342 results about "Conduction type" patented technology

The embodiment of the invention provides a solar cell and a preparation method thereof, and a photovoltaic module. In the embodiment of the invention, a first internal expansion layer with the same conduction type as a first doping layer and / or a second internal expansion layer with the same conduction type as a second doping layer are / is arranged in an interval region used for forming an isolation region on the back surface of a silicon substrate; and the first internal expansion layer and the second internal expansion layer are electrically connected, so that the field passivation effect can be realized, the recombination of minority carriers in the isolation region can be effectively reduced, reverse conduction can be realized when the battery piece is shielded, the breakdown can be avoided, and the hot spot prevention effect can be effectively realized.

The invention discloses a response time conduction type testing device and method for a radio frequency channel protection device. The response time conduction type testing device comprises a transient field intensity generating device, an isolator, a directional coupler, a first attenuator, a second attenuator, a third attenuator, a first power meter, a second power meter, a high-speed oscilloscope, a vector network analyzer and a radio frequency channel protection device to be tested. According to the method, the response performance of the protection device under the influence of the transient strong field can be comprehensively, safely and accurately evaluated, the amplitude limiting function of the protection device can still be effectively exerted under the action of the transient strong field with an extremely narrow rising edge, and then subsequent devices, circuits and equipment are prevented from being damaged.

The invention relates to the technical field of semiconductors, in particular to a semiconductor structure and a preparation method thereof. The preparation method comprises the steps that a substrate is provided, the substrate comprises an SGT device region and a BCD device region which are transversely arranged, and the conduction types of the SGT device region and the BCD device region are different; forming a plurality of deep grooves in the SGT device region and the BCD device region; gate material filling is carried out on the multiple deep grooves, a first voltage-withstanding gate structure and at least one gate filling structure of the SGT device area and a second voltage-withstanding gate structure of the BCD device area are formed, and the first voltage-withstanding gate structure is close to the BCD device area; forming a shield gate structure based on the at least one gate filling structure; and forming a plurality of shallow trench isolation structures arranged at intervals in the BCD device region, wherein the shallow trench isolation structures are located between the first voltage-withstanding gate structure and the second voltage-withstanding gate structure. According to the invention, the process cost of SGT and BCD device integration can be reduced, and the device connection is simplified.

The invention provides a back contact battery, which comprises a semiconductor substrate, a first doping layer and a second doping layer, the main body part of the first doping layer and the main body part of the second doping layer are alternately distributed on one side of the backlight surface of the semiconductor substrate, and the conduction types of the first doping layer and the second doping layer are opposite; wherein a conductive connection structure is arranged between a part of the first doped layer and a part of the second doped layer, and wherein a single conductive connection structure comprises at least two side butt joint surfaces. The invention also provides a photovoltaic module. According to the back contact battery, the electric leakage channel contact area of the single conductive connection structure can be increased, and the effect of improving the hot spot effect is better.

According to the back contact battery and the preparation method thereof provided by the invention, doping elements penetrate through the third doping region between the first doping region and the second doping region through high-temperature diffusion to form an electric leakage channel, so that a new back surface structure of the back contact battery is provided. The third doped region is formed by mixing the doping elements of the first doped region and the doping elements of the second doped region, doping of the two impurities is completed at a high temperature in one step, so that an electric leakage channel of an overlapping region is not generated, and the overlapping region of the two doped semiconductor layers with opposite conduction types in the thickness direction of the semiconductor substrate is removed, so that the conductivity of the semiconductor substrate is improved. Therefore, electric leakage loss of the back contact battery in a forward voltage area can be controlled, current in the electric leakage channel is introduced to the grid line of the first electrode or the second electrode through the electric leakage channel or the connecting electrode, the hot spot risk of the back contact battery is reduced, the safety performance of the back contact battery is effectively improved, and the service life of the back contact battery is prolonged. And the back contact battery has relatively high working performance.

