322 results about "Valence band" patented technology

The invention provides a quantum anomalous Hall insulator aging number determination method and system based on topological defects, computer equipment, a storage medium and a program product. The method comprises the steps that the topological charge of each topological defect of two belt models is determined; determining the contribution of the corresponding topological charge to the aging number so as to determine the aging number of the valence band or the conduction band; fourier transform is carried out on the Hamiltonian to obtain a tight constraint Hamiltonian in a real space; performing one-dimensional Fourier transform on the tightly bound Hamiltonian in the real space to obtain a one-dimensional effective Hamiltonian; judging whether the number of the energy-gap-free edge states is equal to the absolute value of the conduction band aging number or not; if so, taking the number of the edge states without the energy gap as the aging number of the quantum abnormal Hall insulator; and if not, reconstructing the Hamiltonian of the two-band model and the expression of the component x and the component y of the Hamiltonian with respect to the two-dimensional momentum, and calculating the momentum again. According to the method, a large number of high aging models can be constructed, and the research efficiency is improved.

The invention provides a gallium-free antimonide semiconductor infrared laser, and belongs to the technical field of semiconductor lasers. A classical InGa (As) Sb-AlGaAsSb I type strained quantum well comprises three III group elements of In, Ga and Al and two V group elements of As and Sb. The valence band order of the structure is small, and the binding capacity to a hole is not high, so that the gain of the laser and the capacity of expanding to long wavelength are limited; comprising a GaSb substrate, and a lower cladding layer, a lower waveguide layer, an active region, an upper waveguide layer, an upper cladding layer and a protective layer which are sequentially epitaxially grown on the GaSb substrate, the lower cladding layer and the upper cladding layer are made of an AlAsy3Sb1-y3 material, y3 is greater than or equal to 0.02 and less than or equal to 0.22, quantum barriers of the lower waveguide layer, the upper waveguide layer and the active region are made of an Inx2Al1-x2Asy2Sb1-y2 material matched with the GaSb substrate, x2 is greater than or equal to 0.4 and less than or equal to 0.6, and y3 is greater than or equal to 0.02 and less than or equal to 0.22. A quantum well of the active region is made of an InAsy1Sb1-y1 material, wherein y1 is more than or equal to 0.50 and less than or equal to 0.85; the invention is applied to the antimonide semiconductor infrared laser.

The invention relates to (i) a photovoltaic cell, comprising: an absorber layer comprising a perovskite material; and an ultrathin hole-transport layer; (ii) a photovoltaic cell comprising an absorber layer comprising perovskite material, a 5 hole transport layer and a protective layer located between the absorber layer and the hole transport layer, the protective layer having a valence band with an energy level that is between the energy levels of the valence bands of the absorber layer and the hole transport layer; and (iii) a photovoltaic cell comprising a barrier layer located between inner cell layers and an electrode and configured to suppress 0 diffusion of metal from the electrode into the inner layers. Also disclosed are methods of fabricating said photovoltaic cells and methods of fabricating a doped precursor for use in fabricating a photovoltaic cell.

The invention relates to P-type gallium oxide and a preparation method of the P-type gallium oxide. The preparation method of the P-type gallium oxide comprises the steps that a substrate is provided, the substrate is made of beta-gallium oxide, and co-doping of shallow-energy-level acceptor impurities and deep-energy-level acceptor impurities is formed on the substrate. Wherein the shallow-energy-level acceptor impurity and oxygen are elements of the same family. When the deep-energy-level acceptor impurity and the shallow-energy-level acceptor impurity are doped together, the deep-energy-level acceptor of the deep-energy-level acceptor impurity can be combined with the acceptor energy level of the shallow-energy-level acceptor impurity, the Fermi level is further pushed to the valence band top, and the combination effect remarkably improves the P-type conductive stability of the beta-gallium oxide.

