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709 results about "Valence band" patented technology

In solids, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature. The valence electrons are bound to individual atoms, as opposed to conduction electrons, which can move freely within the atomic lattice of the material. On a graph of the electronic band structure of a material, the valence band is located below the conduction band, separated from it in insulators and semiconductors by a band gap. In metals, the conduction band has no energy gap separating it from the valence band.F To understand the concept of a valence band, it is important to consider the atomic structure of a metal first. For example lithium atoms with electronic configuration 1s²2s¹ can form only one covalent bond. However, when forming a bulk metal, Li atoms come to a resonance structure by taking 1 electron from its neighbouring Li atom and the resultant electronic configuration becomes 1s²2s¹2p¹. As a result of this electron sharing, its neighbouring Li atom loses an electron and comes to an electronic configuration of 1s². The Li atoms now gain the capability to form two covalent bonds thus can form a bulk metal.

SiC vertical double diffusion metal oxide semiconductor structure (VDMOS) device with composite gate dielectric structure

The invention discloses a SiC vertical double diffusion metal oxide semiconductor structure (VDMOS) device with a composite gate dielectric structure, and belongs to the technical field of power semiconductor devices. A thought of differentiating modulation of electric fields is adopted according to difference of intensities of electric fields and difference of defect concentrations of gate dielectrics in different areas, namely, high-k gate dielectrics are adopted in channel regions with high-defect concentration and a low electric field, so that a large quantity of trap states caused by using a SiO2 / SiC interface is avoided; the influence on Fowler-Nordheim (FN) tunneling current is obviously reduced; and meanwhile, because the electric field intensity in a channel injection area is small, the reduction on gate dielectric breakdown voltage caused by small offset of conduction band / valence band is weakened; and moreover, a SiO2 gate dielectric (a junction field-effect transistor (JFET) area is formed in a way of extension and is not subjected to ion injection, the surface quality of the JFET area is good, and the SiO2 / SiC interface state is low) is adopted by the JFET area with low defect concentration and a high electric field, and enough high conduction band offset is supplied by the SiO2 dielectric, so that the ahead breakdown of the gate dielectric is avoided.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Semiconductor device and manufacturing method thereof

The invention discloses a semiconductor device, which comprises a substrate, a plurality of gate stacking structures on the substrate, a plurality of gate side wall structures on the two sides of each gate stacking structure, and a plurality of source-drain regions in the substrate on the two sides of each gate side wall structure. The gate stacking structures comprise a plurality of first gate stacking structures and a plurality of second gate stacking structures, wherein each first gate stacking structure comprises a first gate insulating layer, a first work function metal layer, a second work function metal diffusion barrier layer and a gate filling layer, and the work function is close to a valance band (conduction band) side. Each second gate stacking structure comprises a second gate insulating layer, a modified first work function metal layer, a second work function metal layer and a gate filling layer. The semiconductor device is characterized in that the second work function metal layer comprises injected doping ions for adjusting the work function, and part of the first work function layer which is diffused below the second work function mental layer is used for adjusting a threshold to enable the work function of a gate to be close to the conduction band (valence band) side and to correspond to a first work function, so that the work function of the gate is accurately adjusted.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI

Structure design of tunnel junction in Perovskite/silicon heterojunction lamination solar battery

The invention provides a structure design of tunnel junction in Perovskite / silicon heterojunction lamination solar battery, which relates to the field of solar batteries. A tunneling composite layer TRL with narrow band gap and high doping concentration is added at the junction of the top and bottom part of a lamination battery, and the quite small energy level difference between the conduction band and the valence band can effectively strengthen the carrier recombination at the tunneling junction. The gradient band order at the bottom battery p layer and the tunneling junction can effectivelyenhance the cavity draw-off of the bottom battery and the tunneling junction, and thereby a large amount of charge accumulation among the tunneling junction interfaces can be prevented. After the adding of the TRL having high doping concentration, the defect density of states at the tunneling junction is increased. The electronic cavity assists tunneling through defects, and the probability of recombination and tunneling can be increased. With the adoption of the heterojunction, the spectrum response of the bottom battery can be effectively enhanced, and the opening and pressing loss can be reduced. The preparation method is simple and easy to carry out.
Owner:NANKAI UNIV +1
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