The invention provides a metal oxide semiconductor electrostatic protection device. The metal oxide semiconductor electrostatic protection device comprises a substrate; a well region of a first conductivity type disposed in the substrate; the source electrode region is formed in the well region of the first conduction type, the source electrode region comprises a first heavily doped region, and the first heavily doped region is of a second conduction type; a drain region; a gate structure; the body contact region comprises a third heavily doped region, and the third heavily doped region is of the first conduction type; wherein the drain region comprises a plurality of second heavily doped regions, the plurality of second heavily doped regions are of a second conduction type, and the plurality of second heavily doped regions are arranged at positions adjacent to the gate structure; the fourth heavily doped region is of the second conduction type, and the fourth heavily doped region is not arranged close to the gate structure; and a lightly doped drain region of the second conductivity type disposed below the plurality of second heavily doped regions and the fourth heavily doped regions. By changing the structure of the drain electrode heavily doped region, the ESD current distribution is improved, and the ESD endurance capability of the device is improved.

The invention relates to a back contact battery and a photovoltaic module. Comprising a substrate, the substrate is provided with a first surface and a second surface which are oppositely arranged, the first surface comprises a first area and a second area, the first area comprises an overlapping area, and the overlapping area is adjacent to the second area; the first doped semiconductor layer is arranged in the first region; the second doped semiconductor layer is arranged in the second region and the overlapping region, and the conduction type of the second doped semiconductor layer is opposite to that of the first doped semiconductor layer; the conductive layer is arranged on one side, deviating from the substrate, of the first doped semiconductor layer and the second doped semiconductor layer; the conductive layer is provided with a first isolation groove, the first isolation groove is arranged in the first region and comprises a first groove part and a second groove part along the arrangement direction of the first region and the second region, the first groove part penetrates to the surface of the side, away from the substrate, of the first doped semiconductor layer, and the second groove part is located in the overlapping region; and the second groove part penetrates to the surface of one side, deviating from the first doped semiconductor layer, of the second doped semiconductor layer.

The invention discloses a back contact battery and a photovoltaic module, and relates to the technical field of photovoltaics. The back contact cell comprises a silicon substrate which comprises a first surface and a second surface which are oppositely arranged, and a side surface which connects the first surface and the second surface; the first interface passivation layer, the first doped silicon layer, the intrinsic silicon layer, the second doped silicon layer and the transparent conducting layer are sequentially arranged on the side face in the direction away from the side face. On the side surface of the silicon substrate, the first doped silicon layer is in direct contact with the intrinsic silicon layer; wherein the conduction types of the first doped silicon layer and the second doped silicon layer are opposite. On the side face of the silicon substrate, the first doped silicon layer can be electrically connected with the second doped silicon layer with the conduction type opposite to that of the first doped silicon layer through the intrinsic silicon layer, so that a diode structure with low reverse breakdown voltage is formed on the side face of the silicon substrate, and the hot spot risk of the back contact battery is reduced.

The embodiment of the invention provides a back contact cell and a preparation method thereof, and a photovoltaic module, and relates to the field of solar cells, the back contact cell comprises a silicon substrate, the back surface of the silicon substrate comprises a first region, a second region and a spacer region, the first region comprises a first sub-region and a second sub-region, and the spacer region comprises a second sub-region and a third sub-region; the spacer region comprises a first spacer sub-region adjacent to the first region and a second spacer sub-region adjacent to the second region; the first carrier collection layer has a first conduction type, is arranged on the back surface of the silicon substrate and is positioned in the first region and the first spacer region; the amorphous semiconductor layer is arranged on the first carrier collection layer and is positioned in the second sub-region and the first spacer sub-region; the second carrier collection layer has an opposite second conduction type, is arranged on the back surface of the silicon substrate, is positioned in the second region, the spacer region and the second sub-region, and is positioned on the amorphous semiconductor layer in the second sub-region and the first spacer region; and the first electrode is arranged in the first sub-region and is positioned on one side, far away from the silicon substrate, of the first carrier collection layer. The back contact battery has excellent electrical properties.

