141 results about "Chalcogenide glass" patented technology

The invention discloses acousto-optic chalcogenide glass with a high laser damage threshold, the chemical composition formula of the acousto-optic chalcogenide glass is GexSySez, x, y and z respectively represent the mole fractions of Ge, S and Se, x = 10-30, y = 5-40, z = 40-70, x + y + z = 100, and the microscopic network structure of the acousto-optic chalcogenide glass contains a [GeSe4] tetrahedron, a [GeSSe3] tetrahedron, a [GeS2Se2] tetrahedron, a [GeS3Se] tetrahedron, a [GeS4] tetrahedron and a Se ring. The acousto-optic chalcogenide glass provided by the invention has a relatively high laser damage threshold Fth (9.72-15.58 J / cm < 2 > at1550 / 20ns / 5kHz), a relatively low thermo-optic coefficient dn / dT and good acousto-optic characteristics and mechanical properties, is high in near-infrared band transmittance, and has a relatively high laser damage threshold while ensuring a high acousto-optic quality factor. The material can be used as a material basis for developing high-performance and high-stability infrared acousto-optic modulation devices.

The present application relates to a kind of on-chip photo-thermal gas sensor and on-chip photo-thermal gas sensor assembly, the refractive index of the upper waveguide material layer of sensor ridge waveguide layer is greater than the refractive index of lower waveguide material layer, can support TM mode pump light and TE mode probe light simultaneously. That is, both high absorption of pump light and weak influence of probe light on the gas to be measured are considered, and the detection accuracy of the gas is improved. Moreover, a simpler waveguide structure is used, and the waveguide preparation process is simple, and the waveguide loss is relatively low. Compared with the photo-thermal interference method in optical fiber sensing, the interaction between pump light and the gas to be measured is greatly improved, the length of the detection waveguide is greatly shortened while ensuring high sensitivity, and the device size can be reduced to micrometer level. In addition, the waveguide structure of the on-chip photo-thermal gas sensor disclosed in the present application is prepared from chalcogenide glass, which has more obvious advantages for gas detection in the mid-infrared waveband.

The invention discloses Ge-Sn-Se-S acousto-optic chalcogenide glass, the chemical composition formula of the Ge-Sn-Se-S acousto-optic chalcogenide glass is Ge20SnxSe80-x-ySy, x and y respectively represent molar fractions of Sn and S, x is equal to 5-12.5, y is equal to 0-25, and a basic network unit of a glass frame of the Ge-Sn-Se acousto-optic chalcogenide glass is of a stable tetrahedral structure with Ge or Sn as the center. The acousto-optic chalcogenide glass is large in composition regulation and control range, easy to form, non-toxic, environment-friendly, green and quaternary chalcogenide glass system, high in linearity and refractive index and high in acousto-optic performance, the acousto-optic quality factor M2 under the wavelength of 1550 nm is 211.8 * 10 <-18 > s < 3 > / g to 348.9 * 10 <-18 > s < 3 > / g, the ultrasonic attenuation alpha under the ultrasonic frequency of 10 MHz is 0.72 dB / cm to 4.89 dB / cm, the laser damage threshold value is 2.94 J / cm < 2 > to 15.54 J / cm < 2 >, and the acousto-optic chalcogenide glass can be used for preparing the acousto-optic chalcogenide glass. The material has the potential of being applied to acousto-optic devices for high-power laser modulation, and can be widely applied to the acousto-optic field as an acousto-optic medium.

The invention relates to a small-sized light-weight large-target-surface infrared athermalization optical system, and the optical system consists of a first meniscus positive lens, a meniscus negative lens, a second meniscus positive lens and a third meniscus positive lens which are sequentially and coaxially arranged from an object side to an image side, the second meniscus positive lens and the third meniscus positive lens are the same lens, the first meniscus positive lens, the second meniscus positive lens and the third meniscus positive lens are all made of chalcogenide glass IRG206, and the optical system ensures that edge imaging is clear and the image surface diameter reaches 20mm through optimal arrangement of focal power and optical materials of all the lenses and intervals among all the lenses, so that the image quality is improved. The long-wave infrared imaging device can adapt to a 1280 * 1024 array and a long-wave uncooled infrared detector with the pixel size of 12 microns, and has the advantages of high imaging quality, small size and light weight.

