Patents
Literature
Patsnap Eureka AI that helps you search prior art, draft patents, and assess FTO risks, powered by patent and scientific literature data.

32 results about "Valence band" patented technology

In solids, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature. The valence electrons are bound to individual atoms, as opposed to conduction electrons, which can move freely within the atomic lattice of the material. On a graph of the electronic band structure of a material, the valence band is located below the conduction band, separated from it in insulators and semiconductors by a band gap. In metals, the conduction band has no energy gap separating it from the valence band.F To understand the concept of a valence band, it is important to consider the atomic structure of a metal first. For example lithium atoms with electronic configuration 1s²2s¹ can form only one covalent bond. However, when forming a bulk metal, Li atoms come to a resonance structure by taking 1 electron from its neighbouring Li atom and the resultant electronic configuration becomes 1s²2s¹2p¹. As a result of this electron sharing, its neighbouring Li atom loses an electron and comes to an electronic configuration of 1s². The Li atoms now gain the capability to form two covalent bonds thus can form a bulk metal.

Layered structure, method for manufacturing the same, device, and particle dispersion.

This provides a structure that exhibits a high degree of balance between durability, conductivity, and quantum efficiency. [Solution] A layered structure comprising a substrate and a high-density particle layer on the substrate, wherein the high-density particle layer contains nanoparticles with an inorganic film formed on its surface, the nanoparticles having a particle size of 1 nm to 50 nm, the high-density particle layer having a packing density of nanoparticles per unit volume of 30 vol% to 80 vol%, the inorganic film having a thickness of 0.1 nm to 5 nm, the energy level at the upper end of the valence band of the inorganic film being the same as or lower than the energy level at the upper end of the valence band of the nanoparticles, and the energy level at the lower end of the conduction band of the inorganic film being the same as or higher than the energy level at the lower end of the conduction band of the nanoparticles.
Owner:DEXERIALS CORP

A GaN-based light emitting diode epitaxial structure and a preparation method thereof

PendingCN122373559AValence bandElectron hole
This invention provides a GaN-based light-emitting diode epitaxial structure and its fabrication method. By introducing a Zn source as a surface activator throughout the growth process of the P-type AlGaN electron blocking layer, a P-type AlGaN electron blocking layer structure with a gradient distribution of Zn concentration along the direction of the P-type AlGaN electron blocking layer is constructed. Specifically, through the core role of the Zn surface activator and the innovative design of the Zn concentration gradient distribution, a smooth rise in the conduction band Ec and no loss of strong electron blocking capability are achieved, while ensuring that the valence band Ev is smooth and without spikes throughout and that hole injection is unimpeded throughout.
Owner:JIANGXI ZHAO CHI SEMICON CO LTD

Application of Bi2O2Se in photocatalytic nitrogen fixation reaction

PendingCN122102162APhysical/chemical process catalystsSelenium/tellurium compundsAir atmospherePtru catalyst
The application relates to application of Bi2O2Se in a photocatalytic nitrogen fixation reaction and belongs to the technical field of photocatalytic nitrogen reduction. The BOS catalyst with intrinsic weak hole oxidation capacity realizes efficient and stable photocatalytic ammonia synthesis without a sacrificial agent. The BOS has an optimized narrow band gap structure and a unique straddling energy band arrangement, the valence band position is shallow, the hole oxidation capacity is weak, the oxidation degradation of NH4 + Can be effectively inhibited, and the conduction band position is suitable, so that the thermodynamic driving force of nitrogen reduction is ensured. The catalyst has excellent light absorption capacity in a wide spectral range (extending to the near-infrared region), and the apparent quantum efficiency reaches 0.12% at a wavelength of 700 nm. The ammonia synthesis rate of the BOS without a sacrificial agent reaches 61 muM.h ‑1 -1, which is 8.3 times and 2.8 times that of carbon nitride and cadmium sulfide, and the catalyst maintains high activity in an air atmosphere, has excellent oxygen compatibility and cycle stability.
Owner:UNIV OF SCI & TECH BEIJING

