The invention relates to a backside illuminated
image sensor preparation method and a backside illuminated
image sensor, and relates to the technical field of integrated circuits, and the method comprises the steps: providing a substrate, forming a first
semiconductor layer on the back surface of the substrate, and enabling the first
semiconductor layer to internally comprise a plurality of bottom photosensitive laminated
layers which are arranged at intervals, the bottom photosensitive laminated layer comprises a first sub-photosensitive layer, a second sub-photosensitive layer and a third sub-photosensitive layer which are sequentially laminated in the direction away from the substrate; forming a second
semiconductor layer covering the plurality of bottom photosensitive laminated
layers, the second semiconductor layer including a plurality of bridging portions arranged at intervals, the plurality of bridging portions penetrating the second semiconductor layer and the third sub-photosensitive
layers and extending into the plurality of second sub-photosensitive layers; and forming a third semiconductor layer covering the plurality of bridging parts, the third semiconductor layer comprising a plurality of photosensitive cover layers arranged at intervals, and the plurality of photosensitive cover layers being embedded in the third semiconductor layer and covering and contacting the plurality of bridging parts. The
electron concentration of a photosensitive area can be increased at least, and the photosensitive performance of the BSI
image sensor is improved.