Resistance variable memory elements based on polarized silver-selenide network growth

a network growth and resistance variable technology, applied in the direction of digital storage, instruments, electrical appliances, etc., can solve the problems of volatile ram memory elements and loss of stored data

Inactive Publication Date: 2005-07-28
ROUND ROCK RES LLC
View PDF99 Cites 28 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0005] In one aspect, exemplary embodiments of the invention provide a resistance variable memory element and a method of forming the same in which a doped chalcogenide glass contains regions of polarizable metal-chalcogen material forming a conducting channel present within a chalcogenide glass backbone. The conducting channel can receive and expel metal ions in and out of it to set a particular resistance state for the memory element in response to write and erase voltages.

Problems solved by technology

Typically, RAM memory elements are volatile, in that stored data is lost once the power source is disconnected or removed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistance variable memory elements based on polarized silver-selenide network growth
  • Resistance variable memory elements based on polarized silver-selenide network growth
  • Resistance variable memory elements based on polarized silver-selenide network growth

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] In the following detailed description, reference is made to various specific embodiments of the invention. These embodiments are described with sufficient detail to enable those skilled in the art to practice the invention. It is to be understood that other embodiments may be employed, and that various structural, logical and electrical changes may be made without departing from the spirit or scope of the invention.

[0015] The term “substrate” used in the following description may include any supporting structure including but not limited to a glass, plastic, or semiconductor substrate that has an exposed substrate surface. A semiconductor substrate should be understood to include silicon, silicon-on-insulator (SOI), silicon-on-sapphire (SOS), doped and undoped semiconductors, epitaxial layers of silicon supported by a base semiconductor foundation, and other semiconductor structures which may not be silicon-based. When reference is made to a semiconductor substrate in the fo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a resistance variable memory element including polarizable metal-chalcogen regions within a doped chalcogenide glass. A method for physically aligning the polarizable metal-chalcogen regions to form a conducting channel is provided. The invention also relates to a resistance variable memory element including metal-chalcogen regions within a chalcogenide glass backbone. The metal-chalcogen regions and glass regions bond to form a conducting channel. In addition, a method of operating such memory elements is provided in which metal ions move in and out of the conducting channels in response to applied voltages, thereby affecting the resistance of the memory elements.

Description

FIELD OF THE INVENTION [0001] The invention relates to the field of random access memory (RAM) devices formed using a chalcogenide-based resistance variable memory element. BACKGROUND OF THE INVENTION [0002] A well-known semiconductor memory component is a random access memory (RAM). RAM permits repeated read and write operations on memory elements. Typically, RAM memory elements are volatile, in that stored data is lost once the power source is disconnected or removed. Non-limiting examples of RAM devices which contain such memory elements include dynamic random access memory (DRAM), synchronized dynamic random access memory (SDRAM) and static random access memory (SRAM). DRAM's and SDRAM's typically store data in capacitors which require periodic refreshing to maintain the stored data. [0003] Recently, resistance variable memory elements have been investigated for suitability as semi-volatile and non-volatile random access memory elements. A class of such devices include an insula...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(United States)
IPC IPC(8): G11C11/00G11C13/02H01L45/00
CPCG11C13/0069G11C13/02G11C2013/009G11C2213/11G11C2213/51H01L45/085H01L45/1658H01L45/1266H01L45/143H01L45/1608H01L45/1616H01L45/1625H01L45/1233H10N70/245H10N70/8416H10N70/8825H10N70/023H10N70/021H10N70/026H10N70/046H10N70/826
Inventor CAMPBELL, KRISTY A.
Owner ROUND ROCK RES LLC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap