89 results about "Chalcogenide glass" patented technology

The present application relates to a kind of on-chip photo-thermal gas sensor and on-chip photo-thermal gas sensor assembly, the refractive index of the upper waveguide material layer of sensor ridge waveguide layer is greater than the refractive index of lower waveguide material layer, can support TM mode pump light and TE mode probe light simultaneously. That is, both high absorption of pump light and weak influence of probe light on the gas to be measured are considered, and the detection accuracy of the gas is improved. Moreover, a simpler waveguide structure is used, and the waveguide preparation process is simple, and the waveguide loss is relatively low. Compared with the photo-thermal interference method in optical fiber sensing, the interaction between pump light and the gas to be measured is greatly improved, the length of the detection waveguide is greatly shortened while ensuring high sensitivity, and the device size can be reduced to micrometer level. In addition, the waveguide structure of the on-chip photo-thermal gas sensor disclosed in the present application is prepared from chalcogenide glass, which has more obvious advantages for gas detection in the mid-infrared waveband.

The invention relates to a small-sized light-weight large-target-surface infrared athermalization optical system, and the optical system consists of a first meniscus positive lens, a meniscus negative lens, a second meniscus positive lens and a third meniscus positive lens which are sequentially and coaxially arranged from an object side to an image side, the second meniscus positive lens and the third meniscus positive lens are the same lens, the first meniscus positive lens, the second meniscus positive lens and the third meniscus positive lens are all made of chalcogenide glass IRG206, and the optical system ensures that edge imaging is clear and the image surface diameter reaches 20mm through optimal arrangement of focal power and optical materials of all the lenses and intervals among all the lenses, so that the image quality is improved. The long-wave infrared imaging device can adapt to a 1280 * 1024 array and a long-wave uncooled infrared detector with the pixel size of 12 microns, and has the advantages of high imaging quality, small size and light weight.

The invention provides a chalcogenide glass optical element suitable for an anti-reflection wave band of 8-12 microns as well as a preparation method and application of the chalcogenide glass optical element. The chalcogenide glass optical element comprises a chalcogenide glass substrate and anti-reflection films arranged on the surfaces of the two sides of the chalcogenide glass substrate, and each anti-reflection film is sequentially provided with a first Ge film layer, a first ZnS film layer, a second Ge film layer, a second ZnS film layer, a YbF3 film layer and a third ZnS film layer in a stacked mode in the direction away from the chalcogenide glass substrate. A composite protective film is arranged on the surface, far away from the chalcogenide glass substrate, of any anti-reflection film, and the composite protective film comprises a ZrO2 film layer, a SiO2 film layer and an AF film which are sequentially stacked in the direction far away from the anti-reflection film. The chalcogenide glass optical element provided by the invention can meet the requirement of high environment measurement, the salt mist environment measurement duration of the chalcogenide glass optical element exceeds 1500h, the friction capacity exceeds 5000 times (2500 times of round trip), and the average transmittance exceeds 92%.

The invention discloses a preparation method of a chalcogenide glass dual-band wide-spectrum antireflection film. The method comprises the steps of substrate cleaning, vacuum baking, ion source cleaning, sequential deposition of nine layers of thin films with specific materials and thicknesses, constant-temperature treatment after plating, cooling and workpiece taking, and double-sided plating. According to the invention, by optimizing the film system design and key process parameters, especially selectively using the ion source to assist deposition, the anti-reflection film with high transmittance (higher than 91.7% and 94.6% respectively) at the two wavebands of 3-5 [mu] m and 8-12 [mu] m is successfully prepared on the chalcogenide glass substrate. The film layer is strong in adhesive force, high in compactness, capable of passing multiple strict environmental reliability tests, excellent in comprehensive performance, good in process repeatability and suitable for a high-performance infrared optical system.

