1170 results about "Selenide" patented technology

A zinc ion-exchanging battery device comprising: (A) a cathode comprising two cathode active materials (a zinc ion intercalation compound and a surface-mediating material); (B) an anode containing zinc metal or zinc alloy; (C) a porous separator disposed between the cathode and the anode; and (D) an electrolyte containing zinc ions that are exchanged between the cathode and the anode during battery charge/discharge. The zinc ion intercalation compound is selected from chemically treated carbon or graphite material having an expanded inter-graphene spacing d₀₀₂ of at least 0.5 nm, or an oxide, carbide, dichalcogenide, trichalcogenide, sulfide, selenide, or telluride of niobium, zirconium, molybdenum, hafnium, tantalum, tungsten, titanium, vanadium, chromium, cobalt, manganese, iron, nickel, or a combination thereof. The surface-mediating material contains exfoliated graphite or multiple single-layer sheets or multi-layer platelets of a graphene material.

Compounds, and oligomers of the compounds, are synthesized with cyclic amine ligands attached to a metal atom. These compounds are useful for the synthesis of materials containing metals. Examples include pure metals, metal alloys, metal oxides, metal nitrides, metal phosphides, metal sulfides, metal selenides, metal tellurides, metal borides, metal carbides, metal silicides and metal germanides. Techniques for materials synthesis include vapor deposition (chemical vapor deposition and atomic layer deposition), liquid solution methods (sol-gel and precipitation) and solid-state pyrolysis. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. The films have very uniform thickness and high step coverage in narrow holes.

The five component composition consisting essentially of: (1) Water soluble antioxidant vitamin C or ascorbic acid, or any of its forms or derivatives, or mixtures thereof. (2) Oil soluble antioxidant vitamin E or Alpha-tocophorol, or any of its forms or derivatives, or mixtures thereof. (3) The element selenium, or a chemical (or composition) containing it, or mixtures thereof. The most preferred chemical containing selenium is dimethyl selenide and mixtures thereof. The words "dimethyl selenide" here and hereinafter mean dimethyl selenide and/or it's oxidation products, including dimethyl selenoxide. (4) A sulfur amino acid, in any form, or a sulfur peptide, or a sulfur protein, or any of their derivatives, or mixtures thereof. The mixture of methionine and cysteine, which contains as impurities some seleno-methionine and some selenocysteine, is preferred,-the tripeptide glutathione containing cysteine is also preferred. (5) Another antioxidant, other than vitamin C and other than vitamin E, which is synthetic or natural and water soluble or oil soluble, or a mixture of such antioxidants, or a combination of such forms thereof. The mixtures of butylated hydroxyanisole and ethoxyquin is preferred.

The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the invention a resistance variable memory element is provided having at least one silver-selenide layer in between glass layers, wherein at least one of the glass layers is a chalcogenide glass, preferably having a Ge_xSe_100−x composition.

A resistance variable memory element with improved data retention and switching characteristics switched between resistance memory states upon the application of write pulses having the same polarity. The resistance variable memory element can be provided having at least one silver-selenide layer in between glass layers, the glass layers are a chalcogenide glass having a Ge_xSe_100−x composition.

The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates.

By using the soluble salt of transition metalz Zn, Cd, Pb, Mn, Co, Ni, Cu, Ag, Sb and Bi, selenious acid or its solutl salt, or antimonous acid or its soluble salt as raw material, and hydrazine hydrate, sodium borohydride, potassium borohydride, hydroxylamine or hydrazine sulfate as reductant, and through hydrothermal reduction reaction at 100-200 deg.c in a sealed container for 2 hr to 5 days, selenides or tellurides of the said metals as semiconductor material may be synthesized. Unlike available synthesis process, which needs high temperature, toxic feedstock and complex technological course, the present invention has the advantages of low-cost material, simple apparatus, easy control, good technological reproducibility, stable product quality, etc.

The present invention is related to methods and apparatus to produce a memory cell or resistance variable material with improved data retention characteristics and higher switching speeds. In a memory cell according to an embodiment of the present invention, silver selenide and a chalcogenide glass, such as germanium selenide (Ge_xSe_(1−x)) are combined in an active layer, which supports the formation of conductive pathways in the presence of an electric potential applied between electrodes. Advantageously, embodiments of the present invention can be fabricated with relatively wide ranges for the thicknesses of the silver selenide and glass layers.

The present invention relates to systems and methods for preparing metallic precursor thin films for the growth of semiconductor compounds to be used for radiation detector and solar cell fabrication. In one aspect, there is provided a method of efficiently using expensive materials necessary for the making of solar cells.

A device and method for emitting output light utilizes a mixture of Group IIB element Selenide-based phosphor material and Group IIA element Gallium Sulfide-based phosphor material in which the Group IIA element includes Calcium, Strontium and/or Barium to convert some of the original light emitted from a light source of the device to longer wavelength light to change the optical spectrum the output light. Thus, the device and method can be used to produce white color light. The mixture of Group IIB element Selenide-based and Group IIA element Gallium Sulfide-based phosphor materials is included in a wavelength-shifting region optically coupled to the light source, which may be a blue light emitting diode (LED) die.