A semiconductor defect detection device and a detection method

PendingCN122345598AValence bandPhotoluminescence
This application discloses a semiconductor defect detection device and method, relating to the field of semiconductor defect detection technology. When detecting defects in a semiconductor sample, a first light source component emits a pulsed laser with photon energy greater than the bandgap of the semiconductor sample, exciting a first photoluminescence signal. Then, while maintaining the first light source component's pulsed laser emission, a second light source component emits a continuous laser with photon energy equal to the energy interval between the energy level and valence band of the target deep-level defect within the semiconductor sample, exciting a second photoluminescence signal. Based on these two photoluminescence signals, defect information of the semiconductor sample can be obtained. A synchronous optical path calibration module is used to detect the focused spot positions of the pulsed laser and the continuous laser on the surface of the semiconductor sample in real time, ensuring that the offset between the two focused spots is less than a preset threshold. This effectively reduces detection errors caused by spot offset and improves detection accuracy.
Owner:WUXI HUAXING OPTOELECTRONICS RES CO LTD +1

A high-performance deep ultraviolet light-emitting device and its fabrication method

PendingCN122094250AValence bandQuantum well
This invention discloses a high-performance deep ultraviolet (DUV) light-emitting device and its fabrication method, belonging to the field of semiconductor epitaxial growth technology. This invention constructs a synergistic mechanism combining pre-formed compressive stress and restricted thinning to fabricate an ultrathin quantum well and introduce effective compressive stress. This achieves bandgap modulation to enhance the TE polarization emission ratio of the quantum well, solving the technical challenge of balancing quantum well stress introduction and structural stability in existing DUV light-emitting devices. The second superlattice layer subjects the subsequently epitaxial quantum well to controlled external compressive stress during growth. The ultrathin quantum well formed through controlled thinning exhibits enhanced quantum confinement effects, which, in synergy with the pre-formed compressive stress, shift the energy order of the valence band top state towards a direction favorable to TE transitions, thereby effectively suppressing the TM component and significantly increasing the TE emission ratio. This invention provides a feasible fabrication basis for the application of DUV light-emitting devices in fields such as ultraviolet disinfection, medicine, environmental monitoring, and precision optics.
Owner:PEKING UNIV

Capacitor comprising a stack of layers made of a semiconductor material having a wide bandgap

A capacitor comprises a stack of layers made of a semiconductor material having a band gap energy greater than 2.3 eV, the stack of layers comprising: an electrically insulating intermediate layer having a resistivity greater than 10 kohm·cm and comprising n- or p-type deep dopants producing energy levels more than 0.4 eV from the conduction band or the valence band of the semiconductor material, two contact layers having a resistivity less than or equal to 10 kohm·cm and comprising dopants of a type opposite to that of the deep dopants of the intermediate layer, the two contact layers being arranged on either side of the intermediate layer to form two pn junctions.
Owner:INSTITUT NAT POLYTECHN DE GRENOBLE +2

CoP / Bi4TaO8Cl composite material, preparation method and application thereof

The present application relates to a kind of load CoP / Bi4TaO8Cl composite material, the composite material is made of layered Bi4TaO8Cl and cobalt phosphide nanoparticles composite, the layered Bi4TaO8Cl is carrier, the cobalt phosphide nanoparticles are loaded on the surface of carrier, form CoP / Bi4TaO8Cl heterojunction structure.Compared with the prior art, the present application selects Cl ‑ Based Bi4TaO8Cl as carrier.Compared with Br ‑ , Cl ‑ With stronger electronegativity, and Ta 5+ , Bi 3+ In the lattice, it is more firmly combined, so as to give the carrier higher structural stability.More importantly, this change makes Bi4TaO8Cl have more positive potential valence band top, and the photo-generated hole has stronger oxidation ability, and provides more sufficient and fundamental driving force for high-energy barrier water oxidation reaction (OER) in thermodynamics.
Owner:SHANGHAI INST OF TECH

Two-dimensional Janus material and energy level parameter prediction method and device thereof

