183 results about "Valence band" patented technology

Novel NEDMOS and / or LDMOS FET integrated circuit structures that reduce or eliminate the floating body effect by reducing the built-in voltage Vbi of the device. Reduction of Vbi includes adding a source-side structure that includes a “Vbi Reduction Material” (VRM) layer. VRM has a bandgap less than the bandgap of Si and, for an N-type device, a valence band that is higher than the valence band of the body material. The low Vbi of the VRM layer on the source-side of a MOSFET device that would otherwise exhibit a floating body effect allows significantly freer movement of holes from the body of the device towards the source region, thus increasing body hole collection efficiency, and significantly reduces the floating body effect.

The invention discloses a Sb / Mn / Ge co-doped tin telluride-based thermoelectric material and a preparation method and application thereof, the molecular formula of the Sb / Mn / Ge co-doped tin telluride-based thermoelectric material is Sn < 1.01-x-y > Sb < 0.04 > MnxGeyTe, x is more than or equal to 0.04 and less than or equal to 0.08, and y is more than or equal to 0 and less than or equal to 0.10. The preparation method comprises the following steps: weighing raw materials Sn, Te, Sb, Mn and Ge, grinding, mixing, transferring into a carbon-plated quartz tube, and performing vacuum sealing; carrying out a melting reaction on the carbon-plated quartz tube, and quenching after the reaction is finished to obtain a cast ingot; and grinding into powder, loading into a mold, sintering by discharge plasma, and relieving pressure and cooling. The invention discloses application of the thermoelectric material in a medium-high temperature thermoelectric power generation device for industrial waste heat recovery. The raw materials are non-toxic and environment-friendly, the carrier concentration is reduced through Sn compensation, meanwhile, the energy difference between light and heavy valence bands is reduced through Sb / Mn / Ge co-doping, and the energy band degeneracy and the state density effective quality are improved.

The invention discloses a material classification method and device based on an ultraviolet electron spectrum, a medium and a product, and relates to the technical field of material surface science and data analysis. The method comprises the following steps: acquiring ultraviolet light electron energy spectrum data of a target material to be analyzed, and extracting a first spectrum curve from the energy spectrum data; obtaining a conductor characteristic identification result of the target material according to the first spectrum curve; under the condition of determining that the target material does not have the conductor characteristics based on the conductor characteristic identification result, extracting a second spectrum curve in a preset valence band top energy interval extending towards the negative energy direction by taking the Fermi level as a starting point from the ultraviolet light electron spectrum data, and performing multi-dimensional characteristic fusion on the second spectrum curve, generating a semiconductor characteristic identification result of the target material based on the fusion result; and determining a classification result of the target material according to the semiconductor characteristic identification result. According to the scheme, the conductive attributes of the target material can be quickly and accurately classified.

The invention provides an epitaxial structure of a semiconductor laser and a preparation method thereof. The epitaxial structure comprises a first waveguide layer, a first barrier layer, a first barrier layer, a quantum well layer, a second barrier layer, a second barrier layer and a second waveguide layer which are stacked from bottom to top. By adjusting different contents of an aluminum element and a gallium element in the first waveguide layer, the first barrier layer, the second barrier layer and the second waveguide layer, adjusting different contents of a gallium element and an indium element in the first barrier layer, and adjusting different contents of an aluminum element, a gallium element and an indium element in the second barrier layer, a first conduction band difference delta Ec11 is greater than 70meV, a second valence band difference delta Ev21 is greater than 240meV, and a second valence band difference delta Ev21 is greater than 240meV. The first valence band difference delta Ev11 and the second conduction band difference delta Ec21 are both smaller than or equal to 0 meV. The epitaxial structure can well balance the limiting effect on electrons and holes, so that the limiting capability of the epitaxial structure on current carriers is optimal, and the output efficiency of the device is improved.