The invention discloses a Cu-In-Ga-Se or Cu-In-Al-Se solar battery absorbing layer target pertaining to the field of photoelectric functional materials, and a preparation method thereof. High-purity cuprous selenide powder, indium selenide powder, gallium selenide powder or aluminum selenide powder are fully mixed evenly according to the stoichiometric ratio of a CuIn1-xGaxSe2 or CuIn1-xAlxSe2 solar battery absorbing layer, and then sintered and molded by hot-pressing under protective atmosphere or made into a biscuit after cold press molding or cold isostatic pressing, and the biscuit is sintered under protective atmosphere and certain pressure or does not go through pressure sintering. The technique of the invention is simple and convenient, has high efficiency and low cost, and the produced sputtering target is provided with uniform composition and homogeneous CuIn1-xGaxSe2 or CuIn1-xAlxSe2 phase, with the relative density more than 90 percent and stable performance. The invention is mainly applied to the preparation of a Cu-In-Ga-Se and Cu-In-Al-Se solar thin film battery absorbing layer.

Methods for fabricating a photovoltaic device on complexly shaped fabricated objects, such as car bodies are disclosed. Preferably the photovoltaic device includes absorber layers comprising Copper, Indium, Gallium, Selenide (CIGS) or Copper, Zinc, Tin, Sulfide (CZTS). The method includes the following steps: a colloidal suspension of metal surface-charged nanoparticles is formed; electrophoretic deposition is used to deposit the nanopartieles in a metal thin film onto a complexly shaped surface of the substrate; the metal thin film is heated in the presence of a chalcogen source to convert the metal thin film into a metal chalcogenide thin film layer; a buffer layer is formed on the metal chalcogenide thin film layer using a chemical bath deposition; an intrinsic zinc oxide insulating layer is formed adjacent to a side of the buffer layer, opposite the metal chalcogenide thin film layer, by chemical vapor deposition; and finally, a transparent conducting oxide is formed adjacent to a side of the intrinsic zinc oxide, opposite the buffer layer, by chemical vapor deposition.

The invention relates to a method of a low cost selenide van thin film and the fast selenium sulfuration heat treatment to prepare the solar cell, which can be used in the nm selenide paint roll coating or the electrodeposit method to prepare the selenide van film, through the vacuum flash selenium sulfuration heat treatment, the high efficiency cadmium-free thin film solar cell or the photovoltaic integrated module. The thin film cell adsorption layer band gap is in the v-shaped distribution, and the flash selenium sulfuration heat treatment causes the CuSe in the porous loose thin film fusing, soaking, liquid phase serving the reaction growth of the CIGS film crystal and the self densification of the film with the In4Se3, reactive sputtering In2Se3 or In2S3 to neutralize the excessive CuxSe adsorbed by the film surface layer, going on splashing the micro excessive In2S3 to generate n-high-ohmic resistor Cu(In<1-y>Gay)<3>(SxSe<1-x>)<5> thin film cell shallow burying, then reacting the splashing deposit n-type In(OH,S)/ZnS(O,OH)/Zno(S) buffer layer with the i-layer, linking the slashing transparent conductive film/and laserprocessing collecting ellectrode to complete the preparation of the thin film cell.

The invention discloses a transition metal compound (including phosphide, sulfide, selenide and nitride) nano array which is applied to low-energy-consumption electrochemical hydrogen production as a small-molecule electrooxidation and water-electricity reduction difunctional catalytic electrode and belongs to the fields of hydrogen energy and fuel cells. According to the transition metal compound nano array, the difunctional non-noble-metal array catalytic electrode is applied to small-molecule electrooxidation and water-electricity reduction simultaneously for the first time; an electrochemical oxygen evolution reaction is replaced with a small-molecule electrooxidation reaction low in oxidation potential, and a double-electrode electrolysis system based on the difunctional catalytic electrode is constructed; low-energy-consumption and stable electrochemical hydrogen production is achieved; and the transition metal compound nano array is applicable to large-scale industrial hydrogen production.

The invention relates to a waste solution mercury removal adsorbent, a preparation method and an application method thereof. A material with high specific surface area and large pore volume is adopted as the adsorbent carrier, the material is immersed into a reaction precursor solution of a metal sulfide or metal selenide nanometer adsorbent, organic acid, organic amine, sulfhydryl compound or polyhydric alcohol is used as a reactant ligand, the reactant ligand reacts with a sulphur and selenium precursor through metal ions to generate the metal sulfide or metal selenide nanometer adsorbent, the adsorbent deposits on the surface of the carrier, and the mercury removal adsorbent with high adsorption capacity is prepared. According to the invention, the mercury removal adsorbent is prepared to a filter layer to filter the waste solution containing mercury ions; the mercury ions in a liquid phase are adsorbed onto the adsorbent to fulfill the purpose of liquid phase mercury removal by utilizing exchanging of the metal ions on the material and the mercury ions. The waste solution mercury removal adsorbent is suitable for removal and recycling of mercury in waste water of mercury-involved industries.

The invention relates to a MoSe2/Co0.85Se composite material for electrocatalytic water decomposition. The microtopography of the composite material is that a micron/nano rod of a MoSe2/Co0.85Se compound is loaded with a nano sheet of a molybdenum selenide/cobaltous selenide compound; the micron/nano rod has the length of is 1.5 to 3.5 microns and a diameter of 0.2 to 0.5 micron. A composite-material precursor CoMoO4 is firstly prepared and obtained through a hydrothermal reaction by using cobalt nitrate and sodium molybdate as reactive raw materials; afterwards, the composite material is made through the hydrothermal reaction by using sodium borohydride, selenium powder and the prepared composite-material precursor as raw materials. A preparation method of the MoSe2/Co0.85Se composite material is simple; the raw materials are easily obtained; the cost is low; the industrialized production is easily realized; the prepared and obtained composite material is good in electrocatalytic effect, and further, has favorable stability.