The invention provides a solar cell and a preparation method thereof. The preparation method of the solar cell comprises the following steps: providing a silicon substrate with first doping atoms of a first conductive type; a first tunneling oxide layer and an intrinsic polycrystalline silicon layer are formed on the back face of a silicon substrate, second doping atoms with the conduction type opposite to that of the first doping atoms are diffused into the silicon substrate at a first temperature, and a first doping layer of a second conduction type is formed on the side, close to the back face, of the silicon substrate, converting the intrinsic polycrystalline silicon layer into a first doped polycrystalline silicon layer of a second conductive type; removing the first doped polycrystalline silicon layer; and growing an intrinsic amorphous silicon layer on one side, opposite to the silicon substrate, of the first tunneling oxide layer, and diffusing second doping atoms into the silicon substrate at a second temperature, the first temperature being higher than the second temperature. According to the preparation method of the solar cell, the passivation performance and the contact performance of the solar cell can be considered at the same time, and the cell conversion efficiency is improved.

The invention provides a back contact battery, which comprises a semiconductor substrate, a first doping layer and a second doping layer, the main body part of the first doping layer and the main body part of the second doping layer are alternately distributed on one side of the backlight surface of the semiconductor substrate, and the conduction types of the first doping layer and the second doping layer are opposite; a spacer region is arranged between the main body part of the first doping layer and the main body part of the second doping layer; wherein the first doping layer further comprises an extension part of the first doping layer, the extension part of the first doping layer at least extends across part of the spacer region and extends below the second doping layer, and the extension part of the first doping layer is electrically connected with the second doping layer. The invention also provides a photovoltaic module. According to the back contact battery, the relative position of the second electrode and the laminated structure does not need to be considered, and the alignment problem does not need to be considered.

The invention discloses a solar cell and a photovoltaic module, which are used for realizing light trapping, electric leakage prevention, minority carrier lifetime prolonging and cell efficiency improving. Comprising a silicon substrate, a first doped semiconductor layer, a second doped semiconductor layer and a passivation layer, the silicon substrate has a first surface, a second surface and a side surface. The first surface has a pyramid structure, and the side surface comprises a first region, a second region and a third region which are sequentially distributed; the first region is adjacent to the first surface and the third region is adjacent to the second surface. The second region is recessed towards the silicon substrate by a distance of 2-10 [mu] m relative to the first region; the first area is provided with a first pyramid structure, the second area is provided with a second pyramid structure, and the third area is provided with a third pyramid structure and / or a first texture structure; the first doped semiconductor layer and the second doped semiconductor layer with opposite conduction types are respectively arranged on the first surface and the second surface; the passivation layer is arranged on the first surface, the second surface and the side surface.

The invention provides a trench type field effect transistor and a manufacturing method thereof, and the trench type field effect transistor is provided with a gate trench structure and a source trench structure at one side, deviating from a substrate, of a second conductive type drift region, and the source trench structure is introduced below a source metal layer. A high electric field peak value exists at the bottoms of the gate trench structure and the source trench structure at the same time, and an avalanche breakdown current generated at the bottom of the source trench structure directly flows to the first conduction type ohmic contact region along the source trench, so that the avalanche breakdown current can be reduced without changing the channel density and the voltage endurance capability of the field effect transistor. And the current proportion of the first conduction type body region below the second conduction type source region is reduced, so that the avalanche energy of the field effect transistor is improved.

The invention discloses a semiconductor test structure and a test method thereof. According to the invention, the P-type well regions and the N-type well regions which are alternately distributed are formed in the active region, and the S-shaped active region metal silicide strips serving as S-shaped test structures are formed on the surface of the active region; the two ends of the snakelike active region metal silicide strip are located above the well regions of different conduction types respectively, so that the snakelike active region metal silicide strip covers the surfaces of the PN junctions which are connected in series; through the snakelike test structure, the square resistance of the snakelike active region metal silicide strip can be accurately measured, whether electric leakage exists in the substrate or not is detected, and whether continuity of the snakelike active region metal silicide strip is abnormal or not and whether bridging exists or not is detected. Furthermore, a cross comb-shaped test structure used for measuring the breakdown voltage of the metal silicide layer of the active region to judge whether the isolation between the active regions meets the requirement is formed in the region where the snake-shaped test structure is located, so that the comprehensiveness of the test structure can be improved, and the test area of a test pattern in a chip is saved; the area utilization rate is effectively improved.