The invention provides a chalcogenide glass optical element suitable for an anti-reflection wave band of 8-12 microns as well as a preparation method and application of the chalcogenide glass optical element. The chalcogenide glass optical element comprises a chalcogenide glass substrate and anti-reflection films arranged on the surfaces of the two sides of the chalcogenide glass substrate, and each anti-reflection film is sequentially provided with a first Ge film layer, a first ZnS film layer, a second Ge film layer, a second ZnS film layer, a YbF3 film layer and a third ZnS film layer in a stacked mode in the direction away from the chalcogenide glass substrate. A composite protective film is arranged on the surface, far away from the chalcogenide glass substrate, of any anti-reflection film, and the composite protective film comprises a ZrO2 film layer, a SiO2 film layer and an AF film which are sequentially stacked in the direction far away from the anti-reflection film. The chalcogenide glass optical element provided by the invention can meet the requirement of high environment measurement, the salt mist environment measurement duration of the chalcogenide glass optical element exceeds 1500h, the friction capacity exceeds 5000 times (2500 times of round trip), and the average transmittance exceeds 92%.

The invention discloses a preparation method of a chalcogenide glass dual-band wide-spectrum antireflection film. The method comprises the steps of substrate cleaning, vacuum baking, ion source cleaning, sequential deposition of nine layers of thin films with specific materials and thicknesses, constant-temperature treatment after plating, cooling and workpiece taking, and double-sided plating. According to the invention, by optimizing the film system design and key process parameters, especially selectively using the ion source to assist deposition, the anti-reflection film with high transmittance (higher than 91.7% and 94.6% respectively) at the two wavebands of 3-5 [mu] m and 8-12 [mu] m is successfully prepared on the chalcogenide glass substrate. The film layer is strong in adhesive force, high in compactness, capable of passing multiple strict environmental reliability tests, excellent in comprehensive performance, good in process repeatability and suitable for a high-performance infrared optical system.

The application provides a Ge-As-Se-CsCl glass ceramic and a preparation method thereof, which comprises a base and CsCl crystals uniformly dispersed in the base; the base is a Ge-As-Se chalcogenide glass; the CsCl crystals are uniformly dispersed in the base in a nano form; the molar composition of the Ge-As-Se-CsCl glass ceramic is represented by a chemical formula as follows: (1-y)Ge 0.2 As x Se (0.8‑x) -yCsCl, the range of x is 0.1-0.7, and the range of y is 0.05-0.2. Compared with the prior art, the Ge-As-Se-CsCl glass ceramic prepared by two-stage heat treatment crystallization disclosed by the application can ensure that the Ge-As-Se-CsCl glass ceramic has good infrared transmittance, can greatly improve the hardness of the Ge-As-Se-CsCl glass ceramic, and widens the application range of the chalcogenide glass ceramic.

A method for improving the adhesion of a chalcogenide glass coating includes the steps of: step one, placing a chalcogenide glass lens to be coated in a cleaning solution for soaking; step two, wiping the surface of the soaked chalcogenide glass lens clean with a piece of absorbent cotton; step three, placing the wiped chalcogenide glass lens in a mixed solution of acetone and alcohol for storage; step four, removing the chalcogenide glass lens from the mixed solution and performing ultrasonic cleaning during the preparation time before coating; step five, removing the ultrasonically cleaned chalcogenide glass lens and performing IPA drying; and step six, removing the IPA-dried chalcogenide glass lens and performing coating. Thus, the adhesion between the coating and the chalcogenide glass lens after coating of the chalcogenide glass is improved.

