10 results about "Band offset" patented technology

A device (e.g., a decoder) may receive a band-based attenuation indication. The device may obtain attenuation information associated with a coding tree block according to the band-based attenuation indication. The device may apply the attenuation information to a picture, the picture including the coding tree block. In an example, the band-based attenuation indication may be received in a header associated with the coding tree block. The band-based attenuation indication may indicate a band offset parameter associated with the attenuation information. In some examples, the device may receive a plurality of band-based attenuation indications. For example, the first band-based attenuation indication may indicate a band position parameter. The second band-based attenuation indication may indicate a band offset value parameter. In an example, the attenuation information may include a pixel level attenuation map (PWAM). The device may generate a band-based attenuation map (BAM) according to the band-based attenuation indication, and obtain the PWAM based on the BAM.

An example method of video coding includes, when an edge offset mode is disabled for a current image frame of video data and a band offset mode is enabled for the current image frame, generating one or more quantized values for a first color component based on one or more samples of a second color component, the one or more samples including a first sample of the second color component collocated with a first color sample of the first color component in the current image frame. The example method also includes determining a first sample offset for the first color component by classifying the first color sample of the current image frame based on the one or more quantized values. The example method further includes adjusting the first color sample based on the first sample offset.

Various implementations described herein include methods and systems for coding video. In one aspect, a video bitstream includes a current image frame and a first syntax element. The first syntax element has a first predefined value that indicates that the band offset only mode is enabled to determine a first sample offset of a first color sample based on luma samples, independently of any associated luma gradient of the luma samples. When the band offset only mode is enabled, quantized values are generated based on the luma samples including a first luma sample collocated with the first color sample. A first color sample is classified based on the quantized values to determine the first sample offset of the first color sample. The current image frame is reconstructed at least by adjusting the first color sample based on the first sample offset.

This invention relates to a complementary silicon carbide semiconductor device comprising an N-channel MOSFET and a P-channel HFET, and its fabrication method, belonging to the field of semiconductor device technology. The device includes a semiconductor substrate, with a first semiconductor layer disposed on top of the substrate. A locally doped region is disposed within one side of the first semiconductor layer, containing a bulk contact region and a diffusion contact region, forming an NMOS region. A second semiconductor layer is disposed above the other side of the first semiconductor layer, and a two-dimensional hole gas layer is formed at the heterojunction interface between the second and first semiconductor layers, forming a p-channel HFET region. This invention utilizes the bandgap difference between 3C-SiC and 4H-SiC to construct a heterojunction quantum well, inducing a high-mobility two-dimensional hole gas layer, thereby significantly improving the carrier transport efficiency of the P-channel device and achieving monolithic integration of a high-performance complementary device.

A method is provided that includes: traversing all reconstructed pixels in a coding tree block, calculating a band value of each traversed reconstructed pixel, and calculating a residual value between each traversed reconstructed pixel and a corresponding original pixel; storing the calculated band value of each reconstructed pixel in a first array, and storing the calculated residual value between each reconstructed pixel and the corresponding original pixel in a second array; determining whether m consecutive band values in the first array belong to a same band; and in response to determining that the m consecutive band values in the first array belong to the same band, calculating, based on a residual value in the second array, a cumulative residual value of m reconstructed pixels corresponding to the m consecutive band values, and calculating a cumulative number of the m reconstructed pixels.

The invention discloses a PHEMT (Pseudomorphic High Electron Mobility Transistor) device, which comprises a GaAs substrate; the AlGaAs lower potential barrier layer is arranged on the GaAs substrate; the InGaAs channel layer is stacked on the AlGaAs lower potential barrier layer; the perovskite enhancement layer is stacked on the InGaAs channel layer; the AlGaAs upper potential barrier layer is laminated on the perovskite enhancement layer; and the GaAs ohmic contact layer is laminated on the AlGaAs upper potential barrier layer. The PHEMT device and the manufacturing method thereof at least have one of the following advantages: 1, the perovskite enhancement layer and the InGaAs channel layer form a staggered energy band structure to generate energy band offset, so that a built-in electric field is generated and electron limitation is enhanced; 2, the perovskite enhancement layer can reduce the interface dislocation density and improve the channel two-dimensional electron gas mobility; 3, due to the defect passivation effect of the perovskite enhancement layer, the interface state density can be reduced, and carrier scattering can be inhibited; and 4, the perovskite enhancement layer can restrain the deep energy level defect in the AlGaAs, so that the performance of the device can be maintained at 200 DEG C.

