The present invention belongs to the semiconductor material field, and discloses the oxygen-doped Sb nanometer phase change thin-film materials. The chemical composition general formula is expressed by SbOx, wherein the Sb represents the Sb element, the O represents the nitrogen atom, the x represents different oxygen doping amount marks, and x=1,2,3 or 4. A magnetron sputtering method is employed for preparation, the substrate employs SiO2/Si(100) substrate, the target of sputter is the Sb target, the sputtering gas is high-purity Ar gas and the high-purity O2 gas, and the total flow of the argon and the oxygen is maintained to 30 sccm in the sputtering process. The oxygen-doped Sb materials can solve the defects and deficiencies of the pure Sb materials. Different oxygen atoms are doped to allow the Sb crystallization temperature to be obviously improved, the data maintenance capacity is enhanced, and the stability is improved. The RESET power consumption is reduced while the crystalline state resistance is improved.