The application provides a two-dimensional Janus material and an energy level parameter prediction method and device thereof, a mother body and a Janus material crystal structure are constructed into a graph structure, after improving node / edge features, local information is aggregated through a graph attention network with edge embedding, global attention mechanism is used to obtain graph-level embedding, then difference features are obtained by subtracting the two embeddings, and a multilayer perception machine is used to predict a conduction band bottom offset, a valence band top offset and a vacuum energy level difference, in addition, a multi-task weighted loss optimization model is used. The application uses differential learning of the mother body-Janus pairing, reduces the calculation cost, improves the prediction accuracy and generalization ability, can realize high-throughput screening, and supports Janus material energy band engineering design.
Owner:NANCHANG CAMPUS OF JIANGXI UNIV OF SCI & TECH

A Cu2O / SiC / g-C3N4 ternary composite material, its preparation method and application

The application provides a Cu2O / SiC / g-C3N4 ternary composite material and a preparation method and application thereof, and relates to the technical field of catalysts.The p-n junction is constructed between Cu2O and g-C3N4, and the Z-scheme heterojunction is constructed between Cu2O and SiC, the two mechanisms synergistically act, can effectively promote the separation of electrons and holes from the Cu2O photocatalyst, form an equivalent wide band gap, fully utilize the strong oxidizing property of the valence band of SiC and the strong reducing property of the conduction band of Cu2O, thereby greatly improving the photocatalytic performance;the proportion of the Cu2O / SiC / g-C3N4 ternary composite material prepared by the application as a photocatalyst in degrading methyl orange water pollutants within 110min can reach 93.70%.The preparation method of the application can realize the compounding of the three materials by adopting two simple processes of calcination and hydrothermal treatment, has the advantages of less raw materials, simple synthesis process and good repeatability, also has the basic conditions of large-scale production, and higher application potential and use value.
Owner:ANHUI ACAD OF ECOLOGICAL & ENVIRONMENTAL SCI

Complementary metal-oxide-semiconductor field effect device

PendingUS20260182018A1CMOSValence band
The disclosed technology relates to a complementary metal-oxide-semiconductor (CMOS) field effect device comprising a substrate; a first n-doped S / D region and a second n-doped S / D region; a first p-doped S / D region and a second p-doped S / D region; a first channel layer arranged above the substrate, the first channel layer comprising: a first sub-layer and a second sub-layer; wherein the first and second n-doped S / D regions are arranged at a first lateral side of the first channel layer, and the first and second p-doped S / D regions are arranged at a second lateral side of the first channel layer, the second lateral side being opposite to the first lateral side; wherein a conduction band edge of the first sub-layer has an energy below a conduction band edge of the second sub-layer; and wherein a valence band edge of the first sub-layer has an energy below a valence band edge of the second sub-layer; and a gate structure formed over one or more surfaces of the first and second sub-layers of the first channel layer.
Owner:INTERUNIVERSITAIR MICRO ELECTRONICS CENT (IMEC VZW)

Photovoltaic device and method of manufacturing the same, power consuming device and power generating device

PendingCN122161263APhotovoltaic energy generationValence bandConduction band
The application relates to a photovoltaic device and a preparation method thereof, and an electricity-using device and a power generation device. The photovoltaic device comprises an electron transport layer, a perovskite layer and a hole transport layer which are arranged in a stack, the perovskite layer is located between the electron transport layer and the hole transport layer; the perovskite layer comprises a perovskite material; the perovskite layer has a first surface facing the electron transport layer and a second surface facing the hole transport layer; the perovskite layer has a first region near the first surface and a second region near the second surface, the first region is located between the first surface and the second region; the Fermi level of the perovskite material in the first region is closer to the conduction band bottom, and the Fermi level of the perovskite material in the second region is closer to the valence band top; in the first region, the energy level difference (J1) between the conduction band bottom and the Fermi level of the perovskite material, and the energy level difference (J2) between the Fermi level and the valence band top satisfy J2-J1>=0.3eV. The photovoltaic device has improved device efficiency.
Owner:CONTEMPORARY AMPEREX TECHNOLOGY CO LTD

