4445 results about "Static random-access memory" patented technology

A powerful, scaleable, and reconfigurable image processing system and method of processing data therein is described. This general purpose, reconfigurable engine with toroidal topology, distributed memory, and wide bandwidth I/O are capable of solving real applications at real-time speeds. The reconfigurable image processing system can be optimized to efficiently perform specialized computations, such as real-time video and audio processing. This reconfigurable image processing system provides high performance via high computational density, high memory bandwidth, and high I/O bandwidth. Generally, the reconfigurable image processing system and its control structure include a homogeneous array of 16 field programmable gate arrays (FPGA) and 16 static random access memories (SRAM) arranged in a partial torus configuration. The reconfigurable image processing system also includes a PCI bus interface chip, a clock control chip, and a datapath chip. It can be implemented in a single board. It receives data from its external environment, computes correspondence, and uses the results of the correspondence computations for various post-processing industrial applications. The reconfigurable image processing system determines correspondence by using non-parametric local transforms followed by correlation. These non-parametric local transforms include the census and rank transforms. Other embodiments involve a combination of correspondence, rectification, a left-right consistency check, and the application of an interest operator.

It is important to ensure good selectivity of a single magnetic tunnel junction storage cell within a memory array without affecting nearby storage cells. For this purpose, this memory array of storage cells preferably comprises a) an array of electrically conducting bit lines and electrically conducting word lines which form intersections therebetween, b) a storage cell disposed at each of said intersections, each storage cell comprising at least one reversible magnetic region or layer characterized by a magnetization state which can be reversed by applying thereto a selected external magnetic field, said reversible magnetic layer comprising a material whose magnetization state is more easily reversed upon a change in the temperature thereof, and c) a temperature change generator for changing the temperature of said reversible magnetic layer of only a selected one of said array of storage cells at any moment. To select a cell, it is preferable to select a cell by using a brief pulse of tunnelling current between the intersecting bit and word lines at that cell in order to provide sufficient Joule heating to facilitate a change in the magnetization state of its reversible magnetic layer, which preferably comprises a ferrimagnetic material.

Data may be stored in a non-volatile memory array in adaptive metablocks that are configured according to the locations of data boundaries in the data. Data may be stored in an intermediate format and later copied to adaptive metablocks configured for the data. Data in intermediate format may be stored in non-volatile random access memory or in a portion of the non-volatile memory array.

The present invention provides a device design and method for forming the same that results in Fin Field Effect Transistors having different gains without negatively impacting device density. The present invention forms relatively low gain FinFET transistors in a low carrier mobility plane and relatively high gain FinFET transistors in a high carrier mobility plane. Thus formed, the FinFETs formed in the high mobility plane have a relatively higher gain than the FinFETs formed in the low mobility plane. The embodiments are of particular application to the design and fabrication of a Static Random Access Memory (SRAM) cell. In this application, the bodies of the n-type FinFETs used as transfer devices are formed along the {110} plane. The bodies of the n-type FinFETs and p-type FinFETs used as the storage latch are formed along the {100}. Thus formed, the transfer devices will have a gain approximately half that of the n-type storage latch devices, facilitating proper SRAM operation

A microprocessor integrated circuit including a processing unit disposed upon an integrated circuit substrate is disclosed herein. The processing unit is designed to operate in accordance with a predefined sequence of program instructions stored within an instruction register. A memory, capable of storing information provided by the processing unit and occupying a larger area of the integrated circuit substrate than the processing unit, is also provided within the microprocessor integrated circuit. The memory may be implemented using, for example dynamic or static random-access memory. A variable output frequency system clock, such as generated by a ring oscillator, is also disposed on the integrated circuit substrate.

A circuit and method of operation for combining commands in a DRAM (dynamic random access memory) are revealed. The method applies to DRAMs having a plurality of memory banks or arrays. The method combines commands to rows on different memory banks, and the method also combines row and column commands on different memory banks. The method eliminates steps in a sequence of commands, and may significantly increase speed of input/output to a DRAM.

A memory device including a programmable resistive memory material is described along with methods for manufacturing the memory device. A memory device disclosed herein includes top and bottom electrodes and a multilayer stack disposed between the top and bottom electrodes. The multilayer stack includes a memory element comprising programmable resistive memory material and has a sidewall surface. An air gap is adjacent to the sidewall surface and self-aligned to the memory element.

An apparatus for and method of enhancing the performance of a multi-port internal cached DRAM (AMPIC DRAM) by providing an internal method of data validation within the AMPIC memories themselves to guarantee that only valid requested data is returned from them, or properly marked invalid data. A modified technique for identifying bad data that has been read out of AMPIC memory devices in the system.

