1338 results about "Photosensitivity" patented technology

The invention provides a photosensitive resin composition, a color filter and a manufacturing method thereof, and a liquid crystal display device. The photosensitive resin composition includes a colorant (A) including a triphenylmethane colorant (A-1), an alkali-soluble resin (B), a compound (C) having an ethylenically unsaturated group, a photoinitiator (D), and a solvent (E), in which in an electron spin resonance spectrogram of the photosensitive resin composition, a g value corresponding to a characteristic peak with the maximum intensity is 1.8000-2.0400.

The invention relates to a backside illuminated image sensor preparation method and a backside illuminated image sensor, and relates to the technical field of integrated circuits, and the method comprises the steps: providing a substrate, forming a third semiconductor layer covering a first semiconductor layer and a second semiconductor layer, the third semiconductor layer comprising an embedded part penetrating through the second semiconductor layer; forming a plurality of isolation parts penetrating through the third semiconductor layer, wherein the plurality of isolation parts are located right above the plurality of first semiconductor layers; forming a plurality of target semiconductor columns arranged at intervals along the first direction in the third semiconductor layer; target doping ions are injected into the remaining third semiconductor layer, so that the target semiconductor columns, the second semiconductor layer and the third semiconductor layer jointly form a plurality of photodiodes. The electron concentration of the photosensitive area is at least increased, and the photosensitive performance of the BSI image sensor is improved.

The invention provides anthracene methyl phenothiazine for a photosensitive resin composition, and relates to the field of photopolymerization. The invention further comprises a photosensitive resin composition containing the anthracene methyl phenothiazine, a photosensitive dry film containing the anthracene methyl phenothiazine and application of the photosensitive resin composition and the photosensitive dry film. The anthracene methyl phenothiazine disclosed by the invention has photosensitivity, can be used as a photosensitizer in the photosensitive resin composition, can improve the adhesive force of the photosensitive resin composition on various metal surfaces, and has the characteristic of low migration; the method can be widely applied to the photo-curing fields of dry films, paints, coatings, printing ink, forming materials and the like.

The invention provides triazole anthracene methyl formate for a photosensitive resin composition, and relates to the field of photopolymerization. The invention also comprises a photosensitive resin composition containing the triazole anthracene methyl formate, a photosensitive dry film containing the triazole anthracene methyl formate, and applications of the photosensitive resin composition and the photosensitive dry film. The triazole formic acid anthracene methyl ester disclosed by the invention has photosensitivity, can be used as a photosensitizer in the photosensitive resin composition, can improve the adhesive force of the photosensitive resin composition on various metal surfaces, and has the characteristic of low migration; the method can be widely applied to the photo-curing fields of dry films, paints, coatings, printing ink, forming materials and the like.

The invention provides anthracene methylthiosalicylic acid for a photosensitive resin composition, and relates to the field of photopolymerization. The invention also comprises a photosensitive resin composition containing the anthracene methylthio-salicylic acid, a photosensitive dry film containing the anthracene methylthio-salicylic acid, and applications of the photosensitive resin composition and the photosensitive dry film. The anthracene methyl thiosalicylic acid has photosensitivity and can be used as a photosensitizer in the photosensitive resin composition; the migration characteristic is low; the photosensitive resin composition has good solubility in conventional monomers, and the degree of freedom of formula design of the photosensitive resin composition is greatly improved; the developing agent also has very good solubility in alkali liquor, so that developing garbage can be greatly reduced, and the product yield is improved; the adhesive force of the photosensitive resin composition on various metal surfaces can be improved; the method can be widely applied to the photo-curing fields of dry films, paints, coatings, printing ink, forming materials and the like.

To provide a polyhydroxyamide compound with which it is possible to obtain a new negative photosensitive resin composition that does not include a resin component which may be targeted by PFAS regulations.SOLUTION: Provided is a polyhydroxyamide compound including: a structural unit represented by formula (1); and a structural unit wherein a fluorene group in the structure of (1) is replaced with a sulfonyl group.SELECTED DRAWING: None

A photosensitive surface treating agent containing a compound represented by the following Formula (M1). In Formula (M1), R1 is a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms, Y1 is a linear or branched alkylene group having 1 to 4 carbon atoms or a single bond, and the terminal carbon atom of the alkyl group for R1 may be bonded to a carbon atom constituting the alkylene group for Y1, and R1 and Y1 may form a ring. R2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, R3 and R4 are each independently an alkyl group having 1 to 3 carbon atoms, n0 is an integer of 0 or more, and X is a halogen atom or an alkoxy group.

