78 results about "Semiconductor nanocrystals" patented technology

The invention relates to the technical field of design and application of two-dimensional materials, and discloses a design and simulation method of a two-dimensional semiconductor nanometer transistor, which comprises the following steps: collecting multi-source data of design and simulation of the two-dimensional semiconductor nanometer transistor, and screening through a data quality evaluation model to obtain a layered data structure; constructing and training a Bayesian neural network model; key influence parameters are identified through a multi-scale feature extraction algorithm and a parameter correlation analysis algorithm, and an attention algorithm is applied to pay attention to an important parameter combination; meanwhile, the uncertainty is predicted, a sampling point with the most information content is generated, and a prediction confidence interval is provided; through active learning feedback optimization circulation, high-value data points are selected based on prediction uncertainty for verification, and the model is updated until preset precision or resource constraint is achieved; according to the method, through multi-scale feature representation and parameter correlation analysis, invalid parameter exploration is reduced, and meanwhile, the model interpretability is improved through integrated physical constraint and uncertainty quantification.

A method for producing a semiconductor nanoparticle, a semiconductor nanoparticle, an electroluminescent device including the semiconductor nanoparticle, and a display device. In an embodiment, the method of an embodiment includes preparing a first semiconductor nanocrystal including zinc, tellurium, and selenium, wherein the preparing of the first semiconductor nanocrystal includes heating a first solution including a first zinc precursor, a first selenium precursor and a tellurium precursor in a first organic solvent at a reaction temperature to form a heated solution; and adding an additive to the heated first solution to produce the first semiconductor nanocrystal, wherein the additive includes a second selenium precursor and the additive does not include tellurium, and the semiconductor nanoparticle is configured to emit blue light.

A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

A quantum dot, a quantum dot-polymer composite, and an electronic device including the same. The quantum dot includes a core including a first semiconductor nanocrystal; a first shell including a second semiconductor nanocrystal including a Group III-VI compound on the core; and a second shell including a third semiconductor nanocrystal having a composition different from that of the second semiconductor nanocrystal on the first shell; wherein one of the first semiconductor nanocrystal and the third semiconductor nanocrystal includes a Group III-V compound.

A quantum dot having a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the surface of the core, the shell including zinc, selenium, and sulfur. The quantum dot is configured to emit green light, the quantum dot does not include cadmium, and the quantum dot has a mole ratio Te:Se of tellurium relative to selenium of greater than about 0.05 and less than or equal to about 0.5:1. A method of producing the quantum dot and an electronic device including the same.

The invention discloses an organic-inorganic composite solid electrolyte as well as a preparation method and application thereof. The solid electrolyte comprises polyethylene oxide, lithium salt and semiconductor nanocrystals. According to the invention, the semiconductor nanocrystal is used as an inorganic filler to be compounded with the PEO-based organic polymer solid electrolyte, the adjustability of the semiconductor nanocrystal component and structure and the flexibility of surface modification are utilized, the crystallization of PEO at normal temperature is obviously inhibited, and a high ionic conductance interface is formed. Through surface ligand modification, the semiconductor nanocrystal can obtain good dispersibility in a PEO matrix, so that dissociation and transmission of lithium ions in a lithium salt are effectively promoted, and the organic-inorganic composite solid electrolyte membrane has relatively high ionic conductivity. Through cladding treatment, the stability of the semiconductor nanocrystal in the PEO can also be remarkably improved. The solid electrolyte can effectively improve the ion transmission performance of the PEO-based solid electrolyte at the conventional working temperature of the lithium ion battery.

To provide a light emitting particle excellent in stability to water, light, and heat and including a nanocrystal and a method for producing the same, an ink composition including the light emitting particle and a phototransformation layer including a cured product of the ink composition, and a color filter provided with the phototransformation layer and a wavelength conversion film.SOLUTION: A light emitting particle comprises a surface layer including a structure having a siloxane linkage on a surface of a semiconductor nanocrystal composed of a metal halide, where the surface layer includes a salt having a univalent cation, the semiconductor nanocrystal is composed of a compound represented by a general formula AaMbXc, the A represents a specific cation, the M represents a specific metal ion, the X represents one or more halide ions selected from the group consisting of F, Cl, Br, and I, a represents a positive number of 1 to 7, b represents a positive number of 1 to 4, and c represents a positive number of 1 to 16.SELECTED DRAWING: None

A color conversion panel that includes a color conversion layer including one or more color conversion regions, and optionally, a partition wall defining the regions of the color conversion layer, and a display device including the same. The color conversion region includes a first region corresponding to a first pixel, and the first region includes a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide. The Group III-V compound includes indium, phosphorus, and optionally, zinc or gallium, or zinc and gallium, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures do not include cadmium. The luminescent nanostructures further include fluorine, and in the luminescent nanostructures, a mole ratio of fluorine to indium is greater than or equal to about 0.05:1.