The invention belongs to the technical field of optical communication, and relates to a flexible silicon-based photoelectric device, a receiving end and a visible light communication system. The flexible silicon-based photoelectric device comprises a back electrode layer, a hole transport layer, a P-type silicon light absorption layer, an electron transport layer and a front electrode layer. The valence band side energy difference between the electron transport layer and the P-type silicon light absorption layer is greater than the conduction band side energy difference; the conduction band side energy difference between the P-type silicon light absorption layer and the hole transport layer is greater than the valence band side energy difference; the forbidden bandwidth of the electron transport layer is greater than 3.0 eV. The front electrode layer comprises a plurality of grid electrodes which are separately arranged on the surface of the electron transport layer. According to the scheme provided by the invention, the heterojunction is formed on the surfaces of the two sides of the P-type silicon light absorption layer, so that the intensity of a built-in electric field is effectively enhanced, and the flowing speed of photo-generated electrons and photo-generated holes in the device is accelerated, thereby improving the response speed of the device; and meanwhile, the collection efficiency of electrons and holes is improved, so that the photoelectric conversion efficiency of a photoelectric device is improved.

Novel NEDMOS and / or LDMOS FET integrated circuit structures that reduce or eliminate the floating body effect by reducing the built-in voltage Vbi of the device. Reduction of Vbi includes adding a source-side structure that includes a “Vbi Reduction Material” (VRM) layer. VRM has a bandgap less than the bandgap of Si and, for an N-type device, a valence band that is higher than the valence band of the body material. The low Vbi of the VRM layer on the source-side of a MOSFET device that would otherwise exhibit a floating body effect allows significantly freer movement of holes from the body of the device towards the source region, thus increasing body hole collection efficiency, and significantly reduces the floating body effect.

The invention discloses a power semiconductor chip with a deep-energy-level acceptor impurity p base region and a manufacturing method, and belongs to the field of power semiconductor preparation. According to the power semiconductor device chip, deep energy level acceptor impurities are adopted in a p base region to form a p + base region covered by a whole cell, or additional deep energy level acceptor impurities are added on the basis of traditional p + base region doping to form the p + + base region covered by the whole cell; wherein the distance between the energy level position of the deep-energy-level acceptor impurity in silicon and the valence band top EV is more than 0.1 eV. Compared with a traditional power semiconductor device structure, the current turn-off capability of the IGCT device can be effectively improved, and the conduction voltage drop is obviously reduced compared with a traditional structure; the contradiction between the p + base region doping concentration of the IGCT and the current turn-off capability and the conduction voltage drop of the device can be improved.

The present disclosure provides an ultrathin silicon oxynitride interface material, a tunnel oxide passivated structure and preparation methods and applications thereof. The ultrathin silicon oxynitride interface material is an SiON film with a thickness of 1nm to 4nm, and the percentage content of N atoms in the SiON film is 1% to 40%. The ultrathin silicon oxynitride interface material of the present disclosure has the characteristics of high nitrogen content. Compared with silicon oxide, the diffusion rate of boron in the SiON film is low, which effectively reduces the damaging effect of boron on the SiON film, improves the integrity of the SiON film and maintains the chemical passivation effect. The SiON film with high nitrogen concentration can noticeably lower the concentration of boron on the silicon surface so as to lessen the boron-induced defects. Furthermore, the SiON film has an energy band structure approximate to silicon nitride and has a small valence band offset, which helps hole transport, increases the hole transport efficiency and hole selectivity, and further improves the passivation quality and reduces the contact resistivity.

