74 results about "Oxygen doping" patented technology

Methods of forming silicon oxide layers are described. The methods include the steps of concurrently combining both a radical precursor and a radical-oxygen precursor with a carbon-free silicon-containing precursor. One of the radical precursor and the silicon-containing precursor contain nitrogen. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain very little nitrogen. The radical-oxygen precursor and the radical precursor may be produced in separate plasmas or the same plasma. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.

A fabrication process for a tunneling magnetoresistance (TMR) sensor is disclosed. In particular, a unique method of forming a barrier layer of the TMR sensor is utilized so that the TMR sensor exhibits good magnetic and TMR properties. In one particular example, the barrier layer is formed by depositing a metallic film in an argon gas in a DC magnetron sputtering module, depositing an oxygen-doped metallic film in mixed xenon and oxygen gases in an ion-beam sputtering module, and oxidizing these films in an oxygen gas in an oxygen treatment module. This three-step barrier layer formation process minimizes oxygen penetration into ferromagnetic (FM) sense and pinned layers of the TMR sensor and optimally controls oxygen doping into the barrier layer. As a result, the FM sense and pinned layers exhibit controlled magnetic properties, the barrier layer provides a low junction resistance-area product, and the TMR sensor exhibits a high TMR coefficient.

In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

The invention provides a sulfide solid electrolyte based on oxygen doping. The sulfide solid electrolyte is prepared from the chemical ingredients, in percentage by mass: 36-60% of lithium sulfide orlithium selenide, 18-48% of phosphorus pentasulfide or phosphorus selenide, 1-23% of metal oxide or specific nonmetallic oxide and 8-37% of lithium chloride, lithium bromide or lithium iodide. The preparation method of the sulfide solid electrolyte mainly comprises the steps that the raw materials are sufficiently blended and subjected to tabletting, then placed in a quartz tube to be burned and sealed, the product is placed in a muffle furnace and heated to be 400-600 DEG C at a slow heating rate, the optimal heating rate is 0.3 DEG C / minute, heat preservation is conducted for 12-48 hours, and then the product is cooled to reach the room temperature; and the product is ground to be powder, and the sulfide solid electrolyte based on oxygen doping is prepared. The sulfide solid electrolyteis easy to prepare and high in repeatability, the prepared solid electrolyte has the high ionic conductivity and good stability to the air and positive and negative electrodes.

The invention discloses a preparation method of oxygen and chlorine co-doped graphene quantum dots, and relates to hydro-thermal preparation technology of the oxygen and chlorine co-doped graphene quantum dots. The hydro-thermal preparation technology of the oxygen and chlorine co-doped graphene quantum dots is characterized in that: under hydro-thermal conditions and hydrochloric acid catalysis conditions, a saccharide is used as a carbon source and an oxygen doping source, hydrochloric acid is used as a chlorine doping source, and water-soluble oxygen and chlorine co-doped graphene quantum dots are produced by water molecule-eliminating polymerization of saccharide molecules and the hydrochloric acid. The hydro-thermal preparation technology relates to simultaneous introduction of elements of oxygen and chlorine into the graphene quantum dots, so that electron transition effective energy levels in the graphene quantum dots can be increased, and furthermore the prepared oxygen and chlorine co-doped graphene quantum dots have more excellent luminescence and luminescence modulation performances.

Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrating via a non-C-plane surface to the growing gallium nitride crystal. Oxygen-doped {20-21}, {1-101}, {1-100}, {11-20} or {20-22} surface n-type gallium nitride crystals are obtained.

The invention discloses a preparation method of an oxygen-doped porous g-C3N4 photocatalyst. The method comprises dissolving melamine in deionized water, adding an organic substance containing an aldehyde group dropwise under heating and stirring conditions, putting the obtained solution into an oven, drying the solution at 80-150 DEG C to obtain a precursor, grinding the precursor, calcining theprecursor in an inert gas atmosphere to obtain an intermediate product, and calcining the intermediate product in an air atmosphere to obtain a target product. The porous oxygen-doped g-C3N4 nanometermaterial prepared by the method of the invention can effectively promote electron transfer, reduce the recombination rate and increase photocatalytic activity, and precursor treatment in this mannercan not only change the structure but also introduce useful foreign atoms. Moreover, the method is cheaper than conventional oxygen doping methods and is simple and convenient to operate. The photocatalyst can effectively degrade organic pollutants under visible light irradiation.

Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrating via a non-C-plane surface to the growing gallium nitride crystal. Otherwise, oxygen can be doped into a gallium nitride crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases including gallium, nitrogen and oxygen to the C-plane gallium nitride seed crystal or the three-rotationally symmetric foreign seed crystal, growing a faceted C-plane gallium nitride crystal having facets of non-C-planes on the seed crystal, maintaining the facets on the C-plane gallium nitride crystal and allowing oxygen to infiltrating via the non-C-plane facets to the gallium nitride crystal.

The various embodiments of the disclosure relate generally to carbon molecular sieve membranes (CMSM) and their associated fabrication processes, and more particularly to CMSM that maintain high gas selectivities without losing productivity. Methods for enriching a mixture of gases in one gas via the use of the CMS membranes, and gas enrichment devices using the same, are also disclosed.

The invention provides an atmosphere-pressure glow discharging detection method for metal ions and a detection system. The detection method includes the steps that by controlling oxygen doping, analyte is subjected to in-situ on-line capturing and enriched inside an APGD excitation source; after the analyte is pre-enriched for certain time, supplying of carrying gas, the gaseous analyte and oxygen is stopped, and the gas inlet end of the APGD excitation source is closed; after 1 s to 3 s, the gas inlet end of the APGD excitation source is opened again, supplying of the carrying gas and the gaseous analyte is recovered, disturbance is generated in the glow-discharge-plasma static environment inside the APGD excitation source, and the pre-enriched analyte is released. Disturbance is generated in the mode that an electromagnetic valve is controlled by a computer to be frequently turned on and off; software integrated control can be achieved in the enriching-releasing process, and the precision degree and the automation degree are high; as the complex and time-consuming pretreatment pre-enrichment process is replaced with the in-situ on-line pre-enrichment technology, the quantitative detection analysis efficiency of samples is greatly improved, and the detection limit is reduced by an order of magnitude.

Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for forming a dielectric film. In one embodiment, the method includes placing a plurality of substrates inside a processing chamber and performing a sequence of exposing the substrates to a first reactive gas comprising silicon, and then exposing the substrates to a plasma of a second reactive gas comprising nitrogen and at least one of oxygen or carbon, and repeating the sequence to form the dielectric film comprising silicon carbon nitride or silicon carbon oxynitride on each of the substrates.

The invention provides vacuum transfer apparatus for graphene and a vacuum transfer method for the graphene. The vacuum transfer apparatus for the graphene comprises a shell, a lifting mechanism, a supporting convex platform and a heating device; the interior of the shell is provided with a vacuum chamber, the lifting mechanism is arranged in the shell and includes a pressure plate arranged in thevacuum chamber in a lifting manner, and a graphene film is fixed to the bottom of the pressure plate; the supporting convex platform is arranged in the vacuum chamber and located below the pressure plate, and a target substrate is fixed on the supporting convex platform; and the heating device is arranged in the vacuum chamber and connected with the supporting convex platform, and the heating device is used to heat the target substrate through the supporting convex platform. According to the vacuum transfer apparatus for the graphene provided by the invention, the graphene film is pressed downwards to the target substrate through the lifting mechanism and heated through the heating device, the graphene film is transferred to the target substrate, so that integrity of graphene transfer isimproved, water-oxygen doping of the graphene is reduced, and the apparatus and method have important application value.