Nanostructures including a first semiconductor nanocrystal including zinc and selenium, and a second semiconductor nanocrystal including a zinc chalcogenide, wherein a composition of the second semiconductor nanocrystal is different from a composition of the first semiconductor nanocrystal,wherein the nanostructures further include tellurium,wherein in the nanostructures, a mole ratio of selenium to tellurium is greater than or equal to about 0.83:1 and less than or equal to about 10:1,wherein a derivative thermogravimetry curve of the nanostructures has an extreme value in a temperature range of greater than or equal to about 250° C. and less than or equal to about 420° C.

The invention provides a semiconductor nanocrystalline population and a preparation method thereof. The crystal form of the semiconductor nanocrystal group is wurtzite single crystals, the semiconductor nanocrystal group comprises cadmium and selenium, and at least 85% of semiconductor nanocrystals in the semiconductor nanocrystal group do not have lattice stacking faults.

Light-emitting diode (100, 200) with several quantum dots (10), having the light-emitting diode (100, 200): a first electrode (110, 210) and a second electrode (120, 220); an emitting material layer (150, 250); an electron transfer layer (164, 244); and a hole transfer layer (144, 264), wherein the emitting material layer (150, 250) is arranged between the electron transfer layer (164, 244) and the hole transfer layer (144, 264) and the emitting material layer (150, 250) has the quantum dots (10), where the quantum dots exhibit (10): a semiconductor nanocrystal or metal oxide core (20); a shell (30) covering the semiconductor nanocrystal or metal oxide core (20), wherein the shell (30) has an outer surface; an X-type ligand (42) having a functional group selected from the group consisting of a carboxylate group, a phosphate group and a thiolate group, which is bonded to a first region of the outer surface; and an L-type ligand (44) having a functional group selected from the group consisting of an amino group, a thiol group, a phosphine group and a phosphine oxide group, which is bonded to a second region of the outer surface, wherein the X-type ligand (42) is bound to the first region of the outer surface by a negatively charged functional group, and the L-type ligand (44) is bound to the second region of the outer surface by an undivided electron pair, wherein a multitude of the first regions of the outer surfaces of the quantum dots (10) are proximal to the hole transfer layer (144, 264) and distal to the electron transfer layer (164, 244), wherein a multitude of the second regions of the outer surfaces of the quantum dots (10) are proximal to the electron transfer layer (164, 244) and distal to the hole transfer layer (144, 264), and where the outer surface is spherical and the first area is a first hemisphere and the second area is a second hemisphere.

Provided is a quantum dot having a core-shell structure, wherein a core includes a first semiconductor nanocrystal including zinc, tellurium, and selenium, and a semiconductor nanocrystal shell is disposed on the core and includes a Group II-VI compound, wherein the quantum dot further includes phosphorus and fluorine, and the quantum dot does not include cadmium.

A cadmium free quantum dot or a population thereof or a device including the same, wherein the cadmium free quantum dot includes a core (or a semiconductor nanocrystal particle) including a first semiconductor including a Group IIB-VI compound and a shell (or a coating) disposed on the core (or the semiconductor nanocrystal particle) including a Group IIB-V compound and exhibits a quantum efficiency of about 60% or higher.

The invention relates to a quantum dot. The quantum dot includes: a core including a first semiconductor nanocrystal; a first shell around (e.g., around) the core and comprising a second semiconductor nanocrystal different from the first semiconductor nanocrystal; and a second shell surrounding the first shell (e.g., around the first shell) and comprising a third semiconductor nanocrystal different from the first semiconductor nanocrystal and the second semiconductor nanocrystal, where the core has a band gap of about 1.5 eV to about 3.3 eV, the second shell having a band gap greater than the band gap of the core, and about 3.54 eV or less, and a band gap of the first shell is greater than the band gap of the core and less than the band gap of the second shell.

The present invention relates to core-shell quantum dots, methods for making the same, quantum dot groups, quantum dot composites, quantum dot compositions, and display devices. Disclosed are core-shell quantum dots and their manufacture, the core-shell quantum dots comprising: a core comprising a first semiconductor nanocrystal, the first semiconductor nanocrystal comprising zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell comprising zinc, and selenium, sulfur, or a combination thereof, wherein the core-shell quantum dots do not include cadmium, lead, mercury, or a combination thereof, wherein the core-shell quantum dots comprise chlorine, wherein in the core-shell quantum dots, the molar ratio of chlorine to tellurium is greater than or equal to about 0.01:1, and wherein the quantum efficiency of the core-shell quantum dots is greater than or equal to about 10%.

