23 results about "Carrier type" patented technology

A method and an apparatus for allocating uplink power, a storage medium, and a terminal are provided. In the method, an overlapping set is determined for a first uplink channel; priorities of the uplink channels in the overlapping set are determined at least based on channel types, information carried in uplink signals, carrier types and periods of the uplink channels in a case that a sum of uplink powers of the uplink channels in the overlapping set is greater than a predetermined maximum total transmission power; the uplink powers of the uplink channels in the overlapping set are adjusted based on the priorities until the sum of the uplink powers of the uplink channels in the overlapping set is less than or equal to the predetermined maximum total transmission power; and an uplink power of the first uplink channel is updated based on an adjustment result.

The application discloses a park navigation method and device, electronic equipment and storage medium, belongs to the navigation technical field, and is used for improving the accuracy and navigation efficiency of park navigation. The method comprises the following steps: in response to a navigation request for a target park, determining navigation starting point information and navigation ending point information, and a carrier type of an execution carrier; based on preset space boundary information of each traffic area in the target park, matching a starting traffic area for the navigation starting point information and matching an ending traffic area for the navigation ending point information; based on a traffic cost parameter corresponding to the carrier type, searching for a navigation path from the starting traffic area to the ending traffic area from a pre-constructed floor connection relationship of the target park, and outputting traffic track data matched with the navigation path; wherein the floor connection relationship of the target park is constructed by taking each traffic area in the target park as a regional node and a connection relationship between the regional nodes through entrances and exits as edges.

A method, apparatus, and a computer-readable storage medium are provided for configuring carriers and / or performing reference signal measurements. In one example implementation, the method may include a user equipment (UE) receiving carrier configuration information and carrier type information from a network node, the carrier type information including an indication whether a carrier is an offloading carrier; determining whether one or more offloading conditions to perform offloading measurements are satisfied; and performing the offloading measurements in response to determining that the one or more offloading conditions are satisfied. In an additional example implementation, the method may include a network node transmitting carrier configuration information and carrier type information to a user equipment (UE) and receiving offloading and / or mobility measurements from the user equipment (UE), the off-loading and / or mobility measurements generated at the user equipment (UE) based on the carrier configuration information and carrier type.

The invention provides a communication method and device and a computer readable storage medium. The method comprises the steps of performing first processing on a first sequence based on a reference signal pattern to determine a target sequence; according to a first rule, second processing is carried out on the target sequence in a time domain to determine a reference signal, the reference signal is a signal after time domain mapping, the first rule is related to an orthogonal code corresponding to an antenna port number and / or a reference signal pattern, the antenna port number is an even number, and the antenna port number is an even number. By adopting the method and the device provided by the invention, multi-port transmission can be realized and the utilization rate of time-frequency resources can be improved in a scene that the requirement on a coverage scene is relatively high and the single carrier type is SC-QAM.

The present invention provides a tandem solar cell and a preparation method therefor. The tandem solar cell comprises a plurality of insulating layers arranged in sequence. A first electrode layer, a first light absorption layer, and a first carrier transport layer are sequentially arranged on the right side of each insulating layer from bottom to top. A second electrode layer, a second carrier transport layer, and a second light absorption layer are sequentially arranged on the left side of each insulating layer from bottom to top, the second light absorption layer comprising a plurality of vertical regions and a horizontal region. An upper surface of a third carrier transport layer is in contact with a lower surface of the horizontal region, and a lower surface of the third carrier transport layer is in contact with an upper surface of the first carrier transport layer. The carrier type of the first carrier transport layer is the same as that of the second carrier transport layer, and is opposite to that of the third carrier transport layer. The present invention can improve the device performance and stability of tandem solar cells, such as all-perovskite tandem cells and perovskite / copper indium gallium selenide (CIGS) tandem cells, and has broad application prospects.

This invention provides a lateral double-diffused field-effect transistor (LDFET), its fabrication method, chip, and circuit, relating to the field of semiconductor technology. The transistor includes: a base substrate; a first transistor and a second transistor having opposite carrier types, formed within the base substrate; a second source of the second transistor formed in a region of a second body region away from a second drift region, and a second drain of the second transistor formed in a region of the second drift region away from the second body region; a first gate and a first field plate of the first transistor forming the back side of the base substrate with their faces downwards, and a second gate and a second field plate of the second transistor forming the back side region of the first transistor with their faces upwards, wherein the first body region and the second body region are formed on the same side of the base substrate. This invention can reduce the vertical thickness of the device, simplify the manufacturing process, and increase the total operating current of the lateral double-diffused field-effect transistor.