The invention discloses a preparation method of oxygen-doped porous carbon nitride nanosheets. The preparation method comprises the following steps: by taking a carbon-nitrogen precursor, ethanol andwater as raw materials, preparing a modified precursor from a common carbon-nitrogen precursor through ethanol assisted hydrothermal treatment, and performing high-temperature calcining on the modified precursor, so as to obtain the oxygen-doped porous carbon nitride nanosheets. Combination of morphology regulation and control and doping modification is achieved for the oxygen-doped porous carbonnitride nanosheets prepared by using the method disclosed by the invention. On one hand, the obtained carbon nitride has a remarkable two-dimensional layered porous structure, and not only is the capturing capability of the carbon nitride upon light improved, but also more charge migration channels and surface active sites can be provided; and on the other hand, regulation and control on a carbonnitride energy band structure is achieved through oxygen doping, and reaction electric potential of photo-reduction and photo-oxidation is optimized. Therefore, the prepared oxygen-doped porous carbonnitride nanosheets have excellent photocatalytic performance when being compared with conventional imporous easily-aggregated bulk-phase g-C3N4.

Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.

The present invention belongs to the semiconductor material field, and discloses the oxygen-doped Sb nanometer phase change thin-film materials. The chemical composition general formula is expressed by SbOx, wherein the Sb represents the Sb element, the O represents the nitrogen atom, the x represents different oxygen doping amount marks, and x=1,2,3 or 4. A magnetron sputtering method is employed for preparation, the substrate employs SiO2 / Si(100) substrate, the target of sputter is the Sb target, the sputtering gas is high-purity Ar gas and the high-purity O2 gas, and the total flow of the argon and the oxygen is maintained to 30 sccm in the sputtering process. The oxygen-doped Sb materials can solve the defects and deficiencies of the pure Sb materials. Different oxygen atoms are doped to allow the Sb crystallization temperature to be obviously improved, the data maintenance capacity is enhanced, and the stability is improved. The RESET power consumption is reduced while the crystalline state resistance is improved.

The invention discloses a preparation method and application of an oxygen-doped molybdenum disulfide material with defects. The method comprises the steps: dissolving ammonium molybdate tetrahydrate and thiourea in water to obtain a mixture; adding the mixture into a reaction kettle, and carrying out hydrothermal reaction for 12-24 h at the temperature of 200-250 DEG C to obtain a black precipitate; washing the black precipitate with deionized water, drying in vacuum, and finally calcining for 1.5-2.5 h under the air condition that the temperature is 300-350 DEG C; and obtaining the oxygen-doped molybdenum disulfide material with defects. The oxygen-doped molybdenum disulfide material with the defects is used as an adsorbent for adsorbing methylene blue, the defects and oxygen doping havea synergistic effect, and compared with single defects and oxygen-doped molybdenum disulfide, the oxygen-doped molybdenum disulfide material with the defects has the advantages that the adsorption capacity is greatly improved, and the adsorption rate is high.

The invention provides an oxygen-doped modification method of a two-dimensional material. The method comprises the following steps that (1) the two-dimensional material is put in a laser direct writing system, and a positioning system is used for finding a to-be-modified area; (2) the laser direct writing system is used for performing laser direct writing on the to-be-modified area in step (1) according to a set pattern to obtain the oxygen-doped modified two-dimensional material. The to-be-modified area of the two-dimensional material is accurately positioned by using the positioning system,and laser direct writing is carried out on the two-dimensional material according to the pattern, which can achieve the oxygen-doped modification on a selected area, but does not affect other areas, and the accuracy of the oxygen-doped modification method reaches 100 nanometers; by using a grey-scale map and according to different gray scales of the grey-scale map, lasers of different kinds of energy are used for laser direct writing separately to achieve that different doping positions have different oxygen doping amounts so that the oxygen doping amounts in one pattern can change continuously to achieve controllable gradient oxygen doping.