The invention relates to the field of polyimide materials, in particular to a positive photosensitive polyimide photoresist, a polyimide film and application of the positive photosensitive polyimide photoresist and the polyimide film. The positive photosensitive polyimide photoresist with excellent performance can be prepared by taking novel water-soluble polyamic acid ester with good dielectric property, low water absorption, heat resistance and the like as film-forming resin and combining the film-forming resin with the quinonediazide compound photosensitive component, the silane coupling agent and the organic solvent; the main film-forming component polyamic acid ester is a corresponding water-soluble polyimide precursor synthesized by using a series of simple and easily available polymeric monomers, and the realization of the water solubility is not limited to specific groups such as hydroxyl, carboxyl and the like in molecules. The photoresist has the advantages of high light sensitivity, high resolution, good thermal stability and chemical resistance, good heat and humidity resistance, good adhesion to various substrates and the like, an alkaline aqueous solution can be used as a developing solution, the loss of a film in a non-exposure area in the developing process is low due to low water absorption of the alkaline aqueous solution, and the developing time is short.

The invention relates to the technical field of biomedicine, discloses mutant photo-induced ion channel ChR-2 protein, and further discloses a nucleic acid construct, an expression vector, a cell, related application and a computer model. The light-sensitive channel ChR2 protein mutant obtained by the invention has stronger light current, and the light-sensitive capability of the light-sensitive channel ChR2 protein mutant is at least improved by 100 times; besides, the invention also obtains a nucleotide sequence for coding the light-sensitive channel ChR2 protein mutant, constructs a recombinant expression vector, and obtains the light-sensitive channel ChR2 protein with higher expression quantity and stronger light sensitivity, and the light-sensitive channel ChR2 protein is very suitable for expression in cells of mammals (especially human); according to the invention, the rhodopsin in different channels is systematically studied by modifying the position G224 in the helix 6 of seven transmembrane helix motifs, which proves that the mutation of the position G224 in the helix 6 in WT ChR2 accelerates the photosensitivity of the channels, and the considered position is homologous in the helix 6 of the rhodopsin in different channels.

The invention relates to a back-illuminated image sensor and a preparation method thereof, and relates to the technical field of integrated circuits, in which a plurality of photodiode structures are distributed at intervals along a first direction parallel to a back surface and penetrate through a P-type epitaxial layer along a second direction close to a substrate; the bottom photosensitive part comprises a first horizontal part extending along a first direction and a first longitudinal protruding part extending to the back surface of the substrate; the middle photosensitive part comprises a second horizontal part extending in the first direction and a second longitudinal protruding part extending to the top face of the first horizontal part. The second longitudinal protruding part is located on the side, away from the first longitudinal protruding part, of the first horizontal part in the first direction. The top photosensitive part comprises a third horizontal part extending in the first direction and a third longitudinal protruding part extending to the top face of the second horizontal part. The electron concentration of a photosensitive area can be increased at least, and the photosensitive performance and the integration density of the BSI image sensor are improved.

The main object of the present invention is to provide an organic EL display that has excellent light emission characteristics to enable low voltage driving and has light emitting elements with high reliability, thereby serving to realize a desired current density. Provided is a display device including a substrate, a first electrode, a second electrode, a pixel separation layer, and an organic layer containing a light emitting layer, wherein the pixel separation layer contains a colorant (D-DL), has an optical density of 0.5 to 3.0 in the visible light wavelength range per μm of the thickness of the pixel separation layer, and has a plurality of pixel parts in a plan view. The detection intensity of the sulfur ion (S−), the detection intensity of the chlorine ion (Cl−), the detection intensity of the bromine ion (Br−), and the sum of the detection intensity of the chlorine ion (Cl−) and the detection intensity of the bromine ion (Br−), all measured by time-of-flight secondary ion mass spectrometry at a position 3 nm deep in each pixel part from the surface of the first electrode, the surface being in contact with the organic layer containing a light emitting layer, satisfy relationships represented by specific general formulas.

