1909 results about "Photosensitivity" patented technology

The invention relates to a backside illuminated image sensor preparation method and a backside illuminated image sensor, and relates to the technical field of integrated circuits, the backside illuminated image sensor preparation method comprises the following steps: providing a substrate comprising a first top surface, the first top surface comprising an isolation layer and an initial semiconductor layer stacked in sequence along a first direction deviating from the first top surface; forming a plurality of isolation lamination layers which are arranged at intervals along a second direction on the top surface of the initial semiconductor layer, and sequentially forming a first semiconductor layer and a second semiconductor layer which are laminated and contain different pentavalent elements between adjacent isolation lamination layers; diffusing a first pentavalent element of the first semiconductor layer to the initial semiconductor layer to obtain a first target semiconductor layer; diffusing a second pentavalent element of the second semiconductor layer to the first semiconductor layer to obtain a second target semiconductor layer; and a dielectric layer covering the top surface of the second semiconductor layer and the exposed outer surface of the isolation lamination layer is formed, so that the electron concentration of the photosensitive area is increased, and the photosensitive performance of the BSI image sensor is improved.

The invention provides a photosensitive resin composition, a color filter and a manufacturing method thereof, and a liquid crystal display device. The photosensitive resin composition includes a colorant (A) including a triphenylmethane colorant (A-1), an alkali-soluble resin (B), a compound (C) having an ethylenically unsaturated group, a photoinitiator (D), and a solvent (E), in which in an electron spin resonance spectrogram of the photosensitive resin composition, a g value corresponding to a characteristic peak with the maximum intensity is 1.8000-2.0400.

The invention relates to a backside illuminated image sensor preparation method and a backside illuminated image sensor, and relates to the technical field of integrated circuits, and the method comprises the steps: providing a substrate, forming a third semiconductor layer covering a first semiconductor layer and a second semiconductor layer, the third semiconductor layer comprising an embedded part penetrating through the second semiconductor layer; forming a plurality of isolation parts penetrating through the third semiconductor layer, wherein the plurality of isolation parts are located right above the plurality of first semiconductor layers; forming a plurality of target semiconductor columns arranged at intervals along the first direction in the third semiconductor layer; target doping ions are injected into the remaining third semiconductor layer, so that the target semiconductor columns, the second semiconductor layer and the third semiconductor layer jointly form a plurality of photodiodes. The electron concentration of the photosensitive area is at least increased, and the photosensitive performance of the BSI image sensor is improved.

The invention provides anthracene methyl phenothiazine for a photosensitive resin composition, and relates to the field of photopolymerization. The invention further comprises a photosensitive resin composition containing the anthracene methyl phenothiazine, a photosensitive dry film containing the anthracene methyl phenothiazine and application of the photosensitive resin composition and the photosensitive dry film. The anthracene methyl phenothiazine disclosed by the invention has photosensitivity, can be used as a photosensitizer in the photosensitive resin composition, can improve the adhesive force of the photosensitive resin composition on various metal surfaces, and has the characteristic of low migration; the method can be widely applied to the photo-curing fields of dry films, paints, coatings, printing ink, forming materials and the like.

The invention relates to a photoinitiator, a photopolymerization composition and application thereof, and relates to the technical field of photoinitiators, the photoinitiator is a compound with a structure as shown in a formula (1): # imgabs 0 #: 1-2 structures in R1-R8 in the formula (1) are selected from groups as shown in a formula (2) or a formula (3): # imgabs 1 #. The compound provided by the invention still has relatively strong absorption capacity in a dark color system, has high OD (optical density), and can be used for preparing a photoinitiator. The photoinitiator has excellent I-line photosensitivity, and is more matched with the emission spectrum of an ultraviolet light source, so that the photoinitiator is high in photosensitivity, good in solubility, lower in cost and excellent in comprehensive performance, and has excellent application prospects in display, semiconductors and printing ink.