The invention belongs to the technical field of SERS (Surface Enhanced Raman Scattering) detection, and relates to a preparation method of an Ag-Fe3O4 composite SERS substrate and application of the Ag-Fe3O4 composite SERS substrate in monitoring trace pollutants in water. Based on a plasma-semiconductor synergistic enhancement mechanism, cubic Fe3O4 nano particles with exposed {100} crystal faces are synthesized through a hydrothermal method, and the cubic Fe3O4 nano particles and Ag nano particles are subjected to ultrasonic-stirring to construct the Schottky heterojunction. The substrate creatively realizes dual-channel enhancement: the local surface plasmon resonance effect of Ag nanoparticles generates electromagnetic enhancement, the narrow band gap of Fe3O4 promotes photo-induced electrons to be transferred to Ag, an interface electric field is formed, and the polarizability of adsorption molecules is remarkably increased. When the probe is applied to detection of trace pollutants in a water body, the probe molecule RB is anchored on the surface of Fe3O4 through carboxyl, and the HOMO energy level of the probe molecule RB and the valence band top of Fe3O4 generate resonance charge transfer, so that the Raman cross section is improved. The detection limit of RB under 0.25 mW laser is increased by several orders of magnitude compared with that of a single Ag substrate.

The invention provides a nitride semiconductor laser. The laser comprises a substrate, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper coating layer which are sequentially arranged from bottom to top. And the lower waveguide layer comprises any one or a combination of more of InGaN, GaN, InN, AlInGaN, an InGaN / GaN superlattice, an InGaN / AlGaN superlattice, an InGaN / AlGaN superlattice, an InGaN / AlInN superlattice and an InGaN / AlInGaN superlattice. The peak rate electric field distribution of the lower waveguide layer has an arc distribution, and the peak rate electric field distribution has a curve distribution of a function y = logax (a > 1). The drift rate distribution of the saturated electrons of the lower waveguide layer has an arc-shaped distribution, and the drift rate distribution of the saturated electrons has a curve distribution of a third quadrant of a function y = x-b (b > 1, b is an odd number). The density distribution of valence band effective states of the lower waveguide layer has a curve distribution of a third quadrant of a function y = (cx + 1) / (cx-1) (c > 1).

Provided is a semiconductor light-emitting element having good light emission characteristics compared to conventional light-emitting elements. The semiconductor light-emitting element includes a light-emitting layer including a laminate in which first and second III-V compound semiconductor layers are stacked repeatedly. Group III element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of Al, Ga, and In. Group V element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of As, Sb, and P. A composition wavelength difference between composition wavelengths of the first and second III-V compound semiconductor layers is 70 nm or more. In a band structure of the laminate, conduction band-side well depth (Dc) is larger than valence band-side well depth (Dv), and Dc / (Dc+Dv) is 65% or more.

The invention belongs to the technical field of corrosion inhibition of ocean engineering structure metal materials, and particularly relates to an anti-corrosion, anti-fouling and antibacterial multifunctional Z-type heterojunction photo-anode and a preparation method thereof. The photoanode is of a Z-type heterojunction structure, and selective recombination of electron-hole pairs can be achieved, so that electrons with higher reducing capacity are reserved on a conduction band of one semiconductor, and holes with higher oxidizing capacity are reserved on a valence band of the other semiconductor. Photoelectrons are effectively injected into protected metal to realize photoelectric cathode protection; meanwhile, strong oxidizing holes and generated active oxygen species (such as. OH) can efficiently degrade organic matters and biological membranes, kill bacteria and inhibit algae, and the anti-corrosion, anti-fouling and anti-algae functions are synchronously achieved. The problem that a traditional photo-anode is single in function is solved, and the photo-anode has the advantages of being high in sunlight utilization rate, high in oxidation-reduction capacity, good in stability and the like and can be widely applied to the fields of ocean engineering corrosion prevention, medical instrument surface treatment, water treatment and the like.

Disclosed are a compound, an organic hole transport layer material, and a perovskite solar cell, relating to the technical field of perovskite solar cells. The compound has a structure represented by formula I, uses a carboxyl group, a sulfonic acid group, and a phosphoric acid group as anchor groups, and is connected to a carbon position at an active reaction site in an N-containing fused ring (the number of rings is greater than or equal to 3) by means of a double bond, thereby maintaining the long-axis rigidity of a molecule, so that the compound can be more effectively conjugated, and a functional group is introduced on the short axis of the molecule, thereby improving the overall rigidity and functionality of the compound. The use of the compound as an organic hole transport material can improve the extraction and transport of holes. The introduction of the functional group on the short axis of the molecule further improves perovskite thin film crystallization and passivates interface defects. The design of the structure of the compound in the organic hole transport material achieves more excellent HOMO energy level and valence band energy level matching between the organic hole transport material and an active layer material, thereby further improving the device efficiency and stability of perovskite cells.