The utility model discloses a catadioptric thermal imaging optical system, which comprises a diaphragm, a second reflector, a lenslet and a first reflector which are sequentially distributed at intervals along an optical axis S from an object side to an imaging surface, and the outer diameter of the diaphragm and the outer diameter of the first reflector are larger than the outer diameter of the second reflector. A through hole is dug in the middle of the first reflector, a small lens is arranged on the left side of the through hole, the diaphragm is made of chalcogenide glass or germanium materials, the first reflector is an aspheric reflector with a concave face, the second reflector is an aspheric reflector with a convex face, and the concave face faces the diaphragm and is opposite to the convex face. Light emitted from the object side and with the wavelength ranging from 8 micrometers to 14 micrometers penetrates through the periphery of the diaphragm to reach the first reflector, is reflected by the concave face for the first time to reach the second reflector, is reflected by the convex face for the second time and then is refracted by the small lens to be imaged on the imaging face, the manufacturing cost is low, and the imaging quality is good.

The application belongs to the technical field of infrared coating and discloses a chalcogenide glass double-waveband antireflection film, which comprises film system structures symmetrically arranged on two sides of a chalcogenide glass substrate, wherein the film system structures are sequentially arranged from the inside to the outside of the chalcogenide glass substrate as a first Y2O3 layer, a second YbF3 layer, a third ZnSe layer, a fourth YbF3 layer, a fifth ZnSe layer, a sixth YbF3 layer, a seventh Y2O3 layer, an eighth YbF3 layer, a ninth ZnSe layer, a tenth YbF3 layer and an eleventh ZnSe layer. The film system structures arranged on the chalcogenide glass substrate can improve the transmittance of optical lenses in specific wavebands (1.064 μm waveband and 7.7-10.5 μm waveband), thereby meeting market demands.

The invention discloses a terahertz non-reciprocal transmission regulator with a double-quasi bound state effect and a method thereof, and belongs to the field of terahertz technologies and devices. The terahertz non-reciprocal transmission device with the double quasi bound state effect is formed by periodically arranging and splicing a plurality of unit structures, and each unit structure is composed of amorphous chalcogenide glass arsenic selenide with unequal rectangular grooves. According to the invention, the nonlinearity of the arsenic selenide material is combined with the asymmetry of the amorphous chalcogenide glass arsenic selenide unit with unequal grooves to generate a double quasi bound state effect, and the first quasi bound state effect and the second quasi bound state effect are utilized to realize the terahertz wave nonreciprocal transmission regulation and control of double frequency points at the same time. The terahertz non-reciprocal transmission device with the double quasi bound state effect designed by the invention is simple in structure, terahertz wave transmission can be regulated and controlled only by changing the incident power of terahertz waves without adding any external bias, and the research of an integratable non-reciprocal device is facilitated.

The invention relates to chalcogenide glass with a low thermo-optical coefficient as well as a preparation method and application of the chalcogenide glass. The chalcogenide glass with the low thermo-optical coefficient is prepared from the following components in percentage by weight: 78 to 84 percent of Se; 12%-20% of Ge; and 4%-8% of As. Through specific component design, the thermo-optical coefficient is reduced, and the influence of temperature on the optical system is reduced, so that the wavefront distortion control precision of the optical system in an extreme temperature environment is ensured.

The utility model discloses an annealing device for chalcogenide glass production, and relates to the technical field of high-purity infrared chalcogenide glass preparation, the annealing device comprises an annealing kiln assembly and exhaust assemblies, the exhaust assemblies are symmetrically arranged at the front and back of the top of the annealing kiln assembly, and the surface of the top of a track is connected with a walking plate trailer. A stabilizing frame is erected on the top of the walking plate trailer, and meanwhile limiting frames are installed on the surface of the top of the walking plate trailer in a bilateral symmetry mode. According to the annealing device for chalcogenide glass production, the exhaust assembly is mounted at the top of the annealing kiln assembly, so that after glass is returned and heated by the annealing kiln assembly, heat in the annealing kiln main body is discharged as required, and the heat discharge speed is controlled, so that convenient annealing operation is realized, the use convenience of the device is guaranteed, and the production efficiency is improved. In addition, a stabilizing frame and a limiting frame are installed on the surface of the top of the walking plate trailer, adjustment can be conducted by being matched with the size of the glass within a certain adjustment range, and therefore stability and safety in the moving and transporting process are guaranteed.

