35results about "Nanostructure application" patented technology

The invention discloses a composite shielding sheet for wireless charging and a manufacturing method thereof, and the manufacturing method of the composite shielding sheet for wireless charging comprises the following steps: crushing treatment: crushing a nanocrystalline strip to obtain nanocrystalline powder; flattening treatment is carried out, the nanocrystalline powder is subjected to ball milling, and the nanocrystalline powder is subjected to ball milling until the thickness of the nanocrystalline powder is 3-6 microns; performing sieving treatment to obtain nanocrystalline powder with the sheet diameter ranging from 75 microns to 150 microns; surface activating treatment; mixing treatment: adding a resin material into a matched organic solvent, heating and stirring until the resin is completely dissolved, then adding the activated nanocrystalline powder, stirring until the powder is uniformly dispersed to form a mixture, and distilling part of the solvent to improve the viscosity of the mixture to a coating state; and coating treatment. The composite shielding sheet for wireless charging, which is prepared by adopting the manufacturing method of the composite shielding sheet for wireless charging, has the characteristics of high magnetic conductivity and high saturation magnetic induction of nanocrystalline, and can be applied to a high-power and high-frequency wireless charging system.

In a method of manufacturing a semiconductor device, a magnetic random access memory (MRAM) cell structure is formed. The MRAM cell structure includes a bottom electrode, a magnetic tunnel junction (MTJ) stack and a top electrode. A first insulating cover layer is formed over the MRAM cell structure. A second insulating cover layer is formed over the first insulating cover layer. An interlayer dielectric (ILD) layer is formed. A contact opening in the ILD layer is formed, thereby exposing the second insulating cover layer. A part of the second insulating cover layer and a part of the first insulating cover layer are removed, thereby exposing the top electrode. A conductive layer is formed in the opening contacting the top electrode.

The invention relates to a method for the formation of skyrmions or Néel-type spin textures in a ferromagnetic material, preferably in a ferromagnetic alloy, comprising the steps of (i) providing an underlayer material, (ii) depositing a film of a ferromagnetic material thereon in a manner that (iii) the film obtained shows a vertical strain gradient (I), where ε t is the strain along the normal to the plane of the deposited film, and further to the materials so prepared and to their use in spintronics technology.

Provided are a magnetic tunneling junction device (100a) having more stable perpendicular magnetic anisotropy (PMA) and / or increased operating speed, and / or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer (103) having a first surface and a second surface opposite the first surface; a pinned layer (101) facing the first surface of the free layer; a first oxide layer (102) between the pinned layer and the free layer; and a second oxide layer (104) on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal. The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.

A method for magnetizing at least one region of a semiconductor device. The method includes: heating at least one antiferromagnetic layer of the at least one region to at least a threshold temperature of the antiferromagnetic layer using a first light beam and applying a first external magnetic field in a first direction of the magnetization to be produced in a ferromagnetic layer of the at least one region at least during a cooling of the antiferromagnetic layer of the at least one region which was previously heated at least to the threshold temperature. Before heating at least the antiferromagnetic layer of the at least one region to at least the threshold temperature of the antiferromagnetic layer, at least one absorption and / or antireflection layer is disposed on and / or in at least one first subvolume of the semiconductor device which includes the at least one region.

A process for producing nanoclusters of silicon and / or germanium exhibiting a permanent magnetic and / or electric dipole moment for adjusting the work function of materials, for micro- and nano-electronics, for telecommunications, for “nano-ovens”, for organic electronics, for photoelectric devices, for catalytic reactions and for fractionation of water.

Multi-period thin-film structures exhibiting giant magnetoresistance (GMR) are described. Techniques are also described by which narrow spacing and / or feature size may be achieved for such structures and other thin-film structures having an arbitrary number of periods.

Provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (PMA) and / or increased operating speed, and / or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal. The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.

The invention relates to a method for producing a soft or permanent magnet (3a) comprising the following steps: a) providing: - a solution containing a solvent in which a set of objects which possess a permanent magnetic moment are dispersed; - a substrate (1a) to which are attached, on the surface or within a cavity that it may have, a 1st pad (2a) and a 2nd pad (2a), said 1st pad (2a) includes a face facing and parallel to a face of the 2nd pad (2a); b) the solution is deposited on the surface of the substrate (1a) or, as the case may be, within its cavity; c) the substrate (1a) is placed in a magnetic field such that the set of objects collect together between the face of the 1st pad (2a) and said face of the 2nd pad (2a) so as to form a permanent magnet (3a).