The application discloses a p-type nitride layer, a preparation method thereof and a nitride semiconductor device. The p-type nitride layer comprises a front layer, an intermediate layer and a rear layer, the doping concentration of Si elements in the front layer decreases; a plurality of composite microstructures are arranged at the interface between the front layer and the intermediate layer, the composite microstructures comprise nanocolumnar bodies and top microstructures, and have differentiated height distribution; the nanocolumnar bodies comprise Si nanocolumns and SiN dielectric layers, and the material of the top microstructures comprises AlN. The application utilizes the polarization effect between the plurality of composite microstructures with different heights and the intermediate layer to generate a huge energy band offset, forms a high-concentration two-dimensional hole gas near the interface, increases the hole concentration in the nitride intermediate layer, greatly improves the hole injection efficiency, and further improves the working efficiency of the device, reduces the working voltage, and significantly reduces various negative effects under a large-current working condition.

The application relates to the field of high-dynamic aircraft TT&C (Telemetry, Tracking and Command), and discloses a Ka-band offset-fed multi-beam receiving array which comprises a feed source switching plate, a multi-channel frequency conversion component, a digital component, a liquid cooling heat sink, a local oscillator shunt and a clock / synchronous signal shunt, etc. The 480 offset-fed beams realize 5*5 spatial range coverage; the multi-channel frequency conversion component realizes filtering, amplification, selection and down-conversion of multi-feed source receiving signals; after the intermediate frequency signals are digitized by the digital component, the signals are sent to a baseband for signal detection; meanwhile, according to the signal detection result, the strongest beam and the three secondary strongest beam data around the strongest beam are selected to perform offset-fed telemetry signal synthesis, thereby prolonging the system telemetry signal receiving time. While completing offset-fed target capture and guidance, the application can complete real-time receiving of offset-fed telemetry signals, thereby prolonging the system telemetry signal receiving time. The integrated design among the modules does not exist interconnection cables, and the integrated degree is high, the reliability is high, the anti-interference capability is strong, and the maintenance is convenient.

The invention relates to the field of radar cross section data processing and target feature modeling, and particularly discloses an iterative optimization method of a pedestrian RCS data matrix, which comprises the following steps of: forming a four-dimensional tensor M0 and marking a missing voxel; screening an anchor point set omega according to repetition consistency, neighborhood consistency and signal-to-noise indexes, endowing observation Y and initializing credibility W0; iteratively calculating an anchor point residual error, extracting a distance ring band offset priori B, judging a stripe tendency and an outlier tendency, and carrying out multiplicative updating on the credibility of the anchor point; diffusion is carried out under offset gating and structure gating modulation to form a credibility field, credibility weighted consistency is adopted to solve and complement update Mt, convergence or frequency upper limit output optimization tensor M * and a confidence graph W * are met, and annulus energy consistency, azimuth period closing and complementation reliability are improved.

The invention provides a GaN HEMT (High Electron Mobility Transistor) capable of inhibiting a Fe doping wake effect and a preparation method of the GaN HEMT. The preparation method comprises the following steps: sequentially growing an AlN nucleating layer and a Fe-doped GaN buffer layer on a substrate; alternately growing single-layer AlN and single-layer GaN on the GaN buffer layer for multiple times to obtain an AlN / GaN superlattice lamination layer; and sequentially growing a GaN channel layer and an AlGaN barrier layer on the AlN / GaN superlattice lamination layer. According to the AlN / GaN superlattice lamination layer, through periodic lattice strain and energy band offset, multiple potential barriers are formed, and diffusion of Fe atoms is effectively inhibited. Meanwhile, stress oscillation at the superlattice interface can promote dislocation to react and combine, so that dislocation density is reduced, and crystal integrity and breakdown voltage of the material are improved.