The invention provides chalcogenide glass with a negative refractive index temperature coefficient as well as a preparation method and application of the chalcogenide glass, and belongs to the technical field of infrared chalcogenide glass. The chemical formula of the chalcogenide glass provided by the invention is As < x > Se < 100-x >, and x ranges from 20 to 36. By optimizing the chemical formula of the chalcogenide glass, the refractive index and the dn / dT value of the chalcogenide glass can be controlled, and the dn / dT value of the chalcogenide glass is negative, so that the characteristic that the refractive index generated by a conventional lens changes along with the temperature can be effectively compensated, and the heat effect is reduced or even eliminated; the linear refractive index value of the chalcogenide glass provided by the invention is reduced along with the increase of the dn / dT value, so that the chalcogenide glass can be used as a passive athermalization lens element in an infrared system, and is of great significance to athermalization of the system. The result of the embodiment shows that the dn / dT value of the chalcogenide glass provided by the invention is-45 to-19 ppm / K, and the refractive index of the chalcogenide glass is 2.61 to 2.68.

The invention discloses a medium-wave infrared microscope lens for high-speed temperature measurement, and belongs to the field of infrared temperature measurement. The lens group is mainly made of germanium, monocrystalline silicon and chalcogenide glass. Comprising six spherical lenses and two aspherical lenses, wherein the sixth lens and the eighth lens are double-sided aspherical lenses; the first lens, the second lens, the third lens and the fifth lens are made of monocrystalline silicon. The fourth lens, the sixth lens and the eighth lens are made of germanium; the seventh lens is made of IRG24 chalcogenide glass; the lens group is formed by coaxially installing and arranging first to eighth lenses in sequence. The device has the advantages of high magnification and large numerical aperture, can realize extremely high light inlet efficiency and imaging quality, and ensures the precision of temperature field measurement in a micron-sized high-speed scene. The device has the advantage of long working distance, so that the device is more suitable for measurement scenes needing protective measures and other front optical instruments.

The application discloses a kind of middle wave infrared composite glass optical fiber and preparation method thereof, and the composite glass optical fiber is composed of fluoride glass core, fluoride glass inner cladding, chalcogenide glass outer cladding, polymer coating layer and infrared end cap.The difference between the thermal expansion coefficient of fluoride glass used for core, fluoride glass used for inner cladding and chalcogenide glass used for outer cladding is less than or equal to 4×10 ‑6 The temperature interval of any two of them has overlap. First, the fluoride glass rod of core is prepared by using melt quenching technology, then the inner cladding fluoride glass sleeve and outer cladding chalcogenide glass sleeve are prepared by using spin tube technology, then the optical fiber is drawn by using rod-in-tube method, and finally the infrared end cap is fused with the optical fiber. The composite glass optical fiber can effectively avoid the fluoride glass core and inner cladding from being eroded by water vapor in the air, thereby significantly improving the 3-5 μm laser power that can be transmitted by the optical fiber and greatly prolonging the service life thereof; the preparation method has low requirement on drawing equipment and low cost.

A telephoto lens with excellent resolution is achieved. In the infrared imaging lens (1), each of a first lens (L1), a second lens (L2), and a third lens (L3) is composed of chalcogenide glass having a refractive index of 2.5-4.0 at a wavelength of 10 [mu] m, the total system focal length is at least two times the diameter of an imaging circle, the first lens and the third lens are meniscus lenses having positive refractive power, and the refractive index of the first lens (L1), the second lens (L2), and the third lens (L3) is at least two times the diameter of the imaging circle. The second lens is a meniscus lens with negative focal power.

The utility model relates to a low-cost large-target-surface infrared double-view-field lens, which belongs to the technical field of optical lenses and comprises a shell, an optical system assembly is arranged in the shell, and a round bin is fixed on the front wall of the shell. The optical system assembly comprises a first lens fixed to the left end of the inner cavity of the shell and further comprises a second lens sliding in the shell. The low-cost large-target-surface infrared double-field-of-view lens is suitable for a large-target-surface detector with the resolution ratio of 1280 * 1024, the total number of lenses of the lens is small, the lens is provided with four lenses, the lenses of the lens adopt chalcogenide glass with relatively low price to replace most of germanium glass with high price, the cost of the infrared double-field-of-view lens can be greatly reduced, and the large-target-surface infrared double-field-of-view lens is suitable for large-target-surface detectors with the resolution ratio of 1280 * 1024. And the density of chalcogenide glass adopted by the lens is smaller than that of germanium glass, so that the weight can be reduced, the infrared double-view-field lens can be better applied to a photoelectric system with high weight requirement, and meanwhile, the infrared double-view-field lens can be switched between a short-focus large view field and a long-focus small view field.