The invention relates to a backside illuminated image sensor preparation method and a backside illuminated image sensor, and relates to the technical field of integrated circuits, and the method comprises the steps: providing a substrate which comprises a plurality of trench isolation parts distributed at intervals in a first direction; self-aligning the plurality of trench isolation parts to form a first type bottom semiconductor layer comprising a plurality of first target patterns which are distributed at intervals along the first direction, the first target patterns comprising a first type second semiconductor part, a first semiconductor part and a second semiconductor part which are sequentially distributed along the first direction; forming a second type photosensitive lamination layer on the surface, deviating from the substrate, of the bottom semiconductor layer; self-aligning the first semiconductor part, and forming a plurality of first type semiconductor columns which penetrate through the photosensitive lamination layer along a second direction and extend to the first semiconductor part; and forming a first type top semiconductor layer by adopting the same preparation process as the bottom semiconductor layer. The electron concentration of a photosensitive area can be increased at least, and the photosensitive performance of the BSI image sensor is improved.

A method and device for implementing high-dynamic range imaging, and an image processing system are provided. The device includes: an image sensor, a pixel array in the image sensor including a plurality of pixel units; and a column processing unit, including a gain control unit and an analog-to-digital conversion unit; where each pixel unit includes two photoelectric conversion units with different photosensitivity; and the gain control unit is configured to determine a brightness range of an image based on a signal voltage output by each pixel unit, and select the photoelectric conversion unit for signal conversion in each pixel unit, a charge-to-voltage conversion gain of each pixel unit and a voltage gain of the column processing unit based on the brightness range. With the method, device and system, the signal voltage allows to be read out only once, thereby shortening row readout time and increasing a frame rate.

The invention provides a wafer film tearing process based on ultraviolet viscosity control. The wafer film tearing process based on ultraviolet viscosity control comprises the steps that a, a wafer is selected and prepared, the surface of the wafer is coated with a layer of photosensitive viscous material suitable for ultraviolet irradiation, and the photosensitive material is a thin film layer with high photosensitivity and good photoreaction control capacity; and the ultraviolet light source is accurately adjusted to ensure that the intensity of the ultraviolet light is uniformly distributed in a relatively large range. According to the wafer film tearing process based on ultraviolet viscosity control, by optimizing ultraviolet irradiation conditions, the problem of limited ultraviolet penetrating power is solved, it is ensured that ultraviolet can effectively penetrate through a thick film layer, and uniform photosensitive material reaction is achieved. By means of the improvement, it can be ensured that the film layer separation effect in the film tearing process is more uniform, the film tearing effect difference caused by uneven ultraviolet light penetration in a traditional method is avoided, and the consistency and reliability of the technology are improved.

The invention relates to a backside illuminated image sensor preparation method and a backside illuminated image sensor, and relates to the technical field of integrated circuits, and the method comprises the steps: providing a substrate comprising a first top surface; forming a first semiconductor layer on the first top surface of the substrate, wherein the first semiconductor layer internally comprises a plurality of first photosensitive parts which are distributed at intervals in the first direction, and the top surfaces of the first photosensitive parts are not lower than the top surface of the first semiconductor layer; forming a second semiconductor layer covering the first semiconductor layer, wherein the second semiconductor layer internally comprises a plurality of second photosensitive parts which are distributed at intervals along the first direction, penetrate through the second semiconductor layer along a second direction close to the substrate and extend to the top surfaces of the plurality of first photosensitive parts; and forming a third semiconductor layer covering the second semiconductor layer, wherein the third semiconductor layer internally comprises a plurality of third photosensitive parts which are distributed at intervals along the first direction, penetrate through the second semiconductor layer along the second direction and extend into the plurality of second photosensitive parts. The electron concentration of a photosensitive area can be increased at least, and the photosensitive performance of the BSI image sensor is improved.

The embodiment of the invention provides a display panel and a display device. The display panel comprises a pixel driving circuit, the pixel driving circuit comprises a silicon semiconductor transistor, an oxide transistor and a storage capacitor which are electrically connected, and the display panel comprises a first active layer, a first gate layer and a second active layer which are sequentially arranged in a stacked mode. A grid electrode of the oxide transistor, a grid electrode of the silicon semiconductor transistor and a first pole plate of the storage capacitor are located on a first grid electrode layer, an active pattern of the oxide transistor and a second pole plate of the storage capacitor are located on a second active layer, and the first grid electrode layer can be adopted to form a bottom grid of the oxide transistor. The active pattern of the transistor in the second active layer is prevented from being influenced by light, so that the photosensitivity and the electrical property of the transistor are improved, the performance of the display panel is improved, and the electrical property improvement effect of the oxide transistor is good due to the fact that the distance between the first gate layer and the second active layer is small.