A static random access memory (SRAM) device and a method for manufacturing the same are disclosed. In the SRAM device including a flip-flop circuit including two access transistors and a pair of inverters, connection lines for connecting the inputs and outputs of the inverters, and a word line, power supply lines and bit lines are formed of a metal interconnection. The resistance of interconnection can be reduced and the SRAM device manufacturing process can be performed along with CMOS standard logic manufacturing process.

A foundation layer increasing adhesive properties to a substrate, another foundation layer controlling orientation of an antiferromagnetic layer, the antiferromagnetic layer including a disordered alloy of IrMn, a pinning layer, and a cap protection layer are formed in the order on the substrate. The pinning layer includes two layers having an exchange coupling giving layer which exchange-couples to the antiferromagnetic layer and an exchange coupling enhancement layer which enhances the exchange coupling, the exchange coupling giving layer is made of a ferromagnetic material including Co or a Co100-XFeX alloy (O<=X<25) having face-centered cubic structure. The exchange coupling enhancement layer is made of Fe or a Co100-YFeY alloy (25<=Y<=100) having body-centered cubic structure.

This invention provides a method of making nano-scaled toroidal magnetic memory cells, such as may be used, for example, in magnetic random access memory (MRAM). In a particular embodiment a semiconductor wafer substrate is prepared and a conductor layer is provided upon the wafer. A hard layer is deposited upon the first conductor. From the hard layer, ion etching is employed to form an annular wall about a pillar, the wall and pillar defining an annular slot. A ferromagnetic data layer is deposited within the annular slot and a junction stack is then provided upon at least a portion of the data layer. A dielectric is applied to insulate the structure and then planarized to expose the pillar.

The present invention relates to a semiconductor device having first and second active device regions that are located in a semiconductor substrate and are isolated from each other by an isolation region therebetween, while the semiconductor device contains a first sub-lithographic interconnect structure having a width ranging from about 20 nm to about 40 nm for connecting the first active device region with the second active device region. The semiconductor device preferably contains at least one static random access memory (SRAM) cell located in the semiconductor substrate, and the first sub-lithographic interconnect structure directly cross-connects a pull-down transistor of the SRAM cell with a pull-up transistor thereof without any metal contact therebetween. The first sub-lithographic interconnect structure can be readily formed by lithographic patterning of a mask layer, followed by formation of sub-lithographic features using either self-assembling block copolymers or dielectric sidewall spacers.

A method for authenticating and deciphering an encrypted program file for execution by a secure element includes receiving the program file and a digital certificate that is associated with the program file from an external device. The method stores the program file and the associated certificate in a secure random access memory disposed in the secure element and hashes the program file to obtain a hash. The method authenticates the program file by comparing the obtained hash with a checksum that is stored in the certificate. Additionally, the method writes runtime configuration information stored in the certificate to corresponding configuration registers disposed in the secure element. The method further generates an encryption key using a seed value stored in the certificate and a unique identifier disposed in the secure element and deciphers the program file using the generated encryption key.

A complementary metal-oxide-semiconductor static random access memory cell that is formed by a pair of P-channel multiple-gate field-effect transistors (P-MGFETs), a pair of N-channel multiple-gate field-effect transistors (N-MGFETs), a second pair of N-MGFETs that has a drain respectively connected to a connection linking the respective drain of the N-MGFET of the first pair of N-MGFET to the drain of the P-MGFET of the pair of P-MGFETs; a pair of complementary bit lines, each respectively connected to the source of the N-MGFET of the second pair of N-MGFETS; and a word line connected to the gates of the N-MGFETs of the second pair of N-MGFETs.

A set top box for a television includes a hard drive, a random access memory, and a non-volatile memory. To maintain functionality of the device after a crash of the hard drive, the non-volatile memory includes an executable program for downloading a secondary operating system from a remote server or other secondary storage during a startup when the primary operating system in the hard drive is not accessible. The secondary operating system is stored in the random access memory and is a functional subset of the primary operating system to allow the use of the primary functionality of the set top box until the hard disk drive is repaired or replaced.

An SRAM cell includes six transistors. The storage nodes are implemented using local interconnects. A first level of metal overlies the interconnects but is electrically isolated therefrom. Contact plugs are formed to couple the cell to the first level of metal. The contact plugs are preferably formed in a different process step than the interconnects.

A memory cell (e.g., static random access memory (SRAM) cell) includes a plurality of back-gated n-type field effect transistors (nFETs), and a plurality of double-gated p-type field effect transistors (pFETs) operatively coupled to the plurality of nFETs.