A fin-based tunneling filed field effect transistor (TFET) includes a control gate structure and an assisting gate structure adjacent to the control gate structure. The assisting gate structure is disposed between the control gate structure and a source / drain region of the fin-based TFET. When a voltage is applied to the assisting gate structure, the assisting gate structure causes the valence band of the fin-based TFET to be raised near the junction between the source / drain region and a channel region in a semiconductor layer under the assisting gate structure. This reduces the tunneling distance between the source / drain region and the channel region, which allows for a lesser threshold voltage to be used for the control gate structure than without the assisting gate structure.

This provides a structure that exhibits a high degree of balance between durability, conductivity, and quantum efficiency. [Solution] A layered structure comprising a substrate and a high-density particle layer on the substrate, wherein the high-density particle layer contains nanoparticles with an inorganic film formed on its surface, the nanoparticles having a particle size of 1 nm to 50 nm, the high-density particle layer having a packing density of nanoparticles per unit volume of 30 vol% to 80 vol%, the inorganic film having a thickness of 0.1 nm to 5 nm, the energy level at the upper end of the valence band of the inorganic film being the same as or lower than the energy level at the upper end of the valence band of the nanoparticles, and the energy level at the lower end of the conduction band of the inorganic film being the same as or higher than the energy level at the lower end of the conduction band of the nanoparticles.

The invention discloses a p-type two-dimensional semiconductor top gate field effect transistor and a preparation method thereof, and the preparation method comprises the steps: preparing a source electrode and a drain electrode on the surface of a two-dimensional semiconductor material, then defining a two-dimensional semiconductor channel region, etching to remove the two-dimensional semiconductor material outside the channel region, and then preparing a p-type seed layer, a gate dielectric layer and a gate electrode, the p-type seed layer covers the substrate, the surface of the two-dimensional semiconductor material, the upper surface of the source electrode, the upper surface of the drain electrode and the side wall exposed in the range of the transistor. According to the preparation method provided by the invention, before the dielectric layer is prepared, the p-type seed layer is prepared firstly, and the Fermi level of the two-dimensional semiconductor material is fixed near a valence band, so that p doping is realized, the process stability is good, and the obtained p-type two-dimensional semiconductor top gate field effect transistor has relatively large on-state current and switch ratio, relatively small source leakage current and hysteresis, and relatively high reliability. The power consumption is reduced, an advanced process is adapted, and the method has a wide application prospect in the manufacturing of a large-scale integrated circuit.

Photocatalytic sterilization technology is a technology that uses active substances generated by specific materials under light conditions to kill bacteria, viruses and other microorganisms. This technology mainly relies on the performance of photocatalytic materials, especially semiconductor materials such as titanium dioxide (TiO2). When the photocatalyst is irradiated by light of a specific wavelength, the electrons in the material transition from the valence band to the conduction band, forming electron-hole pairs. These electrons and holes have high chemical activity and can react with water or oxygen to generate free radicals with strong oxidizing ability, which can destroy the cell wall or cell membrane of microorganisms, causing the leakage of intracellular substances, thereby achieving the effect of sterilization. The present application aims to solve the problems of low light utilization rate and insufficient active sites of TiO2 photocatalytic materials, and proposes a TiO2@Ag / Ti-MOF functional material. The TiO2@Ag / Ti-MOF functional material is based on the Ti-MOF skeleton to construct Ag-MOF, realizing the controlled slow release of Ag ions and having a long-term effective sterilization effect.

This invention provides a GaN-based light-emitting diode epitaxial structure and its fabrication method. By introducing a Zn source as a surface activator throughout the growth process of the P-type AlGaN electron blocking layer, a P-type AlGaN electron blocking layer structure with a gradient distribution of Zn concentration along the direction of the P-type AlGaN electron blocking layer is constructed. Specifically, through the core role of the Zn surface activator and the innovative design of the Zn concentration gradient distribution, a smooth rise in the conduction band Ec and no loss of strong electron blocking capability are achieved, while ensuring that the valence band Ev is smooth and without spikes throughout and that hole injection is unimpeded throughout.