The invention provides a compound containing a ureido structure, a negative photosensitive resin composition and a preparation method and application of the negative photosensitive resin composition. The compound containing the ureido structure can be used as a photo-crosslinking agent; when being added into the photosensitive resin composition, the compound can improve the resolution ratio and mechanical property of a photosensitive resin composition cured film and the adhesiveness with a base material, and can effectively inhibit the oxidation discoloration of a copper base material.

An array substrate and a display panel are provided. The array substrate includes a substrate, an active layer, a first insulating layer, and a first opening. The active layer is disposed on a side of the substrate and includes a first active portion and a second active portion. The first insulating layer is disposed on a side of the active layer away from the substrate and covers the active layer. The first opening is formed on the first active portion. The first opening exposes the first insulating layer. An integration of a pixel driving element and a photosensitive element on the array substrate is realized, and a photosensitive performance of the photosensitive element is improved.

The present invention provides an organic electric element including a metal patterning layer formed on the outside of a metal electrode and an electronic device thereof, and by forming a patterning auxiliary photosensitive layer made of a material with excellent photosensitivity under the metal patterning layer, it is possible to easily measure the thickness of the metal patterning layer.

The invention provides a sleep adjusting method and device, electronic equipment and a storage medium, the method comprises: acquiring physiological perception data, scheduling information and illumination information of a user, the scheduling information comprising night shift arrangement information and rest day arrangement information, and the illumination information comprising individual photosensitive difference information and illumination exposure history; determining initial peak time of melatonin secretion according to a preset melatonin secretion rule and night shift arrangement information; phase change information is determined based on a preset melatonin secretion rule, the individual photosensitive difference information and the illumination exposure history, and predicted peak time is determined according to the phase change information and the initial peak time; determining a wake-up strategy according to the physiological perception data, the rest day arrangement information and the predicted peak time, wherein the wake-up strategy comprises actual wake-up time and target control start time of at least one preset wake-up cooperation function; the sleep effect can be naturally and mildly optimized, and the sleepiness feeling after waking up is reduced.

To provide a new photosensitive resin composition having superior adhesion to a Si wafer.SOLUTION: A photosensitive resin composition in one form of the present disclosure comprises a polyhydroxyurea compound having a structural unit represented by formula (1), a photoacid generator, and a crosslinking agent.SELECTED DRAWING: None

The invention discloses a preparation method and application of a PDMS photoresist based on femtosecond laser two-photon polymerization. The feasibility of a photoresist formula is verified through micro-nano structure processing. The preparation method of the photoresist comprises the following steps: dissolving isopropyl-9H-thioxanthone and 2-isopropyl thioxanthone in tetrahydrofuran, so as to form a photoinitiator solution; then mixing the PDMS precursor with a photoinitiator solution, stirring for 12 hours in a dark place to ensure the uniformity, and removing bubbles through THF evaporation and ultrasonic treatment to finally obtain the high-quality PDMS photoresist. According to the method, by accurately controlling the ratio of the photoinitiator to the PDMS, the photosensitivity and the processability of the photoresist are remarkably improved. And in combination with a femtosecond laser two-photon polymerization technology, micro-nano processing of a high-resolution (submicron-level) three-dimensional complex structure is realized, and the method is suitable for the fields of micro-fluidic chips, biomedical devices, optical devices and the like.

The invention provides a photosensitive resin composition, a photosensitive dry film and application thereof. The photosensitive resin composition comprises alkali-soluble resin, a photopolymerization monomer, a photoinitiator and a photosensitizer, the photosensitive resin composition provided by the invention has excellent photosensitive characteristics, can provide excellent resolution and adhesive force, and is uniformly cured during exposure, a formed anti-corrosion pattern port is rectangular, the side wall is flat, an electroplating solution is not easily polluted in an electroplating process, the yield of a product can be remarkably improved, and the service life of the electroplating solution is prolonged.

