23results about "Nanostructure application" patented technology

The invention relates to a method for the formation of skyrmions or Néel-type spin textures in a ferromagnetic material, preferably in a ferromagnetic alloy, comprising the steps of (i) providing an underlayer material, (ii) depositing a film of a ferromagnetic material thereon in a manner that (iii) the film obtained shows a vertical strain gradient (I), where ε t is the strain along the normal to the plane of the deposited film, and further to the materials so prepared and to their use in spintronics technology.

Provided are a magnetic tunneling junction device (100a) having more stable perpendicular magnetic anisotropy (PMA) and / or increased operating speed, and / or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer (103) having a first surface and a second surface opposite the first surface; a pinned layer (101) facing the first surface of the free layer; a first oxide layer (102) between the pinned layer and the free layer; and a second oxide layer (104) on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal. The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.

A process for producing nanoclusters of silicon and / or germanium exhibiting a permanent magnetic and / or electric dipole moment for adjusting the work function of materials, for micro- and nano-electronics, for telecommunications, for “nano-ovens”, for organic electronics, for photoelectric devices, for catalytic reactions and for fractionation of water.

Multi-period thin-film structures exhibiting giant magnetoresistance (GMR) are described. Techniques are also described by which narrow spacing and / or feature size may be achieved for such structures and other thin-film structures having an arbitrary number of periods.

Provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (PMA) and / or increased operating speed, and / or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal. The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.

The invention relates to a method for producing a soft or permanent magnet (3a) comprising the following steps: a) providing: - a solution containing a solvent in which a set of objects which possess a permanent magnetic moment are dispersed; - a substrate (1a) to which are attached, on the surface or within a cavity that it may have, a 1st pad (2a) and a 2nd pad (2a), said 1st pad (2a) includes a face facing and parallel to a face of the 2nd pad (2a); b) the solution is deposited on the surface of the substrate (1a) or, as the case may be, within its cavity; c) the substrate (1a) is placed in a magnetic field such that the set of objects collect together between the face of the 1st pad (2a) and said face of the 2nd pad (2a) so as to form a permanent magnet (3a).

A method for producing a printed magnetic functional element, in which a substrate is provided on one surface with at least one contact made of an electrically conductive material. Subsequently, a structure made of a material which has a magnetoresistive effect and is in the form of a paste, a gel, a dispersion or a suspension is printed on or onto the at least one contact and touches the contact directly, and the structure becomes electrically conductive and sensitive to magnetic fields by irradiation with electromagnetic radiation over a time period in the millisecond range.

The invention relates to a method for the formation of skyrmions or Néel-type spin textures in a ferromagnetic material, preferably in a ferromagnetic alloy, comprising the steps of (i) providing an underlayer material, (ii) depositing a film of a ferromagnetic material thereon in a manner that (iii) the film obtained shows a vertical strain gradient (∇tε = ∂εt / ∂t), where εt is the strain along the normal to the plane of the deposited film, and further to the materials so prepared and to their use in spintronics technology.

A MOD YIG epitaxial process for fabricating YIG nanofilms which, when deposited on GGG substrates, have single crystal epitaxial properties. The films may have thicknesses of 50 nm for a single layer, 100 nm for two layers, and 130 nm for three layers, and have a gyromagnetic ratio of 2.80 MHz per Oe, Gilbert damping ranges from 0.0003 to 0.001, 4πM$ values between 1650 G to 1780 G, coercivity from 1 Oe. to 5 Oe, and surface roughness of RMS 0.20 nm for up to 10 layers. Fabrication is economical and uses only a spinner, a drying station (RT to 150 C temperature control), and a quartz tube furnace that accommodates a flowing atmosphere of research grade oxygen, thereby eliminating the need for high vacuum deposition chambers.

The invention discloses a Bi-YIG thick film / permanent magnet nanowire array composite material, and belongs to the technical field of magnetic materials and microwave devices. A Bi-YIG thick film with the thickness of 20-50 microns grows on the surface of a substrate in a tape casting mode through a tape casting method, meanwhile, a permanent magnet nanowire array with the thickness of 20-100 microns grows on the surface of the Bi-YIG thick film through an electrochemical technology by means of an anodic aluminum oxide template, and magnetization of the Bi-YIG thick film is achieved by means of the high magnetic flux density characteristic of the permanent magnet nanowire array. And a similar composite material with a self-biasing function is formed. The composite material can solve the problem that a traditional circulator needs to be bonded with a permanent magnet, and a new thought is provided for preparing a self-biased circulator.

Provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (PMA) and / or increased operating speed, and / or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal. The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.

A magnetic memory device includes a spin-orbit torque (SOT) induction spin Hall electrode and a free layer of a magnetic tunnel junction (MTJ) stack disposed on the spin Hall electrode which is a synthetic anti-ferromagnetic structure. The free layer has a magnetic moment which is askew of the long axis of the MTJ stack and askew the direction of current flow through the spin Hall electrode. The MTJ stack internally generates a magnetic field to switch the state of the free layer.The free layer includes a first layer separated from a second layer by a spacer layer, where the first layer and the second layer may have the same or different crystalline structures.

The present disclosure concerns a magnetoresistive element (10) for a magnetic sensor, the magnetoresistive element (10) comprising a tunnel barrier layer (22) included between a reference layer (21) having a fixed reference magnetization (210) and a sense layer (23) having a free sense magnetization (230), wherein the sense magnetization (230) comprises a stable vortex configuration. The magnetoresistive element (10) further comprises a reference pinning layer (24) in contact with the reference layer (21) and pining the reference magnetization (210) by exchange-bias at a first blocking temperature (Tb1). The magnetoresistive element (10) further comprises a sense pinning layer (25) in contact with the sense layer (23) and pining the sense magnetization (230) by exchange-bias at a second blocking temperature (Tb2) lower that the first blocking temperature (Tb1). The present disclosure concerns a method for manufacturing the magnetoresistive element.

A method of forming a MTJ with a tunnel barrier having a high tunneling magnetoresistance ratio, and low resistance x area value is disclosed. The method preserves perpendicular magnetic anisotropy in bottom and top magnetic layers that adjoin bottom and top surfaces of the tunnel barrier. A key feature is a passive oxidation step of a first Mg layer that is deposited on the bottom magnetic layer wherein a maximum oxygen pressure is 10-5 torr. A bottom portion of the first Mg layer remains unoxidized thereby protecting the bottom magnetic layer from substantial oxidation during subsequent oxidation and anneal processes that are employed to complete the fabrication of the tunnel barrier and MTJ. An uppermost Mg layer may be formed as the top layer in the tunnel barrier stack before a top magnetic layer is deposited.

The present invention relates to a method for producing a printed magnetic functional element, in which a substrate (1) is provided on one surface with at least one contact (2) made of an electrically conductive material. Subsequently, a structure (3) made of a material which has a magnetoresistive effect and is in the form of a paste, a gel, a dispersion or a suspension is printed on or onto the at least one contact (2) and touches the contact directly, and the structure (3) becomes electrically conductive and sensitive to magnetic fields by irradiation with electromagnetic radiation over a time period in the millisecond range.

The present invention relates to a metallic hard magnetic material selected from an at least binary ferromagnetic or ferrimagnetic compound, with the metallic hard magnetic material including at least two different elements selected from the group consisting of 3d and 4f elements, where the metallic hard magnetic material is under an external magnetic field B of ≥0.1 T.

The invention provides a preparation method of ferromagnetic metal and a magnetoelectric transport device. The preparation method of the ferromagnetic metal comprises the steps that a low-energy cluster beam deposition method is adopted, nanoclusters formed by CoFe are deposited on a substrate to form a nano-particle film, and the nano-particle film does not contain doping elements. According to the method, a series of low-conductivity ferromagnetic pure metal nanoparticle films with different cluster sizes are successfully prepared by utilizing the disordered characteristic and the size adjustable characteristic of the nanocluster structure of a cluster assembly project, and the disadvantage that low-conductivity ferromagnetic pure metal cannot be obtained in the prior art is made up.

A method of forming a seed layer stack for a magnetic device may include depositing a bottom seed layer, forming at least one pair of smoothing layers over the bottom seed layer, and depositing a top seed layer over and abutting the at least one pair of smoothing layers. Forming at least one pair of smoothing layers may include sputter depositing a sub-smoothing layer over the bottom seed layer and sputter depositing an amorphous sub-smoothing layer over and abutting the sub-smoothing layer. A top surface of as-sputter deposited sub-smoothing layer has a first top surface roughness, and the sputter depositing of the amorphous sub-smoothing layer causes re-sputtering of the sub-smoothing layer, such that the top surface of the as-sputter deposited sub-smoothing layer has a second top surface roughness less than the first top surface roughness. The sub-smoothing layer, the bottom seed layer, and the top seed layer include different materials.