The embodiment of the invention discloses a semiconductor device, a manufacturing method, a power module, a power conversion circuit and a vehicle. The semiconductor device comprises a semiconductor body which comprises a first surface and a second surface which are oppositely arranged; the semiconductor body further comprises a well region, a first region and a channel layer, the first region is in contact with the channel layer, the first region is of a first conductive type and located on the first surface, and the well region is of a second conductive type and located on the side, away from the first surface, of the first region; a gate trench extending from the first surface into the semiconductor body; the channel layer is arranged to be of a first conduction type and is located between the well region and the side wall of the gate trench; a gate structure; a drain electrode; and a source electrode. According to the technical scheme, the depletion type semiconductor device is formed, negative voltage needs to be applied between the grid electrode and the source electrode to cut off the channel when the depletion type semiconductor device is in the conducting state and the cut-off state in the normal state, response can be made faster, current circulation can be controlled, the conducting loss is small, and the depletion type semiconductor device is more suitable for a high-frequency circuit and a switching circuit.

The invention discloses a semiconductor laser and a preparation method thereof, which can be used in the field of semiconductor device preparation, and the method comprises the steps: firstly, providing a first conductive type substrate; then, epitaxially growing a buffer layer of a first conduction type, a lower optical waveguide limiting layer, a quantum well active light-emitting layer, an upper optical waveguide limiting layer, a corrosion barrier layer, a current injection layer and an intrinsic ohmic contact layer on the substrate in sequence to obtain a multi-layer epitaxial layer; then, etching the multi-layer epitaxial layer to the corrosion barrier layer based on a preset pattern to form a ridge-shaped table which starts from the intrinsic ohmic contact layer and is deeply cut off to the corrosion barrier layer; and finally, performing particle doping in a region corresponding to the ridge-shaped table, and converting one sides, close to the corrosion barrier layer, of the intrinsic ohmic contact layer, the current injection layer, the corrosion barrier layer and the upper optical waveguide limiting layer into a second conduction type. Therefore, current limitation can be realized without performing multiple epitaxy like a traditional buried heterojunction, and the production cost and the process difficulty are greatly reduced.

The invention discloses a back contact battery, a manufacturing method thereof and a photovoltaic module, relates to the technical field of photovoltaic, and aims to improve the double-sided rate of the back contact battery and improve the conversion efficiency of the back contact battery. The back contact cell includes a semiconductor substrate, a doped semiconductor portion, and a spacer region. The doped semiconductor portion includes a first doped semiconductor portion and a second doped semiconductor portion. The first doped semiconductor part and the second doped semiconductor part are opposite in conduction type and are arranged on the first face of the semiconductor substrate at intervals in the first direction, and the first direction is parallel to the first face. The spacer region is a region, which is not correspondingly provided with the first doped semiconductor part and the second doped semiconductor part, in the first surface of the semiconductor substrate. Wherein the surfaces of the spacer regions are suede surfaces. In the first direction, the first doped semiconductor part and / or the second doped semiconductor part comprises a first doped region and a second doped region located on at least one side of the first doped region, and the doping forms of the first doped region and the second doped region are different.

The embodiment of the invention discloses a solar cell, a cell string, a cell module and a photovoltaic system. The solar cell comprises a substrate and a plurality of doping units arranged on a first surface of the substrate, wherein the plurality of doping units are sequentially arranged along a first direction; each doping unit in the plurality of doping units comprises a first doping layer and a second doping layer which are sequentially arranged along a first direction; the conduction types of the first doping layer and the second doping layer are different; in the thickness direction of the solar cell, the first doping layer comprises a first surface and a second surface which are oppositely arranged, and the first surface is farther away from the substrate than the second surface; the plurality of doping units comprise a first doping unit, and a first surface of a first doping layer in the first doping unit comprises a first part and a second part which are arranged along a first direction; the doping concentration of the first portion of the first doped layer is smaller than the doping concentration of the second portion of the first doped layer. According to the technical scheme, the power loss is effectively reduced, and the conversion efficiency of the battery is improved.