The invention discloses a preparation method of an equivalent large-refractive-index-difference mid-infrared gradient optical fiber based on an alternating refractive index structure, which is characterized by comprising the following steps of: designing the thickness of chalcogenide glass with different refractive indexes: forming a first periodic structure by a low-refractive-index material and a high-refractive-index material on the adjacent outer side of the low-refractive-index material from the original point of a fiber core to the outside in sequence; n + 1 periodic structures are designed outwards in sequence, the outward thickness increment of the low-refractive-index material is xi, i = 1, 2, 3... n, and xi-xi-1 is progressively increased according to the linearity and the power exponent; carrying out precision polishing and grinding on the single chalcogenide glass, carrying out ultrasonic cleaning, stacking and extruding to prepare an all-solid-state optical fiber preform; and finally, inserting into a pre-drilled cladding glass tube for assembling, introducing a protective atmosphere, performing thermal extension processing, and drawing to obtain the equivalent large-refractive-index-difference intermediate infrared gradient optical fiber, which has the advantages that the large refractive index difference and the accurate and flexible regulation and control of a refractive index profile curve can be realized.

This application discloses an optical system including a continuously zoom infrared lens and a detector for receiving images from the infrared lens. The infrared lens has a focal length of 25-75mm. The detector is an uncooled detector with a resolution of 640×512 and a pixel size of 12μm. The infrared lens consists of a first lens, a second lens, a third lens, a fourth lens, and a fifth lens arranged sequentially along the optical axis. The first lens is a meniscus lens with its convex surface facing the object side, the second lens is a biconcave lens, the third lens is a biconvex lens, the fourth lens is a meniscus lens with its convex surface facing the image side, and the fifth lens is a meniscus lens with its convex surface facing the object side. This infrared lens is composed of five chalcogenide glass lenses, and the total optical length of the system is 148mm. It has a simple and compact structure, low cost, and excellent image quality within its focal length range.

The invention provides a chalcogenide glass lens high-cleanliness surface cleaning method. The chalcogenide glass lens high-cleanliness surface cleaning method comprises the steps that S1, a chalcogenide glass lens is soaked in a first cleaning solution to dissolve an organic compound on the surface; s2, carrying out first ultrasonic cleaning on the chalcogenide glass lens through a second cleaning solution so as to strip residual organic compounds after dissolution; s3, washing the chalcogenide glass lens with tap water; s4, the chalcogenide glass lens is soaked in a third cleaning solution to dissolve polishing powder particles; s5, performing secondary ultrasonic treatment on the chalcogenide glass lens through deionized water so as to strip residual polishing powder particles after dissolution; s6, the chalcogenide glass lens is washed with deionized water; and S7, drying the chalcogenide glass lens through high-purity nitrogen. According to the method, a non-contact cleaning process is formed, cleaning thoroughness is improved, the high-cleanliness surface of the chalcogenide glass lens can be achieved, and the application requirement of the chalcogenide glass lens in an infrared system is met.

The present invention provides a method for preparing a P-Se chalcogenide glass with high infrared transmittance, comprising: S1: selecting a P source material and a Se source material, mixing the two, and then performing vacuum distillation and purification in combination with a deoxidizer to obtain a purified mixture; the vacuum distillation and deoxidizer combination comprising: adding the two mixed materials to a reaction container, preheating the reaction container in advance and evacuating the container simultaneously, wherein the preheating temperature is 50-100°C, and the vacuum degree of the evacuation is 5×10 ‑5 Pa or higher; S2: sequentially melting, quenching, and annealing the purified mixture to obtain a P-Se chalcogenide glass with high infrared transmittance. The present invention also includes this P-Se chalcogenide glass with high infrared transmittance, comprising: P: 35-45 at.%; Se: 55-65 at.%. The chalcogenide glass prepared by the present invention has high transmittance, resolving the problems of the prior art.