The present invention relates to a photosensitive resin composition, a solder resist ink, a dry film and a cured product, the photosensitive resin composition contains an epoxy acrylic resin having a specific structure, and the epoxy acrylic resin having the specific structure is formed by adding an alpha, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, beta, and then adding dibasic acid anhydride to the beta-unsaturated monobasic acid a1 and the monobasic acid a2 with a specific structure. According to the invention, a certain proportion of monobasic acid a2 with a special structure is introduced into epoxy acrylate, so that the dispersibility of the photosensitive resin composition to pigments and fillers can be effectively improved; and the water absorption of the cured product is reduced, so that the lead-free tin spraying resistance and the wave soldering resistance are improved.

To provide a photosensitive composition capable of further improving diffraction characteristics.The present technology provides a photosensitive composition including: at least a compound represented by the following general formula (1); a binder resin; and a photoinitiator.In the general formula (1), X1 represents an oxygen atom, a nitrogen atom, a phosphorus atom, a caron atom, or a silicon atom.Y1 and Y2 each represent a benzene ring or a naphthalene ring, and both Y1 and Y2 do not represent benzene rings.R1 to R3 each represent a hydrogen or a substituent group represented by *—Z1(R4)d (* represents a bonding site).Z1 represents a single bond, a saturated hydrocarbon group having a valence of 2 or higher, or an unsaturated hydrocarbon group having a valence of 2 or higher, and the saturated hydrocarbon group or the unsaturated hydrocarbon group may have an ether bond and / or a thioether bond.R4 represents a hydrogen or a polymerizable substituent group.

The present invention relates to a photosensitive resin composition and a dry film resist laminate thereof, belonging to the technical field of printed circuit boards. A photosensitive resin composition includes an alkali-soluble resin, a photopolymerizable monomer, and a photoinitiator. The alkali-soluble resin at least includes a segment formed by a vinyl carbonate I monomer, and the vinyl carbonate I is a vinyl carbonate with a benzene ring. The present invention uses vinyl carbonate I containing a benzene ring structure to prepare the photosensitive resin composition. In addition to having excellent resolution and adhesion, since the segment formed by the vinyl carbonate I monomer will decompose to form a structure with hydroxyl groups and CO2, it can interact with the stripping solution during the stripping process, which is beneficial to the peeling of the cured resist pattern. At the same time, the released gas will accelerate the stripping process, making it have a faster stripping speed, thereby improving the production efficiency.

The invention provides a photosensitive colored resin composition, a color filter and a manufacturing method thereof, and a liquid crystal display device. The pixel layer manufactured by using the photosensitive colored resin composition has good high-fineness pattern linearity. The photosensitive colored resin composition comprises a colorant (A), an alkali-soluble resin (B), a photopolymerizable compound (C), a photoinitiator (D) and a solvent (E), and in an electron spin resonance spectrogram of the photosensitive colored resin composition, the g value corresponding to a characteristic peak with the maximum intensity is 1.990-2.020.

To provide a photosensitive resin composition in which a fine pattern can be formed and a cured film has high chemical resistance or copper migration resistance even when cured at a low temperature below 150°C, and a pattern forming process thereof.SOLUTION: A photosensitive resin composition includes: (A) a silicone resin that has a silphenylene structure, a polysiloxane structure, and a fluorene structure at a main chain and has an acryloyl group or a methacryloyl group at a side chain; and (B) a photoradical generator.SELECTED DRAWING: None

The systems and methods described herein provide for an automated photosensitivity detection system (PDS) configured to automatically execute processes for flash detection and pattern detection of a video. PDS outputs an analysis result for each type of pattern detection analysis for the video. The PDS can execute each type of pattern detection analysis independently of the other pattern detection processes. Each pattern detection process is a distinct process that can be calculated without reference to the other processes. The final analysis result can aggregate the results of each detection process executed by the PDS.

The present invention relates to a method for crystallization of a metal oxide thin film by using thermal dissipation annealing (TDA) and exhibits an effect enabling high-temperature thermal annealing, which is essential for the performance improvement of a semiconductor material, a sensor material, and the like deposited on a thin-plate substrate, even without degrading the performance of the thin-plate substrate. In addition, a metal oxide thin film prepared by the method of the present invention is in the form of a two-dimensional nanosheet, and thus may have a low defect density (high crystallinity) and a wide surface area. Accordingly, based on the improved photosensitivity and photoreactivity, the metal oxide thin film may be utilized in a high-performance photoelectric device.