A gate structure is formed on a substrate at the junction of a well region and a drift region, the gate structure on the drift region is doped to form a first doped region and a second doped region which are adjacent to each other, the first doped region is doped with first type ions, and the second doped region is doped with second type ions; the conduction types of the second type ions and the first type ions are different, so that the first doped region and the second doped region form a reverse biased PN junction, an electric field caused by the interconnection structure can be balanced and dispersed in the direction from the drain electrode to the source electrode, and the high voltage of the interconnection structure can be effectively isolated; besides, the first doped region and the second doped region form a reverse-biased PN junction to disperse the high potential difference between the first doped region and the second doped region, so that the electric field intensity and the potential peak value on the surface of the device are effectively reduced, the segmented voltage division effect is beneficial to optimization of electric field distribution on the surface of the device, electric field concentration is reduced, and the performance of the device is improved. Therefore, the breakdown voltage of the semiconductor structure is improved.

The invention discloses a heat conduction type heat dissipation cable, and relates to the technical field of heat dissipation cables, the heat conduction type heat dissipation cable comprises a central capillary main pipe, a plurality of conductor strands are arranged on the outer side of the central capillary main pipe, a heat dissipation ring is arranged on the other side of each conductor strand, and a plurality of first heat dissipation holes are integrally formed in the heat dissipation ring; according to the invention, heat generated by the conductor strands is quickly transmitted through the heat conducting column, and the magnetic conductive sheet and the magnetocaloric material sheet are matched to generate magnetocaloric effect by utilizing magnetic field intensity fluctuation caused by current change: when the current is increased, heat is released to strengthen evaporation of a working medium, and when the current is reduced, heat is absorbed to directly cool, so that a self-adaptive heat adjusting mechanism is formed; heat can be quickly transferred through evaporation-condensation of low-boiling-point fluid through phase change circulation of the central capillary main pipe and the branch capillary pipes, and multi-path heat dissipation of the heat dissipation ring and the fins is combined, so that the heat dissipation efficiency under different current loads is improved, and the problem of local overheating is effectively avoided.

The invention belongs to the technical field of solid oxide batteries, and relates to an oxygen electrode material for a proton conduction type reversible solid oxide battery, the oxygen electrode material is a perovskite type oxide, and the chemical formula is PrzBa < 1-0.5 z > Sr < 1-0.5 z > CouFe < 2-u-x-y > M < x > Y < y > O < 5 + delta >, in the formula, M is any one of Nb, Ta, Zr, Hf, Mo and W, x is more than or equal to 0.05 and less than or equal to 0.2, y is more than or equal to 0.05 and less than or equal to 0.15, z is more than or equal to 0.98 and less than or equal to 1.02, u is more than or equal to 1.48 and less than or equal to 1.52, and delta represents a non-stoichiometric oxygen vacancy. The oxygen electrode material prepared by co-doping M and Y according to a specific ratio has a relatively low thermal expansion coefficient, and is well matched with an electrolyte BCZYYb; when being used in a proton conduction type solid oxide fuel cell and a proton conduction type solid oxide electrolytic tank, the proton conduction type solid oxide fuel cell / proton conduction type solid oxide electrolytic cell has good electrochemical performance; and the oxygen electrode material has excellent long-term working stability.

The invention discloses a heat conduction type fire extinguishing patch and a preparation method thereof, and relates to the technical field of fire-fighting equipment. The fire-extinguishing microcapsule comprises a modified adhesive and a microcapsule, the fire-extinguishing microcapsule is 50-80 parts, and the modified adhesive comprises 100 parts of an organic silicon resin adhesive, 10 parts of flame-retardant powder, 5 parts of a defoaming agent and 10 parts of heat-conducting powder. By adding the heat conduction powder, the overall heat conduction efficiency of the fire extinguishing patch is improved, the triggering time of the fire extinguishing patch is effectively shortened on the premise that triggering temperature setting is not sacrificed, the triggering sensitivity of the fire extinguishing microcapsules is further enhanced, the fire extinguishing requirement for rapid response in the initial stage is met, and the fire extinguishing effect is improved. The fire extinguishing patch is simple in structure, does not need an additional heating device, effectively guarantees the use flexibility and adaptability of the fire extinguishing patch, and is lower in production cost compared with a fire extinguishing patch adopting an additional heating device.

