Resistance variable memory elements based on polarized silver-selenide network growth

a network growth and resistance variable technology, applied in the direction of digital storage, instruments, electrical appliances, etc., can solve the problems of volatile ram memory elements and loss of stored data
US20050162907A1Inactive Publication Date: 2005-07-28ROUND ROCK RES LLC
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
ROUND ROCK RES LLC
Publication Date
2005-07-28
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a resistance variable memory element including polarizable metal-chalcogen regions within a doped chalcogenide glass. A method for physically aligning the polarizable metal-chalcogen regions to form a conducting channel is provided. The invention also relates to a resistance variable memory element including metal-chalcogen regions within a chalcogenide glass backbone. The metal-chalcogen regions and glass regions bond to form a conducting channel. In addition, a method of operating such memory elements is provided in which metal ions move in and out of the conducting channels in response to applied voltages, thereby affecting the resistance of the memory elements.
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Description

FIELD OF THE INVENTION

[0001] The invention relates to the field of random access memory (RAM) devices formed using a chalcogenide-based resistance variable memory element. BACKGROUND OF THE INVENTION

[0002] A well-known semiconductor memory component is a random access memory (RAM). RAM permits repeated read and write operations on memory elements. Typically, RAM memory elements are volatile, in that stored data is lost once the power source is disconnected or removed. Non-limiting examples of RAM devices which contain such memory elements include dynamic random access memory (DRAM), synchronized dynamic random access memory (SDRAM) and static random access memory (SRAM). DRAM's and SDRAM's typically store data in capacitors which require periodic refreshing to maintain the stored data.

[0003] Recently, resistance variable memory elements have been investigated for suitability as semi-volatile and non-volatile random access memory elements. A class of such devices include an insula...

Claims

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