelectric devices and biosensing.

Provided are a semiconductor nanoparticle, a method for preparing the semiconductor nanoparticle, an ink composition including the semiconductor nanoparticle, an electroluminescent device, and a display device including the semiconductor nanoparticle. The semiconductor nanoparticle is configured to emit light and includes a semiconductor nanocrystal and a semiconductor nanocrystal layer including zinc and sulfur. The semiconductor nanoparticle further includes a first compound and a second compound. The first compound includes a first functional group and an aromatic hydrocarbon group or an aliphatic hydrocarbon group having a terminal double bond. The second compound includes a second functional group and an aliphatic hydrocarbon group. The first functional group and the second functional group each independently include a carboxylic acid or an anion of a carboxylic acid.

Methods for manufacturing semiconductor nanoparticles, semiconductor nanoparticles, electronic devices, methods for manufacturing electronic devices, ink compositions, and semiconductor nanoparticle composites are provided. The method for manufacturing semiconductor nanoparticles includes: combining a first semiconductor nanocrystal comprising silver, group 13 elements, and chalcogenides, or a first particle comprising the first semiconductor nanocrystal, a sulfur precursor, and a gallium precursor in a medium comprising an organic solvent; and heating the medium to a reaction temperature to form a second semiconductor nanocrystal comprising sulfur and gallium on the first semiconductor nanocrystal or the first particle. The method further includes adding an acid compound to the medium, wherein the acid compound has a dipole moment greater than or equal to about 2 Debyes and less than or equal to about 5 Debyes.

The present disclosure provides a process for synthesis of metal sulfide semiconductor nanocrystals. The process includes mixing a metal precursor solution with a sulfur precursor solution at a temperature of no more than 200 °C to form a reaction solution. The metal precursor solution includes a metal compound dissolved in a solvent, and the sulfur precursor solution includes a sulfur compound dissolved in a solvent. The metal is present at a concentration of no more than about 1.2 mmol / mL, and the metal and sulfur are present at a S : M molar ratio of at least 1.5 : 1. The metal is lead (Pb), zinc (Zn) or cadmium (Cd). The sulfur compound is a volatile sulfur compound having a boiling point of up to 100°C and / or a low molecular weight sulfur compound having a molecular weight of up to 500 g / mol. Also disclosed are semiconductor nanocrystals made according to the process, a quantum dot solar cell incorporating the semiconductor nanocrystals, use of the semiconductor nanocrystals in a solar cell, and a method of preparing a quantum dot solar cell. Figure 1 to be published with the Abstract.

The application belongs to the technical field of nanocomposite fiber synthesis and piezoelectric sensor and energy storage device preparation, and discloses a preparation method of a wearable piezoelectric sensor, a piezoelectric test experimental device and application. The preparation method comprises the following steps: synthesizing and preparing metal conductive ion-doped semiconductor nanocrystal particles by using a chemical hydrothermal method; mixing with a solution containing a piezoelectric organic polymer, and preparing a flexible nanocomposite fiber felt as a piezoelectric layer by using an electrostatic spinning process; sputtering conductive powder slurry as electrodes on the upper and lower surfaces of the flexible nanocomposite fiber felt, and then performing packaging. The application dopes a certain amount of semiconductor nanocrystals and metal nanoparticles in a PVDF polymer, greatly improves the piezoelectric effect of the composite material and the controllability of the output electric performance, and combines a sensor device preparation process method to achieve the application requirements of a flexible wearable device with high sensitivity and durability.

An integrated optoelectronic device (100, 200, 300) comprises a substrate (30) supporting a passive waveguide (31) for confining refractive index in two lateral directions and guiding at least one optical mode in a longitudinal direction. The device further comprises a first charge transport layer (11) for transporting charge carriers of a first conductivity type, a second charge transport layer (12) for transporting charge carriers of a second conductivity type opposite to the first conductivity type, and an active layer (20) comprising a film of particles of solution-processable semiconductor nanocrystals. The active layer is arranged relative to the charge transport layers to form a diode junction. The active layer and the first and second charge transport layers are further formed on the substrate such that they each overlap at least a portion of the waveguide in a cross-section perpendicular to the longitudinal direction. The active layer is evanescently coupled to the waveguide.

The invention belongs to the technical field of semiconductor materials, and discloses a corn straw-based carbon-doped nano semiconductor composite material and a preparation method thereof.The corn straw-based carbon-doped nano semiconductor composite material is prepared through the steps that corn straw serves as a carbon source, and a macroporous-mesoporous-microporous three-stage through carbon skeleton is constructed through directional pyrolysis and KOH activation; and the 3-15nm semiconductor nanocrystals are uniformly anchored on the inner wall of the pore channel through vacuum impregnation and in-situ confinement crystallization to form a strong covalent coupling interface. The specific surface area of the obtained material reaches 800-1200 m < 2 > / g, the material has an efficient mass transfer channel and a rapid charge migration network, photocatalytic degradation, hydrogen production and CO2 reduction performance are improved, the preparation process is green, the cost is low, and the stability is excellent.

A quantum dot includes: a core including a first semiconductor nanocrystal, and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a dopant, wherein the first semiconductor nanocrystal includes a Group III-V compound, the second semiconductor nanocrystal includes zinc (Zn), sulfur (S), and selenium, and the dopant includes lithium, a Group 2A metal having an effective ionic radius less than an effective ionic radius of Zn2+, a Group 3A element having an effective ionic radius less than an effective ionic radius of Zn2+, or a combination thereof. Also a method of producing the quantum dot, and a composite, and an electronic device including the quantum dot.

Disclosed are quantum dots, quantum dot-polymer composites, and electronic devices including the same. The quantum dot includes: a core including a first semiconductor nanocrystal; a first shell on the core including a second semiconductor nanocrystal, the second semiconductor nanocrystal including a Group III-VI compound; and a second shell on the first shell including a third semiconductor nanocrystal, the third semiconductor nanocrystal having a composition different from that of the second semiconductor nanocrystal; wherein one of the first semiconductor nanocrystal and the third semiconductor nanocrystal includes a Group III-V compound.

An electroluminescent device includes a quantum dot layer disposed between a first electrode and a second electrode, and an electron transport layer disposed between the quantum dot layer and the second electrode; wherein the quantum dot layer is configured to emit a first light, the quantum dot layer including first quantum dots, wherein the first quantum dots include a first semiconductor nanocrystal, wherein the electron transport layer includes zinc oxide nanoparticles, wherein the electroluminescent device further comprises a first layer between the quantum dot layer and the electron transport layer, the first layer including inorganic nanoparticles, wherein the inorganic nanoparticles has a different composition from the zinc oxide nanoparticles and the first quantum dots, and wherein the inorganic nanoparticles comprises a metal chalcogenide having a bandgap energy of greater than or equal to about 2.9 electron volts (eV) and less than or equal to about 10 eV.

A quantum dot including a core including a first semiconductor nanocrystal, and a shell disposed on the core, the shell including a second semiconductor nanocrystal, wherein the quantum dot includes a metal including indium and zinc, and a non-metal including phosphorus and sulfur, does not include cadmium, and has an optical density (OD) of about 0.4 to about 0.6 per 1 milligrams (mg) of the quantum dot for a wavelength of 450 nanometers (nm) and an emission peak wavelength of greater than or equal to about 500 nm and less than or equal to about 550 nm, and a volume of the core of greater than or equal to about 15% and less than or equal to about 50%, based on a total volume of the quantum dot.

A color conversion panel, a group of luminescent nanostructures, and an ink composition are provided. The color conversion panel includes a color conversion layer comprising two or more color conversion regions and optionally partitions defining the regions of the color conversion layer. Each color conversion region includes a first region corresponding to a green pixel, the first region comprising a first composite configured to emit green light and containing a matrix and a plurality of luminescent nanostructures dispersed within the matrix. The luminescent nanostructures include a first semiconductor nanocrystal comprising a group III-V compound and a second semiconductor nanocrystal comprising a zinc chalcogenide, the group III-V compound including indium, phosphorus, and optionally zinc, and the zinc chalcogenide including zinc, selenium, and sulfur. The luminescent nanostructures do not include cadmium, and at least a portion of the surface of the luminescent nanostructures comprises the second semiconductor nanocrystal. The emitted green light has a full width at half maximum (FWHM) of less than or equal to about 42 nm.

Biomineralization—the synthesis of inorganic materials using proteins—has recently gained interest as a low cost, green route for the production of metal chalcogenide semiconductor nanocrystals. Typical biomineralization approaches rely on proteins or biomolecules identified from organisms which possess a native biomineralization response. Disclosed herein is an alternative biomineralization approach for synthesizing metal chalcogenide nanocrystals which uses an artificially designed de novo protein. De novo proteins are non-natural proteins, allowing for facile modification of the protein through the tuning of amino acids within the sequence. This de novo protein was employed to produce size-controlled populations of semiconductor nanocrystals, with properties consistent with those produced using traditional routes.