The invention discloses a solar cell and a photovoltaic module, which are used for realizing light trapping, electric leakage prevention, minority carrier lifetime prolonging and cell efficiency improving. Comprising a silicon substrate, a first doped semiconductor layer, a second doped semiconductor layer and a passivation layer, the silicon substrate has a first surface, a second surface and a side surface. The first surface has a pyramid structure, and the side surface comprises a first region and a second region which are sequentially distributed; the first region is adjacent to the first surface and the second region is adjacent to the first region. The second region is recessed into the silicon substrate by a first distance relative to the first region; the first doped semiconductor layer and the second doped semiconductor layer with opposite conduction types are respectively arranged on the first surface and the second surface; the passivation layer is arranged on the first surface, the second surface and the side surface; the second surface comprises groove regions and doped regions which are alternately arranged, and the groove regions are recessed towards the silicon substrate by a second distance relative to the doped regions; the second doped semiconductor layer is located in the doped region, and the passivation layer is located in the trench region and the doped region; wherein the first distance is greater than or equal to the second distance.

The invention provides an n-type Bi-Sb-Se-Te thermoelectric material and a preparation method and application thereof, and belongs to the technical field of thermoelectric materials. The chemical formula of the n-type thermoelectric material is BiySb2-ySe3-xTex, x is larger than or equal to 0.5 and smaller than or equal to 1.75, and y is larger than or equal to 0.5 and smaller than or equal to 1.75. According to the invention, by adjusting the temperature, deformation size, deformation times and the like of thermal deformation, a nano layer sheet with a preferred arrangement direction and a larger surface area is formed in the n-type thermoelectric material, and the nano layer sheet with the preferred arrangement direction and the larger surface area can be formed in the n-type thermoelectric material on the premise of not changing the conduction type of BiySb2-ySe3-xTex, so that the nano layer sheet is textured, and the conductivity of BiySb2-ySe3-xTex is improved. The crystal grain preferred orientation is effectively improved, the electric transport performance is improved, the thermoelectric performance is improved, the conversion efficiency of the thermoelectric device is remarkably improved, and the method has important significance for subsequent design and development of the thermoelectric device.

The invention discloses a back contact solar cell, a photovoltaic module and a photovoltaic system, and relates to the technical field of solar cells. The back contact solar cell comprises a first region, a second region and an isolation region which are arranged on the backlight surface of a silicon substrate, the first region and the second region are covered with a first doping layer and a second doping layer respectively, and the first doping layer and the silicon substrate are opposite in conduction type; the edges of the first region and the isolation region are provided with extension parts extending to the upper part of the isolation region; a first suede structure is arranged on the first side wall, close to the first area, of the isolation area, and a second suede structure is arranged at the bottom of the isolation area; the first suede structure is formed by protruding the first side wall of the isolation area in the first direction, the second suede structure is formed by protruding the bottom of the isolation area in the second direction, and the first direction is perpendicular to the second direction. According to the invention, the leakage current between the first doped layer and the second doped layer can be reduced, and the recombination of current carriers on the surface of the isolation region is avoided, thereby reducing the parallel resistance.

The invention relates to a back contact battery, a manufacturing method thereof and a photovoltaic module. The back contact battery comprises a substrate which comprises a first surface and a second surface which are oppositely arranged, and a side surface which is connected with the first surface and the second surface; the first surface is provided with first regions and second regions which are alternately arranged, and the conduction types of the first regions and the second regions are different; the first region comprises a tunneling layer, a first semiconductor doping layer and a first transparent conducting layer which are sequentially arranged away from the substrate; the second region comprises an amorphous silicon layer, a second semiconductor doping layer and a second transparent conducting layer which are sequentially arranged in the direction away from the substrate; the side surface comprises a first passivation layer and a second passivation layer which are sequentially arranged away from the substrate, and the first passivation layer is connected with the first semiconductor doping layer and makes contact with the first semiconductor doping layer. The carrier recombination of the side surface is effectively improved, the passivation effect of the side surface is improved, the open-circuit voltage, the filling factor and the photoelectric conversion efficiency of the back contact battery are further improved, and the power generation performance of the back contact battery is improved.