The invention provides a photosensitive resin composition, a photosensitive dry film and application thereof. The photosensitive resin composition comprises alkali-soluble resin, a photopolymerization monomer, a photoinitiator and a modified anthracene sensitizer. By introducing the modified anthracene sensitizer into a resin system, on one hand, the photosensitivity of the obtained photosensitive resin composition can be greatly improved; on the other hand, compared with the related technology, the obtained photosensitive resin composition has the advantages that the performance in the aspects of resolution, adhesive force performance, flexibility grade, initiator migration, development precipitation and the like is improved, so that the photosensitive resin composition is suitable for manufacturing high-order PCBs (Printed Circuit Boards) such as support plates and similar support plates, and can meet the performance requirements of special use scenes such as long copper columns and mSAP thick copper plating; the production yield can be remarkably improved, the production efficiency of manufacturing parts such as ITO in the fields of PCB manufacturing, lead frame manufacturing, semiconductor packaging and flat panel displays is remarkably improved, and the production cost is reduced.

The invention provides triazole anthracene methyl formate for a photosensitive resin composition, and relates to the field of photopolymerization. The invention also comprises a photosensitive resin composition containing the triazole anthracene methyl formate, a photosensitive dry film containing the triazole anthracene methyl formate, and applications of the photosensitive resin composition and the photosensitive dry film. The triazole formic acid anthracene methyl ester disclosed by the invention has photosensitivity, can be used as a photosensitizer in the photosensitive resin composition, can improve the adhesive force of the photosensitive resin composition on various metal surfaces, and has the characteristic of low migration; the method can be widely applied to the photo-curing fields of dry films, paints, coatings, printing ink, forming materials and the like.

The present invention is a method for producing a blue cured film, comprising a step of forming a coating film of a blue photosensitive composition on a substrate, the blue photosensitive composition containing a colorant, an alkali-soluble resin, a photopolymerizable compound, and a photoinitiator, the photoinitiator comprises an oxime-based photoinitiator and a sensitizing agent which is different from the oxime-based photoinitiator and has a sensitizing effect at 400-420 nm; and curing the coating film by exposing the coating film to light using an LED light source having an emission peak wavelength in the range of 360 nm to 380 nm and in the range of 400 nm to 420 nm.

The invention relates to a backside illuminated image sensor preparation method and a backside illuminated image sensor, and relates to the technical field of integrated circuits, the backside illuminated image sensor preparation method comprises the steps that a substrate comprising a first top surface is provided, and the first top surface of the substrate comprises first isolation lamination layers and first photosensitive lamination layers which are alternately arranged along a first direction parallel to the first top surface of the substrate; the first photosensitive laminated layer comprises at least three sub photosensitive layers which are alternately laminated along a second direction away from the substrate; in the process of forming a plurality of second photosensitive laminations right above the plurality of first photosensitive laminations, forming a plurality of second isolation laminations right above the plurality of first isolation laminations; the second photosensitive lamination layer comprises at least two sub photosensitive layers which are alternately laminated along a second direction; and forming a plurality of grating laminations right above the plurality of second isolation laminations, and then forming optical filters between the adjacent grating laminations along the first direction. According to the embodiment, the electron concentration of the photosensitive area is increased, and the photosensitive performance of the BSI image sensor is improved.

The invention discloses a photosensitive polyimide composition, a pattern manufacturing method, a structure, a part and equipment, and the composition comprises the following raw materials in parts by weight: 100 parts of block polymer which can be dissolved in an alkaline aqueous solution; 5-30 parts of a thermal crosslinking agent which is selected from a crosslinking agent containing an epoxy group and a crosslinking agent containing CH2OR; 0.5 to 5 parts of a photoacid generator; and 0.5 to 10 parts of a silane coupling agent. The photosensitive polyimide composition provided by the invention has excellent alkali solubility, can copy fine patterns, has low warping stress after low-temperature curing, and has high chemical stability and cohesiveness.