The invention provides a method for measuring the magnetic moment of a transition metal material based on XPS, and the method comprises the steps: selecting a to-be-tested material single crystal, and transferring a single crystal sample into an X-ray photoelectron spectrometer; selecting an X-ray source; setting a test point position, and setting scanning parameters including energy passing, scanning step length, beam spot size and a magnetic lens mode; selecting a peak value of a 2p orbit high-resolution narrow spectrum corresponding to the transition metal contained in the to-be-detected sample as a fixed-height reference signal, and etching the surface of the sample to remove surface pollution; determining the position of a 3s orbit characteristic peak according to a broad spectrum, and collecting a 3s orbit high-resolution narrow spectrum of transition metal contained in the sample; collecting a valence band spectrum or a C1s orbit high-resolution narrow spectrum for correcting a broad spectrum and a 3s orbit high-resolution narrow spectrum; correcting the binding energy by adopting a correction reference, carrying out peak-dividing fitting through XPS peak-dividing fitting software, and extracting characteristic parameters of a 3s orbit spin exchange split peak; and calculating to obtain the magnetic moment of the transition metal material.

A semiconductor device includes a substrate, a gate stack structure, and a channel structure. The gate stack structure includes a plurality of interlayer insulating layers and a plurality of gate electrodes alternately stacked on the substrate. The channel structure at least partially penetrates the gate stack structure and extends in one direction. The channel structure includes: a channel layer coupled to the substrate; a ferroelectric layer at least partially surrounding the channel layer and including a ferroelectric material; and a charge-bound layer at least partially surrounding the ferroelectric material and including an insulating material. At least one of a conduction band level or a valence band level of the insulating material is disposed between a conduction band level and a valence band level of the ferroelectric material.

A method for adjusting the wide spectrum detection of transition metal chalcogenides by using vacancy defects belongs to the field of two-dimensional materials. In the method, transition metal oxides are used as metal sources, two different chalcogen elements are used as sulfur sources, and a single-layer ternary transition metal chalcogen compound with uniform element distribution is grown by using a chemical vapor deposition method. By using the difference in the stability of the chemical bonds between alloy elements, the unstable chemical bonds are broken by hydrogen-assisted annealing, and the generated chalcogen element vacancy defects are uniformly distributed in the ternary transition metal chalcogen compound. The chalcogen element vacancy defects introduce defect energy levels between the conduction band and the valence band of the transition metal chalcogen compound, generate new photoluminescence peaks, and widen the spectrum detection range. The experimental method is simple in process, good in repeatability, can accurately control the type, distribution and number of defects, and is suitable for large-scale production.

A disclosed electron source includes: (A) a graphene layer having an electron emission area on a surface of the graphene layer; and (B) a p-type semiconductor layer that is in direct contact with the graphene layer and forms a Schottky junction with the graphene layer. In this way, the electrons are accelerated in the depletion layer in the p-type semiconductor layer. Moreover, unlike the MIS type electron source, since the electrons are not accelerated in the insulator layer, the dielectric breakdown caused by a large number of electrons travelling in the valence band of the insulator does not occur, and a long lifespan electron source can be realized. Note that the aforementioned p-type semiconductor layer preferably has a depletion layer having a width of 2.91 nm or more and 30 nm or less.

A semiconductor device with dual side source / drain (S / D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S / D regions within the superlattice structure, forming a gate structure between the first and second S / D regions, forming first and second contact structures on first surfaces of the first and second S / D regions, and forming a third contact structure, on a second surface of the first S / D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S / D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S / D region.

The invention provides a semiconductor epitaxial structure and a preparation method and application thereof. A p-type semiconductor layer in the semiconductor epitaxial structure comprises a p-type barrier layer, the p-type barrier layer comprises at least one p-type structure, the p-type structure comprises a barrier front sub-layer, a p-type nitride microstructure and a barrier rear sub-layer which are arranged in sequence, and the p-type nitride microstructure comprises a plurality of nanometer protruding parts which are distributed on the surface, away from an active layer, of the barrier front sub-layer. The rear barrier sub-layer covers the plurality of nano convex parts and the surface, which is not covered by the nano convex parts, of the front barrier sub-layer; the material of the barrier front sub-layer is a first nitride doped with acceptor impurities, the material of the nanometer protruding part is a second nitride, and the valence band of the second nitride is higher than that of the first nitride. According to the invention, the p-type nitride microstructure is arranged in the p-type barrier layer so as to reduce the activation energy of acceptor doping, and a relatively strong polarization effect is formed at an interface, thereby cooperatively improving the hole concentration.