The invention discloses a Sb / Mn / Ge co-doped tin telluride-based thermoelectric material and a preparation method and application thereof, the molecular formula of the Sb / Mn / Ge co-doped tin telluride-based thermoelectric material is Sn < 1.01-x-y > Sb < 0.04 > MnxGeyTe, x is more than or equal to 0.04 and less than or equal to 0.08, and y is more than or equal to 0 and less than or equal to 0.10. The preparation method comprises the following steps: weighing raw materials Sn, Te, Sb, Mn and Ge, grinding, mixing, transferring into a carbon-plated quartz tube, and performing vacuum sealing; carrying out a melting reaction on the carbon-plated quartz tube, and quenching after the reaction is finished to obtain a cast ingot; and grinding into powder, loading into a mold, sintering by discharge plasma, and relieving pressure and cooling. The invention discloses application of the thermoelectric material in a medium-high temperature thermoelectric power generation device for industrial waste heat recovery. The raw materials are non-toxic and environment-friendly, the carrier concentration is reduced through Sn compensation, meanwhile, the energy difference between light and heavy valence bands is reduced through Sb / Mn / Ge co-doping, and the energy band degeneracy and the state density effective quality are improved.

The invention discloses a high-stability GaN bidirectional device which comprises a substrate and a transition layer, a buffer layer, a back barrier layer, a channel layer and a barrier layer which are sequentially stacked on the substrate, a first grid electrode and a second grid electrode are prepared on a first hole injection layer and a second hole injection layer respectively, and the first hole injection layer and the second hole injection layer are located on the barrier layer; the first source electrode and the second source electrode are prepared on the barrier layer in an ohmic contact mode and located on the two sides of the first hole injection layer and the second hole injection layer; the first source electrode, the first hole injection layer, the second hole injection layer and the second source electrode are isolated from one another through passivation layers; from the angle of energy band, the valence band top of the back barrier layer is lower than the valence band top of the channel layer, so that the hole is prevented from being injected into the substrate. The device has the functions of bidirectional conduction and bidirectional voltage resistance, can effectively inhibit a current collapse effect caused by a surface trap and a substrate effect, and has high dynamic stability and low dynamic conduction resistance; the substrate can be connected with any source electrode and can also be electrically suspended so as to improve the breakdown voltage of the device.

The invention discloses a material classification method and device based on an ultraviolet electron spectrum, a medium and a product, and relates to the technical field of material surface science and data analysis. The method comprises the following steps: acquiring ultraviolet light electron energy spectrum data of a target material to be analyzed, and extracting a first spectrum curve from the energy spectrum data; obtaining a conductor characteristic identification result of the target material according to the first spectrum curve; under the condition of determining that the target material does not have the conductor characteristics based on the conductor characteristic identification result, extracting a second spectrum curve in a preset valence band top energy interval extending towards the negative energy direction by taking the Fermi level as a starting point from the ultraviolet light electron spectrum data, and performing multi-dimensional characteristic fusion on the second spectrum curve, generating a semiconductor characteristic identification result of the target material based on the fusion result; and determining a classification result of the target material according to the semiconductor characteristic identification result. According to the scheme, the conductive attributes of the target material can be quickly and accurately classified.

The invention provides an epitaxial structure of a semiconductor laser and a preparation method thereof. The epitaxial structure comprises a first waveguide layer, a first barrier layer, a first barrier layer, a quantum well layer, a second barrier layer, a second barrier layer and a second waveguide layer which are stacked from bottom to top. By adjusting different contents of an aluminum element and a gallium element in the first waveguide layer, the first barrier layer, the second barrier layer and the second waveguide layer, adjusting different contents of a gallium element and an indium element in the first barrier layer, and adjusting different contents of an aluminum element, a gallium element and an indium element in the second barrier layer, a first conduction band difference delta Ec11 is greater than 70meV, a second valence band difference delta Ev21 is greater than 240meV, and a second valence band difference delta Ev21 is greater than 240meV. The first valence band difference delta Ev11 and the second conduction band difference delta Ec21 are both smaller than or equal to 0 meV. The epitaxial structure can well balance the limiting effect on electrons and holes, so that the limiting capability of the epitaxial structure on current carriers is optimal, and the output efficiency of the device is improved.

