6results about "Nanostructure application" patented technology

A method for producing a printed magnetic functional element, in which a substrate is provided on one surface with at least one contact made of an electrically conductive material. Subsequently, a structure made of a material which has a magnetoresistive effect and is in the form of a paste, a gel, a dispersion or a suspension is printed on or onto the at least one contact and touches the contact directly, and the structure becomes electrically conductive and sensitive to magnetic fields by irradiation with electromagnetic radiation over a time period in the millisecond range.

A magnetic memory device includes a spin-orbit torque (SOT) induction spin Hall electrode and a free layer of a magnetic tunnel junction (MTJ) stack disposed on the spin Hall electrode which is a synthetic anti-ferromagnetic structure. The free layer has a magnetic moment which is askew of the long axis of the MTJ stack and askew the direction of current flow through the spin Hall electrode. The MTJ stack internally generates a magnetic field to switch the state of the free layer.The free layer includes a first layer separated from a second layer by a spacer layer, where the first layer and the second layer may have the same or different crystalline structures.

The present disclosure concerns a magnetoresistive element (10) for a magnetic sensor, the magnetoresistive element (10) comprising a tunnel barrier layer (22) included between a reference layer (21) having a fixed reference magnetization (210) and a sense layer (23) having a free sense magnetization (230), wherein the sense magnetization (230) comprises a stable vortex configuration. The magnetoresistive element (10) further comprises a reference pinning layer (24) in contact with the reference layer (21) and pining the reference magnetization (210) by exchange-bias at a first blocking temperature (Tb1). The magnetoresistive element (10) further comprises a sense pinning layer (25) in contact with the sense layer (23) and pining the sense magnetization (230) by exchange-bias at a second blocking temperature (Tb2) lower that the first blocking temperature (Tb1). The present disclosure concerns a method for manufacturing the magnetoresistive element.

The invention provides a preparation method of ferromagnetic metal and a magnetoelectric transport device. The preparation method of the ferromagnetic metal comprises the steps that a low-energy cluster beam deposition method is adopted, nanoclusters formed by CoFe are deposited on a substrate to form a nano-particle film, and the nano-particle film does not contain doping elements. According to the method, a series of low-conductivity ferromagnetic pure metal nanoparticle films with different cluster sizes are successfully prepared by utilizing the disordered characteristic and the size adjustable characteristic of the nanocluster structure of a cluster assembly project, and the disadvantage that low-conductivity ferromagnetic pure metal cannot be obtained in the prior art is made up.