The invention relates to a metal organic framework for improving charge separation efficiency based on a conjugated benzene ring, a preparation method thereof and application of the metal organic framework in degradation of methyl orange. The invention relates to a complex of MOF-2 [Zn8 (NDC) 8 (TRZ) 8] n, in which NDC is 2, 6-naphthalenedicarboxylic acid, and TRZ is 1, 2, 4-triazole, and a preparation method of the complex of MOF-2 [Zn8 (NDC) 8 (TRZ) 8] n. The extended pi conjugation in MOF-2 results in significant improvements, including reduced band gap, enhanced visible light absorption, and more excellent charge separation efficiency, as proved by comprehensive ultraviolet-visible spectroscopic analysis, electrochemical analysis, and valence band-XPS measurements. 83.8% of methyl orange degradation is realized by the MOF-2 under the irradiation of visible light within 30 minutes. According to mechanism research performed by using a free radical capture technology and electron spin resonance (ESR) spectroscopy, superoxide free radicals (. O2 <->), singlet oxygen (1O2) and hydroxyl free radicals (. OH) are determined as main active species.

The application relates to application of Bi2O2Se in a photocatalytic nitrogen fixation reaction and belongs to the technical field of photocatalytic nitrogen reduction. The BOS catalyst with intrinsic weak hole oxidation capacity realizes efficient and stable photocatalytic ammonia synthesis without a sacrificial agent. The BOS has an optimized narrow band gap structure and a unique straddling energy band arrangement, the valence band position is shallow, the hole oxidation capacity is weak, the oxidation degradation of NH4 + Can be effectively inhibited, and the conduction band position is suitable, so that the thermodynamic driving force of nitrogen reduction is ensured. The catalyst has excellent light absorption capacity in a wide spectral range (extending to the near-infrared region), and the apparent quantum efficiency reaches 0.12% at a wavelength of 700 nm. The ammonia synthesis rate of the BOS without a sacrificial agent reaches 61 muM.h ‑1 -1, which is 8.3 times and 2.8 times that of carbon nitride and cadmium sulfide, and the catalyst maintains high activity in an air atmosphere, has excellent oxygen compatibility and cycle stability.

This application discloses a semiconductor defect detection device and method, relating to the field of semiconductor defect detection technology. When detecting defects in a semiconductor sample, a first light source component emits a pulsed laser with photon energy greater than the bandgap of the semiconductor sample, exciting a first photoluminescence signal. Then, while maintaining the first light source component's pulsed laser emission, a second light source component emits a continuous laser with photon energy equal to the energy interval between the energy level and valence band of the target deep-level defect within the semiconductor sample, exciting a second photoluminescence signal. Based on these two photoluminescence signals, defect information of the semiconductor sample can be obtained. A synchronous optical path calibration module is used to detect the focused spot positions of the pulsed laser and the continuous laser on the surface of the semiconductor sample in real time, ensuring that the offset between the two focused spots is less than a preset threshold. This effectively reduces detection errors caused by spot offset and improves detection accuracy.

The present disclosure provides a semiconductor device including a semiconductor structure, a first metal element-containing structure, and a layer. The semiconductor structure includes a first semiconductor layer having a first material, a second semiconductor layer, an active region between the first semiconductor layer and the second semiconductor layer. The first metal element-containing structure is located on the semiconductor structure and includes a first metal element. The layer has a second material and a second metal element and is located between the first semiconductor layer and the first metal element-containing structure. The first material has a conduction band edge Ec and a valence band edge Ev, and the second material has a work function WF1, when the first semiconductor layer is of an n-type conductivity, the work function WF1 fulfills WF1<(Ec+Ev) / 2, and when the first semiconductor layer is of a p-type conductivity, the work function WF1 fulfills WF1>(Ec+Ev) / 2.

The invention belongs to the technical field of laser, and particularly discloses a high-efficiency laser chip of a direct pumping light-emitting layer and a laser, and the laser chip comprises a substrate layer, an integrated broadband reflector, an integrated active region, a window layer and a protection layer which are sequentially arranged. The integrated broadband integrated active area comprises a plurality of active groups, each active group comprises spacing layers and light-emitting layers, and the spacing layers and the light-emitting layers are alternately arranged; after the light-emitting layer absorbs photon energy of pump light, a carrier at the top of a material valence band of the light-emitting layer is excited to a material sub-energy level of the light-emitting layer and then relaxed to the bottom of a material conduction band of the light-emitting layer, and stimulated radiative transition is generated in the light-emitting layer. According to the invention, the light-emitting layer of the active area can be directly pumped, so that the wavelength of the pumping light source required by the laser chip is close to the laser wavelength, thereby greatly improving the light-light conversion efficiency of the chip, reducing the quantum loss in the laser generation process, reducing the waste heat in the laser chip, relieving the heat effect of the laser, and improving the production efficiency of the laser chip. The output power of the laser is improved.