A z-type zn tcpp / zis heterojunction catalyst and a preparation method and application thereof

PendingCN122298506AHeterojunctionPtru catalyst
This invention discloses a Z-type ZnTCPP / ZIS heterojunction catalyst, its preparation method, and its application, belonging to the field of photocatalysis technology. The process includes the following steps: Step S1, synthesizing a zinc porphyrin metal-organic framework (Zn-TCPP); Step S2, dissolving Zn-TCPP, zinc salt, indium salt, and a sulfur source in water, stirring until homogeneous, and then performing a solvothermal reaction; Step S3, after the reaction is complete, cooling to room temperature, centrifuging, washing, and drying to obtain the Z-type ZnTCPP / ZIS heterojunction catalyst. Photogenerated electrons on the ZnIn2S4 conduction band recombine with photogenerated holes on the ZnTCPP valence band at the interface, while the electrons retained on the ZnTCPP conduction band and the holes on the ZnIn2S4 valence band possess strong reducing and oxidizing abilities, respectively. This forms a built-in electric field from ZnTCPP to ZnIn2S4, and the unique charge transfer path promotes the spatial separation of photogenerated carriers, effectively suppressing bulk recombination of electron-hole pairs, and significantly improving charge separation efficiency and photocatalytic activity.
Owner:HARBIN INSTITUTE OF TECHNOLOGY (SHENZHEN) (INSTITUTE OF SCIENCE AND TECHNOLOGY INNOVATION HARBIN INSTITUTE OF TECHNOLOGY SHENZHEN)

Atomic potential well functional device

PendingCN122091298ARadiation/particle handlingPotential wellParticle physics
The invention discloses an atomic potential well functional device, and relates to the field of micro-nano particle control. The device adopts a two-dimensional film including but not limited to crystal ceramic, amorphous glass or a rigid structure, a natural potential well is formed by valence band gaps, functional atoms or ions are embedded and stably restrained, and control over the atoms or ions is achieved in combination with an electric field, a magnetic field or a light field. And the method can be applied to scenes such as data operation, energy storage, data storage, precision sensing, micro-nano driving, energy capture, imaging display and the like. The device is simple in structure and stable in work, solves the problem that an existing scheme is insufficient in precision and sensitivity, and is wide in application prospect.
Owner:孙强

Semiconductor devices and their fabrication methods, electronic devices

ActiveCN117529818BValence bandDevice material
This application provides a semiconductor device and its fabrication method, as well as an electronic device, relating to the field of semiconductor technology, capable of reducing the subthreshold swing of transistors. The semiconductor device includes a transistor. The transistor includes a channel, a source, and a drain; the source and drain are disposed at opposite ends of the channel; a first intercalation layer is disposed between the source and the channel, and the first intercalation layer is in contact with both the source and the channel. The channel is made of a lightly doped semiconductor or an intrinsic semiconductor. The drain is made of a heavily doped semiconductor. The source is made of a P-type heavily doped semiconductor; wherein, the first intercalation layer is made of a high work function material, and the Fermi level of the high work function material is no more than 1 / 3 of the band gap of the channel semiconductor; or, the source is made of an N-type heavily doped semiconductor; the first intercalation layer is made of a low work function material, and the Fermi level of the low work function material is no more than 1 / 3 of the band gap of the channel semiconductor.
Owner:HUAWEI TECH CO LTD

S-type heterojunction photocatalyst and preparation method and application thereof