The invention discloses an acousto-optic modulator based on heterogeneous integration of PZT and chalcogenide glass, and belongs to the technical field of integrated photoelectronics. The modulator sequentially comprises a silicon substrate, a silicon dioxide lower cladding layer and a lead zirconate titanate (PZT) piezoelectric film layer from bottom to top, a chalcogenide glass optical waveguide is heterogeneously integrated on the PZT layer, and the optical waveguide is patterned into a Mach-Zehnder interferometer (MZI) structure. An interdigital transducer (IDT) made of aluminum (Al) is arranged between two arms of the MZI, and air grooves which extend to a lower cladding layer or a substrate are etched in the outer sides of the two arms respectively. The advantage of high piezoelectric coefficient of PZT and the advantage of high photoelasticity of chalcogenide glass are combined through heterogeneous integration. Aluminum is used as an IDT electrode material, so that the mass loading effect of the electrode on the surface acoustic wave is effectively reduced; acoustic resonant cavities are constructed through air grooves in the outer sides of the two arms, sound wave energy is limited in an optical waveguide area, and the acousto-optic interaction is remarkably enhanced. The structure realizes optical signal modulation with low driving voltage, low loss and high efficiency, and is suitable for an integrated optical path system of intermediate infrared and communication wavebands.

The application discloses a kind of chalcogenide glass binary surface aspherical lens manufacturing method and system, by placing chalcogenide glass preform in the mold made in advance, then into moulding press, carry out heating and obtain its current temperature, if the temperature difference between current temperature and the glass transition temperature set in advance is in the first temperature range, then chalcogenide glass preform is determined as first preform, because binary surface aspherical structure is arranged in the mold, so the mold is pressed using moulding press, to make the mold to the first preform pressing, binary surface aspherical structure in the mold can be copied on the first preform, obtain second preform, determine the current form of second preform, if the form of second preform becomes glassy, then second preform after annealing cooling treatment is taken out from the mold, obtain binary surface aspherical lens.The method greatly reduces manufacturing cost and processing cycle, production stability is higher, suitable for mass production in short time.

The utility model discloses an infrared chalcogenide glass blank cutting device, and relates to the technical field of high-purity infrared chalcogenide glass preparation, the infrared chalcogenide glass blank cutting device comprises a working table and limiting assemblies, the bottom of the working table is provided with supporting column legs, and the two sides of the upper end of the working table are provided with the limiting assemblies; the limiting assembly comprises a first mounting block, a threaded mounting groove, a threaded rotating rod, a first clamping block, a limiting sliding block, a second mounting block, an electric telescopic rod, a second clamping block and a limiting sliding groove, the threaded mounting groove is formed in the middle end of the interior of the first mounting block, and the threaded rotating rod is connected to the interior of the threaded mounting groove; a first clamping block is arranged at the front end of the threaded rotating rod, and meanwhile limiting sliding blocks are additionally arranged on the two sides of the lower end of the first clamping block. According to the infrared chalcogenide glass blank cutting device, infrared chalcogenide glass blanks of different sizes can be rapidly limited, the subsequent machining yield is increased, and meanwhile the overall use efficiency of the cutting device is improved.

A chalcogenide glass includes Ga in an amount of 2.0 to 40.0% by mass; Sb in an amount of 20.0 to 75.0% by mass; S in an amount of 15.0 to 40.0% by mass; Na, K, Rb, and Cs in a total amount R [Na + K + Rb + Cs] of 0.05% by mass or more; and C1, Br, and I in a total amount X [C1 + Br + I] of 0.01% by mass or less.