A method of manufacturing a semiconductor nanoparticle, a semiconductor nanoparticle manufactured thereby, an electronic device including the semiconductor nanoparticle, and a method of manufacturing the electronic device. The method of manufacturing the semiconductor nanoparticle includes: combining, in a medium including an organic solvent, a first semiconductor nanocrystal including silver, a Group 13 element, and a chalcogen element, or a first particle including the first semiconductor nanocrystal; a sulfur precursor; and a gallium precursor; and heating the medium to a reaction temperature to form a second semiconductor nanocrystal including sulfur and gallium on the first semiconductor nanocrystal or the first particle. The method further includes adding an acid compound to the medium, and the acid compound has a dipole moment of greater than or equal to about 2 debye and less than or equal to about 5 debye.

A semiconductor nanoparticle, a method for preparing the semiconductor nanoparticle, an ink composition including the semiconductor nanoparticle, an electroluminescent device, and a display device including the semiconductor nanoparticle. The semiconductor nanoparticle is configured to emit light and includes a semiconductor nanocrystal and a semiconductor nanocrystal layer including zinc and sulfur. The semiconductor nanoparticle further includes a first compound and a second compound. The first compound includes a first functional group and an aromatic hydrocarbon group or an aliphatic hydrocarbon group having a terminal double bond. The second compound includes a second functional group and an aliphatic hydrocarbon group. The first functional group and the second functional group each independently include a carboxylic acid or its anion.

The present invention provides a CdSe / ZnSe magic number cluster, a preparation method and a use thereof, belonging to the technical field of semiconductor luminescent materials. The CdSe / ZnSe magic number cluster of the present invention is a magic number cluster with a core-shell structure, the CdSe magic number cluster is the core, and a layer of ZnSe is coated on the outside as the shell; the emission wavelength of the CdSe / ZnSe magic number cluster is 450-465 nm, and the full width at half maximum is less than 15 nm. In the present invention, a ZnSe induction period sample is added to the CdSe magic number cluster, and the precursor compound of ZnSe is decomposed into ZnSe monomers, and the ZnSe monomers coat the surface of the CdSe magic number cluster to form a CdSe / ZnSe magic number cluster. The CdSe / ZnSe magic number cluster of the present invention is carried out at 25 °C, and this process will not cause the emission peak of the nanocluster to redshift, ensuring the purity of the blue light. The CdSe / ZnSe magic number cluster provided by the present invention is a blue light emitting material with an emission wavelength at 450-465 nm, a full width at half maximum less than 15 nm, and defect-free state luminescence, providing a possibility for the application of II-VI group semiconductor nanocrystals in optoelectronic devices.

A cadmium free quantum dot including a core including a first semiconductor nanocrystal, and a semiconductor nanocrystal shell disposed on the core, a composition of the semiconductor nanocrystal shell being different from a composition of the first semiconductor nanocrystal, a production method thereof, and a device including the same are disclosed. The semiconductor nanocrystal shell includes a zinc chalcogenide, the zinc chalcogenide includes selenium, tellurium, sulfur, or a combination thereof, and the quantum dot further alkaline an alkaline earth metal.

A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

Disclosed are quantum dots, methods for manufacturing the same, and electroluminescent devices and electronic devices comprising the same, wherein the quantum dots include: a core including a first semiconductor nanocrystal, and a semiconductor nanocrystal shell disposed on the core, wherein the composition of the semiconductor nanocrystal shell is different from the composition of the first semiconductor nanocrystal. The quantum dots do not include cadmium, the semiconductor nanocrystal shell includes zinc chalcogenide, the zinc chalcogenide includes selenium, tellurium, sulfur, or a combination thereof, and the quantum dots further include alkaline alkaline earth metals.

A core-shell type quantum dot comprising, a semiconductor nanocrystal core including at least In and P, and having group III-V elements as constituent elements and a single or a plurality of semiconductor nanocrystal shells having group II-VI elements as constituent elements covering the semiconductor nanocrystal core, wherein a buffer layer comprising semiconductor nanocrystals having group II-V elements as constituent elements is included between the semiconductor nanocrystal core and the semiconductor nanocrystal shell. As a result, quantum dots using group II-V semiconductor nanocrystals as a core and having improved fluorescence emission efficiency are provided.