The present application relates to a novel S-type heterojunction photocatalyst and its preparation method and application, and belongs to the technical field of photoelectric catalysts. The photocatalyst is composed of two-dimensional transition metal sulfide ReS2 and perovskite quantum dots CsPbBr3 with a molar ratio of 10:1 to 25:1. By measuring and calculating the conduction band and valence band positions of ReS2 and CsPbBr3, it is confirmed that they can form an S-type heterojunction structure. Compared with pure perovskite point quantum CsPbBr3, the size of CsPbBr3 in the photocatalyst is reduced, which is beneficial to increase the specific surface area of the catalyst, thereby providing more reactive sites for photocatalytic reaction. When used for photocatalytic conversion of CO2 to CO, the yield of CO is as high as 25.67 μmol / g·h. The excellent photocatalytic property makes it have good application prospect in solving the environmental problems caused by excessive emission of CO2. In addition, its preparation method is simple and suitable for large-scale production.
Owner:CHINA BUILDING MATERIALS ACADEMY CO LTD

A light emitting diode having a convex barrier widening electron blocking layer structure

PendingCN122458566AValence bandElectron hole
The application discloses a light emitting diode with convex barrier widening electron blocking layer structure, which comprises a GaN buffer layer, an undoped GaN layer, an n-type GaN layer, a multi-quantum well light emitting layer, an electron blocking layer and a p-type GaN layer which are sequentially grown on a substrate. The electron blocking layer is a convex barrier widening structure, which comprises a first AlGaN layer, a second AlGaN layer and a third AlGaN layer from bottom to top, and the Al component of the second AlGaN layer is higher than that of the first AlGaN layer and the third AlGaN layer. The convex barrier widening electron blocking layer can improve the height of the conduction band electron barrier and reduce the height of the valence band hole barrier, thereby enhancing the electron blocking ability, improving the hole injection efficiency and significantly improving the output optical power of the light emitting diode.
Owner:ANHUI UNIV

Complementary metal-oxide-semiconductor (CMOS) field effect devices

PendingCN122269795AIncrease drive currentSmall driving currentCMOSValence band
The present application provides a complementary metal oxide semiconductor (CMOS) field effect device, comprising a substrate; a first n-type doped S / D region and a second n-type doped S / D region; a first p-type doped S / D region and a second p-type doped S / D region; a first channel layer disposed above the substrate, the first channel layer comprising a first sub-layer and a second sub-layer; wherein the first and second n-type doped S / D regions are disposed on a first side of the first channel layer, and the first and second p-type doped S / D regions are disposed on a second side of the first channel layer, the second side being opposite to the first side; wherein an energy of a conduction band edge of the first sub-layer is lower than an energy of a conduction band edge of the second sub-layer; and wherein an energy of a valence band edge of the first sub-layer is lower than an energy of a valence band edge of the second sub-layer; and a gate structure adjacent to the first sub-layer and the second sub-layer of the first channel layer.
Owner:INTERUNIVERSITAIR MICRO ELECTRONICS CENT (IMEC VZW)

A phenothiazine SAM molecule, a hole transport layer, a perovskite solar cell and a preparation method thereof

The present application relates to the technical field of perovskite solar cells, in particular to a phenothiazine SAM molecule, a hole transport layer, a perovskite solar cell and a preparation method thereof, and the core lies in designing a novel phosphoric acid-based self-assembled monolayer (SAM) based on a phenothiazine structure, using a mixed SAM system to prepare a high-efficiency trans perovskite solar cell. The phenothiazine SAM has unique energy level characteristics and a suitable dipole moment, and by mixing with a carbazole-based phosphoric acid SAM, the energy level of the hole transport layer (SAM layer) can be accurately controlled, and the contact of the SAM and the perovskite intermediate interface can be improved. The novel molecular structure helps to promote better energy level matching between the perovskite layer and the valence band, thereby improving the charge extraction efficiency. At the same time, the introduction of the hydrophilic thiophene unit can also effectively inhibit the self-aggregation behavior of the single SAM molecule during the film forming process, and improve the interface wettability.
Owner:SHANGHAI BOGUANG ERA NEW ENERGY TECHNOLOGY CO LTD

Algalnp red light micro-led chip with high al component polarization induced barrier layer and preparation method