The invention provides anthracene methylthiosalicylic acid for a photosensitive resin composition, and relates to the field of photopolymerization. The invention also comprises a photosensitive resin composition containing the anthracene methylthio-salicylic acid, a photosensitive dry film containing the anthracene methylthio-salicylic acid, and applications of the photosensitive resin composition and the photosensitive dry film. The anthracene methyl thiosalicylic acid has photosensitivity and can be used as a photosensitizer in the photosensitive resin composition; the migration characteristic is low; the photosensitive resin composition has good solubility in conventional monomers, and the degree of freedom of formula design of the photosensitive resin composition is greatly improved; the developing agent also has very good solubility in alkali liquor, so that developing garbage can be greatly reduced, and the product yield is improved; the adhesive force of the photosensitive resin composition on various metal surfaces can be improved; the method can be widely applied to the photo-curing fields of dry films, paints, coatings, printing ink, forming materials and the like.

To provide a polyhydroxyamide compound with which it is possible to obtain a new negative photosensitive resin composition that does not include a resin component which may be targeted by PFAS regulations.SOLUTION: Provided is a polyhydroxyamide compound including: a structural unit represented by formula (1); and a structural unit wherein a fluorene group in the structure of (1) is replaced with a sulfonyl group.SELECTED DRAWING: None

A photosensitive surface treating agent containing a compound represented by the following Formula (M1). In Formula (M1), R1 is a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms, Y1 is a linear or branched alkylene group having 1 to 4 carbon atoms or a single bond, and the terminal carbon atom of the alkyl group for R1 may be bonded to a carbon atom constituting the alkylene group for Y1, and R1 and Y1 may form a ring. R2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, R3 and R4 are each independently an alkyl group having 1 to 3 carbon atoms, n0 is an integer of 0 or more, and X is a halogen atom or an alkoxy group.

The invention relates to the field of polyimide materials, in particular to a positive photosensitive polyimide photoresist, a polyimide film and application of the positive photosensitive polyimide photoresist and the polyimide film. The positive photosensitive polyimide photoresist with excellent performance can be prepared by taking novel water-soluble polyamic acid ester with good dielectric property, low water absorption, heat resistance and the like as film-forming resin and combining the film-forming resin with the quinonediazide compound photosensitive component, the silane coupling agent and the organic solvent; the main film-forming component polyamic acid ester is a corresponding water-soluble polyimide precursor synthesized by using a series of simple and easily available polymeric monomers, and the realization of the water solubility is not limited to specific groups such as hydroxyl, carboxyl and the like in molecules. The photoresist has the advantages of high light sensitivity, high resolution, good thermal stability and chemical resistance, good heat and humidity resistance, good adhesion to various substrates and the like, an alkaline aqueous solution can be used as a developing solution, the loss of a film in a non-exposure area in the developing process is low due to low water absorption of the alkaline aqueous solution, and the developing time is short.

Provided is a photosensitive resin composition containing (X) an inorganic filler that is solid particles having a true density of 1,500 kg / m3 or less. Also provided is a photosensitive resin film formed using the photosensitive resin composition. Also provided are a multilayer printed wiring board comprising an interlayer insulating layer formed using the photosensitive resin composition or the photosensitive resin film, and a method for producing the multilayer printed wiring board. Also provided is a semiconductor package including the multilayer printed wiring board and a semiconductor element.