A method for improving the adhesion of a chalcogenide glass coating includes the steps of: step one, placing a chalcogenide glass lens to be coated in a cleaning solution for soaking; step two, wiping the surface of the soaked chalcogenide glass lens clean with a piece of absorbent cotton; step three, placing the wiped chalcogenide glass lens in a mixed solution of acetone and alcohol for storage; step four, removing the chalcogenide glass lens from the mixed solution and performing ultrasonic cleaning during the preparation time before coating; step five, removing the ultrasonically cleaned chalcogenide glass lens and performing IPA drying; and step six, removing the IPA-dried chalcogenide glass lens and performing coating. Thus, the adhesion between the coating and the chalcogenide glass lens after coating of the chalcogenide glass is improved.

The application belongs to the technical field of infrared coating and discloses a chalcogenide glass double-waveband antireflection film, which comprises film system structures symmetrically arranged on two sides of a chalcogenide glass substrate, wherein the film system structures are sequentially arranged from the inside to the outside of the chalcogenide glass substrate as a first Y2O3 layer, a second YbF3 layer, a third ZnSe layer, a fourth YbF3 layer, a fifth ZnSe layer, a sixth YbF3 layer, a seventh Y2O3 layer, an eighth YbF3 layer, a ninth ZnSe layer, a tenth YbF3 layer and an eleventh ZnSe layer. The film system structures arranged on the chalcogenide glass substrate can improve the transmittance of optical lenses in specific wavebands (1.064 μm waveband and 7.7-10.5 μm waveband), thereby meeting market demands.

The invention discloses a terahertz non-reciprocal transmission regulator with a double-quasi bound state effect and a method thereof, and belongs to the field of terahertz technologies and devices. The terahertz non-reciprocal transmission device with the double quasi bound state effect is formed by periodically arranging and splicing a plurality of unit structures, and each unit structure is composed of amorphous chalcogenide glass arsenic selenide with unequal rectangular grooves. According to the invention, the nonlinearity of the arsenic selenide material is combined with the asymmetry of the amorphous chalcogenide glass arsenic selenide unit with unequal grooves to generate a double quasi bound state effect, and the first quasi bound state effect and the second quasi bound state effect are utilized to realize the terahertz wave nonreciprocal transmission regulation and control of double frequency points at the same time. The terahertz non-reciprocal transmission device with the double quasi bound state effect designed by the invention is simple in structure, terahertz wave transmission can be regulated and controlled only by changing the incident power of terahertz waves without adding any external bias, and the research of an integratable non-reciprocal device is facilitated.

The invention relates to chalcogenide glass with a low thermo-optical coefficient as well as a preparation method and application of the chalcogenide glass. The chalcogenide glass with the low thermo-optical coefficient is prepared from the following components in percentage by weight: 78 to 84 percent of Se; 12%-20% of Ge; and 4%-8% of As. Through specific component design, the thermo-optical coefficient is reduced, and the influence of temperature on the optical system is reduced, so that the wavefront distortion control precision of the optical system in an extreme temperature environment is ensured.

The application discloses a kind of middle wave infrared composite glass optical fiber and preparation method thereof, and the composite glass optical fiber is composed of fluoride glass core, fluoride glass inner cladding, chalcogenide glass outer cladding, polymer coating layer and infrared end cap.The difference between the thermal expansion coefficient of fluoride glass used for core, fluoride glass used for inner cladding and chalcogenide glass used for outer cladding is less than or equal to 4×10 ‑6 The temperature interval of any two of them has overlap. First, the fluoride glass rod of core is prepared by using melt quenching technology, then the inner cladding fluoride glass sleeve and outer cladding chalcogenide glass sleeve are prepared by using spin tube technology, then the optical fiber is drawn by using rod-in-tube method, and finally the infrared end cap is fused with the optical fiber. The composite glass optical fiber can effectively avoid the fluoride glass core and inner cladding from being eroded by water vapor in the air, thereby significantly improving the 3-5 μm laser power that can be transmitted by the optical fiber and greatly prolonging the service life thereof; the preparation method has low requirement on drawing equipment and low cost.