The utility model discloses a chalcogenide glass mould pressing mould, and relates to the technical field of high purity infrared chalcogenide glass preparation, the chalcogenide glass mould pressing mould comprises a base, an auxiliary dismounting assembly and a lower mould assembly, a bearing seat is fixed above the base through a fixing rod, and the auxiliary dismounting assembly is arranged in the middle of the upper part of the bearing seat; and the auxiliary dismounting and mounting assembly comprises positioning corners, damping rotating shafts, rotating rods, positioning plates and rubber layers, the positioning corners are fixedly connected with the bearing seat, the four positioning corners are arranged in an L shape, and one sides of the positioning corners are rotationally connected with the rotating rods through the damping rotating shafts. According to the chalcogenide glass mold pressing mold, the mounting plate can be arranged among the four L-shaped positioning corners, so that the four corners of the mounting plate can be positioned and prevented from deviation through the positioning corners, the rotating rods and the positioning plates are conveniently driven to rotate through the damping rotating shafts, and the four positioning plates are used for positioning and pressing the mounting plate, so that the mounting plate is conveniently mounted and dismounted; and therefore, the mounting plate with different lower die assemblies can be replaced conveniently.

The application discloses an environmentally-friendly chalcogenide glass material with excellent acousto-optic characteristics and application thereof. The chemical composition of the chalcogenide glass material is Ga x Sn y Se 100‑x‑y‑z Te z , wherein x, y and z are molar fractions of Ga, Sn and Te respectively, x = 5-10, y = 15-20, and z = 3-7. The chalcogenide glass material contains stable [GaTe n Se 4‑n ] and [SnTe n Se 4‑n ] tetrahedral structures in the micro-network structure. The value of n is 0, 1, 2, 3 or 4. The chalcogenide glass material can be applied to the acousto-optic field as an acousto-optic medium. The chalcogenide glass material has excellent comprehensive performance, remarkable environmental-friendly characteristics, low cost advantage, good mechanical processing performance and optical stability in a variable temperature environment, and provides an ideal material for low-cost and large-scale manufacturing of high-performance acousto-optic devices such as acousto-optic modulators and deflectors.

This paper provides a method for designing and fabricating a high-transmittance, color-controllable thin film with a chalcogenide glass substrate in the 8-12 μm wavelength range. The design method includes the following steps: Sa, using 550 nm as the reference wavelength for optical thin film design, and applying the film stacking formula: Sub / M0.5(L2HL)^5 0.5(KL)^5 / AIR, both sides are coated with the same film system, Sub is IRG chalcogenide glass, AIR represents air, H represents Ge, L represents ZnS, K represents YbF3, and M represents IDA; Sb, generate the film structure of Sub / IDA / ZnS / Ge / ZnS / Ge / ZnS / YbF3 / ZnS / Air through the film stack formula; Sc, the optimization target is the film color target and the transmittance target. The film color target is one or two adjacent colors of the seven colors of visible light (red, orange, yellow, green, cyan, blue, and violet). To design the film color of a certain color or two adjacent colors, the spectral reflectance peak of the design must be located at the wavelength of the corresponding color; Sd, film thickness optimization, to obtain the optimal film thickness. The optimized film structure achieves the target transmittance and the film color is controllable; Se, the optimal film thickness is input to the coating machine.

The invention discloses CsSnCl3 nanocrystal doped chalcogenide glass and acousto-optic application of the CsSnCl3 nanocrystal doped chalcogenide glass, the molar composition formula of the chalcogenide glass is 97 (0.8 GeS2-0.2 Sb2S3)-3 CsSnCl3, and CsSnCl3 nanocrystals separated out in situ through heat treatment are dispersed in the chalcogenide glass. The chalcogenide glass has the advantages as follows: the chalcogenide glass has excellent thermal mechanical properties and high robustness, the comprehensive characteristics are outstanding, the Vickers hardness, the elastic modulus, the thermo-optical coefficient, the laser damage threshold and other parameters of the chalcogenide glass are remarkably improved compared with those of current mainstream acousto-optic chalcogenide glass, and a guarantee is provided for stable operation of a device in a high-temperature and high-power environment; the CsSnCl3 nanocrystals are packaged by using the stable glass matrix, so that the problems that the Sn-based perovskite material is easy to oxidize in the environment and poor in stability are fundamentally solved; the material has good infrared acousto-optic comprehensive characteristics and an ultra-wide infrared transmission range, can be used as an acousto-optic medium to be applied to acousto-optic devices, and has a wide application prospect in the acousto-optic field.