An example Geiger mode avalanche photodiode includes a first semiconductor alloy forming a compositionally graded gain region configured to form a conduction band having free electrons, a valence band having free holes, and a bandgap between the valence band and the conduction band that varies in size across the graded gain region; a second semiconductor alloy forming an absorber region; and a semiconductor substrate.

A photocatalytic sterilization technology is a technology for killing microorganisms such as bacteria, viruses and the like by utilizing active substances generated by a specific material under an illumination condition. The technology mainly depends on the performance of photocatalytic materials, especially semiconductor materials such as titanium dioxide (TiO2). When the photocatalyst is irradiated by light with a specific wavelength, electrons in the material are transited from a valence band to a conduction band to form electron-hole pairs. The electrons and holes have very high chemical activity, can react with water or oxygen to generate free radicals with strong oxidizing capacity, and can destroy cell walls or cell membranes of microorganisms to cause leakage of substances in cells, so that the sterilization effect is achieved. The invention provides a TiO2 (at) Ag / Ti-MOF functional material aiming at the problems of low light utilization rate and insufficient reaction active sites of a TiO2 photocatalytic material. According to the TiO2 (at) Ag / Ti-MOF functional material, Ag-MOF is constructed on the basis of a Ti-MOF framework, controllable slow release of Ag ions is achieved, and the long-time effective sterilization effect is achieved.

The invention belongs to the technical field of SERS (Surface Enhanced Raman Scattering) detection, and relates to a preparation method of an Ag-Fe3O4 composite SERS substrate and application of the Ag-Fe3O4 composite SERS substrate in monitoring trace pollutants in water. Based on a plasma-semiconductor synergistic enhancement mechanism, cubic Fe3O4 nano particles with exposed {100} crystal faces are synthesized through a hydrothermal method, and the cubic Fe3O4 nano particles and Ag nano particles are subjected to ultrasonic-stirring to construct the Schottky heterojunction. The substrate creatively realizes dual-channel enhancement: the local surface plasmon resonance effect of Ag nanoparticles generates electromagnetic enhancement, the narrow band gap of Fe3O4 promotes photo-induced electrons to be transferred to Ag, an interface electric field is formed, and the polarizability of adsorption molecules is remarkably increased. When the probe is applied to detection of trace pollutants in a water body, the probe molecule RB is anchored on the surface of Fe3O4 through carboxyl, and the HOMO energy level of the probe molecule RB and the valence band top of Fe3O4 generate resonance charge transfer, so that the Raman cross section is improved. The detection limit of RB under 0.25 mW laser is increased by several orders of magnitude compared with that of a single Ag substrate.

The invention discloses a heterojunction bipolar transistor, and belongs to the technical field of semiconductors. The heterojunction bipolar transistor comprises a collector electrode; the base electrode is positioned on one side of the collector electrode; the emitting electrode is positioned on one side, deviating from the collecting electrode, of the base electrode; wherein the base electrode comprises a superlattice structure, the band gap of the base electrode is smaller than the band gap of the emitter electrode, the conduction band offset between the base electrode and the emitter electrode is smaller than the target conduction band offset, and the valence band offset between the base electrode and the emitter electrode is larger than the first target valence band offset. The valence band offset between the base and the collector is greater than a second target valence band offset. The electron injection efficiency of the emitter can be improved, the overall power consumption of the device is reduced, injection of holes from the base to the collector is effectively prevented, and the performance of the device is improved.

Provided is a sensor device having high measurement sensitivity for measuring an external electric field. The sensor device can measure the electric field intensity of the external electric field. The sensor device includes: a first dielectric layer; a channel layer disposed directly on the first dielectric layer, having a channel region, having an atomic layer material film of one or more atomic layers formed of a two-dimensional transition metal disulfide; and a first electrode and a second electrode which are in electrical contact with the channel layer and are disposed so as to face each other with the channel region therebetween, the channel layer having a first surface and a second surface, the first surface being disposed on the first dielectric layer, the second surface being exposed to the outside, or the second dielectric layer being disposed on the second surface. A Fermi level of the channel layer is in a conduction band or valence band of the channel layer and in a trap level band in the first dielectric layer that interfaces with the channel layer.