The invention relates to a nitrogen-oxygen co-doped activated carbon aerogel electrode material, a solid super-capacitor, and a preparation method for the nitrogen-oxygen co-doped activated carbon aerogel electrode material. The method comprises the steps: preparing polyaniline-sodium alginate hydrogel, preparing polyaniline-sodium alginate aerogel, mixing the prepared polyaniline-alginate aerogelwith a conductive agent and a binder, coating a current collector with the mixture, and performing drying to obtain a supercapacitor electrode piece. The solid super-capacitor provided by the invention comprises two electrode pieces and a gel polymer electrolyte between the two electrode pieces. The electrode pieces are the aerogel electrode materials prepared through the above methods. The marine nitrogen-oxygen co-doped activated carbon aerogel for the prepared solid super-capacitor is large in specific surface area, is reasonable in aperture distribution, is high in content of nitrogen-oxygen doping, is unique in ultramicropore structure, is good in wettability, and is small in equivalent series resistance. The super-capacitor electrode material is very high in specific capacitance, isvery high in energy density, power density and is excellent in coulombic efficiency.

The invention provides a method for preparing a lead selenide polycrystalline film on the basis of oxygen ion beam assisted deposition. In order to solve the problem of incapability of accurately controlling the oxygen doping amount and depth distribution in the PbSe film preparation process by physical vapor deposition-atmosphere annealing combination, oxygen ion assisted surface bombarding is performed by an ion beam assisted deposition technique in a static mixing mode after the film growth finishes, and the film is subjected to subsequent vacuum annealing to prepare the PbSe polycrystalline film with favorable and stable photosensitivity. The method can accurately control the oxygen ion injecting amount and depth distribution, and separates the oxygen doping from the polycrystallization process, thereby enhancing the degree of freedom of process optimization. The preliminary characterization of optical I-V characteristic, SEM (scanning electron microscope), XRD (X-ray diffraction) and the like on the prepared sample indicates that the PbSe polycrystalline prepared by the method has favorable photoelectric properties and surface characteristics.

The invention relates to a mono-like mesoporous titanium oxynitride nanowire consisting of nano-grains same in orientation and a preparation method of such mono-like mesoporous titanium oxynitride nanowire. The mono-like mesoporous titanium oxynitride nanowire is formed by overlapping of titanium oxynitride nano-grains 5-20 nm in diameter in the same orientation, the nanowire with a rich mesoporous structure inside is 3-7 micrometers in length and 80-100 nm in diameter, the mesoporous volume is 0.08-0.16 cm<3> / g and the specific area is up to 30-70 m<2> / g. Different degrees of oxygen doping is achieved through sintering temperature regulation, and the mono-like mesoporous titanium oxynitride nanowire consisting of the nano-grains same in orientation is higher in electrochemical activity. The mono-like mesoporous titanium oxynitride nanowire consisting of the nano-grains same in orientation is synthesized through a skillful hydrothermal-sintering technology combination method and is much higher in rate performance and much longer in cycle life, thereby being used as a potential negative electrode material of high-performance sodion hybrid capacitors.

The invention discloses a method for preparing a nitrogen-oxygen codoped biomass porous carbon material through two-step pre-carbonation. Crop particles are cleanly cleaned and dried, and are put intoa rigid sealed container for temperature rise and pressurization; after puffing, the crop particles are charged into a reaction kettle for low-temperature pre-carbonation, and are then transferred into a nitrogen gas protection tubular furnace for secondary pre-carbonation; a pre-carbonation product and potassium hydroxide are uniformly mixed; after high-temperature treatment in nitrogen gas, thenitrogen-oxygen codoped biomass porous carbon material is prepared. Through substep pre-carbonation, the biomass multilevel structure and contained heteroatoms are effectively reserved; the biomass carbon material has superhigh specific surface area and richly contains micropore and mesoporous structures and rich nitrogen-oxygen doping sites; when the biomass porous carbon material is applied tolithium-sulfur batteries, the ion and electron transmission rate can be effectively accelerated; the adsorption capacity on polysulfides is enhanced; the shuttle effect is inhibited; the battery performance is greatly improved.

The various embodiments of the disclosure relate generally to carbon molecular sieve membranes (CMSM) and their associated fabrication processes, and more particularly to CMSM that maintain high gas selectivities without losing productivity. Methods for enriching a mixture of gases in one gas via the use of the CMS membranes, and gas enrichment devices using the same, are also disclosed.

