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3 results about "Floating body effect" patented technology
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The floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator (SOI) technology on the history of its biasing and the carrier recombination processes. The transistor's body forms a capacitor against the insulated substrate. The charge accumulates on this capacitor and may cause adverse effects, for example, opening of parasitic transistors in the structure and causing off-state leakages, resulting in higher current consumption and in case of DRAM in loss of information from the memory cells. It also causes the history effect, the dependence of the threshold voltage of the transistor on its previous states. In analog devices, the floating body effect is known as the kink effect.
A double-gate MOSFET transistor and method of forming the same
The application provides a double-gate MOSFET transistor and a forming method thereof. The forming method comprises the following steps: providing a first substrate and a second substrate, the second substrate is provided with two protruding structures which are arranged at intervals; performing an N-type ion implantation process on the protruding structures; performing a planarization treatment on the second insulating layer, and performing a bonding treatment on the first substrate and the second substrate, the first insulating layer is arranged towards the second insulating layer; forming a source electrode and a drain electrode in the side of the second substrate which is away from the first substrate, and forming a floating gate on the second substrate between the source electrode and the drain electrode, the source electrode and the drain electrode are arranged in overlap with a protruding structure respectively. The application optimizes the electric field intensity and the hole concentration of the drain electrode through the N-type doped protruding structure. The N-type ion implantation process makes the thermal conductivity of the protruding structure higher than that of the first insulating layer and the second insulating layer, and effectively improves the floating body effect and the self-heating effect of the double-gate MOSFET transistor.
Owner:SHANGHAI HUALI INTEGRATED CIRCUIT CORP
One-transistor reservoir computer using floating body effect
A reservoir computing method and related system. The method comprises providing a pulse wave representation of a reservoir input and a MOSFET-based compute node of a reservoir computing system. A body terminal of the MOSFET is configured to apply a bias signal to the body region. The MOSFET is operable in floating mode in the absence of the bias signal. The MOSFET displays a history-dependent threshold voltage when driven by input pulses in floating mode. The method further includes removing the bias signal from the body terminal; applying input pulses to a gate terminal of the MOSFET, thus causing history-dependent variations in the threshold voltage; and acquiring an output sequence related to the compute node while the MOSFET threshold voltage is varying, by repeatedly applying readout pulses to the gate terminal of the MOSFET and simultaneously detecting a current through a channel region of the MOSFET.
Owner:INTERUNIVERSITAIR MICRO ELECTRONICS CENT (IMEC VZW) +1