This invention discloses a photocatalyst with a dual heterojunction structure, its preparation method, and its application. First, a solution containing iodide and a solution containing bismuth salt are mixed and the pH is adjusted to alkaline. A hydrothermal reaction is then carried out at 150–200°C. The resulting product is washed and dried to obtain product BiOI. Next, the prepared BiOI is calcined at 350–420°C to obtain product BiOI / Bi5O7I. Then, BiOI / Bi5O7I and Mn3O4 are dissolved in a first organic solvent, followed by a hydrothermal reaction at 150–200°C. The resulting product is washed and dried to obtain product Mn3O4 / BiOI / Bi5O7I. This invention introduces a Mn3O4 / BiOI / Bi5O7I dual heterojunction constructed using Mn3O4 as a redox electron mediator, ensuring that the photocatalyst maintains a suitable valence band position, thereby maintaining a strong redox reaction capability. Therefore, it can effectively remove NO and inhibit the formation of NO2 toxic byproducts.

The application provides a gallium nitride-based semiconductor blue laser, which comprises, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer, wherein a topological interface state layer is arranged between the upper waveguide layer and the upper limiting layer, and the topological interface state layer has breakdown field strength distribution characteristics and electron affinity energy distribution characteristics. Through the specific breakdown field strength distribution and electron affinity energy distribution of the topological interface state layer, a new body boundary energy band is formed, a strong spin center is formed at the interface, the coupling between adjacent interface states and the spin-splitting asymmetry of the electron band structure are enhanced, the spin-orbit torque effect is enhanced, the piezoelectric polarization and the thermal stress mismatch of the laser element are relieved, the valence band step is reduced, the uniformity of the valence band step is improved, the uniformity of the carrier injection into the active layer is improved, and the gain uniformity is improved.

An electron source according to the present invention comprises: (A) a graphene layer having an electron emission region on the surface thereof; and (B) a p-type semiconductor layer in direct contact with the graphene layer and forming a Schottky junction with the graphene layer. As a result, electrons are accelerated in a depletion layer in the p-type semiconductor layer. In addition, since the electrons are not accelerated in the insulating layer, unlike an MIS-type electron source, insulation breakdown caused by migration of a plurality of electrons in a valence band of an insulator does not occur, and a long-life electron source can be achieved. In addition, the p-type semiconductor layer preferably includes a depletion layer having a width of 2.91 nm or more and 30 nm or less.

The application aims at improving the energy conversion efficiency and stability of organic-inorganic hybrid perovskite solar cells, and particularly relates to a method for reducing the defect state density of an organic-inorganic hybrid perovskite thin film and reducing the maximum value of a valence band (VBM) of a perovskite material to reduce voltage loss and improve the energy conversion efficiency by using a triose small molecule (1,3-dihydroxyacetone, DHA) as a surface passivation agent and through the interaction between DHA and perovskite components. In the process of preparing the perovskite solar cell, a layer of DHA is uniformly deposited on the surface of the perovskite thin film by using a spin coating technique, and is attached to the surface of the perovskite thin film through hydrogen bonding and coordination bonding, thereby playing a role of a protective layer. The application reduces the defects of the perovskite thin film and improves the stability of the thin film and the corresponding device by introducing the DHA passivation layer into the perovskite solar cell; and the material used has low cost and simple processing technology.

The present invention discloses a semiconductor light-emitting element with a strain-modulated quantum well. The element comprises, from bottom to top, a substrate, an n-type semiconductor, an active layer, and a p-type semiconductor. The active layer is a strain-modulated quantum well. The strain-modulated quantum well is a periodic structure composed of well layers and barrier layers, including a first strain-modulated quantum well, a second strain-modulated quantum well, and a third strain-modulated quantum well. The valley position of the bulk modulus of the first strain-modulated quantum well has an upward angle β toward the p-type semiconductor, while the valley position of the bulk modulus of the second strain-modulated quantum well has an upward angle γ toward the p-type semiconductor. The present invention suppresses crystal field band splitting, enhances the ratio of the heavy hole band to the light hole band at the top of the valence band, increases the TE mode ratio of quantum well luminescence, suppresses the TM mode ratio, improves the light extraction efficiency of the light-emitting element, and improves the light decay problem under thermal conditions.