The present invention comprises: a transmission unit that transmits, to a base station, capability information indicating whether or not to support joint scheduling for a plurality of cells in which a subcarrier spacing and / or a carrier type is different; and a reception unit that receives, from the base station, a single downlink control information (DCI) format. The reception unit receives, from the base station, a physical downlink shared channel (PDSCH) scheduled in the plurality of cells on the basis of the single DCI format.

1. Name of the product in this design: Baby Bottle (Carrier Type). 2. Purpose of this design: For preparing and keeping warm beverages for infants and young children. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: 3D view 1. 5. Other situations requiring explanation: Part A in the figure is made of transparent material.

A semiconductor device includes gate structures having source / drain canyons disposed therebetween and a P-N junction integrated within the source / drain canyons. The P-N junction includes a first epitaxial region of a first carrier type and a second epitaxial region of a second carrier type different from the first carrier type. The second epitaxial region is vertically stacked on and in contact with the first epitaxial region.

This invention discloses a method, system, device, and medium for managing multi-layer carriers in semiconductor back-end processes. The method includes: defining a data model containing a carrier type table and a carrier content mapping table; configuring station type parameters for processing stations based on the semiconductor process flow, including station type identifiers to distinguish between ordinary stations, wafer boat stations, and carrier replacement stations, and carrier replacement flags indicating carrier replacement needs; inputting the real-time carrier nesting relationship into the data model to generate a real-time data storage model; when a carrier arrives at a processing station, if it is determined that a carrier replacement is required, automatically querying the target carrier type for the next station, selecting an idle carrier from the available carrier pool to perform the replacement operation, updating the nesting relationship, and ensuring data consistency through database transactions. This invention solves the problems of low replacement efficiency and data consistency caused by insufficient nesting relationship management in multi-layer carriers in semiconductor back-end processes, improving the automation level and reliability of material flow.

The application belongs to the field of memory devices, and particularly relates to a memory device based on two-dimensional ferromagnetic intrinsic temperature-controlled magnetization characteristics and a preparation method. The memory device comprises a substrate, a source electrode, a drain electrode, a gate electrode, a channel layer and a gate dielectric layer. The source electrode, the drain electrode and the gate electrode are arranged on the substrate. The channel layer is arranged between the source electrode and the drain electrode, and comprises a two-dimensional ferromagnetic material sheet. The gate dielectric layer covers the gate electrode and the entire channel layer. Under the condition of being higher than a carrier type transition temperature, the channel layer magnetism can be non-volatile programmed by a gate voltage. Under the condition of being lower than the transition temperature, the channel layer presents magnetic state stability to the same gate write operation, and realizes heat-controlled write protection. The two-dimensional ferromagnetic memory device does not need a complex stacking structure or an external magnetic field, and can realize programmable, non-volatile and high-stability magnetic storage functions only by temperature and gate voltage cooperation. The device structure is simple, and power consumption is low.

The invention provides a carrier wave type hot water control system and method.The carrier wave type hot water control system comprises a power supply circuit, a switch detection sensor, an electric control water pump, a carrier wave signal emitter and a carrier wave signal receiver, and the carrier wave signal emitter is electrically connected with the power supply circuit and the switch detection sensor; the carrier signal receiver is electrically connected with the power supply line and the electric control water pump respectively; the carrier signal transmitter transmits a high-frequency carrier control signal to the power supply line, the high-frequency carrier control signal is transmitted to the carrier signal receiver through the power supply line, and the carrier signal receiver controls the response state of the electric control water pump according to the received high-frequency carrier control signal. Control signal cables do not need to be arranged for the electric control water pump, the wiring usage amount of the hot water control system is reduced, then corresponding wiring auxiliary materials are omitted, and the method has the outstanding advantages that the wiring construction efficiency is improved, and the wiring construction cost is reduced.

A gate all-around (GAA) field effect transistor (FET) device and related fabrication methods are disclosed. The GAA FET device includes a P-type semiconductor PFET and an N-type semiconductor NFET having channels with different crystal orientations through a substrate. GAA PFET includes a first type of crystal orientation (e.g., lt, 110gt, or lt, 111gt) A channel structure, and a GAA NFET includes a second type of crystal orientation (e.g., lt, 100gt,) different from a first type of crystal orientation of a GAA PFET And a channel structure. The different crystalline orientation channels improve the balance of carrier mobility of two carrier types (i.e., P-type and N-type) of the GAA FET in the GAA FET device. In one aspect, different crystallographic orientation channels are provided through the substrate to increase and / or balance carrier mobility between GAA PFETs and NFETs to achieve more balanced drive intensities between these types of transistors.

The invention discloses a multi-mode fusion carrier identification method and system for unmanned forklift tail end operation, and relates to the technical field of industrial vehicle automatic driving and tail end operation, and the method comprises the steps: inputting data uploaded by a depth camera into a positioning model, and positioning the pose result of a tail end carrier according to the data; the training process of the positioning model comprises the following steps: obtaining RGB, IR and depth data uploaded by a depth camera, performing alignment processing, and marking the aligned data; and inputting the aligned data into an end-to-end multi-mode neural network model, dynamically optimizing weight distribution of RGB, IR and depth data by combining a set loss function, realizing carrier type identification and jack position sub-pixel-level positioning according to output of an optimal model obtained by training, and realizing jack position sub-pixel-level positioning by combining camera calibration parameters and vehicle body control constraints. And constructing a carrier pose calculation algorithm, and finally positioning a pose result of the tail end carrier. According to the identification method, the autonomous operation capability of the unmanned industrial vehicle in a complex dynamic environment is remarkably improved.

The invention belongs to the field of memory devices, and particularly relates to a two-dimensional ferromagnetic intrinsic temperature control magnetization characteristic-based memory device and a preparation method thereof, the memory device comprises a substrate, a source electrode, a drain electrode, a gate electrode, a channel layer and a gate dielectric layer, and the source electrode, the drain electrode and the gate electrode are arranged on the substrate; the channel layer is arranged between the source electrode and the drain electrode, and the channel layer comprises a two-dimensional ferromagnetic material sheet; the gate dielectric layer covers the gate electrode and all the channel layer, and non-volatile programming can be carried out on the magnetism of the channel layer through gate voltage under the condition that the temperature is higher than the carrier type transition temperature; under the condition of being lower than the transition temperature, the channel layer shows magnetic state stability on the same grid write operation, and thermal control write protection is achieved. The two-dimensional ferromagnetic memory device does not need a complex stacked structure or an external magnetic field, can realize a programmable, non-volatile and high-stability magnetic storage function only through cooperation of temperature and gate voltage, and is simple in structure and low in power consumption.

The invention relates to the field of data processing, and discloses an electric power knowledge processing method and device based on a knowledge graph, a medium and equipment, and the method comprises the steps: carrying out the theme analysis of original to-be-processed electric power knowledge data based on an electric power knowledge domain ontology framework, and obtaining to-be-processed electric power knowledge data; determining a subject category to which the to-be-processed power knowledge data belongs; carrying out carrier feature extraction on the to-be-processed electric power knowledge data, determining carrier types of the to-be-processed electric power knowledge data and carrier features corresponding to the carrier types, distributing unique identifiers for the carrier types, and establishing a mapping relation; mapping the to-be-processed electric power knowledge data to the dynamic knowledge graph storage model to obtain a preliminary updated knowledge graph; and executing incremental storage optimization operation to obtain an updated knowledge graph. Through the implementation of the method and the device, the problem that related technologies have obvious defects in the aspects of multi-dimensional classification of electric power knowledge, heterogeneous data structured processing, dynamic construction and storage optimization of a knowledge graph and the like is solved.

The invention discloses a reconfigurable ferroelectric transistor based on two-dimensional single-layer tungsten selenide and aluminum-scandium-nitrogen. The transistor adopts a CAA structure, programming pulse voltage is applied to a gate electrode, the polarization direction of a ferroelectric layer is changed, and a polarization electric field is coupled to a channel region; under the action of pulse programming voltage, the AlScN ferroelectric layer is subjected to polarization flipping, bound charges are induced to be generated on a channel interface, and the carrier type in a channel is changed; according to the polarization direction of the ferroelectric layer, electrons or holes are injected through the source electrode, and the channel layer adopts single-layer tungsten selenide as a channel material. According to the invention, a good nonvolatile characteristic can be maintained at an advanced process node, only a low programming voltage is needed, the power consumption is obviously reduced, the vertical integration level of the device is improved, the leakage current and the parasitic effect are obviously inhibited, and the device can be better compatible with internal programmable interconnection line resources and I / O blocks in the existing programmable logic device.

The application relates to a semiconductor device and a preparation method thereof and an electronic device, and relates to the technical field of integrated circuits. A preparation method of a semiconductor device comprises the following steps: respectively preparing a first conductive type channel layer and a first device electrode layer; wherein the first conductive type channel layer comprises a carrier type regulation layer and a first two-dimensional semiconductor material layer which are arranged in a stack; the first device electrode layer comprises a first gate structure layer and / or a first source-drain structure layer; and the first conductive type channel layer is stacked and contacted with the first device electrode layer to obtain a first device. The first conductive type channel layer and the first device electrode layer are prepared separately, and the stacking and contacting do not need a destructive process such as ion implantation, so that damage to the two-dimensional channel material is avoided.

A gate-all-around (GAA) field effect transistor (FET) device, and related fabrication methods are disclosed. The GAA FET device includes P-type semiconductor PFET(s) and N-type semiconductor NFET(s) having channels with different crystalline orientation through a substrate. The GAA PFET(s) includes a channel structure of a first type of crystalline orientation (e.g., <110> or <111>) and the GAA NFET(s) include a channel structure of a second type of crystalline orientation (e.g., <100>) different from the first type of crystalline orientation of the GAA PFET(s). The different crystalline orientation channels improve the balance of carrier mobility for both carrier types (i.e., P-type and N-type) of GAA FETs in the GAA FET device. In one aspect, the different crystalline orientation channels are provided through a substrate to increase and / or balance carrier mobility between GAA PFET(s) and NFET(s) to achieve a more balanced drive strength between these types of transistors.

Provided in the present application are a communication method and apparatus, and a computer-readable storage medium. The method comprises: on the basis of a reference signal pattern, performing first processing on a first sequence, so as to determine a target sequence; and according to a first rule, performing second processing on the target sequence in the time domain, so as to determine a reference signal, wherein the reference signal is a signal that has been subjected to time-domain mapping, the first rule is related to an orthogonal code corresponding to an antenna port number and / or the reference signal pattern, and the antenna port number is an even number. By means of the present application, multi-port transmission can be realized in a scenario where high coverage requirements are imposed and a single-carrier type is SC-QAM, thereby increasing the utilization rate of time-frequency resources.

This invention provides a lateral double-diffused field-effect transistor, its fabrication method, chip, and circuit, relating to the field of semiconductor technology. The transistor includes: a base substrate; a first transistor and a second transistor having the same carrier type, the first transistor being formed downwards on the back side of the base substrate, and the second transistor being formed upwards on the front side of the base substrate; and an intermediate sandwich structure formed laterally between a first body region and a first drift region and vertically between the first transistor and the second transistor. The intermediate sandwich structure, from bottom to top, includes a first oxide layer, an intermediate polysilicon layer, and a second oxide layer. The intermediate sandwich structure includes a first sandwich structure formed between the two body regions and part of the drift region, and a second sandwich structure formed between the remaining drift regions. The second sandwich structure serves as a third field plate for the first transistor and a fourth field plate for the second transistor. This invention can improve the transistor's operating current, reduce the transistor area, and improve the breakdown voltage.

This invention relates to a semiconductor carrier type testing method based on two-photon fluorescence, comprising the following steps: S1, selecting perovskite as the test sample and placing the test sample on the sample stage of a fluorescence spectroscopy detection system; S2, adjusting the excitation wavelength in the light source module of the fluorescence spectroscopy detection system, wherein the excitation wavelength passes through a 4f system, enters an attenuator, and generates a power I. exc1 Finally, the light is irradiated onto the sample to be tested; S3, the sample to be tested produces fluorescence, which is absorbed by the spectrometer of the fluorescence spectroscopy detection system and collected. exc1 The corresponding two-photon fluorescence intensity I 2ppl1 S4. Adjust the attenuator and repeat step S2; S5. Obtain the exponential coefficient b according to the formula, where D is a constant. This invention can conveniently, simply, and non-destructively measure the carrier type in perovskites, eliminating the influence of defects compared to single-photon excitation, and obtaining more accurate information.

The application provides a MF-TDMA satellite channel resource allocation method, and relates to the technical field of communication, and comprises the following steps: S1, determining the carrier type of the MF-TDMA system and resource allocation scoring parameters; S2, establishing multiple templates based on the running environment of the system and the carrier type; S3, calculating each template obtained in the step S2 by using the resource allocation scoring parameters and an optimization algorithm to obtain an optimal solution set of resource allocation; S4, generating the final allocation scheme of each template through the optimal solution set; and S5, performing resource allocation on the system running environment by using the final allocation scheme of each template to obtain a resource allocation result; according to the application, the templates are designed and divided in advance according to different system running environments in the resource allocation process, different resource allocation scenes and requirements can be covered, repeated and invalid allocation calculation is avoided, and the rapid scheduling and allocation of resources are realized.