The invention relates to the technical field of semiconductor devices, and discloses a wide bandgap power semiconductor device and a preparation method thereof. The method comprises: providing a substrate layer of a first conductivity type; forming a first doped region which is deep into the substrate layer and comprises a plurality of doped layers which are sequentially nested from outside to inside, wherein the doping concentrations of the plurality of doped layers are sequentially increased from outside to inside; forming a second doped region in the doped layer on the innermost side of the first doped region; forming an isolation layer on the first surface; forming a control electrode on the isolation layer; forming a first electrode on the first surface; a second electrode is formed on the second surface of the substrate layer. According to the invention, the first doped region which is located between the substrate layer and the second doped region and has the doping concentration gradually increased from outside to inside is formed through a mode of multiple times of ion implantation, so that transverse electric field constraint is constructed, transverse depletion of a channel region and a short channel effect under the condition of large voltage are inhibited, the channel width is reduced, and the performance of the device is improved. And the device performance and reliability are improved.

The invention discloses a pavement adaptive to a magnetic resonance type dynamic wireless charging system and a construction process of the pavement, and belongs to the field of road engineering and road infrastructures. The pavement comprises a lower surface layer, a middle surface layer and an upper surface layer, a charging unit is arranged in the middle of the upper surface layer, and wear-resistant asphalt concrete is arranged on two sides; the charging unit is divided into three layers, the lower layer is nanometer metal heat conduction type asphalt concrete, the middle layer is an adhesive layer embedded with a transmitting coil, and the upper layer is ferrite magnetic enhanced asphalt concrete. Through the optimized material and structural design, the mechanical compatibility of the transmitting coil and the road surface is improved, the heat dissipation performance is also remarkably improved, the problem of system overheating is avoided, the magnetic loss is greatly reduced by optimizing the magnetic field distribution, the energy transmission efficiency of the magnetic resonance type wireless charging system is remarkably improved, and the energy loss is reduced; and meanwhile, the service life of the wireless charging system is prolonged, the maintenance cost is reduced, and an efficient and reliable solution is provided for dynamic wireless charging of the electric vehicle.

The invention relates to the technical field of nano electronic devices, in particular to a two-dimensional material multi-port reconfigurable device structure and a preparation method thereof. The static grid electrodes are used for regulating and controlling the conduction type of a nanometer two-dimensional material channel, the nanometer electrodes are directly connected with an active region, a plurality of nanometer electrodes are directly connected with a central two-dimensional material, and meanwhile side grid electrodes are not connected with the central two-dimensional material. By applying different gate voltages, the carrier type, density and transport mechanism of the central two-dimensional material can be regulated and controlled, and free switching among an n-type state, a p-type state or an undoped state is realized. The device structure provided by the invention is provided with a plurality of nano-sized side gate electrodes and an electrode connected with a channel, and by utilizing the electric tunability of a two-dimensional material, the advantages of relatively strong gate control capability, relatively high device integration degree, reconfigurable function and the like can be obtained.

The invention relates to a back-illuminated image sensor and a preparation method thereof. The back-illuminated image sensor comprises a substrate, and photodiodes and target isolation laminations which are located on a first surface of the substrate, are alternately arranged along a first direction parallel to the first surface and extend towards the substrate, the substrate internally comprises a plurality of trench isolation structures which extend into the substrate through the first surface and are arranged at intervals in the first direction; the trench isolation structures are located right below the target isolation laminations which are arranged in a one-to-one manner; the photodiode comprises a first photosensitive area and a second photosensitive area which are stacked in the second direction away from the substrate. The second photosensitive area is formed in the first photosensitive area through solid phase diffusion; the first photosensitive area comprises at least three photosensitive layers made of different materials; the conductive type of the target isolation lamination layer is opposite to that of the first photosensitive area, and the side wall of the target isolation lamination layer is zigzag. The number of Quantum <-> can be increased through the Photo diodes of different layer structures.