A telephoto lens with excellent resolution is achieved. In the infrared imaging lens (1), each of a first lens (L1), a second lens (L2), and a third lens (L3) is composed of chalcogenide glass having a refractive index of 2.5-4.0 at a wavelength of 10 [mu] m, the total system focal length is at least two times the diameter of an imaging circle, the first lens and the third lens are meniscus lenses having positive refractive power, and the refractive index of the first lens (L1), the second lens (L2), and the third lens (L3) is at least two times the diameter of the imaging circle. The second lens is a meniscus lens with negative focal power.

This application discloses an optical system including a continuously zoom infrared lens and a detector for receiving images from the infrared lens. The infrared lens has a focal length of 25-75mm. The detector is an uncooled detector with a resolution of 640×512 and a pixel size of 12μm. The infrared lens consists of a first lens, a second lens, a third lens, a fourth lens, and a fifth lens arranged sequentially along the optical axis. The first lens is a meniscus lens with its convex surface facing the object side, the second lens is a biconcave lens, the third lens is a biconvex lens, the fourth lens is a meniscus lens with its convex surface facing the image side, and the fifth lens is a meniscus lens with its convex surface facing the object side. This infrared lens is composed of five chalcogenide glass lenses, and the total optical length of the system is 148mm. It has a simple and compact structure, low cost, and excellent image quality within its focal length range.

The invention discloses an acousto-optic modulator based on heterogeneous integration of PZT and chalcogenide glass, and belongs to the technical field of integrated photoelectronics. The modulator sequentially comprises a silicon substrate, a silicon dioxide lower cladding layer and a lead zirconate titanate (PZT) piezoelectric film layer from bottom to top, a chalcogenide glass optical waveguide is heterogeneously integrated on the PZT layer, and the optical waveguide is patterned into a Mach-Zehnder interferometer (MZI) structure. An interdigital transducer (IDT) made of aluminum (Al) is arranged between two arms of the MZI, and air grooves which extend to a lower cladding layer or a substrate are etched in the outer sides of the two arms respectively. The advantage of high piezoelectric coefficient of PZT and the advantage of high photoelasticity of chalcogenide glass are combined through heterogeneous integration. Aluminum is used as an IDT electrode material, so that the mass loading effect of the electrode on the surface acoustic wave is effectively reduced; acoustic resonant cavities are constructed through air grooves in the outer sides of the two arms, sound wave energy is limited in an optical waveguide area, and the acousto-optic interaction is remarkably enhanced. The structure realizes optical signal modulation with low driving voltage, low loss and high efficiency, and is suitable for an integrated optical path system of intermediate infrared and communication wavebands.

The application discloses a kind of chalcogenide glass binary surface aspherical lens manufacturing method and system, by placing chalcogenide glass preform in the mold made in advance, then into moulding press, carry out heating and obtain its current temperature, if the temperature difference between current temperature and the glass transition temperature set in advance is in the first temperature range, then chalcogenide glass preform is determined as first preform, because binary surface aspherical structure is arranged in the mold, so the mold is pressed using moulding press, to make the mold to the first preform pressing, binary surface aspherical structure in the mold can be copied on the first preform, obtain second preform, determine the current form of second preform, if the form of second preform becomes glassy, then second preform after annealing cooling treatment is taken out from the mold, obtain binary surface aspherical lens.The method greatly reduces manufacturing cost and processing cycle, production stability is higher, suitable for mass production in short time.

A chalcogenide glass includes Ga in an amount of 2.0 to 40.0% by mass; Sb in an amount of 20.0 to 75.0% by mass; S in an amount of 15.0 to 40.0% by mass; Na, K, Rb, and Cs in a total amount R [Na + K + Rb + Cs] of 0.05% by mass or more; and C1, Br, and I in a total amount X [C1 + Br + I] of 0.01% by mass or less.