PendingCN122294659AInhibit lateral diffusionsuppress overflowValence bandQuantum efficiency
This application discloses an AlGaInP red micro-LED chip with a high Al composition polarization-induced barrier layer and its fabrication method. The core innovation lies in the use of an Al composition in the barrier layer of the quantum well structure. x2 Ga 1‑x2 ) y2 InP gradually changes to Al 0.5 In 0.5 The high Al composition structure of P elevates the valence band level to 250-320 meV, significantly enhancing carrier confinement capability. Simultaneously, the barrier layer employs low-concentration p-type doping, inducing the formation of a three-dimensional hole gas through the polarization effect of the gradual Al composition change, allowing the hole concentration to break through the doping limit and avoiding the luminescence quenching problem caused by high doping. This solves the core problems of insufficient carrier confinement, low hole injection efficiency, and poor high-temperature stability in existing red Micro-LED chips. The device's external quantum efficiency, high-temperature retention rate, and long-term reliability are all significantly improved. The fabrication process is compatible with existing production lines and is applicable to multiple fields.
Owner:WEIJIU (SUZHOU) OPTOELECTRONICS TECHNOLOGY CO LTD

Multi-physical field coupling molecular dynamics simulation method and system for femtosecond laser ablation

This invention provides a multiphysics-coupled molecular dynamics simulation method and system for femtosecond laser ablation, comprising: establishing an atomic model of a wide-bandgap semiconductor material and its corresponding electronic grid; inputting laser parameters and material parameters and initializing field variables; introducing a carrier concentration evolution equation and updating the laser intensity distribution within the material based on the Drude model; considering the bandgap energy consumption term of the valence band electron transition process under femtosecond laser irradiation, improving the laser heat source term in the electronic temperature equation, updating the electronic temperature, and then obtaining the atomic-scale behavioral evolution through energy exchange between the electronic system and the lattice system, and outputting the results. This invention introduces the nonlinear absorption of femtosecond laser ablation of wide-bandgap semiconductor materials into a dual-temperature model-molecular dynamics model coupling framework, realizing a unified coupled simulation of energy deposition, carrier evolution, transient optical response, and material removal behavior of wide-bandgap semiconductor materials under femtosecond laser irradiation.
Owner:SHANGHAI JIAOTONG UNIV

A W 18 O 49 Bi₂MoO₆ heterojunction photothermal catalyst, its preparation method and application

PendingCN122441432AHeterojunctionNanowire
This invention relates to photothermal catalytic materials, specifically disclosing a W 18 O 49 / Bi2MoO6 heterojunction photothermal catalyst, its preparation method and application. First, W is prepared by a solvothermal method. 18 O 49 Powder, and then construct W through a hydrothermal synthesis strategy. 18 O 49 / Bi2MoO6 heterojunction. A composite catalyst with nanowires uniformly grown on a nanosheet structure was obtained. This invention utilizes W 18 O 49 The localized surface plasmon resonance effect and oxygen vacancy characteristics, combined with the unique layered structure and suitable valence band position of Bi₂MoO₆ material, enable the composite of these two materials to construct a matched bandgap interface, effectively broadening the spectral response range and enhancing photothermal synergy. The preparation process of this invention is mild and controllable, using readily available and highly reproducible raw materials, and can efficiently achieve CO₂ reduction, making it suitable for carbon neutralization and CO₂ resource utilization.
Owner:CHONGQING UNIVERSITY OF SCIENCE AND TECHNOLOGY

Semiconductor equipment

PendingJP2026085948ADevice materialSingle crystal
To provide a semiconductor device using diamond semiconductors that is suitable for low-loss, high-current, high-speed, and high-voltage operation, as well as for miniaturization and weight reduction of devices. [Solution] In the semiconductor device 101, a film (HEA film) 13 made of a high electron affinity material is formed in contact with at least a part of the surface of the diamond semiconductor 11. The high electron affinity material is a material in which the lower end of the conduction band at the interface between the diamond semiconductor and the HEA film is energetically lower than the upper end of the valence band of the diamond semiconductor at the interface, and the HEA film has a structure in which it is made of a single crystal or polycrystalline film in at least some locations.
Owner:NAT INST FOR MATERIALS SCI