The invention relates to the technical field of biomedicine, discloses mutant photo-induced ion channel ChR-2 protein, and further discloses a nucleic acid construct, an expression vector, a cell, related application and a computer model. The light-sensitive channel ChR2 protein mutant obtained by the invention has stronger light current, and the light-sensitive capability of the light-sensitive channel ChR2 protein mutant is at least improved by 100 times; besides, the invention also obtains a nucleotide sequence for coding the light-sensitive channel ChR2 protein mutant, constructs a recombinant expression vector, and obtains the light-sensitive channel ChR2 protein with higher expression quantity and stronger light sensitivity, and the light-sensitive channel ChR2 protein is very suitable for expression in cells of mammals (especially human); according to the invention, the rhodopsin in different channels is systematically studied by modifying the position G224 in the helix 6 of seven transmembrane helix motifs, which proves that the mutation of the position G224 in the helix 6 in WT ChR2 accelerates the photosensitivity of the channels, and the considered position is homologous in the helix 6 of the rhodopsin in different channels.

The invention relates to a back-illuminated image sensor and a preparation method thereof, and relates to the technical field of integrated circuits, in which a plurality of photodiode structures are distributed at intervals along a first direction parallel to a back surface and penetrate through a P-type epitaxial layer along a second direction close to a substrate; the bottom photosensitive part comprises a first horizontal part extending along a first direction and a first longitudinal protruding part extending to the back surface of the substrate; the middle photosensitive part comprises a second horizontal part extending in the first direction and a second longitudinal protruding part extending to the top face of the first horizontal part. The second longitudinal protruding part is located on the side, away from the first longitudinal protruding part, of the first horizontal part in the first direction. The top photosensitive part comprises a third horizontal part extending in the first direction and a third longitudinal protruding part extending to the top face of the second horizontal part. The electron concentration of a photosensitive area can be increased at least, and the photosensitive performance and the integration density of the BSI image sensor are improved.

The main object of the present invention is to provide an organic EL display that has excellent light emission characteristics to enable low voltage driving and has light emitting elements with high reliability, thereby serving to realize a desired current density. Provided is a display device including a substrate, a first electrode, a second electrode, a pixel separation layer, and an organic layer containing a light emitting layer, wherein the pixel separation layer contains a colorant (D-DL), has an optical density of 0.5 to 3.0 in the visible light wavelength range per μm of the thickness of the pixel separation layer, and has a plurality of pixel parts in a plan view. The detection intensity of the sulfur ion (S−), the detection intensity of the chlorine ion (Cl−), the detection intensity of the bromine ion (Br−), and the sum of the detection intensity of the chlorine ion (Cl−) and the detection intensity of the bromine ion (Br−), all measured by time-of-flight secondary ion mass spectrometry at a position 3 nm deep in each pixel part from the surface of the first electrode, the surface being in contact with the organic layer containing a light emitting layer, satisfy relationships represented by specific general formulas.

The invention relates to a backside illuminated image sensor preparation method and a backside illuminated image sensor, and relates to the technical field of integrated circuits, and the method comprises the steps: providing a substrate which comprises a plurality of trench isolation parts distributed at intervals in a first direction; self-aligning the plurality of trench isolation parts to form a first type bottom semiconductor layer comprising a plurality of first target patterns which are distributed at intervals along the first direction, the first target patterns comprising a first type second semiconductor part, a first semiconductor part and a second semiconductor part which are sequentially distributed along the first direction; forming a second type photosensitive lamination layer on the surface, deviating from the substrate, of the bottom semiconductor layer; self-aligning the first semiconductor part, and forming a plurality of first type semiconductor columns which penetrate through the photosensitive lamination layer along a second direction and extend to the first semiconductor part; and forming a first type top semiconductor layer by adopting the same preparation process as the bottom semiconductor layer. The electron concentration of a photosensitive area can be increased at least, and the photosensitive performance of the BSI image sensor is improved.

A method and device for implementing high-dynamic range imaging, and an image processing system are provided. The device includes: an image sensor, a pixel array in the image sensor including a plurality of pixel units; and a column processing unit, including a gain control unit and an analog-to-digital conversion unit; where each pixel unit includes two photoelectric conversion units with different photosensitivity; and the gain control unit is configured to determine a brightness range of an image based on a signal voltage output by each pixel unit, and select the photoelectric conversion unit for signal conversion in each pixel unit, a charge-to-voltage conversion gain of each pixel unit and a voltage gain of the column processing unit based on the brightness range. With the method, device and system, the signal voltage allows to be read out only once, thereby shortening row readout time and increasing a frame rate.