The application discloses an environmentally-friendly chalcogenide glass material with excellent acousto-optic characteristics and application thereof. The chemical composition of the chalcogenide glass material is Ga x Sn y Se 100‑x‑y‑z Te z , wherein x, y and z are molar fractions of Ga, Sn and Te respectively, x = 5-10, y = 15-20, and z = 3-7. The chalcogenide glass material contains stable [GaTe n Se 4‑n ] and [SnTe n Se 4‑n ] tetrahedral structures in the micro-network structure. The value of n is 0, 1, 2, 3 or 4. The chalcogenide glass material can be applied to the acousto-optic field as an acousto-optic medium. The chalcogenide glass material has excellent comprehensive performance, remarkable environmental-friendly characteristics, low cost advantage, good mechanical processing performance and optical stability in a variable temperature environment, and provides an ideal material for low-cost and large-scale manufacturing of high-performance acousto-optic devices such as acousto-optic modulators and deflectors.

This paper provides a method for designing and fabricating a high-transmittance, color-controllable thin film with a chalcogenide glass substrate in the 8-12 μm wavelength range. The design method includes the following steps: Sa, using 550 nm as the reference wavelength for optical thin film design, and applying the film stacking formula: Sub / M0.5(L2HL)^5 0.5(KL)^5 / AIR, both sides are coated with the same film system, Sub is IRG chalcogenide glass, AIR represents air, H represents Ge, L represents ZnS, K represents YbF3, and M represents IDA; Sb, generate the film structure of Sub / IDA / ZnS / Ge / ZnS / Ge / ZnS / YbF3 / ZnS / Air through the film stack formula; Sc, the optimization target is the film color target and the transmittance target. The film color target is one or two adjacent colors of the seven colors of visible light (red, orange, yellow, green, cyan, blue, and violet). To design the film color of a certain color or two adjacent colors, the spectral reflectance peak of the design must be located at the wavelength of the corresponding color; Sd, film thickness optimization, to obtain the optimal film thickness. The optimized film structure achieves the target transmittance and the film color is controllable; Se, the optimal film thickness is input to the coating machine.

The invention discloses CsSnCl3 nanocrystal doped chalcogenide glass and acousto-optic application of the CsSnCl3 nanocrystal doped chalcogenide glass, the molar composition formula of the chalcogenide glass is 97 (0.8 GeS2-0.2 Sb2S3)-3 CsSnCl3, and CsSnCl3 nanocrystals separated out in situ through heat treatment are dispersed in the chalcogenide glass. The chalcogenide glass has the advantages as follows: the chalcogenide glass has excellent thermal mechanical properties and high robustness, the comprehensive characteristics are outstanding, the Vickers hardness, the elastic modulus, the thermo-optical coefficient, the laser damage threshold and other parameters of the chalcogenide glass are remarkably improved compared with those of current mainstream acousto-optic chalcogenide glass, and a guarantee is provided for stable operation of a device in a high-temperature and high-power environment; the CsSnCl3 nanocrystals are packaged by using the stable glass matrix, so that the problems that the Sn-based perovskite material is easy to oxidize in the environment and poor in stability are fundamentally solved; the material has good infrared acousto-optic comprehensive characteristics and an ultra-wide infrared transmission range, can be used as an acousto-optic medium to be applied to acousto-optic devices, and has a wide application prospect in the acousto-optic field.

The invention relates to the technical field of optoelectronic devices, and discloses a compact electric pumping coherent broadband intermediate infrared chalcogenide glass-silicon-based hybrid integrated light source system. The system comprises a pumping femtosecond laser module on a silicon substrate and an optical fiber spread spectrum compression module. The on-chip module generates femtosecond pulses under the pumping of an electric pump; the optical fiber module sequentially comprises a chalcogenide photonic crystal fiber and an anomalous dispersion compensator. The output end of the on-chip module is optically coupled with the input end of the chalcogenide fiber, and the output end of the chalcogenide fiber is connected to the anomalous dispersion compensator. The spectrum of the femtosecond pulse is broadened through the nonlinear effect in the chalcogenide fiber, then the pulse is compressed by the anomalous dispersion compensator, and finally broadband intermediate infrared coherent light is output. According to the system, low-power-consumption, wide-spectrum and high-coherence mid-infrared laser output is realized by a compact electric pumping framework through hybrid integration and dispersion nonlinear collaborative management.