A compound conductive carbon slurry with tunable energy level, preparation method and application

This invention relates to a tunable composite conductive carbon paste, its preparation method, and its applications, belonging to the technical field of perovskite solar cell materials. By controlling the composition of the conductive carbon paste, this invention improves conductivity while simultaneously increasing the work function of the carbon electrode, optimizing energy level alignment to solve problems such as energy level mismatch at the carbon electrode and perovskite thin film interface, thereby improving the photoelectric conversion efficiency of perovskite solar cells. This invention utilizes scandium trifluoromethanesulfonate Sc(OTf)3 to replace PSS (photosensitive conductive sand). - H + Furthermore, by employing a strong electron-pulling effect (P-type doping), the electron cloud density of the PEDOT chain is rearranged, effectively improving the work function of both the PEDOT:PSS and the final carbon electrode. This energy level modulation enables the carbon electrode to form a good ohmic or quasi-ohmic contact with the top of the perovskite valence band, eliminating the Shockley barrier and significantly reducing energy loss at the interface, thereby increasing the open-circuit voltage of the battery.
Owner:BEIHANG UNIV

Electroluminescent device and method for manufacturing the same, display device

ActiveCN118265334BValence bandConduction band
The application provides an electroluminescent device and a preparation method thereof and a display device, and relates to the technical field of display. The electroluminescent device comprises a first electrode and a second electrode arranged oppositely, at least two light-emitting units arranged in sequence and stacked between the first electrode and the second electrode, and at least one charge generation layer arranged between two adjacent light-emitting units respectively. The material of the charge generation layer comprises a first metal oxide, a second metal oxide and a third metal oxide. The conduction band energy level of the first metal oxide is between the conduction band energy level of the second metal oxide and -4.5 eV, and the valence band energy level of the third metal oxide is between the conduction band energy level of the first metal oxide and -5.5 eV. The electroluminescent device provided by the application has high charge generation efficiency of the charge generation layer and good device performance.
Owner:TCL TECHNOLOGY GROUP CORPORATION

A hole transport material and a preparation method thereof

The application is suitable for the technical field of solar cells, and provides a hole transport material and a preparation method thereof. An epoxy group capable of ring-opening cross-linking is introduced at the end of Spiro-OMeTAD, the epoxy groups at the end of Spiro-OMeTAD are ring-opening cross-linked to form a cross-linked network structure. On the one hand, the cross-linked network structure has the molecular orbital energy level of Spiro-OMeTAD, the highest occupied molecular orbital energy level thereof is aligned with the valence band energy level of a perovskite layer, is conducive to efficient extraction of holes generated by the perovskite layer, and effectively realizes photoelectric conversion. On the other hand, the cross-linked network structure not only blocks water, oxygen and the like from entering the inside of the hole transport layer, but also inhibits volatilization of an introduced ionic dopant, ensures the hole transport efficiency, prevents the transmission of ions in an active layer to the hole transport layer, and inhibits the ion migration of the hole transport layer. The application effectively inhibits ion migration while improving the hole transport efficiency, and improves the long-term stability of a perovskite solar cell.
Owner:ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD

Perovskite solar cell with polyanion buffer layer and preparation method thereof

The application provides a perovskite solar cell containing a polyanion buffer layer and a preparation method thereof. The perovskite solar cell of the application introduces a PSTFSIK buffer layer on a PEDOT hole transport layer, which can form a strong chemical bond with a perovskite layer, enhances the binding force of the hole transport layer and the buried interface of the perovskite, and the strong interaction helps to stabilize the interface and inhibit the degradation of the interface; the introduction of the PSTFSIK buffer layer effectively inhibits the process of Sn 2+ oxidation to Sn 4+ in a tin-lead perovskite, reduces the defect state density; the PSTFSIK layer can regulate the crystallization process of the tin-lead perovskite, and obtain a more flat and high-quality perovskite film. The PSTFSIK layer can adjust the surface work function and energy level of PEDOT, so that the HOMO energy level of PEDOT is more matched with the valence band of the perovskite, the energy barrier of hole transport is reduced, the extraction of interface holes is promoted, and the non-radiative recombination loss of the interface is reduced.
Owner:HUAZHONG UNIV OF SCI & TECH