A method for producing a printed magnetic functional element, in which a substrate is provided on one surface with at least one contact made of an electrically conductive material. Subsequently, a structure made of a material which has a magnetoresistive effect and is in the form of a paste, a gel, a dispersion or a suspension is printed on or onto the at least one contact and touches the contact directly, and the structure becomes electrically conductive and sensitive to magnetic fields by irradiation with electromagnetic radiation over a time period in the millisecond range.

The invention relates to a method for the formation of skyrmions or Néel-type spin textures in a ferromagnetic material, preferably in a ferromagnetic alloy, comprising the steps of (i) providing an underlayer material, (ii) depositing a film of a ferromagnetic material thereon in a manner that (iii) the film obtained shows a vertical strain gradient (∇tε = ∂εt / ∂t), where εt is the strain along the normal to the plane of the deposited film, and further to the materials so prepared and to their use in spintronics technology.

A MOD YIG epitaxial process for fabricating YIG nanofilms which, when deposited on GGG substrates, have single crystal epitaxial properties. The films may have thicknesses of 50 nm for a single layer, 100 nm for two layers, and 130 nm for three layers, and have a gyromagnetic ratio of 2.80 MHz per Oe, Gilbert damping ranges from 0.0003 to 0.001, 4πM$ values between 1650 G to 1780 G, coercivity from 1 Oe. to 5 Oe, and surface roughness of RMS 0.20 nm for up to 10 layers. Fabrication is economical and uses only a spinner, a drying station (RT to 150 C temperature control), and a quartz tube furnace that accommodates a flowing atmosphere of research grade oxygen, thereby eliminating the need for high vacuum deposition chambers.

The invention discloses a Bi-YIG thick film / permanent magnet nanowire array composite material, and belongs to the technical field of magnetic materials and microwave devices. A Bi-YIG thick film with the thickness of 20-50 microns grows on the surface of a substrate in a tape casting mode through a tape casting method, meanwhile, a permanent magnet nanowire array with the thickness of 20-100 microns grows on the surface of the Bi-YIG thick film through an electrochemical technology by means of an anodic aluminum oxide template, and magnetization of the Bi-YIG thick film is achieved by means of the high magnetic flux density characteristic of the permanent magnet nanowire array. And a similar composite material with a self-biasing function is formed. The composite material can solve the problem that a traditional circulator needs to be bonded with a permanent magnet, and a new thought is provided for preparing a self-biased circulator.

The present description relates to a process for fabricating a nanostructure comprising an isolated skyrmion in which a focused ion thinning technique is applied to a base material, generating a thinned structure in the shape of columns (20), followed by a technique for depositing thin metallic films on the columns (20) forming a nanostructure (10) capable of generating a single isolated skyrmion on the top thereof. The fabricated nanostructures (10) and use thereof in magnetic microscopy and magnetic sensing are also described.

A magnetic memory device includes a spin-orbit torque (SOT) induction spin Hall electrode and a free layer of a magnetic tunnel junction (MTJ) stack disposed on the spin Hall electrode which is a synthetic anti-ferromagnetic structure. The free layer has a magnetic moment which is askew of the long axis of the MTJ stack and askew the direction of current flow through the spin Hall electrode. The MTJ stack internally generates a magnetic field to switch the state of the free layer. The free layer includes a first layer separated from a second layer by a spacer layer, where the first layer and the second layer may have the same or different crystalline structures.

Provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (PMA) and / or increased operating speed, and / or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal. The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.

A magnetic memory device includes a spin-orbit torque (SOT) induction spin Hall electrode and a free layer of a magnetic tunnel junction (MTJ) stack disposed on the spin Hall electrode which is a synthetic anti-ferromagnetic structure. The free layer has a magnetic moment which is askew of the long axis of the MTJ stack and askew the direction of current flow through the spin Hall electrode. The MTJ stack internally generates a magnetic field to switch the state of the free layer.The free layer includes a first layer separated from a second layer by a spacer layer, where the first layer and the second layer may have the same or different crystalline structures.

A seed layer stack with a uniform top surface having a peak to peak roughness of 0.5 nm is formed by sputter depositing an amorphous layer on a smoothing layer such as Mg where the latter has a resputtering rate 2 to 30× that of the amorphous layer. The uppermost seed layer is NiW, NiMo, or one or more of NiCr, NiFeCr, and Hf while the bottommost seed layer is one or more of Ta, TaN, Zr, ZrN, Nb, NbN, Mo, MON, TIN, W, WN, and Ru. Accordingly, perpendicular magnetic anisotropy in an overlying magnetic layer is substantially maintained during high temperature processing up to 400° C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The amorphous seed layer is SiN, TaN, or CoFeM where M is B or another element with a content that makes CoFeM amorphous as deposited.