The invention provides a nitride semiconductor laser. The laser comprises a substrate, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper coating layer which are sequentially arranged from bottom to top. And the lower waveguide layer comprises any one or a combination of more of InGaN, GaN, InN, AlInGaN, an InGaN / GaN superlattice, an InGaN / AlGaN superlattice, an InGaN / AlGaN superlattice, an InGaN / AlInN superlattice and an InGaN / AlInGaN superlattice. The peak rate electric field distribution of the lower waveguide layer has an arc distribution, and the peak rate electric field distribution has a curve distribution of a function y = logax (a > 1). The drift rate distribution of the saturated electrons of the lower waveguide layer has an arc-shaped distribution, and the drift rate distribution of the saturated electrons has a curve distribution of a third quadrant of a function y = x-b (b > 1, b is an odd number). The density distribution of valence band effective states of the lower waveguide layer has a curve distribution of a third quadrant of a function y = (cx + 1) / (cx-1) (c > 1).

The invention relates to the technical field of semiconductor materials and devices, and provides a superlattice infrared detector which comprises a substrate and an epitaxial structure growing on the substrate, the epitaxial structure comprises a superlattice absorption layer, the superlattice absorption layer is provided with multiple stages of A / B superlattice material layers which are sequentially grown in a laminated mode, and the A / B superlattice material layers are arranged on the substrate. Each stage of A / B superlattice material layer is provided with a plurality of layers of A materials and a plurality of layers of B materials which are periodically and alternately grown in a laminated mode, and in the multiple stages of A / B superlattice material layers, the number of atomic layers of the single layer of A material in each stage of A / B superlattice material layer is increased in a stepped mode compared with the number of atomic layers of the single layer of A material in the previous stage of A / B superlattice material layer. The conduction band of each stage of A / B superlattice material layer descends in a stepped manner, and the valence band of each stage of A / B superlattice material layer is kept unchanged. The limitation of short diffusion length can be reduced, the thickness of the absorption region can be effectively increased, the quantum efficiency of the device is improved, and the detection performance of the device is improved.

This application relates to a P-type gallium oxide and a preparation method thereof. The preparation method of the P-type gallium oxide includes providing a substrate, the material of the substrate includes β-gallium oxide, and a co-doping of shallow-level acceptor impurities and deep-level acceptor impurities is formed on the substrate. Among them, the shallow-level acceptor impurities are elements of the same group as oxygen. When the deep-level acceptor impurities and the shallow-level acceptor impurities are co-doped, the deep-level acceptors of the deep-level acceptor impurities can combine with the acceptor levels of the shallow-level acceptor impurities, further pushing the Fermi level towards the valence band top. This combined effect significantly improves the stability of P-type conductivity of β-gallium oxide.

The invention discloses a novel monolithic integrated lead sulfide detector and a preparation method thereof. The novel monolithic integrated lead sulfide detector sequentially comprises a bottom electrode layer, a hole transport layer, a P-type layer, an N-type layer, an electron transport layer and a top electrode layer, the P-type layer is used for absorbing photons, so that electrons in the P-type layer are transited to a conduction band, and holes are reserved in a valence band; the N-type layer is used for transmitting electrons, transmitting the electrons generated by the P-type layer to a conduction band of the N-type layer and enabling holes to stay in the P-type layer, and the electrons and the holes are separated in space; wherein the P-type layer comprises PbS (lead sulfide); and the N type layer comprises CdSe. According to the embodiment of the invention, the N-type layer of cadmium selenide and the P-type layer of PbS are utilized to construct a heterogeneous p-n junction, so that the monolithic integrated lead sulfide detector has a time constant of less than 1 microsecond, high-frame-rate work can be allowed, and rapid change of an object can be tracked.