The application discloses an infrared transparent chalcogenide glass solution which is prepared by dissolving chalcogenide glass and an organic amine solvent, wherein the organic amine solvent is an amine salt solvent containing a bifunctional group, a micro-network structure of the chalcogenide glass is formed by covalent bonding of chalcogen elements, modifiers and selectively added dopants, the chalcogen elements are S, Se or Te, the modifiers are at least one of Ge, Sb, In, Sn and As, and the dopants are at least one of Cd, Ag, CsCl, Bi, Cs and Cu, the micro-network structure of the chalcogenide glass is rich in MN a The glass solution has high transmittance and high refractive index in a wide infrared spectrum, has high light control capability, can be used for preparing an infrared liquid anamorphic lens, and is used in a middle and far infrared anamorphic imaging system, so that the imaging system is more integrated, and a new way is provided for the development of an infrared imaging system in the direction of light weight, small size and high performance.

The application discloses a kind of chalcogenide glass aspherical lens mould pressing mould core material and preparation method thereof, belong to infrared optical device manufacturing technical field.The mould core material is made of composite powder including niobium carbide powder, chromium carbide powder and metal nickel powder by discharge plasma sintering, wherein the mass content of nickel powder is 0wt% to 2wt%, the mass ratio of niobium carbide and chromium carbide is 30~35:65~70.The material is up to 8.5×10 ‑6 / K~9.5×10 ‑6 / K at 600 DEG C, and is well matched with chalcogenide glass, while having high hardness (1700~1900 HV30) and high fracture toughness (6.0~7.0 MPa·m¹ / ²).The preparation method key includes powder mixing under inert atmosphere, mould pre-pressing, and using gradient temperature and gradient pressure SPS sintering process.The application effectively solves the lens breakage and demoulding difficulty problem caused by insufficient thermal expansion coefficient of traditional mould material, and significantly improves the qualified rate of chalcogenide glass mould pressing.

The invention discloses a cesium iodide nanocrystalline composite chalcogenide glass ceramic and a preparation method thereof, the chemical formula of the cesium iodide nanocrystalline composite chalcogenide glass ceramic is xGa2S3-ySnS2-(1-x-y) CsI, x is more than or equal to 0.2 and less than or equal to 0.3, and y is more than or equal to 0.2 and less than or equal to 0.6; the preparation method comprises the following steps: preparing a glass mixture according to a chemical formula by taking simple substances Ga, Sn and S and a compound CsI as raw materials; placing the glass mixture in a sealed vacuum quartz ampoule, carrying out melt firing at 850-900 DEG C for more than 12 hours, taking out the glass mixture at 650-700 DEG C, and quenching to form glass; carrying out annealing treatment on the formed glass at 250-290 DEG C / min for 4-6 hours, and then cooling to room temperature at a rate of 0.05-0.2 DEG C / min; and carrying out heat treatment on the obtained matrix glass at 350-390 DEG C for 5-20 hours, and then carrying out furnace cooling to room temperature. The chalcogenide glass ceramic contains uniformly distributed CsI nanocrystals, has good thermal and chemical stability and mechanical strength, and can be used in the technical fields of X-ray detection and infrared thermal imaging.

A chalcogenide glass includes Ga in an amount of 2.0 to 40.0% by mass; Sb in an amount of 20.0 to 75.0% by mass; S in an amount of 15.0 to 40.0% by mass; Na, K, Rb, and Cs in a total amount R [Na+K+Rb+Cs] of 0.05% by mass or more; and Cl, Br, and I in a total amount X [Cl+Br+I] of 0.01% by mass or less.