The present disclosure concerns a magnetoresistive element (10) for a magnetic sensor, the magnetoresistive element (10) comprising a tunnel barrier layer (22) included between a reference layer (21) having a fixed reference magnetization (210) and a sense layer (23) having a free sense magnetization (230), wherein the sense magnetization (230) comprises a stable vortex configuration. The magnetoresistive element (10) further comprises a reference pinning layer (24) in contact with the reference layer (21) and pining the reference magnetization (210) by exchange-bias at a first blocking temperature (Tb1). The magnetoresistive element (10) further comprises a sense pinning layer (25) in contact with the sense layer (23) and pining the sense magnetization (230) by exchange-bias at a second blocking temperature (Tb2) lower that the first blocking temperature (Tb1). The present disclosure concerns a method for manufacturing the magnetoresistive element.

In a method of manufacturing a semiconductor device, a magnetic random access memory (MRAM) cell structure is formed. The MRAM cell structure includes a bottom electrode, a magnetic tunnel junction (MTJ) stack and a top electrode. A first insulating cover layer is formed over the MRAM cell structure. A second insulating cover layer is formed over the first insulating cover layer. An interlayer dielectric (ILD) layer is formed. A contact opening in the ILD layer is formed, thereby exposing the second insulating cover layer. A part of the second insulating cover layer and a part of the first insulating cover layer are removed, thereby exposing the top electrode. A conductive layer is formed in the opening contacting the top electrode.

An improved magnetic tunnel junction with two oxide interfaces on each side of a ferromagnetic layer (FML) leads to higher PMA in the FML. The novel stack structure allows improved control during oxidation of the top oxide layer. This is achieved by the use of a FML with a multiplicity of ferromagnetic sub-layers deposited in alternating sequence with one or more non-magnetic layers. The use of non-magnetic layers each with a thickness of 0.5 to 10 Angstroms and with a high resputtering rate provides a smoother FML top surface, inhibits crystallization of the FML sub-layers, and reacts with oxygen to prevent detrimental oxidation of the adjoining ferromagnetic sub-layers. The FML can function as a free or reference layer in an MTJ. In an alternative embodiment, the non-magnetic material such as Mg, Al, Si, Ca, Sr, Ba, and B is embedded by co-deposition or doped in the FML layer.

A magnetic memory device includes a spin-orbit torque (SOT) induction spin Hall electrode and a free layer of a magnetic tunnel junction (MTJ) stack disposed on the spin Hall electrode which is a synthetic anti-ferromagnetic structure. The free layer has a magnetic moment which is askew of the long axis of the MTJ stack and askew the direction of current flow through the spin Hall electrode. The MTJ stack internally generates a magnetic field to switch the state of the free layer. The free layer includes a first layer separated from a second layer by a spacer layer, where the first layer and the second layer may have the same or different crystalline structures.

A method of forming a MTJ with a tunnel barrier having a high tunneling magnetoresistance ratio, and low resistance x area value is disclosed. The method preserves perpendicular magnetic anisotropy in bottom and top magnetic layers that adjoin bottom and top surfaces of the tunnel barrier. A key feature is a passive oxidation step of a first Mg layer that is deposited on the bottom magnetic layer wherein a maximum oxygen pressure is 10-5 torr. A bottom portion of the first Mg layer remains unoxidized thereby protecting the bottom magnetic layer from substantial oxidation during subsequent oxidation and anneal processes that are employed to complete the fabrication of the tunnel barrier and MTJ. An uppermost Mg layer may be formed as the top layer in the tunnel barrier stack before a top magnetic layer is deposited.

A magnetic memory element including first and second magnetic free layers having a variable magnetization direction substantially perpendicular to layer planes thereof; a first perpendicular enhancement layer (PEL) interposed between the first and second magnetic free layers; first and second magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof; a second PEL interposed between the first and second magnetic reference layers; an insulating tunnel junction layer formed between the first magnetic free layer and reference layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer and having a second invariable magnetization direction substantially opposite to the first invariable magnetization direction; and a cap layer formed adjacent to the second magnetic free layer and comprising iron, oxygen, and a metal element.

The present invention relates to a method for producing a printed magnetic functional element, in which a substrate (1) is provided on one surface with at least one contact (2) made of an electrically conductive material. Subsequently, a structure (3) made of a material which has a magnetoresistive effect and is in the form of a paste, a gel, a dispersion or a suspension is printed on or onto the at least one contact (2) and touches the contact directly, and the structure (3) becomes electrically conductive and sensitive to magnetic fields by irradiation with electromagnetic radiation over a time period in the millisecond range.

The present invention relates to a metallic hard magnetic material selected from an at least binary ferromagnetic or ferrimagnetic compound, with the metallic hard magnetic material including at least two different elements selected from the group consisting of 3d and 4f elements, where the metallic hard magnetic material is under an external magnetic field B of ≥0.1 T.