Provided is a semiconductor light-emitting element having good light emission characteristics compared to conventional light-emitting elements. The semiconductor light-emitting element includes a light-emitting layer including a laminate in which first and second III-V compound semiconductor layers are stacked repeatedly. Group III element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of Al, Ga, and In. Group V element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of As, Sb, and P. A composition wavelength difference between composition wavelengths of the first and second III-V compound semiconductor layers is 70 nm or more. In a band structure of the laminate, conduction band-side well depth (Dc) is larger than valence band-side well depth (Dv), and Dc / (Dc+Dv) is 65% or more.

The invention belongs to the technical field of corrosion inhibition of ocean engineering structure metal materials, and particularly relates to an anti-corrosion, anti-fouling and antibacterial multifunctional Z-type heterojunction photo-anode and a preparation method thereof. The photoanode is of a Z-type heterojunction structure, and selective recombination of electron-hole pairs can be achieved, so that electrons with higher reducing capacity are reserved on a conduction band of one semiconductor, and holes with higher oxidizing capacity are reserved on a valence band of the other semiconductor. Photoelectrons are effectively injected into protected metal to realize photoelectric cathode protection; meanwhile, strong oxidizing holes and generated active oxygen species (such as. OH) can efficiently degrade organic matters and biological membranes, kill bacteria and inhibit algae, and the anti-corrosion, anti-fouling and anti-algae functions are synchronously achieved. The problem that a traditional photo-anode is single in function is solved, and the photo-anode has the advantages of being high in sunlight utilization rate, high in oxidation-reduction capacity, good in stability and the like and can be widely applied to the fields of ocean engineering corrosion prevention, medical instrument surface treatment, water treatment and the like.

Disclosed are a compound, an organic hole transport layer material, and a perovskite solar cell, relating to the technical field of perovskite solar cells. The compound has a structure represented by formula I, uses a carboxyl group, a sulfonic acid group, and a phosphoric acid group as anchor groups, and is connected to a carbon position at an active reaction site in an N-containing fused ring (the number of rings is greater than or equal to 3) by means of a double bond, thereby maintaining the long-axis rigidity of a molecule, so that the compound can be more effectively conjugated, and a functional group is introduced on the short axis of the molecule, thereby improving the overall rigidity and functionality of the compound. The use of the compound as an organic hole transport material can improve the extraction and transport of holes. The introduction of the functional group on the short axis of the molecule further improves perovskite thin film crystallization and passivates interface defects. The design of the structure of the compound in the organic hole transport material achieves more excellent HOMO energy level and valence band energy level matching between the organic hole transport material and an active layer material, thereby further improving the device efficiency and stability of perovskite cells.

The invention relates to the technical field of semiconductor photoelectric devices, and particularly discloses a gallium nitride-based semiconductor laser element with a carrier concentration matching layer. The gallium nitride-based semiconductor laser element with the carrier concentration matching layer sequentially comprises a substrate, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper coating layer from bottom to top, and the carrier concentration matching layer is arranged between the upper waveguide layer and the upper coating layer; according to the gallium nitride-based semiconductor laser element with the carrier concentration matching layer, by regulating and controlling the peak electron drift rate interface steep degree and the transverse sound velocity interface steep degree of the interface between the carrier concentration matching layer and the active layer and the interface between the carrier concentration matching layer and the upper coating layer, the valence band order of the laser is reduced, and the hole injection efficiency and the hole transport efficiency are improved; and the carrier injection uniformity and the laser gain uniformity are improved, so that the slope efficiency, the optical power and the photoelectric conversion efficiency of the laser are improved, the power consumption is reduced, and the service life is prolonged.