The invention discloses a preparation method of a phenolic resin-based oxygen-doped microporous carbon electrode material. The preparation method comprises the following steps: stirring 3-fluorophenoland hexamethylenetetramine at normal temperature; carrying out hydrothermal polymerization to prepare fluorophenolic resin, water-washing and drying the fluorophenolic resin, and performing carbonization, alkaline inorganic activation, acid-pickling, water-washing and drying treatment to obtain the material. Since the fluorine-containing functional groups are introduced into the synthesis processof the phenolic resin, the heat treatment temperature for preparing the phenolic resin-based oxygen-doped microporous carbon electrode material is effectively reduced, and a high oxygen doping rate is achieved; in the low-temperature heat treatment process, fluorine functional groups are easy to remove, so that adjacent benzene rings are covalently bonded to form a carbon material with a large conjugated structure, and meanwhile, the obtained phenolic resin-based carbon material is ensured to have certain conductivity and high oxygen doping rate, thereby showing high pseudocapacitance performance.

One object of one embodiment of the present invention is to provide a highly reliable semiconductor device including an oxide semiconductor, which has stable electrical characteristics. In a method for manufacturing a semiconductor device, a first insulating film is formed; source and drain electrodes and an oxide semiconductor film electrically connected to the source and drain electrodes are formed over the first insulating film; heat treatment is performed on the oxide semiconductor film so that a hydrogen atom in the oxide semiconductor film is removed; oxygen doping treatment is performed on the oxide semiconductor film, so that an oxygen atom is supplied into the oxide semiconductor film; a second insulating film is formed over the oxide semiconductor film; and a gate electrode is formed over the second insulating film so as to overlap with the oxide semiconductor film.

The invention relates to a novel method for increasing superconducting transition temperature Tc, in particular to a method for increasing the superconducting transition temperature Tc by using vertex angel oxygen in sequence. In the invention, a precursor method and a high temperature and high pressure method are used for synthesizing a high temperature superconductor of Sr2CuO3+Delta (Delta is more than zero and less than 1) with a single phase; the material refers to a p-typed high temperature superconductor with a single layer of CuO2 plane and a simple structure and the vertex angle oxygen partly occupied; the high temperature superconductor after synthesized under high temperature is treated thermally with the temperature of the thermal treatment of 50 DEG C to 500 DEG C and the time of the thermal treatment is 0.5 hour to 30 hours. The vertex angle is ordered, the Tc of Sr2CuO3+Delta after synthesized under high pressure increases from 30 to 75 K to 90 to 100 K after thermal treatment in low temperature. The method can be applicable to other systems and can be taken as a new path for developing a higher Tc superconducting material.

A semiconductor device using an oxide semiconductor, with stable electric characteristics and high reliability. In a process for manufacturing a bottom-gate transistor including an oxide semiconductor film, dehydration or dehydrogenation is performed by heat treatment and oxygen doping treatment is performed. The transistor including the oxide semiconductor film subjected to the dehydration or dehydrogenation by the heat treatment and the oxygen doping treatment is a transistor having high reliability in which the amount of change in threshold voltage of the transistor by the bias-temperature stress test (BT test) can be reduced.

One object of one embodiment of the present invention is to provide a highly reliable semiconductor device including an oxide semiconductor, which has stable electrical characteristics. In a method for manufacturing a semiconductor device, a first insulating film is formed; source and drain electrodes and an oxide semiconductor film electrically connected to the source and drain electrodes are formed over the first insulating film; heat treatment is performed on the oxide semiconductor film so that a hydrogen atom in the oxide semiconductor film is removed; oxygen doping treatment is performed on the oxide semiconductor film, so that an oxygen atom is supplied into the oxide semiconductor film; a second insulating film is formed over the oxide semiconductor film; and a gate electrode is formed over the second insulating film so as to overlap with the oxide semiconductor film.