A thin film, an optoelectronic device, and a display device

PendingCN122318500AValence bandSemiconductor materials
This application belongs to the field of displays and relates to a thin film, an optoelectronic device, and a display apparatus. The thin film includes a first sublayer, a second sublayer, and a third sublayer stacked together. The first sublayer is made of a metal oxide material, and the third sublayer is made of a semiconductor material. The valence band energy level of the first sublayer is lower than that of the third sublayer, and the conduction band energy level of the first sublayer is lower than that of the third sublayer. The Fermi level of the second sublayer is located between the Fermi levels of the first and third sublayers. The thin film provided by this application can achieve carrier transport functionality and reduce leakage current.
Owner:GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD

Reducing band-to-band tunneling in semiconductor devices

ActiveUS12652829B2Valence bandSemiconductor materials
Integrated circuit transistor structures are disclosed that reduce band-to-band tunneling between the channel region and the source / drain region of the transistor, without adversely increasing the extrinsic resistance of the device. In an example embodiment, the structure includes one or more spacer configured to separate the source and / or drain from the channel region. The spacer(s) regions comprise a semiconductor material that provides a relatively high conduction band offset (CBO) and a relatively low valence band offset (VBO) for PMOS devices, and a relatively high VBO and a relatively low CBO for NMOS devices. In some cases, the spacer includes silicon, germanium, and carbon (e.g., for devices having germanium channel). The proportions may be at least 10% silicon by atomic percentage, at least 85% germanium by atomic percentage, and at least 1% carbon by atomic percentage. Other embodiments are implemented with III-V materials.
Owner:SK HYNIX NAND PRODUCT SOLUTIONS CORP

Infrared detector and method of manufacturing the same

ActiveCN116387381BFinal product manufactureValence bandMaterial growth
The application discloses an infrared detector. The absorption layer of the infrared detector is a superlattice structure in which N-type InAs layers and N-type InAsSb layers are alternately stacked, or a superlattice structure in which N-type InGaAs layers and N-type InAsSb layers are alternately stacked, and the potential barrier layer of the infrared detector is a superlattice structure in which N-type InAsP layers and N-type InGaSb layers are alternately stacked. The valence band of the InAsP / InGaSb superlattice potential barrier layer is flush with the valence band of the In(Ga)As / InAsSb superlattice absorption region, forms an electron potential barrier, helps to reduce the dark current of the device, and meanwhile, the barrier layer does not contain Al, avoids the oxidation of the Al-containing material, and reduces the difficulty of material growth and processing.
Owner:SUZHOU JINGGE SEMICON CO LTD

Semiconductor epitaxial structure, preparation method therefor and use thereof

ActiveCN121463605BValence bandAcceptor impurity
The application provides a semiconductor epitaxial structure, a preparation method and application thereof. The p-type semiconductor layer of the semiconductor epitaxial structure comprises a p-type barrier layer, the p-type barrier layer comprises at least one p-type structure, the p-type structure comprises a barrier front sublayer, a p-type nitride microstructure and a barrier rear sublayer arranged in sequence, the p-type nitride microstructure comprises a plurality of nano protrusions distributed on the surface of the barrier front sublayer away from the active layer, the barrier rear sublayer covers the plurality of nano protrusions and the surface of the barrier front sublayer not covered by the nano protrusions; the material of the barrier front sublayer is a first nitride doped with an acceptor impurity, the material of the nano protrusions is a second nitride, and the valence band of the second nitride is higher than that of the first nitride. The p-type nitride microstructure is arranged in the p-type barrier layer to reduce the activation energy of the acceptor doping, and a stronger polarization effect is formed at the interface, so that the hole concentration is improved.
Owner:JIANGSU INST OF ADVANCED SEMICON CO LTD