The invention provides a Ge-As-Se-CsI glass ceramic as well as a preparation method and application thereof, and the preparation method comprises the following steps: melting and quenching raw materials to obtain basic glass, then carrying out ultra-fast heating to a crystallization temperature, carrying out short-time heat preservation, then cooling to a relatively low temperature, and carrying out long-time heat preservation, so that CsI crystal grains are uniformly separated out in a matrix, and finally obtaining the Ge-As-Se-CsI glass ceramic. According to the glass ceramic, Ge-As-Se chalcogenide glass serves as a base body, CsI crystals are evenly dispersed in the glass base body, the molar composition of the Ge-As-Se-CsI glass ceramic is represented by the chemical formula of (1-x) Ge < 0.22 > As < 0.2 > Se < 0.58-x > CsI, and x ranges from 0.01 to 0.08. Compared with the prior art, the Ge-As-Se-CsI glass ceramic prepared by the preparation method disclosed by the invention has the advantages that CsI particles are fine and are uniformly distributed, the hardness of the Ge-As-Se-CsI glass ceramic can be greatly improved on the basis of ensuring that the Ge-As-Se-CsI glass ceramic has good infrared permeability, and the application scene of the chalcogenide glass ceramic is widened.

The invention discloses a non-resonant recyclable integrated acousto-optic modulator which has a high-order controllable mode light modulation capability. According to the device, a lithium niobate-chalcogenide glass heterogeneous layer is constructed based on a silicon-silicon dioxide substrate, and the device comprises a lithium niobate film and a heterogeneous integrated chalcogenide waveguide. A multi-mode light field is formed through waveguide conical transition, and coupling of an annular loop and a multi-mode waveguide is realized by means of an asymmetric directional coupler, so that high-order mode light circulates in a modulation area, and multi-time modulation is realized. According to the structure, the modulation efficiency can be improved and the required microwave power can be reduced through a high-order mode on the premise that the interaction length is not increased. The device is compact in structure, simple in process and suitable for the fields of optical communication, photon calculation, signal processing and the like.

The invention provides chalcogenide optical glass mark sorting equipment based on multiband gray analysis, and belongs to the field of optical material detection. The device comprises a structure supporting module, a multiband light path detection module, an image gray analysis module and a servo control module. Multi-band imaging is achieved through the broadband light source, the switchable filter and the near-infrared camera, the mark is recognized in combination with gray analysis, and automatic control is achieved through a servo system. The equipment does not need vacuum sample preparation, is simple and convenient to operate, is low in cost, is suitable for on-line rapid sorting, effectively solves the problems of low efficiency and incapability of on-line detection of a traditional method, and meets the detection requirements of mass anti-mixing materials in the chalcogenide glass production process.

The invention relates to an infrared chalcogenide glass lens plated with an M2 film in the technical field of infrared optical materials, the infrared chalcogenide glass lens comprises an infrared chalcogenide glass substrate, and a functional layer and a protective layer which are plated on the infrared chalcogenide glass substrate in sequence, and the functional layer comprises at least one ZnS layer, at least one YbF3 layer, at least one Ge layer and at least one SIC layer; the functional layer and the protective layer are arranged on the infrared chalcogenide glass substrate, the ZnS layer, the Ge layer, the YbF3 layer and the SIC layer are used as the functional layer, the AlSi layer and the polysiloxane layer are used as the protective layer, and the components of the functional layer and the protective layer are selected, so that the prepared infrared chalcogenide glass lens is good in film color black-like uniformity, high in reproducibility, high in light transmittance and high in light transmittance. According to the present invention, the infrared glass lens prepared by using the method can meet the requirement that the average transmittance of the infrared ray of 8-12 [mu] m is greater than 93%, the actually measured average transmittance is greater than 93.95%, and the infrared glass lens has characteristics of strong wear resistance, high and low temperature resistance, solvent etching resistance and water immersion resistance, and can provide effects of infrared glass lens surface protection, solvent etching resistance and rain and sewage water seepage prevention.