The invention relates to the technical field of photosensitive dielectric materials, in particular to a photosensitive composition, a preparation method of a pattern, a cured product and an electronic component. The photosensitive composition includes a component (a) graft polymer selected from a compound represented by the following structural formula: # imgabs0 # wherein Ar1 is selected from a tetravalent organic group, Ar2 is selected from a divalent organic group, and R'is selected from any one of an alkyl group, an alkoxy group, a cycloalkyl group and an aryl group; m + n = 5-200, n / (m + n) = 0.05-1, k = 2-10, and x = 0.5-10; a component (b) of a photoacid generator; (c) a thermal cross-linking agent which is a cross-linking agent containing CH2OR '', wherein R'' is selected from hydrogen or a monovalent organic group; and (d) a basic compound. The photosensitive resin composition has the advantages of excellent sensitivity, excellent resolution ratio, capability of copying fine patterns, low warping stress after low-temperature curing, and high chemical stability and cohesiveness.

The invention belongs to the technical field of photoinitiators, and particularly relates to a ketoxime ester photoinitiator as well as application and a photosensitive combination thereof. Compared with the prior art, the novel photoinitiator has the advantages that by introducing a sulfone phenyl specific structure to a ketoxime ester group and the like, excellent photosensitivity can be shown in the optical wavelength range of 280-400 nanometers, and compared with OXE-01 and OXE-02 commonly used in the market, the novel photoinitiator can show better photoinitiation efficiency under an ultraviolet visible (UV-Vi s) LED light source.

The invention provides a wafer film tearing process based on ultraviolet viscosity control. The wafer film tearing process based on ultraviolet viscosity control comprises the steps that a, a wafer is selected and prepared, the surface of the wafer is coated with a layer of photosensitive viscous material suitable for ultraviolet irradiation, and the photosensitive material is a thin film layer with high photosensitivity and good photoreaction control capacity; and the ultraviolet light source is accurately adjusted to ensure that the intensity of the ultraviolet light is uniformly distributed in a relatively large range. According to the wafer film tearing process based on ultraviolet viscosity control, by optimizing ultraviolet irradiation conditions, the problem of limited ultraviolet penetrating power is solved, it is ensured that ultraviolet can effectively penetrate through a thick film layer, and uniform photosensitive material reaction is achieved. By means of the improvement, it can be ensured that the film layer separation effect in the film tearing process is more uniform, the film tearing effect difference caused by uneven ultraviolet light penetration in a traditional method is avoided, and the consistency and reliability of the technology are improved.

The invention discloses a two-dimensional organic / inorganic heterojunction photoelectric nerve component and a preparation method thereof, and belongs to the technical field of photoelectric devices. According to the invention, a TMDC material MoS2 is transferred to a substrate through a mechanical stripping method, then a film electrode is plated on a MoS2 layer through an electron beam lithography method, and finally a single-layer Me-PTCDI crystal is epitaxially grown on the MoS2 layer through a back-off method to form the heterojunction. Due to the formation of the MoS2 / Me-PTCDI heterojunction, the photoelectric nerve device has excellent photosensitivity and light adaptability, and can simulate reactions of retinal essential photosensitive ganglion cells under different illumination; the device can make current change under the stimulation of light pulses so as to simulate the generation and action of human melatonin, and can realize visual adaptation in bright and dark environments under the regulation and control of grid voltage, and the device has a wide application prospect in the field of automatic driving due to the corresponding characteristics.