A fin-based tunneling filed field effect transistor (TFET) includes a control gate structure and an assisting gate structure adjacent to the control gate structure. The assisting gate structure is disposed between the control gate structure and a source / drain region of the fin-based TFET. When a voltage is applied to the assisting gate structure, the assisting gate structure causes the valence band of the fin-based TFET to be raised near the junction between the source / drain region and a channel region in a semiconductor layer under the assisting gate structure. This reduces the tunneling distance between the source / drain region and the channel region, which allows for a lesser threshold voltage to be used for the control gate structure than without the assisting gate structure.

This provides a structure that exhibits a high degree of balance between durability, conductivity, and quantum efficiency. [Solution] A layered structure comprising a substrate and a high-density particle layer on the substrate, wherein the high-density particle layer contains nanoparticles with an inorganic film formed on its surface, the nanoparticles having a particle size of 1 nm to 50 nm, the high-density particle layer having a packing density of nanoparticles per unit volume of 30 vol% to 80 vol%, the inorganic film having a thickness of 0.1 nm to 5 nm, the energy level at the upper end of the valence band of the inorganic film being the same as or lower than the energy level at the upper end of the valence band of the nanoparticles, and the energy level at the lower end of the conduction band of the inorganic film being the same as or higher than the energy level at the lower end of the conduction band of the nanoparticles.

The invention discloses a p-type two-dimensional semiconductor top gate field effect transistor and a preparation method thereof, and the preparation method comprises the steps: preparing a source electrode and a drain electrode on the surface of a two-dimensional semiconductor material, then defining a two-dimensional semiconductor channel region, etching to remove the two-dimensional semiconductor material outside the channel region, and then preparing a p-type seed layer, a gate dielectric layer and a gate electrode, the p-type seed layer covers the substrate, the surface of the two-dimensional semiconductor material, the upper surface of the source electrode, the upper surface of the drain electrode and the side wall exposed in the range of the transistor. According to the preparation method provided by the invention, before the dielectric layer is prepared, the p-type seed layer is prepared firstly, and the Fermi level of the two-dimensional semiconductor material is fixed near a valence band, so that p doping is realized, the process stability is good, and the obtained p-type two-dimensional semiconductor top gate field effect transistor has relatively large on-state current and switch ratio, relatively small source leakage current and hysteresis, and relatively high reliability. The power consumption is reduced, an advanced process is adapted, and the method has a wide application prospect in the manufacturing of a large-scale integrated circuit.

Photocatalytic sterilization technology is a technology that uses active substances generated by specific materials under light conditions to kill bacteria, viruses and other microorganisms. This technology mainly relies on the performance of photocatalytic materials, especially semiconductor materials such as titanium dioxide (TiO2). When the photocatalyst is irradiated by light of a specific wavelength, the electrons in the material transition from the valence band to the conduction band, forming electron-hole pairs. These electrons and holes have high chemical activity and can react with water or oxygen to generate free radicals with strong oxidizing ability, which can destroy the cell wall or cell membrane of microorganisms, causing the leakage of intracellular substances, thereby achieving the effect of sterilization. The present application aims to solve the problems of low light utilization rate and insufficient active sites of TiO2 photocatalytic materials, and proposes a TiO2@Ag / Ti-MOF functional material. The TiO2@Ag / Ti-MOF functional material is based on the Ti-MOF skeleton to construct Ag-MOF, realizing the controlled slow release of Ag ions and having a long-term effective sterilization effect.

This invention provides a GaN-based light-emitting diode epitaxial structure and its fabrication method. By introducing a Zn source as a surface activator throughout the growth process of the P-type AlGaN electron blocking layer, a P-type AlGaN electron blocking layer structure with a gradient distribution of Zn concentration along the direction of the P-type AlGaN electron blocking layer is constructed. Specifically, through the core role of the Zn surface activator and the innovative design of the Zn concentration gradient distribution, a smooth rise in the conduction band Ec and no loss of strong electron blocking capability are achieved, while ensuring that the valence band Ev is smooth and without spikes throughout and that hole injection is unimpeded throughout.