This application discloses an athermalized long-wavelength fixed-focus lens with an effective focal length of 4.5mm and an f-number of 1.0. The athermalized long-wavelength fixed-focus lens includes a first lens, a second lens, and a third lens arranged sequentially along the optical axis. The first lens is a meniscus negative lens with its convex surface facing the object side, the second lens is a meniscus positive lens with its convex surface facing the image side, and the third lens is a biconvex lens. All three lenses are made of chalcogenide glass. When the temperature of the athermalized long-wavelength fixed-focus lens is 20°C, the air gap between the first and second lenses is 6.45mm, and the air gap between the second and third lenses is 8.6mm. This athermalized long-wavelength fixed-focus lens has a small number of lenses, a simple and compact structure, and all lenses are made of chalcogenide glass, thus reducing costs while achieving passive athermalization. This application also discloses an imaging device.

The application discloses a high-side mode rejection ratio on-chip acousto-optic modulator, comprising: an insulating substrate and a lithium niobate substrate arranged on the insulating substrate, a chalcogenide optical waveguide is heterogeneously integrated on the lithium niobate substrate, and an interdigital transducer is arranged on the chalcogenide optical waveguide, the interdigital transducer comprises a plurality of even pairs of interdigital electrodes. The chalcogenide optical waveguide is a multimode RT runway type optical waveguide. The application combines the acousto-optic characteristics of the chalcogenide glass material and the piezoelectric effect of the lithium niobate thin film, utilizes the multimode waveguide structure of the micro-ring resonator, fully confines the surface acoustic wave and the optical wave energy excited by the interdigital transducer in the waveguide structure, and realizes the amplification of a single sideband and the suppression of other side modes under the phase matching condition of the sideband signal generated through the acousto-optic interaction in the micro-ring structure, thereby realizing the high-efficiency and high-suppression-ratio acousto-optic modulation. The high-side mode rejection ratio on-chip acousto-optic modulator has the characteristics of high modulation efficiency, low cost and easy realization of on-chip large-scale integration.

The invention provides a method for recovering germanium-selenium-arsenic and arsenic-selenium-chalcogenide glass cold working mixed chips, which utilizes the physicochemical properties of all components in the germanium-selenium-arsenic and arsenic-selenium-chalcogenide glass cold working mixed chips, introduces a segmented vacuum fractionation process, and enables water, oil and other low-boiling-point pollutants in raw materials to be recycled at different heating and condensing temperatures, so as to obtain the germanium-selenium-arsenic and arsenic-selenium-chalcogenide glass cold working mixed chips. The arsenic-selenium compound and the elementary substance enter a gas phase in sequence, and separation from the Ge-Se binary compound and the high-boiling-point impurities is achieved; the fractionation residue Ge-Se binary compound is subjected to oxidizing roasting, germanium concentrate and coarse selenium dioxide are obtained, the direct recovery rate of germanium reaches 96.5%, and the comprehensive direct recovery rate of selenium reaches 97.8%. The method effectively solves the problem of difficult recovery of germanium-selenium-arsenic and arsenic-selenium chalcogenide glass cold processing mixed chips, realizes green and efficient cyclic utilization of rare and precious metal elements in the material, is simple in process and environment-friendly, and provides support for benign development of the chalcogenide glass industry in China.

The application belongs to the technical field of glass material mould pressing and relates to a chalcogenide glass small-diameter rod material mould pressing forming device and process. The mould pressing forming device comprises a mould for placing a mould material, a constant-temperature box for heating the mould, and a mould pressing mechanism for mould pressing the mould material in the mould; the mould comprises a mould sleeve, a mould core and a pressure head, the mould pressing mechanism is provided with a pressure rod, and the constant-temperature box is provided with a box body for accommodating the mould; the mould sleeve comprises a mould sleeve base and a mould sleeve pipe arranged on the mould sleeve base, the mould core is a columnar structure formed by splicing at least two mould core blocks and locking and fixing through the mould sleeve, and the mould core is provided with a plurality of mould pressing holes with opening directions towards the mould material in the mould pressing direction. The chalcogenide glass small-diameter rod material mould pressing forming device has a simple structure, adopts a mould pressing design, can replace mould cores of different specifications, and prepares small-diameter chalcogenide glass rod materials of different specifications; meanwhile, the problem that a glass rod prepared by a traditional extrusion method is prone to large diameter deviation and bending is solved.