The present invention comprises: a method for preparing nanocrystals; ITO nanocrystals and a core-shell-structured FITO as products using same; and a method for preparing and depositing FITO nanocrystals that can be deposited in a single layer. According to the present invention, the method for preparing ITO nanocrystals comprises a step of highly-efficiently preparing ITO nanocrystals by using a mixture comprising indium acetate and a tin compound, and a method for preparing a core-shell-structured FITO coats FITO core particles with indium, thereby producing stable FITO nanocrystals having high durability even in extreme environments. In addition, the method for depositing FITO comprises injecting FITO on a polar solution so as to implement uniform monolayer deposition through phase separation and self-assembly, thereby enabling precise fine patterning. Therefore, the present invention efficiently produces a high-performance nanomaterial, thereby providing a technical advantage suitable for various industrial applications such as smart windows, highly durable materials and precision electronic and optical devices.

There is provided a film, comprising: a layer of packed semiconductor nanocrystals, and a matrix material comprising at least one metal oxide, wherein the matrix material encapsulates the semiconductor nanocrystals. Further provided are a method for producing a film, and an optoelectronic device.

A method of manufacturing a semiconductor nanoparticle, a semiconductor nanoparticle, an electroluminescent device including the semiconductor nanoparticle, and a display device. In an embodiment, a method of an embodiment includes: preparing a first semiconductor nanocrystal including zinc, tellurium, and selenium, where the preparation of the first semiconductor nanocrystal includes heating a first solution including a first zinc precursor, a first selenium precursor, and a tellurium precursor in a first organic solvent at a reaction temperature to form a heated solution; and adding an additive to the heated first solution to produce the first semiconductor nanocrystal, where the additive includes a second selenium precursor and the additive does not include tellurium, and the semiconductor nanoparticles are configured to emit blue light.

A method of manufacturing a semiconductor nanoparticle, the semiconductor nanoparticle manufactured therefrom, and an electronic device including the semiconductor nanoparticle. The method of manufacturing the semiconductor nanoparticle includes combining a first semiconductor nanocrystal that includes silver, a Group 13 element, and a chalcogen element, with a gallium precursor, a sulfur precursor, and a silver compound in a medium including an organic solvent; and heating the medium to a reaction temperature to obtain a crude solution including the semiconductor nanoparticles. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, and the size is greater than or equal to about 2 nm and less than or equal to about 50 nm.

A nanoparticle, a method of manufacturing the nanoparticle, a composition including the nanoparticle, a composite including a matrix and a plurality of nanoparticles dispersed in the matrix, a display device including the nanoparticle, and an electronic device including the nanoparticle. The nanoparticle includes a semiconductor nanocrystal including zinc, indium, and selenium. In the semiconductor nanocrystal, a mole ratio of indium to selenium (In:Se) is greater than or equal to about 0.1:1 and less than or equal to about 0.5:1. The nanoparticle does not include cadmium, and the nanoparticle is configured to emit a first light. A peak emission wavelength of the first light is greater than or equal to about 480 nanometers and less than or equal to about 700 nanometers.

A quantum dot composite, a color filter and a display device including the quantum dot composite, and a quantum dot composition are provided. The quantum dot composite includes: a matrix; and a plurality of quantum dots dispersed in the matrix, wherein the plurality of quantum dots include a semiconductor nanocrystal core containing indium and phosphorus and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, and the semiconductor nanocrystal shell includes zinc, selenium, and sulfur. The plurality of quantum dots have an arithmetic size of approximately 8 nm or greater, wherein the quantum dot composite is configured to emit red light, and wherein when the quantum dot composite is irradiated with light having a wavelength of approximately 450 nm to approximately 470 nm for a period of approximately 500 hours or less, the luminance of the quantum dot composite increases by less than or equal to approximately 1.2% of the initial luminance of the quantum dot composite.

This invention relates to nanocrystals and methods for manufacturing semiconductor nanocrystals.

Thermoelectric (TE) nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected interpenetrating networks including nanocrystalline networks. The TE nanocomposite material can be in the form of a bulk solid having semiconductor nanocrystallites that form an electrically conductive network within the material. In other embodiments, the TE nanocomposite material can be a nanocomposite thermoelectric material having one network of p-type or n-type semiconductor domains and a low thermal conductivity semiconductor or dielectric network or domains separating the p-type or n-type domains that provides efficient phonon scattering to reduce thermal conductivity while maintaining the electrical properties of the p-type or n-type semiconductor.