The invention belongs to the technical field of photocuring, and particularly relates to a nitrocarbazole (ketone) oxime ester compound and a photoinitiator containing the compound, and the compound has a structure as shown in a formula (I). The compound has high curing hardness and excellent photosensitive activity, can be used as a photoinitiator, and is especially suitable for a UV-light source. # imgabs0 #

The invention relates to a backside illuminated image sensor preparation method and a backside illuminated image sensor, and relates to the technical field of integrated circuits, and the method comprises the steps: providing a substrate comprising a first top surface; forming a first semiconductor layer on the first top surface of the substrate, wherein the first semiconductor layer internally comprises a plurality of first photosensitive parts which are distributed at intervals in the first direction, and the top surfaces of the first photosensitive parts are not lower than the top surface of the first semiconductor layer; forming a second semiconductor layer covering the first semiconductor layer, wherein the second semiconductor layer internally comprises a plurality of second photosensitive parts which are distributed at intervals along the first direction, penetrate through the second semiconductor layer along a second direction close to the substrate and extend to the top surfaces of the plurality of first photosensitive parts; and forming a third semiconductor layer covering the second semiconductor layer, wherein the third semiconductor layer internally comprises a plurality of third photosensitive parts which are distributed at intervals along the first direction, penetrate through the second semiconductor layer along the second direction and extend into the plurality of second photosensitive parts. The electron concentration of a photosensitive area can be increased at least, and the photosensitive performance of the BSI image sensor is improved.

The embodiment of the invention provides a display panel and a display device. The display panel comprises a pixel driving circuit, the pixel driving circuit comprises a silicon semiconductor transistor, an oxide transistor and a storage capacitor which are electrically connected, and the display panel comprises a first active layer, a first gate layer and a second active layer which are sequentially arranged in a stacked mode. A grid electrode of the oxide transistor, a grid electrode of the silicon semiconductor transistor and a first pole plate of the storage capacitor are located on a first grid electrode layer, an active pattern of the oxide transistor and a second pole plate of the storage capacitor are located on a second active layer, and the first grid electrode layer can be adopted to form a bottom grid of the oxide transistor. The active pattern of the transistor in the second active layer is prevented from being influenced by light, so that the photosensitivity and the electrical property of the transistor are improved, the performance of the display panel is improved, and the electrical property improvement effect of the oxide transistor is good due to the fact that the distance between the first gate layer and the second active layer is small.

The invention provides LDI solder resist ink and a preparation method thereof, and belongs to the technical field of solder resist ink, raw materials of the LDI solder resist ink comprise the following components: carboxylic acid modified carboxyl-polycaprolactone acrylate epoxy resin, an inorganic filler, a photoinitiator and an auxiliary agent, the carboxylic acid modified carboxyl-polycaprolactone acrylate epoxy resin is prepared by the following steps: adding carboxyl-polycaprolactone acrylate and acrylic acid into an epoxy resin modified solution, uniformly dispersing by a certain preparation method, grinding and the like. According to the LDI solder resist ink obtained by the invention, the photosensitivity can be improved, and the problems of long exposure time and low curing speed caused by mismatching of an LDI exposure machine and ink are solved.

The invention provides a compound containing a ureido structure, a negative photosensitive resin composition and a preparation method and application of the negative photosensitive resin composition. The compound containing the ureido structure can be used as a photo-crosslinking agent; when being added into the photosensitive resin composition, the compound can improve the resolution ratio and mechanical property of a photosensitive resin composition cured film and the adhesiveness with a base material, and can effectively inhibit the oxidation discoloration of a copper base material.

An array substrate and a display panel are provided. The array substrate includes a substrate, an active layer, a first insulating layer, and a first opening. The active layer is disposed on a side of the substrate and includes a first active portion and a second active portion. The first insulating layer is disposed on a side of the active layer away from the substrate and covers the active layer. The first opening is formed on the first active portion. The first opening exposes the first insulating layer. An integration of a pixel driving element and a photosensitive element on the array substrate is realized, and a photosensitive performance of the photosensitive element is improved.