708 results about "Stoichiometry" patented technology

The present invention relates to a method for gas-solid contacting in a bubbling fluidized bed reactor by:(a) introducing into a reactor with bed length to bed diameter ratio below about 5.0, a primary gas consisting essentially of reactant(s) of the reaction to be carried out in the bed of solid particles through a primary gas distributor located at the reactor bottom at a superficial gas velocity Up, which is very close or equivalent to the minimum fluidization velocity Umf, required for achieving the incipient fluidization of the solid particles in the bed to obtain an emulsion phase consisting essentially of the solid particles and the primary gas with little or no formation of gas bubbles to achieve incipient fluidization or liquid-like behavior of fluidizable solid particles;(b) forming gas bubbles in the incipiently fluidized bed by introducing through a secondary gas distributor located immediately above the primary gas distributor a secondary gas, selected from one of the reactants which is used in excess of that required for the reaction stoichiometry, steam, an inert or a mixture of two or more thereof at a superficial gas velocity, Us, which is related to the superficial velocity of the primary gas such that a ratio of the superficial velocity of the secondary gas to the superficial velocity of the primary gas Us / Up, is in the range from about 0.5 to about 10.0, preferably from about 1 to about 5.

Transistor gate structures, encapsulation structures, and fabrication techniques are provided, in which sidewalls of patterned gate structures are conditioned by nitriding the sidewalls of the gate structure, and a silicon nitride encapsulation layer is formed to protect the conditioned sidewalls during manufacturing processing. The conditioning and encapsulation avoid oxidation of gate stack layers, particularly metal gate layers, and also facilitate repairing or restoring stoichiometry of metal and other gate layers that may be damaged or altered during gate patterning.

An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) has a tunneling barrier layer of substantially uniform and homogeneous Al2O3 stoichiometry. The barrier layer is formed by depositing Al on a CoFe layer or a CoFe—NiFe bilayer having an oxygen surfactant layer formed thereon, then oxidizing the Al by radical oxidation. The underlying surfactant layer contributes oxygen to the bottom surface of the Al, forming an initial amorphous Al2O3 layer. This layer produces small, uniform grains in the remaining Al layer, which promotes a uniform oxidation of the Al between its upper and lower surfaces by the subsequent radical oxidation. A final annealing process to set a pinned layer magnetization enhances the homogeneous oxidation of the layer.